五矿地产净利润同比增长20.6%将推进项目快速开发销售：五矿信托净利润
Q Sepharose Fast Flow 产品说明书
Q1126pis Rev 01/221Product InformationQ Sepharose ® Fast FlowQ1126Product DescriptionQ Sepharose ® Fast Flow is an ion exchangechromatography resin with a quaternary amine (Q) functional group [-CH 2-N +(CH 3)3] attached to Sepharose ® Fast Flow. The Q group serves as astrong anion exchanger, which is completely ionized over a broad pH range. The terms “s trong" and"weak" in ion exchange chromatography refer to the extent of ionization with pH, and not to the binding strength of the functional group to the target species. The parent Sepharose ® Fast Flow is a cross-linked derivative of Sepharose ®. The particle size range is 45-165 µm. The average bead diameter is ~90 µm. The counterion in the product is sulfate (SO 4-2). Recommended cation buffers to use with Q Sepharose ® Fast Flow include alkylamines,ammonium, ethylenediamine, imidazole, pyridine, or Tris. In terms of pH, it is suggested to operate within 0.5 pH unit of the buffer's pK a . With proteins, it is suggested to operate at least 1 pH unit above the pI of the protein, to facilitate binding. Oxidizing agents, and anionic detergents and buffers, should not be used with Q Sepharose ® Fast Flow. Likewise,extended exposure of Q1126 to pH < 4 should be avoided. Several publications 1,2 and dissertations 3-5 cite use of product Q1126 in their research.ReagentQ Sepharose ® Fast Flow is offered as a suspension in 20% ethanol.Approximate Exclusion Limit: average molecular mass of ~4 × 106 DaltonsIonic Capacity: 0.18-0.24 mmol Cl -/mL gel Binding Capacity: ~42 mg BSA per mL gel pH Stability: 2-12Working temperature: 4-40 °CPrecautions and DisclaimerFor R&D use only. Not for drug, household, or other uses. Please consult the Safety Data Sheet for information regarding hazards and safe handling practices. General Resin Preparation Procedure1. Allow the ion exchange medium and ~10 columnvolumes (CV) of buffer to equilibrate to thetemperature chosen for the chromatographic run. 2. Mix the pre-swollen suspension with startingbuffer to form a moderately thick slurry, which consists of ~75% settled gel and 25% liquid. 3. Degas the gel under vacuum at the temperatureof column operation.4. Mount the column vertically on a suitable stand,out of the way of direct sunlight or drafts, which may cause temperature fluctuations.5. Pour a small amount of buffer into the emptycolumn. Allow the buffer to flow through spaces to eliminate air pockets.6. Pour the suspension of ion exchange mediumprepared in Step 3 into the column by allowing it to flow gently down the side of the tube, to avoid bubble formation.7. For consistent flow rates and reproducibleseparations, connect a pump to the column. 8. Fill the remainder of the column to the top withbuffer. Allow ~5 CV of buffer to drain through the bed at a flow rate at least 133% of the flow rate to be used in the procedure. The bed height should have settled to a constant height.9. Using a syringe or similar instrument, apply thesample dissolved in starting buffer to the column. For isocratic separations, the sample volumeshould range from 1-5% of the column volume. If the chromatographic run involves elution with a gradient, the applied sample mass is of much greater importance than the sample volume, and the sample should be applied in a low ionicstrength medium. Ion exchange is used both to concentrate and to fractionate the sample. 10. Elution:• If only unwanted substances in the sample areadsorbed, or if sample components aredifferentially retarded under isocratic conditions, the starting buffer can also be used as the eluent.The life science business of Merck operates as MilliporeSigma in the U.S. and Canada.Merck and Sigma-Aldrich are trademarks of Merck KGaA, Darmstadt, Germany or its affiliates. All other trademarks are the property of their respective owners. Detailed information on trademarks is available via publicly accessible resources.© 2022 Merck KGaA, Darmstadt, Germany and/or its affiliates. All Rights Reserved. Q1126pis Rev 01/22 JJJ,MAM,GCY2•Normally, however, separation and elution are achieved by selectively decreasing the affinity of the molecules for the charged groups on the resin by changing the pH and/or ionic strength of the eluent. This procedure is termed gradient elution. 11. Regeneration: •Either (a) washing the column with a high ionic strength salt solution, such as 1 M NaCl, or (b) changing the pH to the tolerable low and high pH extremes, is usually sufficient to remove reversibly bound material.