All-Optical Wavelength Conversion and

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《JournalofLightwaveTechnology》期刊第2页50条数据

《JournalofLightwaveTechnology》期刊第2页50条数据

《JournalofLightwaveTechnology》期刊第2页50条数据《Journal of Lightwave Technology》期刊第2页50条数据https:///doc/8514081923.html,academic-journal-foreign_journal-lightwave-technology_info_11_1/1.《Dynamic Provisioning of Self-Organized Consumer Grid Services Over Integrated OBS/WSON Networks》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417921.html2.《Experimental Demonstration of Highly Resilient Wavelength-Switched Optical Networks With a Multivendor Interoperable GMPLS Control Plane》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417922.html3.《Overlapped-Subcarrier Multiplexing for WDM Passive Optical Networks: Experimental Verification and Mathematical Analysis》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417923.html4.《A Highly Efficient Computational Model for FDTD Simulations of Ultrafast Electromagnetic Interactions With Semiconductor Media With CarrierHeating/Cooling Dynamics》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417924.html5.《Demonstration of Wireless Backhauling Over Long-Reach PONs》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417925.html6.《All Single-Mode Fiber Mach–Zehnder Interferometer Based on Two Peanut-Shape Structures》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020417926.html7.《Cross-Diabolo Nanoantenna for Localizing and Enhancing Magnetic Field With Arbitrary Polarization》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418029.html8.《A 25 Gbit/s Transmitter Optical Sub-Assembly Package Employing Cost-Effective TO-CAN Materials and Processes》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418030.html9.《Reconfigurable All-Optical OTDM-to-WDM ConversionUsing a Multiwavelength Ultrashort Pulse Source Based on Raman Compression》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418031.html10.《A General Characterizing Method for Ring Resonators Based on Low Coherence Measurement》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418032.html11.《Network-Coding-Based Energy Management for Next-Generation Passive Optical Networks》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418033.html12.《Green Packet Optical Transport Networks (P-OTNs) Based on Photonic PBB-TE Switches and Minimized EEE Overhead》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418034.html13.《PMD Vector Estimation Through Time-Resolved Waveform Analysis Basedon Ultrafast xy-Field Sampling》原文链接:https:///doc/8514081923.html,/academic-technology_thesis/020418035.html14.《End-to-End Multicore Multimode Fiber Optic Link Operating up to 120 Gb/s》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418036.html15.《Modal Birefringence Analysis of Strained Buried-Core Waveguides》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418037.html16.《Investigation on the Phase Noise and EVM of Digitally Modulated Millimeter Wave Signal in WDM Optical Heterodyning System》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418038.html17.《Mode Classification and Calculation in All-Solid Photonic Bandgap Fibers》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418039.html18.《Synergetic Effects of Humidity and Temperature on PMMA Based Fiber Bragg Gratings》原文链接:https:///doc/8514081923.html,/academic-technology_thesis/020418040.html19.《Broadband Chromium-Doped Fiber Amplifiers for Next-Generation Optical Communication Systems》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418041.html20.《Resonant Fiber Optic Gyroscope Using an Air-Core Fiber》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418091.html21.《Auto Bias Control Technique Based on Asymmetric Bias Dithering for Optical QPSK Modulation》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418092.html22.《Broadband Mach–Zehnder Switch for Photonic Networks on Chip》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418093.html23.《Ferroelectric Liquid Crystal Mixture Integrated Into Optical Waveguides》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418094.html24.《Fabrication of High Glass Transition Temperature Graded-Index Plastic Optical Fiber: Part 2—Fiber Fabrication and Characterizations》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418095.html25.《Demonstration of a Remotely Dual-Pumped Long-Reach PON for Flexible Deployment》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418096.html26.《Performance Analysis for Optical OFDM Transmission in Short-Range IM/DD Systems》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418097.html27.《Simultaneous Measurement of Strain and Temperature by Using a Micro-T apered Fiber Grating》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418145.html28.《Extending the Sensing Range of Brillouin Optical Time-Domain Analysis Combining Frequency-Division Multiplexing and In-Line EDFAs》原文链journal-foreign_journal-lightwave-technology_thesis/020418146.html29.《Experimental Research of an All-Polarization-Maintaining Optical Fiber Vector Hydrophone》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418147.html30.《Photonic Crystal Fiber Interferometer for Dew Detection》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418148.html31.《Impact of Loss Variations on Double-Ended Distributed Temperature Sensors Based on Raman Anti-Stokes Signal Only》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418149.html32.《Brillouin Spectrum in LEAF and Simultaneous Temperature and Strain Measurement》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418150.html33.《Reduction in the Number of Averages Required in BOTDA Sensors Using Wavelet Denoising Techniques》原文链journal-foreign_journal-lightwave-technology_thesis/020418151.html34.《Raman-Assisted Brillouin Distributed Temperature Sensor Over 100 km Featuring 2 m Resolution and 1.2 C Uncertainty》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418152.html35.《Lab-on-a-Fiber Device for Trace Vapor TNT Explosive Detection: Comprehensive Performance Evaluation》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418153.html36.《Hybrid TDM/WDM-Based Fiber-Optic Sensor Network for Perimeter Intrusion Detection》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418154.html37.《The Use of a Fiber Comb Filter Fabricated by a CO Laser Irradiation to Improve the Resolution of a Ratiometric Wavelength Measurement System》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418155.html38.《Index Guiding Photonic Liquid Crystal Fibers forPractical Applications》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418156.html39.《Etched-Core Fiber Bragg Grating Sensors Integrated With Microfluidic Channels》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418157.html40.《Superstructure Fiber Gratings Via Single Step Femtosecond Laser Inscription》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418158.html41.《Inspection T echnique for Cleaved Optical Fiber Ends Based on Fabry–Perot Interferometer》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418159.html42.《Temperature Fiber Laser Sensor Based on a Hybrid Cavity and a Random Mirror》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418160.html43.《High-Sensitivity Coherent Optical Time DomainReflectometry Employing Frequency-Division Multiplexing》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418161.html44.《Refractive-Index Sensing With Inline Core-Cladding Intermodal Interferometer Based on Silicon Nitride Nano-Coated Photonic Crystal Fiber》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418162.html45.《Miniaturized Long-Period Fiber Grating Assisted Surface Plasmon Resonance Sensor》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418163.html46.《Polarization-Dependent In-Line Mach–Zehnder Interferometer for Discrimination of Temperature and Ambient Index Sensitivities》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418164.html47.《Long-Range Coherent OFDR With Light Source Phase Noise Compensation》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418165.html48.《Polarization Mode Coupling Involved in a Capillary Optical Fiber Sensor: Modeling and Experimental Validation》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418166.html49.《Metrological Evaluation of Optical Fiber Grating-Based Sensors: An Approach Towards the Standardization》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418167.html50.《Optical Intensity-Type Refractometer for Remote Measurements Via Fiber-Optic Cables》原文链接:https:///doc/8514081923.html,/academic-journal-foreign_journal-lightwave-technology_thesis/020418168.html。

