MDD整流轴向二极管 1N4001-1N4007
in4001的参数
in4001的参数1. 任务背景在进行电子电路设计和分析时，经常需要使用各种不同类型的元器件。
其中，电阻器是最基本、最常见的元器件之一。
它用于限制电流、调整电压以及实现各种电路功能。
而in4001则是一种常用的整流二极管，也是电子电路中不可或缺的元器件之一。
2. in4001的概述in4001是一款硅整流二极管，被广泛应用于低频整流电路中。
它具有以下主要特点：•正向最大导通电压为1V•反向最大耐受电压为50V•正向最大平均整流电流为1A•正向最大峰值反向浪涌电流为30A•工作温度范围为-65°C至+175°C3. in4001的参数详解3.1 正向最大导通电压（VF）正向最大导通电压（VF）指在正向工作状态下，二极管能够承受的最大导通电压。
对于in4001来说，其正向最大导通电压为1V。
当二极管处于正向偏置状态时，超过该导通电压的电压将导致二极管开始导通。
3.2 反向最大耐受电压（VR）反向最大耐受电压（VR）指在反向工作状态下，二极管能够承受的最大反向电压。
对于in4001来说，其反向最大耐受电压为50V。
当二极管处于反向偏置状态时，超过该耐受电压的电压将导致二极管击穿。
3.3 正向最大平均整流电流（IF(AV)）正向最大平均整流电流（IF(AV)）指在正常工作条件下，二极管能够承受的最大平均整流电流。
对于in4001来说，其正向最大平均整流电流为1A。
超过该数值的平均整流电流会导致二极管过热损坏。
3.4 正向最大峰值反向浪涌电流（IFRM）正向最大峰值反向浪涌电流（IFRM）指在瞬间工作条件下，二极管能够承受的最大峰值反向浪涌电流。
对于in4001来说，其正向最大峰值反向浪涌电流为30A。
当电路中出现瞬时大电流冲击时，该参数能够保证二极管的正常工作。
3.5 工作温度范围（Tj）工作温度范围（Tj）指二极管能够正常工作的温度范围。
对于in4001来说，其工作温度范围为-65°C至+175°C。
1N4001数据手册_引脚图_参数
整流二极管 1N4001-4007 参数资料
FEATURES• Low coat construction • Low forward voltage drop • Low reverse leakage• High forward surge current capability •High temperature soldering guaranteed:260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tensionMECHANICAL DATA• Case: Transfer molded plastic• Epoxy: UL94V-O rate flame retardant • Polarity: Color band denotes cathode end• Lead: Plated axial lead, solderable per MIL-STD-202E method 208C • Mounting position: Any•Weight: 0.012 ounce, 0.33 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS• Ratings at 25O C ambient temperature unless otherwise specified • Single Phase, half wave, 60Hz, resistive or inductive load •For capacitive load derate current by 20%SYMBOLS1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking VoltageV DC 50 100 200 400 600 800 1000 VoltsMaximum Average Forward Rectified Current 0.375”(9.5mm) lead length at T A = 25℃ I (AV) 1.0 Amps Peak Forward Surge Current8.3mS single half sine wave superimposed on rated load (JEDEC method)I FSM 30 Amps Maximum Instantaneous Forward Voltage @ 1.0A V F 1.1Volts T A = 25℃ 5.0 Maximum DC Reverse Current at Rated DC Blocking Voltage per elementT A = 100℃I R 50 µA Maximum Full Load Reverse Current, full cycle average 0.375”(9.5mm)lead length at T L =75℃ I R(AV) 30 µA Typical Junction Capacitance (Note 1) C J 13 pFTypical Thermal Resistance (Note 2) R θJA 50 ℃/W Operating Junction Temperature Range T J -55 to +150 ℃Storage Temperature RangeT STG-55 to +150℃Notes:1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.2. Thermal Resistance from junction to terminal 6.0mm 2 copper pads to each terminal.3. The chip size is 40mil ×40mil1.0(25.4)MIN.1.0(25.4)MIN..205(5.2).166(4.2).107(2.7).080(2.0)DIA..034(0.9).028(0.7)DIA.Dimensions in inches and (millimeters)DO-41CURRENT 1.0 Ampere140I N S T A N T A N E O U S R E V E R S E C U R R E N T ,I N S T A N T A N E O U S F O R W A R D C U R R E N T ,C A P A C I T A