FTA2N60B规格书
FOSAN富信电子 二极管 BAT46W-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT46WSOD-323Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAT46WPin 管脚Mark 打标S9▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 100V Reverse Work Voltage 反向工作电压V RWMDC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )150mA Peak Forward Current 正向峰值电流I FM350mA Power dissipation 耗散功率P D (Ta=25℃)500mW Thermal Resistance J-A 结到环境热阻R θJA 250℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+125℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100µA)V (BR)100—V Reverse Leakage Current 反向漏电流(V R =75V)I R —2µA Forward V oltage(I F =0.1mA)正向电压(I F =10mA)(I F =250mA)V F 0.250.451V Diode Capacitance 二极管电容(V R =1V,f=1MHz)C D—12pFANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT46W ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT46W ■Dimension外形封装尺寸。
FTDI UMFT201XB、UMFT220XB 和 UMFT230XB 数据手册说明书
UMFT201XB, UMFT220XB and UMFT230XB DatasheetVersion 1.2Document Reference No.: FT_000506 Clearance No.: FTDI# 272 Future TechnologyDevices InternationalLtdDatasheetUMFT201XB, UMFT220XB,UMFT230XB BreakoutModulesUSB to I2C/UART/FT1248 breakout modules1IntroductionUMFT201XB, UMFT220XB, and UMFT230XB breakoutmodules utilize FTDI’s FT201XQ, FT220XQ, andFT230XQ chips, respectively, to convert USB to serial or parallel interfaces. . These modules support thefollowing popular interfaces:-UMFT201XB bridges from USB to I2C IC.-UMFT220XB bridges from USB to a user chosen, parallel bit interface, FTDI’s FT1248/SPI. Note: 2out of the 4 I/0 lines are available for this module.-UMFT230XB bridges from USB to UART IC. 1.1FeaturesThis module is a breakout board with a lowprofile. It converts USB2.0 Full-Speed to aserial interface and connects the serialsignals to a 2.54mm (0.1”) pitch 10pinfemale receptacle. The boards do not use aUSB connector, but instead the modulesplug directly into the USB host connectorand the pads of the PCB makes electricalcontact with the electrical contacts of theUSB connector.All serial interfaces on these modulesoperate at +3.3V voltage levels, however allI/Os are 5V tolerant.2Driver SupportRoyalty-Free VIRTUAL COM PORT (VCP) DRIVERS for:∙Windows 8 32,64-bit∙Windows 7 32,64-bit∙Windows Vista∙Windows XP 32,64-bit∙Windows XP Embedded∙Windows 4.2 , 5.0 and 6.0 ∙MAC OS OS-X∙Linux 3.0 and greater∙Android Royalty-Free D2XX Direct Drivers (USB Drivers + DLL S/W Interface):∙Windows 8 32,64-bit∙Windows 7 32,64-bit∙Windows Vista∙Windows XP 32,64-bit∙Windows XP Embedded∙Windows 4.2, 5.0 and 6.0∙MAC OS OS-X∙Linux 3.0 and greater∙AndroidThe drivers listed above are all available to download for free from . Various 3rd Party Drivers are also available for various other operating systems - visit for details.3Ordering InformationTable of Contents1Introduction (1)1.1Features (1)2Driver Support (1)3Ordering Information (2)4Signals and Configurations (4)4.1UMFT-XB Module Pin Outs (4)4.2Signal Descriptions (4)4.3UMFT201XB CN2 Signal Descriptions (5)4.4UMFT220XB CN2 Signal Descriptions (5)4.5UMFT230XB CN2 Signal Descriptions (6)4.6CBUS Signal Options (6)4.7Configuring the MTP ROM (7)5Module Dimensions (8)6IC Package Markings (8)7UMFT-XB-WE Module Wire Connections (9)7.1UMFT201XB-WE Wire Connections (9)7.2UMFT220XB-WE Wire Connections (10)7.3UMFT230XB-WE Wire Connections (10)8Module Circuit Schematics (11)8.1UMFT201XB Schematic (11)8.2UMFT220XB Schematic (11)8.3UMFT230XB Schematic (12)9Environmental Compliances (12)10Internal MTP ROM Configuration (13)11Contact Information (14)Appendix A - List of Figures and Tables (15)Appendix B: Revision History (16)4 Signals and ConfigurationsFor all three modules, CN1 connects directly to a USB host or HUB port, or can be connected to a USB extension cable. This connects the USB data signals, 5V USB Bus power and GND. When connecting these modules to a USB host or HUB the USB signal pads should be facing upwards, and when connecting to vertical connector the USB signal pad should be facing right. If the module is plugged in the wrong way, no contact will be made between PCB and HUB, no damage will occur from plugging the module in upside down.4.1UMFT-XB Module Pin Outs4.2 Signal Descriptions4.3UMFT201XB CN2 Signal Descriptions4.4UMFT220XB CN2 Signal Descriptions4.5UMFT230XB CN2 Signal Descriptions4.6CBUS Signal OptionsFor further information on CBUS options, please refer to the relevant x-chip datasheet.* PWREN# must be used with a 10kΩ resistor pull up.**When in USB suspend mode the outputs clocks are also suspended.***The number of CBUS pins available varies for the three different modules.4.7Configuring the MTP ROMThe IC on each of the modules contains an embedded MTP memory that can be used to specify the functions of the CBUS pins, the current drive on each signal pin, current limit for the USB bus and the descriptors of the device. For details on using the MTP ROM/EEPROM programming utility FT_PROG, please see the FT_PROG User Guide.When programming the MT memory please note:i)The Max Bus Power setting of the MTP ROM should specify the maximum current to be drawn fromthe USB host/hub when enumerated. For high-powered USB devices the current limit whenenumerated is between 100mA and 500mA, for low-powered USB devices the current limit is100mA.5Module DimensionsTolerance +/-0.1mm2.3Figure 5.1 UMFT-XB Module DimensionsThe UMFT201XB, UMFT220XB and UMFT230XB modules are mechanically identical. Figure 5.1 Uses UMFT230 to illustrate the mechanical details.6IC Package MarkingsThe date code format is YYXX where XX = 2 digit week number, YY = 2 digit year number. This is followed by the revision letter.The code XXXXXXX is the manufacturing LOT code.FTDIXXXXXXXXXXFT201XQ 51YYWW-D8127UMFT-XB-WE Module Wire Connections7.1 UMFT201XB-WE Wire ConnectionsBLACKBROWN RED ORANGE YELLOW GREEN GREY PURPLE BLUE WHITEFigure 7.1 UMFT201XB-WE Wire Connections (numbers refer to pad numbers on the PCB)Figure 6.1 illustrates the –WE product as a cable. This is only for illustration purposes. The wire ended product consists of individual wires – not a cable7.2 UMFT220XB-WE Wire ConnectionsBLACKBROWN RED ORANGE YELLOW GREEN GREY PURPLE BLUE WHITEFigure 7.2 UMFT220XB-WE Wire Connections (numbers refer to pad numbers on the PCB)Figure 6.2 illustrates the –WE product as a cable. This is only for illustration purposes. The wire ended product consists of individual wires – not a cable7.3UMFT230XB-WE Wire ConnectionsBLACKBROWN RED ORANGE YELLOW GREEN GREY PURPLE BLUE WHITEFigure 7.3 UMFT230XB-WE Wire Connections (numbers refer to pad numbers on the PCB)Figure 6.3 illustrates the –WE product as a cable. This is only for illustration purposes. The wire ended product consists of individual wires – not a cable8Module Circuit Schematics 8.1UMFT201XB SchematicFigure 8.1 UMFT201XB Circuit Schematic8.2UMFT220XB SchematicFigure 8.2 UMFT220XB Circuit Schematic8.3UMFT230XB SchematicFigure 8.3 UMFT230XB Circuit Schematic9Environmental CompliancesThe UMFT-XB modules exclusively use lead free components, and are fully compliant with European Union directive 2002/95/EC.10Internal MTP ROM ConfigurationFollowing a power-on reset or a USB reset the FT-X chips will scan its internal MTP