Flux Doubling - Powering Silicon Valley San Jose State University通量加倍-硅谷圣何塞州立大学供电

合集下载

Silicon Labs推出具有高时钟树功能集成度的低抖动时钟缓冲器

Silicon Labs推出具有高时钟树功能集成度的低抖动时钟缓冲器

Silicon Labs推出具有高时钟树功能集成度的低抖动时钟缓
冲器

【期刊名称】《中国电子商情:基础电子》
【年(卷),期】2012(000)011
【摘要】SiliconLaboratories推出业界首款通用时钟缓冲器(clockbuffer),可以用单颗IC替代多颗LVPECL、LVDS、CML、HCSL和LVCMOS缓冲器,而无需多个不同格式缓冲器。

新型Si533xX系列产品集成常见的时钟树功能,包括时钟分配、时钟复用、时钟分频、格式转换和电平转换。

【总页数】1页(P86-86)
【作者】无
【作者单位】不详
【正文语种】中文
【中图分类】TN402
【相关文献】
1.Silicon Labs推出具有高时钟树功能集成度的低抖动时钟缓冲器 [J],
2.Silicon Labs推出PCI Express Gen5时钟和缓冲器 [J],
3.Silicon Labs推出高时钟树功能集成度的低抖动时钟缓冲器 [J],
4.Silicon Labs推出业界首家性能和功耗领先的PCI Express Gen 5时钟和缓冲器
[J], Silicon Labs
5.Silicon Labs Si5332产品系列替代时钟、振荡器、缓冲器和完整时钟树 [J],因版权原因,仅展示原文概要,查看原文内容请购买。

Silicon Labs Z-Wave 产品说明书

Silicon Labs Z-Wave 产品说明书

Effective Date:Bulletin Issue Date:5/7/20185/7/2018Description of ChangeSilicon Labs Acquires Sigma Designs Z-Wave Products 180507297 Addendum to PB# 180423283 Acquisition of Sigma Designs Z-Wave ProductsProduct IdentificationZWave Part # Silicon Labs Part #SD3502A-CNE3R SD3502A-CNE3RSD3503A-CNE3R SD3503A-CNE3RZM3102AE-CME1 ZM3102AE-CME1ZM3102AE-CME1R ZM3102AE-CME1RZM3102AH-CME1 ZM3102AH-CME1 ZM3102AU-CME1 ZM3102AU-CME1ZM3102AU-CME1R ZM3102AU-CME1RZM5101A-CME3R ZM5101A-CME3RZM5202AE-CME3R ZM5202AE-CME3RZM5202AH-CME3R ZM5202AH-CME3RZM5202AU-CME3R ZM5202AU-CME3RZM5304AE-CME3R ZM5304AE-CME3RReason for ChangeThis Addendum is being issued to PB#180423283 to include Z-Wave top marking format changes for SD3502A-CNE3R, SD3503A-CNE3R, ZM5101A-CME3R and ZW0301A-CNE1 to Silicon Labs' format. Please refer to Appendix for details. On Apr 18, 2018, Silicon Labs completed the transaction to acquire Sigma Designs Z-Wave. The integration of Z-Wave products into Silicon Labs will result in a few relatively minor changes as described below:1. Existing customer purchase orders shipped beginning on April 23, 2018 will be fulfilled and shipped by the samemanufacturer, with additional ship-from locations, but done so through the Silicon Labs ERP system.Addition ship-from locations:Silicon Laboratories International Pte. Ltd.18 Tai Seng Street #05-01,18 Tai Seng, Singapore 539775Advanced Semiconductor Engineering ChungLi (ASECL)No. 550, Section 1, Zhonghua Road, Zhongli District,Taoyuan City, Taiwan 3202. The Z-Wave labels will transition as inventory is depleted to standard Silicon Labs labels.3. All boxes, reels, trays, and moisture barrier bags will transition to Silicon Labs standard materials as inventory is depleted.4. The commercial invoice (pro forma) and packing list will change to the Silicon Labs standard format starting April 23, 2018.5. The Z-Wave product top marking for SD3502A-CNE3R, SD3503A-CNE3R, ZM5101A-CME3R and ZW0301A-CNE1 will transition as inventory is depleted to standard Silicon Labs top marking format. The rest remains unchanged.Z-Wave ordering part numbers [OPN] will remain the same after the transition.This change is considered a minor change which does not affect form, fit, function, quality, or reliability. The information is being provided as a customer courtesy.Please contact your local Silicon Labs sales representative with any questions about this notification. A list of Silicon Labs sales representatives may be found at .Customer Actions Needed:If the customer performs an incoming inspection that includes analysis of product top marking, labels and/or shipping documents, then those inspection instructions should be updated.User RegistrationRegister today to create your account on . Your personalized profile allows you to receive technical document updates, new product announcements, “how-to” and design documents, product change notices (PCN) and other valuable content available only to registered users. /profilea) Silicon Labs Inner Box label (HU) – Will be placed on Reel, Moisture Barrier Bag, Inner Boxb) Silicon Labs Outer Box label - will be placed on Outer Boxc) Silicon Labs Outer Box label - will be placed on Outer Boxd) Silicon Labs Commercial Invoicee) Silicon Labs Packing Listf) Marking change - SD3502A-CNE3Rg) Marking change - SD3503A-CNE3Rh) Marking change - ZM5101A-CME3Ri) Marking change - ZW0301A-CNE1Silicon Laboratories Inc.400 West Cesar ChavezAustin, TX 78701 DisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules andperipherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Labs shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any Life Support System without the specific written consent of Silicon Labs. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.Trademark InformationSilicon Laboratories Inc.® , Silicon Laboratories®, Silicon Labs®, SiLabs® and the Silicon Labs logo®, Bluegiga®, Bluegiga Logo®,Clockbuilder®, CMEMS®, DSPLL®, EFM®, EFM32®, EFR, Ember®, Energy Micro, Energy Micro logo and combinations thereof, "the world’s most energy friendly microcontrollers", Ember®, EZLink®, EZRadio®, EZRadioPRO®, Gecko®, ISOmodem®, Micrium, Precision32®, ProSLIC®, Simplicity Studio®, SiPHY®, Telegesis, the Telegesis Logo®, USBXpress®, Zentri and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is aregistered trademark of ARM Limited. All other products or brand names mentioned herein are trademarks of their respective holders.。

