txs0102 电平转换芯片
心率检测在智能手表上的应用_李志强

信号,然后接收组织的反射光信号。测量组织容积在 心脏搏动时的微小变化造成的反射光强度变化,来获
得脉搏波信号,通过检测峰值获得心率。 理论上还有一种做法是使用双波长光信号,通过
光电容积法测量获得血氧饱和度值,光信号需要进行
调制,双波长光线轮流照射组织,获得了每一时刻组 织对两种不同波长光线的反射光强度。然后进行解调 并根据朗伯比尔定律计算出血氧饱和度值。但是由于 该检测方法在手表上运用准确度不够,目前比较少产 品有做血氧检测。
心电图。 3. 反射式和电极式心率检测的优缺点对比如下
表 1:
表 1 反射式和电极式对比表
实现 心率 血氧 心电图 运动情况
操作便
功耗 抗干扰
方式 检测 监测 检测 下监测
利性
反射式 可以 可以 不行
可以
易受外来 单手操作, 发射光
光线,不同 主动读取 线,能
肤色,体毛 数据,便于 耗高
等影响 远程监控
参考文献:
[1]1. 神念科技官网 / [2]2. 北京君正官网 /cn/cn/proinfo.php? id=14&pid=782&fid=782
[3]3. 德 州 仪 器 官 网014 年第 6 期
F福 建 电 脑 UJIAN COMPUTER
心率检测在智能手表上的应用
李志强
(万利达集团有限公司 福建 厦门 361006)
【摘 要】:心率是反映人体循环系统机能的重要参数,经常性的对心率进行测量,了解身体机能状 况,对心脏工作异常有重要的预警作用。以智能手表为主的智能穿戴产品开始广泛增加心率检测功能。 本文首先介绍了心率检测的基本原理,接着讨论了在智能手表上反射式和电极式 2 种心率检测设计方 案各自特点并进行优劣对比,最后对设计方案的电路原理进行详细地分析和实验测试。
txs0108e 原理

txs0108e 原理
TXS0108E是一种8位级电压级转换器,通常用于在不同电压域之间进行逻辑电平转换。
它具有多种功能和特性,其原理涉及到几个方面。
首先,TXS0108E的原理之一是电压级转换。
它能够将高电平转换为低电平,反之亦然。
这意味着当输入端的电压高于VCC1时,TXS0108E会将其转换为VCC2的电平输出,反之亦然。
这种功能使得它在不同电压领域之间进行信号传输时非常有用。
其次,TXS0108E还具有双向传输功能。
这意味着它可以同时处理从A端到B端和从B端到A端的信号传输。
这种双向传输的特性使得它在双向通信系统中非常实用,例如I2C总线通信。
此外,TXS0108E还内置了电流保护功能,可以保护芯片免受短路和过电流的损害。
这使得它在复杂电路中更加可靠和安全。
另外,TXS0108E还具有低功耗特性,这使得它在便携设备和电池供电系统中能够节省能源,延长电池寿命。
总的来说,TXS0108E通过电压级转换、双向传输、电流保护和低功耗等原理,实现了在不同电压领域之间可靠、安全、高效地进行信号传输和通信的功能。
这些原理使得TXS0108E在电子设备中得到广泛应用,特别是在需要进行电压级转换和双向通信的场合。
双向电平转换芯片的参数介绍

双向电平转换芯片的参数介绍双向电平转换芯片是一种常用的电子元件,用于在不同电平之间进行转换和传递信号。
它可以将高电平转换为低电平,也可以将低电平转换为高电平,实现不同电平之间的互联和通信。
本文将对双向电平转换芯片的参数进行介绍。
我们来了解一下双向电平转换芯片的工作原理。
双向电平转换芯片通常由两个部分组成:输入端和输出端。
输入端接收来自外部的信号,输出端将信号传递给外部设备。
双向电平转换芯片通过内部电路将输入端的信号转换为输出端的信号,并确保信号在传递过程中保持稳定和准确。
在介绍双向电平转换芯片的参数之前,我们先来了解一下常见的电平标准。
常见的电平标准有TTL、CMOS和LVCMOS等。
TTL (Transistor-Transistor Logic)电平标准是一种数字电平标准,逻辑高电平为5V,逻辑低电平为0V。
CMOS(Complementary Metal-Oxide-Semiconductor)电平标准也是一种数字电平标准,逻辑高电平为Vcc(供电电压),逻辑低电平为0V。
LVCMOS(Low-Voltage CMOS)电平标准是一种低电压数字电平标准,逻辑高电平和逻辑低电平的电压范围根据具体型号而定。
接下来,我们来介绍一些常见的双向电平转换芯片参数。
1. 供电电压(Vcc):双向电平转换芯片的工作电压范围,一般为3.3V、5V或其他供电电压。
2. 逻辑电平转换:双向电平转换芯片能够将输入端的逻辑高电平转换为输出端的逻辑高电平,并将逻辑低电平转换为逻辑低电平,确保信号的准确传递。
3. 带宽:双向电平转换芯片的带宽指的是其能够传递的最高频率信号,通常以MHz为单位。
4. 上升时间和下降时间:双向电平转换芯片的上升时间和下降时间是指信号从逻辑低电平到逻辑高电平或从逻辑高电平到逻辑低电平的转换时间,一般以纳秒为单位。
5. 输入和输出电阻:输入电阻是指双向电平转换芯片输入端对外部信号的阻抗,输出电阻是指双向电平转换芯片输出端对外部设备的阻抗。
电平转换芯片内部原理

电平转换芯片内部原理
电平转换芯片是一种常见的电子元器件,它可以将输入的电信号转换为特定的电平输出信号,以满足各种电子产品对电平转换的需求。
其内部原理是通过使用特定的逻辑电路和模拟电路,在输入信号和输出信号之间建立一个适当的转换桥梁。
电平转换芯片主要分为数字电平转换芯片和模拟电平转换芯片
两种类型。
数字电平转换芯片内部包含多个逻辑门电路,可以将输入的数字信号转换为特定的数字电平输出信号,比如将3.3V的数字信
号转换为5V的数字信号。
而模拟电平转换芯片则通过运用模拟电路
来实现输入信号和输出信号之间的电平转换,比如将低电平输入信号转换为高电平输出信号。
电平转换芯片内部的核心器件是转换管,它是一种特殊的双极性晶体管。
当输入信号满足一定电平条件时,转换管会将其转化为输出信号。
同时,为了保证转换管的稳定性和可靠性,电平转换芯片内部通常还包括电源管理电路、过压保护电路、温度补偿电路等辅助电路。
总的来说,电平转换芯片通过逻辑电路和模拟电路实现不同电平之间的转换,从而满足不同电子产品对电平转换的需求。
其内部结构和原理的精细设计和制造,为现代电子技术的发展和应用提供了重要的技术支持。
- 1 -。
TXS0104E 4位双向多电压电平转换器说明书

适用于漏极开路和推挽应用的 TXS0104E 4 位双向多电压电平转换器1 特性•无需方向控制信号•最大数据速率–24Mbps(推挽)–2Mbps(开漏)•采用德州仪器 (TI) NanoFree™封装• A 端口支持 1.65V 至 3.6V 的电压,B 端口支持2.3V 至 5.5V 的电压 (V CCA≤ V CCB)•无需电源排序– V CCA或 V CCB均可优先斜升•闩锁性能超过 100mA,符合 JESD 78 II 类规范的要求•ESD 保护性能超过 JESD 22 规范要求–A 端口•2000V 人体放电模型 (A114-B)•200V 机器模型 (A115-A)•1000V 充电器件模型 (C101)–B 端口•15kV 人体放电模型 (A114-B)•200V 机器模型 (A115-A)•1000V 充电器件模型 (C101)•IEC 61000-4-2 ESD(B 端口)–±8kV 接触放电–±10kV 气隙放电2 应用•手持终端•智能手机•平板电脑•台式计算机3 说明这个 4 位同相转换器使用两个独立的可配置电源轨。
A 端口设计用于跟踪 V CCA。
V CCA支持从 1.65V 到 3.6V 范围内的任意电源电压。
V CCA必须低于或等于V CCB。
B 端口旨在用于跟踪 V CCB。
V CCB支持从 2.3V 到5.5V 范围内的任意电源电压。
这使得该器件可在 1.8V、2.5V、3.3V 和 5V 电压节点之间任意进行低压双向转换。
当输出使能端 (OE) 输入为低电平时,所有输出都被置于高阻抗状态。
TXS0104E 被设计成由 V CCA为 OE 输入电路供电。
为确保在加电或断电期间处于高阻抗状态,应将 OE 通过下拉电阻器接地;该电阻器的最小值取决于驱动器的拉电流能力。
(1)(1)如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。