FBG-FP阵列的高空间分辨率高精度分布式传感研究

FBG-FP阵列的高空间分辨率高精度分布式传感研究

摘要光纤传感技术以其独特的优势,成为目前智能结构健康监测技术中研究较为广泛的技术。

针对大型结构、复合材料内部裂纹、金属结构腐蚀等主要损伤类型,由于其具有隐蔽性强、结构失效机理复杂、结构破坏程度难以判断等特点,需进行超高空间分辨率、复用容量大、精度高的传感检测。

本文采用间距极小的超短弱反射的光纤光栅(Fiber Bragg Grating,FBG)构筑的光纤光栅法布里珀罗(Fiber Bragg Grating Fabry-Perot,FBG-FP)阵列搭建传感网络,基于光频域反射技术搭建传感光路,通过对解调原理、解调算法和实验验证等相关问题的研究,实现一种具有超高空间分辨率、超大容量、高精度的全分布式光纤传感新方法与新技术。

主要研究内容如下:(1)FBG-FP阵列的传感机理与复用容量研究。

以FBG的耦合模式方程为基础推导FBG-FP的光谱数学表达式,并分析其温度和应变的传感机理。

数值模拟多重反射效应和光谱阴影效应对FBG-FP传感阵列的复用极限的制约,证明降低反射率可抑制上述两种效应,并进一步提出采用光栅间隔不小于栅长和中心波长随机分布的传感阵列可分别抑制多径反射效应和光谱阴影效应,其中波长随机分布对传感没有坏的影响。

(2)FBG-FP阵列的分布式传感解调系统的研究。

提出基于光频域反射(Optical Frequency-domain Reflectometry,OFDR)技术的FBG-FP阵列的分布式解调系统。

一方面研究传感单元高空间分辨率的定位方法,通过对可调谐光源的非线性调谐效应进行补偿,在50m的传感距离内实现82μm内的超高空间分辨率;通过计算等效光频域调谐速率和可调谐光源的时间波长转换轴,提高系统的定位稳定度和波长解调精度。

另一方面研究传感单元的波长解调方法,推导FBG-FP光谱重构的数学表达式,提出FBG-FP阵列的分布式传感解调算法。

(3)裂纹尖端检测。

温度实验测试系统解调性能,实现8557个长度为400μm、间隔为440μm、反射率约为-42dB的FBG构成的超短弱反射的FBG-FP阵列传感,传感解调空间分辨率达到840μm,温度解调精度小于0.65℃。

化工过程与装备

化工过程与装备
浙江大学
A08
厌氧反应器气液两相流场的数值模拟
王卫京,詹世平,陈理
大连大学
A09
颗粒温度计算方法对FCC颗粒湍动床数值模拟的影响
卢竟蔓,蓝兴英,徐春明,高金森
中国石油大学(北京)
A10
行星式搅拌釜内三维流场的数值模拟
杨伶,彭炯,王晓瑾
北京理工大学
A11
MCM-41分子筛吸附脱除苯中噻吩
解园园,廖俊杰,王文博,鲍卫仁,陈艳珍,常丽萍
于升学
燕山大学应用化学系
D28
太原理工大学
B2
微波技术在煤炭加工中的应用与进展
杨景超,许丽华,张文娟
中国矿业大学
B3
渣油流化脱碳改质过程结焦接触剂的再生反应
田刚,王刚,霍金丽,徐春明,高金森
中国石油大学(北京)
B4
复合金属氧化物吸附剂同时脱除煤气中的单质汞和硫化氢
吕学勇,王建成,郭颖,常丽萍,韩丽娜
太原理工大学
B5
乳液体系天然气水合物的分解动力学
樊君
西北大学化工学院
材料科学与技术
D01
离子液体对聚合物增塑作用的研究进展
陶长元,彭敏,牟天明,刘仁龙,杜军,范兴,刘作华
重庆大学
D02
多巴胺复合膜研究进展
车芳琳,代岩,张玲玲,贺高红
大连理工大学
D03
环保型防腐颜料在涂料中的应用研究进展
李俊虎,常春,陈群,侯翠红,张保林
郑州大学
D04
有机膜的生物污染控制及其改性研究进展
太原理工大学
D23
纳米葡萄糖酸白土的制备及表征
朱云清
广西大学化学化工学院
D24
辣椒碱-膨润土/壳聚糖缓释制剂的制备及释药机制研究

偏振延时干涉仪型CSRZ-Duobinary全光码型转换器

偏振延时干涉仪型CSRZ-Duobinary全光码型转换器

2012年第2期中文核心期刊偏振延时干涉仪型CSRZ-Duobinary 全光码型转换器All optical CSRZ to duobinary converter based on polarization delay interferometerZHANG Xiao-yuan,YU Jin-long,WANG Wen-rui,YANG En-ze(Optical Fiber Communication Laboratory,School ofElectronic and Information Engineering,Tianjin University,Tianjin 300072,China)Abstrac t:An all-optical format conveter based on polarization delay interferometer (PDI)is investigated.Ac-croding to the configuration design of the PDI,operation principle for CSRZ to Duoinary signal is analyzed,and numerically simulation proves that the presented scheme is feasible.The influence of differential group delay on the interference results is also investigated,it shows that inaccurate differential group delay will lead to degration of extinction ratio and receiver sensitivity of the output Duoinary signals.Key words :optical fiber communication;format conversion;polarization delay interferometer (PDI);differ-ential group delay (DGD)张晓媛,于晋龙,王文睿,杨恩泽(天津大学电子信息工程学院光纤通信实验室,天津300072)摘要:提出了利用偏振延时干涉仪(PD I )实现C SR Z 到Duobi nar y 转换的全光码型转换器。

一种改进的光载波抑制产生光毫米波的方法

一种改进的光载波抑制产生光毫米波的方法

一种改进的光载波抑制产生光毫米波的方法陈罗湘;黄诚;陈林【摘要】为了延长光毫米波的传输距离,提出了一种改进的光载波抑制产生光毫米波的方法.在中心站采用马赫-曾德尔调制器将射频信号调制到光载波上产生光载波抑制调制光信号,再将产生光信号的2个边带分离,将2.5Gbit/s数据信号调制到其中1个边带上,再与未调信号耦合后产生光毫米波并通过光纤传送至基站.在基站中通过光电转换器产生电毫米波.从理论上分析了这种光毫米波的传输特性并通过实验验证了光毫米波在光纤中可以传输40km.仿真和实验结果表明,这种方式产生的光毫米波具有很好的抗色散能力,延长了传输距离.【期刊名称】《激光技术》【年(卷),期】2008(032)006【总页数】4页(P659-662)【关键词】光通信;光纤无线通信系统;光毫米波产生;光载波抑制【作者】陈罗湘;黄诚;陈林【作者单位】湘潭职业技术学院,信息工程系,湘潭,411102;湖南大学,计算机与通信学院,长沙,410082;湖南大学,计算机与通信学院,长沙,410082;湖南大学,计算机与通信学院,长沙,410082【正文语种】中文【中图分类】TN929.11引言光纤无线通信系统(radio over fiber,ROF)将成为未来超宽带无线接入的最理想的通信方式,人们已对ROF研究了多年[1-13]。