Silicon Laboratories MGM240P 产品说明书

Silicon Laboratories MGM240P 产品说明书

Wireless Gecko Multi-Protocol Module MGM240P ErrataThis document contains information on the MGM240P errata. The latest available revision of this device is revision V3. Errata that have been resolved remain documented and can be referenced for previous revisions of this device.Errata effective date: December, 2022.Errata Summary 1. Errata SummaryThe table below lists all known errata for the MGM240P and all unresolved errata of the MGM240P.Table 1.1. Errata Overview2. Current Errata Descriptions2.1 CUR_E302 – Extra EM1 Current if FPU is Disabled2.2 EUSART_E302 — Synchronous EUSART Module Disable Lockup2.3 EUSART_E303 — EUSART Receiver Enters Lockup State when Using Low Frequency IrDA Mode2.4 EUSART_E304 — Incorrect Stop Bits Lock Receiver2.5 IADC_E306 – Changing Gain During a Scan Sequence Causes an Erroneous IADC Result2.6 KEYSCAN_E301 – Unused Rows Are Not Properly Gated Off2.7 RADIO_E307 – BLE 2 Mbps and IEEE 802.15.4 Sensitivity and Selectivity Degradation with Crystals Below 39 MHz2.8 USART_E304 — PRS Transmit Unavailable in Synchronous Secondary Mode3. Resolved Errata DescriptionsThis section contains previous errata for MGM240P devices.For errata on the latest revision, refer to the beginning of this document. The device data sheet explains how to identify chip revision, either from package marking or electronically.3.1 CUR_E303 – Active Charge Pump Clock Causes High Current3.2 DCDC_E302 – DCDC Interrupts Block EM2/3 Entry or Cause Unexpected Wake-up3.3 EMU_E304 – Higher Than Expected EM2 Current3.4 RADIO_E304 – Zigbee Signal Identifier False Detection3.5 RADIO_E305 – Channel Clear Detection3.6 SE_E301 – Bricked Device After SE Firmware Upgrade or Bootloader UpgradeRevision History 4. Revision HistoryRevision 0.3December, 2022•Added EUSART_E303 and EUSART_E304.•Fixed workaround routing for KEYSCAN_E301.Revision 0.2August, 2022•Updated to module revisions V2 and V3.•Added and resolved CUR_E303.•Added IADC_E306.•Added KEYSCAN_E301.•Resolved RADIO_E304.•Resolved RADIO_E305.•Added RADIO_E307.•Added and resolved SE_E301.Revision 0.1November, 2021•Initial release.Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USA IoT Portfolio /IoT SW/HW /simplicity Quality /quality Support & Community /communityDisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software imple-menters using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and “Typical” parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice to the product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Without prior notification, Silicon Labs may update product firmware during the manufacturing process for security or reliability reasons. Such changes will not alter the specifications or the performance of the product. Silicon Labs shall have no liability for the consequences of use of the infor -mation supplied in this document. This document does not imply or expressly grant any license to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any FDA Class III devices, applications for which FDA premarket approval is required or Life Support Systems without the specific written consent of Silicon Labs. A “Life Support System” is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. Silicon Labs disclaims all express and implied warranties and shall not be responsible or liable for any injuries or damages related to use of a Silicon Labs product in such unauthorized applications. Note: This content may contain offensive terminology that is now obsolete. Silicon Labs is replacing these terms with inclusive language wherever possible. For more information, visit /about-us/inclusive-lexicon-projectTrademark InformationSilicon Laboratories Inc.®, Silicon Laboratories ®, Silicon Labs ®, SiLabs ® and the Silicon Labs logo ®, Bluegiga ®, Bluegiga Logo ®, EFM ®, EFM32®, EFR, Ember ®, Energy Micro, Energy Micro logo and combinations thereof, “the world’s most energy friendly microcontrollers”, Redpine Signals ®, WiSeConnect , n-Link, ThreadArch ®, EZLink ®, EZRadio ®, EZRadioPRO ®, Gecko ®, Gecko OS, Gecko OS Studio, Precision32®, Simplicity Studio ®, Telegesis, the Telegesis Logo ®, USBXpress ® , Zentri, the Zentri logo and Zentri DMS, Z-Wave ®, and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. Wi-Fi is a registered trademark of the Wi-Fi Alliance. All other products or brand names mentioned herein are trademarks of their respective holders.。

半导体制造技术

半导体制造技术

Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons(不带电的中子), positively charged protons(带正电的质子)in the nucleus and negatively charged electrons(带负电的核外电子) that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally(无心的) turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier(隔离阻障)is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。

非晶硅fpd的工作流程

非晶硅fpd的工作流程

非晶硅fpd的工作流程The workflow of amorphous silicon FPD manufacturing involves several key stages. (非晶硅FPD的制造工作流程涉及几个关键阶段。

) The first step is the production of the amorphous silicon thin film, which is typically done through a process called chemical vapor deposition (CVD). (第一步是生产非晶硅薄膜,通常通过一种称为化学气相沉积(CVD)的过程来完成。

) This involves depositing a thin layer of amorphous silicon onto a substrate, such as a glass panel, using a reaction between a silicon-containing gas and a solid surface. (这涉及使用含硅气体和固体表面之间的反应,在基板上沉积一层非晶硅。

)The second stage in the workflow is the fabrication of the thin film transistor (TFT) array, which forms the backbone of the FPD. (工作流程的第二阶段是薄膜晶体管(TFT)阵列的制造,它构成FPD的基础。

) This involves using photolithography and etching techniques to define and pattern the transistor structures on the amorphous silicon thin film. (这涉及使用光刻和蚀刻技术来定义和图案化非晶硅薄膜上的晶体管结构。