• When needed, lipids and precipitated proteins canbe removed by washing with 1 CV of 1-2 M NaCl, followed by 1 CV of 0.1 M NaOH in 0.5 M NaCl. • Rinse with several CV of water. Thenre-equilibrate the resin with starting buffer.• If base such as NaOH was used, adjust the pH ofthe resin to neutral before storing or using.12. Storage: Q Sepharose ® Fast Flow may be storedat 2-8 °C in water with 20% ethanol added as an antibacterial agent.General NotesCation versus Anion Exchanger• If sample components are most stable below their pI values, a cation exchanger should be used. • If sample components are most stable above their pI values, an anion exchanger should be used. •If stability is good over a wide pH range on both sides of the pI, either or both types of ion exchanger may be used.Strong versus Weak Ion Exchanger•Most proteins have pI values within the range 5.5-7.5, and can thus be separated on both strong and weak ion exchangers.•When maximum resolution occurs at an extreme pH and the molecules of interest are stable at that pH, a strong ion exchanger should be used. Choice of Buffer, pH, and Ionic Strength• The highest ionic strength which permits binding should normally be used.•The required buffer concentration varies fromsubstance to substance. Usually, an ionic strength of at least 10 mM is required to ensure adequate buffering capacity.•As salts (such as buffers) help to stabilize proteins in solution, their concentration should be highenough to prevent denaturation and precipitation.References1. López, G. et al ., Eukaryot. Cell , 14(6), 564-577(2015).2. Bhargava, V. et al ., Dev. Cell., 52(1), 38-52.e10(2020).3. Fu , Yinan, “Structure and dynamics ofPseudomonas aeruginosa ICP”. University ofGlasgow, Ph.D. dissertation, p. 126 (April 2009). 4. Redmond, Miranda , “The Role of N-TerminalAcidic Inserts on the Dynamics of the Tau Protein ”. University of Vermont, Ph.D. dissertation, p. 22 (May 2017).5. Taylor-Whiteley, Teresa Rachel , “RecapitulatingParkinson’s disease pathology in athree-dimensional neural cell culture mode ”. Sheffield Hallam University, Ph.D. dissertation, p. 58 (September 2019).NoticeWe provide information and advice to our customers on application technologies and regulatory matters to the best of our knowledge and ability, but without obligation or liability. Existing laws and regulations are to be observed in all cases by our customers. This also applies in respect to any rights of third parties. Our information and advice do not relieve ourcustomers of their own responsibility for checking the suitability of our products for the envisaged purpose. The information in this document is subject to change without notice and should not be construed as acommitment by the manufacturing or selling entity, or an affiliate. We assume no responsibility for any errors that may appear in this document.Technical AssistanceVisit the tech service page at /techservice .Standard WarrantyThe applicable warranty for the products listed in this publication may be found at /terms .Contact InformationFor the location of the office nearest you, go to /offices .。
OPA549T中文资料
q HIGH OUTPUT CURRENT: 8A Continuous 10A Peak q WIDE POWER SUPPLY RANGE: Single Supply: +8V to +60V Dual Supply: ±4V to ±30V q WIDE OUTPUT VOLTAGE SWING q FULLY PROTECTED: Thermal Shutdown Adjustable Current Limit q OUTPUT DISABLE CONTROL q THERMAL SHUTDOWN INDICATOR q HIGH SLEW RATE: 9V/µs q CONTROL REFERENCE PIN q 11-LEAD POWER ZIP PACKAGE
±20
25 –100 ±0.5 ±5 70 1 (V+) – 2.3 (V–) – 0.2 95 107 || 6 109 || 4
INPUT VOLTAGE RANGE Common-Mode Voltage Range: Positive VCM Negative VCM Common-Mode Rejection Ratio CMRR INPUT IMPEDANCE Differential Common-Mode OPEN-LOOP GAIN Open-Loop Voltage Gain FREQUENCY RESPONSE Gain Bandwidth Product Slew Rate Full Power Bandwidth Settling Time: ±0.1% Total Harmonic Distortion + Noise(3) AOL
VO = ±25V, RL = 1kΩ VO = ±25V, RL = 4Ω
BM20系列电子连接器说明书
●Receptacle/Header
BM 20 # (**) − * DS − 0.4 V (51)
⁞
⁞ Series Name: BM Series No.: 20
Shape Symbols B: With reinforcing metal fitting JC: Connector for conductivity testing
Contact resistance Maximum of 100 mø Insulation resistance Minimum of 25 mø
Left at temperature 40±2ç, humidity 90 to 95%, 96 hours
6. Temperature Cycles 7. Durability
■Product Number Structure
Refer to this page when determining product specifications by model types. Please place orders with part numbers listed in this catalog. The characteristics and specifications of the product described in this catalog are reference values. Please make sure to check the latest delivery specifications at the time of product use.
