ZY15GP中文资料
微机光字牌
I54
29GP 信号输入
I55
30GP 信号输入
I56
31GP 信号输入
0V
32GP 信号输入
I57
25GP-32GP 弱电公共端
I58
33GP 信号输入
I59
34 GP 信号输入
I60
35 GP 信号输入
I61
36GP 信号输入
I62
37GP 信号输入
I63
38 GP 信号输入
I64
39 GP 信号输入
2
·功能·报警方式·
(1 个/秒)可顺追，逆追(定货时需注明)追忆中报警优先，最多可追忆 2000 个信号。 4.6 掉电保护功能：
报警器中采用了先进的掉电保护电路，若使用过程中发生断电，报警器中的记忆信号不 会丢失。 4.7 消除功能：
若需消除报警器中的记忆信号，操作消除键即可。 4.8 一对一接点输出功能：
0V
40 GP 信号输入
33GP-40GP 弱电公共端 41 GP 信号输入
42 GP 信号输入
43 GP 信号输入 44 GP 信号输入 45 GP 信号输入 46 GP 信号输入 47 GP 信号输入 48 GP 信号输入
41GP-48GP 弱电公共端 49GP 信号输入
50GP 信号输入
5V
24V WORK POWER （17）DY （18）DY
XXS-2A-32(64)Q
微机中央信号报警装置 （分体式）
说明书
国家电力公司南京电力自动化设备总厂 南京南自宁普自动化系统有限公司
·概述·型号意义·工作原理·
一、概述
我厂研制生产的 XXS—2A—32(64)Q 系列全功能微机闪光报警器广泛应用于电力、冶金、 石化，铁路等自动控制领域。微机化，数字化集成监控技术的采用，使其具有可靠性高，抗 干扰能力强，操作简单(中文 LCD 界面显示)安装方便，重量轻，现场维护量小等优点。
ZW空压机中文操作手册
2930
2950
进气量可由 0%－100%调整
水
26
27
31 空气冷却
三相、全密式、外扇冷却、SF1.15
15
22
2P
380
380
50 直接启动
50 Y-Δ.三只接触器 F级
1450
810
1415
550
640
1
1.1
附注:排气压力 0.85MPa 与 0.95MPa，两者风量相若。
3
ZW375A/W
连轴器传动
2950
2950
容量控制方式
-
进气量可由 0％至 100％调整
含油量
-
0
润滑水量
L
40
气筒容量
L
87
冷却方式
-
风冷
水冷
型式
-
马
额定功率
kW
全密式，外扇冷却，SF1.15 37
极数
-
2
达
额定电压
V
380
频率
Hz
50
启动方式
-
Y—△
绝缘等级
-
F级
其
长度
它 规
宽度
格
高度
mm
1712
mm
1100
mm
2
压缩机规格 1-1 产品规范
机
型
型
式-
排 气 压 力 MPa
进气压力温度 -
排气量
m3/min
排气温度 ℃
传动方式 -
压
缩转
速 rpm
机
容积控制 -
轴承润滑方式 -
润滑水量 L
水气桶容量 L
FR153GP中文资料
Pulse Generator
Note 2
Oscilloscope Note 1
trr +0.5A
0 -0.25
-1.0 1cm
Set Time Base for 20/100ns/cm
MCC
Figure 2 Forward Derating Curve
3.0
2.5
2.0
1.5 Amps
1.0
.5 Single Phase, Half Wave
60Hz Resistive or Inductive Load
0 0
50 75 100 125 150 175
°C
Average Forward Rectified Current - Amperesversus Ambient Temperature -°C
Peak Forward Surge
IFSM
Current
50A 8.3ms, half sine
Maximum Instantaneous Forward Voltage
IFM = 1.5A;
VF
1.3V TA = 25°C
Maximum DC
Reverse Current At Rated DC Blocking Voltage
CJ
20pF Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts
DO-15
Cycles
AP15N03GP中文资料
N-CHANNEL ENHANCEMENT MODE POWER MOSFET▼ Low Gate ChargeBV DSS 30V ▼ Simple Drive Requirement R DS(ON)80m Ω▼ Fast Switching I D15A▼ RoHS CompliantDescriptionAbsolute Maximum RatingsSymbol Units V DS V V GSV I D @T C =25℃A I D @T C =100℃A I DMA P D @T C =25℃W W/℃T STG ℃T J℃Symbol Value Units Rthj-case Thermal Resistance Junction-case Max. 4.5℃/W Rthj-ambThermal Resistance Junction-ambientMax.62℃/WData & specifications subject to change without noticeParameterRating Pb Free Plating ProductDrain-Source Voltage 30Gate-Source VoltageContinuous Drain Current, V GS @ 10V 15Continuous Drain Current, V GS @ 10V 9Pulsed Drain Current 150Operating Junction Temperature Range-55 to 150Linear Derating Factor 0.22Storage Temperature RangeTotal Power Dissipation 28-55 to 150200722051-1/6Thermal DataParameter± 20The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit.G D STO-220Electrical Characteristics@T j =25o C(unless otherwise specified)Symbol ParameterTest ConditionsMin.Typ.Max.Units BV DSSDrain-Source Breakdown VoltageV GS =0V, I D =250uA30--V ΔB V DSS /ΔT jBreakdown Voltage Temperature Coefficient Reference to 25℃, I D =1mA-0.037-V/℃R DS(ON)Static Drain-Source On-ResistanceV GS =10V, I D =8A --80m ΩV GS =4.5V, I D =6A --100m ΩV GS(th)Gate Threshold VoltageV DS =V GS , I D =250uA 1-3V I