Silicon Labs Thunderboard BG22 产品指南说明书

Silicon Labs Thunderboard BG22 产品指南说明书

BG22 Lab 1: Out-of-the-box Thunderboard Example ProjectThese lab procedures walkthrough programming the EFR32BG22, creating a Bluetooth beacon out of the box and introduce the development tools we will be using throughout this workshop, including our new EFR Connect Bluetooth development app.Getting StartedGetting StartedReview the following material before starting the Bluetooth 5 labs. Ensure that you have the correct hardware and software to successfully complete the labs.1.1 Hardware Requirements• 1 Thunderboard TM BG22 Kit• 1 Micro USB cable•iOS or Android Mobile device1.2 Software Requirements•Simplicity Studio v4 (Windows.exe, Mac.dmg, Linux .tar )o Bluetooth SDK 2.13.4o Gecko SDK Suite 2.7.4•EFR Connect Mobile App1.3 Simplicity Studio InstallationOption 1 New Installation – Offline Installer1. Install Simplicity Studio v4 b y launching Offline Installer (Windows.exe, Mac.dmg, Linux .tar )2. You’ll need to create or sign in with your accountOption 2 - Studio Previously Installed with Other SDKs1. Update existing Simplicity Studio Installation2. Update Protocol SDKs by clicking menu bar Help -> Update Software.a. Click Package Managerb. Click on tab for “SDKs” in Package Manager windowi. Select and Install Bluetooth SDK – 2.13.4.0ii. Select and Install Gecko Platform – 2.7.42 GATT CONFIGURATOR TO CUSTOMIZE BLUETOOTH PROJECTSSilicon Labs provides example projects that help evaluate different features of their Bluetooth solutions. This lab starts by loadinga wireless starter kit with an example of a Thermometer device. Using the default image in a large group can cause issues whenall of the devices broadcast the same device name.The GATT Configurator in Simplicity Studio makes it easier to modify the characteristics within a Bluetooth device. Complete the following steps to help distinguish your wireless starter kit.2.1 Create SoC Example ProjectWith Simplicity Studio open:1. Plug Wireless Starter Kit into USB Port. Click on the kit listed under Debug Adapters in upper left.2. Click on the Getting Started Tab from the Launcher dashboard in Simplicity Studio.3. Click on the SoC-Empty project listed under Software Examples.234. Click Yes when asked to switch to Simplicity IDE perspective and create the project.42.2 Modify GATT File for Empty ProjectThe BLE GATT Configurator window should be displayed in the Simplicity IDE once the project is created.(Note: If not shown, Click soc-empty.isc in the Project Explorer pane on the left)1. Click on Generic Access and then Device Name under the Custom BLE GATT list in upper right.2. Under Value settings, change the value from “Empty Example” to your INITIALS and set length to 2 bytes.123. Now add a new service by clicking on the Add button in the upper right corner and selecting New Service4. Select the new Service5. Add a new characteristic by clicking on the Add buttonin the upper right corner and selecting New Char-acteristic6. Now select the new characteristic7. Change the name to Read_Write8. Tick the checkbox next to the ID field in the Characteristic settings 9. Set the ID to “Read_Write ” 10. Set the Value to “R ”11. Set the Value type to utf-8 12. Set the Length to 113. Add Read property by clicking on the Add button in the Properties tab and selecting Read 14. Add Write property by clicking on the Add button in the Properties tab and selecting Write15. Click Generate to have the modifications updated in the project GATT file. 16. Click OK through the pop-up windows.452.3 Program Thunderboard with Empty Project1. Click Build icon in the tool bar at the top of the Simplicity IDE.The project will compile based on its build configuration.Note: You may need to select the project in the Project explorer view on left2. Press the Debug icon in the tool bar. This will flash the project onto the board if it was successfully built. Thisonly updates the program memory.Error: DP Write Failed - Press the Reset button on Thunderboard or unplug/replug then Flash again within 30 seconds.The Thunderboard demo app which ships on the boards goes into a low energy mode (EM2) after 30 seconds. When the device is in EM2, the debug interface is unavailable, and DP write fails. We can wake the device by resetting Thunderboard.3. A device selection prompt will appear select your J-Link device4. Next Click to Query the Lock Status5. Click OKNote: The prompt to select the device and the “Click to Query Lock Status” is expected for EFRBG22. Studio doesn’t know if the device is secure debug locked or not. The only way to know is to send a DCI command which will reset the part. So, we don’t allow any DCI commands to run in the background without user intervention. Studio caches the status, so you’ll only see this happen the first time you use the device and when you re-connect the device.6. Once the project is flashed, the Debug perspective will be shown. Click the Resume icon in the tool bar tohave the application start.7. Click the Disconnect icon in the tool bar to end the Debug session.12 34567READ/WRITE GATT CHARACTERISTICS WITH EFR CONNECT MOBILE APP3 READ/WRITE GATT CHARACTERISTICS WITH EFR CONNECT MOBILE APPWith the launch of BG22 we also release our new Bluetooth Development app, EFR ConncectNew features offered by EFR Connect:•Simultaneous connections with multiple Bluetooth Low Energy peripherals•Bluetooth communication logging•Advanced filtering for device discovery•Custom naming for services and characteristicsInstall/Open EFR Connect off your mobile app store to modify the name of your BG22 device.1. Press Develop and select Browser to view nearby Bluetooth Devices.2. Press the Filter tab to narrow your search and find your device.3. Input your INITIALs and press search4. Connect to your device to view the GATT Profile and Characteristics.Note: Generic Services (UUID: 1800) shown below will not appear on iOS as Apple does not these to be visible to applications.5. Tap Unknown Service and edit its name to Custom Service.6. Tap Unknown Characteristic and edit its name to Read_WriteNote: there is no standard way of displaying the names of custom services/characteristics. When the app sees a 128-bit UUID it knows that it's custom, so the name is always "Unknown service", this is the same for most generic BLE apps out there.The workaround is to have your own app and then write the service name into a characteristic so that your app can read it from there. EFRConnect takes care of this to ease development.7. Under you’re Read_Write characterstic Tap Write.8. Write W for your device to modify this characteristic and hit Save.EFRConnect can be used to devlop and test your GATT Services and Characteristics.234156 7 84 TROUBLESHOOTING4.1 Problem Occurred: ‘Programming Flash’ has encountered a problem. DP write failedThe Thunderboard demo app which ships on the boards goes into a low energy mode (EM2) after 30 seconds. When the device is in EM2, the debug interface is unavailable, and DP write fails. We can wake the device by resetting Thunderboard. Press the Reset button on Thunderboard and Flash again within 30 seconds.If problem persists, we can force a ‘D evice info’ DCI command to trigger a reset, which restores access.The most direct way to do this is to ‘Recover Bricked Device’ using Simplicity Commander Tool1. Navigate to Launcher Window2. Verify your device is selected3. Click Compatible Tools Tab4. Open Simplicity Commander5. Connect to Adapter6. Connect to Target7. Select Flash8. Click Recover bricked Device1 2345678Note: This erases the image on the chip including the bootloader which is necessary for Bluetooth applications. Next section goes over a quick way to flash a bootloader to your device.4.2 SoC-Empy Example Doesn’t Appear in EFR ConnectAfter flashing the Thunderboard with the SoC-Empty image, you may not see it in the EFR Connect App if the device has no bootloader present. The bootloader is a program stored in resereved flash memory that can initialize the device update firmware imgages and possible perform some integrity checks. Out of the box, the Thunderboard Demo includes a boot-loader image that will not be overwritten when a device is flashed with other examples unless otherwise dictacted by the user. To quickly replace a bootloader image, you can simply flash your device with one of the pre-built Demos in Simplicity Studio when you select your device from the debug adapters pane.Flashing SoC-Empty Demo will run the empty beacon on Thunderboard with ‘Empty Example’ as the device name and no additional GATT service added in Lab 1.1. Navigate to Launcher Window2. Verify your device is selected3. Click Getting Started tab4. Expand Bluetooth (SoC) Basic under Bluetooth SDK Demos5. Click ‘SoC –Empty’6. In the Pop-Up verify the mode is set to Run.7. Click Start.1234567。

