-晶体硅太阳能电池的缺陷检测及分析
晶体硅光伏组件EL测试的缺陷分析
晶体硅光伏组件EL测试的缺陷分析随着光伏技术的发展，晶体硅光伏组件已成为主流的光伏发电设备之一、在光伏组件生产过程中，常常会进行电致发光（EL）测试，通过对组件的EL图像进行分析，可以有效地检测出组件的缺陷。
本文将结合实际情况，介绍晶体硅光伏组件EL测试的缺陷分析。
首先，晶体硅光伏组件EL测试是一种非破坏性测试方法，通过在组件背面施加电压，使组件辐射出可见光，然后使用相机拍摄组件的照片。
通过分析照片中出现的亮点、暗点等特征，可以判断出组件是否存在缺陷。
在EL测试中，常见的缺陷包括细小裂纹、污染、气泡、焊点问题等。
细小裂纹是由于光伏组件在生产过程中产生的温度应力和机械应力引起的。
在EL图像中，细小裂纹会呈现为条状或弧状的亮线，通常与电池片之间的连接有关。
污染是指组件表面存在的杂质，如灰尘、油渍等。
在EL图像中，污染会呈现为不规则的暗斑点，通常分布在整个组件表面。
气泡是由于生产工艺不当或材料质量问题导致的。
在EL图像中，气泡通常呈现为圆形或半圆形的亮斑点。
焊点问题主要包括焊接不良、焊点开路等。
在EL图像中，焊接不良的区域会显示为不规则形状的亮斑，而焊点开路则没有亮斑。
针对这些常见的缺陷，可以采取一些措施进行分析和修复。
对于细小裂纹，可以通过改善工艺和材料选择来减轻温度和机械应力，同时加强的胶水的粘合度。
对于污染问题，可以通过增加清洗步骤或改进清洗工艺来减少。
对于气泡问题，可以通过改进生产工艺和选择更好的材料来避免气泡形成。
对于焊接问题，可以通过调整焊接参数、提高焊接工艺的稳定性来改善。
需要注意的是，EL测试虽然能够有效地检测出组件的缺陷，但并不能判断缺陷对组件性能的具体影响。
因此，在EL测试结果出现异常时，需要进一步进行其他测试来评估组件的性能和质量。
总之，晶体硅光伏组件EL测试是一种重要的缺陷分析方法，通过对EL图像的分析，可以有效地检测出组件的缺陷，为组件生产和质量控制提供有力的支持。
通过对常见的缺陷进行分析和修复措施的探讨，可以进一步提高光伏组件的质量和性能。
太阳能电池用晶体硅标准现状分析
太阳能电池用晶体硅标准现状分析学术研讨王丽华韩舂蕾^张婷卜延青(连云港市质量技术综合检验检测中心）摘要：本文通过介绍太阳能电池用晶体硅现行各级标准整体现状，着重分析了现行太阳能电池用晶体硅产品标准及 检测方法标准中存在的问题，并提出改善建议，对了解行业质量状况及合理制修订标准具有指导意义关键词：太阳能电池，少数栽流子寿命，晶体完整性，晶体缺陷密度，标准DOI编码：1〇.3969/j.iss n.1002-5944.2022.11.009Analysis of Current Status of Standards for Crystalline Silicon Used inSolar CellsWANG Li-hua HAN Chun-lei* ZHANG Ting 巳U Yan-qing(Lianyungang Comprehensive Inspection and Testing Center of Quality and Technology) Abstract：In th is p a p er, th e c u rre n t sta tu s o f th e s ta n d a rd s fo r c ry s ta llin e silic o n u se d in so la r cells is in tro d u c e d, an d the e x is tin g p ro b lem s in th e se s ta n d a rd s a n d sta n d a rd s fo r te s tin g m e th o d s a re e m p h a tic a lly a n a ly z e d, an d su g g e stio n s for im p ro v e m e n t a re p u t fo rw a rd, w h ich c an help u n d e rsta n d th e q u a lity sta tu s o f th e in d u stry an d d ev elo p an d rev ise relev an t sta n d a rd s re a so n a b ly in th e fu tu re.Keywords：so la r c ells, m in o rity c a rrie r life tim e, c ry sta llo g ra p h ic p e rfe c tio n o f silic o n, c ry sta l d efect d en sity, sta n d a rd s1引言光伏发电系统是利用太阳能电池直接将太阳能 转换成电能的发电系统。
晶体硅光伏组件EL 测试的缺陷分析
，江苏省普通高校专业学位研究生实践创新计划项目(SJLX16_0212)，男，教授、博士、博士生导师，主要从事太阳能高效综合利用方面的研究。
bai_jianbo@图1 测试系统工作原理图暗室正向电流室温下的简易操作方法CCD 相机成像电致发光直流电源晶体硅电池2 实验2.1 实验方法本次实验采用水平对比的方法。
选取已在户外运行过的6块多晶硅光伏组件，且这些组件均来自同一厂家的同一批次，背板、封装材料及工艺等条件完全一样；所有组件在测试最大功率时都已依照IEC 61215的标准进行外观检测，无明显缺陷[3]。
实验过程及条件保持完全一致，都采Pasan 3A级瞬态太阳能模拟器记录组件在状态下的输出功率，然后再进行EL测试图3 测试桌面2.2.1 隐裂和碎片缺陷带来的影响从EL测试结果可以看出，2#组件中电池片a. 1#b. 2#c. 3#d. 4#e. 5#f. 6#图4 光伏组件的隐性缺陷图2 电子-空穴复合能带模型图光子，E=hv断栅缺陷带来的影响组件有断栅缺陷，其成像特点是两栅线之间出现竖直的纹路，而且断栅处往往发光强度较弱或不发光。
中4#与1#组件的性能参数可知，组件的功率比1#组件低12 W 数相差不大，但并联电阻差得较大，故推测是并联电阻导致的功率差异。
8 5#组件中缺陷电池片EL 7 4#组件中缺陷电池片EL 图9 3#组件进行PID 试验后EL 图像图10 4#组件进行PID 试验后EL 图像6 6#组件中缺陷电池片EL 5 2#组件中缺陷电池片EL 中5#与1#组件的性能参数可知，有黑片的组件与正常组件功率相差并联电阻相差也较大，因此推测是并联电阻造成产生原因分析：①组件焊接过程中造成的组件层压前混入低效电池片所造成；硅片材料质量差。
影响：组件功率和填充因子都会受到较大影响，黑片不对外提供功率，整块组件输出功率cn. All Rights Reserved.。
复杂背景下的多晶硅太阳电池缺陷检测
复杂背景下的多晶硅太阳电池缺陷检测目录一、内容概要 (2)二、多晶硅太阳电池概述 (3)1. 多晶硅太阳电池基本概念 (4)2. 多晶硅太阳电池发展历程 (4)3. 多晶硅太阳电池的应用现状 (6)三、复杂背景下的多晶硅太阳电池缺陷类型 (7)1. 生产工艺中的缺陷 (8)2. 使用过程中的老化问题 (9)3. 环境因素导致的缺陷 (10)四、多晶硅太阳电池缺陷检测技术与方法 (12)1. 视觉检测法 (13)2. 红外热成像技术 (15)3. 超声检测技术 (16)4. 电学性能检测法 (17)五、多晶硅太阳电池缺陷检测中的难点与挑战 (17)1. 背景复杂性的干扰 (19)2. 缺陷类型的多样性及变化性 (20)3. 检测技术的精确性与实时性要求 (21)六、多晶硅太阳电池缺陷检测技术的发展趋势与建议 (22)1. 技术发展方向 (24)2. 技术提升的建议与策略 (25)3. 未来发展趋势预测与展望 (27)七、案例分析与实践应用 (28)1. 成功案例介绍与分析 (29)2. 实践应用中的注意事项与经验分享 (30)八、结论与展望 (32)一、内容概要本论文深入探讨了在复杂背景下进行多晶硅太阳电池缺陷检测的方法与技术。