ROM and read the USB configuration descriptors stored there. The default values programmed into the internal MTP ROM in the FT201/220/230XB modules is shown in Table 10.1.The internal MTP ROM in the FT-X chip can be programmed over USB using the utility program FT_PROG. FT_PROG can be downloaded from the . Users who do not have their own USB vendor ID but who would like to use a unique Product ID in their design can apply to FTDI for a free block of unique PIDs. Contact FTDI Support(*********************)forthisservice.11Contact InformationHead Office – Glasgow, UKUnit 1, 2 Seaward Place, Centurion Business Park Glasgow G41 1HHUnited KingdomTel: +44 (0) 141 429 2777Fax: +44 (0) 141 429 2758E-mail (Sales) *******************E-mail (Support) *********************E-mail (General Enquiries) ******************* Branch Office – Taipei, Taiwan2F, No. 516, Sec. 1, NeiHu RoadTaipei 114Taiwan , R.O.C.Tel: +886 (0) 2 8797 1330Fax: +886 (0) 2 8751 9737E-mail (Sales) **********************E-mail (Support) ************************ E-mail (General Enquiries) **********************Branch Office – Hillsboro, Oregon, USA 7130 SW Fir LoopTigard, OR 97223USATel: +1 (503) 547 0988Fax: +1 (503) 547 0987E-Mail (Sales) *********************E-Mail (Support) *********************** E-Mail (General Enquiries) *********************Branch Office – Shanghai, ChinaRoom 1103, No. 666 West Huaihai Road, Shanghai, 200052ChinaTel: +86 (0)21 6235 1596Fax: +86 (0)21 6235 1595E-mail (Sales) *********************E-mail (Support) *********************** E-mail (General Enquiries) *********************Web SiteDistributor and Sales RepresentativesPlease visit the Sales Network page of the FTDI Web site for the contact details of our distributor(s) and sales representative(s) in your country.System and equipment manufacturers and designers are responsible to ensure that their systems, and any Future Technology Devices International Ltd (FTDI) devices incorporated in their systems, meet all applicable safety, regulatory and system-level performance requirements. All application-related information in this document (including application descriptions, suggested FTDI devices and other materials) is provided for reference only. While FTDI has taken care to assure it is accurate, this information is subject to customer confirmation, and FTDI disclaims all liability for system designs and for any applications assistance provided by FTDI. Use of FTDI devices in life support and/or safety applications is entirely at the u ser’s risk, and the user agrees to defend, indemnify and hold harmless FTDI from any and all damages, claims, suits or expense resulting from such use. This document is subject to change without notice. No freedom to use patents or other intellectual property rights is implied by the publication of this document. Neither the whole nor any part of the information contained in, or the product described in this document, may be adapted or reproduced in any material or electronic form without the prior written consent of the copyright holder. Future Technology Devices International Ltd, Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow G41 1HH, United Kingdom. Scotland Registered Company Number: SC136640Appendix A - List of Figures and TablesList of FiguresFigure 5.1 UMFT-XB Module Dimensions (8)Figure 7.1 UMFT201XB-WE Wire Connections (numbers refer to pad numbers on the PCB) (9)Figure 7.2 UMFT220XB-WE Wire Connections (numbers refer to pad numbers on the PCB) (10)Figure 7.3 UMFT230XB-WE Wire Connections (numbers refer to pad numbers on the PCB) (10)Figure 8.1 