DSS Drain-Source Leakage Current (T j =25o C)V DS =30V, V GS =0V `-1uA Drain-Source Leakage Current (T j =150o C)V DS =24V, V GS =0V --25uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =8A - 5.4-nC Q gs Gate-Source Charge V DS =24V - 1.3-nC Q gd Gate-Drain ("Miller") Charge V GS =5V - 3.6-nC t d(on)Turn-on Delay Time 2V DS =15V - 3.6-ns t r Rise TimeI D =8A-19.8-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =10V -13-ns t f Fall Time R D =1.9Ω- 3.2-ns C iss Input Capacitance V GS =0V -260-pF C oss Output CapacitanceV DS =25V -144-pF C rssReverse Transfer Capacitancef=1.0MHz-13-pFSource-Drain DiodeSymbol ParameterTest ConditionsMin.Typ.Max.Units I S Continuous Source Current ( Body Diode )V D =V G =0V , V S =1.3V--15A I SM Pulsed Source Current ( Body Diode )1--50A V SDForward On Voltage2T j =25℃, I S =15A, V GS =0V--1.3VNotes:1.Pulse width limited by safe operating area.2.Pulse width <300us , duty cycle <2%.2/6±100± 20VFig 1. Typical Output Characteristics Fig 2. Typical Output CharacteristicsFig 3. On-Resistance v.s. Gate VoltageFig 4. Normalized On-Resistancev.s. Junction TemperatureFig 5. Maximum Drain Current v.s. Fig 6. Typical Power DissipationCase TemperatureFig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance4/6Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance CharacteristicsReverse DiodeJunction TemperatureFig 13. Switching Time Circuit Fig 14. Switching Time WaveformFig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform。
变频器的类型 下载
/ybc7778/blog/item/6cd43b5 28c084e521038c2e3.html/ybc7778/blog/item/f990ab3 358a33917eac4af3f.html2010-09-25 17:131.台安(TAIAN)变频器说明书E2N2V2SV300N310S310EV3002.台达(DELTA)变频器说明书VFD-A VFD-B VFD-F VFD-G VFD-M VFD-S VFD-V3.英威腾(INVT)变频器说明书CHE CHF CHV4.汇菱(HUILING)变频器说明书H30005.信捷(XINJE)变频器说明书V5/F56.凯迪华能变频器说明书CD20007.酷马(QMA)变频器说明书Q7000Q90009.三品(SANPIN)变频器说明书SKJ SPRQ-33310.能士(NSA)变频器说明书NSA20NSA8011.台凌(TAILING)变频器说明书TL80TL100TL100H12.力普变频器说明书LP10013.安普(AMPLE)变频器说明书AMP100014.誉强(YUQIANG)变频器说明书YQ3000-M YQ3000-A YQ3000-G15.格立特(GREAT)变频器说明书VF10VF11VF1516.RICH(利佳/艾瑞克)变频器说明书EI-MINI EI-450EI-450M EI-500EI-550EI-600EI-700EI-7001EI-8001EI Super N17.汇川(INOVANCE)变频器说明书MD300MD300A MD320MD33018.远川(YCDZ)变频器说明书YC-G YC-P19.紫日(CHZIRI)变频器说明书ZVF7ZVF9ZVF9V ZVF1120.森兰(SENLAN)变频器说明书SB50SB60/61SB61Z SB70SB100SB200BT40 21.安邦信(AMBITION)变频器说明书G9/P9V11G11E11Z9/Z1122.普传(POWTRAN)变频器说明书PI97G PI7000/7100PI7500PI7600/7800PI7660 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134.明电舍(MEIDEN)变频器说明书VT230S VT230SE VT240S135.LG变频器说明书iS3iH3iG5iS5iH136.现代(HYUNDAI)变频器说明书N50N100N300J300137.三星(SAMSUNG)变频器说明书MOSCON-E7MOSCON-F7MOSCON-F500138.意科(IECCO)变频器说明书SINUS-N139.佛朗克(FRANCK)变频器说明书FRS2000FRB6000140.NORD(诺德)变频器说明书SK300E SK400E SK5xxE SK530E SK700E SK750E141.EATON(伊顿)变频器说明书SVX9000SPX9000MVX9000GVX9000142.西门子(SIEMENS)变频器说明书MM410MM420MM430MM4406RA706SE70143.PE变频器说明书SD100SD250SD450SD700144.TMT变频器说明书PLUS VTC E IP55 PLUS IP55 E145.AB变频器说明书1336PLUS II PowerFlex 4PowerFlex 40PowerFlex400PowerFlex 70 PowerFlex 700146.艾默生(华为)变频器说明书EV1000EV2000EV3000EV3100EV3500TD900TD1000TD2000 TD3000TD3100TD3200TD3300147.ABB变频器说明书ACS400ACS500ACS510ACS600ACS800ACS1000148.伦茨(Lenze)变频器说明书8200/82108220/824082309300 Vector149.AC Tech变频器说明书MC1000QC SCF150.