Silicon Labs 智能电能计设计指南说明书

Sub-GHz Wir eless Desi gn Choi ces for Smart M eteri ngIntroductionThe worldwide focus on energy conservation in the last decade has led to tremendous growth in smart me-ter deployments, which help manage energy distribution and consumption more efficiently than traditional utility meters. The smart meter is a central device that bridges home energy management systems to long-range back haul communication to utility companies. Utility providers are adding more intelligence to smart meters to differentiate their offerings and allow their customers to make energy choices that best meet their needs. Bidirectional wireless communication enables accurate, real-time utility pricing information to be sent to consumers based on their energy consumption. While “time-of-day” pricing is common today, consumers can now make informed decisions on when to use major appliances in their homes to reduce their energy bill.The choice of wireless communications technology for a smart meter is a major decision that requires care-ful consideration of various design choices. The main factors in choosing the optimal communications tech-nology include cost of deployment, security, regulatory compliance, range and power consumption. Several communications technologies are available for wireless connectivity such as Wi-Fi, Bluetooth, ZigBee and sub-GHz wireless. For long-range applications such as the backhaul communication from the meter to a data concentrator and to other meters, sub-GHz technology is a popular choice because of its superior propagation characteristics, long-range performance, low-power operation and the broad access to unli-censed sub-GHz spectrum throughout the globe.Worldwide OpportunityOver the next few years, significant numbers of smart meters are expected to be deployed worldwide. The United Kingdom is one of the most-watched markets for smart meter rollouts with the goal of installing smart gas and electric meters in every home and small business by 2020. These deployments in the UK will use ZigBee as well as sub-GHz wireless communications to connect 30 million properties to the smart grid. Italy has the second largest number of gas meters in Europe at 21 million and plans to replace 80 percent of these with smart meters over the next five years. GrDF, a natural gas distributor in France, plans to install 11 million smart gas meters over six years starting in 2015. The 169 MHz and 868 MHz frequency bands are widely expected to be used in all EU smart meter implementations.According to a report by Pike Research, the installed base of smart meters in China will grow to 377 million units by 2020. The deployment will be split between various wired and wireless technologies, and a large portion of these meters is expected to use sub-GHz wireless devices in the 470-510 MHz band.TEPCO in Japan has announced plans to install 27 million smart meters over the next decade.Sub-GHz Wireless in Smart MetersSub-GHz wireless technology is present in almost all smart meters today. It is also easy to retrofit traditional meters with sub-GHz wireless communications modules and upgrade services or software over the air.The most common use of the sub-GHz link is for communication between meters and from the meter to a data collector or concentrator. The sub-GHz network is typically a proprietary network in an unlicensed ISM band such as 902-928 MHz in the US. An emerging trend has been the use of sub-GHz to communicate with in-home appliances. Industry alliances such as ZigBee and Wi-SUN are in the process of standardizing the sub-GHz communication protocol from the physical to the application layer for home energy monitoring systems. These alliances aim to realize interoperability between home appliances and smart meters from any manufacturer with the goal of accelerating the pace of adoption.Figure 1 shows a typical wireless smart meter system connecting the consumer to the utility.Figure 1. Typical Wireless Metering System ArchitectureLet’s take a closer look at some of the key considerations in designing a sub-GHz wireless solution for smart metering.Wireless RangeOne of the primary advantages of using sub-GHz wireless in any application is the long-range capability of this frequency band. Long-range systems reduce the cost of deployments as fewer concentrators and/or repeaters are required to serve the same number of smart meters. RF waves at lower frequencies can travel longer distances for a given output power and receiver sensitivity. This phenomenon can be seen by using the Friis formula for path loss and is governed by the laws of physics.Pr⁡〖=PtGtGr (λ/4πR)^2 〗where Pr is the received power, Pt is the transmitted power, Gt and Gr are th e antenna gains at the transmitter, and receiver, R is the distance between antennas and λ is the wave-length.As a general rule of thumb, a 6 dB increase in link budget will double the range in an outdoor, line-of-sight environment. Thus, the achievable range in the 169 MHz band is better than the 868/915 MHz bands as-suming all else is equal.As wireless system manufacturers try to squeeze every last dB of performance to get the best link budget, it is important to take into consideration other parameters to make an informed decision on trade-offs. In the commonly used GFSK modulation, lower data rates offer better sensitivity and hence longer range. How-ever, the time to transmit a packet at lower rates means that the transmitter and receiver will have to stay in active modes for a longer period of time, which can increase the overall power consumption. Increasing the transmit power of the radio is an easy way to increase range (“whoever shouts the loudest wins”), but this approach comes at the cost of higher power consumption. While several wireless ICs provide solutions with an integrated power amplifier (PA), the efficiency of the PA is a key differentiator. For example, Silicon Labs’ Si446x EZRadioPRO transceivers require only 18 mA to output +10 dBm or 85 mA to output +20 dBm in the 915 MHz frequency band.As range tests are highly sensitive to the environment and device parameters, it is often tricky to achieve an accurate, apples-to-apples comparison between RF transceiver solutions from different vendors. Care should be taken to ensure that the radio parameters such as frequency, transmit power, bandwidth, packet structure, antenna, and the method of calculating Bit Error Rate (BER) or Packet Error Rate (PER) are all comparable.Table 1 shows ideal link budgets for different data rates based on currently available transceiver solutions.Table 1. Wireless Link BudgetUltra-Low Power ConsumptionAnother key design consideration for a wireless smart meter is power consumption. Low-power operation is a critical concern for battery-powered water and gas meters and slightly less so for electric meters. Bat-tery-powered meters typically use Lithium-Thionyl-Chloride (LiSoCl2) batteries, which need to last for 15-20 years with low duty cycle operation. These LiSoCl2 batteries are significantly more expensive than the cost of the other components in the smart meter (roughly 7X-10X the cost of the transceiver IC). Material andlabor costs involved in replacing spent batteries frequently are also much higher than the cost of adding expensive batteries upfront.In gas and water meter systems, embedded components tend to spend a majority of time in low-power sleep or