贴片肖特基二极管 BAS70 SOT-23 规格书推荐

FHBAS70(SOT-23)肖特基二极管规格书

ቆᄂ૥औ૵਌Schottky DiodeSchottky Diode ቆᄂ૥औ૵਌FHBAS701DESCRIPTION & FEATURES 概述及特點 SOT-23Low forward voltage 低正向壓降High breakdown voltage 高反向擊穿電壓 Ultra high-speed switching 超高速開關應用 Protection circuits 保護電路應用PIN ASSIGNMENT 引腳說明 PIN NUMBER 引腳序號PIN NAME 管腳符號 SOT-23 FUNCTION 功能 A 1 AnodeNC 2 － C 3 CathodeMAXIMUM RATINGS(T a =25℃) 最大額定值CHARACTERISTIC 特性參數 Symbol 符號Rating 額定值 Unit 單位 Reverse Voltage 反向電壓 V R 70 Vdc Peak Forward Current 正向峰值電流 I F 70 mAdcPeak Forward Surge Current 正向最大浪湧電流t ≤1s I FM(surge) 100 mAdcTHERMAL CHARACTERISTICS 熱特性CHARACTERISTIC 特性參數 Symbol 符號Max 最大值 Unit 單位Total Device Dissipation FR-5 Board(1) T A =25℃ P D 225 mW Total Device Dissipation Alumina Substrate,(2) T A =25℃總耗散功率氧化鋁襯底P D 300 mWJunction and Storage Temperature 結溫和儲存溫度T J ,T stg 150， -55 ~150℃ 1. FR-5=1.0×0.75×0.062in,printed-circuit board. 2. Alumina=0.4×0.3×0.024in,99.5%aluminaDEVICE MARKING 打標 FHBAS70=K1ELECTRICAL CHARACTERISTICS 電特性(T A =25℃ unless otherwise noted 如無特殊說明，溫度為25℃)Characteristic 特性參數Symbol 符號 Test Condition測試條件Min 最小值Type 典型值 Max 最大值Unit 單位Reverse Voltage Leakage Current反向漏電流I R V R =50Vdc— — 0.1 µA Reverse Breakdown Voltage反向擊穿電壓V (BR)I BR =10μAdc 70 — — Vdc I F =1mAdc— — 410 I F =10mAdc— — 750 Forward Voltage 正向電壓 V F I F =15mAdc— — 1000 mV Total Capacitance 電容 C TV R =0V,f=1.0MHz ——2.0pF。

风华FHD70(SOT-23)贴片式开关二极管规格书

ఎਈऔ૵਌!Switching DiodeSwitching Diode ఎਈऔ૵਌FHD701DESCRIPTION & FEATURES 概述及特點 SOT-23Low forward voltage 低正向壓降Fast reverse recovery time 快恢復時間Ultra High Speed Switching Application 超高速開關應用PIN ASSIGNMENT 引腳說明PIN NUMBER 引腳序號PIN NAME 管腳符號 SOT-23 FUNCTION 功能 A 1 Anode A 2 AnodeC 3 Cathode MAXIMUM RATINGS(T a =25℃) 最大額定值CHARACTERISTIC 特性參數 Symbol 符號 Rating 額定值 Unit 單位 Continuous Reverse Voltage 連續反向電壓 V R 70 Vdc Peak Forward Current 正向峰值電流 I F 200 mAdcPeak Forward Surge Current 正向最大浪湧電流I FM(surge) 500 mAdcTHERMAL CHARACTERISTICS 熱特性CHARACTERISTIC 特性參數 Symbol 符號Max 最大值 Unit 單位Total Device Dissipation FR-5 Board(1) T A =25℃ PD 225 mW Total Device Dissipation Alumina Substrate,(2) T A =25℃總耗散功率氧化鋁襯底P D 300 mWJunction and Storage Temperature 結溫和儲存溫度T J ,T stg 150， -55 ~150℃ 1. FR-5=1.0×0.75×0.062in, printed-circuit board.2. Alumina=0.4×0.3×0.024in, 99.5%alumina DEVICE MARKING 打標 FHD70=A4ELECTRICAL CHARACTERISTICS 電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度為25℃)Characteristic 特性參數Symbol 符號 Test Condition測試條件Min 最小值Type 典型值 Max 最大值Unit 單位V R =70Vdc — — 2.5 V R =70Vdc,T j =150℃ — — 100 Reverse Voltage LeakageCurrent 反向漏電流 I R V R =25Vdc,T j =150℃— — 60 µA Reverse Breakdown Voltage反向擊穿電壓V (BR)I BR =100μAdc 70 — — VdcI F =1mAdc — — 715 I F =10mAdc— — 855 I F =50mAdc — — 1000 Forward Voltage 正向電壓 V FI F =150mAdc— — 1250 mV Diode Capacitance 電容 C D V R =0,f=1.0MHz— — 1.5pFReverse Recovery Time反向恢復時間 t rrI F =I R =10mAdc, R L =100Ω——6.0 nS风华直接授权代理／片式无源器件整合供应商　【南京南山】。