OutputVoltage(V)Input Voltage (V)C001N 沟道晶体管的传输特征内容1 特性...................................................................................12 应用...................................................................................13 说明...................................................................................14 修订历史记录.....................................................................25 引脚配置和功能.................................................................4引脚功能:ZXU/ NMN.......................................................4引脚功能:DSBGA...........................................................5引脚功能:D 、PW 或 RGY...............................................66 规格...................................................................................76.1 绝对最大额定值...........................................................76.2 ESD 等级....................................................................76.3 建议运行条件..............................................................86.4 热性能信息:ZXU 、YZT 和 NMN...............................86.5 热性能信息:D 、PW 和 RGY.....................................96.6 电气特性......................................................................96.7 时序要求:V CCA = 1.8V ± 0.15V...............................106.8 时序要求:V CCA = 2.5V ± 0.2V.................................106.9 时序要求:V CCA = 3.3V ± 0.3V.................................106.10 开关特性:V CCA = 1.8V ± 0.15V.............................116.11 开关特性:V CCA = 2.5V ± 0.2V...............................136.12 开关特性:V CCA = 3.3V ± 0.3V...............................156.13 典型特性..................................................................167 参数测量信息...................................................................177.1 负载电路.. (17)7.2 电压波形....................................................................188 详细说明..........................................................................198.1 概述...........................................................................198.2 功能方框图................................................................198.3 特性说明....................................................................208.4 器件功能模式............................................................209 应用和实现.......................................................................219.1 应用信息....................................................................219.2 典型应用....................................................................2110 电源相关建议.................................................................2311 布局................................................................................2411.1 布局布线指南...........................................................2411.2 布局示例..................................................................2412 器件和文档支持.............................................................2512.1 文档支持..................................................................2512.2 接收文档更新通知...................................................2512.3 社区资源..................................................................2512.4 商标.........................................................................2513 接收文档更新通知..........................................................2514 支持资源........................................................................2515 静电放电警告.................................................................2516 术语表............................................................................2517 机械、封装和可订购信息.. (25)4 修订历史记录注:以前版本的页码可能与当前版本的页码不同Changes from Revision H (May 2018) to Revision I (October 2020)Page•更新了整个文档的表、图和交叉参考的编号格式................................................................................................1•添加了 NMN 封装 12 引脚 nFBGA......................................................................................................................4Changes from Revision G (September 