光毫米波产生方法是降低ROF系统代价的最关键的技术之一。

迄今为止,已提出的光毫米波的产生的方法有3种:直接强度调制、外部强度调制和远程外差技术[1-13]。

基于外部调制器的光毫米波产生方案具有较高的可靠性,可降低代价,因而最有可能成为ROF系统中产生光毫米波的首选技术[5]。

采用外部调制器产生光毫米波的方法有3种:单边带调制(single sideband,SSB),双边带调制(double sideband,DSB)以及光载波抑制(optical carrier supression,OCS)。

光电传感器(中英文对照版)

光电传感器(中英文对照版)

光电传感器(中英文对照版)Photoelectric sensorKey word: photoelectric effect photoelectric element photoelectric sensor classification sensor application characteristics .Abstract: in the rapid development of science and technology in the modern society, mankind has into the rapidly changing information era, people in daily life, the production process, rely mainly on the detection of information technology by acquiring, screening and transmission, to achieve the brake control, automatic adjustment, at present our country has put detection techniques listed in one of the priority to the development of science andtechnology. Because of microelectronics technology, photoelectric semiconductor technology, optical fiber technology and grating technical development makes the application of the photoelectric sensor is growing. The sensor has simple structure, non-contact, high reliability, high precision, measurable parameters and quick response and more simple structure, form etc, and flexible inautomatic detection technology, it has been widely applied in photoelectric effect as the theoretical basis, the device by photoelectric material composition. Text:First, theoretical foundation - photoelectric effectPhotoelectric effect generally have the photoelectric effect, optical effect, light born volts effect.The light shines in photoelectric material, according to the electronic absorption material surface energy, if absorbed energy large enough electronic electronic will overcome bound from material surface and enter the outside space, which changes photoelectron materials, this kind of phenomenon become the conductivity of the photoelectric effectAccording to Einstein's photoelectron effect, photon is moving particles, each photon energy for hv (v for light frequency, h for Planck's constant, h = 6.63 * 10-34 J/HZ), thus different frequency of photons have different energy, light, the higher the frequency, the photon energy is bigger. Assuming all the energyphotons to photons, electronic energy will increase, increased energy part of the fetter, positive ions used to overcome another part of converted into electronic energy. According to the law of conservation of energy:Type, m for electronic quality, v for electronic escaping the velocity, A microelectronics the work done.From the type that will make the optoelectronic cathode surface escape the necessary conditions are h > A. Due to the different materials have different escaping, so reactive to each kind of cathode materials, incident light has a certain frequency is restricted, when the frequency of incident light under thisA -h m 212νν=frequency limit, no matter how the light intensity, won't produce photoelectron launch, this frequency limit called "red limit". The corresponding wavelength for type, c for the speed of light, A reactive for escaping.When is the sun, its electronic energy, absorb the resistivity reduce conductive phenomenon called optical effects. It belongs to the photoelectric effect within. When light is, if in semiconductor electronic energy big with semiconductor of forbidden band width, the electronic energy from the valence band jump into the conduction band, form, and at the same time, the valence band electronic left the corresponding cavities. Electronics, cavitation remained in semiconductor, and participate in electric conductive outside formed under the current role.In addition to metal outer, most insulators and semiconductor have photoelectric effect, particularly remarkable, semiconductor optical effect according to the optoelectronics manufacturing incident light inherent frequency, when light resistance in light, its conductivity increases, resistance drops. The light intensity is strong, its value, if the smaller, its resistance to stop light back to the original value.Semiconductor produced by light illuminate the phenomenon is called light emf, born volts effect on the effect of photoelectric devices have made si-based ones, photoelectric diode, control thyristor and optical couplers, etc.Second, optoelectronic components and characteristicsAccording to the outside optoelectronics manufacturing optoelectronic devices have photoelectron, inflatable phototubes and photoelectric times once tube.1. Phototubes phototubes are various and typical products are vacuum phototubes and inflatable phototubes, light its appearance and structure as shown in figure 1 shows, made of cylindrical metal half cathodic K and is located in the wires cathodic axis of anode in A package of smoke into the vacuum, when incident light within glass shell in the cathode, illuminate A single photon took all of its energy transfer to the cathode materials A free electrons, so as to make the freedom electronic energy increase h. When electrons gain energy more than escape of cathode materials, it reactive A metal surface constraints can overcome escape, form electron emission. This kind of electronic called optoelectronics, optoelectronic escaping the metal surface for after initial kinetic energy Phototubes normal work, anode potential than the cathode, shown in figure2. In one shot more than "red light frequency is premise, escape from the optoelectronic cathode surface by positive potential attracted the anode in photoelectric tube forming space, called the current stream. Then if light intensity increases, the number of photons bombarded the cathode multiplied, unit of time to launch photoelectron number are also increasing, photo-current greatens. In figure 2 shows circuit, current and resistance is the voltage drop across the only a function of light intensity relations, so as to achieve a photoelectric conversion. When the LTT optoelectronic cathode K, electronic escape from the cathode surface, and was the photoelectric anode is an electric current, power plants absorb deoxidization device in the load resistance - I, thevoltagePhototubes photoelectric characteristics fig.03 shows, from the graph in flux knowable, not too big, photoelectric basic characteristics is a straight line.2. Photoelectric times had the sensitivity of vacuum tube due to low, so with people developed has magnified the photomultiplier tubes photo-current ability. Figure 4 is photomultiplier tube structure schematic drawing.图4光电倍增结构示意图From the graph can see photomultiplier tubes also have A cathode K and an anode A, and phototubes different is in its between anode and cathode set up several secondary emission electrodes, D1, D2 and D3... They called the first multiply electrode, the second multiply electrode,... Usually, double electrode for 10 ~ 15 levels. Photomultiplier tubes work between adjacent electrode, keeping a certain minimum, including the cathode potential potentials, each multiply electrode potential filtering increases, the anode potential supreme. When the incident light irradiation, cathodic K escape from the optoelectronic cathode multiplied by first accelerated, by high speed electrode D1 bombarded caused secondary electron emission, D1, an incident can generate multiple secondary electron photonics, D1 emit of secondary electron was D1, D2 asked electric field acceleration, converged on D2 and again produce secondary electron emission... So gradually produce secondary electron emission, make electronic increased rapidly, these electronic finally arrived at the anode, form a larger anode current. If a n level, multiply electrodes at all levels for sigma, the multiplication of rate is the multiplication of photomultiplier tubes can be considered sigma n rate, therefore, photomultiplier tube has high sensitivity. In the output current is less than 1mA circumstances, it in a very wide photoelectric properties within the scope of the linear relationship with good. Photomultiplier tubes this characteristic, make it more for light measurement.3 and photoconductive resistance photoconductive resistance within the working principle is based on the photoelectric effect. In semiconductor photosensitive material ends of mount electrode lead, it contains transparent window sealed in the tube and shell element photoconductive resistance. Photoconductiveresistance properties and parameters are:1) dark resistance photoconductive resistance at room temperature, total dark conditions stable resistance called dark resistance, at the current flow resistance is called dark current.2) light resistance photoconductive resistance at room temperature and certain lighting conditions stable resistance measured, right now is called light resistance of current flow resistance is called light current.4, volt-ampere characteristics of both ends photoconductive resistance added voltage and current flows through photoconductive resistance of the relationship between called volt-ampere characteristics shown, as shown in figure 5. From the graph, the approximate linear volt-ampere characteristics that use should be limited, but when the voltage ends photoconductive resistance, lest than shown dotted lines of power consumption area5, photoelectric characteristics photoconductive resistance between the poles, light when voltage fixed the relationship between with bright current photoelectric characteristics. Called Photoconductive resistance photoelectric characteristics is nonlinear, this is one of the major drawback of photoconductive resistance.6, spectral characteristics is not the same incident wavelength, the sensitivity of photoconductive resistance is different also. Incidence wavelength and photodetector the relationship between relative sensitivity called spectral characteristics. When used according to the wavelength range by metering, choose different material photoconductive resistance.7, response time by photoconductive resistance after photo-current need light, over a period of time (time) rise to reach its steady value. Similarly, in stop light photo-current also need, over a period of time (down time) to restore the its dark current, this is photoconductive resistance delay characteristics. Photoconductive resistance rise response time and falling response time about 10-1 ~ 10-3s, namely the frequency response is 10Hz ~ 1000Hz, visible photoconductive resistance cannot be used in demand quick response occasion, this is one of the main photoconductive resistance shortcomings.8 and temperature characteristic photoconductive resistance by temperature affects greatly, temperature rise, dark current increase, reduced sensitivity,which is another photoconductive resistance shortcomings.9, frequency characteristic frequency characteristics refers to an external voltage and incident light, strong must be photo-current I and incident light modulation frequency, the relationship between the f, photoelectric diode is the frequency characteristic of the photoelectric triode frequency characteristics, this is because of the photoelectric triode shot "yankees there capacitance and carrier base-combed need time's sake. By using the principle of the photoelectric efficiency of optoelectronics manufacturing frequency characteristics of the worst, this is due to capture charge carriers and release charge need a certain time's sake.Three, photoelectric sensorsPhotoelectric sensor is through the light intensity changes into electrical signal changes to achieve control, its basic structure, it first figure 6 by measuring the change of change of converting the light signal, and then using photoelectric element further will light signals into electrical signal by photoelectric sensor general. Illuminant, optical path and optoelectronics. Three components of photoelectric detection method has high precision, fast response, non-contact wait for an advantage, but measurable parameters of simple structure, sensors, form flexible, therefore, photoelectric sensor in the test and control is widely used.By photoelectric sensor generally is composed of three parts, they are divided into: transmitter and receiver and detection circuit shown, as shown in figure 7, transmitter aimed at the target launch beam, the launch of the beam from semiconductor illuminant, general light emitting diode (LED), laser diode and infrared emission diode. Beam uninterrupted launch, or change the pulse width. Receivers have photoelectric diode, photoelectric triode, composed si-based ones. In front of the receiver, equipped with optical components such as lens and aperture, etc. In its back is detection circuit, it can filter out effective signal and the application of the signal. In addition, the structural components in photoelectric switch and launch plate and optical fiber, triangle reflex plate is solid structure launch device. It consists of small triangle cone of reflective materials, can make a beam accurately reflected back from plate, with practical significance. It can be in with the scope of optical axis 0 to 25, make beams change launch Angle from a root almost after launch line, passes reflection or from the rotating polygon.some basic returns.