BYQ28EB-100中文资料

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCTVishay General SemiconductorDocument Number: 88549For technical questions within your region, please contact one of the following:Dual Common Cathode Ultrafast RectifierFEATURES•Glass passivated chip junction •Ultrafast recovery times •Soft recovery characteristics •Low switching losses, high efficiency •High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes,dc-to-dc converters and polarity protection application.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets J ESD 201 class 2whisker testPolarity: As markedMounting Torque: 10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV) 5 A x 2V RRM 100 V , 150 V , 200 VI FSM 55 A t rr 25 ns V F 0.895 V T J max.150 °CTO-220AB1231KTO-263AB MAXIMUM RATINGS (T C = 25 °C unless otherwise noted)PARAMETERSYMBOLUG10BCT UG10CCT UG10DCTUNITBYQ28E-100 BYQ28E-150 BYQ28E-200Maximum repetitive peak reverse voltage V RRM 100 150 200 V Working peak reverse voltage V RWM 100 150 200 V Maximum DC blocking voltageV DC 100 150 200 VMaximum average forward rectified current at T C = 100 °C total device per diodeI F(AV)105APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diodeI FSM 55 ANon-repetitive peak reverse current per diode at t p = 100 µs I RSM 0.2 AElectrostatic discharge capacitor voltage, human body model: C = 250 pF , R = 1.5 k Ω V C 8 kV Operating junction and storage temperature range T J , T STG- 40 to + 150°CIsolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V AC 1500VBYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCTVishay General SemiconductorFor technical questions within your region, please contact one of the following:Document Number: 88549Note:(1) Pulse test: 300 µs pulse width, 1 % duty cycleNote:(1) Automotive grade AEC Q101 qualifiedELECTRICAL CHARACTERISTICS (T C = 25 °C unless otherwise noted)PARAMETERTEST CONDITIONSSYMBOLVALUE UNIT Maximum instantaneous forward voltage per diode (1)I F = 10 A I F = 5 A I F = 5 AT J = 25 °C T J = 25 °C T J = 150 °C V F1.251.100.895 VMaximum reverse current per diode at working peak reverse voltageT J = 25 °C T J = 100 °CI R10 200µAMaximum reverse recovery time per diode I F = 1.0 A, dI/dt = 100 A/µs, V R = 30 V , I rr = 0.1 I RM t rr 25ns Maximum reverse recovery time per diode I F = 0.5 A, I R = 1.0 A, I rr = 0.25 At rr 20ns Maximum stored charge per diode I F = 2 A, dI/dt = 20 A/µs, V R = 30 V , I rr = 0.1 I RMQ rr9nCTHERMAL CHARACTERISTICS (T C = 25°C unless otherwise noted)PARAMETERSYMBOL UG10 UGF10 UGB10UNITBYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient R θJA 505550°C/WTypical thermal resistance per diode, junction to caseR θJC4.56.74.8ORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB BYQ28E-200-E3/45 1.804550/tube T ube ITO-220AB BYQ28EF-200-E3/45 1.954550/tube T ube TO-263AB BYQ28EB-200-E3/45 1.774550/tube T ube TO-263AB BYQ28EB-200-E3/81 1.7781800/reel Tape reel TO-220AB BYQ28E-200HE3/45 (1) 1.804550/tube T ube ITO-220AB BYQ28EF-200HE3/45 (1) 1.954550/tube T ube TO-263AB BYQ28EB-200HE3/45 (1) 1.774550/tube T ube TO-263AB BYQ28EB-200HE3/81 (1)1.7781800/reelTape reelBYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCTVishay General SemiconductorDocument Number: 88549For technical questions within your region, please contact one of the following:RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward SurgeCurrent Per DiodeFigure 3. Typical Instantaneous Forward Characteristics Per DiodeFigure 4. Typical Reverse Characteristics Per DiodeFigure 5. Reverse Switching Characteristics Per DiodeFigure 6. Typical Junction Capacitance Per DiodeBYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCTVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88549PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。