扫描探针显微镜原理及其应用-精工

扫描探针显微镜原理及其应用扫描探针显微镜的历史General term of a type microscope, which performs surface formobservation in minute domain by detecting the physics propertiesbetween probe and sample .STM (1981 invention 1987 utilization) AFM (1986 invention 1990 utilization)DFM （Dynamic Force Mode ）FFM (Friction Force Microscope)MFM (Magnetic Force Microscope)VE-AFM (Viscoelasticity AFM)KFM (Surface potential)SNOMProbeSample surfacephysical interaction10 mm 10μm10 nm10 nm 10 mmX,Y resolution/m10μmZ r e s o l u t i o n /mSEM Optical Microscope10 pmSPMTEM扫描探针显微镜与其他显微镜在分辨能力上的比较0.2nm800μm 15μmReference ：NIKKEI MICRDEVICES 86.11High Resolution in 3D imageAtomic Image （HOPG）STM（～2nm□）Magnet-Optical DiskMFM（10μm□）Lung cancer cell among culture solution DFM（100μm□）AFM Lithography by oxidization with elec. fieldVector Scan（1μｍ□）~ In Air ，High Vacuum ，Liquid ，Heat ，Cool ，Magnetic Field扫描探针显微镜的优势Observation・Analysis ⇒ProcessingTopography & Physical propertyMeasurement in various environmentBeforeAfter扫描探针显微镜原理标准配置功能♦Contact AFM（接触式原子力模式）♦DFM (动态力模式，包括非接触式和间歇接触式原子力模式)♦Phase Mode（相位模式）♦FFM (摩擦力模式)♦MFM (磁力模式)♦Vector Scan（矢量扫描，纳米刻蚀）♦Force vs Distance Curve (力曲线测量模式)Contact AFM（Atomic Force Microscope）DFM（Dynamic Force Mode）PZTDFM／PhasePZT Cantilever PZTSPIMFM（Magnetic Force Microscope）CantileverPZTPZTSPISurface Processing by SPM (Vector Scan)BeforeprocessingCantileverDirection of scanningElectrolyticoxidationAfterprocessingSPI扫描探针显微镜原理物理特性测量♦VE-AFM/VE-DFM (微区粘弹性测量模式)♦LM-FFM (切向调制摩擦力测量模式)♦Surface Potential Microscope KFM(表面电位势测量模式KFM)♦Piezo Response Mode（压电响应模式）SPIVE-AFM/DFM （微粘弹性模式）【测量原理】在AFM 模式下，使扫描器边产生Z 方向微小振动，边加一定周期的力在样品上，将这时的悬臂的弯曲振幅影象化，以测量粘弹性的表面分布。

【特征】可同时测量物质表面的形貌像及粘弹性分布。

形貌像VE-AFM 像OUTPUTDeflection Signal of CantileverINPUTVibration Signal to PZT(1～10kHz)OUTPUTDeflection Signal of Sample (Large)(Small)PZTCantilever（Large）（Small）聚苯乙烯上的Si 油膜分散样品的测量数据。

在表面形貌像上，可以知道附着的薄油膜部分比底材的聚苯乙烯软。

（测量范围10×10μm ）SPI扭曲形变信号扭曲振动信号Topography（5μm □）FFMLM-FFM样品:聚苯乙烯上的薄膜LM-FFM （横向振动摩擦力模式）【测量原理】在AFM 模式操作下，使样品产生横方向振动，将Cantilever 的扭曲振动振幅影象化，以测量摩擦力的表面分布。