图7Photoelectric sensor is a kind of depend on is analyte and optoelectronics and light source, to achieve the relationship between the measured purpose, so the light source photoelectric sensor plays a very important role, photoelectric sensor power if a constant source, power is very important for design, the stability of the stability of power directly affect the accuracy of measurement, commonly used illuminant have the following kinds:1, leds is a change electric energy into light energy semiconductor devices. It has small volume, low power consumption, long life, fast response, the advantages of high mechanical strength, and can match and integrated circuits. Therefore, widely used in computer, instruments and automatic control equipment.2, silk light bulb that is one of the most commonly used illuminant, it has rich infrared light. If chosen optoelectronics, constitutes of infrared sensor sensitive colour filter can be added to the visible tungsten lamps, but only filter with its infrared does illuminant, such, which can effectively prevent other light interference.3, compared with ordinary light laser laser with energy concentration, directional good, frequency pure, coherence as well as good, is very ideal light sources.The light source, optical path and photoelectric device composition photoelectric sensor used in photoelectric detection, still must be equipped with appropriate measurement circuit. The photoelectric effect to the measurement circuit of photoelectric element of widerange caused changes needed to convert the voltage or current. Different photoelectric element, the measurement circuit required is not identical also. Several semiconductor introduces below optoelectronic devices commonly used measurement circuit.Semiconductor photoconductive resistance can through large current, be in so usually, need not equipped with amplifier. In the output power of demand is bigger, can use figure 8 shows circuit.Figure 9 (a) with temperature compensation given the photosensitive diode bridge type measuring circuit. When the incident light intensity slow change, the reverse resistance photosensitive diode is the slow change, the change of the temperature will cause the bridge output voltage, must compensate. Drift Picture a photosensitive diode as the test components, another into Windows, in neighboring bridge, the change of the temperature in the arms of the influence of two photosensitive diode, therefore, can eliminate the same output with temperature bridge road drift.Light activated triode incident light in work under low illumination, or hope to get bigger output power, also can match with amplifying circuit, as shown in figure 9 shows.Because even in the glare photosensitive batteries, maximum output voltage also only 0.6 V, still cannot make the next level 1 transistor have larger current output, so must add positive bias, as shown in figure 9 (a) below. In order to reduce the transistor circuit impedance variations, base si-based ones to reduce as much as possible without light, when the reverse bias inherit in parallel a resistor si-based ones at both ends. Or like figure 9 (b) as shown by the positive ge diode produces pressure drop and test the voltage produced when exposed to light, make silicon tube e stack, b the voltage between actuators than 0.7 V, and conduction work. This kind of circumstance also can use silicon light batteries, as shown in figure 10 (c) below.Semiconductor photoelectric element of photoelectric circuit can also use integrated operational amplifier. Silicon photosensitive diode can be obtained by integrating op-amp larger output amplitude, as shown in figure 11 (a) below. When light is produced, the optical output voltage in order to guarantee photosensitive diode is reverse biased, in its positive to add a load voltage. Figure 11. (b) give the photocell transform circuit, because the photoelectric si-based ones short-circuit current and illumination of a linear relationship between, so will it up in the op-amp is, inverse-phase input, using these two potential difference between the characteristics of close to zero, can get better effect. In the picture shows conditions, the output voltageThe photoelectric element by flux the role of different made from the principle of optical measurement and control system is varied, press the photoelectric element (optical measurement and control system) output nature, namely, can be divided into second analog photoelectric sensor and pulse (switch) photoelectric sensor. Analog photoelectric sensors will be converted into continuous variation of the measure, it is measured optical with a single value relations betweenanalog photoelectric sensor. According to be measured (objects) method detection of target can be divided into transmission (absorption) type, diffuse type, shading type (beam resistance gears) three categories. So-called transmission style means the object to be tested in optical path in constant light source, the light energy through things, part of being measured by absorption, transmitted light onto photoelectric element, such as measured liquid, gas transparency and photoelectric BiSeJi etc; speed.gratifying The so-called diffuse style means the constant light by the light onto the analyte from the object to be tested, and projected onto surfaces reflect on after optoelectronic devices, such as photoelectric colorimetric thermometer and light gauge etc; The so-called shading style means the when illuminant issued by the flux of light analyte covered by a part Jing optoelectronics, make projection on the flux change, change the object to be tested and extent of the position with the light path, such as vibration measurement, the size measurement; And in pulse photoelectric sensor in the sensors, photoelectric element acceptable optical signal is intermittent change, therefore photoelectric element in switch work of the state, the current output it is usually only two steady state of the signal, the pulse form used for photoelectric counting and photoelectric speed measurement and so on. And infrared photoelectric sensor classification and working way generally have the following kinds:1, groove photoelectric sensor put a light emitter and a receiver in a slotface-to-face outfit are on opposite sides of the photoelectric groove. Lighter emits infrared light or visible light, and in unimpeded cases light receptors can receive light. But when tested objects from slot zhongtong obsolete, light occluded, photoelectric switches and action. Output a switch control signal, cut off or connect load current, thus completing a control movement. Groove switch is the overall of detection distance because general structure limits only a few centimeters.2, DuiShe type optoelectronic sensor if you put lighter and receive light is separated, can make the detection distance increase. By a lighter and an inbox light sensor into a photoelectric switch is called DuiShe separate photoelectric switches, referred to DuiShe photoelectric switch. Its detection distance can reach a few meters and even a dozen meters. When using light-emitting device and receive light device are installed in test object through the path of the sides, test object by blocking light path, accept light implement action output a switch control signals.3, reflex plate.it photoelectric switch light-emitting device type and receive light device into the same device inside, in its front pack a reflex plate.the using the reflection principle of complete photoelectric control function is called reflex plate.it reflex (or reflector reflex) photoelectric switch. Under normal circumstances, lighter the light reflected by reflex plate.it is received by accept light; Once the light path be test object to block, accept light, the light is not receive photoelectric switch is action, output a switch control signals.4, diffusion reflective photoelectric switches its detection head with a lighter andalso an inbox light ware, but no reflex plate.it ahead. Normally lighter for the light collect light is not found. When test object by blocking the light, and the light reflected light, receive part implement received light signals, output a switch signals.Four, I'm the idea of photoelectric sensorWith the development of science and technology people on measuring accuracy had the higher request, this has prompted the pace with The Times photoelectric sensor have updated, improve the main means photoelectric sensor performance is the application of new materials, new technology manufacturing performance is more superior photoelectric element. For example, today the prototype of the photoelectric sensor is a small metal cylindrical equipment, with a calibration lens, transmitter into receiver focused light, the receiver out of cable to the device got a vacuum tube amplifiers in metal cylinder on the incandescent light bulb inside a small as the light source a strong incandescent lamp sensor. Due to the sensor various defects existing in the fields, gradually faded. To appear, because of it of fiber of excellent performance, then appeared with sensors supporting the use of optical passive components, another fiber without any interference of electromagnetic signal, and can make the sensor of the electronic components and other electrical disturbance in isolation. Have a piece of plastic optical fiber core or glass light core, light outside a metallic core skins and bread this layer metal cortical density lower than light core, so low, the beam refraction in the two materials according to the border (incident Angle within a certain range, reflected), is all. Based on optical principle, all beams can be made by optical fiber to transmission. Two incident beam Angle in an Angle (along the fiber length direction within) by multiple reflections from the other end after injection, another incident angles than accept the incident light in metal skin, loss. This accept Angle within the biggest incident Angle than two times, this is because fiber slightly larger from air into density larger fiber materials hitting may have a slight refraction. In light of the optical fiber transmission from inside the influence of fiber bending (whether more than bending radius minimal bending radius). Most optical fiber is flexible, easy to install in the narrow space. Photoelectric sensor is a kind of non-contact measurement small electronic measurement equipment, rely on detect its receives the light intensity change, to achieve measurement purposes, and it's also a vulnerable to external disturbance and lose the measurement accuracy of the device. When be being designed so besides the choice optoelectronic components, still must set GSCC signal and temperature compensating measures used to weaken or eliminate the impact of these factors.Photoelectric sensor must pass a light modulation, like radio waves of light modulation of sends and receives, the radio to a station, can ignore other radio signal sensors without modulation long-focal-length only through the use of mechanical shielded, scenes that receiver transmitter only can receive the emission of light, can make its energy becomes very high. In contrast, throughmodulation transceivers can ignore ambient light, only to own light or with the same modulation frequencies of light without modulation response. The sensor used to test the infrared rays or around the radiation, if just baked red bottle, in this application situation if use other sensor, may be incorrect actions. Photoelectric sensor due to non-contact, high reliability, etc, and to change in measurement, damage the object to be testedSo since its invention in fields since play a significant role, at present it has been widely used in measuring mechanical quantity, thermal quantity, weight, intelligent vehicle system into etc. Now it in power system automatically grid device plays a very important role, because generator input power grid operation often USES accurate with law, must meet: three-phase line sequence is consistent, frequency, phase agree unanimously, voltage amplitude equal, one of the conditions in system design has been satisfied, after three conditions must also meet to grid, of course, artificially grid is more difficult, photoelectric grid is easier.The development of times, science and technology in the update, photoelectric sensor types are increasing and application domain more and more widely, such as a recent kind of infrared already in intelligent vehicle electrical sensors in to the application, one of which had based on infrared sensor is the core of intelligent vehicle, reflective type infrared sensor using reflex infrared sensor design path detection module and speed monitoring module; Another method based on infrared sensor using the car tracing is to collect infrared sensor data. Photoelectric sensor has cannot be replaced by other sensors superiority, so it development foreground is very good, the application will also become more widespread.光电传感器关键字:光电效应光电元件光电特性传感器分类传感器应用摘要:在科学技术高速发展的现代社会中,人类已经入瞬息万变的信息时代,人们在日常生活,生产过程中,主要依靠检测技术对信息经获取、筛选和传输,来实现制动控制,自动调节,目前我国已将检测技术列入优先发展的科学技术之一。

