XRF 050406 late-time flattening an inverse Compton component
MORNSUN URF48_QB-200W(F H)R3 产品说明书

200W isolated DC-DC converterUltra-wideinputandregulated singleoutputPatent Protection RoHSFEATURES●Ultra-wide 4:1input voltage range ●High efficiency up to 91%●I/O isolation test voltage 2.25k VDC ●Input under-voltage protection,output short-circuit,over-current,over–voltage,over-temperature protection●Operating ambient temperature range -40℃to +85℃●Five-sided metal shielded package ●Industry standard ¼-Brick package andpin-out●EN62368approvedURF48_QB-200W(F/H)R3series are isolated 200W DC-DC products with 4:1input voltage.They feature efficiency up to 91%,2250VDC input to output isolation,operating ambient temperature of -40℃to +85℃,input under-voltage,output short circuit,over-current,over–voltage,over-temperature protection.The products meet CLASS A of CISPR32/EN55032EMI standards by adding the recommended external components and they are widely used in applications such as battery powered systems,industrial controls,electricity,instrumentation,railway,communication and intelligent robotic.Selection GuideCertificationPart No.①Input Voltage (VDC)OutputFull Load Efficiency(%)Min./Typ.Capacitive Load(µF)Max.Nominal (Range)Max.②Voltage(VDC)Current (A)(Max.)CEURF4805QB-200W(F/H)R348(18-75)8054086/886000URF4812QB-200W(F/H)R31216.789/912000URF4815QB-200W(F/H)R31513.387/892000URF4824QB-200W(F/H)R3248.489/911000URF4848QB-200W(F/H)R348 4.289/91450--URF4836QB-200W(H)R348(18-75)80365.5686/881000Note:①Use“F”suffix is for added aluminum baseplate and “H”suffix for heat sink mounting.We recommended to choose modules with a heat sink for enhanced heat dissipation and applications with extreme temperature requirements;②Exceeding the maximum input voltage may cause permanent damage.Input SpecificationsItemOperating ConditionsMin.Typ.Max.UnitInput Current (full load/no-load)Nominal input voltage 12V 、24V 、48V output--4579/1004682/200mA 15V output --4682/1004845/2005V 、36V output--4739/1004849/200Reflected Ripple Current Nominal input voltage--100--Surge Voltage (1sec.max.)-0.7--90VDC Start-up Threshold Voltage ----18Input Under-voltage Protection 1416--Input Filter Pi filterCtrl*Module on Ctrl pin open or pulled high (3.5-12VDC)Module offCtrl pin pulled low to GND (0-1.2VDC)Ctrl*Input current when off --210mAHot PlugUnavailableNote:*The Ctrl pin voltage is referenced to input GND.Output SpecificationsItemOperating ConditionsMin.Typ.Max.UnitVoltage Accuracy --±1±3%Linear Regulation Input voltage variation from low to high at full load --±0.2±0.5Load Regulation 5%-100%load--±0.5±0.75Transient Recovery Time 25%load step change --300500µs Transient Response Deviation 25%load step change 5V output --±3±7.5%Others--±3±5Temperature Coefficient Full load----±0.03%/℃Ripple &Noise*20MHz bandwidth36V output --150300mVp-p Others --150250Over-voltage Protection Input voltage range110130160%Vo Over-current Protection 110130150%Io Short-circuit ProtectionHiccup,continuous ,self-recoveryNote:The “parallel cable”method is used for ripple and noise test,please refer to DC-DC Converter Application Notes for specific information.General SpecificationsItem Operating Conditions Min.Typ.Max.UnitIsolationInput-output Electric Strength Test for 1minute with a leakage current of 5mA max2250----VDC Input-case 1500----Output-case500----Insulation Resistance Input-output resistance at 500VDC 100----M ΩIsolation Capacitance Input-output capacitance at 100KHz/0.1V 36V output --22003000pF Others --2200--Trim 36V output 100--110%Vo Others90--110Sense----105Operating Temperature -40--+85℃Storage Temperature -55--+125Over-temperature Protection Max.Case Temperature 36V output 95105115Others--115120Pin Soldering Resistance TemperatureWave-soldering,10seconds----260Soldering spot is 1.5mm away from case for 10seconds ----300Thermal resistance Free air convection (20LFM)URF48xxQB-200WR3----7.5℃/W URF48xxQB-200WFR3---- 6.3URF48xxQB-200WHR3---- 5.2Storage Humidity Non-condensing 5--95%RH VibrationIEC/EN61373train 1B categorySwitching Frequency PWM mode--250--KHz MTBFMIL-HDBK-217F@25℃500----K hours Mechanical SpecificationsCase Material Aluminum alloy case,black plastic bottom,flame-retardant and heat-resistant (UL94V-0)DimensionsURF48xxQB-200WR361.8×40.2×12.7mmDimensionsURF48xxQB-200WFR362.0×56.0×14.6mm URF48xxQB-200WHR361.8×40.2×27.7mm WeightURF48xxQB-200WR389.0g(Typ.)URF48xxQB-200WFR3109.0g(Typ.)URF48xxQB-200WHR3120.0g(Typ.)Cooling MethodFree air convection (20LFM)Electromagnetic Compatibility (EMC)EmissionsCECISPR32/EN55032CLASS A(see Fig.2for recommended circuit)RE CISPR32/EN55032CLASS A (see Fig.2for recommended circuit)ImmunityESD IEC/EN61000-4-2,EN50121-3-2Contact ±6KV Air ±8KV perf.Criteria B RS IEC/EN61000-4-3,EN50121-3-210V/mperf.Criteria A EFTIEC/EN61000-4-4,EN50121-3-2±2KV(see Fig.2for recommended circuit)perf.Criteria A Surge EN50121-3-2differential mode ±1KV,1.2/50us,source impedance 42Ω(see Fig.2for recommended circuit)perf.Criteria B CSIEC/EN61000-4-6,EN50121-3-210Vr.m.sperf.Criteria ATypical Characteristic CurvesNotes :1)Product application thermal design should be referred to the recommended PCB layout and recommended heat dissipation structure,please refer to DC-DC Converter Application Notes for specific information.Remote Sense Application1.Remote Sense Connection if not usedNotes :(1)If the sense function is not used for remote regulation the user must connect the +Sense to +Vo and -Sense to 0V at the DC-DC converter pins and will compensate for voltage drop across pins only.(2)The connections between Sense lines and their respective power lines must be kept as short as possible,otherwise they may be picking up noise,interference and/or causing unstable operation of the power module.2.Remote Sense Connection used for CompensationNotes :(1)Using remote sense with long wires may cause unstable output,please contact technical support if long wires must be used.(2)PCB-tracks or cables/wires for Remote Sense must be kept as short as possible.Twisted pair or shielded wire are suggested for remote compensation and must be kept as short as possible.(3)We recommended using adequate cross section for PCB-track layout and/or cables to connect the power supply module to the load in order to keep the voltage drop below 0.3V and to make sure the power supply's output voltage remains within the specified range.(4)Note that large wire impedance may cause oscillation of the output voltage and/or increased ripple.Consult technical support or factory for further advice of sense operation.Design Reference1.Typical application(1)We recommended using the recommended circuit shown in Fig.1during product testing and application,otherwise please ensure that at least a 220μF electrolytic capacitors is connected at the input in order to ensure adequate voltage surge suppression and protection.(2)We recommended increasing the value of Cin and pay attention to the unstable input voltage if the product input side is paralleled with motor drive circuit and/or larger energy transient circuits,to ensure the stability of input terminal and avoid repeatedly start-up problems due to input voltage lower than under-voltage protection point.(3)We recommended increasing the output capacitance with limited to the capactive load specification and/or increasing the voltage clamping circuit(such as TVS)if the output terminal is inductive device such as relay or a motor,to ensure adequate voltage surge suppression and protection.