DMP2002UPS可替代AON6411

20V P-CHANNEL ENHANCEMENT MODE MOSFETFeaturesDescriptionThis new generation P-Channel Enhancement Mode MOSFET is designed to minimize R DS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.Applications∙ SwitchPowerDI5060-8 (Type K)∙Thermally Efficient Package-Cooler Running Applications ∙ High Conversion Efficiency∙ Low R DS(ON) – Minimizes On State Losses∙ <1.1mm Package Profile – Ideal for Thin Applications ∙ Lead-Free Finish; RoHS Compliant (Notes 1 & 2)∙ Halogen and Antimony Free. “Green” Device (Note 3) ∙Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data∙ Case: PowerDI5060-8 (Type K)∙ Case Material: Molded Plastic, ―Green ‖ Molding Compound; UL Flammability Classification Rating 94V-0 ∙ Moisture Sensitivity: Level 1 per J-STD-020∙ Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 ∙Weight: 0.097 grams (Approximate)GTop ViewPin1Bottom ViewSInternal SchematicTop View Pin ConfigurationOrdering Information (Note 4)Notes:1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See /quality/lead_free.html fo r more information about Diodes Incorporated’s defin itions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /products/packages.html.Marking InformationPowerDI5060-8 (Type K)= Manufacturer’s MarkingP2002US = Product Type Marking Code YYWW = Date Code MarkingYY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53)SP2002US AON6411替代型号DMP2002UPS 说明文档Maximum Ratings (@T A = +25°C, unless otherwise specified.)Thermal CharacteristicsElectrical Characteristics (@T A = +25°C, unless otherwise specified.)(Note 7)(Note 7)Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.6. Short duration pulse test used to minimize self-heating effect.7. Guaranteed by design. Not subject to product testing.8. Package limited.R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )I D , D R A I N C U R R E N T (A )30.03025.0 25 20.020 15.0 1510.0 10 5.050.00.00240.00220.0020.5 1 1.5 2 2.5 3V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic0.01 0.0090.008 0.007 0.006 0.0050.40.6 0.8 1 1.2 1.4 1.6 1.8V GS , GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic0.00180.00160.004 0.003 0.0020.0010.00140.002426101418 222630I D , DRAIN-SOURCE CURRENT (A)Figure 3. Typical On-Resistance vs. Drain Currentand Gate Voltage1.624681012V GS , GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic0.00220.0021.40.0018 1.20.0016 0.00140.001210.80.001510 15 20 25 30 I D , DRAIN CURRENT(A)Figure 5. Typical On-Resistance vs. Drain Currentand Temperature0.6-50-25 0 25 50 75 100 125 150 T J , JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation withTemperature-55= -15A= -20AR D S (O N ), D R A I N -S O U R C E R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)O N -R E S I S T A N C E (Ω)I D , D R A I N C U R R E N T (A )R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)T A I S , S O U R C E C U R R E N T (A )C T , J U N C T I O N C A P A C I T A N C E (p F )0.0034 10.0030.00260.80.60.00220.00180.40.0014 0.20.00130-50 -25 0 25 50 75 100 125 150 T J , JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature100000-50-25 0 25 50 75 100 125 150T A , AMBIENT TEMPERATURE (℃)Figure 8. Gate Threshold Variation vs AmbientTemperature25 20 15 100001050 00.2 0.4 0.6 0.8 1 V SD , SOURCE-DRAIN VOLTAGE (V)Figure 9. Diode Forward Voltage vs. Current10 100010004 8 12 16 20V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance8100641020 050 100 150 200 250 300 350 400 450 500Q g (nC)Figure 11. Gate Charge10.11 10100V DS , DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation AreaI D = -1mAI D = -250µAV DS = -10V, I D = -20A= 1s = 100ms = 10ms= 1msR D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)V G S (V )I D , D R A I N C U R R E N T (A )V G S (T H ), G A T E T H R E S H O L D V O L T A G E (V )10.10.010.0011E-061E-050.00010.001 0.01 0.1 1 101001000t1, PULSE DURATION TIME (sec)Figure 13. Transient Thermal Resistancer (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E1 b( 8x)1Package Outline DimensionsPlease see /package-outlines.html for the latest version.b1( 8x)PowerDI5060-8 (Type K)。