N C E ,(p F )TJ=25°C F=1MHzREVERSE VOLTAGE,(VOLTS)100.14.01.010.0FIG.5-TYPICAL JUNCTION CAPACITANCEINSTANTANEOUS FORWARD VOLTAGE,(V)10100(A )0.11Pulse Width=300us 1% Duty CycleT =25°C100PERCENT OF RATED PEAKREVERSE VOLTAGE,(%)(m A )0.010.11.0T =25°C AMBIENT TEMPERATURE, (°C)FORWARD CHARACTERISTICSFIG.3-TYPICAL INSTANTANEOUS(A )A V E R A G E F O R W A R D C U R R E N T ,25Resistive or Half Wave 60Hz Inductive LoadSingle Phase 000.4500.60.875FIG.1-TYPICAL FORWARD CURRENTDERATING CURVEFIG.4-TYPICAL REVERSE FORWARD SURGE CURRENT(JEDEC Method) =T 8.3ms Single Half Sine-Wave NUMBER OF CYCLES AT 60 Hz10P E A K F O R W A R D S U R G EC U R R E N T , (A )10252030CHARACTERISTICST =100°C jmaxT FIG.2-MAXIMUM NON-REPETITIVE PEAKRATING AND CHRACTERISTIC CURVES 1N4001 Thur 1N40070.21.01.2。
贴片二极管1N4007(M7)规格书
VDC
50 100 200 400 600 800 1000
IF(AV)
1.0
IFSM
30
IR(AV)
30
单位 Unit
V V V A A µA
典型热阻 Typical thermal resistance
RθJA
75
℃/W
工作结温和存储温度
Tj,ቤተ መጻሕፍቲ ባይዱTSTG
-50 --- +150
℃
Operating junction and storage temperature range
10
100
脉冲宽度 t, Pulse Duration, sec
-2-
IF = 1.0A
VF
1.1
V
Maximum forward voltage
最大反向电流 Maximum reverse current
TA= 25℃ TA=100℃
IR
5.0
µA
100
典型结电容 VR = 4.0V, f = 1MHz
Cj
15
pF
Type junction capacitance
-1-
反向电流 IR (mA) IR Instantaneous Reverse Current (mA)
峰值正向浪涌电流 IFSM(A) IFSM Peak Forward Surge Current (A)
M1 ...... M7
浪涌特性曲线（最大值） MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT
典型热阻 RθJA (℃/W) RθJA Transient Thermal Impedance (℃/W)
中国二极管命名规则
中国二极管命名规则全文共四篇示例，供读者参考第一篇示例：中国二极管的命名规则在国际上是共通的，但因为两国的历史和文化背景不同，在命名上也存在少许的差异。
而中国对于二极管的命名规则还是比较独特的，下面就让我们来详细了解一下中国二极管的命名规则。
在中国，二极管通常是按照其用途、特性和封装形式来命名的。
一般来说，二极管的命名是根据其类型、封装和特性来确定的，其中常见的类型有整流二极管、开关二极管、稳压二极管等。
我们来看一下整流二极管的命名规则。
在整流二极管的命名中，通常会包含型号和封装形式两部分。
型号部分通常是以字母或数字来表示，而封装形式则是用字母或数字来表示，比如1N4007，其中1N 表示整流二极管，而4007则表示其具体型号。
除了整流二极管外，开关二极管的命名规则也比较常见。
在开关二极管的命名中，通常会包含P、N或S等标志，用来表示其极性。
比如P600，其中P表示正型，而600代表具体的型号。
开关二极管的命名规则也是按照其电流和功率等特性来确定的。
稳压二极管也是比较常见的一种二极管类型。
稳压二极管通常会包含Z开头的标志，用来表示其稳压特性。
比如Zener二极管，其命名规则通常是以字母Z开头，后面跟上具体的型号。
而在具体型号中，通常会包含其稳压特点和电压等信息。
从以上的介绍可以看出，中国二极管的命名规则是比较简单清晰的。
通过型号和封装形式的结合，可以很方便地确定二极管的种类和具体特性。
中国二极管的命名规则也比较容易理解和记忆，适合广泛的应用场景。
中国二极管的命名规则虽然有些不同于国际标准，但仍然能够满足实际需求。
通过了解和掌握中国二极管的命名规则，可以更好地选择和使用合适的二极管，从而提高电子产品的性能和可靠性。
希望以上介绍能够帮助大家更好地理解中国二极管的命名规则，为实际应用提供帮助。
第二篇示例：中国二极管的命名规则是指在二极管的命名中所遵循的一系列规则和约定。
二极管是一种常用的半导体器件，用于电子电路中的整流、开关、放大等功能。
用于整流二极管的型号
用于整流二极管的型号、特性以及应用
整流二极管是一种半导体器件，它具有很高的击穿电压，能够有效地抑制电路中的不受控制的冲击，并可以将正弦波形的交流电信号转换成直流电信号。
它分为三类：1. 直流整流二极管；2. 交流整流二极管；3. 变压器整流二极管。
1. 直流整流二极管：这种整流二极管具有较高的击穿电压，可以在DC电路中作为整流装置使用。
通常采用
1N4001, 1N4007, 1N5402, 1N5401或者1N5819等型号。
2. 交流整流二极管：这种整流二极管具有较低的击穿电压，可以在AC电路中作为整流装置使用。
通常采用
1N4148, 1N4004, 1N4006, 1N4002等型号。
3. 变压器整流二极管：这种整流二极管具有较高的击穿电压，可以在变压器输出电路中作为整流装置使用。
通常采用1N5408, 1N5407, 1N5406, 1N5405等型号。
应用：整流二极管的应用非常广泛，它们可以用来控制直流电路中的电流，也可以用来抑制波形电路中的不受控制的冲击，还可以用来将交流电信号转换成直流电信号。