随着太阳能光伏产业的快速发展，多晶硅太阳电池因其较高的性价比和稳定性而广泛应用。
生产过程中的种种因素，如原材料缺陷、制造工艺波动、环境条件变化等，都可能导致电池片出现表面划痕、杂质浓度不均匀、位错密度增加等缺陷，进而影响其转换效率和长期稳定性。
针对这些挑战，本文提出了一种结合先进图像处理技术和机器学习算法的检测系统。
该系统首先通过光学显微镜和扫描电子显微镜获取多晶硅太阳电池的图像，然后利用图像处理算法对图像进行预处理，以提高缺陷的可见性和可辨识度。
采用深度学习模型对预处理后的图像进行分类和识别，以自动检测并定位缺陷的位置和类型。
实验结果表明，该系统能够有效地识别出多种类型的缺陷，如表面划痕、杂质斑点、位错线等，并且对于不同类型的缺陷具有较高的检测准确率和召回率。
晶体硅太阳电池缺陷分析
晶体硅太阳电池缺陷分析作者：姜明闫伟来源：《科技创新导报》 2015年第11期姜明闫伟(英利能源(中国)有限公司河北保定 071000)摘要：晶体硅太阳电池的出现，为人们生活提供了新的便利，但是这种电池在使用中也存在一定缺陷。
该文主要对晶体硅太阳电池缺陷进行分析，总结了晶体硅太阳电池的缺陷分类评价体系，从体系标准和缺陷类型的角度，列出常见的缺陷判定方法，然后对两种典型缺陷进行分析，主要有边缘漏电和裂纹，通过这种方式能够使相关人员更加快捷的掌握电池的具体情况，采取相应措施，确保晶体硅太阳电池的问题能够得到及时的修复，解决存在的隐患，让晶体硅太阳电池在使用中更加安全。
关键词：晶体硅太阳电池电池缺陷中图分类号：TM914.4文献标识码:A 文章编号：1674-098X(2015)04(b)-0216-01太阳能是世界的新型能源，晶体硅太阳电池技术在科技发展的推动下得到了迅猛的发展。
目前，在生产晶体硅太阳电池的生产中，因为制作情况和材料的原因，该电池会产生一定缺陷，下面针对晶体硅的太阳电池缺陷进行分析，并总结如下。
1 晶体硅太阳电池缺陷分类评价体系晶体硅太阳电池有很多缺陷，相关人员为了更好的分析这种缺陷和产生原因，应采取多种分析手段，并建立一个有效的检测体系和检测程序，总结缺陷分类评价体系，从而更好在生产厂商和科研机构推广。
1.1 体系标准首先要根据缺陷的名称和造成缺陷的原因为缺陷命名，相关人员要在测试中明确这种缺陷的主要表现，从而使使用该体系的人员能够更加快捷的确定这种缺陷的类型。
缺陷的形成机理与生产工艺过程有关，这些过程能为其提供合理的解释[1]。
相关人员要在缺陷的危险程度进行分析，并整合这种缺陷对电池性能以及其他方面的危害程度，在这种情况下，相关人员要也记录号缺陷出现的频率，其指标也要随着样本的增长而不断更新。
相关人员分析完晶体硅太阳电池存在的缺陷，要总结缺陷机理，提出规范合理的复返建议。
相关人员应根据缺陷的影响程度和面积大小，分析其是否具有一定回复力，然后对缺陷太阳电池的回收价值进行评估。
晶体硅电池组件EL缺陷汇总及分析报告课件
学习交流PPT
10
缺陷种类九：过焊片
电池片过焊一般是在焊接工序产生的，过焊会造成电 池部分电流的收集障碍，该缺陷发生在主栅线的旁边。 成像特点是在EL图像下，黑色阴影部分从主栅线边缘延 副栅线方向整齐延伸。栅线外侧区域，一般为全黑阴影。 栅线之间一种是全黑 阴影，一种是由深至 浅的过渡阴影。我们 通过计算黑色区域的 面积来判定缺陷的级 别。
学习交流PPT
2
缺陷种类一：黑心片
EL照片中黑心片是反映在通电情况下电池片中心一圈 呈现黑色区域，该部分没有发出1150nm的红外光，故 红外相片中反映出黑心，此类发光现象和硅衬底少数载 流子浓度有关。这种电池片中心部位的电阻率偏高。
学习交流PPT
3
缺陷种类二：黑团片
多晶电池片黑团主要是由于硅片供应商一再缩短晶体 定向凝固时间，熔体潜热释放与热场温度梯度失配导致 硅片内部位错缺陷。
学习交流PPT
24
其他原因
8.组件扒皮返修过程中人员用力按压电池片也极易造 成破片。 9.层叠工序5S较差时异物吸附到组件内经过层压机层 压产生破片。 10.层压件堆放在托盘上超过规定数量或是运输过程中 颠簸均有可能导致电池片隐裂纹。 11.摔组件更是导致隐裂纹的罪魁祸首
学习交流PPT
25
总结
对于我们组件制造环节来讲EL不良总体可以分为两 大类即来料原因和后期人为原因。虽然电池片的好坏 我们无法掌控，但是我们每个工序都可以做到及时发 现及时反馈，不让不良电池片流入下一道工序，同时 将不良电池片退回供应商以减少我们的损失。
晶体硅电池组件EL缺陷汇总及 原因分析报告
学习交流PPT
1
EL检测原理
EL检测仪，又称太阳能组件电致发光缺陷检测仪，是 跟据硅材料的电致发光原理对组件进行缺陷检测及生产 工艺监控的专用测试设备。给晶体硅电池组件正向通入 1-1.5倍Isc的电流后硅片会发出1000-1100nm的红外光， 测试仪下方的摄像头可以捕捉到这个波长的光并成像于 电脑上。因为通 电发的光与PN结中离 子浓度有很大的关系， 因此可以根据图像来 判断硅片内部的状况。
晶硅太阳能电池组件—背板材料 产品技术 原材料 测试方法及质量问题
Chemical treatment of crystalline silicon solar cells as a method of recovering pure silicon from photovoltaic modulesRenewable EnergyPhotovoltaic technology is used worldwide to provide reliable and cost-effective electricity for industrial, commercial, residential and community applications. The average lifetime of PV modules can be expected to be more than 25 years. The disposal of PV systems will become a problem in view of the continually increasing production of PV modules. These can be recycled for about the same cost as their disposal.Photovoltaic modules in crystalline silicon solar cells are made from the following elements, in order of mass: glass, aluminium frame, EVA copolymer transparent hermetising layer, photovoltaic cells, installation box, Tedlar® protective foil and assembly bolts. From an economic point of view, taking into account the price and supply level, pure silicon, which can be recycled from PV cells, is the most valuable construction material used.Recovering pure silicon from damaged or end-of-life PV modules can lead to economic and environmental benefits. Because of the high quality requirement for the recovered silicon, chemical processing is