2017) to Revision H (May 2018)Page•更改了开关特性:V CCA = 3.3V ± 0.3V 表中最大数据速率的最大值..................................................................15Changes from Revision F (December 2014) to Revision G (September 2017)Page•更改了“器件信息”表........................................................................................................................................1•通篇删除了 GXU 引用.........................................................................................................................................4•在绝对最大额定值 中添加了结温........................................................................................................................7•重新编排了电气特性 ..........................................................................................................................................9•将电压转换基础知识 添加到“相关文档”........................................................................................................25•添加了接收文档更新通知 和社区资源 (25)Changes from Revision E (August 2013) to Revision F (December 2014)Page•添加了引脚配置和功能 部分、处理等级 表、特性说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分......................................................1•从“绝对最大额定值”表中删除了封装热阻信息,并将其添加到“热性能信息”表中将 T stg 行移到了新的“处理额定值”表中...................................................................................................................................................7•将第一个开关特性表中最后 2 行的“最小值最大值”中的最大值 24 和最大值 2 更改到最小值列. (11)TXS0104EZHCSI61I – JUNE 2006 – REVISED OCTOBER 2020Changes from Revision D (May 2008) to Revision E (August 2013)Page•删除了订购表 (1)TXS0104EZHCSI61I – JUNE 2006 – REVISED OCTOBER 20205 引脚配置和功能图 5-1. ZXU 封装顶视图图 5-2. NMN 顶视图引脚功能:ZXU/ NMNTXS0104EZHCSI61I – JUNE 2006 – REVISED OCTOBER 2020图 5-3. YZT 封装 12 引脚 DSBGA 顶视图引脚功能:DSBGATXS0104EZHCSI61I – JUNE 2006 – REVISED OCTOBER 20201147823456131211109B1B2B3B4NCA1A2A3A4NCO EV G N DC C BV C C ANC - 无内部连接图 5-4. RGY 封装 14 引脚 VQFN 顶视图NC - 无内部连接图 5-5. D 和 PW 封装 14 引脚 SOIC 和 TSSOP 顶视图引脚功能:D 、PW 或 RGYTXS0104EZHCSI61I – JUNE 2006 – REVISED OCTOBER 20206 规格6.1 绝对最大额定值(1)(1)应力超出绝对最大额定值 下所列的值可能会对器件造成损坏。
双向电平转换芯片的参数介绍

双向电平转换芯片的参数介绍双向电平转换芯片是一种常用的电子元件,用于将不同电平之间进行转换。
它在数字电路中起到了重要的作用,能够实现不同电平之间的平滑过渡,确保电路的正常运行。
本文将就双向电平转换芯片的参数进行介绍。
我们来了解一下双向电平转换芯片的工作原理。
双向电平转换芯片可以将低电平转换为高电平,也可以将高电平转换为低电平。
其内部结构包含输入输出端口、电平转换电路和控制逻辑电路。
当输入端口的电平发生变化时,电平转换电路会进行相应的转换,并将转换后的电平输出到输出端口。
控制逻辑电路则负责控制电平的转换过程,确保电路能够按照预定的规则进行运行。
接下来,我们来介绍一下双向电平转换芯片的参数。
双向电平转换芯片的参数包括工作电压、转换速度、功耗和封装形式等。
首先是工作电压。
工作电压是指双向电平转换芯片能够正常工作的电压范围。
不同的双向电平转换芯片有不同的工作电压范围,常见的有3.3V和5V等。
在使用双向电平转换芯片时,需要根据实际情况选择合适的工作电压,以保证电路的正常运行。
其次是转换速度。
转换速度是指双向电平转换芯片完成电平转换所需的时间。
转换速度一般以纳秒为单位进行表示,常见的有10ns和20ns等。
转换速度越快,双向电平转换芯片的响应能力就越高,电路的工作效率也就越高。
再次是功耗。
功耗是指双向电平转换芯片在工作过程中消耗的能量。
功耗一般以毫瓦为单位进行表示,常见的有10mW和20mW等。
功耗越低,双向电平转换芯片的能耗就越小,对电路的供电要求也就越低。
最后是封装形式。
封装形式是指双向电平转换芯片的外观尺寸和引脚布局。
双向电平转换芯片的封装形式有多种,常见的有DIP封装和SOP封装等。
不同的封装形式适用于不同的应用场景,可以根据实际需求选择合适的封装形式。
双向电平转换芯片是一种重要的电子元件,能够实现不同电平之间的平滑过渡。
其参数包括工作电压、转换速度、功耗和封装形式等。
在选择和使用双向电平转换芯片时,需要根据实际情况考虑这些参数,以确保电路的正常运行。
txs0108epwr电平转换器工作原理

txs0108epwr电平转换器工作原理TXS0108EPWR电平转换器是一种常用的逻辑电平转换器,可以实现不同电平之间的转换,使得不兼容的电路之间可以进行正常的通信和连接。
本文将介绍TXS0108EPWR电平转换器的工作原理。
一、引言在现代电子设备中,不同的逻辑电平标准广泛存在。
例如,输入电平高电平标准可能是3.3伏特,而输出电平高电平标准可能是5伏特。
这就导致了不同电路之间的兼容性问题。
TXS0108EPWR电平转换器的出现解决了这个问题。
二、TXS0108EPWR电平转换器概述TXS0108EPWR是一款8位双向逻辑电平转换器,可以将5VTTL/CMOS电平转换为3.3V TTL/CMOS电平,同时还支持3.3VTTL/CMOS电平转换为5V TTL/CMOS电平。
它采用了高速自动方向控制功能,可以提供高达100Mbps的传输速率。
三、工作原理TXS0108EPWR电平转换器的工作原理非常简单。
它包括一个输入端和一个输出端,通过内部的逻辑电路将输入端的电平转换为输出端的电平。
1. 输入端电平转换当输入端电平为高电平时,TXS0108EPWR电平转换器会将其转换为目标电平,例如 3.3V。
转换的过程中,它会检测输入端电平的变化,并根据目标电平的要求,输出相应的电平。
通过适当的电平整形和放大,确保输出端能够正确接收到转换后的电平信号。
2. 输出端电平转换当输出端电平为高电平时,TXS0108EPWR电平转换器会将其转换为原始电平,例如5V。
同样地,它会检测输出端电平的变化,并根据原始电平的要求,输出相应的电平。
在这个过程中,电平整形和放大的作用依然十分重要,以确保输出端能够正常连接到接收端。
