RTC64613A英语资料

-55-+85 -55-+125
Temperature: 260'C or less
RTC·64611 (Lead part)
Soldering conditions
Tsol.
Time: 10 sec.
RTC·646 I3
0.3V for SOns pulse width
Under 260'C within 1Osee x 2 or under 230'C within 3 min.
11/01 '99 MON 10:47 FAX 49 89 14005 110
EPSON EUROPE ELECTRONICS
I4i 007
4
RTC-64611/64613
Fig.1 Low Voltage Data holding Wave Form
Voo
Fig.2 Oscillation start time of Timing Wave Form
V V
"A "A
-
-
"A V V
pF pF
V"
VOL
2.4
0.4 12.5 12.5 2.0
=2.1mA
Input capacity
Output capacity
C"
CONT
100
V" OV Ta =25·C f =1.0MHz
No load. min. cycle
-
-
-
Current consumption (at bus access)
Symbol
Measuring conditions
VoD =5V±10%
Vno =2V
MIN
MAX
MIN
Vo[)-O.2
MAX
Unit
V" V"
I"
--
ITSL
ILQH
----1 = -lmA 011
10L
2.2 -0.3
-
v"
0.8 ± 2 ±1O ±1O
v"
0.2 ± 2 ±10 ±1O
-
-0.3
*Alloweble value for GND. * *
2 Operating range
Item
Supply voltage
Symbol
Condition
Range
4.5-5.5 -20-+ 75
Unit
V DD
Ta=-20-+75'C VDD -4.5-5.5V
V 'C
Operating temperature
@ I/O timing reference level: 1.5V
@ Output load: 1 TIL gate+C, (100pF) (including the scope and jig capacity)
(2) Read cycle
Read cycle
Read cycle time
Symbol
TOPR
3. Frequency characteristics
Item
Condition
,
.."Range
+15/- 5 (5±10) Ta=25'C
Voll =5V
Unit
RTC·64611A
Frequency tolerance
RTC·64611 B RTC·64613A RTC-64613
+55/ -45 (5±50) +25/-15 (5±20) +55/ -45 (5±50) +10/-120 +10/ -220 ± 5 ± 5
I4i 009
RTC-64611/64613
cr>
Read cycle·3 timing wave form
* 1, and * 4
,~
!
-...,
lACS
tCHZ
telz
,
XXX
f\.
Data Valid
f--
'5
* 1. In read cycle, keep WE "High". * 2. The device is always selected in CS=V * 3. The address must be defined simultaneously with or before activation of es. * 4. OE=V * 5. During read, read data varies as the contents of the register change.
I" I"
tAcs
MIN
MAX
Unit
ns ns ns ns ns ns ns ns ns
85
85 45 45 -
Address access time
Chip select access time Output enable access time Output hold time Chip select/output set time
CS control
Fig.3 IRQ Control Timing
Fig.4 H·START/STOP Control Timing
H·STAAT (STOP
Internal counter
Stop
t
HSO
Fig.5 RESET Control Timing
.~
t HSO
Fig.6 AOJ Control Timing
-----:'""',...,,1
Data holding mode
t,
2.2V VOA;<;:2.0V Voo
4.5V
CS_o~
Note:
~S=~D~-~.:.V
_
Osciliation
+-__
~'-"LI.!-"I...l.L.l.L.l.!...l.L..
_
the address buffer, data buffer, WE buffer, and DE buffer. When the battery backup mode 1s controlled, the VIN level (address. data, and WE and DE) may be at a high impedance.
11/01 '99 MON 10: 45 FAX 49 89 14005 110
EPSON EUROPE ELECTRONICS
I4i 001
REAL TIME CLOCK MODULE
RTC-64611/64613 . ~ , APPLICATION MANUAL
EPSON
•
11/01
'99
MON 10:46 FAX 49 89 14005 110
2.0
-
4.5 2.0
V I'A ns ns
Data holding current consumption
vD ,=2.0, CSil; 1.8V H.START/STOPil; i.8V
IRQ with 1 MHz kept open.
0 85 (t,d
Chip select data hold time Operation recovery time
Ta=25"C, V =4.S-5.5V DD
PPM/V
4. Data holding characteristics at low supply voltages
Item
Data holding voltage
Symbol
Condition
MIN
TYP
MAX
Un"
V, D
IDDDR
CS!itV DD -O.2V
I,
--
0.5-+7.0
V V mA mA 'C
-1 1
-0.5*
* . . . .V
5 50
DD
+O.3
Allowable output current
Total allowable output current
Storage
1 :l:1,
--VOD=OV
temperature
I I
RTC·64611 RTC·64613
TCDR
T,
See Fig. 1.
-
-
Unit sec
psec
Note: tRc· .. ·.. Read cycle time
5. Oscillation characteristics and control signal timing
Rem
Crystal oscillation start time IRQ release time H.START/STOP control delay time
-
mA
-4-
11/01 '99 MON 10:48 FAX 49 89 14005 110
EPSON EUROPE ELECTRONICS
I4i 008
EPSON
7. AC characteristics (Unless otherwise specified,) (I) AC characteristics measuring conditions (applicable to the read and write cycies) CD Input pulse level: O.B-2AV ® Input rise/fall time: 5 ns