standby states so the current consumed in this state needs to be extremely low in the range of tens of nA. The active transmit and receive currents also need to be low especially at low data rates as they lead to longer transmission and reception times. For example, it will take 1.25 seconds (s) to transmit 1500 bytes at 9.6 kbps and only 0.024s at 500 kbps. PA efficiency is a key parameter that affects link and power budgets. A higher transmit power will increase the communication range at the expense of battery life. Some other parameters that should be considered are fast signal detection within a few bits of preamble, fast state transition times to wake up and go back to sleep, and the ability of the radio to autonomously duty-cycle the device without interrupting the host microcontroller (MCU) for every wakeup and sleep event.Another factor affecting system power consumption is the ability of the radio transceiver to offload the host MCU from typical packet handling functions such as preamble and sync word detection, Manchester coding and CRC calculations. Performing a majority of these functions in the radio allows the host MCU to spend less time processing the packet and frees up memory and MIPS to perform other functions or remain in a low-power state.As communication from the meter is periodic and typically on a very low duty-cycle, the low standby and receive current is a key benefit. Silicon Labs’ EZRadioPRO transceivers, for example (as shown in the Figure 2 architecture diagram), consume only 50 nA in standby mode. In addition, the device supports a fully con-figurable autonomous low duty cycle mode, enabling extremely low system power consumption.Figure 2. Architecture of Sub-GHz Wireless Transceiver Optimized for Smart MeteringRegulatory ComplianceOne of the more challenging aspects of using sub-GHz wireless technology is regulatory and standards com-pliance. For a designer trying to create a worldwide smart meter product, the 2.4 GHz band is available globally, and only the transmission power needs to be adjusted based on the region’s regulatory require-ments. However, sub-GHz frequencies vary depending on the region, making it more challenging for hard-ware and software designers. The ISM band, which is typically where sub-GHz radios operate, is license free. Each country allocates spectrum independently, and some of the common smart meter frequencies are shown in Table 2 and Figure 3.Table 2. ISM Frequency Bands by World RegionFigure 3. Sub-GHz Frequencies for Smart Meter Deployments Vary Widely by RegionLicensed sub-GHz bands are available in several countries for utilities that may be concerned with interfer-ence from other wireless devices. Typically these licensed bands have more stringent regulatory compliance requirements.For example, in the United States, FCC part 90 applies to a licensed frequency band around 460 MHz. Com-pliance with certain spectrum mask requirements such as mask D requires extremely good phase noise and narrowband performance at low data rates. More recent integrated sub-GHz transceivers, such as Silicon Labs’ Si446x EZRadioPRO devices, meet the regulatory requirements in this frequency band as well.Most smart meter designs have dedicated hardware for each region or frequency band rather than a com-mon design to meet all worldwide requirements. It is possible to limit the changes to just component values by selecting a common front end matching topology such that the same layout can be used for various re-gions. Typically the low-level PHY parameters must be optimized for each region to meet regulatory stand-ards requirements.Significant care must be taken to design a fully compliant solution with the lowest possible BOM cost. Har-monics and spurious emissions have caused many a sleepless night for designers. To ensure success at the compliance testing lab, it is critical to have accurate power control and filtering on the board to minimize emissions.Packet lengths, data rates and protocol choices such as frequency hopping and number of channels are largely constrained by regulatory requirements.Standards ComplianceIn addition to regulatory compliance, designers must be aware of several wireless standards and industry alliances such as IEEE 802.15.4g/e, Wireless M-Bus, ZigBee and Wi-SUN. All indications are that the industry is moving towards a standard solution based on IEEE 802.15.4 (g/e), which will eventually lead to more choices for consumers as it will enable interoperability among end products. This interoperability ultimately will give consumers the freedom to choose their preferred smart energy products, regardless of the utility that provides their energy. In Europe, Wireless M-Bus is the popular choice for smart meters but there is no official certification process. In the rest of the world, proprietary implementations dominate the deploy-ments today. A worldwide standard acceptable to major players in the smart grid space will help increase the pace of deployments.IEEE 802.15.4g specifies the physical layer, which is typically supported by the wireless transceiver itself. A majority of MAC layer functions are implemented in a software stack that runs on the host processor. For some applications that do not require interoperability, a standards-based software stack may not be opti-mal especially in terms of memory requirements and architectural choices such as a star or mesh network. Network latency and power consumption are key factors in determining the final implementation. In these cases, it is common to see proprietary software stacks or a hybrid solution that uses parts of 802.15.4g with a proprietary implementation of the upper layers. Silicon providers today offer standards-based and propri-etary stacks that are optimized to run on their MCUs and wireless transceivers and allow for some customi-zation as well. The key is to provide a clean and simple user interface that hides the complexity of the PHY and MAC within the stack.ConclusionRange, power consumption and standards compliance are some of the factors that define a sub-GHz wire-less design. Fast signal detection, ultra-low power standby currents in the tens of nanoamps and fasterstate transition times combined with a robust software solution are a few building blocks that enable new ways to improve smart meter efficiency at the system level. While Europe and the US are leading the way in deploying smart metering systems, the high-volume growth in this market is yet to come from emerging economies such as the BRIC nations. China and India, the world’s most populous countries with a huge need for secure, energy-efficient metering solutions, are experiencing a growing trend toward the adoption of “smart” sub-GHz wireless communications for smart meters.# # #Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size, analog intensive, mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class engineering team. Patent: /patent-notice© 2014, Silicon Laboratories Inc. ClockBuilder, CMEMS, DSPLL, Ember, EZMac, EZRadio, EZRadioPRO, EZLink, ISOmodem, Preci-sion32, ProSLIC, Silicon Laboratories and the Silicon Labs logo are trademarks or registered trademarks of Silicon Laboratories Inc. ARM and Cortex-M3 are trademarks or registered trademarks of ARM Holdings. ZigBee is a registered trademark of ZigBee Alliance, Inc. All other product or service names are the property of their respective owners.。