【特征】可同时测量物质表面的形貌像及摩擦力分布。

从形状无法判断的材质差异或混合物分布状态是有效。

【应用领域】润滑剂・有机・高分子・塑胶・橡胶Lateral ModulationEdge EffectFriction Force Microscope Lateral Modulation FFMTwisting Distortion Twisting AmplitudeSmall Friction Large Friction Small Friction Large FrictionSPIVrsin ωr t(forcantilever vibration)V AC sin ωt (for AC electric field)2ωingredient （Ａ2ω）ωingredient (A ω) ωr ingredient （Ａω）ｒ）Photo DetectorPZT scannerPre Amp.Lock-in amplifier Potential feedback(Voff is controlled to A ω=0) => surface potential Vs=-Voff be detected.ZZ servo(Z is controlled to ⊿A ω= const. ) => topography (Z) is detected.VoffVs : Surface potentialFSample SignalMagnificationPotential control I gainIt is set in the KFM measurement.KFM （表面电位显微镜）【可得到什么信息？】样品微小区域的表面电位分布【测量原理】利用作用于探针－样品间的静电力来测量样品的表面电位【特征】测量电位：±10V 电位分辨率约1mV 可测量厚度在数100μm 以下的样品【应用领域】金属，半导体，陶瓷等SPI形貌像压电响应像蝴蝶曲线基于正的DC 电场的余留的极化基于负的DC 电场的余留的极化样品提供：八户工业大学增田教授偏压:-9V ～+10V位移:约6.5ÅPiezo Response Mode （压电响应法）PZT 强电介体薄膜的记录与放录扫描探针显微镜原理电特性测量♦STM（扫描隧道测量模式）♦AFM with Current measurement Mode (AFM同时电流测量模式)♦AFM-CITS (AFM电流隧道谱)Scanning Tunneling MicroscopeMetal ProbeX,Y-ScanComputerMonitor Bias VoltageElectronCloudPZT ScannerTunnelCurrentElectricConductive SampleZ-Servo Tunnel Current AmplifierSPI【可得到什么信息？】样品微小区域的导电性分布任意点的I / V 曲线特性【测量原理】导电性Cantilever 和样品间加任意的电压可以进行导电性分布测量或局部I / V 曲线测量【特征】电流分辨率：约60fA RMS 用电场氧化的样品表面加工【应用领域】半导体，陶瓷，绝缘膜导电性高分子等I/V 放大器Conducting AFM（電流同時測定）扫描探针显微镜原理液体及电化学测量♦Contact AFM in Liquid（液体中接触式AFM测量）♦DFM in Liquid（液体中DFM测量）♦Electro Chemical AFM/STM（电化学AFM/STM）♦Hermetic Type Circumstance Control Cell电化学和液体中成像体系封闭的液体样品池（带蠕动泵）10ml开放的液体样品池1ml液体样品池样品可移动范围：2mm工作方式：探针固定部分与样品池在扫描中相对独立运动。

SPA-400加液体样品槽封闭式液体样品槽+蠕动泵Comparison of A FM and DFMAFMContact Cycric-Contact Non-Contact Interaction Large　（～10-9N)Medium　（～10-10N)Small　（～10-11N)Feature ●Symple●3D Atomic image●Pysical property atcontact state●Influence adhesive andcharged sample●All-round topography imaging●Small influence adhesive andcharged sample●Advantage of Large up anddown sample●Pysical property atintermittent contact state●Advantage of softmaterials●Setup of very small force●Pysical property atIntermittent non-contactstateApplication ●Frection　●VE-AFM　●Adhesion　●Current　●Phase　●VE-DFM　●MFM　●KFMDFMModeApplications of A FM and DFMLiquid crystal 11CB STMDVD DFMAl-grain DFMChromosome DFM in liquidCilia of Rat DFMＨＯＰＧAFMApplications of Multi-function SPM TopographyRa・Particle & grain analysis・Pitch & height measurementVE・Friction･Adhesion･Hardness（Nano-indentation）MechanicalElectricLeak Current ･Polarization ・Dielectric constant ・Surface PotentialMagneticMagnetic Force ・Magnetic Domain & FluxFluorescence ・Spectrum ･Optical Transition ･Optical Record OpticalLithography ・Manipulation･oxidization ･Scratch Processing应用半导体研究精密表面粗糙度评价Measurement of Wafer’s Measurement of Wafer’s Surface RoughnessCentre （Ra:0.61A）Edge （Ra:0.63A）应用于记录材料形貌及磁畴研究CD -CD -R and DVD Pit morphology of Optical disk DFM mode （10μm□）Groove morphology of CD-R DFM mode （5μm□）StorageMagnetic HeadMemory PatternMaterialHard DiskMagnetic DotsFeNiGarnett FerriteApplications of MFM・Conductivity of ITO Film・TFT Potential etc・Conductivity of ITO Film ・TFT Potential etc LCDLCD SemiconductorSemiconductor ・Leak Current of Gate Oxide Layer ・Dopant Profile ・P-N Junction ・Failure Analysis etc・Leak Current of Gate Oxide Layer ・Dopant Profile ・P-N Junction ・Failure Analysis etc CeramicsCeramics ・Leak Current of Domain Boundary・Ferro-electric Material Polarization ・Dielectric Constant Mapping etc・Leak Current of Domain Boundary ・Ferro-electric Material Polarization ・Dielectric Constant Mapping etc Data StorageData Storage ・Phase Change Layeretc・Phase Change Layer etc 电特性测量研究PolymerPolymer ・Conductive Rubber・Conductive Film ・I/V Measurement etc・Conductive Rubber ・Conductive Film ・I/V Measurement etc ・・・不同材料I/V曲线测量不同材料I/V曲线测量Conductor InsulatorSemiconductor应用AFM－CITS微区原位漏电流测量Leak Current Measurement of the Insulator for MRAMTopography[pA]Insulation FailureRapid Growth of Leak Current over 1.5VMeasurement area ：１００nmCnductivityI/V CurveSample ：Dr. Kakuta of Tohoku Univ.导电AFM对FeRAM失效分析The Result of Conduction AFMBad CellUpper EleFerro-electric layerLower ElePoly-Si plug Good CellBad Cell对于Pt上的厚度150Å的PZT薄膜进行电流同时测量。