论文中英文摘要

论文中英文摘要作者姓名:义理林论文题目:光分组交换网中的光信号处理技术研究作者简介:义理林,男,1981年4月出生,2004年9月师从于上海交通大学大学胡卫生教授,于2008年6月获博士学位。

中文摘要我国互联网国际出口总容量从2000年初的351Mbps增长到2006年初的136106Mbps,六年累计增加约430倍。

网络带宽的增长,主要来源于数据业务的大幅度增长。

未来的光网络将向融合分组化交换、支持多样性业务的、光电交换集成的、多颗粒带宽的、传送与交换融合的、安全高效的、灵活组网的方向发展。

光分组交换网络(OPS)是光交换的理想模式,也是公认的光交换结构的终极发展目标。

OPS的主要优点是带宽利用效率高,而且能提供各种服务,满足客户的需求。

目的是把大量的交换业务转移到光域实现,从而实现交换容量与波分复用系统(WDM)的传输容量相匹配。

OPS网络结构中的关键技术包括光开关、光逻辑、全光波长变换以及光缓存等多项技术。

其中关开关是任何光交换网的核心功能器件,完成信号的交换和路由功能;光逻辑则完成信头检测处理重写等功能,用以实现未来的光控光交换;波长变换用于解决网络中的波长冲突,提高网络灵活性。

光缓存是OPS网络必需的器件,用以实现数据包的存储功能,解决信号时间上的冲突;而以上所有的光信号处理都会导致信号的损耗,因此在OPS网络中,光放大器也必不可少,工作于OPS网络中的放大器还需具有宽带,以及增益控制的功能。

只有上述各项技术全面成熟发展,才能推动OPS网络的快速发展,实现真正的全光交换网络。

本论文围绕全光分组交换网络中的关键技术研究开展了如下工作:1.基于SOA/相位调制器的超快光开关光开光是OPS网络的核心功能设备,一个大型的OPS网络需要大规模的超快光开关阵列。

因此,超快(<1ns)以及易于扩展是设计光开关需要考虑的重要因素,同时成本也是不可忽略的另一个重要因素。

SOA和铌酸锂晶体可以支持快速的光开关操作,将SOA或者铌酸锂相位调制器(PM)放置于Sagnac干涉环中可以形成一个2×2的超快光开关,通过比较两者性能,我们最终选择PM-Sagnac干涉光开关。