(4)Input and/or output ripple can be further reduced by appropriately increasing the input &output capacitor values Cin and Cout and/or by selecting capacitors with a low ESR (equivalent series resistance).Also make sure that the capacitance is not exceeding the specified max.capacitive load value of the product.Fig.1Note:*Please pay attention to the ambient temperature of the product when using an external capacitor,increase the electrolytic capacitor values to at least 1.5times the original parameter if the ambient temperature is low.Vout(VDC)FuseCin *Cout TVS 520A,slow blow220µF470µF SMDJ6.0A 12220µFSMDJ14A 15SMDJ17A 24100µFSMDJ28A 36SMDJ47A 48SMDJ54A2.EMC compliance circuitWe recommended using the recommended circuit shown in Fig.2during product EMC testing and application.L 1VinC1+CY2CY 4C5L 2Vin GNDDC/DC+V o0V+C2C3C4C6C7C8C9CY 3CY1Fig.2Componentsrecommended Component value C1150µF/100V electrolytic capacitor C947µF/100V electrolytic capacitor C2,C3,C4,C5,C6,C7,C82.2µF/100V ceramic capacitor L1 2.0mH,recommended to use MORNSUN P/N:FL2D-A2-202(C)L21.5µH/15A inductance CY1,CY2,CY3,CY41nF Y1safety capacitor3.Trim Function for Output Voltage Adjustment (open if unused)R 2R 1R 3V ref R TTrimVo’R 2R 1R 3V ref R TVo’Trim upTrim downTRIM resistor connection (dashed line shows internal resistor network )Calculation formula of Trim resistance:up: a=VrefVo’-Vref R 1R =T aR 2R -a 2-R 3down: a=VrefVo’-VrefR 2R =T aR 1R -a1-R 3R T =Trim Resistor value;a =self-defined parameterVo’=desired output voltage (±10%max.)Vout(VDC)R1(K Ω)R2(K Ω)R3(K Ω)Vref(V)5 3.036310 2.51211.00 2.8715 2.51514.03 2.815 2.52424.872 2.8715 2.53638.73 2.8515 2.54853.0172.913152.5Note:(1)When using the Trim down function make sure that the RT resistor value is calculated correctly.If the Trim pin is shorted with +Vo,or its value is too low,then the output voltage Vo would be lower than 0.9Vo,which may cause the product to fail;(2)URF4836QB-200W(H)R3has no down-regulation function,otherwise it may cause irreparable damage to the product.4.Reflected ripple current--test circuitDCVo0VCinDC OscilloscopeLin Note:Lin(4.7µH),Cin(220µF ,ESR <1.0Ωat 100KHz)5.The products do not support parallel connection of their output.6.We recommended the use of a converter with higher output power capability to cover applications with higher power requirements.7.For additional information please refer to application notes on URF48xxQB-200WR3Dimensions and recommended LayoutURF48xxQB-200WFR3Dimensions and recommended Layout URF48xxQB-200WHR3Dimensions and recommended LayoutNote:1.For additional information on Product Packaging please refer to .Packaging bag number:58010113(URF48xxQB-200WR3),58200069(URF48xxQB-200WFR3),58220017(URF48xxQB-200WHR3);2.The maximum capacitive load offered were tested at input voltage range and full load;3.Unless otherwise specified,data in this datasheet should be tested under the conditions of Ta=25℃,humidity<75%RH with nominal input voltage and rated load;4.All index testing methods in this datasheet are based on our company corporate standards;5.We can provide product customization service and match filter module;6.Products are related to laws and regulations:see"Features"and"EMC";7.Our products shall be classified according to ISO14001and related environmental laws and regulations,and shall be handled by qualified units.Mornsun Guangzhou Science&Tech nolo gy Co.,Ltd.Address:No.5,Kehui St.1,Kehui Development Center,Science Ave.,Guangzhou Science City,Huangpu District,Guangzhou,P.R.China Tel:86-20-38601850Fax:86-20-38601272E-mail:***************。
钢铁大侠Dixon A540系列地面接线器说明书

A540 SERIES GROUND CLAMPContentsOverview (2)Features (2)Technical Specifications (3)Installation (6)Maintenance (8)Replacement parts (8)Operation (9)Warranty (9)Sales and Service Contacts (10)OverviewThe A540 Series ground clamps are key to creating a quality temporary connection for antistatic grounding applications. The clamp features three teeth to penetrate dirt, corrosion, and road grime when in use. The teeth are constructed of stainless steel to ensure lasting operation, and isolated from the clamp handle to allow operators to establish ground and a ground-verification signal in a single clamp action. The A540 also includes a high durability cable and junction box for convenient wiring access during installation and maintenance.Common applications for the A540 series ground clamp include:•Tank truck and Rail car loading facilities•Drum and barrel filling sites•Loading of stationary tanksFeatures•Clamp tethered to cable by stainless steel strap to protects connection from strain and wear. •Pull-out resistant cord grip on junction box holds cable tighter the harder it is pulled. •Junction box creates convenient service point for hazardous location installations.•Coiled cable for compact storage.•Strong clamping force to penetrate grime and remain connected during loading process. •Can provide ground and a ground-verification signal in a single clampTechnical SpecificationsMIN MAX NOMINAL AMBIENT TEMPERATURE -40°C 90°C -JUNCTION BOXHEIGHT 10.75 in. [27.3cm] INCLUDES STRAIN RELIEFWIDTH 3.0 in. [7.62cm]DEPTH 3.0 in. [7.62cm]WEIGHT 5 lbs. (2.27 kg)INGRESS PROTECTION Weatherproof, raintight, and dust tightCONDUIT ENTRIES ONE ¾” TRADE SIZE HOLE + FACTORY INSTALLED CABLE ONBOTTOMSUITABLE FOR INSTALL IN HAZARDOUS LOCATIONS: Class I, Division 1 & 2, Groups B, C, and D hazardous locationsClass II, Division 1 & 2, Groups E, F, and G hazardous locationsClass III hazardous locationsSUITABLE FOR CONNECTION TO HAZARDOUS LOCATIONS: Class I, Division 1 & 2, Groups A, B, C, and D hazardous locationsClass I, Zone 0, 1 & 2, Groups IIC, IIB, and IIA hazardous locationsCABLELENGTH 25 ft. stretched [7.6m] (Standard; other lengths available) DIAMETER 0.4 in. [1.0cm]WEIGHT 2.5 lbs. [1.13kg]; 0.1 lbs. PER FOOT [0.15g per meter] JACKET MATERIAL Thermoplastic Elastomer, resistant to harsh environments. RESISTANCE 0.14Ω (6mΩ/foot)RECOMMENDED WIREBETWEEN CONTROLLER ANDA54018 GA Stranded copper wire (THHN)AccessoriesGround Verification Monitor:The A240 series ground verification monitors are designed to mitigate the danger of static buildup by verifying the presence of a high quality and reliable earth-ground bond. With the presence of a ground path for static to dissipate, loading and unloading of flammable or combustible liquids can be done safely. The A240 monitor verifies the bond is of sufficient quality to prevent static buildup. Internal indicators inform the operator whether the process connection is safely grounded and internal relay contacts may be used to interlock operations until a safe earth bonding has been established.Sealing Fitting:Sealing fittings are required within 18 inches of each enclosure entry used. These seal conduits from passing hazardous vapors or propagating flame. Sealing fittings are installed in-line with conduit, then filled with sealing compound once wiring has been installed and verified. Downstream junction boxes containing Intrinsically Safe circuits may be serviced without danger.¾” NPT Vertical Seal fitting with nipple; P/N: 30192ALNote: Actual color may differWiring DiagramInstallationINSTALLATION MUST BE COMPLETED BY QUALIFIED PROFESSIONALA540 Series ground clamps are suitable for installation and use in ordinary and specific hazardous locations (listed in technical specifications section) as defined by NEC NFPA70 and IECEx standard 60079. Installation to be performed by a qualified professional.MechanicalIt is recommended to wall mount the unit using stainless steel or galvanized steel hardware suitable for the monitor’s weight and wall material.ing the bolt pattern provided below, locate a sturdy area, large enough to install the junctionbox.For greatest environmental resistance it is recommended to mount the junction box in theorientation shown. Keep in mind the coiled cable will hang below the box, and the clamp must be stored in an ungrounded position. The enclosure can withstand rain and sun exposure butwill last longer when protected from the elements.2.Level the bolt pattern and drill two holes marked on the pattern.3.Have another person lift the junction box into position in front of the drilled holes.4.Insert the two anchors or bolts into the two mounting holes shown below.5.Tighten all the screws and ensure that the junction box is secure.Electrical•To be installed per NEC NFPA70 requirements for U.S. installations.