丹佛斯(Danfoss)变频器说明书FC51FC100FC200FC300VLT2000VLT2800VLT2900VLT3000VLT5000变频器说明书资料下载大全32010-09-06 21:33151.VACON(瓦控)变频器说明书NX NXS NXL152.LUST(路斯特)变频器说明书CDD3000CDE/CDB3000CDS4000153.WEG变频器说明书CTW-04CFW-08CFW-09CFW-10CFW-11154.BONFIGLIOLI(邦飞利)变频器说明书ACT200/400ACU200/400VCB400SYN10S/T SPL200/400155.Drivecon变频器说明书XS XT XR VF5100HG VF51RG VFDB VF61C VF61VF64VFK1/VFN1 VFN2156.CT变频器说明书Commander GP Unidrive SP Commander SE157.SIEI(西威)变频器说明书ARTDriveL ARTDriveG-EV158.KEB(科比)变频器说明书F4-S F4-F F5-M F5-M/S159.SEW变频器说明书MOVITRAC-31C MOVIDRIVE-60B/61B MOVITRAC-07MOVIRET-315/328/355/380/3150160.BERGES变频器说明书ACM-D2/S2/S3ACM-COMPACT SE1SW1161.施耐德变频器说明书ATV38ATV58-1ATV58-2ATV61ATV68-1ATV68-2ATV68-3162.pDRIVE变频器说明书MX-eco/pro/multi-eco/multi-pro-1MX-eco/pro/multi-eco/multi-pro-2163.斯德博(STOBER)变频器说明书FAS4000FDS4000MDS5000SDS4000164.欧陆变频器/直流调速器说明书512C590+590P690+590C165.依尔通(Emotron)变频器说明书FDU VFX VSA VSC CDX CDU MSF166.葆德(BALDOR)变频器说明书10111214167.Moeller(金钟-默勒)变频器说明书DV6-340DF51168.英泰(Invertek DRIVES)变频器说明书Optidrive Plus 3GV Optidrive Plus 3GV Compact Optidrive VTC Optidrive E Optidrive E1Optidrive E2Optidrive MEMA 4X169.瑞恩(RELIANCE)变频器说明书PSC4000/5000/DDS5000PSC7000VZ3000VZ7000170.派克汉尼汾(parker)变频器说明书AC650AC650V AC690+/ybc7778/blog/item/8faa0528684e0f23d42af11f.html ybc7778的空间主页博客相册|个人档案 |好友查看文章各种品牌变频器用户手册下载2010-09-03 09:551 616g5-------------下载2 616G3 -------------下载3 ABB ACS400用户手册下4 ABB ACS100用户手册下载5 ABB ACS140用户手册下载6 西门子变频器MM410操作手册下载7 西门子变频器MM420操作手册下载8 西门子变频器MM 430操作手册下载9 西门子变频器 MM 440操作手册下载10 三菱变频器FR-A500系列下载11 三菱变频器使用手册-FR-S540下载12 三菱变频器使用手册-FR-E540 中文版下载13 三垦变频器说明书下载14 Delta VFD-A/H型录下载15 Delta VFD-B型录下载16 Delta VFD-V型录下载17 Danfoss VLT2800 Profibuss支持载18 DANFOSS VLT?7000 恒压供水专用变频器下载19 艾默生TD3000系列变频器用户手册下载20 艾默生TD2100系列变频器用户手册下载21 艾默生EV2000 系列通用变频器技术手册下载22 欧陆690+系列变频器使用说明书下载23 欧陆直流调速器590P使用手册下载24 三垦 SAMCO-i 系列大容量变频器使用说明书下载25 三垦 SAMCO-vm05 系列变频器使用说明书下载26 富士FVR-E11S系列紧凑型变频器说明书下载27 富士 5000G11S/P11S系列变频器操作说明书下载28 日立变频器SJ300中文操作手册下载29 日立变频器SJ100中文操作手册下载30 日立变频器L100中文操作手册下载31 伦茨8220&8240变频器操作手册下载32 台安SV300系列变频器使用手册下载33 安邦信 AMB-G11 使用说明书下载34 安邦信 AMB-G9/P9使用说明书下载35 ACS501下载·ABB ACS600用户手册册下载·ABB ACS400用户手册下载·ABB ACS100用户手册下载·ABB ACS140用户手册下载·西门子变频器MM410操作手册下载·西门子变频器MM420操作手册下载·西门子变频器MM 430操作手册下载·西门子变频器MM 440操作手册下载·三菱变频器FR-A500系列下载·三菱变频器使用手册-FR-S540下载·三菱变频器使用手册-FR-E540 中文版下载·三垦变频器说明书下载·Delta VFD-A/H型录下载·Delta VFD-B型录下载·Delta VFD-V型录下载·Danfoss VLT2800 Profibuss支持下载·DANFOSS VLT?7000 恒压供水专用变频器下载·艾默生TD3000系列变频器用户手册下载·艾默生TD2100系列变频器用户手册下载·艾默生EV2000 系列通用变频器技术手册下载·欧陆690+系列变频器使用说明书下载·欧陆直流调速器590P使用手册下载·三垦 SAMCO-i 系列大容量变频器使用说明书下载·三垦 SAMCO-vm05 系列变频器使用说明书下载·富士FVR-E11S系列紧凑型变频器说明书下载·富士 5000G11S/P11S系列变频器操作说明书下载·日立变频器SJ300中文操作手册下载·日立变频器SJ100中文操作手册下载·日立变频器L100中文操作手册下载·伦茨8220&8240变频器操作手册下载·台安SV300系列变频器使用手册下载·安邦信 AMB-G11 使用说明书下载·安邦信 AMB-G9/P9使用说明书下载·FUJI FRENIC 5000G11S/P11S系列说明书下载FUJI FRENIC-Mini系列小容量通用紧凑型变频器下载类别：变频器 | | 添加到搜藏 | 分享到i贴吧 | 浏览(980) | 评论(12)上一篇：汇川变频器PG卡使用说明下一篇：变频器说明书资料下载大全3已有8人分享了这篇文章：fangxingyang12Ta的转贴花影扫尘Ta的转贴明你不知道Ta的转贴zz112212240Ta的转贴yongzhewudi21Ta的转贴RRRSHPLTa的转贴csyf0030Ta的转贴云中长弓张云中Ta的转贴最近读者：登录后，您就出现在这里。
ZYMC-15使用说明书
电刷型直流电机PWM 伺服驱动器ZYMC-15J 系列使用说明书电话：(025)-85280916手机：（0）133********特点：�技术参数，性能指标，控制方式，外形尺寸等与国外同类型产品相类似。