UMFT201XB Circuit Schematic (11)Figure 8.2 UMFT220XB Circuit Schematic (11)Figure 8.3 UMFT230XB Circuit Schematic (12)List of TablesTable 4.1 Module PinOut List (4)Table 4.2 CN1 PinOut Description (4)Table 4.3 I2C Module Pin Out Description (5)Table 4.4 FT1248 Module Pin Out Description (5)Table 4.5 UART Module Pin Out Description (6)Table 4.6 CBUS Configuration Control (7)Table 10.1 Default Internal MTP ROM Configuration (13)Appendix B: Revision HistoryDocument Title: UMFT201XB, UMFT220XB and UMFT230XBDocument Reference No.: FT_000506Clearance No.: FTDI# 272Product Page: /FT-X.htmDocument Feedback: Send FeedbackVersion 1.0 Initial Datasheet Created 09/02/12 Version 1.1 Updated Photos and added Window 8 to driver support list 31/01/13 Version 1.2 Updated -01 part number 03/07/2015。
DTL2N60规格书最新版
FEATURES•Halogen-free According to IEC 61249-2-21Definition•Dynamic dV/dt Rating•Repetitive Avalanche Rated •Available in Tape and Reel •Fast Switching •Ease of Paralleling•Compliant to RoHS Directive 2002/95/ECNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 37 mH, R g = 25 Ω, I AS = 2.0 A (see fig. 12).c.I SD ≤ 2.0 A, dI/dt ≤ 40 A/μs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.e.When mounted on 1" square PCB (FR-4 or G-10 material).PRODUCT SUMMARYV DS (V)600R DS(on) (Ω)V GS = 10 V3.9Q g (Max.) (nC)18Q gs (nC) 3.0Q gd (nC)8.9ConfigurationSingle ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARAMETER SYMB O L LIMIT UNIT Drain-Source Voltage V DS 600V Gate-Source Voltage V GS±20Continuous Drain Current V GS at 10 V T C = 25 °CI D2.0A T C = 100 °C1.3Pulsed Drain Current a I DM 8.0Linear Derating Factor0.33W/°C Linear Derating Factor (PCB Mount)e0.020Single Pulse Avalanche Energy bE AS 74mJ Repetitive Avalanche Current a I AR 2.0 A Repetitive Avalanche Energya E AR 4.2mJ Maximum Power DissipationT C = 25 °C P D42W Maximum Power Dissipation (PCB Mount)e T A = 25 °C 2.5Peak Diode Recovery dV/dt c dV/dt 3.0V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150°CSoldering Recommendations (Peak Temperature)for 10 s 260d*Pb containing terminations are not RoHS compliant, exemptions may apply２３５５３Ｑ６８８７２黄Ｒ１３７６０３２电５０７０Notea.When mounted on 1" square PCB (FR-4 or G-10 material).Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETERSYMB O LMIN.TYP.MAX.UNITMaximum Junction-to-Ambient R thJA --110°C/W Maximum Junction-to-Ambient(PCB Mount)aR thJA --50Maximum Junction-to-Case (Drain)R thJC-- 3.0TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time WaveformsFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitFig. 14 - For N-ChannelTO-252AA (HIGH VOLTAGE)MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.E 6.40 6.730.2520.265L 1.40 1.770.0550.070L1 2.743 REF0.108 REFL20.508 BSC0.020 BSCL30.89 1.270.0350.050L40.64 1.010.0250.040D 6.00 6.220.2360.245H9.4010.400.3700.409b0.640.880.0250.035b20.77 1.140.0300.045b3 5.21 5.460.2050.215e 2.286 BSC0.090 BSCA 2.20 2.380.0870.094A10.000.130.0000.005c0.450.600.0180.024c20.450.580.0180.023D1 5.30-0.209-E1 4.40-0.173-θ0'10'0'10'ECN: S-81965-Rev. A, 15-Sep-08DWG: 5973Notes1.Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.2.Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, butincluding any mismatch between the top and bottom of the plastic body.3.The package top may be smaller than the package bottom.4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximummaterial condition. The dambar cannot be located on the lower radius of the foot.TO-251AA (HIGH VOLTAGE)MILLIMETERS INCHES MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.DIM.MIN.MAX.MIN.MAX.A 2.18 2.390.0860.094D1 5.21-0.205-A10.89 1.140.0350.045E 6.35 6.730.2500.265 b0.640.890.0250.035E1 4.32-0.170-b10.650.790.0260.031e 2.29 BSC 2.29 BSC b20.76 1.140.0300.045L8.899.650.3500.380 b30.76 1.040.0300.041L1 1.91 2.290.0750.090 b4 4.95 5.460.1950.215L20.89 1.270.0350.050 c0.460.610.0180.024L3 1.14 1.520.0450.060 c10.410.560.0160.022θ10'15'0'15' c20.460.860.0180.034θ225'35'25'35'D 5.97 6.220.2350.245ECN: S-82111-Rev. A, 15-Sep-08DWG: 5968Notes1.Dimensioning and tolerancing per ASME Y14.5M-1994.2.Dimension are shown in inches and millimeters.3.Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at theoutermost extremes of the plastic body.4.Thermal pad contour optional with dimensions b4, L2, E1 and D1.5.Lead dimension uncontrolled in L3.6.Dimension b1, b3 and c1 apply to base metal only.7.Outline conforms to JEDEC outline TO-251AA.A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK (TO-252)。
2N60 产品资料 2N60 产品资料
2、性能指标
极限值：（除其他标注外Tamb= 25℃）
参数
符号
数值
单位
最大漏源电压 栅源电压 雪崩电流 最大持续漏电流 最大脉冲漏电流
VDSS
600
V
VGS
±30
V
IAR
2
A
ID
2
A
(注1)
IDM
8
A
雪崩能量（单脉冲）
(注2)
EAR
140
mJ
峰值二极管恢复dv/dt
(注3)
dv/dt
4.5
V/ns
最大耗散功率 工作结温/储存温度范围
7-1
2N60 产品资料
功率MOSEFT—2N60 2A，600V N沟道
2N60功率MOS场效应管采用先进的高压DMOS工艺技术。这种先进工艺使器件具有优良的特性，如极快 的开关速度，极低栅电荷，最小化的导通电阻以及极强的雪崩击穿特性。这种器件非常适合于高效开关电源， DC/DC转换器，PWM马达控制和桥式驱动电路等。
注释:
⑴ 重复范围: 脉冲宽度受结温限制
⑵ L = 64mH, IAS = 2A, VDD = 50V, RG = 25 Ω, 开始TJ = 25°C ⑶ ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, 开始 TJ = 25°C
⑷ 脉冲测试: 脉冲宽度<= 300us, 占空比<=2%
25 60 ns
20 50
下降时间
tf
25 60
栅电荷 栅-源电荷 栅-漏电荷
Qg VDS =480V；VGS =10V；ID=2.4A (注4, 注5)
9 11
1.6
2N60中文资料
UNISONIC TECHNOLOGIES CO., LTD2N60 Power MOSFET2 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* R DS(ON) = 3.8Ω@V GS = 10V.* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 2N60LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube 2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube 2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube 2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel 2N60-TN3-T 2N60L-TN3-T TO-252 G D S TubeNote: Pin Assignment: G: Gate D: Drain S: SourceABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 2.0 AT C = 25°C 2.0 ADrain Current ContinuousT C = 100°C I D 1.26 ADrain Current Pulsed (Note 2) I DP 8.0 ARepetitive(Note 2) E AR 4.5 mJAvalanche EnergySingle Pulse(Note 3) E AS 140 mJPeak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/nsT C = 25°C 45 WTotal Power Dissipation Derate above 25°C P D0.36 W/Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, I AS =2.0A, V DD =50V, R G =25 Ω, Starting T J = 25°C 4. I SD ≤ 2.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°CTHERMAL DATAPARAMETER PACKAGE SYMBOL RATINGS UNITTO-251 112 TO-252 112TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA54TO-251 12 TO-252 12TO-220 4 Thermal Resistance Junction-Case TO-220F θJc4/WELECTRICAL CHARACTERISTICS (T J =25℃, unless Otherwise specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 600 VV DS = 600V, V GS = 0V 10 µAZero Gate Voltage Drain Current I DSSV DS = 480V, T C = 125°C100µA Forward V GS = 30V, V DS = 0V 100nAGate-Body Leakage Current Reverse I GSSV GS = -30V, V DS = 0V-100nA Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 250 µA 0.4 V/On Characteristics Gate Threshold Voltage V GS(TH)V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON)V GS = 10V, I D =1A 3.8 5 Ω Forward Transconductance g FS V DS = 50V, I D = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance C ISS 270 350pFOutput Capacitance C OSS 40 50 pFReverse Transfer Capacitance C RSS V DS =25V, V GS =0V, f =1MHz 5 7 pFELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSwitching Characteristics Turn-On Delay Time t D (ON) 10 30 ns Rise Time t R 25 60 ns Turn-Off Delay Time t D(OFF) 20 50 nsFall Time t FV DD =300V, I D =2.4A, R G =25Ω(Note 1,2) 25 60 ns Total Gate Charge Q G 9.0 11 nCGate-Source Charge Q GS 1.6 nCGate-Drain Charge Q GDV DS =480V, V GS =10V, I D =2.4A(Note 1, 2)4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 2.0 A 1.4V Continuous Drain-Source Current I SD 2.0 A Pulsed Drain-Source Current I SM 8.0 AReverse Recovery Time t RR 180 nsReverse Recovery Charge Q RR V GS = 0 V, I SD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%2. Essentially Independent of Operating TemperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS10010101010-1100Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )10102Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics46810On-Region Characteristics0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) ()Drain Current , I D (A)122481012On-Resistance Variation vs . Drain Current andGate Voltage634560.2Source-Drain Voltage , V SD (V)Body Diode Forward Voltage Variation vs.Source Current and Temperature 1.60.40.60.8 1.0 1.2 1.4500010Drain -Source Voltage, V DS (V)C a p a c i t a n c e (p F )Capacitance vs. Drain-Source Voltage4001001001013002000G a t e -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)261081012Gate Charge vs. Gate Charge Voltage46408TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d ow n V o l t a g e , V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage vs . Temperature 0-100D r a i n -S o u r c e O n -R e s i st a n c e , R D S (O N ) (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150On-Resistance vs . Temperature101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )Max. Safe Operating Area 1010101010D r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)75100150Max. Drain Current vs. Case Temperature 0.012550250.51.01.52.0Square Wave Pulse Duration , t1(s)T h e r m a l R e s p o n s e , J C (t )Thermal Response101010101010101010。
lnb65faemc规格书
lnb65faemc规格书全文共四篇示例，供您参考第一篇示例：一、产品概述【lnb65faemc规格书】所描述的产品是一种________（产品名称），主要用于________（主要用途）。
该产品采用了先进的________技术，具有________特点，广泛适用于________领域。
它的发展历程________，在市场上取得了________的成绩，受到了广泛好评。
二、技术参数1. 外观尺寸：产品的长宽高分别为______mm × ______mm ×______mm，重量为______kg。
2. 电源要求：工作电压为______V，工作电流为______A，功率消耗为______W。
3. 性能参数：________（列举相关性能参数）。
4. 工作温度范围：______℃至______℃。
5. 存储温度范围：______℃至______℃。
6. 通信接口：________（列举通信接口类型）。
7. 其他重要参数：________。
三、功能特性1. ________功能：______（介绍功能特性）。
2. ________功能：______（介绍功能特性）。
3. ________功能：______（介绍功能特性）。
4. ________功能：______（介绍功能特性）。
5. ________功能：______（介绍功能特性）。
四、使用方法1. ________步骤：______（详细描述使用方法）。
2. ________步骤：______（详细描述使用方法）。
3. ________步骤：______（详细描述使用方法）。
4. ________步骤：______（详细描述使用方法）。
5. ________步骤：______（详细描述使用方法）。
五、注意事项1. 在使用过程中，请注意______（列举注意事项）。
2. 请使用标准电源适配器。
3. 请勿拆卸产品外壳，以免影响产品性能和安全。
MX620B芯片手册中文版
概述该产品为电池供电的玩具、低压或者电池供电的运动控制应用提供了一种集成的有刷直流马达驱动解决方案。
电路内部集成了采用N沟和P沟功率MOSFET设计的H桥驱动电路，适合于驱动有刷直流马达或者驱动步进马达的一个绕组。
该电路具备较宽的工作电压范围（从2V到9.6V），最大持续输出电流达到2A，最大峰值输出电流达到 3.5A。
该驱动电路内置过热保护电路。
通过驱动电路的负载电流远大于电路的最大持续电流时，受封装散热能力限制，电路内部芯片的结温将会迅速升高，一旦超过设定值(典型值150℃)，内部电路将立即关断输出功率管，切断负载电流，避免温度持续升高造成塑料封装冒烟、起火等安全隐患。
内置的温度迟滞电路，确保电路恢复到安全温度后，才允许重新对电路进行控制。
该驱动电路内置限流保护电路。
当流过功率管的电流超过设定值时，内部电路限流保护电路启动，功率管最大输出电流将被限制在设定值。
该功能可确保电路输出端口与地短路、输出端口之间短路时，电路不烧毁。
特性●低待机电流(小于0.1uA)；●低静态工作电流；●集成的H桥驱动电路；●内置防共态导通电路；●低导通内阻的功率MOSFET管；●内置带迟滞效应的过热保护电路(TSD)；●内置限流保护电路，输出对地短路，输出与输出短路，不烧电路；●抗静电等级：3KV(HBM)。
典型应用●2-6节AA/AAA干电池供电的玩具马达驱动；●2-6节镍-氢/镍-镉充电电池供电的玩具马达驱动；●1-2节锂电池供电的马达驱动订购信息应用说明1、基本工作模式a)待机模式在待机模式下，INA=INB=L。
包括驱动功率管在内的所有内部电路都处于关断状态。
电路消耗极低极低的电流。
此时马达输出端OUTA和OUTB 都为高阻状态。
