TA8211参数

TOSHIBA Bipolar Linear Integrated Circuit Silicon MonolithicTA8211AHDual Audio Power AmplifierThe TA8211AH is dual audio power amplifier for consumerapplications.This IC provides an output power of 6 watts per channel (at V CC = 20 V, f = 1 kHz, THD = 10%, R L = 8 Ω).It is suitable for power amplifier of TV and home stereo.Features· High output power: P out = 6 W/channel (Typ.)(V CC = 20 V, R L = 8 Ω, f = 1 kHz, THD = 10%)· Low noise: V no = 0.14 mVrms (Typ.)(V CC = 28 V, R L = 8 Ω, G V = 34dB, R g = 10 kΩ,BW = 20 Hz~20 kHz)· Very few external parts· Built in thermal shut down protector circuit· Operating supply voltage range: V CC (opr) = 10~30 V (Ta = 25°C)Block DiagramWeight: 4.04 g (typ.)V CCApplication InformationVoltage gainThe closed loop voltage gain is determined by R 1, R 2.~ - 34(dB)(a)Amplifier with gain > 34dBWhen R 3 = 400 W G V ~ - 40 (dB) is given.(b)Amplifier with gain < 34dBWhen R 4 = 220 W G V ~ - 30 (dB) is given.CautionsThis IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak. Please set the IC keeping the distance from CRT.WW+W = 400 400k 20og20l (dB)R R R og20G 221V +=l (dB)//R R //R R R og 20G 32321V +=l (dB)R R R R R og20G 42421V +++=lFigure 2Figure 3Standard PCB(Bottom view)Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitSupply voltageV CC 30 V Output current (Peak/ch) I O (peak) 2 A Power dissipation P D (Note) 25WOperating temperature T opr -20~75 °C Storage temperatureT stg-55~150 °CNote: Derated above Ta = 25°C in the proportion of 200 mW/°C.Electrical Characteristics(unless otherwise specified, V CC = 20 V, R L = 600 9, R g = 600 9, f = 1 kHz, Ta = 25°C)Characteristics SymbolTestCircuitTest ConditionMinTyp.MaxUnit Quiescent current I CCQ ¾V in = 0¾ 75 130mA P out (1) ¾ THD = 10% 5.06.0¾Output powerP out (2) ¾ THD = 1% ¾ 4.5 ¾WTotal harmonic distortion THD ¾ P out = 2 W¾ 0.1 0.6 % Closed loop voltage gain G V ¾ V out = 0.775 Vrms (0dBm) 32.5 34.0 35.5dBOpen loop voltage gain G VO ¾¾ 60 ¾ dB Input resistance R IN ¾ ¾¾ 30 ¾ k WRipple rejection ratio R.R. ¾ Rg = 0, f ripple = 100 HzV ripple = 0.775 Vrms (0dBm) -45-57¾ dBOutput noise voltageV no¾Rg = 10 k W ,BW = 20 Hz~20 kHz¾ 0.14 0.3 mVrmsTyp. DC Voltage of Each Terminal (V CC = 20 V, Ta = 25°C)Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12 DC voltage (V)2.12.25GND2.252.16.89.82.25V CC GND 2.259.8Test CircuitV CC INPUT1INPUT20.030.1 0.3 1 10 303 0 8 16 24 32 40T o t a l h a r m o n i c d i s t o r t i o n T H D (%)T o t a l h a r m o n i c d i s t o r t i o n T H D (%)O u t p u t D C v o l t a g e V O U T (D C ) (V )Supply voltage V CC (V)I CCQ , V OUT (DC) – V CCQ u i e s c e n t c u r r e n t I C C Q (m A )Frequency f (Hz)G V– fV o l t a g e g a i n G V (d B )Output power P out (W)T o t a l h a r m o n i c d i s t o r t i o n T H D (%)Output power P out (W)THD – P outFrequency f (Hz) THD – fFrequency f (Hz)C.T. – fC r o s s t a l k C .T . (d B )--------301003001k 3k 10k 30k 100k0.3 1 3 10 100 3003030 -----100 300 1k --3k 10k 30k 100k --2040 60 80-402040 60 8030-----100 300 1k --3k 10k 30k 100k ---30----1003001k --3k 10k 30k---O u t p u t n o i s e v o l t a g e V n o (m V r m s )O u t p u t n o i s e v o l t a g e V n o (m V r m s )Signal source resistance Rg (W ) C.T. – RgC r o s s t a l k C .T . (d B )Frequency f (Hz)R.R. – fR i p p l e r e j e c t i o n r a t i o R .R . (d B )Signal source resistance Rg (W )R.R. – RgR i p p l e r e j e c t i o n r a t i o R .R . (d B )Signal source resistance Rg (W )V no – RgAmbient temperature Ta (°C)V no – TaAmbient temperature Ta (°C)I CCQ – TaQ u i e s c e n t c u r r e n t I C C Q (m A )301003001k 3k 10k 30k 100k25 50 100 17575125 150 04 8 12 16 201014 18 22 26 30-2040 60 808 1624 32 40A l l o w a b l e p o w e r d i s s i p a t i o n P D (W )P o w e r d i s s i p a t i o n P D (W )Ambient temperature Ta (ºC)THD – TaT o t a l h a r m o n i c d i s t o r a t i o n T H D (%)Supply voltage V CC (V)P out – V CCO u t p u t p o w e r P o u t (W )Supply voltage V CC (V)P D MAX – V CCM a x i m u m p o w e r d i s s i p a t i o n P D M A X (W )Output power P out (W)P D – P outAmbient temperature Ta (°C)P D – TaPackage DimensionsWeight: 4.04 g (typ.)· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures.The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. · The products described in this document are subject to the foreign exchange and foreign trade laws.· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EBFRESTRICTIONS ON PRODUCT USE。