the most important stage of the recycling process. The chemical treatment conditions need to be precisely adjusted in order to achieve the required purity level of the recovered silicon. For PV systems based on crystalline silicon, a series of etching processes was carried out as follows: etching of electric connectors, anti-reflective coating and n-p junction. The chemistry of etching solutions was individually adjusted for the different silicon cell types. Efforts were made to formulate a universal composition for the etching solution. The principal task at this point was to optimise the etching temperature, time and alkali concentration in such a way that only as much silicon was removed as necessary.Engineering, institutions, and the public interest: Evaluating product quality in theKenyan solar photovoltaics industryEnergy PolicySolar sales in Kenya are among the highest per capita among developing countries. While this commercial success makes the Kenya market a global leader, product quality problems have been a persistent concern. In this paper, we report performance test results from 2004 to 2005 for five brands of amorphous silicon (a-Si) photovoltaic (PV) modules sold in the Kenya market. Three of the five brands performed well, but two performed well below their advertised levels. These results support previous work indicating that high-quality a-Si PV modules are a good economic value. The presence of the low performing brands, however, confirms a need for market institutions that ensure the quality of all products sold in the market. Prior work from 1999 indicated a similar quality pattern among brands. This confirms the persistent nature of the problem, and the need for vigilant, long-term approaches to quality assurance for solar markets in Kenya and elsewhere. Following the release of our 2004/2005 test results in Kenya, the Kenya Bureau of Standards moved to implement and enforce performance standards for both amorphous and crystalline silicon PV modules. This appears to represent a positive step towards the institutionalization of quality assurance for products in the Kenya solar market.Electrical performance results from physical stress testing of commercial PV modules to the IEC 61215 test sequenceSolar Energy Materials and Solar CellsThis paper presents statistical analysis of the behaviour of the electrical performance of commercial crystalline silicon photovoltaic (PV) modules tested in the Solar Test Installation of the European Commission's Joint Research Centre from 1990 up to 2006 to the IEC Standard 61215 and its direct predecessor CEC Specification 503. A strong correlation between different test results was not observed, indicating that the standard is a set of different, generally independent stress factors. The results confirm the appropriateness of the testing scheme to reveal different module design problems related rather to the production quality control than material weakness in commercial PV modules.Efficiency model for photovoltaic modules and demonstration of its application to energy yield estimationA new method has been proposed [W. Durisch, K.H. Lam, J. Close, Behaviour of a copper indium gallium diselenide module under real operating conditions, in: Proceedings of the World Renewable Energy Congress VII, Pergamon Press, Oxford, Elsevier, Amsterdam, 2002, ISBN 0-08-044079-7] for the calculation of