1N4007WS二极管
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz resistive or inductive load
0.0 25 50 75 100
125
150
175
Case Temperature (°C)
Instaneous Reverse Current (μA)
Fig.2 Typical Instaneous Reverse Characteristics
1N4001WS THRU 1N4007WS
SOD-323
1.40(0.055) 1.20(0.047)
2.75(0.108) 2.55(0.100)
1.80(0.07) 1.40(0.063)
.15(.0059) .08(.0031)
0.4(0.016) 0.25(0.0098)
1.10(.043) 0.80(.032)
MDD Catalog Number
SYMBOLS 4001
Marking code
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=125 C
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak Forward Surage Curre
15
10
5 8.3 ms Single Half Sine Wave
(JEDEC Method)
1N4007WS二极管规格书
600 420 600
800 560 800
1000 700 1000
VOLTS VOLTS VOLTS Amps
IFSM VF IR RθJA Trr CJ
25 1.1 5.0 50.0 55 1800 5 -55 to +150
Amps Volts µA C/W Ns resistance (NOTE 1) Typical reverse recovery time (NOTE 2) Typical junction capacitance (NOTE 3)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A)
40 35 30 25 20 15 10 5 00 1 10 100
8.3 ms Single Half Sine Wave (JEDEC Method)
Operating junction and storage temperature range TJ,TSTG NOTE
（1）P.C.B. mounted with 0.2" X 0.2" (5 X 5 mm) copper pad areas. （2）Measured with I F =0.5A,I R =1A , I rr = 0.25A （3）Measured at 1 MHz and applied reverse voltage of 4 V D.C
MDD Catalog Number
Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=125 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage TA=25 C TA=100 C
1N4007整流二极管的主要参数及封装图尺寸
1N4007整流⼆极管的主要参数及封装图尺⼨1N4007是⼀种硅材料整流⼆极管，把⽅向交替变化的交流电换成单⼀⽅向的脉冲直流电，⼴泛应⽤于各种交流变直流的整流电路中。
直插⼆极管1N4007，低频整流⼆极管，正向平均电流1A，耐压1000V，封装DO-41，应⽤范围极其⼴泛。
虽然很多客户都知道⼆极管1N4007这个物料，但是有关1N4007⼆极管参数和特性，却略知⼀⼆。
接下来⼆极管⼚家东沃DOWO重点要分享的是直插整流⼆极管1N4007的参数和特性，看完就明⽩了。
1N4007直插整流⼆极管基本参数封装形式：DO-41反向重复峰值电压：1000V正向平均电流：1.0A正向不重复浪涌电流：30A正向峰值电压：1V反向漏电流（Ta=25°C）：5uA热阻（典型，结和环境之间）：55°C/W热阻（典型，结和引线之间）：25°C/W结温：-55 °C to 125°C储存温度：-55 °C to 150°C1N4007直插整流⼆极管主要特性正向浪涌承受能⼒强低反向漏电流250℃/10 秒，0.375“ （9.5mm）引线长度引线可承受5 磅（2.3kg）拉⼒⾼温焊接保证极性：⾊环端为负极端⼦：镀锡轴向引线安装位置：任意1N4007⼆极管属于1N4001-1N4007*系列型号之⼀，具体型号还有：1N4001、1N4002、1N4003、1N4004、1N4005、1N4006、1N4007、1N4007*，对应的反向重复峰值电压分别是50V、100V、200V、400V、600V、800V、1000V、1200V，更多硅整流⼆极管产品，尽在⼆极管⼚家东沃电⼦DOWOSEMI!。
1N4001
© 2009 Fairchild Semiconductor Corporation 1N4001 - 1N4007 Rev. C21* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal CharacteristicsElectrical Characteristics T A = 25°C unless otherwise notedSymbolParameterValueUnits4001400240034004400540064007V RRM Peak Repetitive Reverse Voltage 501002004006008001000V I F(AV)Average Rectified Forward Current .375 " lead length @ T A = 75°C 1.0A I FSM Non-Repetitive Peak Forward Surge Current 8.3ms Single Half-Sine-Wave 30A I 2t Rating for Fusing ( t<8.3ms ) 3.7A 2sec T STG Storage Temperature Range -55 to +175°C T JOperating Junction Temperature-55 to +175°CSymbolParameter ValueUnitsP D Power Dissipation3.0W R θJAThermal Resistance, Junction