肖特基二极管常用参数大全

肖特基二极管常用参数大全肖特基二极管常用参数大全肖特基二极管常用参数大全型号制造商封装If/A Vrrm/V最大Vf/V1SS294 TOS SC-59 0.1 400.60BAT15-099 INF SOT143 0.11 4 0.32BAT54A PS SOT23 0.20 300.5010MQ060N IR SMA 0.77 900.6510MQ100N IR SMA 0.77 1000.9610BQ015 IR SMB 1.00 150.34SS12 GS DO214 1.00 20 0.50MBRS130LT3 ON - 1.00 300.3910BQ040 IR SMB 1.00 400.53RB060L-40 ROHM PMDS 1.00 400.55RB160L-40 ROHM PMDS 1.00 400.55SS14 GS DO214 1.00 40 0.50MBRS140T3 ON - 1.00 400.6010BQ060 IR SMB 1.00 600.57SS16 GS DO214 1.00 60 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.70 40 0.55PBYR245CT PS SOT223 2.00 45 0.4530BQ015 IR SMC 3.00 15 0.3530BQ040 IR SMC 3.00 40 0.5130BQ060 IR SMC 3.00 60 0.5830BQ100 IR SMC 3.00 100 0.79STPS340U STM SOD6 3.00 400.84MBRS340T3 ON - 3.00 40 0.52RB051L-40 ROHM PMDS 3.00 40 0.45MBRS360T3 ON - 3.00 60 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 600.586CWQ10FN IR DPAK pr 6.60 1000.811N5817 ON 轴向 1.00 20 0.75 1N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.50 1N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 501.00MBR160 ON 轴向 1.00 601.0011DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.55 11DQ05 IR 轴向 1.10 50 0.58 11DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.00 400.431N5820 ON 轴向 3.00 20 0.85 1N5821 ON 轴向 3.00 30 0.38 1N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 601.00SS32 GS DO214 3.00 20 3.00 SS34 GS DO214 3.00 40 0.50 31DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57 SB540 GS DO201 5.00 40 0.57 50SQ080 IR 轴向 5.00 80 0.66 50SQ100 IR 轴向 5.00 100 0.66 MBR735 GS TO220 7.50 350.84MBR745 GS TO220 7.50 450.84MBR745 IR TO220 7.50 450.8480SQ040 IR 轴向8.00 40 0.53 STQ080 IR TO220 8.00 80 0.72 8TQ100 TO220 8.00 100 0.72 80SQ040 IR 轴向8.00 40 0.5380SQ035 IR DO204AR 8.00 350.53HFA16PA60C IR TO247CT 8.00 6001.7095SQ015 轴向9.00 15 0.3190SQ040 轴向9.00 40 0.48 10TQ045 TO220 10.00 45 0.57 MBR1035 GS TO220 10.00 350.84MBR1045 ON TO220 10.00 450.84STPS1045F ON ISO220 10.00 45 0.64MBR2060CT ON TO220 10.00 600.85 <P style="TEXT-INDE。