综上所述,TXS0108EPWR电平转换器通过内部的逻辑电路将输入端电平转换为输出端电平,实现不同电平标准之间的互通。
其高速自动方向控制功能,保证了信号的快速传输。
四、应用场景由于TXS0108EPWR电平转换器具有高速稳定的特点,广泛应用于各种电子设备中。
电平转换芯片

电平转换芯片
电平转换芯片是一种常见的电子元器件,用于实现不同电平之间的转换。
它可以将高电平信号转换为低电平信号,或者将低电平信号转换为高电平信号,以适应不同电路之间的连接和通信需求。
电平转换芯片通常由多个逻辑门组成,最常见的逻辑门有与门、或门、非门等。
这些逻辑门由晶体管和其他电子元件组成,通过在不同的逻辑门之间连接,可以实现不同电平之间的转换。
电平转换芯片的工作原理是基于逻辑门的工作原理。
例如,在一个与门内部,当所有输入引脚都高电平时,输出引脚才会输出高电平,否则输出引脚为低电平。
通过连接多个逻辑门,我们可以实现从一个电平到另一个电平的转换。
电平转换芯片在电子设备中的应用非常广泛。
它可以用来实现逻辑电路之间的连接,例如将低电平的输入信号转换为高电平信号,以便与高电平的逻辑电路进行通信。
另外,电平转换芯片还可以用于信号放大、滤波和传输等应用。
在实际应用中,电平转换芯片需要注意以下几个问题。
首先是电平转换的速度问题,即转换所需的时间。
电平转换芯片需要在一段时间内完成电平转换,因此需要保证转换速度足够快,以满足实时性的要求。
其次,电平转换芯片还需要考虑功耗和稳定性等问题,以确保其正常可靠地工作。
总之,电平转换芯片是一种重要的电子元器件,用于实现不同
电平之间的转换。
它广泛应用于电子设备中,可以用于逻辑电路的连接和通信,以及信号的放大、滤波和传输等应用。
在实际应用中需要注意转换速度、功耗和稳定性等问题,以保证电平转换芯片的正常工作。
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FEATURESDCT OR DCU PACKAGE(TOP VIEW)1B1827V CCB 36OE 45B2GND V CCA A2A1YZP PACKAGE (BOTTOM VIEW)A254A136OE V CCA 27V CCBGND8B11B2A1B1C1D1A2B2C2D2DESCRIPTION/ORDERINGINFORMATIONTXS0102 SCES640A–JANUARY 2007–REVISED MAY 20082-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS•No Direction-Control Signal Needed •ESD Protection Exceeds JESD 22•Max Data Rates–A Port–24Mbps (Push Pull)–2500-V Human-Body Model (A114-B)–2Mbps (Open Drain)–250-V Machine Model (A115-A)•Available in the Texas Instruments NanoFree™–1500-V Charged-Device Model (C101)Package–B Port• 1.65V to 3.6V on A port and 2.3V to 5.5V on –8-kV Human-Body Model (A114-B)B port (V CCA ≤V CCB )–250-V Machine Model (A115-A)•V CC Isolation Feature –If Either V CC Input Is at –1500-V Charged-Device Model (C101)GND,Both Ports Are in the High-Impedance State•No Power-Supply Sequencing Required –Either V CCA or V CCB Can Be Ramped First •I off Supports Partial-Power-Down Mode Operation•Latch-Up Performance Exceeds 100mA Per JESD 78,Class IIThis two-bit noninverting translator uses two separate configurable power-supply rails.The A port is designed to track V CCA .V CCA accepts any supply voltage from 1.65V to 3.6V.The B port is designed to track V CCB .V CCA must be less than or equal to V CCB .V CCB accepts any supply voltage from 2.3V to 5.5V.This allows for low-voltage bidirectional translation between any of the 1.8-V,2.5-V,3.3-V,and 5-V voltage nodes.When the output-enable (OE)input is low,all outputs are placed in the high-impedance state.To ensure the high-impedance state during power up or power down,OE should be tied to GND through a pulldown resistor;the minimum value of the resistor is determined by the current-sourcing capability of the driver.ORDERING INFORMATIONT APACKAGE (1)(2)ORDERABLE PART NUMBER TOP-SIDE MARKING (3)NanoStar™–WCSP (DSBGA)Reel of 3000TXS0102YZPR 2H_0.23-mm Large Bump –YZPReel of 3000TXS0102DCTR NFEZ___–40°C to 85°CSSOP –DCT Tube of 250TXS0102DCTT NFEZ ___VSSOP –DCUReel of 3000TXS0102DCURNFE_(1)Package drawings,thermal data,and symbolization are available at /packaging .(2)For the most current package and ordering information,see the Package Option Addendum at the end of this document,or see the TI website at .(3)DCT:The actual top-side marking has three additional characters that designate the year,month,and assembly/test site.DCU:The actual top-side marking has one additional character that designates the assembly/test site.YZP:The actual top-side marking has three preceding characters to denote year,month,and sequence code,and one following character to designate the assembly/test site.Pin 1identifier indicates solder-bump composition (1=SnPb,•=Pb-free).Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.NanoFree is a trademark of Texas Instruments.PRODUCTION DATA information is current as of publication date.Copyright ©2007–2008,Texas Instruments IncorporatedProducts conform to specifications per the terms of the Texas Instruments standard warranty.Production processing does not necessarily include testing of all parameters.3.3 V1.8 VTXS0102SCES640A–JANUARY2007–REVISED PIN DESCRIPTION(DCT AND DCU PACKAGES) FUNCTION1B2Input/output B.Referenced to V CCB.2GND Ground3V CCA A-port supply voltage.1.65V≤V CCA≤3.6V and V CCA≤V CCB4A2Input/output A.Referenced to V CCA.5A1Input/output A.Referenced to V CCA.3-state output mode enable.Pull OE low to place all outputs in3-state mode.6OEReferenced to V CCA.7V CCB B-port supply voltage.2.3V≤V CCB≤5.5V8B1Input/output B.Referenced to V CCB.TYPICAL OPERATING CIRCUIT2Submit Documentation Feedback Copyright©2007–2008,Texas Instruments IncorporatedProduct Folder Link(s):TXS0102ABSOLUTE MAXIMUM RATINGS (1)RECOMMENDED OPERATING CONDITIONS (1)(2)TXS0102 SCES640A–JANUARY 2007–REVISED MAY 2008over recommended operating free-air temperature range (unless otherwise noted)MINMAX UNIT V CCA Supply voltage range –0.5 4.6V V CCB Supply voltage range –0.5 6.5V A port –0.5 4.6V I Input voltage range (2)V B port –0.5 6.5A port –0.5 4.6Voltage range applied to any outputV O V in the high-impedance or power-off state (2)B port –0.5 6.5A port –0.5V CCA +0.5V O Voltage range applied to any output in the high or low state (2)(3)VB port –0.5V CCB +0.5I IK Input clamp current V I <0–50mA I OK Output clamp current V O <0–50mA I OContinuous output current±50mA Continuous current through V CCA ,V CCB ,or GND±100mADCT package220θJA Package thermal impedance (4)DCU package 227°C/W YZP package102T stg Storage temperature range–65150°C (1)Stresses beyond those listed under "absolute maximum ratings"may cause permanent damage to the device.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions"is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2)The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.(3)The value of V CCA and V CCB are provided in the recommended operating conditions table.(4)The package thermal impedance is calculated in accordance with JESD 51-7.V CCAV CCBMIN MAX UNIT V CCA 1.65 3.6Supply Vvoltage (3)V CCB2.35.51.65V to 1.95V V CCI –0.2V CCI A-port I/Os2.3V to 5.5V 2.3V to3.6V V CCI –0.4V CCI High-level V IHV input voltageB-port I/Os V CCI –0.4V CCI 1.65V to 3.6V2.3V to 5.5VOE input V CCA ×0.655.5A-port I/Os00.15Low-level V ILB-port I/Os 1.65V to 3.6V2.3V to 5.5V00.15V input voltageOE inputV CCA ×0.35A-port I/Os,push-pull driving10Input transitionΔt/Δv B-port I/Os,push-pull driving1.65V to 3.6V2.3V to 5.5V10ns/V rise or fall rateControl input 10T A Operating free-air temperature–4085°C (1)V CCI is the supply voltage associated with the input port.(2)V CCO is the supply voltage associated with the output port.(3)V CCA must be less than or equal to V CCB ,and V CCA must not exceed 3.6V.Copyright ©2007–2008,Texas Instruments Incorporated Submit Documentation Feedback3Product Folder Link(s):TXS0102ELECTRICAL CHARACTERISTICS (1)(2)(3)TXS0102SCES640A–JANUARY 2007–REVISED MAY over recommended operating free-air temperature range (unless otherwise noted)T A =25°C –40°C to 85°CTEST PARAMETER V CCA V CCB UNIT CONDITIONS MINTYP MAXMIN MAXI OH =–20µA,V OHA 1.65V to 3.6V 2.3V to 5.5V V CCA ×0.67V V IB ≥V CCB –0.4V I OL =1mA,V OLA 1.65V to 3.6V 2.3V to 5.5V 0.4V V IB ≤0.15V I OH =–20µA,V OHB 1.65V to 3.6V 2.3V to 5.5V V CCB ×0.67V V IA ≥V CCA –0.2V I OL =1mA,V OLB 1.65V to 3.6V 2.3V to 5.5V 0.4V V IA ≤0.15VI I OE 1.65V to 3.6V2.3V to 5.5V ±1±2µA A port 0V 0to 5.5V ±1±2µA I off B port 0to3.6V 0V ±1±2µA I OZ A or B port1.65V to 3.6V2.3V to 5.5V ±1±2µA1.65V to V CCB2.3V to 5.5V2.4V I =V O =open,I CCA3.6V 0V 2.2µAI O =00V 5.5V –11.65V to V CCB2.3V to 5.5V12V I =V O =open,I CCB3.6V 0V –1µA I O =00V 5.5V 1V I =V CCI or GND,I CCA +I CCB 1.65V to V CCB2.3V to 5.5V14.4µA I O =0C I OE 3.3V 3.3V 2.5 3.5pF A or B port 3.3V3.3V10C ioA port 56pFB port67.5(1)V CCI is the V CC associated with the input port.