to Ambient50°C/WSymbolParameterValueUnitsV F Forward Voltage @ 1.0A1.1V I rr Maximum Full Load Reverse Current, FullCycle T A = 75°C 30µA I R Reverse Current @ Rated V R T A = 25°C T A = 100°C 5.050µA µA C TTotal Capacitance V R = 4.0V, f = 1.0MHz15pF© 2009 Fairchild Semiconductor Corporation 1N4001 - 1N4007 Rev. C2 2Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL™Current Transfer Logic™ EcoSPARK®EfficentMax™ EZSWITCH™*™*®Fairchild®Fairchild Semiconductor®FACT Quiet Series™ FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FPS¥FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max™GTO¥IntelliMAX¥ISOPLANAR¥MegaBuck™MICROCOUPLER¥MicroFET¥MicroPak¥MillerDrive™MotionMax™Motion-SPM™OPTOLOGIC®OPTOPLANAR®®PDP SPM™Power-SPM¥PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥™Saving our world, 1mW/W/kW at a time™SmartMax™SMART START¥SPM®STEALTH™SuperFET¥SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS™SyncFET™Sync-Lock™®*TinyBoost¥TinyBuck¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TriFault Detect¥TRUECURRENT¥*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation ofcounterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage ourcustomers to do their part in stopping this practice by buying direct or from authorized distributors.© 2008 Fairchild Semiconductor Corporation 。
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Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.012 ounce, 0.33 grams
0 0 25 50 75 100 125 150 175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES 1N4001 THRU 1N4007
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase Half Wave 60Hz Resistive or inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WANumber
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range
0.01 0.6 0.8 1.0 1.2 1.4 1.5
0.1 TJ=25 C
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
TRANSIENT THERMAL IMPEDANCE, C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200 100 TJ=25 C
10
10
1
0.1 0.01 0.1 1 10 100
1 0.1 1.0 10 100
1N4001 THRU 1N4007
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
800 560 800
1000 700 1000
IFSM VF IR CJ RθJA TJ,TSTG
30.0 1.1 5.0 50.0 15.0 50.0 -50 to +150
Amps Volts µA pF C/W C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375 (9.5mm)lead length,P.C.B. mounted ”
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD CURRENT,AMPERES
20 10
100
TJ=150 C
1
10
0.1
TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE
TJ=100 C 1
SYMBOLS
1N 4001
1N 4002
1N 4003
1N 4004
1N 4005
1N 4006
1N 4007
UNITS VOLTS VOLTS VOLTS Amp
VRRM VRMS VDC I(AV)
50 35 50
100 70 100
200 140 200
400 280 400 1.0
600 420 600
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
0.205 (5.2) 0.160(4.1)
MECHANICAL DATA
1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.70) DIA.
Dimensions in inches and (millimeters)