Silicon Labs Z-Wave 产品大规模生产指南说明书

Document No.:INS14285Version:11Description:-Written By:JFR;JSMILJANIC;CAOWENS;GAFARKASDate:2022-09-12Reviewed By:OPP;PSH;CAOWENS;JCCRestrictions:PublicThis document is the property of Silicon Labs. The data contained herein, in whole or in part, may not be duplicated, used or disclosed outside the recipient for any purpose. This restriction does not limit the recipient's right to use information contained in the data if it is obtained from another source without restriction.INS14285-11Manufacture Z-Wave product in volume2022-09-12INS14285-11Manufacture Z-Wave product in volume2022-09-12Table of Contents1INTRODUCTION (1)2MANUFACTURING FLOW FOR 700 SERIES (2)2.1End Devices (2)2.2Gateways (4)3MANUFACTURING FLOW FOR 800 SERIES (6)3.1End Devices (6)3.2Gateways (8)REFERENCES (11)INS14285-11Manufacture Z-Wave product in volume2022-09-12 1INTRODUCTIONThis document describes the manufacturing test flow for Z-Wave 700/800 SoC-based products.INS14285-11Manufacture Z-Wave product in volume2022-09-12 2MANUFACTURING FLOW FOR 700 SERIESThe following section describe the manufacturing flow for end devices (ZGM130S, etc.) and gateways using EFR32ZG14. It is not recommended to use the Silicon Labs public signing key and encryption key used in the apps.2.1End DevicesThe manufacturing production test flow for end devices ZGM130S (based on EFR32FG13) must incorporate the following steps:∙Perform product-specific testing such as I/O, etc. Refer to UG409: RAILtest User’s Guide under the SDK documentation section in the Simplicity Studio distribution.∙Perform RF testing, etc. Use RAILtest. Refer to [7] regarding RF testing. The 500 Series ApplicationTestPoll function is not available in the 700.∙Set the manufacturing codes:1.Download an OTA bootloader to the SoC target via the Serial Wire Debug (SWD) interface.2.Write your own public signing key and encryption key to the SoC target via the SWD interface. Areadme.txt file in the Z-Wave SDK release describes how to generate your own keys and write them to the device Lock Bits Page. The path to the readme file in the Z-Wave SDK release is:<Your ZWAVE Installation Directory>\BootLoader\sample-keys\3.Download the application firmware to the SoC target via the SWD interface. Do not set the LockBit in this step.INS14285-11Manufacture Z-Wave product in volume2022-09-124.The application in the SoC signals when the security materials, etc., are in place in the Lock BitPage via the manufacturing token TOKEN_MFG_ZW_INITIALIZED. The following steps areperformed in the SoC at the application startup:a.If public/private keypair and QR code are already present in the Lock Bit page (checkmanufacturing token TOKEN_MFG_ZW_INITIALIZED), jump to the last step continuingnormal operation. Refer to [1] for details about manufacturing tokens.b.Calculate the public/private key based on Curve25519.c.Construct the QR code using the public key, product type, and product ID (latter two fromthe application) as described in [2].d.Calculate the SHA-1 checksum as per [2] and incorporate it in the QR code.e.Write the QR code to the Lock Bit Page as manufacturing tokenTOKEN_MFG_ZW_QR_CODE.f.Write the private/public keypair to the Lock Bit Page as manufacturing tokensTOKEN_MFG_ZW_PRK and TOKEN_MFG_ZW_PUK.g.Write completion of the Lock Bit Page initialization as manufacturing tokenTOKEN_MFG_ZW_INITIALIZED. This token can be used to sync completion of data to LockBits Page in a production system.h.Continue normal startup.5.Read the QR code from the SoC.6.Set the Lock Bit Page [6] to protect IP and security material against untrusted entities.bel the product with the QR code. Refer to [5] for details.The QR code format enables customization of the QR code with extra TLVs (e.g.,MaxInclusionRequestInterval, proprietary serial number, etc.) instead of using the internallygenerated one. The manufacturing line programmer must then read out the public key, etc.,compose the wanted QR code, and print it to a label. The new QR code can also be stored in the User Data Page, for example.Set the following registers in the Lock Bit Page [6] as a minimum to protect IP and securitymaterial:DLW = Disable the debug port by clearing the four LSBsULW = IgnoreMLW = Optional (disable mass erase through MSC)ALW = Optional (disallow a mass erase operation)CLW1 = IgnoreCLW2 = IgnorePLW[0…121] = IgnoreINS14285-11Manufacture Z-Wave product in volume2022-09-12 2.2GatewaysThe manufacturing production test flow for gateways using EFR32ZG14 (based on EFR32FG14) must incorporate the following steps:1.Product-specific testing such as I/O, etc. Refer to ‘Using RAIL Test’ under the SDK documentationsection in the Simplicity Studio distribution.2.Calibrate the 39MHz crystal used on each EFR32ZG14-based product to ensure the RF frequency iscorrect, see [4]. The crystal calibration can be done by using a RailTest firmware, see KB - Z-Wave 700: EFR32ZG14 CTUNE Calibration.3.The RF performance testing for each product can also be done by using the same RailTest firmware.Refer to [7] regarding RF performance testing. The 500 Series ApplicationTestPoll function is not available in 700.4.Download Z-Wave OTW bootloader to the SoC target via Serial Wire Debug (SWD) interface.5.Generate your own public signing key and encryption key and write them to the SoC target via theSerial Wire Debug (SWD) interface. These keys are necessary for upgrading the firmware in the field. Following simplicity commander commands will be used for writing keys into the device’s Lock Bits Page.mander flash --tokengroup znet --tokenfile zg14_encrypt.key --tokenfile zg14_sign.key-tokens.txt -d EFR32ZG142.The key files (do not use the Silicon Labs keys) are locked in the Z-Wave release in the followingpath on your SDK installation<Your ZWAVE Installation Directory>\BootLoader\ZG14-keys\6.Download the application firmware to the SoC target via the Serial Wire Debug (SWD) interface. Donot set the Lock Bit in this step.7.The application in the SoC signals when security materials, etc., are in place in the Lock Bit Page viamanufacturing token TOKEN_MFG_ZW_INITIALIZED. The following steps are performed in the SoC at the application startup:1.If the public/private keypair and QR code are already present in the Lock Bit page (Checkmanufacturing token TOKEN_MFG_ZW_INITIALIZED), jump to the last step continuing normaloperation. Refer to [1] for details about manufacturing tokens.2.Calculate the public/private key based on Curve25519.3.Construct the QR code using public key, product type, and product ID (latter two fromapplication) as described in [2].4.Calculate SHA-1 checksum as per [2] and incorporate it in the QR code.5.Write the QR code to Lock Bit Page as manufacturing token TOKEN_MFG_ZW_QR_CODE.6.Write private/public keypair to the Lock Bit Page as manufacturing tokensTOKEN_MFG_ZW_PRK and TOKEN_MFG_ZW_PUK.INS14285-11Manufacture Z-Wave product in volume2022-09-127.Write completion of Lock Bit Page initialization as manufacturing tokenTOKEN_MFG_ZW_INITIALIZED. This token can be used to sync completion of data to the Lock Bits Page in a production system.8.Continue normal startup.8.Read the QR code from the SoC.9.Set the Lock Bit Page [6] to protect IP and security material against untrusted entities.bel the product with the QR code. It is optional to label a gateway in case the QR code isaccessible via the UI. Refer to [5] for details.The QR code format enables customization of the QR code with extra TLVs (e.g.,MaxInclusionRequestInterval, proprietary serial number, etc.) instead of using the internallygenerated one. The manufacturing line programmer must then read out the public key, etc., and compose the wanted QR code and print it to a label. The new QR code can also be stored in, e.g., the User Data Page.Set the following registers in the Lock Bit Page [6] as a minimum to protect IP and security material: DLW = Disable the debug port by clearing the four LSBsULW = IgnoreMLW = Optional (disable mass erase through MSC)ALW = Optional (disallow a mass erase operation)CLW1 = IgnoreCLW2 = IgnorePLW[0…121] = IgnoreINS14285-11Manufacture Z-Wave product in volume2022-09-12 3MANUFACTURING FLOW FOR 800 SERIESThe following section describe the manufacturing flow for end devices and gateways using 800 series. It is not recommended to use the Silicon Labs public signing key and encryption key used in the apps. Further reading about the available security features and their usage can be found in the UG103.05: IoT Endpoint Security Fundamentals.3.1End DevicesThe manufacturing production test flow for end devices based on 800 series must incorporate the following steps:∙Update the SE firmware, further readings AN1222: Production Programming of Series 2 Devices∙Update the Bootloader, further readings AN1222: Production Programming of Series 2 Devices∙Perform product-specific testing such as I/O, etc. Refer to UG409: RAILtest User’s Guide under the SDK documentation section in the Simplicity Studio distribution.∙Perform RF testing, etc. Use RAILtest. Refer to [7] regarding RF testing. The 500 Series ApplicationTestPoll function is not available in the 800.