�可完全取代国外同类型产品。
�输入提供±10V，0-10V，0-5V，PWM 等多种调速方式供用户选择，易于连接。
�正反方向限位功能简单可靠，方便实用。
�SW 开关设定所需工作模式。
�POT 电位器调节驱动器至所需性能。
�LED 红，绿发光二极管指示工作状态。
�内设过流，过压，过温等保护措施。
�为用户提供了±10V/3mA 辅助电源。
�H 型单极倍频四象限再生驱动模式，驱动效率≥98%。
应用：特别适合要求高精度,高稳速和位置控制的场合。
广泛应用于工业自动化控制，数控技术，机器人制造及航空航天，大学，科研，军工，国防，天文，仓储，医疗设备等各领域，是组成智能自动化控制系统必不可少的部件之一。
产品型号及性能产品型号（规格）电源电压（Ｖ）工作电流（最大）最小负载感应系数开关频率（±10%）工作温度（℃）功率耗散（参考）带宽100A3015-30V≦100A250uH15KHZ-20°TO+70°≤400W100A5030-50V≦100A250uH15KHZ≤400W 75A6040-60V≦75A250uH15KHZ≤400W75A10040-100V≦75A250uH15KHZ≤400W40A15040-150V≦40A250uH15KHZ≤400W30A20040-200V≦30A250uH15KHZ≤400W20A25060-250V≦20A250uH15KHZ≤400W注：�以上仅为部分常用产品规格及性能，用户特殊要求可另外提出。
�军品级(低温为:-40º,-55º)请单独提出要求。
电话：(025)-85280916手机：（0）133********安全操作注意事项伺服驱动器初次与机械负载相连调试时，务必请注意安全，做好防范，并按规定操作。
方正书版排版注解命令列表
方正书版排版注解命令列表方正书版排版语言中共有141个注解（除去单字字符注解），按字母顺序排序如下：序号注解名称表现形式注解作用1 阿克生注解〖AK〗在外文字母上面排符号2 暗码注解〖AM〗指定本页不排页码3 边边注解〖BB〗定义边注中文字格式4 标题定义注解〖BD〗定义全书标题格式5 标点符号注解〖BF〗定义标点符号格式6 表格注解〖BG〗排表格7 表行注解〖BH〗指定表行的排法8 背景注解〖BJ〗在版心上排背景9 边栏注解〖BL〗在页面上划分主栏、副栏10 边码注解〖BM〗在边文当前的位置排页码11 不排注解〖BP〗指定部分内容不参加排版12 表首注解〖BS〗沿表格斜线排放文字13 标题注解〖BT〗排标题14 边文注解〖BW〗排版心之外的文字15 版心注解〖BX〗定义全书的排版格式16 边注注解〖BZ〗排副栏中的文字17 长扁字注解〖CB〗排长体字、扁体字18 长度注解〖CD〗画线、画花边19 撑满注解〖CM〗文字拉开距离占满行宽20 插入注解〖CR〗将其他排版软件制作的内容排到版面中21 彩色注解〖CS〗指定文字、线条和底纹的颜色22 词条注解〖CT〗在书眉上排词条23 粗细注解〖CX〗改变文字笔画粗细24 参照注解〖CZ〗参照以前排版的格式进行排版25 顶底注解〖DD〗在字符上、下添加字符（数学）26 对开注解〖DK〗指定标点、数字和符号为半角幅面27 单眉注解〖DM〗排单页码上的书眉内容28 对齐注解〖DQ〗按首行内容左右对齐排29 段首注解〖DS〗排一段文字开头的大字或标题30 对位注解〖DW〗上下对齐位置排31 单页注解〖DY〗换到单页码的版面排32 对照注解〖DZ〗多栏内容对照排版33 方程注解〖FC〗排方程式（数学）34 方程号注解〖FH〗排方程号（数学）35 繁简注解〖FJ〗简体－繁体汉字转换36 方框注解〖FK〗排方框37 分栏注解〖FL〗版面分栏排38 分区注解〖FQ〗在版面划出一个区域独立排版39 反应注解〖FY〗排化学反应式（化学）40 勾边注解〖GB〗给文字勾边41 表格跨项对位注解〖GD〗在表格内实现位置对齐42 改宽注解〖GK〗改变当前行宽43 改排注解〖GP〗竖排表格文字44 表格跨项位标注解〖GW〗在表格内设置位置标记45 割注注解〖GZ〗排古籍图书中的随文注解46 行距注解〖HJ〗改变行间距离47 行宽注解〖HK〗改变字行宽度48 行列注解〖HL〗排数字行列式（数字）49 行齐注解〖HQ〗外文行末是否对齐排50 行数注解〖HS〗指定标题所占行数51 汉体注解〖HT〗指定汉字字体与字号52 画线注解〖HX〗在版面上画线53 行移注解〖HY〗严格规定两行之间的距离54 行中注解〖HZ〗在多行文字的中线上排字55 界标注解〖JB〗在盒组左、右加分界符号（数字）56 加底注解〖JD〗排底纹57 结构注解〖JG〗进入排化学结构式状态（化学）58 角键注解〖JJ〗排环结构式的化学键（化学）59 紧排注解〖JP〗压缩字与字之间的距离60 基线注解〖JX〗移动文字的基线61 居右注解〖JY〗文字靠右排62 居中注解〖JZ〗文字排在行中间63 外挂字体别名定义注解〖KD〗指定外挂字体的别名64 开方注解〖KF〗排数字根式（数字）65 空格注解〖KG〗字间加空66 空行注解〖KH〗行间加空67 空眉注解〖KM〗本页不排书眉68 空心注解〖KX〗排空心文字69 邻边注解〖LB〗六角环之间互相连接（化学）70 连到注解〖LD〗字键连接点（化学）71 六角环注解〖LJ〗排六角环（化学）72 另栏注解〖LL〗转排下一栏73 另面注解〖LM〗换到另一面排74 另区注解〖LQ〗图片连同相关文字转排到下一页75 相联始点注解〖LS〗化学式连线始点（化学）76 立体注解〖LT〗排立体文字77 相联终点注解〖LZ〗化学式连线始点（化学）78 自动目录定义注解〖MD〗定义目录格式79 目录注解〖ML〗目录登记80 眉眉注解〖MM〗排单页、双页书眉上相同的内容81 多页分区注解〖MQ〗连续多页重复分区82 书眉说明注解〖MS〗书眉说明83 民体注解〖MT〗定义民族文字体84 自动目录登记注解〖MZ〗自动抽取目录内容85 页号注解〖PN〗排特殊页码86 插入EPS注解〖PS〗插入EPS文件87 拼音注解〖PY〗排汉语拼音88 前后注解〖QH〗改变行宽并撑满行89 全身注解〖QS〗字母、数字和标点符号排全角90 倾斜注解〖QX〗字符倾斜排91 日文注解〖RW〗指定输出日文新、旧字形92 书版注解〖SB〗指定同时排版的小样文件名93 始点注解〖SD〗排版的起始点94 段首缩进注解〖SJ〗段首缩进排95 双眉注解〖SM〗排双页码面的书眉内容96 竖排注解〖SP〗竖排化学式（化学）97 上齐注解〖SQ〗上边对齐（取消上下居中）98 角标大小设置注解〖SS〗改变角标字大小99 数字字体注解〖ST〗改变数字字体100 数字字体注解〖ST+〗数字字体与汉字字体自动搭配101 上下注解〖SX〗排分式（数字）102 双页注解〖SY〗转到双码页上排103 数字注解〖SZ〗竖排时数字单个直立排104 条码注解〖TP〗提取条码元素数据105 图片注解〖TP〗排插图图片106 图说注解〖TS〗排图片说明文字107 添线注解〖TX〗在盒子上、下添加线或符号108 条码注解〖TM〗提取条码元素数据109 图文注解〖TW〗指定图片说明文字的属性110 位标注解〖WB〗指定对齐位置的标记111 无页码注解〖WM〗本页不排页码，也不占位置112 外文字体注解〖WT〗改变外文字体113 外体自动搭配注解〖WT〗实现外文与汉字字体自动搭配114 外文注解〖WW〗使用外文标点符号115 无线表注解〖WX〗排无线表116 文种注解〖WZ〗选择所排外文的种类117 消除单字行注解〖XD〗消除单字行118 