(2)V CCO is the V CC associated with the output port.(3)V CCA must be less than or equal to V CCB ,and V CCA must not exceed 3.6V.4Submit Documentation FeedbackCopyright ©2007–2008,Texas Instruments IncorporatedProduct Folder Link(s):TXS0102TIMING REQUIREMENTS TIMING REQUIREMENTS TIMING REQUIREMENTS TXS0102 SCES640A–JANUARY2007–REVISED MAY2008over recommended operating free-air temperature range,V CCA=1.8V±0.15V(unless otherwise noted)V CCB=2.5V V CC=3.3V V CC=5V±0.2V±0.3V±0.5V UNITMIN MAX MIN MAX MIN MAXPush-pull driving212224 Data rate Mbp Open-drain driving222t w Push-pull driving474541 PulseData inputs ns duration Open-drain driving500500500over recommended operating free-air temperature range,V CCA=2.5V±0.2V(unless otherwise noted)V CCB=2.5V V CC=3.3V V CC=5V±0.2V±0.3V±0.5V UNITMIN MAX MIN MAX MIN MAXPush-pull driving202224 Data rate Mbp Open-drain driving222t w Push-pull driving504541 PulseData inputs ns duration Open-drain driving500500500over recommended operating free-air temperature range,V CCA=3.3V±0.3V(unless otherwise noted)V CC=3.3V V CC=5V±0.3V±0.5V UNITMIN MAX MIN MAXPush-pull driving2324 Data rate Mbps Open-drain driving22t w Push-pull driving4341 Pulse duration Data inputs ns Open-drain driving500500Copyright©2007–2008,Texas Instruments Incorporated Submit Documentation Feedback5Product Folder Link(s):TXS0102SWITCHING CHARACTERISTICSTXS0102SCES640A–JANUARY 2007–REVISED MAY over recommended operating free-air temperature range,V CCA =1.8V ±0.15V (unless otherwise noted)V CCB =2.5V V CCB =3.3V CCB =5V ±0.2V V FROM TO TEST ±0.5V PARAMETERUNIT±0.3V (INPUT)(OUTPUT)CONDITIONSMIN MAXMIN MAXMIN MAXPush-pull driving5.3 5.46.8t PHLOpen-drain driving 2.38.8 2.49.6 2.610ABns Push-pull driving 6.87.17.5t PLH Open-drain driving 452603*********Push-pull driving 4.4 4.5 4.7t PHLOpen-drain driving 1.9 5.3 1.1 4.4 1.24BA ns Push-pull driving 5.3 4.50.5t PLH Open-drain driving451753614027102t en OE A or B 200200200ns t dis OEA or B504035ns Push-pull driving 3.29.5 2.39.327.6t rA A-port rise time ns Open-drain driving 38165301322295Push-pull driving 410.8 2.79.1 2.77.6t rB B-port rise time ns Open-drain driving 34145231061058Push-pull driving 2 5.9 1.96 1.713.3t fA A-port fall time Open-drain driving 4.4 6.9 4.3 6.4 4.2 6.1ns Push-pull driving 2.913.8 2.816.2 2.816.2t fB B-port fall time Open-drain driving 6.913.87.516.2716.2t SK(O)Channel-to-channel skew0.70.70.7ns Push-pull driving 212224Max data rateMbps Open-drain driving2226Submit Documentation FeedbackCopyright ©2007–2008,Texas Instruments IncorporatedProduct Folder Link(s):TXS0102SWITCHING CHARACTERISTICS TXS0102 SCES640A–JANUARY2007–REVISED MAY2008over recommended operating free-air temperature range,V CCA=2.5V±0.2V(unless otherwise noted)V CCB=2.5V CCB=3.3V V CCB=5VVFROM TO TEST±0.3V±0.5V PARAMETER UNIT±0.2V(INPUT)(OUTPUT)CONDITIONSMIN MAX MIN MAX MIN MAXPush-pull driving 3.2 3.7 3.8 t PHLOpen-drain driving 1.7 6.326 2.1 5.8A B nsPush-pull driving 3.5 4.1 4.4 t PLHOpen-drain driving432503*********Push-pull driving3 3.6 4.3 t PHLOpen-drain driving 1.8 4.7 2.6 4.2 1.24B A nsPush-pull driving 2.5 1.61 t PLHOpen-drain driving441703714027103 t en OE A or B200200200ns t dis OE A or B504035nsPush-pull driving 2.87.4 2.6 6.6 1.8 5.6 t rA A-port rise time nsOpen-drain driving34149281212489Push-pull driving 3.28.3 2.97.2 2.4 6.1 t rB B-port rise time nsOpen-drain driving35151241121264Push-pull driving 1.9 5.7 1.9 5.5 