MCD132-14IO1中文资料

I TRMS =2x 300 A I TAVM =2x 130 A V RRM =800-1800 VSymbol Test Conditions Maximum RatingsI TRMS , I FRMS T VJ = T VJM300A I TAVM , I FAVM T C = 85°C; 180° sine 130A I TSM , I FSMT VJ = 45°C;t = 10 ms (50 Hz), sine 4750A V R = 0t = 8.3 ms (60 Hz), sine 5080A T VJ = T VJM t = 10 ms (50 Hz), sine 4230A V R = 0t = 8.3 ms (60 Hz), sine 4530A òi 2dtT VJ = 45°C t = 10 ms (50 Hz), sine 113 000A 2s V R = 0t = 8.3 ms (60 Hz), sine 108 000A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 89 500A 2s V R = 0t = 8.3 ms (60 Hz), sine86 200A 2s (di/dt)crT VJ = T VJM repetitive, I T = 500 A 150A/m sf =50 Hz, t P =200 m s V D = 2/3 V DRM I G = 0.5 A non repetitive, I T = 500 A 500A/m s diG /dt = 0.5 A/m s(dv/dt)cr T VJ = T VJM ;V DR = 2/3 V DRM1000V/m s R GK = ¥; method 1 (linear voltage rise)P GM T VJ = T VJM t P =30 m s 120W I T = I TAVMt P =500 m s60W P GAV 8W V RGM 10V T VJ -40...+125°C T VJM 125°C T stg -40...+125°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL £ 1 mAt = 1 s 3600V~M d Mounting torque (M6)2.25-2.75/20-25Nm/lb.in.Terminal connection torque (M6) 4.5-5.5/40-48Nm/lb.in.WeightTypical including screws125gV RSM V RRM Type V DSM V DRM V V Version 1Version 1900800MCC 132-08io1MCD 132-08io113001200MCC 132-12io1MCD 132-12io115001400MCC 132-14io1MCD 132-14io117001600MCC 132-16io1MCD 132-16io119001800MCC 132-18io1MCD 132-18io1Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensionsFeaturesq International standard packageq Direct copper bonded Al 2O 3 -ceramic base plateq Planar passivated chips q Isolation voltage 3600 V~q UL registered, E 72873qKeyed gate/cathode twin pinsApplications q Motor control q Power converterq Heat and temperature control for industrial furnaces and chemical processesq Lighting controlqContactless switchesAdvantagesq Space and weight savings q Simple mountingqImproved temperature and power cyclingqReduced protection circuitsThyristor ModulesThyristor/Diode ModulesMCDMCC315421236754032Symbol Test ConditionsCharacteristic ValuesIRRM , I DRM T VJ = T VJM ; V R = V RRM ; V D = V DRM 10mA V T , V F I T , I F = 300 A; T VJ = 25°C1.36V V T0For power-loss calculations only (T VJ = 125°C)0.8V r T 1.5m W V GT V D = 6 V;T VJ = 25°C2.5V T VJ = -40°C 2.6V I GT V D = 6 V;T VJ = 25°C 150mA T VJ = -40°C 200mA V GD T VJ = T VJM ;V D = 2/3 V DRM0.2V I GD 10mA I L T VJ = 25°C; t P = 30 m s; V D = 6 V 300mA I G = 0.5 A; di G /dt = 0.5 A/m s I H T VJ = 25°C; V D = 6 V; R GK = ¥200mA t gd T VJ = 25°C; V D = 1/2 V DRM 2m s I G = 0.5 A; di G /dt = 0.5 A/m st q T VJ = T VJM ; I T = 160 A, t P = 200 m s; -di/dt = 10 A/m s typ.150m s V R = 100 V; dv/dt = 20 V/m s; V D = 2/3 V DRM Q S T VJ = T VJM ; I T , I F = 300 A, -di/dt = 50 A/m s 550m C I RM 235A R thJC per thyristor/diode; DC current 0.23K/W per moduleother values 0.115K/W R thJK per thyristor/diode; DC current see Fig. 8/90.33K/W per module0.165K/W d S Creepage distance on surface 12.7mm d A Strike distance through air9.6mm aMaximum allowable acceleration50m/s 2Optional accessories for modulesKeyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5)UL 758, style 1385,Type ZY 180R (R = right for pin pair 6/7)CSA class 5851, guide 460-1-1Dimensions in mm (1 mm = 0.0394")MCCMCDFig. 1 Gate trigger characteristicsFig. 2 Gate trigger delay timeFig. 4i 2t versus time (1-10 ms)Fig. 4a Maximum forward currentat case temperature Fig. 5Power dissipation versus on-state current and ambient temperature (per thyristor or diode)Fig. 6Three phase rectifier bridge:Power dissipation versus direct output current and ambient temperatureFig. 3Surge overload currentI TSM , I FSM : Crest value, t: durations tms t0.0010.010.1101000200030004000110104105106A 2s I TSMA i 2tT VJ = 45°CT VJ = 125°C80 % V RRM T VJ = 45°C 50 HzT VJ = 125°CFig. 7Three phase AC-controller:Power dissipation versus RMS output current and ambient temperatureFig. 8Transient thermal impedancejunction to case (per thyristor or diode)Fig. 9Transient thermal impedancejunction to heatsink (per thyristor or diode)R thJC for various conduction angles d: d R thJC (K/W) DC 0.230180°0.244120°0.25560°0.28330°0.321Constants for Z thJC calculation:i R thi (K/W)t i (s)10.00950.00120.01750.06530.2030.4RthJK for various conduction angles d: d R thJK (K/W) DC 0.330180°0.344120°0.35560°0.38330°0.421Constants for Z thJK calculation:i R thi (K/W)t i (s)10.00950.00120.01750.06530.2030.440.11.29。