插入随文图片注解〖XC〗插入随文图片119 线字号注解〖XH〗指定线粗细120 相联注解〖XL〗排反应式上下附加线及字符（化学）121 线末注解〖XM〗结构式连线末端（化学）122 索引点注解〖XP〗抽取索引内容123 线始注解〖XS〗结构式连线始端（化学）124 斜线注解〖XX〗画斜线125 旋转注解〖XZ〗旋转汉字与字符126 页码注解〖YM〗指定页码格式127 右旋注解〖YX〗右旋注解（蒙文数学、化学）128 阴阳字注解〖YY〗汉字与字符为黑底白字129 子表注解〖ZB〗表格内再套表格130 自定义注解〖ZD〗定义宏注解简化重复内容131 自换注解〖ZH〗指定自动换行位置132 字键注解〖ZJ〗排化学键（化学）133 自控注解〖ZK〗自动换行后缩进排134 自定义文件名注解〖ZM〗指定自定义文件名135 左齐注解〖ZQ〗公式左端排文字（数字）136 注文说明注解〖ZS〗指定注释的格式137 整体注解〖ZT〗指定一段文字内容不可拆页138 注文注解〖ZW〗排注释的内容139 左旋注解〖ZX〗排蒙文其主体语言为中文时，蒙文单词竖排140 注音注解〖ZY〗指定注音字符的排法141 着重注解〖ZZ〗对字符加着重符号。
APT15GP90BDQ1(G) 电子部件说明书
050-7497 R e v A 2-2006MAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise specified.STATIC ELECTRICAL CHARACTERISTICSCharacteristic / Test ConditionsCollector-Emitter Breakdown Voltage (V GE = 0V, I C = 350µA)Gate Threshold Voltage (V CE = V GE , I C = 1mA, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V, I C = 15A, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V, I C = 15A, T j = 125°C)Collector Cut-off Current (V CE = 900V, V GE = 0V, T j = 25°C) 2Collector Cut-off Current (V CE = 900V, V GE = 0V, T j = 125°C) 2Gate-Emitter Leakage Current (V GE = ±20V)Symbol V (BR)CES V GE(TH)V CE(ON)I CES I GESUnitsVoltsµA nASymbol V CES V GE I C1I C2I CM SSOA P D T J ,T STGT LAPT15GP90BDQ1(G)900±3043216060A @ 900V250-55 to 150300UNIT VoltsAmpsWatts °CParameterCollector-Emitter Voltage Gate-Emitter VoltageContinuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1Switching Safe Operating Area @ T J = 150°C Total Power DissipationOperating and Storage Junction Temperature RangeMax. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.APT Website - CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.MIN TYPMAX9003 4.5 6 3.2 3.92.7 350 3000±100The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.• Low Conduction Loss • SSOA Rated• Low Gate Charge• Ultrafast Tail Current shutoffPOWER MOS 7®IGBT050-7497 R e v A 2-2006APT15GP90BDQ1(G)1 Repetitive Rating: Pulse width limited by maximum junction temperature.2 For Combi devices, I ces includes both IGBT and FRED leakages3 See MIL-STD-750 Method 3471.4 E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchingloss. (See Figures 21, 22.)6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)APT Reserves the right to change, without notice, the specifications and information contained herein.THERMAL AND MECHANICAL CHARACTERISTICSUNIT °C/W gmCharacteristicJunction to Case (IGBT)Junction to Case (DIODE)Package WeightSymbol R θJC R θJC W TDYNAMIC CHARACTERISTICSSymbol C ies C oes C res V GEP Q g Q ge Q gc SSOA t d(on)t rt d(off)t f E on1E on2E off t d(on)t r t d(off)t f E on1E on2E off Test Conditions Capacitance V GE = 0V, V CE = 25Vf = 1 MHz Gate Charge V GE = 15VV CE = 450V I C = 15AT J = 150°C, R G = 4.3Ω, V GE =15V, L = 100µH,V CE = 900V Inductive Switching (25°C)V CC = 600V V GE = 15V I C = 15AR G = 4.3ΩT J = +25°CInductive Switching (125°C)V CC = 600V V GE = 15V I C = 15AR G = 4.3ΩT J = +125°CCharacteristic Input Capacitance Output CapacitanceReverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter ChargeGate-Collector ("Miller") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall TimeTurn-on Switching Energy 