1.8 5.3 t fA A-port fall time nsOpen-drain driving 4.4 6.9 4.3 6.2 4.2 5.8Push-pull driving 2.27.8 2.4 6.7 2.6 6.6 t fB B-port fall time nsOpen-drain driving 5.18.8 5.49.4 5.410.4 t SK(O)Channel-to-channel skew0.70.70.7nsPush-pull driving202224Max data rate MbpsOpen-drain driving222Copyright©2007–2008,Texas Instruments Incorporated Submit Documentation Feedback7Product Folder Link(s):TXS0102SWITCHING CHARACTERISTICSTXS0102SCES640A–JANUARY 2007–REVISED MAY over recommended operating free-air temperature range,V CCA =3.3V ±0.3V (unless otherwise noted)V CCB =3.3V V CCB =5V FROM TO TEST ±0.3V ±0.5V PARAMETERUNIT(INPUT)(OUTPUT)CONDITIONSMINMAX MIN MAXPush-pull driving2.43.1t PHLOpen-drain driving 1.3 4.2 1.4 4.6ABns Push-pull driving 4.2 4.4t PLH Open-drain driving 3620428165Push-pull driving 2.5 3.3t PHLOpen-drain driving 1124197BA ns Push-pull driving 2.5 2.6t PLH Open-drain driving31393105t en OE A or B 200200ns t dis OEA or B4035ns Push-pull driving 2.3 5.6 1.9 4.8t rA A-port rise time ns Open-drain driving 251161985Push-pull driving 2.5 6.4 2.17.4t rB B-port rise time ns Open-drain driving 261161472Push-pull driving 2 5.4 1.95t fA A-port fall time ns Open-drain driving 4.3 6.1 4.2 5.7Push-pull driving 2.37.4 2.47.6t fB B-port fall time ns Open-drain driving57.6 4.88.3t SK(O)Channel-to-channel skew0.70.7ns Push-pull driving 2324Max data rateMbps Open-drain driving228Submit Documentation FeedbackCopyright ©2007–2008,Texas Instruments IncorporatedProduct Folder Link(s):TXS0102PRINCIPLES OF OPERATIONApplicationsArchitectureV CCA V CCBInput Driver RequirementsPower UpEnable and DisableTXS0102 SCES640A–JANUARY 2007–REVISED MAY 2008The TXS0102can be used in level-translation applications for interfacing devices or systems operating at different interface voltages with one another.The TXS0102is ideal for use in applications where an open-drain driver is connected to the data I/Os.The TXS0102can also be used in applications where a push-pull driver is connected to the data I/Os,but the TXB0102might be a better option for such push-pull applications.The TXS0102architecture (see Figure 1)does not require a direction-control signal to control the direction of data flow from A to B or from B to A.Figure 1.Architecture of a TXS01xx CellEach A-port I/O has an internal 10-k Ωpullup resistor to V CCA ,and each B-port I/O has an internal 10-k Ωpullup resistor to V CCB .The output one-shots detect rising edges on the A or B ports.During a rising edge,the one-shot turns on the PMOS transistors (T1,T2)for a short duration,which speeds up the low-to-high transition.The fall time (t fA ,t fB )of a signal depends on the output impedance of the external device driving the data I/Os of the TXS0102.Similarly,the t PHL and max data rates also depend on the output impedance of the external driver.The values for t fA ,t fB ,t PHL ,and maximum data rates in the data sheet assume that the output impedance of the external driver is less than 50Ω.During operation,ensure that V CCA ≤V CCB at all times.During power-up sequencing,V CCA ≥V CCB does not damage the device,so any power supply can be ramped up first.The TXS0102has an OE input that is used to disable the device by setting OE low,which places all I/Os in the Hi-Z state.The disable time (t dis )indicates the delay between the time when OE goes low and when the outputs actually get disabled (Hi-Z).The enable time (t en )indicates the amount of time the user must allow for the one-shot circuitry to become operational after OE is taken high.Copyright ©2007–2008,Texas Instruments Incorporated Submit Documentation Feedback9Product Folder Link(s):TXS0102TXS0102SCES640A–JANUARY2007–REVISED Pullup or Pulldown