∙Set the manufacturing codes:1.Write your own public signing key and encryption key to the SoC target via the SWD interface. Areadme.txt file in the Z-Wave SDK release describes how to generate your own keys and write them to the device Lock Bits Page. The path to the readme file in the Z-Wave SDK release is:<Your ZWAVE Installation Directory>\BootLoader\sample-keys\2.Download the application firmware to the SoC target via the SWD interface.INS14285-11Manufacture Z-Wave product in volume2022-09-123.The application in the SoC signals when the security materials, etc., are in place in the Lock BitPage via the manufacturing token TOKEN_MFG_ZW_INITIALIZED. The following steps areperformed in the SoC at the application startup:i.If public/private keypair and QR code are already present in the Lock Bit page (checkmanufacturing token TOKEN_MFG_ZW_INITIALIZED), jump to the last step continuingnormal operation. Refer to [1] for details about manufacturing tokens.j.Calculate the public/private key based on Curve25519.k.Construct the QR code using the public key, product type, and product ID (latter two from the application) as described in [2].l.Calculate the SHA-1 checksum as per [2] and incorporate it in the QR code.m.Write the QR code to the Lock Bit Page as manufacturing tokenTOKEN_MFG_ZW_QR_CODE.n.Write the private/public keypair to the Lock Bit Page as manufacturing tokensTOKEN_MFG_ZW_PRK and TOKEN_MFG_ZW_PUK.o.Write completion of the Lock Bit Page initialization as manufacturing tokenTOKEN_MFG_ZW_INITIALIZED. This token can be used to sync completion of data to LockBits Page in a production system.p.Continue normal startup.4.Read the QR code from the SoC.bel the product with the QR code. Refer to [5] for details.The QR code format enables customization of the QR code with extra TLVs (e.g.,MaxInclusionRequestInterval, proprietary serial number, etc.) instead of using the internallygenerated one. The manufacturing line programmer must then read out the public key, etc.,compose the wanted QR code, and print it to a label. The new QR code can also be stored in the User Data Page, for example.∙Perform Key Provisioning, further readings AN1222: Production Programming of Series 2 Devices∙Set the debug access, further reading AN1190: Series 2 Secure Debug∙Set the Anti-Tamper protection, further reading AN1247: Anti-Tamper Protection Configuration and UseINS14285-11Manufacture Z-Wave product in volume2022-09-12 3.2GatewaysThe manufacturing production test flow for gateways based on 800 series must incorporate the following steps.Further reading about the available security features and their usage can be found in the UG103.05: IoT Endpoint Security Fundamentals.INS14285-11Manufacture Z-Wave product in volume2022-09-12∙Update the SE firmware, further readings AN1222: Production Programming of Series 2 Devices∙Update the Bootloader, further readings AN1222: Production Programming of Series 2 Devices∙Product-specific testing such as I/O, etc. Refer to ‘Using RAIL Test’ under the SDK documentation section in the Simplicity Studio distribution.∙Calibrate the 39MHz crystal used on each EFR32ZG14-based product to ensure the RF frequency is correct, see [4]. The crystal calibration can be done by using a RailTest firmware, see KB - Z-Wave 700: EFR32ZG14 CTUNE Calibration.∙The RF performance testing for each product can also be done by using the same RailTest firmware.Refer to [7] regarding RF performance testing. The 500 Series ApplicationTestPoll function is not available in 800 series.∙Generate your own public signing key and encryption key and write them to the SoC target via the Serial Wire Debug (SWD) interface. These keys are necessary for upgrading the firmware in the field. Following simplicity commander commands will be used for writing keys into the device’s Lock Bits Page.mander flash --tokengroup znet --tokenfile zg14_encrypt.key --tokenfile zg14_sign.key-tokens.txt -d EFR32ZG142.The key files (do not use the Silicon Labs keys) are locked in the Z-Wave release in the followingpath on your SDK installation<Your ZWAVE Installation Directory>\BootLoader\ZG14-keys\∙Download the application firmware to the SoC target via the Serial Wire Debug (SWD) interface.∙The application in the SoC signals when security materials, etc., are in place in the Lock Bit Page via manufacturing token TOKEN_MFG_ZW_INITIALIZED. The following steps are performed in the SoC at the application startup:1.If the public/private keypair and QR code are already present in the Lock Bit page (Checkmanufacturing token TOKEN_MFG_ZW_INITIALIZED), jump to the last step continuing normaloperation. Refer to [1] for details about manufacturing tokens.2.Calculate the public/private key based on Curve25519.3.Construct the QR code using public key, product type, and product ID (latter two fromapplication) as described in [2].4.Calculate SHA-1 checksum as per [2] and incorporate it in the QR code.5.Write the QR code to Lock Bit Page as manufacturing token TOKEN_MFG_ZW_QR_CODE.6.Write private/public keypair to the Lock Bit Page as manufacturing tokensTOKEN_MFG_ZW_PRK and TOKEN_MFG_ZW_PUK.7.Write completion of Lock Bit Page initialization as manufacturing tokenTOKEN_MFG_ZW_INITIALIZED. This token can be used to sync completion of data to the LockBits Page in a production system.INS14285-11Manufacture Z-Wave product in volume2022-09-128.Continue normal startup.∙Read the QR code from the SoC.∙Label the product with the QR code. It is optional to label a gateway in case the QR code is accessible via the UI. Refer to [5] for details.The QR code format enables customization of the QR code with extra TLVs (e.g.,MaxInclusionRequestInterval, proprietary serial number, etc.) instead of using the internallygenerated one. The manufacturing line programmer must then read out the public key, etc., and compose the wanted QR code and print it to a label. The new QR code can also be stored in, e.g., the User Data Page.∙Perform Key Provisioning, further readings AN1222: Production Programming of Series 2 Devices∙Set the debug access, further reading AN1190: Series 2 Secure Debug∙Set the Anti-Tamper protection, further reading AN1247: Anti-Tamper Protection Configuration and UseINS14285-11Manufacture Z-Wave product in volume2022-09-12 REFERENCES[1]Silicon Labs, SDS14306, Software Design Specification, Z-Wave 700 Lock Bits and User Data PageContents.[2]Silicon Labs, INS13975, Instruction, SmartStart Production Control.[3][4][5][6][7][8]Silicon Labs, UG103.05, IoT Endpoint Security Fundamentals.[9]Silicon Labs, AN1222, Production Programming of Series 2 Devices.[10]Silicon Labs, AN1190, Series 2 Secure Debug.Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USA IoT Portfolio /IoT SW/HW /simplicity Quality /quality Support & Community /communityDisclaimerSilicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software imple-menters using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and “Typical” parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice to the product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Without prior notification, Silicon Labs may update product firmware during the manufacturing process for security or reliability reasons. Such changes will not alter the specifications or the performance of the product. Silicon Labs shall have no liability for the consequences of use of the infor -mation supplied in this document. This document does not imply or expressly grant any license to design or fabricate any integrated circuits. The products are not designed or authorized to be used within any FDA Class III devices, applications for which FDA premarket approval is required or Life Support Systems without the specific written consent of Silicon Labs. A “Life Support System” is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Silicon Labs products are not designed or authorized for military applications. Silicon Labs products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. Silicon Labs disclaims all express and implied warranties and shall not be responsible or liable for any injuries or damages related to use of a Silicon Labs product in such unauthorized applications. Note: This content may contain offensive terminology that is now obsolete. Silicon Labs is replacing these terms with inclusive language wherever possible. For more information, visit /about-us/inclusive-lexicon-projectTrademark InformationSilicon Laboratories Inc.®, Silicon Laboratories ®, Silicon Labs ®, SiLabs ® and the Silicon Labs logo ®, Bluegiga ®, Bluegiga Logo ®, EFM ®, EFM32®, EFR, Ember ®, Energy Micro, Energy Micro logo and combinations thereof, “the world’s most energy friendly microcontrollers”, Redpine Signals ®, WiSeConnect , n-Link, ThreadArch ®, EZLink ®, EZRadio ®, EZRadioPRO ®, Gecko ®, Gecko OS, Gecko OS Studio, Precision32®, Simplicity Studio ®, Telegesis, the Telegesis Logo ®, USBXpress ® , Zentri, the Zentri logo and Zentri DMS, Z-Wave ®, and others are trademarks or registered trademarks of Silicon Labs. ARM, CORTEX, Cortex-M3 and THUMB are trademarks or registered trademarks of ARM Holdings. Keil is a registered trademark of ARM Limited. Wi-Fi is a registered trademark of the Wi-Fi Alliance. All other products or brand names mentioned herein are trademarks of their respective holders.。