光纤通信英文版常见中英对照单词表

AAbsorption coefficient 吸收系数ac alternating current 交变电流交流Acoustic phonon 声学声子Active component 有源器件AM amplitude modulation 幅度调制AM,FM,PM:幅度/频率/相位调制AON all-optical network 全光网络AOTF acoustic optic tunable filter 声光调制器APD avalanche photodiode 雪崩二极管AR coatings antireflection coatings 抗反膜ASE amplified spontaneous emission 放大自发辐射ASK amplitude shift keying 幅移键控ASK/FSK/PSK 幅/频/相移键控ATM asynchronous transfer mode 异步转移模式Attenuation coefficient 衰减系数Attenuator 衰减器Auger recombination:俄歇复合AWG arrayed-waveguide grating 阵列波导光栅BBand gap:带隙Band pass filter 带通滤波器Beam divergence 光束发散BER bit error rate 误码率BER:误码率BH buried heterojunction 掩埋异质结Binary representation 二进制表示方法Binary 二进制Birefringence 双折射Birefringence双折射Bitrate-distance product 比特距离的乘积Block diagram 原理图Boltzman statistics:玻尔兹曼统计分布BPF band pass filter 带通滤波器Bragg condition 布拉格条件Bragg diffraction 布拉格衍射Brillouin scattering 布里渊散射Brillouin shift 布里渊频移Broad area 宽面Buried heterostructure 掩埋异质结CC3 cleaved-coupled cavity 解理耦合腔Carrier lifetime:载流子寿命CATV common antenna cable television 有线电视CDM code division multiplexing 码分复用Characteristics temperature 特征温度Chirp 啁啾Chirped Gaussian pulse 啁啾高斯脉冲Chromatic dispersion 色度色散Chromatic dispersion 色度色散Cladding layer:包层Cladding 包层CNR carrier to noise ratio 载噪比Conduction band:导带Confinement factor 限制因子Connector 连接头Core cladding interface 纤芯包层界面Core-cladding interface 芯层和包层界面Coupled cavity 耦合腔CPFSK continuous-phase frequency-shift keying 连续相位频移键控Cross-phase modulation 交叉相位调制Cross-talk 串音CSO Composite second order 复合二阶CSRZ:载波抑制归零码Cutoff condition 截止条件CVD chemical vapour deposition 化学汽相沉积CW continuous wave 连续波Cylindrical preform:预制棒DDBR distributed Bragg reflector 分布布拉格反射DBR: distributed Bragg reflector 分布式布拉格反射器dc direct current 直流DCF dispersion compensating fiber 色散补偿光纤Depressed-cladding fiber: 凹陷包层光纤DFB distributed feedback 分布反馈DFB: Distributed Feedback 分布式反馈Differential gain 微分增益Differential quantum efficiency 微分量子效率Differential-dispersion parameter:微分色散参数Diffusion 扩散Digital hierarchy 数字体系DIP dual in line package 双列直插Direct bandgap:直接带隙Directional coupler 定向耦合器Dispersion compensation fiber:色散补偿光纤Dispersion decreasing fiber:色散渐减光纤Dispersion parameter:色散参数Dispersion shifted fiber 色散位移光纤Dispersion slope 色散斜率Dispersion slope:色散斜率Dispersion-flatten fiber:色散平坦光纤Dispersion-shifted fiber:色散位移光纤Double heterojunction 双异质结Double heterostructure:双异质结Doubly clad:双包层DPSK differential phase-shift keying 差分相移键控Driving circuit 驱动电路Dry fiber 无水光纤DSF dispersion shift fiber 色散位移光纤DWDM dense wavelength divisionmultiplexing/multiplexer密集波分复用/器DWDM: dense wavelength division multiplexing密集波分复用E~GEDFA erbium doped fiber amplifier 掺铒光纤激光器Edge emitting LED 边发射LEDEdge-emitting 边发射Effective index 有效折射率Eigenvalue equation 本征值方程Elastic scattering 弹性散射Electron-hole pairs 电子空穴对Electron-hole recombination 电子空穴复合Electron-hole recombination:电子空穴复合Electrostriction 电致伸缩效应Ethernet 以太网External cavity 外腔External quantum efficiency 外量子效率Extinction ratio 消光比Eye diagram 眼图FBG fiber-bragg grating 光纤布拉格光栅FDDI fiber distributed data interface 光纤数据分配接口FDM frequency division multiplexing频分复用FDM:频分复用Fermi level 费米能级Fermi level:费米能级Fermi-Dirac distribution:费米狄拉克分布FET field effect transistor 场效应管Fiber Manufacturing:光纤制作Field radius 模场半径Filter 滤波器Flame hydrolysis 火焰裂解FM frequency modulation 频率调制Forward-biased :正向偏置FP Fabry Perot 法布里-珀落Free spectral range 自由光谱范围Free-space communication 自由空间光通信系统Fresnel transmissivity 菲涅耳透射率Front end 前端Furnace 熔炉FWHM full width at half maximum 半高全宽FWHM: 半高全宽FWM four-wave mixing 四波混频Gain coefficient 增益系数Gain coupled 增益耦合Gain-guided semiconductor laser 增益波导半导体激光器Germania 锗GIOF graded index optical fiber 渐变折射率分布Graded-index fiber 渐变折射率光纤Group index 群折射率GVD group-velocity dispersion 群速度色散GVD: 群速度色散H~LHBT heterojunction-bipolar transistor异质结双极晶体管HDTV high definition television 高清晰度电视Heavy doping:重掺杂Heavy-duty cable 重型光缆Heterodyne 外差Heterojunction:异质结HFC hybrid fiber-coaxial 混合光纤/电缆Higher-order dispersion 高阶色散Highpass filter 高通滤波器Homodyne 零差Homojunction:同质结IC integrated circuit 集成电路IM/DD intensity modulation with direct detection 强度调制直接探测IM/DD: 强度调制/直接探测IMD intermodulation distortion 交互调制失真Impulse 冲激Impurity 杂质Index-guided 折射率导引Indirect bandgap:非直接带隙Inelastic scattering 非弹性散射Inhomogeneous非均匀的Inline amplifier 在线放大器Intensity noise 强度噪声Intermodal dispersion:模间色散Intermode dispersion 模间色散Internal quantum efficiency:内量子效率Intramodal dispersion: 模内色散Intramode dispersion 模内色散Intrinsic absorption 本征吸收ISDN integrated services digital network 综合业务数字网ISI intersymbol interference 码间干扰Isotropic 各向同性Jacket 涂层Jitter 抖动Junction:结Kinetic energy:动能Lambertian source 朗伯光源LAN local-area network 局域网Large effective-area fiber 大有效面积发光Laser threshold 激光阈值Laser 激光器Lateral mode 侧模Lateral 侧向Lattice constant:晶格常数Launched power 发射功率LD laser diode 激光二极管LD:激光二极管LED light emitting diode 发光二极管LED: 发光二极管L-I light current 光电关系Light-duty cable 轻型光缆Linewidth enhancement factor 线宽加强因子Linewidth enhancement factor 