•Installation in other regions must conform to local electrical codes. Instructions provided below are general guidelines and may not cover local requirements.1.Remove the lid from the A540 junction box.2.Run conduit to junction box. Ensure conduit has sealing fitting at feeder end if installation is inhazardous location.Conduit connection should be sealed from water intrusion through either rubber washers,caulking, or other sealing means.3.Pull cable from process controller into A540 junction box.4.Refer to wiring diagram above, as well as documentation for process controller to properly wirethe process controller to the A540 ground cable.5.Reinstall lid onto junction box.6.Designate an ungrounded location to store the ground clamp while not in use. It is critical thatthe ground clamp be ungrounded while not in use. Storing in a grounded state can lead tounsafe loading conditions.7.Verify proper functionality of system by testing before putting into service.MaintenanceSERVICE SHOULD BE COMPLETED ONLY BY A QUALIFIED HAZARDOUS LOCATION TECHNICIAN. REPLACE PARTS WITH GENUINE DIXON OR APPROVED EQUIVALENT PARTS; SUBSTITUTION MAY IMPAIR INTRINSIC SAFETY.The A540 has few parts that will require regular maintenance and is designed for long service periods. Unsheltered units should be serviced in dry weather to prevent rainwater from entering the enclosure and minimize moisture exposure.1.If the ground connection is becoming intermittent, it is advised to inspect the clamp and cable.2.Dulling of the clamp teeth may be a sign that the clamp has reached the end of its usable lifeand should be replaced. Contact Dixon for replacement parts.3.Checking the cable for a failing conductor can be done by clamping to a known grounded pieceof metal, then flexing the cable. If the ground controller’s indicator changes while flexing thecable, the cable has reached the end of its usable life and should be replaced. Do not attempt to repair the cable. Contact Dixon for replacement parts.a.In the event that the cable does need to be replaced, it can be removed while energized.b.Open the A540 junction box and note the wire positions for each conductor in the A540cable on the terminal block.c.Remove the wires from the terminal block.press the mesh cordgrip by pushing it toward the bottom of the junction box.e.With the cordgrip compressed, the old cable may be pulled out, and new cable installed.f.Once the new cable has been installed into the mesh cordgrip, re-wire the cable into theA540 junction box terminal strip.g.Close the A540 junction box.h.Verify proper functionality of system by testing before putting into service. Replacement partsDescription Part NumberRack Cable with clamp 30585Cord Grip 30708Sealing Fitting; ¾” Vertical 30129ALSealing Compound 30339 for 5 lbs. or 30339-002 for 1 lb.OperationWARNING - USING THE A540 IN A MANNER NOT DEFINED IN THIS MANUAL MAY IMPAIR SAFETY.1.Verify process controller is powered on and idle.2.Test the controller’s operation by clamping to a known grounded piece of metal. Verify thecontroller’s indicator changes from RED to GREEN. Remove the clamp from the test point.3.Before any other electrical connections are made, secure the A540 clamp to the processconnection that is to be loaded.4.Verify the process controller’s indicator changes from RED to GREEN.plete any other process connections.6.Once all other safety measures are active, begin the loading process.7.Once loading is complete, remove all other process connections, then the A540 last.8.Return the A540 clamp to the isolated storage facility, verifying the indicator remains red. WarrantyFor warranty claims and information regarding coverage, please contact Dixon Support at+1 (877) 582-3569Sales and Service ContactsEurope:Dixon Group Europe Ltd.Preston, EnglandPhone: +44 (0) 1772 323529Fax: +44 (0) 1772 314664Email: ************************.ukCanada:Dixon Group Canada Limited Innisfil (Barrie), OntarioPhone: 705-436-1125Fax: 705-436-6251Toll Free: 877-963-4966E-mail: ***************************USA:Dixon Bayco USAChestertown, MarylandPhone: 410-778-2000Fax: 410-778-4702Toll Free: 800-355-1991E-mail: *************************Mexico:Dixva, S. de R.L. de C.V.Monterrey, N.LPhone: 01-800-00-DIXON (34966)Fax: 01-81-8354-8197E-mail: **************************.mxAsia Pacific:Dixon (Asia Pacific) Pty Ltd Wingfield, South AustraliaPhone: +61 8 8202 6000Fax: +61 8 8202 6099E-mail: ************************.au。
INV-DS4050数字字符叠加器说明书

产品介绍1.1产品技术参数产品名称网络数字字符叠加器光电式传感器产品型号INV-DS4050楼层显示器传感器专用型电源类型DC12V±10%DC5V(由叠加器供电)功耗<4W<0.5W工作环境温度-40℃至85℃-55℃至120℃工作相对湿度<90%<90%产品尺寸长150mm×宽130mm×高38mm长70mm×宽55mm×高38mm网络接口10M/100M自适应NA报警输出1路NA1.2产品用途介绍适用于各类安装电梯监控的电梯场所,在不改变电梯原有电器线路的情况下,通过光电传感器对电梯运行状态进行采样,能在电视监视器上指示电梯所在楼层数、运行方向、停止及电梯名称。
准确知道电梯当前所在的楼层有利于用户监控的集中管理,对于出入电梯的人员进行监控,或保留录像以备日后查阅,一旦电梯故障,方便维修人员知道电梯所在楼层,从而及时处理,若有事件发生,也可方便的查阅录像中人员在活动的关键层出入情况;有利于事件的解决。
1.3产品性能介绍1、主机可提供一个电平输出作为报警信号;2、传感器在本产品上直接取电,无需再额外为传感器提供电源;3、无需在原有系统中添加交换机等其他设备;4、采用底层协议对接方式,不会对视频画面的清晰度造成任何干扰;5、可叠加电梯名称(汉字,数字,字母,符号均可);6、电梯运行状态指示:上行、下行、楼层号(楼层号显示内容可以通过设置软件任意变换,例如:将地上5层更名为会议室。
)7、安装方便,只需将该设备的光电传感器安装在电梯轿厢顶部原有传感器组的位置,主机放置在轿厢顶部;8、由于支持采用光电传感器对电梯运行状态进行采样,因而采样稳定准确,设备抗干扰性强,可靠性高;9、使用配套软件,在办公室内只需连接PC机、监视器,就能完成对叠加器参数设置;无须现场调试,方便维护;10、可根据需要设置夹层和跳层,确保显示正确,总层数最多支持到100层;1.4物品清单1、电梯字符叠加器一台2、12V电源适配器一个3、电梯专用传感器一个叠加器硬件安装2.1安装示意图下图为电梯井道剖面示意图:2.2光电传感器的安装先将光电传感器固定在电梯的传感器组上,并保证电梯平层时隔磁板能在光电传感器的“U”型口中。
REF5040资料

FEATURESDESCRIPTION APPLICATIONSInput Signal 0V to 4V12348765DNC(1)NC(2)TRIMDNC(1)V INTEMPGNDV OUTREF50xxSO-8, MSOP-8(3)(1) DNC = Do not connect.(2) NC = No internal connection.(3) MSOP-8 package available Q3, 2007.NOTES:REF5020,,REF5025REF5030,REF5040 REF5045,REF5050SBOS410–JUNE2007 Low-Noise,Very Low Drift,PrecisionVOLTAGE REFERENCE•LOW TEMPERATURE DRIFT:–High-Grade:3ppm/°C(max)The REF50xx is a family of low-noise,low-drift,veryhigh precision voltage references.These references –Standard-Grade:8ppm/°C(max)are capable of both sinking and sourcing,and are •HIGH ACCURACY:very robust with regard to line and load changes.–High-Grade:0.05%(max)Excellent temperature drift(3ppm/°C)and high –Standard-Grade:0.1%(max)accuracy(0.05%)are achieved using proprietary •LOW NOISE:3μV PP/V design techniques.These features,combined withvery-low noise make the REF50xx family ideal for use •HIGH OUTPUT CURRENT:±10mAin high-precision data acquisition systems.•TEMPERATURE RANGE:–40°C to+125°CEach reference voltage is available in both standard-and high-grade versions.They are offered in MSOP-8(available Q3,2007)and SO-8packages,and are •16-BIT DATA ACQUISITION SYSTEMSspecified from–40°C to+125°C.•ATE EQUIPMENT•INDUSTRIAL PROCESS CONTROL REF50xx Family•MEDICAL INSTRUMENTATION MODEL OUTPUT VOLTAGE •OPTICAL CONTROL SYSTEMS REF5020 2.048V •PRECISION INSTRUMENTATION REF5025 2.5VREF5030 3.0VREF5040 4.096VREF5045 4.5VREF5050 5.0VPlease be aware that an important notice concerning availability,standard warranty,and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.All trademarks are the property of their respective owners.ABSOLUTE MAXIMUM RATINGS (1)REF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007This integrated circuit can be damaged by ESD.Texas Instruments recommends that all integrated circuits be handled with appropriate precautions.Failure to observe proper handling and installation procedures can cause damage.ESD damage can range from subtle performance degradation to complete device failure.Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.PACKAGE/ORDERING INFORMATION (1)(1)For the most current package and ordering information see the Package Option Addendum at the end of this document,or see the TI web site at .(2)MSOP-8(DGK)package available Q3,2007.PARAMETER REF50xx UNIT Input Voltage +18V Output Short-Circuit30mA Operating Temperature Range –55to +125°C Storage Temperature Range –55to +150°C Junction Temperature (T J max)+150°C Human Body Model (HBM)3000V ESD Rating Charged Device Model (CDM)1000V(1)Stresses above these ratings may cause permanent damage.Exposure to absolute maximum conditions for extended periods may degrade device reliability.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those specified is not implied.ELECTRICAL CHARACTERISTICS:PER DEVICE REF5020,,REF5025 REF5030,REF5040 REF5045,REF5050SBOS410–JUNE2007Boldface limits apply over the specified temperature range,T A=–40°C to+125°C.At T A=+25°C,I LOAD=0,C L=1μF,and V IN=(V OUT+0.2V)to18V,unless otherwise noted.PER DEVICE PARAMETER CONDITIONS MIN TYP MAX UNITREF5020(V OUT=2.048V)(1)OUTPUT VOLTAGEOutput Voltage V OUT 2.7V<V IN<18V 2.048V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz6μV PPREF5025(V OUT=2.5V)OUTPUT VOLTAGEOutput Voltage V OUT 2.5V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz7.5μV PPREF5030(V OUT=3.0V)OUTPUT VOLTAGEOutput Voltage V OUT 3.0V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz9μV PPREF5040(V OUT=4.096V)OUTPUT VOLTAGEOutput Voltage V OUT 4.096V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz12μV PPREF5045(V OUT=4.5V)OUTPUT VOLTAGEOutput Voltage V OUT 4.5V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz13.5μV PPREF5050(V OUT=5.0V)OUTPUT VOLTAGEOutput Voltage V OUT 5.0V Initial Accuracy:High-Grade–0.050.05% Standard-Grade–0.10.1% NOISEOutput Voltage Noise f=0.1Hz to10Hz15μV PP (1)For V OUT≤2.5V,the minimum supply voltage is2.7V.ELECTRICAL CHARACTERISTICS:ALL DEVICESREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007Boldface limits apply over the specified temperature range,T A =–40°C to +125°C.At T A =+25°C,I LOAD =0,C L =1μF,and V IN =(V OUT +0.2V)to 18V,unless otherwise noted.REF50xxPARAMETERCONDITIONSMIN TYP MAX UNITOUTPUT VOLTAGE TEMPERATURE DRIFT Output Voltage Temperature Drift dV OUT /dTHigh-Grade 2.53ppm/°C Standard-Grade 38ppm/°CLINE REGULATION Line Regulation dV OUT /dV INREF5020(1)Only V IN =2.7V to 18V0.11ppm/V All Other Devices 0.11ppm/V Over Temperature 0.21ppm/V LOAD REGULATION Load Regulation dV OUT /d ILOAD–10mA <I LOAD <+10mA,V IN =V OUT +0.75V2030ppm/mA Over Temperature 50ppm/mA SHORT-CIRCUIT CURRENT Short-Circuit Current I SC V OUT =025mA TEMP PIN Voltage OutputAt T A =+25°C575mV Temperature Sensitivity 2.64mV/°C TURN-ON SETTLING TIME Turn-On Settling Time To 0.1%with C L =1μF200μsPOWER SUPPLY Supply Voltage V SSee Note(1)V OUT +0.2(1)18V Quiescent Current 0.81mA Over Temperature 1.2mATEMPERATURE RANGE Specified Range –40+125°C Operating Range –55+125°CThermal Resistance θJAMSOP-8150°C/W SO-8150°C/W(1)For V OUT ≤2.5V,the minimal supply voltage is 2.7V.TYPICAL CHARACTERISTICS0.20.50.71.01.21.51.72.02.22.52.73.03.23.53.74.04.24.54.75.0Drift (ppm/C)°P o p u l a t i o n (%)0.51.01.52.02.53.03.54.04.55.05.56.06.57.07.58.0Drift (ppm/C)°P o p u l a t i o n (%)-50-25T emperature (C)°0.050.040.030.020.010-0.01-0.02-0.03-0.04-0.05O u t p u tV o l t a g e A c c u r a c y (%)125255075100-0.0-0.0-0.0-0.0-0.00.00.00.00.00.0Drift (ppm/C)°P o p u l a t i o n (%)10Frequency (Hz)160140120100806040200P S R R (d B )100k1001k10k-15-10-5Load Current (mA)0.80.70.60.50.40.30.20.10D r o p o u t V o l t a g e (V )150510+125C°+25C °-°40CREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007At T A =+25°C,I LOAD =0,and V S =V OUT +0.2V,unless otherwise noted.For V OUT ≤2.5V,the minimum supply voltage is 2.7V.TEMPERATURE DRIFTTEMPERATURE DRIFT (0°C to +85°C)(–40°C to +125°C)Figure 1.Figure 2.OUTPUT VOLTAGE OUTPUT VOLTAGE ACCURACYINITIAL ACCURACYvs TEMPERATUREFigure 3.Figure 4.POWER-SUPPLY REJECTION RATIOvs FREQUENCYDROPOUT VOLTAGE vs LOAD CURRENTFigure 5.Figure 6.-10-5Load Current (mA)2.501252.501002.500752.500502.500252.500002.499752.499502.499252.499002.49875O u t p u t V o l t a g e (V )105+125C°+25C°-°40C -50-25T emperature (C)°0.90.80.70.60.50.40.3T E M P P i n O u t p u t V o l t a g e (V )125255075100-50-25T emperature (C)°10501000950900850800750700650600Q u i e s c e n t C u r r e n t (m A )125255075100-50-25T emperature (C)°0.50.40.30.20.10-0.1-0.2-0.3-0.4-0.5L i n e R e g u l a t i o n (p p m /V )1252550751001s/div1V /d i vm -50-25T emperature (C)°35302520151050S h o r t -C i r c u i t C u r r e n t (m A )125255075100REF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007TYPICAL CHARACTERISTICS (continued)At T A =+25°C,I LOAD =0,and V S =V OUT +0.2V,unless otherwise noted.For V OUT ≤2.5V,the minimum supply voltage is 2.7V.REF5025OUTPUT VOLTAGETEMP PIN OUTPUT VOLTAGEvs LOAD CURRENTvs TEMPERATUREFigure 7.Figure 8.QUIESCENT CURRENT LINE REGULATION vs TEMPERATUREvs TEMPERATUREFigure 9.Figure 10.SHORT-CIRCUIT CURRENTvs TEMPERATURENOISEFigure 11.Figure 12.40s/div m 2V/div1V/divV OUTV IN400s/divm 5V/div1V/divV OUTV IN20s/div m -1mA-1mA+1mAI LOADV OUT5mV/div1mA/div20s/divm -10mA+10mA+10mAI LOAD V OUT2mV/div10mA/div100s/div m -1mA-1mA+1mAI LOAD V OUT5mV/div1mA/div100s/divm -10mA-10mA+10mAI LOAD V OUT2mV/div10mA/divREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007TYPICAL CHARACTERISTICS (continued)At T A =+25°C,I LOAD =0,and V S =V OUT +0.2V,unless otherwise noted.For V OUT ≤2.5V,the minimum supply voltage is 2.7V.STARTUPSTARTUP(REF5025,C =1μF)(REF5025,C =10μF)Figure 13.Figure 14.LOAD TRANSIENT LOAD TRANSIENT (C L =1μF,I OUT =1mA)(C L =1μF,I OUT =10mA)Figure 15.Figure 16.LOAD TRANSIENT LOAD TRANSIENT (C L =10μF,I OUT =1mA)(C L =10μF,I OUT =10mA)Figure 17.Figure 18.20m s/div V OUTV IN5mV/div500mV/div100s/divm V OUTV IN5mV/div500mV/divREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007TYPICAL CHARACTERISTICS (continued)At T A =+25°C,I LOAD =0,and V S =V OUT +0.2V,unless otherwise noted.For V OUT ≤2.5V,the minimum supply voltage is 2.7V.LINE TRANSIENTLINE TRANSIENT (C L =1μF)(C L =10μF)Figure 19.Figure 20.APPLICATION INFORMATIONSUPPLY VOLTAGEOUTPUT ADJUSTMENT (TRIM Pin)BASIC CONNECTIONSTEMPERATURE DRIFTDrift +ǒVOUTMAX*V OUTMINV OUT Temp RangeǓ106(ppm)(1)REF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007The REF50xx is family of low-noise,precision bandgap voltage references that are specifically designed for excellent initial voltage accuracy and The REF50xx family of voltage references features drift.Figure 21shows a simplified block diagram of extremely low dropout voltage.With the exception of the REF50xx.the REF5020,which has a minimum supply requirement of 2.7V,these references can be operated with a supply of 200mV above the output voltage in an unloaded condition.For loaded conditions,a typical dropout voltage versus load plot is shown in Figure 6of the Typical Characteristics.The REF50xx provides a very accurate voltage output.However,V OUT can be adjusted from the nominal value for the purpose of trimming system errors by configuring the TRIM pin (pin 5).The TRIM pin provides for adjustment of the voltage at V OUT over a ±15mV range.Figure 23shows a typical circuit using the TRIM pin to adjust V OUT .When using this technique,the temperature coefficients of the resistors can degrade the temperature drift at the output.Figure 21.REF50xx Simplified Block DiagramFigure 22shows the typical connections for the REF50xx.A supply bypass capacitor ranging between 1μF to 10μF is recommended.A 1μF to 50μF,low-ESR output capacitor (C L )must be connected to V OUT .Figure 23.V OUT Adjustment Using the TRIM PinThe REF50xx is designed for minimal drift error,which is defined as the change in output voltage over temperature.The drift is calculated using the box method,as described by the following equation:Figure 22.Basic ConnectionsThe REF50xx features a maximum drift coefficient of 3ppm/°C for the high-grade version,and 8ppm/°C for the standard-grade.TEMPERATURE MONITORINGPOWER DISSIPATIONNOISE PERFORMANCEREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007The temperature output terminal (TEMP,pin 3)The REF50xx family is specified to deliver current provides a temperature-dependent voltage output loads of ±10mA over the specified input voltage with approximately 60k Ωsource impedance.As seen range.The temperature of the device increases in Figure 8,the output voltage follows the nominal according to the equation:relationship:T J =T A +P D ×θJAV TEMPPIN=509mV +2.64×T(°C)Where:T J =Junction temperature (°C)This pin indicates general chip temperature,accurate to approximately ±15°C.Although it is not generally T A =Ambient temperature (°C)suitable for accurate temperature measurements,it P D =Power dissipated (W)can be used to indicate temperature changes or for θJA =Junction-to-ambient thermal resistance temperature compensation of analog circuitry.A (°C/W)temperature change of 30°C corresponds to an approximate 79mV change in voltage at the TEMP The REF50xx junction temperature must not exceed pin.the absolute maximum rating of +150°C.The TEMP pin has high output impedance (see Figure 21).Loading this pin with a low-impedance circuit induces a measurement error;however,it does Typical 0.1Hz to 10Hz voltage noise for each member not have any effect on V OUT accuracy.To avoid of the REF50xx family is specified in the Electrical errors caused by low-impedance loading,buffer the Characteristics:Per Device table.The noise voltage TEMP pin output with a suitable low-temperature drift increases with output voltage and operating op amp,such as the OPA333,OPA335,or OPA376,temperature.Additional filtering can be used to as shown in Figure 24.improve output noise levels,although care should be taken to ensure the output impedance does not degrade performance.Figure 24.Buffering the TEMP Pin OutputAPPLICATION CIRCUITSDATA ACQUISITIONNEGATIVE REFERENCE VOLTAGEREF5020,,REF5025REF5030,REF5040REF5045,REF5050SBOS410–JUNE 2007Data acquisition systems often require stable voltage For applications requiring a negative and positive references to maintain accuracy.The REF50xx family reference voltage,the REF50xx and OPA735can be features low noise,very low drift,and high initial used to provide a dual-supply reference from a 5V accuracy for high-performance data converters.supply.Figure 25shows the REF5025used to Figure 26shows the REF5040in a basic data provide a 2.5V supply reference voltage.The low drift acquisition system.performance of the REF50xx complements the low offset voltage and zero drift of the OPA735to provide an accurate solution for split-supply applications.Care must be taken to match the temperature coefficients of R 1and R 2.Figure 26.Basic Data Acquisition SystemFigure 25.The REF5025and OPA735Create Positive and Negative Reference VoltagesPACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)REF5020AID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5020AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5020AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5020AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5020ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5020IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5020IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5020IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025AID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5025AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5025ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5025IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030AID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5030AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5030ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5030IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5040AIDACTIVESOICD875Green (RoHS &no Sb/Br)CU NIPDAULevel-2-260C-1YEAR12-Oct-2007Orderable Device Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)REF5040AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5040AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5040AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5040ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5040IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5040IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5040IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045AID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5045AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5045ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5045IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050AID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050AIDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050AIDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5050AIDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)Call TI Level-2-260C-1YEAR REF5050ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF5050IDRG4ACTIVESOICD82500Green (RoHS &no Sb/Br)CU NIPDAULevel-2-260C-1YEAR(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.12-Oct-2007OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.12-Oct-2007TAPE AND REEL BOXINFORMATIONDevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant REF5020AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5020IDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5025AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5025IDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5030AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5030IDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5040AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5040IDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5045AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5045IDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5050AIDR D 8SITE 4133012 6.4 5.2 2.1812Q1REF5050IDRD8SITE 41330126.45.22.1812Q17-Nov-2007DevicePackagePins Site Length (mm)Width (mm)Height (mm)REF5020AIDR D 8SITE 41346.0346.029.0REF5020IDR D 8SITE 41346.0346.029.0REF5025AIDR D 8SITE 41346.0346.029.0REF5025IDR D 8SITE 41346.0346.029.0REF5030AIDR D 8SITE 41346.0346.029.0REF5030IDR D 8SITE 41346.0346.029.0REF5040AIDR D 8SITE 41346.0346.029.0REF5040IDR D 8SITE 41346.0346.029.0REF5045AIDR D 8SITE 41346.0346.029.0REF5045IDR D 8SITE 41346.0346.029.0REF5050AIDR D 8SITE 41346.0346.029.0REF5050IDRD8SITE 41346.0346.029.07-Nov-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. 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GSM无线参数简介