4Turn-on Switching Energy (Diode) 5Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall TimeTurn-on Switching Energy 4 4Turn-on Switching Energy (Diode) 55Turn-off Switching Energy 6MIN TYPMAX1100 120 32 7.5 60 1027 60914 33 55 TBD 430200914 70100 TBD 790500UNIT pF V nCAnsµJns µJMIN TYP MAX.50 1.185.9050-7497 R e v A 2-2006B VC E S , C O L L E C T O R -T O -E M I T T E R B R E A KD O W N V CE , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )I C , C O L L E C T O R C U R R E N T (A )V O L T A G E (N O R M A L I Z E D )I C , D C C O L L E C T O R C U R R E N T (A ) V C E , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V ) V G E , G A T E -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )1.101.051.000.950.90-50 -25 0 25 50 75 100 125-50 -25 0 25 50 75 100 125 150605040302010V CE , COLLECTER-TO-EMITTER VOLTAGE (V)V CE , COLLECTER-TO-EMITTER VOLTAGE (V)FIGURE 1, Output Characteristics(T J = 25°C)FIGURE 2, Output Characteristics (T J = 125°C)V GE , GATE-TO-EMITTER VOLTAGE (V)GATE CHARGE (nC)FIGURE 3, Transfer Characteristics FIGURE 4, Gate ChargeV GE , GATE-TO-EMITTER VOLTAGE (V)T J , Junction Temperature (°C)FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature T J , JUNCTION TEMPERATURE (°C)T C , CASE TEMPERATURE (°C)FIGURE 7, Breakdown Voltage vs. Junction TemperatureFIGURE 8, DC Collector Current vs Case Temperature050-7497 R e v A 2-2006S W I T C H I N G E N E R G Y L O S S E S (µJ ) E O N 2, T U R N O N E N E R G Y L O S S (µJ )t r , R I S E T I M E (n s )t d (O N ), T U R N -O N D E L A Y T I M E (n s )S W I T CH I N G E N E R G Y L O S S E S (µJ ) E O F F ,T U R N O F F E N E R G Y L O S S (µJ )t f , F A L L T I M E (n s )t d (O F F ), T U R N -O F F D E L A Y T I M E (n s )I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A)FIGURE 9, Turn-On Delay Time vs Collector CurrentFIGURE 10, Turn-Off Delay Time vs Collector CurrentI CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector CurrentFIGURE 12, Current Fall Time vs Collector CurrentI CE , COLLECTOR TO EMITTER CURRENT (A)I CE , COLLECTOR TO EMITTER CURRENT (A)FIGURE 13, Turn-On Energy Loss vs Collector CurrentFIGURE 14, Turn Off Energy Loss vs Collector CurrentR G , GATE RESISTANCE (OHMS)T J , JUNCTION TEMPERATURE (°C)FIGURE 15, Switching Energy Losses vs. Gate ResistanceFIGURE 16, Switching Energy Losses vs Junction Temperature141210864203530252015105200015001000500250020001500100050080706050403020100120100806040200120010008006004002000200015001000500050-7497 R e v A 2-2006APT15GP90BDQ1(G)Z θJ C , T H E R M A L I M P E D A N C E (°C /W)RECTANGULAR PULSE DURATION (SECONDS)Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration70605040302010C , C A P A C I T A N C E (PF )I C , C O L L E C T O R C U R R E N T (A )V CE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V CE , COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter VoltageFigure 18,Minimim Switching Safe Operating Area0 200 400 600 800 1000FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODELF M A X , O P E R A T I NG F R E Q U E N C Y (kH z )I C , COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current210100501050.004740.125RC MODELCase