b)正转模式正转模式的定义为：INA=H，INB=L，此时马达驱动端OUTA输出高电平，马达驱动端OUTB输出低电平时，马达驱动电流从OUTA流入马达，从OUTB流到地端，此时马达的转动定义为正转模式。
FOSAN富信电子 二级管 PESD1CAN-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.PESD1CAN SOT-23ESD静电保护二极管▉Features特点Bidirectional ESD Protection双向静电保护▉Applications应用Portable electronics便携式电子产品Control&monitoring systems控制与监视系统Cellular handsets and accessories蜂窝手机及附件Servers,notebooks,and desktop PCs bus protection服务器、笔记本及台式机总线保护▉Device Marking产品打标▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位ESD(IEC61000-4-2contact discharge)@25℃接触放电V ESD+30KV ESD(IEC61000-4-2air discharge)@25℃空气放电V ESD+30KV Peak Pulse Current@25℃峰值脉冲电流I PP8A Peak Pulse Power@25℃峰值脉冲功率P PK450W Lead Temperature管脚温度T L260℃Lead Solder Time管脚焊接时间T L10S Operating Temperature工作温度T op-40~125℃Junction Temperature结温T J-55~150℃Storage Temperature储存温度T stg-55~150℃ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.PESD1CAN ▉Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic Parameters 特性参数Symbol符号Min最小值Typ典型值Max最大值Unit单位Condition条件Reverse Stand-off Voltage反向工作电压V RWM24VReverse Breakdown Voltage反向击穿电压V R(BR)26.528V I T=1mA Reverse Leakage Current反向漏电流I R1µA V RWM=24V Clamping Voltage钳位电压V C36V I PP=1A,tp=8/20µs Clamping Voltage钳位电压V C48V I PP=8A,tp=8/20µs Junction Capacitance结电容C J30pF V R=0V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.PESD1CAN ■Typical Characteristic Curve典型特性曲线■Typical Application典型应用ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.PESD1CAN▉Dimension外形封裝尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
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Absolute Maximum Ratings
Symbol VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL TJ and TSTG Parameter Drain-to-Source Voltage
[1]
TC=25℃ unless otherwise specified
FTP02N60B 600 1.9
FTA02N60B
Unit V
Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=45mH, ID=1.8A Peak Diode Recovery dv/dt[3] Soldering Temperature Distance of 1.6mm from case for 10 seconds Operating and Storage Temperature Range
ARK Microelectronics Co., Ltd.
1/11
Rev. 2.1 May. 2012
FTP02N60B/FTA02N60B
Source-Drain Diode Characteristics
Symbol ISD ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Maximum Pulsed Current(Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min -----Typ. ---133 410 Max. 1.9 7.6 1.2 --TC=25℃ unless otherwise specified
[2]
1.9* Figure 3 Figure 6 A
50 0.40 ± 30 73 4.5 300 -55 to 150
20 0.16
W W/℃ V mJ V/ns ℃
*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
5/11
Rev. 2.1 May. 2012
FTP02N60B/FTA02N60B
ARK Microelectronics Co., Ltd.
10/11
Rev. 2.1 May. 2012
RDS(ON), Drain-to-Source Resistance
2.2 2.0 1.8
(Normalized)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 T J , Junction Temperature (℃) 125 150
FTP02N60B FTP02N60BG FTA02N60B FTA02N60BG
Package
TO-220 TO-220 TO-220F TON60B FTP02N60BG FTA02N60B FTA02N60BG
Remark
RoHS Halogen-free RoHS Halogen-free
FTP02N60B/FTA02N60B
600V N-Channel MOSFET
General Features
Low ON Resistance Low Gate Charge (typical 7.4nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Halogen-free available
Units A A V ns nC
Test Conditions Integral P-N diode in MOSFET IS=1.9A, VGS=0V VGS=0V IF=1.9A,di/dt=100A/µs
NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] ISD=1.9A, di/dt≤100A/µs, VDD≤BVDSS, TJ=+150℃ [4] Pulse width≤380µs; duty cycle≤2%.
ARK Microelectronics Co., Ltd.
3/11
Rev. 2.1 May. 2012
FTP02N60B/FTA02N60B
2.4
Figure 10. Typical Drain-to-Source On Resistance vs. Junction Temperature
BVDSS 600V
RDS(ON) (Max.) 5.5Ω
ID 1.9A
Applications
High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power
Ordering Information
Part Number