s8261系列规格书

SOT-23-6 (6-pin) SNB(B) (6-pin)
T Applications
T Package
• Lithium-ion rechargeable battery packs
• 6-Pin SOT-23-6 (PKG drawing code : MP006-A)
• Lithium polymer rechargeable battery packs • 6-Pin SNB(B) (PKG drawing code : BD006-A)
Accuracy : ±25mV (+25°C) and ±30mV (-5°C to +55°C)
0.0V to 0.4V (*1)
Accuracy : ±25mV
The overcharge hysteresis voltage can be selected from the range 0.0V to 0.4V in 50mV step. *1: Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis voltage
(where overdischarge release voltage>3.4V is prohibited.)
• Overcurrent 1 detection voltage 0.05V to 0.3V (10mV step) Accuracy : ±15mV
• Overcurrent 2 detection voltage 0. 5V (fixed)
Seiko Instruments Inc.
3
BATTERY PROTECTION IC for SINGLE-CELL PACK S-8261 Series
Pin Assignment
Rev.1.1
6 54 SOT-23-6 Top view
1 23
Figure 2
Pin No. 1 2
3 4 5
Seiko Instruments Inc.
1
BATTERY PROTECTION IC for SINGLE-CELL PACK S-8261 Series
Block Diagram
VDD
DP
Oscillator control circuit
Output control circuit
Divider control logic
Rev.1.1
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
T Features
The S-8261 series are lithium-ion/lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuit and delay circuit. The S-8261 series are suitable for protection of single-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent.
(4) Three-step overcurrent detection circuit is included. (overcurrent 1, overcurrent 2, and load shortcircuiting)
(5) Either charge function or charge inhibition function for 0V battery can be selected.
Delay time
Symbol
Selection range
Overcharge detection delay time
tCU
0.15 s 1.2 s
Overdischarge detection delay time
tDL
36 ms 144 ms
Overcurrent 1 detection delay time
• When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger detection voltage (-0.7V typ.), the output voltage of the CO pin goes low. (Abnormal charge current detection function)
(7) Low current consumption
• Operation
3.5 µA typ.
• Power-down
0.1 µA max.
(8) Wide operating temperature range:
7.0 µA max. -40°C to +85°C
(9) Small package
Figure 1 Block Diagram
2
Seiko Instruments Inc.
Rev.1.1
BATTERY PROTECTION IC for SINGLE-CELL PACK S-8261 Series
Selection Gui百度文库e
Naming of product model number
Accuracy : ±100mV
(2) High voltage device is used for charger connection pins
VM and CO pins: absolute maximum rating = 28V
(3) Delay times (overcharge: tCU, overdischarge: tDL, overcurrent 1: tlOV1, overcurrent 2: tlOV2) are generated by an internal circuit. No external capacitor is necessary. Accuracy : ±20%
tlOV1
4.5 ms 9 ms
* Values surrounded by bold lines are used in standard products.
4.6 s 290 ms 18 ms
Remarks
Choose from the left. Choose from the left. Choose from the left.
Symbol DO VM
CO DP VDD
Description
FET gate control pin for discharge (CMOS output)
Voltage detection pin between VM and VSS (Overcurrent detection pin)
FET gate control pin for charge (CMOS output)
Model number: S-8261Axxyy − abbreviation code (3 letters) −zz
Symbol
Meaning
Description
xx
Serial code
Assigned from AA to ZZ in alphabetical order.
yy
Package form MD:SOT-23-6 BD:SNB
Test pin for delay time measurement
(where overcharge release voltage<3.8V is prohibited.)
• Overdischarge detection voltage 2.0V to 3.0 V (10mV step) Accuracy : ±50mV
• Overdischarge hysteresis voltage 0.0V to 0.7 V (*2)
1.2 s
1.2 s
1.2 s
Overdischarge detection delay time
144 ms
144 ms
144 ms
Overcurrent 1 detection delay time
9 ms
9 ms
9 ms
It is possible to change the detection voltages of the product other than above. The delay times can also be changed within the range listed bellow. For details, please contact our sales office.
+
Overcurrent 1
−
detection comparator
+
Overcurrent 2
−
detection comparator
+
Load short-circuiting − detection comparator
CO
RVMD VM
RVMS
Note: Diodes in the figure are parasitic diodes.
(1) Internal high accuracy voltage detection circuit
• Overcharge detection voltage • Overcharge hysteresis voltage
3.9V to 4.4V (applicable in 5mV step)
Overcharge release voltage 0.2 V
0.2 V
0.25V
Overdischarge detection
voltage
2.3 V
Overdischarge
release voltage
2.3 V
Overcurrent 1 detection voltage
0.16 V
2.3 V
zz
Tape direction T2:SOT-23-6 TF:SNB
Model No.
S-8261AAGMD-G2G -T2 S-8261AAHMD-G2H -T2 S-8261AAJMD-G2J -T2
Overcharge detection voltage 4.28 V
4.28 V
4.325V
0V battery charge/charge inhibition circuit
Rev.1.1
DO
VSS
+ − Overcharge detection comparator
Overdischarge detection comparator
+ −
Charger detection circuit
(6) Charger detection function and abnormal charge current detection function
• The overdischarge hysteresis is released by detecting negative voltage at the VM pin (-0.7V typ.). (Charger detection function)
Accuracy : ±50mV
The overdischarge hysteresis voltage can be selected from the range 0.0V to 0.7V in 100mV step. *2: Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
2.3 V
0.08 V
2.5V
0.4V
0.15V
0V battery charge function
Yes Yes
None
Model No.
S-8261AAGMD-G2G -T2 S-8261AAHMD-G2H -T2 S-8261AAJMD-G2J -T2
Overcharge detection delay time