GaN+HFET研究的最新进展

GaN HFET研究的最新进展作者：薛舫时作者单位：南京电子器件研究所,江苏,南京,210016刊名：微纳电子技术英文刊名：MICRONANOELECTRONIC TECHNOLOGY年，卷(期)：2004，41(9)被引用次数：0次1.Wu Y F.KAPOLNEK D.IBBETSON J P Very-high power density AlGaN/GaN HEMTs 2001(03)2.Hasegawa H.INAGAKI T.OOTOMO S Mechanisms of current collapse and gate leakage currents inAlGaN/GaN heterostructure field effect transistors 2003(04)3.Zhang A P.ROWLAND L B.KAMINSKY E B Correlation of device performance and defects in AlGaN/GaNhigh-electron mobility transistors 2003(05)4.薛舫时Ⅲ族氮化物HFET中的电流崩塌和二维电子气[期刊论文]-微纳电子技术 2004(01)5.KOUDYMOV A.SIMIN G.KHAN M A Dynamic current-voltage characteristics of Ⅲ-N HFETs 2003(11)6.VELLAS A.GAQUIERE C.BUE F Load impedance influence on the ID (VDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz 2002(05)7.Shen L.COFFIE R.BUTTARI D High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 2004(01)8.KOLEY G.TILAK V.EASTMAN L F Slow transient observed in AlGaN/GaN HFETs:Effects of SiNx passivation and UV illumination 2003(04)9.NEUBURGER M.ALLGAIER J.ZIMMERMANN T Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode 2004(05)10.Karmalkar S.MISHRA U K Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator 2001(09)11.Xing H.DORA Y.CHINI A High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 2003(04)12.Okamoto Y.ANDO Y.HATAYA K96W AlGaN/GaN Heterojunction FET with field-modulating plate 2003(20)13.Thompson R.PRUNTY T.KAPER V Performance of the AlGaN HEMT structure with a gate extension2004(02)14.Wu Y F.SAXLER A.MOORE M30-W/mm GaN HEMTs by field plate optimization 2004(03)15.Chini A.BUTTARI D.COFFIE R Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs 2004(05)16.Green B M.TILAK V.KAPER V S Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions 2003(02)17.Arulkumaran S.EGAWA T.ISHIKAWA H Characterization of different-Al-content ALxGa1-xN/GaN heterostruetures and high-electron-mobility transistors on sapphire 2003(02)18.WONG M M.CHOWDHURY U.SICAULT D Deltadoped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition 2002(09)19.Levinshtein M E.IVANOV P A.KHAN M A Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors 200320.Kohn E.DAUMILER I.KUNZE M Transient characteristics of GaN-based heterostructure field-effect transistor 2003(02)21.NEUBURGER M.DAUMILLER I.ZIMMERMANN T Surface stability of InGaN-channel based HFETs 2003(22)22.Shen L.COFFIE R.BUTTARI D High-power pola rization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 2004(01)23.SET researches nitride HEMT milestone 2003(09)24.Shen L.HEIKMAN S L.MORAN S AlGaN/GaN high-power microwave HEMT 2001(10)25.LEE J S.KIM J W.LEE J H Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer 2003(09)26.Kumar V.LU W.SCHWINDT R AlGaN/GaN HEMTs on SiC with fT of over 120 GHz 2002(08)27.Lee C.WANG H.YANG J State-of-art CW power density achieved at 26 GHz by AlGaN/Gan HEMTs 2002(16)28.Yuan H.CHUA S J.TRIPATHY S Effect of indium surfactant on the crystalline and optical properties of GaN during initial growth stage 2003(06)29.Youn D H.KUMAR V.LEE J H High power 0.25 μm gate GaN HEMTs on sapphire with power density4.2W/mm at 10 GHz[期刊论文]-Electronics Letters 2003(06)30.Jeon C M.LEE J H.LEE J H The improvement of DC performance in AlGaN-GaN HFETs with isoelectrronic Aldoped channels 2004(03)31.Youn D H.LEE J H.KUMAR V The effects of isoelectronic Al doping and process optimization for