ULN2003L达林顿晶体管阵列数据手册

ULN2003
L I NEAR I NTEGRATED CI RCUI T
HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
The
ULN2003is a monolithic high voltage and high current
Darlington transistor arrays.It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode clamp diode for switching inductive loads.The collector-current rating of a single darlington pair is 500mA.The darlington pairs may be parrlleled for higher current capability.Applications include relay drivers,hammer drivers,lampdrivers,display drivers(LED gas discharge),line drivers,and logic buffers.
The ULN2003has a 2.7k Ωseries base resistor for each darlington pair for operation directly with TTL or 5V CMOS devices.
FEATURES
*500mA rated collector current(Single output)*High-voltage outputs:50V
*Inputs compatibale with various types of logic.*Relay driver application
DIP-16
1B 2B 3B 4B 5B 6B 7B E
1C 2C
3C
4C 5C 6C
7C COM
C
ULN2003
L I NEAR I NTEGRATED CI RCUI T
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Symbol
Value
Unit
Colletor-Emitter Voltage V CE 50V Input Voltage
V I 30A Peak Collector Current Io 500mA Total Emitter-terminal I OK 500mA Power Dissipation Pd 950Tamb=25°C 495Tamb<85°C
mW mW Operating Temperature Topr -20~+85°C Storage Temperature
Tstg
-65~+150
°C
Note:All volatge values are with repect to the emitter/substrate terminal E,unless otherwise noted.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
Characteristic
Test Figure
Symbol Test Conditions
Min Typ Max
Units
V CE =2V,Ic=200mA
2.4V CE =2V,Ic=250mA 2.7On-state Input Voltage 6
V I(ON)V CE =2V,Ic=300mA
3
V
I I =250µA,Ic=100mA
0.9 1.1I I =350µA,Ic=200mA
1 1.3Collector-Emitter Saturation
Voltage
5
V CE(SAT)I I =500µA,Ic=350mA
1.2
1.6V
1V CE =50V,I I =0
50Collector Cutoff Current 2I CEX V CE =50V,I I =0,Ta=70°C 100
µA Clamp Forward Voltage 8V F I F =350mA
1.72
V Off-state Input Current
3I I (OFF)V CE =50V,I C =500mA,Ta=70°C 50
65µA
Input Current 4I I V I =3.85V 0.95
1.35mA V R =50V
50Clamp Reverse Current 7I R V R =50V,Ta=70°C 100
µA Input Capacitance --C I V I =0,f=1MHz
1525pF Propagation delay time,low-to-high-level output 9t PLH 0.251µs Propagation delay time,high-to-low-level output 9t PHL 0.25
1
µs High-level output Voltage after
switching
10
V OH
Vs=50V,Io=300mA
Vs-20
mV
ULN2003
L I NEAR I NTEGRATED CI RCUI T
TEST CIRCUITS
Figure 1ICEX Test Circuit Figure 2ICEX Test Circuit
Figure 3II(off)Test Circuit Figure 4II(on)Test Circuit
Note:II is fixed for measuring VCE(sat),variable for measuring HFE.
Figure 5HFE,VCE(sat)Test Circuit
Figure 6VI(on)Test Circuit
ULN2003
L I NEAR I NTEGRATED CI RCUI T
F
Figure 7
IR Test Circuit Figure 8VF Test Circuit
INPUT Figure 9.Propagation Delay Time Waveforms
Input Note:A.The Pulse generatoe has the following characteristics:PRR=12.5kHz,Zo=50Ω
B.CL includes proble and jig capacitance.
Figure tch-up Test Circuit and Voltage Waveforms
ULN2003
L I NEAR I NTEGRATED CI RCUI T
TYPICAL PERFORMANCE CHARACTERISTICS
0.51.0
1.5
2.0
2.5
Collector-Emitter saturation Voltage
vs.Collector Current
C o l l e c t o r -E m i t t e r s a t u r a t i o n V o l t a g e ,V C E (s a t )(V )
Collector-Emitter saturation Voltage
vs.Total Collector Current Input Current,Ii(µA)0
100200
300400
500
C o l l e c t o r C u r r e n t ,I c (m A )
Duty Cycle,(%)
ULN2003
L I NEAR I NTEGRATED CI RCUI T
TYPICAL APPLICATION CIRCUIT
V
Lamp test
TTL to Load
V
Use of pullup Resistor to increase drive Current
This datasheet has been downloaded from: Datasheets for electronic components.。