A space saving design that keeps the connector compact, but still maintains an adequate vacuum area (no less than 0.7mm wide). Depth DS: 2.3 mm DP: 1.78 mm
轴承代号含义接触器型号含义
轴承代号含义-接触器型号含义施耐德接触器型号施耐德接触器型号220V线圈型号LC1D09M7C| LC1D12M7C| LC1D18M7C| LC1D25M7C| LC1D32M7C| LC1D38M7C| LC1D40M7C| LC1D50M7C| LC1D65M7C| LC1D80M7C| LC1D95M7C| LC1D11500M7C| LC1D15000M7C| LC1D205M7C| LC1D245M7C| LC1D300M7C| LC1D410M7C| LC1D475M7C| LC1D620M7C380V线圈型号LC1D09Q7C| LC1D12Q7C|LC1D18Q7C| LC1D25Q7C| LC1D32Q7C| LC1D38Q7C| LC1D40Q7C| LC1D50Q7C| LC1D65Q7C| LC1D80Q7C| LC1D95Q7C| LC1D11500Q7C| LC1D15000Q7C| LC1D205Q7C| LC1D245Q7C| LC1D300Q7C| LC1D410Q7C| LC1D475Q7C| LC1D620Q7C施耐德热继电器型号LR2-D1301|LR2-D1302|LR2-D1303|LR2-D1304|LR2-D1305|LR2-D1306|LR2-D13 07|LR2-D1308|LR2-D1310|LR2-D1312|L R2-D1314|LR2-D1316|LR2-D1321|LR2-D1322|LR2-D2353|LR2-D3353|LR2-D33 55|LR2-D3357|LR2-D3359|LR2-D3361|L R2-D3363|LR2-D3365|LR2-D4365|LR2-D4367|LR2-D4369施耐德断路器NSE100E3025C65N 1P C1A C65N 1P D1A VIGIC65 1P+N 40A ELE C32H-DC 1P 1A C65N 1P C2A C65N 1P D2A VIGIC65 1P+N 63A ELE C32H-DC 1P2A C65N 1P C4A C65N 1P D4A VIGIC65 2P 40A ELE C32H-DC 1P 3A C65N 1P C6A C65N 1P D6A VIGIC65 2P 63A ELE C32H-DC 1P 6A C65N 1P C10A C65N 1P D10A VIGIC65 3P 40A ELE C32H-DC 1P 10A C65N 1P C16A C65N 1P D16A VIGIC65 3P 63A ELE C32H-DC 1P 16A C65N 1P C20A C65N 1P D20A VIGIC65 4P 40A ELE C32H-DC 1P 20A C65N 1P C25A C65N 1P D25A VIGIC65 4P 63A ELE C32H-DC 1P 25A C65N 1P C32A C65N 1P D32A VIGIC65 G 1P+N 40A ELE C32H-DC 1P 32A C65N 1P C40A C65N 1P D40A VIGIC65 G 1P+N 63A ELE C32H-DC 1P 40AC65N 1P C50A C65N 1P D50A VIGIC65 G 2P 40A ELE C32H-DC 2P 1A C65N 1P C63A C65N 1P D63A VIGIC65 G 2P 63A ELE C32H-DC 2P 2A C65N 2P C1A C65N 2P D1A VIGIC65 2P 32A ELM C32H-DC 2P 3A C65N 2P C2A C65N 2P D2A VIGIC65 2P 40A ELMC32H-DC 2P 6A C65N 2P C4A C65N 2P D4A VIGIC65 2P 63A ELM C32H-DC 2P 