ANSYSSimplorerIGBT参数化建模工具

– A, B, F
• Basic dynamic model :
–mic model :
– A, C, E, F
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© 2011 ANSYS, Inc.
May 31, 2013
Prof. J. Aurich
IGBT device level model in Simplorer
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© 2011 ANSYS, Inc.
May 31, 2013
Prof. J. Aurich
IGBT device level model in Simplorer
Overview of differences between IGBT models : Power injection and loss calculation
Prof. J. Aurich
11 © 2011 ANSYS, Inc. May 31, 2013
IGBT device level model in Simplorer
• Family model conception,
•
•
Trade-off between simulation speed and accuracy,
– P(t) injection calculated from simulated current and voltage waveforms, – Power follows the simulated switching waveforms.
15 © 2011 ANSYS, Inc. May 31, 2013
• Drawbacks
– Tail current • During turn-off, • Impacts the switching speed, • Impacts the on-state and switching losses. – Parasitic Thyristor latch-up • Loss of control of the device.
3 models based on 2 basic approaches :
– Average IGBT, – Dynamic IGBT (basic and advanced).
• Scalable accuracy of the IGBT model.
NIGBT_Average_T1 NIGBT_Average_T1 NIGBT_Average_T1 NIGBT_BasicDyn1 NIGBT_BasicDyn1NIGBT_AdvDyn1 NIGBT_BasicDyn1NIGBT_AdvDyn1 NIGBT_AdvDyn1
Gate
Cathode
• Forward biased
MOS channel
N+ P P+
N+ P
– – – –
Space Charge zone creation, MOS channel : e- injection, « Anode junction » biased : h+ injection, Storage region.
Simplorer IGBT参数化建模
ANSYS 中国
1 © 2011 ANSYS, Inc. May 31, 2013
Overview
Introduction on IGBT power device IGBT device level model in Simplorer (Prof. J. Aurich)
• Basic dynamic model :
– Electrical transient waveforms calculated, – Target on loss energy, – Used for approximation.
• Basic dynamic model :
– Power loss is direct fitting target, – P(t) injection calculated from simulated current and voltage waveforms.
• Advanced dynamic model :
Prof. J. Aurich
IGBT device level model in Simplorer
Overview of differences between IGBT models : Waveforms, switching times
• Average IGBT model :
– Not focus on time values, – No transient calculation.
IGBT principle : what is an IGBT
• Combination of two other devices :
• Bipolar transistor
- Low on-state voltage drop
• MOSFET transistor - Voltage controlled device - High value of Ron - High switching speed
Overview of differences between IGBT models :
• Working point dependancy :
– Nominal working point stands for the normal operating conditions of the device found in the datasheet, – Includes the nominal blocking voltage, – Includes the nominal load current, – Includes the nominal junction temperature, – Includes the nominal drive conditions (gate resistors, drive voltage, gate stray inductances, input capacity) : gate voltage slope.
View of a planar type NPT IGBT with its equivalent electrical circuit
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7 © 2011 ANSYS, Inc. May 31, 2013
Introduction on IGBT power device
IGBT principle
Concept and differences overview Insight of the model
Modelling using the characterization tool
Example of a basic dynamic IGBT model creation
2 © 2011 ANSYS, Inc. May 31, 2013
- 2 types of carriers - Relatively low frequency
I.G.B.T (Insulated Gate Bipolar Transistor)
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6 © 2011 ANSYS, Inc. May 31, 2013
Introduction on IGBT power device
IGBT principle • Structure and features
– MOS gate (low drive power, gate controlled turn-off capability), – Wide and low doped N- base region => large blocking voltage, – P+ emitter : holes injection under high level injection => Conductivity modulation, – High forward conduction current density, – Increase of swtiching time during turnoff
SCZ
p p J p qD p E x U T n n J n qDn E U x T
J tot
Qs Qs τ t
N- Base
Qs
2 p p p D 2 x τ t
P+ Emitter Anode
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9 © 2011 ANSYS, Inc. May 31, 2013
Introduction on IGBT power device
IGBT principle • 2 main technologies :
– Planar type
• NPT (Non Punch Through), • PT (Punch Through), • SPT (Soft Punch Through). MOS channel
Gate
Gate
– Trench type
• Trench FS (Field Stop), • CST (Carrier Stored Trench-gate), …
Gate
Gate
MOS channel
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10 © 2011 ANSYS, Inc. May 31, 2013
IGBT device level model in Simplorer
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© 2011 ANSYS, Inc.
May 31, 2013
Prof. J. Aurich
IGBT device level model in Simplorer