the annual yield of photovoltaic (PV) modules at selected sites, using site-specific meteorological data. These yields are indispensable for calculating the expected cost of electricity generation for different modules, thus allowing the type of module to be selected with the highest yield-to-cost ratio for a specific installation site. The efficiency model developed and used for calculating the yields takes three independent variables into account: cell temperature, solar irradiance and relative air mass. Open parameters of the model for a selected module are obtained from current/voltage (I/V) characteristics, measured outdoors at Paul Scherrer Institute's test facility under real operating conditions.From the model, cell and module efficiencies can be calculated under all relevant operating conditions. Yield calculations were performed for five commercial modules (BP Solar BP 585 F, Kyocera LA361K54S, Uni-Solar UPM-US-30, Siemens CIS ST40 and Wuerth WS11003) for a sunny site in Jordan (Al Qawairah) for which reliable measured meteorological data are available. These represent mono-crystalline, poly-crystalline and amorphous silicon as well as with copper–indium-diselenide, CuInSe2 PV modules. The annual yield for these modules will be presented and discussed.Experimental validation of crystalline silicon solar cells recycling by thermal and chemical methodsIn recent years, photovoltaic power generation systems have been gaining unprecedented attention as an environmentally beneficial method for solving the energy problem. From the economic point of view pure silicon, which can be recovered from spent cells, is the most important material owing to its cost and limited supply.The article presents a chemical method for recycling spent or damaged modules and cells, and the results of its experimental validation.The recycling of PV cells consists of two main steps: the separation of cells and their refinement. Cells are first separated thermally or chemically; the separated cells are then refined. During this process the antireflection, metal coating and p–n junction layers are removed in order to recover the silicon base, ready for its next use. This refinement step was performed using an optimised chemical method. Silicon wafers were examined with an environmental scanning electron microscope (ESEM) coupled to an EDX spectrometer.The silicon wafers were used for producing new silicon solar cells, which were then examined and characterized with internal spectral response and current–voltage characteristics. The new cells, despite the fact that they have no SiN x antireflective coating, have a very good efficiency of 13–15%.The impact of silicon feedstock on the PV module costThe impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry partners are presented for a baseline manufacturing technology and for four advanced wafer silicon technologies which may be ready for industrial implementation in the near future. Iso-cost curves show the technologyparameter combinations that yield a constant total module cost for varying feedstock cost, silicon utilisation, and cell efficiency. A large variation of feedstock cost for different production processes, from near semiconductor grade Si (30 €/kg) to upgraded metallurgical grade Si (10€/kg), changes the cost of crystalline silicon modules by 11% for present module technologies or by 7% for advanced technologies, if the cell efficiency can be maintained. However, this cost advantage is completely lost if cell efficiency is reduced, due to quality degradation, by an absolute 1.7% for present module technology or by an absolute 1.3% for advanced technologies.Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substratesSolar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. One way to create crystalline-silicon thin films on non-silicon substrates is to use the so-called “seed layer approach”, in which a thin crystalline-silicon seed layer is first created, followed by epitaxial thickening of this seed layer.In this paper, we present the first solar cell results obtained on 10-μm-thick monocrystalline-silicon (mono-Si) layers obtained by a seed layer approach on transparent glass-ceramic substrates. The seed layers were made using implant-induced separation and anodic bonding. These layers were then epitaxially thickened by thermal CVD. Simple solar cell structures without integrated light trapping features showed efficiencies of up to 7.5%. Compared to polycrystalline-silicon layers made by aluminum-induced crystallization of amorphous silicon and thermal CVD, the mono-Si layers have a much higher bulk diffusion lifetime.Waved glass: Towards optimal light distribution on solar cell surfaces for high efficient modulesA method to improve the module efficiency of solar cells by modifying the surface of the glass cover of the solar cells module is proposed. A model is built to show that a better efficiency can be achieved by optimizing the light distribution on the cell, which reduces the shadow losses and thereby allows the finger spacing to be decreased, which in turn decreases the (resistive) ohmic losses.This method is illustrated by considering industrial crystalline silicon solar cells as an example, however, it applies to all solar cells that are characterized by a metallization pattern on the surface of the solar cell. It is estimated that this method can improve the relative module efficiency by about 5% and halve the front side losses.Analysis of series resistance of crystalline silicon solar cell with two-layer front metallization based on light-induced platingImproving the front metallization quality of silicon solar cells should be a key to enhance cell performance. In this work, we investigated a two-layer metallization scheme involving light-induced plating (LIP) and tried to quantify its impact on the series resistance of the front grid metals and FFs on finished cells. To estimate the effect of LIP processing on a printed and fired seed layer, individual components of series resistance were measured before and after LIP processing. Among them, grid resistance and contact resistance were closely observed because of their large contribution to series resistance. To optimize the plating on the seed metal grid, the grid resistance of the two-layer metal grid structure was calculated as a function of cross section area of the plated layer. Contact resistivity of the grid before and after LIP processing was analyzed to understand the contact resistance reduction, as well. As a result, the efficiency of solar cells with 80 μm seed metal grid width increased by 0.3% absolute compared with conventional solar cells of 120 μm metal grid width. The total area of electrodes in conventional cells was 1800 mm2 and electrodes area