10A C65N 2P C6A C65N 2P D6A VIGIC65 3P 32A ELM C32H-DC 2P 16A C65N 2P C10A C65N 2P D10A VIGIC65 3P 40A ELM C32H-DC 2P 20A C65N 2P C16A C65N 2P D16A VIGIC65 3P 63A ELM C32H-DC 2P 25A C65N 2P C20A C65N 2P D20A VIGIC65 4P 32A ELM C32H-DC 2P 32A C65N 2P C25A C65N 2P D25A VIGIC65 4P 40A ELM C32H-DC 2P 40A C65N 2P C32A C65N 2P D32A VIGIC65 4P 63A ELM VIGINC100 2P 30MA C65N 2P C40A C65N 2P D40A NC100H 断路器VIGINC100 2P 300MA C65N 2P C50A C65N 2P D50A NC100H C 1P 63A VIGINC100 2P 500MA C65N 2P C63A C65N 2P D63A NC100H C 1P 80A VIGINC100 2P 300MA S C65N 3P C1A C65N 3P D1A NC100H C 1P 100A VIGINC100 3P 30MA C65N 3P C2AVIGINC100 3P 300MA C65N 3P C4A C65N 3P D4A NC100H C 2P 80A VIGINC100 3P 500MA C65N 3P C6A C65N 3P D6A NC100H C 2P 100A VIGINC100 3P 300MA S C65N 3P C10A C65N 3P D10A NC100H C 3P 63A VIGINC100 4P 30MA C65N 3P C16A C65N 3P D16A NC100H C 3P 80A VIGINC100 4P 300MA C65N 3P C20A C65N 3P D20A NC100H C 3P 100A VIGINC100 4P 500MA C65N 3P C25A C65N 3P D25A NC100H C 4P 63A VIGINC100 4P 300MA S C65N 3P C32A C65N 3P D32A NC100H C 4P 80A NC125H 断路器C65N 3P C40A C65N 3P D40A NC100H C 4P 100A NC125H C 1P 125A C65N 3P C50A C65N 3P D50A NC100H D 1P 63A NC125H C 2P 125A C65N 3P C63A C65N 3P D63A NC100H D 1P 80A NC125H C125A 3P C65N 4P C1ANC125H C 4P 125A C65N 4P C2A C65N 4P D2A NC100H D 2P 63A C65H 3P D20AC65N 4P C4A C65N 4P D4A NC100H D 2P 80A C65H 3P D25AC65N 4P C6A C65N 4P D6A NC100H D 2P 100A C65H 3P D32A C65N 4P C10A C65N 4P D10A NC100H D 3P 63A C65H 3P D40A C65N 4P C16A C65N 4P D16A NC100H D 3P 80A C65H 3P D50A C65N 4P C20A C65N 4P D20A NC100H D 3P 100A C65H 3P D63A C65N 4P C25A C65N 4P D25A NC100H D 4P 63A C65H 1P D20A C65N 4P C32A C65N 4P D32A NC100H D 4P 80A C65H 1P D25A C65N 4P C40A C65N 4P D40A NC100H D 4P 100A C65H 1P D32A C65N 4P C50A C65N 4P D50A C65L 3P D50A C65H 1P D40AC65N 4P C63A C65N 4P D63A C65L3P D63A C65H 1P D50A 互感器的型号含义互感器的型号含义由字母符号及数字组成，通常表示电流互感器绕组类型、绝缘种类、使用场所及电压等级等。