无线参数简介1 无线资源各管理对象的包含关系图 (4)2 管理对象参数介绍 (4)2.1 BSC参数 (4)2.1.1 MCC 移动国家号码 (4)2.1.2 MNC 移动网号 (4)2.1.3 InterHo BSC控制小区间切换 (5)2.1.4 IntraHo 是否允许小区内切换 (5)2.1.5 OverLevel 流量控制策略 (5)2.1.6 T1 闭塞/解闭塞周期 (6)2.1.7 T3 7号瞬断的保护时间 (6)2.1.8 T4 全局复位周期 (6)2.1.9 T7 切换请求的保护周期 (7)2.1.10 T8 源BSC切换执行周期 (8)2.1.11 T10 指派周期 (9)2.1.12 T13 全局复位保护周期 (10)2.1.13 T17 流量控制第一过载周期(并入mT11) (11)2.1.14 T18 流量控制第二过载周期(并入mT12) (11)2.1.15 T19 BSS侧电路复位周期 (12)2.1.16 T20 电路群闭塞/解闭塞周期 (12)2.1.17 T9101 监督RLSD消息的接收 (13)2.1.18 T9103 (13)2.1.19 T9104 监督MSC过来的CLEAR COMMAND命令 (14)2.1.20 T9105 监督SCCP连接过程 (15)2.1.21 T9113 监视在目标小区中的外部切换 (15)2.1.22 zxgT1 信道激活保护时间 (16)2.1.23 zxgT2 源实例信道申请保护时间 (17)2.1.24 zxgT3 建链响应保护时间 (17)2.1.25 zxgT4 等待P0对HO COM或ASS COM消息确认的保护时间 (17)2.1.26 zxgT5 监督加密模式修改过程 (17)2.1.27 zxgT6 监督SAPI3建链 (18)2.1.28 zxgT7 等待P0响应指配或切换完成消息的保护时间 (18)2.1.29 zxgT8 切出时HoCmd(to Um)-ClearCmd(from P0) (19)2.1.30 zxgT9 RF Channel Release保护时间 (19)2.1.31 zxgT11 指配排队周期 (19)2.1.32 rmsTqho 切换排队周期 (19)2.1.33 zxgT12 周期性状态证实间隔 (20)2.1.34 zxgT13 监督BTS和MS的模式修改过程 (20)2.1.35 zxgT14 从目标实例发Ass/Ho Com到收到Ass/Ho Com Ack (20)2.1.36 zxgT15 强拆时目标实例等待资源可用时间 (21)2.1.37 zxgT16 定向重试等待时间 (21)2.1.38 zxgmT11 流量控制第一过载时间 (21)2.1.39 zxgmT12 流量控制第二过载时间 (21)2.1.40 Tmirco 微微切换的延时定时器 (22)2.1.41 Tbsic BSIC 解码周期 (22)2.1.42 aisT1 P0指派保护定时器 (22)2.1.43 aisT4 外部切入等待资源保护定时器 (22)2.1.44 aisT8 OutGoHoing状态保护定时器 (23)2.1.45 aisT12 Serving状态保护定时器 (23)2.1.46 BCRT 系统消息广播常规定时器 (23)2.1.47 BCPT 系统消息广播等待FUC应答保护定时器 (23)2.1.48 T3101 立即指派周期 (23)2.1.49 T3103 源小区切换周期 (24)2.1.50 T3107 指派周期 (25)2.1.51 T3109 信道释放周期 (27)2.1.52 T3111 信道去活延时 (28)2.1.53 BMRN BSC复位过程最大重复次数 (29)2.1.54 CMRN 电路复位过程最大重复次数 (29)2.1.55 ConfuMsg 混乱消息 (29)2.1.56 RIndThs 自发指示的门限值 (29)2.1.57 LoadInd 负载指示 (30)2.1.58 LVT 负载有效时间 (30)2.1.59 LIP 负载指示周期 (30)2.1.60 EDRAF 外部定向重试是否允许发送指派失败 (31)2.1.61 ACE 是否允许BSC自己分配地面电路 (31)2.1.62 LocName BSC的位置信息 (31)2.2 B TS(小区)参数 (31)2.2.1 CellType 小区类型 (31)2.2.2 LAC 位置区码 (32)2.2.3 CI 小区识别码 (32)2.2.4 NCC 网络色码 (32)2.2.5 BCC 基站色码 (32)2.2.6 GsmInd 小区的频率带 (32)2.2.7 BCCH 小区BCCH绝对载频号 (33)2.2.8 CA 小区频率集(非BCCH) (33)2.2.9 CcchCfg 公共控制信道配置 (33)2.2.10 T3212 周期性位置更新定时器 (34)2.2.11 MRLTO MS检验无线链路失败的计数器S的最大值 (34)2.2.12 BRLTO BTS检验无线链路失败的计数器S的最大值 (35)2.2.13 T3122 接入尝试的保护周期 (35)2.2.14 PlmnPmt 允许的网络色码 (35)2.2.15 CRH 小区重选滞后 (36)2.2.16 RxLAMin 允许接入的最小接收电平 (36)2.3 R ADIO C ARRIER(载频)参数 (37)2.3.1 PwrClass 对应载频的功率等级 (37)2.3.2 TxPwrRed 功率调整参数 (37)2.3.3 RcList 射频跳频频点列表 (37)2.4 C HANNEL参数 (38)2.4.1 ARFCN 信道对应的频点 (38)2.4.2 ChComb 信道组合方式 (38)2.4.3 TSC 训练序列码 (38)2.5 H ANDOVER C ONTROL参数 (39)2.5.1 HInMin 小区间切换最小间隔 (39)2.5.2 RxLevMin 最小接收强度等级 (39)2.5.3 HoMargin PBGT切换最小门限 (39)2.6 P OWER C ONTROL(功率控制)参数 (40)2.6.1 PCUL 是否上行功率控制 (40)2.6.2 PCDL 是否下行功率控制 (40)2.6.3 MTPMax MS最大功率电平 (40)2.6.4 MTPMin MS最小功率电平 (40)2.6.5 BTPMin BS最小功率电平 (41)3 问题及回答 (41)4 附录 (42)4.1 前后台参数对照表 (42)4.1.1 BSC参数 (42)4.1.2 Bts参数 (45)4.1.3 HandoverControl参数 (51)4.1.4 PowerControl参数 (56)1无线资源各管理对象的包含关系图2管理对象参数介绍2.1BSC参数2.1.1MCC 移动国家号码描述:MCC由三位十进制数组成。
IFR4905

IRF4905HEXFET ® Power MOSFETFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Parameter Max.UnitsI D @ T C = 25°C Continuous Drain Current, VGS @ -10V -74I D@ T C = 100°C Continuous Drain Current, V GS @ -10V -52A I DMPulsed Drain Current -260P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage ± 20V E A S Single Pulse Avalanche Energy 930mJ I AR Avalanche Current -38A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and -55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 screw10 lbf in (1.1N m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case0.75R θCS Case-to-Sink, Flat, Greased Surface 0.50 °C/WR θJAJunction-to-Ambient62Thermal Resistancel Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switching l P-ChannellFully Avalanche RatedDescription05/24/07PD - 91280DIRF4905Repetitive rating; pulse width limited bymax. junction temperature. ( See fig. 11 )I SD ≤ -38A, di/dt ≤ -270A/µs, V DD ≤ V (BR)DSS ,T J ≤ 175°CNotes:Starting T J = 25°C, L = 1.3mH R G = 25Ω, I AS = -38A. (See Figure 12)Pulse width ≤ 300µs; duty cycle ≤ 2%.Source-Drain Ratings and CharacteristicsIRF4905Fig 4. Normalized On-ResistanceVs. TemperatureFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics11010010000.1110100D DS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)11010010000.1110100D DS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)110100100045678910GS D -I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Gate-to-Source Voltage (V)0.00.51.01.52.0-60-40-2020406080100120140160180JT , Junction Temperature (°C)R , D ra i n -t o -S o u r c e O n R e s i s t a n c e D S (o n)(N o r m a l i z e d )Fig 2. Typical Output CharacteristicsIRF4905Fig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage01000200030004000500060007000110100C , C a p a c i t a n c e (p F )DS -V , Drain-to-Source Voltage (V)0481216204080120160200GGS -V , G a t e -t o -S o u r c e V o l t a ge (V )Q , Total Gate Charge (nC)11010010000.40.60.81.01.21.41.61.8SD S D -I , R e v e r s e D r a i n C u r r e n t (A )-V , Source-to-Drain Voltage (V)1101001000110100-I , D r a i n C u r r e n t (A )-V , Drain-to-Source Voltage (V)DSDIRF4905Fig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsFig 9. Maximum Drain Current Vs.Case TemperatureV DDV VIRF4905Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche EnergyVs. Drain CurrentV-10VDSCurrent Sampling ResistorsFig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test CircuitI ASV DD05001000150020002500255075100125150175JE, S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )AS Starting T , Junction Temperature (°C)IRF4905 Peak Diode Recovery dv/dt Test CircuitV DD* Reverse Polarity of D.U.T for P-ChannelV GS*** V GS = 5.0V for Logic Level and 3V Drive DevicesFig 14. For P-Channel HEXFETSQualification Standards can be found on IR’s Web site. 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903 Visit us at for sales contact information. 05/07Note: For the most current drawings please refer to the IR website at:/package/。
STM32F050

■ Communication interfaces – 1 x I2C interface; supporting Fast Mode Plus (1 Mbit/s) with 20 mA current sink, SMBus/PMBus, and wakeup from STOP – 1 x USART supporting master synchronous SPI and modem control; one with ISO7816 interface, LIN, IrDA capability auto baud rate detection and wakeup feature – 1 x SPI (18 Mbit/s) with 4 to 16 programmable bit frames, with I2S interface multiplexed
3.5.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.5.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ly schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.5.2 Power supply supervisors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
IC datasheet pdf-OPA4830,pdf(Quad, Low-Power, Single-Supply, Wideband Operational Amplifier)

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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OPA4830
.................................................................................................................................................... SBOS350A – DECEMBER 2006 – REVISED MAY 2008
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a r X i v :a s t r o -p h /0604158v 3 8 J a n 2007Astronomy &Astrophysics manuscript no.Corsi cESO 2008February 5,2008XRF 050406late-time flattening:an inverse Compton component?A.Corsi 1,2,3and L.Piro 11IASF-Roma /INAF,Via Fosso del Cavaliere 100,00133Roma,Italy.2Universit`a degli studi di Roma “La Sapienza”,Piazzale Aldo Moro 5,00185Roma,Italy.3INFN -Sezione di Roma c /o Dip.di Fisica -Universit`a degli studi di Roma “La Sapienza”,Piazzale Aldo Moro 5,00185Roma,Italy.ABSTRACTAims.We investigate for possible evidence of inverse Compton (IC)emission in the X-ray afterglow of XRF 050406.Methods.In the framework of the standard fireball model,we show how the late-time flattening observed in the X-ray light curve between ∼104s and ∼106s can be explained in a synchrotron-plus-IC scenario when the IC peak frequency crosses the X-ray band.Results.We thus conclude that the appearance of an IC component above the synchrotron one at late times successfully accounts for these X-ray observations.Key words.Gamma rays:bursts –X-rays:Individuals (XRF 050406)–X-rays:bursts –radiation mechanisms:non-thermal1.IntroductionThe “Burst Alert Telescope”(BAT;Barthelmy et al.2005)on board Swift (Gehrels et al.2004)was triggered by GRB 050406on April 6,2005,at 15:58:48.40UT (Parsons et al.2005).The BAT located the burst at RA =02h 17m 53s and Dec =−50◦10′52′′(J2000),with an uncertainty of 3arcmin (Krimm et al.2005).The photon index of the 15−350keV time-averaged spectrum was Γ=2.38±0.34(Krimm et al.2005).Because of the spec-tral softness,this