线宽增强因子Linewidth 线宽Longitudinal mode 纵模Longitudinal model 纵模Lowpass filter 低通滤波器LPE liquid phase epitaxy 液相外延LPE:液相外延M~NMacrobending 宏弯MAN metropolitan-area network 城域网Material dispersion 材料色散Material dispersion:材料色散Maxwell’s equations 麦克斯韦方程组MBE molecular beam epitaxy 分子束外延MBE:分子束外延MCVD Modified chemical vapor deposition改进的化学汽相沉积MCVD:改进的化学汽相沉积Meridional rays 子午光线Microbending 微弯Mie scattering 米氏散射MOCVD metal-organic chemical vapor deposition金属有机物化学汽相沉积MOCVD:改进的化学汽相沉积Modal dispersion 模式色散Mode index 模式折射率Modulation format 调制格式Modulator 调制器MONET Multiwavelength optical network 多波长光网络MPEG motion-picture entertainment group视频动画专家小组MPN mode-partition noise 模式分配噪声MQW multiquantum well 多量子阱MQW: 多量子阱MSK minimum-shift keying 最小频偏键控MSR mode-suppression ratio 模式分配噪声MSR: Mode suppression ratio 模式抑制比Multimode fiber 多模光纤MZ mach-Zehnder 马赫泽德NA numerical aperture 数值孔径Near infrared 近红外NEP noise-equivalent power 等效噪声功率NF noise figure 噪声指数Nonradiative recombination 非辐射复合Nonradiative recombination:非辐射复合Normalized frequency 归一化频率NRZ non-return to zero 非归零NRZ:非归零码NSE nonlinear Schrodinger equation 非线性薛定额方程Numerical aperture 数值孔径Nyquist criterion 奈奎斯特准则O P QOC optical carrier 光载波OEIC opto-electronic integrated circuit 光电集成电路OOK on-off keying 开关键控OOK:通断键控OPC optical phase conjugation 光相位共轭Optical mode 光模式Optical phase conjugation 光相位共轭Optical soliton 光孤子Optical switch 光开关Optical transmitter 光发射机Optical transmitter:光发射机OTDM optical time-division multiplexing 光时分复用OVD outside-vapor deposition 轴外汽相沉积OVD:轴外汽相沉积OXC optical cross-connect 光交叉连接Packaging 封装Packet switch 分组交换Parabolic-index fiber 抛物线折射率分布光纤Passive component 无源器件PCM pulse-code modulation 脉冲编码调制PCM:脉冲编码调制PCVD:等离子体化学汽相沉积PDF probability density function 概率密度函数PDM polarization-division multiplexing 偏振复用PDM:脉冲宽度调制Phase-matching condition 相位匹配条件Phase-shifted DFB laser 相移DFB激光器Photon lifetime 光子寿命PMD 偏振模色散Polarization controller 偏振控制器Polarization mode dispersion:偏振模色散Polarization 偏振PON passive optical network 无源接入网Population inversion:粒子数反转Power amplifier 功率放大器Power-conversion efficiency 功率转换效率PPM:脉冲位置调制Preamplifer 前置放大器PSK phase-shift keying 相移键控Pulse broadening 脉冲展宽Quantization noise 量化噪声Quantum efficiency 量子效率Quantum limit 量子极限Quantum limited 量子极限Quantum noise 量子噪声RRA raman amplifier 喇曼放大器Raman scattering 喇曼散射Rate equation 速率方程Rayleigh scattering 瑞丽散射Rayleigh scattering 瑞利散射Receiver sensitivity 接收机灵敏度Receiver 接收机Refractive index 折射率Regenerator 再生器Repeater spacing 中继距离Resonant cavity 谐振腔Responsibility 响应度Responsivity 响应度Ridge waveguide laser 脊波导激光器Ridge waveguide 脊波导RIN relative intensity noise 相对强度噪声RMS root-mean-square 均方根RZ return-to-zero 归零RZ: 归零码SSAGCM separate absorption, grading, charge, and multiplication吸收渐变电荷倍增区分离APD的一种SAGM separate absorption and multiplication吸收渐变倍增区分离APD的一种SAM separate absorption and multiplication吸收倍增区分离APD的一种Sampling theorem 抽样定理SBS 受激布里渊散射SBS stimulated Brillouin scattering 受激布里渊散射SCM subcarrier multiplexing 副载波复用SDH synchronous digital hierarchy 同步数字体系SDH:同步数字体系Self-phase modulation 自相位调制Sellmeier equation:塞米尔方程Sensitivity degradation 灵敏度劣化Sensitivity 灵敏度Shot noise 散粒噪声Shot noise 散粒噪声Single-mode condition 单模条件Sintering :烧结SIOF step index optical fiber 阶跃折射率分布SLA/SOA semiconductor laser/optical amplifier 半导体光放大器SLM single longitudinal mode 单纵模SLM: Single Longitudinal mode单纵模Slope efficiency 斜率效率SNR signal-to-noise ratio 信噪比Soliton 孤子SONET synchronized optical network 同步光网络SONET:同步光网络Spectral density:光谱密度Spontaneous emission:自发辐射Spontaneous-emission factor 自发辐射因子SRS 受激喇曼散射SRS stimulated Raman scattering 受激喇曼散射Step-index fiber 阶跃折射率光纤Stimulated absorption:受激吸收Stimulated emission:受激发射STM synchronous transport module 同步转移模块STM:同步转移模块Stripe geometry semiconductor laser 条形激光器Stripe geometry 条形STS synchronous transport signal 同步转移信号Submarine transmission system 海底传输系统Substrate:衬底Superstructure grating 超结构光栅Surface emitting LED 表面发射LEDSurface recombination:表面复合Surface-emitting 表面发射TTCP/IP transmission control protocol/internet protocol传输控制协议/互联网协议TDM time-division multiplexing 时分复用TDM:时分复用TE transverse electric 横电模Ternary and quaternary compound:三元系和四元系化合物Thermal equilibrium:热平衡Thermal noise 热噪声Thermal noise 热噪声Threshold current 阈值电流Timing jitter 时间抖动TM transverse magnetic 横磁Total internal reflection 全内反射Transceiver module 收发模块Transmitter 发射机Transverse 横向Transverse mode 横模TW traveling wave 行波U ~ ZVAD vapor-axial epitaxy 轴向汽相沉积VAD:轴向沉积Valence band:价带VCSEL vertical-cavity surface-emitting laser垂直腔表面发射激光器VCSEL: vertical cavity surface-emitting lasers 垂直腔表面发射激光器VPE vapor-phase epitaxy 汽相沉积VPE:汽相外延VSB vestigial sideband 残留边带Wall-plug efficiency 电光转换效率WAN wide-area network 广域网Waveguide dispersion 波导色散Waveguide dispersion:波导色散Waveguide imperfection 波导不完善WDMA wavelength-division multiple access 波分复用接入系统WGA waveguide-grating router 波导光栅路由器White noise 白噪声XPM cross-phase modulation 交叉相位调制YIG yttrium iron garnet 钇铁石榴石晶体Zero-dispersion wavelength 零色散波长Zero-dispersion wavelength:零色散波长。