元素符号表
元素符号表符号序数繁体中文简体中文英文Ac 89 锕锕ActiniumAg 47 银银Silver (来自拉丁语Argentum) Al 13 铝铝AluminiumAm 95 鎇、鋂镅AmericiumAr 18 氩氩ArgonAs 33 砷砷ArsenicAt 85 砹砹AstatineAu 79 金金Gold (来自拉丁语Aurum)B 5 硼硼BoronBa 56 钡钡BariumBe 4 铍铍BerylliumBh 107 BohriumBi 83 铋铋BismuthBk 97 錇、鉳锫BerkeliumBr 35 溴溴BromineC 6 碳碳CarbonCa 20 钙钙CalciumCd 48 镉镉CadmiumCe 58 铈铈CeriumCf 98 鐦、鉲锎CaliforniumCl 17 氯氯ChlorineCm 96 锔锔CuriumCn 112 鎶CoperniciumCo 27 钴钴CobaltCr 24 铬铬ChromiumCs 55 铯铯CaesiumCu 29 铜铜Copper (来自拉丁语Cuprum) Db 105 DubniumDs 110 鐽DarmstadtiumDy 66 镝镝DysprosiumEr 68 铒铒ErbiumEs 99 鎄、鑀锿EinsteiniumEu 63 铕铕EuropiumF 9 氟氟FluorineFe 26 铁铁Iron (来自拉丁语Ferrum)Fm 100 镄镄FermiumFr 87 钫、鍅钫FranciumGa 31 镓镓GalliumGd 64 钆钆GadoliniumGe 32 锗锗GermaniumH 1 氢氢HydrogenHe 2 氦氦HeliumHf 72 铪铪HafniumHg 80 汞汞Mercury (来自拉丁语Hydragyrum) Ho 67 钬钬HolmiumHs 108 HassiumI 53 碘碘IodineIn 49 铟铟IndiumIr 77 铱铱IridiumK 19 钾钾Potassium (来自德语Kalium)Kr 36 氪氪KryptonLa 57 镧镧LanthanumLi 3 锂锂LithiumLr 103 铹铹LawrenciumLu 71 鑥、镏镥LutetiumMd 101 钔钔MendeleviumMg 12 镁镁MagnesiumMn 25 锰锰ManganeseMo 42 钼钼MolybdenumMt 109 䥑MeitneriumN 7 氮氮NitrogenNa 11 钠钠Sodium (来自拉丁语Natrium)Nb 41 铌铌NiobiumNd 60 钕钕NeodymiumNe 10 氖氖NeonNi 28 镍镍NickelNo 102 鍩锘NobeliumNp 93 鎿、錼镎NeptuniumO 8 氧氧OxygenOs 76 锇锇OsmiumP 15 磷磷PhosphorusPa 91 镤镤ProtactiniumPb 82 铅铅Lead (来自拉丁语Plumbum)Pd 46 钯钯PalladiumPm 61 鉕钷PromethiumPo 84 钋钋PoloniumPr 59 镨镨PraseodymiumPt 78 铂铂PlatinumPu 94 鈈、钸钚PlutoniumRa 88 镭镭RadiumRb 37 铷铷RubidiumRe 75 铼铼RheniumRf 104 炉、RutherfordiumRg 111 錀RoentgeniumRh 45 铑铑RhodiumRn 86 氡氡RadonRu 44 钌钌RutheniumS 16 硫硫SulfurSb 51 锑锑Antimony (来自拉丁语Stibium) Sc 21 钪钪ScandiumSe 34 硒硒SeleniumSg 106 䤭SeaborgiumSi 14 硅、矽硅SiliconSm 62 钐钐SamariumSn 50 锡锡Tin (来自拉丁语Stannum)Sr 38 锶锶StrontiumTa 73 钽钽TantalumTb 65 铽铽TerbiumTc 43 