贴片肖特基二极管BAT54CSOT-23规格书推荐

MAXIMUM RATINGS ( T a =25℃ unless otherwise noted ) Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 30
贴片肖特基二极管 bat54c sot-23规格书推荐 jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate diodes bat54/a/c/s schottky barrier diode features z extremely fast switching speed maximum ratings ( t a =25℃ unless otherwise noted ) parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v forward continuous current i fm 200 ma non-repetitive peak forward surge current @ t =8.3ms i fsm 600 ma repetitive peak forward current @ t≤1s,δ≤0.5 i frm 300 ma power dissipation p d 200 mw thermal resistance from junction to ambient rΘja 500℃/w junction temperature t j 125℃ storage temperature t stg -55~+150 ℃ electrical characteristics(t a =25℃ unless otherwise specified) parameter symbol min typ max unit test conditions reverse voltage v (br) 30 v i r =100μa forward voltage v f 0.24 v i f1=0.1ma 0.32 v i f2=1ma 0.40 v i f3=10ma 0.50 v i f4=30ma 1 v i f5=100ma reverse current i r 2 μa v r =25v diode capacitance c d 1

BAS70L中文资料

BAS70L
This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).
PACKAGE OUTLINE Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm

DIODES美台Schottky二极管BAS70选型手册

BAS70/ -04/ -05/ -06
Document number: DS11007 Rev. 24 - 2
2 of 5
August 2014
© Diodes Incorporated
PD, POWER DISSIPATION (mW)
250
Note 6
Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect.
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Maximum Forward Continuous Current (Note 6) Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s
BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
• Low Turn-On Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

BAS70-中文资料

≤ 335 ≤ 435
1) For detailed information see chapter Package Outlines. 2) Max. 450 mW per package. 3) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
TS ≤ 66 ˚C2)
BAS 70-04 … TS ≤ 40 ˚C2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction - ambient3) BAS 70 BAS 70-04 …
元器件交易网
Silicon Schottky Diodes
q General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing
Differential forward resistance rf = f (IF) f= 10 kHz
Semiconductor Group
4
元器件交易网
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Available with CECC quality assessment
BAS 70 …
ESD: Electrostatic discharge sensitive device, observe handling precautions!

FOSAN富信电子二级管 BAS70-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70/-04/-05/-06SOT-23Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAS70BAS70-04BAS70-05BAS70-06Pin 管脚Mark 打标73747576▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 70V Reverse Work Voltage 反向工作电压V RWMDC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )70mA Peak Forward Current 正向峰值电流I FM100mA Power dissipation 耗散功率P D (Ta=25℃)200mW Thermal Resistance J-A 结到环境热阻R θJA 625℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =10µA)V (BR)70—V Reverse Leakage Current 反向漏电流(V R =50V)I R —100nA Forward V oltage(I F =1mA)正向电压(I F =10mA)(I F =15mA)V F —0.410.751V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C T—2pF Reverse Recovery Time 反向恢复时间T rr—5nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70/-04/-05/-06■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70/-04/-05/-06■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

BAS70J中文资料

Base qty 3000 3000 3000 3000 3000
Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

SOT-23型号的塑封稳压二极管说明书

功率消耗 Power Dissipation
Pd
300
mW
正向压降 Forward Voltage @IF=10mA
Vf
0.9
V
存储温度 Storage tempera43;150
℃
Thermal resistance junction to ambient air Warmewider stand Sperrschicht –umgebende Luft
RthA
417
K/W
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
BZX84Cxx Series
Breakdown characteristics
at Tj=constant (pulsed)
SOT-23
BZX84Cxx Series
SOT-23 贴片塑封稳压二极管 SOT-23 Plastic-Encapsulate Zener Diode
特征 Features 齐纳击穿阻抗低; Low Zener Impedance 最大功率耗散 300mW; Power Dissipation of 300mW 高稳定性和可靠性。High Stability and High Reliability 机械数据 Mechanical Data 封装: SOT-23 封装 SOT-23 Small Outline Plastic Package 极性: 色环端为负极 Polarity: Color band denotes cathode end 环氧树脂 UL 易燃等级 Epoxy UL: 94V-0 安装位置: 任意 Mounting Position: Any