fabrication of high-power AlGaN-GaN HEMTs 2004(05)32.BARDWELL J A.SPROULE G I.LIU Y Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN 2002(04)33.READINGER E D.MOHNEY S E.PRIBICKO T G Ohmic contacts to Al-rich n-AlGaN 2002(20)34.Lee C C.LEE C P.YEH M H Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments 2003(04)35.Lee C T.LIN Y J.LIU D S Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2,Sx-treated ntype GaN 2001(16)36.AO J P.KIKUTA D.KUBOTA N Copper gate AlGaN/GaN HEMT with low gate leakage current 2003(08)37.BARINOV A.GREGORATTI L.CASALIS L Inteffacial reactions and Schottky barrier properties of composite patterned metal/GaN interfaces 2002(05)38.Miura N.OISHI T.NANJO T Effect of interfacial thin metal layer for high performance Pt-Au-based Schottky contacts to AlGaN-GaN 2004(03)39.BUTTARI D.CHINI A.MENEGHESSO G Systemic characterization of Cl2 reactive etching for gate recessing in AlGaN/GaN HEMTs 2002(03)40.Wang W K.LI Y J.LIN C K Low damage,Cl2-based gate recess etching for 0.3 μm gate lengthAlGaN/GaN HEMT fabrication 2003(02)of AlGaN/GaN HEMTs 2002(09)42.Hampson M D.SHEN S C.SCHWINDT R S Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz 2003(05)43.Hashizume T.OOTOMO S.INAGAKI T Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors 2003(04)44.Arulkumaran S.MIYOSHI M.EGAWA T Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate 2003(08)45.Sun J.FATIMA H.KOUDYMOV A Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill 2003(06)46.BARDWELL J A.LIU Y.TANG H AlGaN/GaN HFET devices grown by ammonia-MBE with high fT and fmax[期刊论文]-Electronics Letters 2003(06)47.JESSEN G H.FITCH R C.GILLESPIE J K High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC 2002(11)48.Lu W.KUMAR V.SCHWINDT R RF,and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates 2002(11)49.MANFRA M.WEIMANN N.BAEYENS Y Unpassivated AlGaN/GaN HFETs with CW power density of 3.25 W/mm at 25 GHz 2003(08)50.Adivarahan V.GAEVSKI M.SUN W H Submicron Gate Si3N4/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors 2003(09)51.Kumar V.LU W.KHAN F A High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire trabsconductance of over 400 mS/mm 2002(05)52.Kumar V.LEE J W.KULIEV A High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power ensity of 6.7 W/mm at 18 GHz 2003(22)53.Lee C.SAUNIER P.YANG J AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23%PAE at 35 GHz 2003(10)54.VERTIATCHIKH A A.EASTMAN L F Effect of drain-to source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics 2003(11)55.DISANTO D W.KWAN A C.BOLOGNESI C R Gate-todrain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs 2002(16)56.TARAKJI A.FATIMA H.HU X Large-signal linearity in Ⅲ-N MOSDHFETs 2003(06)57.Chini A.WITTICH J.HEIKMAN S Power and linearity characteristics of GaN MISFETs on sapphire substrate 2004(02)58.MINKO A.HOEL V.LEPILLIET S High microwave and noise performance of 0.17 μm AlGaN-GaN HEMTs on high-resistivity silicon substrates 2003(04)59.BEHTASH R.TOBLER H.NEUBURGER M AlGaN/GaN HEMTs on Si (111 ) with 6.6 W/mm output power density 2003(07)60.Lu W.KUMAR V.SCHWINDT R DC,RF,and microwave noise performances of AlGaN/GaN HEMTs on sapphire61.Chini A.COFFIE R.MENEGHESSO G2.1 A/mm current density AlGaN/GaN HEMT 2003(07)本文链接：/Periodical_wndzjs200409001.aspx授权使用：黄小强(wfxadz)，授权号：37dc65b4-9717-4095-9e4d-9eac01574b4a下载时间：2011年3月20日。