burst was classified as an X-ray flash (XRF;Heise et al.2001).The 15−350keV fluence was(1.0+1.13−0.36)×10−7ergs cm −2(Romano et al.2006).Assuming a redshift of z =2.44(Schady et al.2006),the isotropic energy release was ∼1.4×1051ergs.The “X-Ray Telescope”(XRT;Burrows et al.2005a)im-aged the BAT field starting from 84s after the trigger,and the X-ray counterpart of XRF 050406was found during the on-ground analysis (Cusomano et al.2005;Capalbi et al.2005).The “Ultra-Violet /Optical Telescope”(UVOT;Roming et al.2005)also started imaging about 88s after the trigger.The optical afterglow was not detected on-board (Landsman et al.2005),but subsequent on-ground analysis revealed a source within the XRT error circle (Rol et al.2005).Late-time ob-servations (∼7.8hr after the burst)performed by the Magellan /Clay Telescope revealed a single faint source (R =22.0±0.09)located at RA =02h 17m 52s .3and Dec =−50◦11′15′′(J2000;Berger et al.2005a,b).2 A.Corsi and L.Piro:XRF050406:an IC component?Table1.Closure relationships between the X-ray afterglow spectral and temporal indices(β=1.1±0.3,α1=1.58±0.17)of XRF050406in the standard synchrotronfireball model for a wind or ISM environment.In parenthesis:relationships in an ISM modified for the effect of IC cooling.The(u)marks those relationships that are not affected by IC emission.ISM environment Wind environmenta)νc<νX<νm2α−β=0(u)2.1±0.42α+β−1=03.3±0.5c)νm<νX<νc2α−3β=0(u)−0.14±0.962α−3β−1=0−1.1±1.02(2−β)=0)0.86±0.96(0.48±0.31)2α−3β+1=00.86±0.96f(2.5)(1+z)1/2ǫ1/2B,−2ǫ2e,0.5E1/252t−3/2dHz(1)is the injection frequency,with f(p)= p−2ǫe /ǫB in the fast-cooling regime and x∼√1These expressions for x are valid if x2>>1(Sari&Esin2001).A.Corsi and L.Piro:XRF050406:an IC component?3 x does not depend on time,thus the temporal decay index atfrequencies aboveνc does not change(cases a)and b)).On the basis of the closure relationships,scenarios b),c),and d)are compatiblewith the observations in both an ISMand a wind environment(Chevalier&Li1999).Hereafter,wewill limit our discussion to the ISM case.We have seen in Sect.2that the optical-to-X-ray spectralindex before theflare is ratherflat.In a standard synchrotronscenario,such aflat value cannot be explained unless the syn-chrotron peak frequency is between the optical and the X-rayband.In Fig.1we show that settingνc(100s)∼0.03keV(peak frequency between the optical and the X-ray band)andνm(100s)∼0.2keV(case b)in Table1),marginal consistencywith the data can be obtained.However,under these conditions,νm crosses the V-band around2×103s;until that time,the lightcurve(Fig.1)features a rise,while XFR050406was no longervisible at∼600s above the background(Schady et al.2006),suggesting a progressive fading of the optical afterglow(the V-band upper-limits adopted here are standard3σupper-limits,thus the corresponding limitingfluxes are3times higher thanthe1σupper-limits reported by Schady et al.2006).Note alsothat in a synchrotron scenario,β 0.5at frequencies above thepeak one.Sinceνc(100s)∼0.03keV andνm(100s)∼0.2keVimplyβ=0.5forνc≤ν≤νm=0.2keV,in Fig.1we areminimizing the peak-flux value required tofit the optical andX-ray data at100s,thus minimizing the rise in the opticalfluxobserved until the peak frequency is above the optical band.To account for a decreasing optical emission,the syn-chrotron peak frequency should be below the optical band.Inthis case,tofit the early X-ray afterglow while overestimatingas little as possible the opticalflux around∼100s,the bestchoice is to setνc(100s)≤1014Hz andνm(100s)∼0.2keV(case b)in Table1).In fact,thenβopt−X=0.5,which is theflat-test value allowed in a standard synchrotron scenario when thepeak frequency is below the optical band(and p>2).Underthese assumptions,normalizing to the observed X-rayflux at100s,the predicted V-bandflux is overestimated for a factorof∼ 5.In the R-band,the predicted light curve will decreaseas t−1/4until the time at whichνm crosses the band(∼2300s)and as t−34up to the time of the Magellan/Clay obser-vation(t∼3×104s).Since in this case the measured X-ray spectral and temporal indices imply p =2.5±0.3,thent−34=t−1.375,and we expect the predicted R-bandflux tobe around a factor of∼2above the Magellan/Clay data point.Requiring additional extinction in the GRB host galaxy or acontribution to the early X-rayflux coming from the rising partof theflare(or a combination of these two effects)helps ac-count for the broad-band observations,as we see in the follow-ing section.3.2.IC componentTo model the observed early-time emission within the syn-chrotronfireball model we choose scenario b)of Table1withνc(100s)≤1014Hz andνm(100s)∼0.2keV.We thus setp=2.5.Fig.1.0.2−10keV(upper panel,solid line),V-band(lowerpanel,dotted line),and R-band(lower panel,dashed line)lightcurves in a standard synchrotronfireball model withǫB=0.19,ǫe=6.3×10−2,E52=0.5,n=0.1,p=2.5,so as tofitthe observed optical and X-rayfluxes at100s,i.e.to satisfythe conditionsνm(100s)∼0.2keV,νc(100s)∼0.03keV(seetext).The0.2−10keV data points(upper panel,crosses),theV-band data points(lower panel,triangles),and the the R-banddata point(lower panel,box)are taken from Romano et al.(2006),Schady et al.(2006),and Berger et al.(2005a),respec-tively.The R-band light curve and data point have been shifteddown by a factor of10for clarity.To model theflattening observed in the X-ray afterglowat late times,we add the contribution of an IC component.Following the prescriptions given by Sari&Esin(2001),theIC spectrum is modeled as a power-law spectrum similar tothe synchrotron one,plus logarithmic corrections when rele-vant in the considered regime.In the power-law approxima-tion,the IC spectrum is normalized to a peak-flux value off IC max=2×10−7f max n(R/1018),where f max is the peakfluxof the synchrotron component and R is thefireball radius in cm(Sari&Esin2001).To constrain the values of E52,n,ǫe,ǫB that reliably cir-cumscribe the portion of parameter space compatible with thescenario we are testing,we set the following conditions:0.1keV νm(100s) 0.3keV,(3)4 A.Corsi and L.Piro:XRF050406:an IC component?Fig.2.The shadowed regions are the parts of theǫB-ǫe plane where the conditions expressed by Eq.(3)(dotted lines),Eq.(4) (dashed line),Eq.(5)(solid lines),Eq.(6)(dash-dotted lines),Eqs.(7)and(8)(dash-dot-dot-dotted lines)are simultaneously satisfied,for E52=5and n=100(upper-left panel),E52=5and n=150(upper-right panel),E52=5and n=200(lower-left panel),and E52=10and n=100(lower-right panel).The long-dashed line marks the portion of theǫB-ǫe plane where x= ǫeǫB 1/2 106s2(4−p)>10if t IC0<106,so as to assure that x>1up to106s,which is necessary for the consistency of our formulation(Sari&Esin2001).