temperature(°C)Junction temp (°050-7497 R e v A 2-2006APT15GP90BDQ1(G)Figure 22, Turn-on Switching Waveforms and DefinitionsFigure 23, Turn-off Switching Waveforms and DefinitionsT J = 125°CCollector CurrentCollector VoltageGate VoltageSwitching Energy5%10%t d(on)90%10%t r5%T J = 125°CCollector VoltageCollector CurrentGate VoltageSwitching Energy90%t d(off)10%t f90%V CC050-7497 R e v A 2-2006APT15GP90BDQ1(G)TYPICAL PERFORMANCE CURVES Characteristic / Test ConditionsMaximum Average Forward Current (T C = 126°C, Duty Cycle = 0.5)RMS Forward Current (Square wave, 50% duty)Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms)Symbol I F (AV )I F (RMS )I FSM Symbol V FCharacteristic / Test ConditionsI F = 15A Forward Voltage I F = 30AI F = 15A, T J = 125°CSTATIC ELECTRICAL CHARACTERISTICSUNIT AmpsUNITVoltsMINTYPMAX2.53.061.92APT15GP90BQDQ1G)152980DYNAMIC CHARACTERISTICSMAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise specified.ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODEMINTYPMAX-20- 235 - 185 - 3 -- 300 - 810 - 6 - - 125 - 1150-19UNIT ns nCAmps ns nC Amps ns nC AmpsCharacteristicReverse Recovery Time Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery CurrentSymbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRMTest ConditionsI F = 15A, di F /dt = -200A/µs V R = 667V, T C = 25°CI F = 15A, di F /dt = -200A/µs V R = 667V, T C = 125°CI F = 15A, di F /dt = -1000A/µs V R = 667V, T C = 125°CI F = 1A, di F /dt = -100A/µs, V R = 30V, T J = 25°CRECTANGULAR PULSE DURATION (seconds)FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATIONZ θJ C , T H E R M A L I M P E D A N C E (°C /W )0.001470.0440RC MODELJunction temp(°Case temperature(°C)050-7497 R e v A 2-2006APT15GP90BDQ1(G)8070605040302010C J , J U N C T I O N C A P A C I T A N C E K f ,D Y N A M I C P A R A ME T E R S(p F )(N o r m a l i z e d t o 1000A /µs )I F (A V ) (A )T J , JUNCTION TEMPERATURE (°C)Case Temperature (°C)Figure 29. Dynamic Parameters vs. Junction TemperatureFigure 30. Maximum Average Forward Current vs. CaseTemperatureV R , REVERSE VOLTAGE (V)Figure 31. Junction Capacitance vs. Reverse VoltageV F , ANODE-TO-CATHODE VOLTAGE (V)-di F /dt, CURRENT RATE OF CHANGE(A/µs)Figure 25. Forward Current vs. Forward VoltageFigure 26. Reverse Recovery Time vs. Current Rate of Change -di F /dt, CURRENT RATE OF CHANGE (A/µs)-di F /dt, CURRENT RATE OF CHANGE (A/µs)Figure 27. Reverse Recovery Charge vs. Current Rate of ChangeFigure 28. Reverse Recovery Current vs. Current Rate of ChangeQ r r , R E V E R S E R E C O V E R Y C H A R G E I F , F O R W A R D C U R R E N T(n C )(A )I R R M , R E V E R S E R E C O V E R Y C U R R E N T t r r , R E V E R S E R E C O V E R Y T I M E(A )(n s )110 100 200050-7497 R e v A 2-2006APT15GP90BDQ1(G)TYPICAL PERFORMANCE CURVES51234di F /dt - Rate of Diode Current Change Through Zero Crossing.I F - Forward Conduction CurrentI RRM - Maximum Reverse Recovery Current.t rr - ReverseR ecovery Time, measured from zero crossing where Q rr - Area Under the Curve Defined by I RRM and t rr .line through I RRM and 0.25 I RRM passes through zero.Figure 32. Diode Test CircuitFigure 33, Diode Reverse Recovery Waveform and DefinitionsAPT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.TO -247 Package Outlinee1SAC: Tin, Silver, CopperDimensions in Millimeters and (Inches)。