第十二讲 SOA introduction

17
Principle explanation

SPM and XPM


SPM, gain saturation induces the carrier density variation, therefore the refractive index changes accordingly, corresponding to phase variation of the input signal. SPM induced frequency chirp for dispersion compensation. XPM, the PHASE of one channel is modulated by another amplitude-modulated channel. Both channels have data (DPSK and OOK) – XGM and XPM induced crosstalk; Only one channel 18 has data – wavelength conversion…
16
Principle explanation

SGM and XGM


SGM, gain saturation for single channel, low amplitude (0) has higher gain and high amplitude (1) has lower gain. Limit amplifier… XGM, the gain of one channel is modulated by another channel. Both channels have data - XGM induced crosstalk; Only one channel has data – wavelength conversion…

光通讯行业专业英语词汇

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Acknowledgement: this work was funded by Science Foundation Ireland grant 06/IN/I969.
978-1-4577-1473-3/12/$26.00 ©2012 IEEE
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8th IEEE, IET International Symposium on Communication Systems, Networks and Digital Signal Processing
All-Optical Wavelength Conversion and Regeneration in SOAs
R.P. Webb, J.M. Dailey and R.J. Manning
Tyndall National Institute & Department of Physics, University College Cork, Lee Maltings, Cork, Ireland rod.webb@tyndall.ie four-wave mixing products [9], a feature that can be exploited to obtain a range of novel phase sensitive signal processing functions. In the following two sections, we present two examples from our recent work that illustrate the use of SOAs to process phase encoded signals: generation of an 8-phaseshift keyed (8PSK) signal [10] and conversion of quaternary (Q)PSK to two binary (B)PSK signals by fourwave mixing [11]. II. GENERATION OF 21.3 GBAUD 8PSK
H1A
2
Phase Difference (radians / )
*
OOK Pump (1550 nm ) QPSK Input (1562 nm ) Holding Beam (1555 nm )

8PSK Output Bandpass Filter (1562 nm )
SOA 2
Figure 1. SOA-based MZI all-optical phase modulator. Control of the phase bias allows effective suppression of XGM
*
I. INTRODUCTION Nonlinear semiconductor optical amplifiers (SOAs) continue to offer potential benefits for optical signal processing in communication systems despite the widespread use of digital signal processing (DSP). Whereas DSP provides unsurpassed flexibility for the generation of advanced modulation formats and the compensation for transmission impairments, it does so at the cost of substantial power consumption [1]. Energy consumption is widely recognised as a major limitation to the future growth of the internet because telecommunication systems already account for 1% of the power requirements of a typical industrialised country [2]. At present, most of this power is consumed by routers, but as more efficient network architectures are adopted, pressure to improve the energy efficiency of transmission systems will follow. Consequently, opportunities to transfer some processing functions to the optical domain should continue to be sought if power can be saved by doing so. SOAs, having modest power requirements and small size, are excellent nonlinear devices for signal processing [3]. Their gain enables them to operate with low optical input powers and simplifies the cascading of devices. The use of differential operation [4] with various techniques to increase the effective speed of response [5-7] has enabled wavelength conversion and logic operations on amplitude shift keyed (ASK) signals at speeds far beyond the limit imposed by their inherent recovery time. Residual patterning, a feature of most SOA-based gates, can also be overcome with the aid of complementary signals [8]. Many of the advantages of SOAs are equally applicable to processing modern phase encoded data formats. Although a time-varying power envelope is required to stimulate the nonlinear response, such a power variation is readily obtained from a phase encoded signal by inserting an interferometer before the SOA. The strong cross-phase modulation (XPM) that results facilitates the generation of a phase encoded output signal. Placing the SOA inside an appropriately tuned Mach-Zehnder interferometer (MZI) can cancel the unwanted amplitude modulation, as shown in the next section. SOAs are also efficient generators of
A. Principle The 8PSK modulation format provides an extra bit per symbol compared to QPSK [12, 13], but retains the constant symbol amplitude and reduced susceptibility to nonlinear transmission impairments [14]. A QPSK signal can be converted to 8PSK by a further stage of phase modulation, and if the additional data is in optical form, then the modulation may conveniently be implemented by XPM in an SOA. The unwanted cross-gain modulation (XGM) can be cancelled by placing the SOA in an MZI (Fig. 1), whose normalised outputs for the two states of the binary channel are given by:
SOA 1 Phase Bias
Abstract—We argue that the use of nonlinear semiconductor optical amplifiers for all-optical processing of phase encoded signals offers potential benefits. To illustrate the point, we demonstrate QPSK to 8PSK conversion and decomposition of QPSK to two BPSK outputs at new wavelengths by fourwave mixing.
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