Resistors on I/O LinesEach A-port I/O has an internal10-kΩpullup resistor to V CCA,and each B-port I/O has an internal10-kΩpullup resistor to V CCB.If a smaller value of pullup resistor is required,an external resistor must be added from the I/O to V CCA or V CCB(in parallel with the internal10-kΩresistors).10Submit Documentation Feedback Copyright©2007–2008,Texas Instruments IncorporatedProduct Folder Link(s):TXS0102PARAMETER MEASUREMENT INFORMATIONV OH V OLOutput Control (low-level enabling)Output Waveform 1S1 at 2 × V CCO (see Note B)Output Waveform 2S1 at GND (see Note B)0 V0 V V CCI0 VV CCA V CCO VOLTAGE WAVEFORMSPROPAGATION DELAY TIMES VOLTAGE WAVEFORMSPULSE DURATION VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMESInput A.C L includes probe and jig capacitance.B.Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.C.All input pulses are supplied by generators having the following characteristics: PRR v 10 MHz, Z O = 50 Ω, dv/dt ≥ 1 V/ns.D.The outputs are measured one at a time, with one transition per measurement.E.t PLZ and t PHZ are the same as t dis .F.t PZL and t PZH are the same as t en .G.t PLH and t PHL are the same as t pd .H.V CCI is the V CC associated with the input port.I.V CCO is the V CC associated with the output port.J.All parameters and waveforms are not applicable to all devices.W DATA RATE, PULSE DURATION, PROPAGATION DELAY ,OUTPUT RISE AND FALL TIME MEASUREMENT USINGA PUSH-PULL DRIVER W DATA RATE, PULSE DURATION, PROPAGATION DELAY ,OUTPUT RISE AND FALL TIME MEASUREMENT USING AN OPEN-DRAIN DRIVERTXS0102 SCES640A–JANUARY 2007–REVISED MAY 2008Figure 2.Load Circuit and Voltage WaveformsPACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)TXS0102DCTR ACTIVE SM8DCT83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCTRE4ACTIVE SM8DCT83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCTT ACTIVE SM8DCT8250Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCTTE4ACTIVE SM8DCT8250Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCTTG4ACTIVE SM8DCT8250Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCUR ACTIVE US8DCU83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCURG4ACTIVE US8DCU83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCUT ACTIVE US8DCU8250Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102DCUTG4ACTIVE US8DCU8250Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTXS0102YZPR ACTIVE DSBGA YZP83000Green(RoHS&no Sb/Br)SNAGCU Level-1-260C-UNLIMTXS0102YZTR ACTIVE DSBGA YZT83000Green(RoHS&no Sb/Br)SNAGCU Level-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TIto Customer on an annual basis.TAPE AND REEL INFORMATION*All dimensions are nominal Device Package Type Package DrawingPinsSPQ Reel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant TXS0102DCUR US8DCU 83000180.09.2 2.25 3.35 1.05 4.08.0Q3TXS0102YZPR DSBGAYZP 83000180.08.4 1.1 2.10.56 4.08.0Q1TXS0102YZTR DSBGA YZT 83000180.08.4 1.02 2.020.754.08.0Q1*All dimensions are nominalDevice Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) TXS0102DCUR US8DCU83000202.0201.028.0 TXS0102YZPR DSBGA YZP83000220.0220.034.0 TXS0102YZTR DSBGA YZT83000220.0220.034.0MECHANICAL DATAMPDS049B – MAY 1999 – REVISED OCTOBER 2002DCT (R-PDSO-G8)PLASTIC SMALL-OUTLINE PACKAGE 0,600,200,250°– 8°0,15 NOMGage Plane4188781/C 09/024,2550,300,152,903,752,70843,152,7510,100,001,30 MAX Seating Plane0,10M 0,130,65PIN 1INDEX AREANOTES: A.All linear dimensions are in millimeters.B.This drawing is subject to change without notice.C.Body dimensions do not include mold flash or protrusion D.Falls within JEDEC MO-187 variation DA.IMPORTANT NOTICETexas Instruments Incorporated and its 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