νc(100s) 1014Hz,(4)50×10−3mJy f syn0.2keV(100s) 70×10−3mJy,(5)where f syn0.2keV (100s)=f synmax 0.2keVνc(100s) −0.50.2keVA.Corsi and L.Piro:XRF050406:an IC component?5Fig.3.Synchrotron-plus-IC model predictions for the0.2−10keV light curve withǫB=1.9×10−4,ǫe=0.25,E52=5,n=100, p=2.5.The dash-dotted line represents the synchrotron component,while the dash-dot-dot-dotted line the IC one.The solid line is the resulting totalflux.The model predictions are compared with the0.2−10keV data points(crosses)by Romano et al. (2006).no local extinction is added,the predicted V-and R-bandfluxesare overestimated of a factor of∼5and∼2.4,respectively.In a“Small Magellanic Clouds”(SMC)-like environment(Pei1992),an intrinsic extinction of A(V int)∼0.32mag in theGRB site(at z=2.44)allows consistency to be recoveredwith the optical data(Fig.4,upper panel);this implies an ab-sorption column density of N H∼0.32×1.6×1022cm−2.Insuch an environment,due to the lower metallicity,the upper-limit of9×1020cm−2set by the XRT analysis should beincreased by a factor of∼7(Stratta et al.2004),and thusthe required N H should be compared with this increased limit.The numerical test that guided us infinding this solution wasrepeated for E52=0.5,1,2,3,5,10,combined withn=10,50,100,150,200,250,300,350,400.Solutionsare found for E52=3,5,10(Fig.5,right-to-left)and forn=100,150,200.If before the X-rayflare(say t 300s)there is some con-tribution from the rising part of theflare itself(as one may ex-pect in a late internal shock scenario),we can relax the normal-ization condition to some extent.Settingνm(300s)∼0.2keV(so as to reproduce the observed X-ray spectral and tempo-ral indices after theflare for p=2.5)and normalizing thesynchrotron spectrum tofit the observed X-rayflux level at∼300s,the0.2keV light curve at t 300s will rise slowly(ast−1/4),and the0.2keVflux at100s will be lowered by a factorof(300s/100s)−1/46 A.Corsi and L.Piro:XRF 050406:an ICcomponent?Fig.4.Synchrotron-plus-IC model predictions compared with the observed data in the case ǫB =1.9×10−4,ǫe =0.25,E 52=5,n =100,p =2.5(upper panel)and ǫB =9×10−4,ǫe =0.36,E 52=1,n =350,p =2.5(lower panel).In the upper panel,the V -band (dotted line)and R -band (dashed line)light curves include a SMC-like local (z =2.44)extinction of A (V int )∼0.32mag;in the lower panel,the V -band (dotted lines)and R -band (dashed lines)light curves include an SMC-like extinction of A (V int )∼0.13mag (thick lines)or a Galactic-like A (V int )∼0.15mag (thin lines).In both panels the R -band light curve and data point have been shifted down by a factor of 10for clarity.logarithmic corrections to the IC spectrum are significant be-tween 0.2−10keV ,and they have been added to the power-law approximation.The IC spectrum has beennormalized to apeak-flux value of f ICmax =14/45×f max σT n R (Sari &Esin 2001),where σT is the Thompson cross section.In the optical band (Fig.4,lower panel),the addition of a Galactic-like extinction term (Cardelli et al.1989,with R V =3.1),with A (V int )∼0.15mag in the GRB site (z =2.44),allows us to explain both the R -and V -band observations.A SMC-like environment with A (V int )∼0.13mag could also be an alternative solution.The implied values of the local N H are ∼0.15×1.79×1021cm −2and ∼0.13×1.6×1022cm −2,both fully compatible with the upper-limit from the X-ray analysis.(For an SMC-like environment,as already noted,this upper-limit should be increased by a factor of ∼7.)Fig.5.Numerical test results showing for which values of ǫB and ǫe the conditions expressed by Eqs.(3)to (8)are simul-taneously satisfied (and x >10up to 106s).We repeated this search for E 52=0.5,1,2,3,5,10combined with n =10,50,100,150,200,250,300,350,400.Solutions are found for E 52=3and n =100,150,200(shadowed re-gion on the right);E 52=5and n =100,150,200(shadowed region in the center);E 52=10and n =100,150,200(shad-owed region on the left).The three regions represent,for each value of E 52,the superposition of regions similar to those rep-resented in Fig.2,each corresponding to one value of n among the ones allowed for the considered value of E 52.For exam-ple,the central region is the superposition of the three regions shown in the upper-left,upper-right,and lower-left panels of Fig.2.We can finally focus on the spectral predictions of the model we are proposing to explain the XRF 050406late-time flattening.In a synchrotron-plus-IC scenario,since the lightcurve flattening is associated with νICm crossing the X-ray band,the spectral index should vary between the values of −1/3(fort 105s the X-ray band is below νICc)and ∼(p −1)/2for the first solution proposed here (Fig.3)and between 0.5(for2×104s t 2×105s the X-ray band is between νICc and νICm )and p /2(plus logarithmic term corrections)for the second solution (Fig.7).The predicted mean spectral indices between 2.0×104s and 106s are <β>∼0.4and <β>∼0.8for the first and second solutions,paring those val-ues with the mean spectral index of β=1.1±0.3,measured before the flattening (Romano et al.2006),it is evident that a hardening should be observed at late times.For XRF 050406,about 60source counts were collected between ∼2.0×104s and ∼106s,so that a detailed spec-tral analysis cannot be performed.A ratio of 1.8±0.5between hard (H :0.2−1.0keV)and soft (S :1.0−10keV)pho-tons in the whole interval time is the only information that one can get from this faint source (private communication by P.Romano,2006).Comparing this with 0.5 H /S 1.0ob-tained by Romano et al.(2006)after the flare (see the lowest panel in Fig.3of Romano et al.2006),the spectrum during the late-time flattening seems to be harder,but no firm con-A.Corsi and L.Piro:XRF050406:an IC component?7Fig.6.The shadowed regions are the parts of theǫB-ǫe planewhere the required conditions(see text)are simultaneouslysatisfied(and x>10up to106s).Solutions are found forE52=0.5and n=350,400(upper-left panel),E52=1andn=200,250,300,350,400(upper-right panel),E52=2andn=150,200,250,300,350(lower-left panel),and E52=3and n=150,200(lower-right panel).clusion can be reached due to the large errors.Since hard-ening is a natural expectation in a synchrotron-plus-IC sce-nario,we then investigated on the compatibility of our pre-dictions with the observed H/ing the XRT PC response2(Grade0-12,on-axis counts,infinite extraction region),assum-ing N H=2.8×1020cm−2,and normalizing the spectrum so asto have about60counts in total,we computed a rough estimateof the expected H/S ratio for a spectrum with<β>∼0.4and<β>∼0.8,obtaining H/S=2.4±0.7and H/S=1.5±0.4for the two spectra3;those values of H/S are both compatiblewith the observed value of1.8±0.5within the errors.Althougha conclusive statement is not allowed,encouraging indicationsin favor of the present model as a mechanism for the late-timeflattening arise globally.We thus conclude that future observations of brightersources,possibly allowing performance of time-resolved spec-troscopy during the late-timeflattening,will be a key to con-firming or rejecting the scenario we are suggesting and its po-tential extension as a general explanation for this kind of late-time behavior in GRB X-ray light curves.8 A.Corsi and L.Piro:XRF050406:an ICcomponent?Fig.7.Synchrotron plus IC model predictions for the0.2−10keV light curve withǫB=9×10−4,ǫe=0.36,E52=1,n=350, p=2.5,compared with the observed data(crosses).The dash-dotted line is the contribution from the synchrotron component while the dash-dot-dot-dotted line the one from IC emission.The solid line is the resulting totalflux.Landsman,W.,Hunsberger,S.,Breeveld,A.,et al.2005,GRBCoordinates Network,3182Nousek,J.A.,Kouvelioutou,C.,Grupe,D.,et al.2006,ApJ,642,389Panaitescu,A.&Kumar,P.2000,ApJ,543,66Parsons,A.,Barthelmy,S.,Cummings,J.,et al.2005,GRBCoordinates Network,3180Pei,Y.C.1992,ApJ,395,130Piro,L.,De Pasquale,M.,Soffitta,P.,et al.2005,ApJ,623,314Rol, E.,Schady,P.,Hunsberger,S.,et al.2005,GRBCoordinates Network,3186Romano,P.,Moretti,A.,Banat,P.L.,et al.2006,A&A,450,59Roming,P.W.A.,Kennedy,T.E.,Mason,K.O.,et al.2005,Space Sci.Rev.,120,95Sari,R.&Esin,A.A.2001,ApJ,548,787Sari,R.,Piran,T.,&Narayan,R.1998,ApJ,497,L17Schady,P.,Mason,K.O.,Osborne,J.P.,et al.2006,ApJ,643,276Schlegel,D.J.,Finkbeiner,D.P.,&Davis,M.1998,ApJ,500,525Stratta,G.,Fiore,F.,Antonelli,L.A.,et al.2004,ApJ,608,846Tagliaferri,G.,Goad,M.,Chincarini,G.,et al.2005,Nature,436,985Wei,D.M.&Lu,T.1998,ApJ,505,252Wei,D.M.&Lu,T.2000,A&A,360,L13Wu,X.F.,Dai,Z.G.,Wang,X.Y.,et al.2005,ApJ,submittedto,astro-ph/0512555List of Objects‘XRF050406’on page1‘XRF050406’on page1‘XRF050406’on page1‘GRB050406’on page1‘XRF050406’on page1‘XRF050406’on page1‘XRF050406’on page1‘XRF050406’on page2‘XRF050406’on page2‘XRF050406’on page2‘XFR050406’on page3‘XRF050406’on page4A.Corsi and L.Piro:XRF050406:an IC component?9‘XRF050406’on page6‘XRF050406’on page7。