Silicon Labs Si534xH 相干光时钟产品介绍说明书

新闻稿Silicon Labs降低相干光市场定时技术的成本和复杂度-单芯片Si534xH时钟系列产品为100G/400G收发器提供高性能、频率灵活的定时解决方案-中国,北京-2016年4月26日-Silicon Labs(芯科科技有限公司,NASDAQ:SLAB)日前推出一系列简化100G/400G相干光线卡(coherent optical line card)和模块设计的抖动衰减时钟,通过提供高频率、灵活的时钟解决方案,显著降低系统成本和复杂度。

Silicon Labs新型Si534xH相干光时钟可以为数据转换器提供低抖动参考定时,可替代依赖于昂贵、大封装尺寸的压控SAW振荡器(VCSO)的分立定时解决方案。

与仅支持单一固定频率的VCSO不同,新型Si534xH时钟提供很宽的频率范围,支持频率高达2.7GHz,且无需改变物料清单(BOM)元器件。

Si5344H和Si5342H时钟提供最佳的频率灵活性和无与伦比的50fs RMS抖动性能。

这些时钟芯片简化了器件采购过程,可采用较短的、两周交货时间的单个时钟IC解决方案替代多个定制的、较长交货时间的VCSO。

凭借抖动衰减PLL、高频率输出驱动器、分数频率合成和数字控制振荡器(DCO)技术,Si534xH系列产品为相干光收发器应用提供所需的全部时钟功能,与竞争对手解决方案相比降低了40%的占用面积及40%的功耗。

获取Silicon Labs Si534xH相干光时钟的更多详细信息,包括数据手册、支持文档和开发工具等,请访问网站:/timing。

通信市场中最大增长驱动因素之一是业内城域网络和数据中心互联(DCI)领域从10G 到100G的转变。

相干光学技术可用于100G和400G应用,因为它使得服务提供商能够通过现有的光纤发送更多的数据,减少为带宽扩展而进行网络升级的成本和复杂性。

当前用于相干光的定时解决方案在成本和尺寸方面还未达到最优化,需要VCSO、时钟发生器和分立器件的多样化组合。

2SA733 半导体透封式PNP二极管技术参数与性能特性说明说明书

PNP Silicon Plastic-EncapsulateTransistorInternal StructureE1.EMITTER2.COLLECTOR3.BASE250mWFeatures•Halogen Free Available Upon Request By Adding Suffix "-HF"•Moisture Sensitivity Level 1•Epoxy Meets UL 94 V-0 Flammability Rating•Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Collector-Base Voltage V CBO -60V •Operating Junction Temperature Range: -55℃ to +150℃•Storage Temperature Range: -55℃ to +150℃•Thermal Resistance: 500℃/W Junction to AmbientParameterSymbol Rating Unit Maximum Ratings @ 25°C Unless Otherwise SpecifiedCollector-Emitter Voltage V CEO -50V Emitter-Base Voltage V EBO -5V P DContinuous Collector Current I C -100mA Power DissipationElectrical Characteristics @ T A =25°C Unless Otherwise SpecifiedParameterSymbol Min TypMaxUnits ConditionsI C =-5µA, I E =0Collector-Emitter Breakdown Voltage V (BR)CEO -50V I C =-1mA, I B =0Collector-Base Breakdown Voltage V (BR)CBO -60V I E =-50µA, I C =0Collector-Base Cutoff Current I CBO -0.1µA V CB =-60V, I E =0Emitter-Base Breakdown Voltage V (BR)EBO -5V V EB =-5V, I C =0DC Current Gainh FE 90600V CE =-6V, I C =-1mA Emitter-Base Cutoff Current I EBO -0.1µAI C =-100mA, I B =-10mA Collector-Emitter Saturation Voltage V CE(sat)-0.18-0.30V V CE =-6V,I C =-0.3mA,f=100Hz,R g =10KΩClassification of h FENoise FigureN F20dBV CE =-6V,I C =-10mA Collector Output Capacitance C ob 6pF V CB =-10V,I E =0,f=1MHzTransition Frequency f T 100MHz 90-180135-270200-400300-600Rank R Q P K RangeCurve Characteristics-0-2-4-6-8-10-1-2-3-0-4C o l l e c t o r C u r r e n t (m A )Collector-Emitter Voltage (V)Fig. 1 - Static Characteristics0100200300D C C u r r e n t G a i nCollector Current (mA)Fig. 2 - DC Current Gain Characteristics-1-0.3-100-150-100-10-500C o l l e c t o r -E m i t t e r S a t u r a t i o n V o l t a g e (m V )-10Collector Current (mA)Fig. 3 - Collector-Emitter Saturation Voltage Characteristics-1-0.2-100-150-400-800-0-1200B a s e -E m i t t e r S a t u r a t i o n V o l t a g e (m V )-10Collector Current (mA)Fig. 4 - Base-Emitter Saturation Voltage Characteristics-1-10-100-0.1-150-0.2-0.4-0.8-1.0-0.6Base-Emitter Voltage (V)C o l l c e t o r C u r r e n t (m A )Fig. 5 - Base-Emitter Voltage Characteristics02512515050100150200250C o l l e c t o r P o w e rD i s s i p a t i o n (m W )5075100Ambient Temperature (°C)Fig. 6 - Collector Power Derating CurveOrdering InformationDevice PackingPart Number-AP Ammo Packing: 20Kpcs/CartonPart Number-BP Bulk: 100Kpcs/CartonNote : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF***IMPORTANT NOTICE***Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the expresswritten approval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.。

  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
• The two halves of the primary should be bifilar wound to
minimize leakage inductance
• Push pull is favored for low voltage DC to DC converters.
Summary
• Current present in
secondary winding through D6 and L1
Q1 off, Q2 off
• L1 maintains current flow
in D5, D6, C7, and output load
• The current returns
through the center tap of the secondary windings through D5 and D6.
References
• Hart, Daniel W. Introduction to Power
Electronics. Upper Saddle River, NJ 2019
• Billings, Keith. Switchmode Power Supply
Handbook. 2nd Edition. McGraw Hall.
saturating for the first half cycle
Solutions for Flux Doubling
• Initial choice of working flux density swing
must be lower than B to reduce utility of the core
Schematic of Push Pull Converter
Q1 on, Q2 off Operation Mode
• Primary voltage
placed across P1a
• All windings will go
positive
• Collector of Q2 will
have 2Vcc
• Clo halves of the
primary winding to prevent excessive voltage overshoot on the collectors of the transistors during the turnoff transient
• Maximum flux density swing during steady state
half cycles will be 2B.
• Starting point for initial flux excursion will almost
be zero
• Sudden flux excursion of 2B would result in core
Duty Ratio Controlled Push Pull Converter
By Rafael Lim
Overview
• Operation of Push Pull Converter • Staircase Saturation • Flux Doubling • Design Considerations
• This will cause the core to quickly staircase into saturation
with successive cycles
Solutions
• Imbalances can be caused by variations in saturation
voltage and storage times between transistors, by differences in voltage drops of output rectifier diodes, or by differences in the winding resistance between the two halves of the primary or secondary winding. This will cause a DC bias towards saturation. To help reduce these problems need careful matching of drive and output components and introducing an air gap in the core.
• However, air gap reduces permeability, increasing
magnetization currents
Flux Doubling
• Under steady state operation, the starting position
for the flux at the beginning of each half cycle will be either +B or –B.
• Push pull is favored towards low voltage
DC to DC converters
• Issues with staircase saturation and flux
doubling must be considered is designing push pull converter
• Have the control circuit recognize the flux
doubling and reduce the pulse width until proper working conditions become established
Design Considerations
• D5 and D6 are on • Rectifier diodes have
forward voltages that are equal by opposite across secondary winding
Staircase Saturation
• Push pull converter vulnerable to saturation because there
is a direct DC path through main transformer primary and primary transistors
• If average volt-seconds across transformer when Q1 is on
is not equal to the average volt-seconds across transformer when Q2 is on, a net DC polarizing component will exist
相关文档
最新文档