鍀、鎝锝TechnetiumTe 52 碲碲TelluriumTh 90 钍钍ThoriumTi 22 钛钛TitaniumTl 81 铊铊ThalliumTm 69 铥铥ThuliumU 92 铀铀UraniumUuh 116 UnunhexiumUuo 118 UnunoctiumUuq 114 UnunquadiumV 23 钒钒VanadiumW 74 钨钨Tungsten (来自德语Wolfram) Xe 54 氙氙XenonY 39 钇钇YttriumYb 70 镱镱Ytterbium Zn 30 锌锌ZincZr 40 锆锆Zirconium。
化学元素周期表注音版
200.59
81 Tl tā
铊
204.38 3
82 Pb qiān
铅
207.2
83 Bi bì
铋
208.98
84 Po pō
钋
209
85 At ài
砹
210
86 Rn dōng
氡
222
P O N M L K
8
18 32 18 8
2
7
87 Fr fāng
钫 (223)
88 Ra léi
镭 (226）
49 In yīn
铟
114.81 8
50 Sn xī
锡
118.71
51 Sb tī
锑
121.76
52 Te dì
碲
127.6
53 I diǎn
碘
126.90 4
54 Xe xiān
氙
131.29 3
O N M L
K
8 18 18 8
2
6
55 Cs sè
铯
132.90 5
56 Ba bèi
钡
137.32 7
钪
44.955 9
22 Ti tài
钛
47.867
23 V fán
钒
50.941 5
24 Cr gè
铬
51.996 1
25 Mn měng
锰
54.938
26 Fe tiě
铁
55.845
27 Co gǔ
钴
58.933 1
28 Ni niè
镍
58.693 4
29 Cu tóng
铜
63.546
30 Zn xīn
ns08020化学成分
ns08020化学成分
NS08020，也被称为Carpenter20，是一种镍-铁-铬奥氏体合金。
其主要的化学成分包括：
* 镍（Ni）：32.0～38.0%
* 铬（Cr）：19.0～21.0%
* 铁（Fe）：余量
此外，还可能含有少量的其他元素，例如碳（C）≤0.07%，锰（Mn）≤2.0%，硅（Si）≤1.0%，磷（P）≤0.045%，硫（S）≤0.035%，铌（Nb）≤1.0%，铝（Al）≤0.2%，钛（Ti）0.6～1.2%，铜（Cu）3.0～4.0%，以及钼（Mo）2.0～3.0%。
这些化学成分使得NS08020合金具有出色的耐腐蚀性，特别是在含有氯化物、硫酸、磷酸、硝酸等化学制品的环境中，对全面腐蚀、点蚀和缝隙腐蚀具有优良的抵抗能力。
同时，铌的加入还有效地对抗了敏化和合成晶间腐蚀。
请注意，合金的具体化学成分可能会因生产方法和处理工艺的不同而有所差异。
因此，在实际应用中，建议参考相关标准和制造商提供的数据。
化学元素周期表中英文对照
氢 氦 锂 铍 硼 碳 氮 氧 氟 氖 钠 镁 铝 硅 磷 硫 氯 氩 钾 钙 钪 钛 钒 铬 锰
H He Li Be B C N O F Ne Na Mg Al Si P S Cl Ar K Ca Sc Ti V Cr Mn
101 102 103 104 105 106
钔 锘 铹
Md No Lr Rf Db Sg
Mendelevium Nobelium Lawrencium Unnilquadium Unnilpentium Unnilhexium
107 108 109 110 111
Bh Hs Mt Uuu Uub
Unnilseptium Hassium Mietnerium Unununium Ununbium
氙 铯 钡 镧 铈 镨 钕 钷 钐 铕 钆 铽 镝 钬 铒 铥 镱 镥 铪 钽 钨 铼
Xe Cs Ba La Ce Pr Nd Pm Sm Eu Gd Td Dy Ho Er Tm Yb Lu Hf Ta W Re