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(V)
ZY6V2GP ZY6V8GP ZY7V5GP ZY8V2GP ZY9V1GP ZY10GP ZY11GP ZY12GP ZY13GP ZY15GP ZY16GP ZY18GP ZY20GP ZY22GP ZY24GP ZY27GP ZY30GP ZY33GP ZY36GP ZY39GP ZY43GP ZY47GP ZY51GP ZY56GP ZY62GP ZY68GP ZY75GP ZY82GP ZY91GP ZY100GP ZY110GP ZY120GP ZY130GP ZY150GP ZY160GP ZY180GP ZY200GP
IZ = 50 mA Test Current IZ 25 mA Test Current IZ 100 mA ZY6.2GP ZY10GP ZY7.5GP ZY8.2GP
Tj = 25°C
ZY12GP
50 mA
8 9 10 11 12 13 14 15 V
ZY15GP
ZY18GP ZY22GP
Tj = 25°C
(V)
1.5 2 2 3.5 6.9 7.5 8.3 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.5 22.8 25 27.4 29.6 32.7 35.7 38.8 42.5 47.1 51.7 57 62.4 69.2 76 83.5 91.2 98.2 114 122 137 152
Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body.
5.8-6.6 6.4-7.2 7.0-7.9 7.7-8.7 8.5-9.6 9.4-10.6 10.4-11.6 11.4-12.7 12.4-14.1 13.8-15.8 15.3-17.1 16.8-19.1 18.8-21.2 20.8-23.3 22.8-25.6 25.1-28.9 28-32 31-35 34-38 37-41 40-46 44-50 48-54 52-60 58-66 64-72 70-79 77-88 85-96 94-106 104-116 114-127 124-141 138-156 153-171 168-191 188-212
Ptot PZSM Tj Tstg Power dissipation at Tamb = 25 ºC Non repetitive peak zener dissipation (t = 10 ms) Operating temperature range Storage temperature range 2W 60 W – 65 to + 175 °C – 65 to + 175 °C
ZY27GP ZY33GP ZY39GP ZY47GP
10 mA
45
50 V
mA 20
ZY56GP
ZY68GP ZY82GP
Tj = 25°C
IZ 10
Test Current IZ 10mA
ZY100GP ZY120GP ZY150GP
5 mA ZY180GP ZY200GP
0 0 50 100 VZ 150 200 V
(1) Tested with pulses. Pulse test: tp ≤ 50 ms; δ < 2%
(Ω)
2 2 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 350 350
元器件交易网
ZY6V2GP......ZY200GP
2 W Glass Passivated Zener Diode
Dimensions in mm. DO-15 (Plastic)
Voltage 6.2 to 200 V.
Power 2.0 W
®
6.35 ± 0.2
58.5 ± 0.5
Mar - 01
元器件交易网
ZY-GP Characteristic Curves
POWER DISSIPATION
2.4
10mm. - 10mm.
2 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175
Tamb, ambient temperature (ºC)
(mA)
100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5
(% / ºC)
+0.025 +0.035 +0.035 +0.055 +0.055 +0.070 +0.075 +0.075 +0.075 +0.075 +0.085 +0.085 +0.085 +0.085 +0.085 +0.085 +0.085 +0.085 +0.085 +0.085 +0.095 +0.095 +0.095 +0.095 +0.105 +0.105 +0.105 +0.105 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110
THERMAL RESISTANCE
90 80
60
40
20
I
I
0 0 10 20 30 35
I, lead length (mm.)
Mar - 01
元器件交易网
ZY-GP
BREAKDOWN CHARACTERISTICS
mA 240 200 IZ 160 120 80 40 0 0 1 2 3 4 5 6 7 VZ mA 60 50 IZ 40 30 20 10 0 0 5 10 15 20 25 VZ 30 35 40
• Glass passivated junction • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads • Polarity: Color band denotes cathode
Maximum Ratings, according to IEC publication No. 134
Maximum Zener Impedance ZZT at IZT
Test Current IZT
Temp coef. of Zener Volt.
Min Reverse Voltage at IR = 1 µA VR
Max Regulator Current at 45 ºC
IZM (mA)
245 220 200 180 165 145 135 120 110 98 90 80 72 66 60 53 48 44 40 37 33 30 27 25 21 20 18 16 15 13 12 11 10 9 8.5 8.0 7.5
Mar - 01
Electrical Characteristics at Tamb = 25 °C
Rthj-a Max. thermal resistance at: 10 mm. lead length 60 °C/W
Mar - 01
元器件交易网
ZY-GP
Type
Zener (1) Voltage Range VZ at IZT