Xenon 79 金 Au Cesium 80 汞 Hg Barium 81 铊 Tl Lanthanum 82 铅 Pb Cerium 83 铋 Bi Praseodymium 84 钋 Po Neodymium 85 砹 At Promethium 86 氡 Rn Samarium 87 钫 Fr Europium 88 镭 Ra Gadolinium 89 锕 Ac Terbium 90 钍 Th Dysprosium 91 镤 Pa Holmium 92 铀 U 化学元素中英文对照 Erbium 93 镎 Np Thulium 94 钚 Pu Ytterbium 95 镅 Am Lutetium 96 锔 Cm Hafnium 97 锫 Bk Tantalum 98 锎 Cf Tungsten 99 锿 Es Rhenium 100 镄 Fm
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五矿地产净利润同比增长20.6%将推进项目快速开
发销售:五矿信托净利润
新华网北京3月26日电（王日晨）日前，五矿地产公布了2018
年度业绩报告。
年内，五矿地产经营业绩持续增长，由于经营效益
提升及有效成本控制，实现净利润约17.5亿港元，同比增长20.6%。
业绩持续增长
2018年，五矿地产全年实现收入109.3亿港元，净利率由上年
的12.1%升至16.1%；由于较高毛利率产品获确认入账，本集团整体
毛利率由34.3%上升至35.6%；归属公司股权持有溢利为9.34亿港元，同比增加31.15%。
报告称，由于新增签约销售减少导致销售开支下降，五矿地产销售及营销成本下降5.4%至1.76亿港元；而由于去年对存货及应收
账款等进行了一次性较高的减值拨备，年度相对应的减值拨备较去
年大幅减少63.3%，使行政及其他开支下降8.6%至5.39亿港元。
房地产业务方面，签约销售总额减少约15.3%至68.18亿元，签
约销售总楼面面积则上升约19.6%至44.5万平方米，签约销售单位
数量下降3.5%至5430个单位，平均售价下降约29.5%至每平方米约
为15,300元人民币，集团签约销售额主要源自一线及核心二线城市
的房地产发展项目。
截至2018年12月31日，集团旗下22个房地产发展项目，分布北京、营口、廊坊、天津、南京、长沙、武汉、惠州、佛山、广州
及香港等11个城市，合共可开发土地储备的总楼面面积约为456万
平方米。
报告期内，集团新增两项房地产发展项目，土地储备总可开发楼面面积因而增加约32.5万平方米。
新增土地储备之成本约为33.37
亿元人民币，平均成本约为每平方米10300元。
五矿地产称，广佛
地区为集团深耕区域，新增土地储备将继续深化公司在大湾区地区
的领先地位，进一步提升品牌渗透力，继续推进公司的快速发展。
财务保持稳健
报告期内，集团营运资金主要来自业务营运所带来的现金流及借款。
截至2018年12月31日，本集团拥有现金及银行存款约36.1亿港元，其中75.8%、15.1%、9.0%及0.1%（2017年：93.0%、3.4%、2.5%及1.1%）分别以人民币、港元、美元及澳门币列值。
年内，集团已动用融资连同内部资源为收购新项目及发展现有项目提供资金。
报告期内，借款总额为约151亿港元，当中主要包括
银行借款及债券发行。
本集团的资产总额轻微下降3.6%至约473亿港元；净资产则增
长8.9%至约148亿港元，主要由于在2018年5月17日发行面值2
亿美元之7.0%优先永续资本证券。
五矿地产称，本集团的财务状况保持稳健，资产负债率由上年的72.3%下降至68.7%；净负债率为75.9%。
由于年内部分项目销售进
度延迟及部分项目集中在年底开盘，合约负债于年内下滑41.1%。
报告期内，本集团之加权平均借贷成本保持在约 4.75%的低水平。
此外，尚未使用的银行融资额度约为106亿港元。
加快周转效率
展望2019年，五矿地产表示将“坚持战略引领、加快周转效率、持续提升专业能力、创新实施精品战略”，把推进项目快速开发和
销售作为经营工作的重中之重，化解市场风险，确保现金流安全。
在战略层面，聚焦现有四大区域和重点拓展的成渝城市群，继续采取合作策略，把握机遇适时补充优质土地资源。
另外，提高公司在房地产开发上的软实力，丰富产品和服务的价值，增强业务综合竞争力，全面支撑业务发展。
在财务管理方面，将坚持稳健理财，严控负债率及费用支出，并加强资本运作力度，优化公司资本结构，充分发挥香港上市平台的融资优势。