of LIP processed solar cells was 1400 mm2. The efficiency gain was due to reduction of shadowing loss from 7.7% to 6.0% without the increase of resistance due to two-layer front metallization.Simulation of hetero-junction silicon solar cells with AMPS-1DMono- and poly-crystalline silicon solar cell modules currently represent between 80% and 90% of the PV world market. The reasons are the stability, robustness and reliability of this kind of solar cells as compared to those of emerging technologies. Then, in the mid-term, silicon solar cells will continue playing an important role for their massive terrestrial application. One important approach is the development of silicon solar cells processed at low temperatures (less than 300 °C) by depositing amorphous silicon layers with the purpose of passivating the silicon surface, and avoiding the degradation suffered by silicon when processed at temperatures above 800 °C. This kind of solar cells is known as HIT cells (hetero-junction with an intrinsic thin amorphous layer) and are already produced commercially (Sanyo Ltd.), reaching efficiencies above 20%. In this work, HIT solar cells are simulated by means of AMPS-1D, which is a program developed at Pennsylvania State University. We shall discuss the modifications required by AMPS-1D for simulating this kind of structures since this program explicitly does not take into account interfaces with high interfacial density of states as occurs at amorphous-crystalline silicon hetero-junctions.太阳能硅电池的软件仿真设计与制造Mapping the performance of PV modules, effects of module type and data averaging统计实验与数据收集处理：太阳能发电电池背板组件模块的效用与背板材料开发方向选取Solar EnergyA method is presented for estimating the energy yield of photovoltaic (PV) modules at arbitrary locations in a large geographical area. The method applies a mathematical model for the energy performance of PV modules as a function of in-plane irradiance and module temperature and combines this with solar irradiation estimates from satellite data and ambient temperature values from ground station measurements. The method is applied to three different PV technologies: crystalline silicon, CuInSe2 and CdTe based thin-film technology in order to map their performance in fixed installations across most of Europe and to identify and quantify regional performance factors. It is found that there is a clear technology dependence of the geographical variation in PV performance. It is also shown that using long-term average values of irradiance and temperature leads to a systematic positive bias in the results of up to 3%. It is suggested to use joint probability density functions of temperature and irradiance to overcome this bias.Outdoor performance evaluation of photovoltaic modules using contour plots户外太阳能电池背板发电效果/转化率评估评价Current Applied PhysicsThe impact of environmental parameters on different types of Si-based photovoltaic (PV) modules (single crystalline Si (sc-Si), amorphous Si (a-Si) and a-Si/ microcrystalline Si (μc-Si)) which have different spectral responses were characterized using contour plots. The contour plots of PV performance as a function of module temperature and spectral irradiance distribution were created to separate the impact of the two environmental parameters. The performance of the sc-Si PV module was dominated by the module temperature while those of a-Si and a-Si/μc-Si ones were mainly influenced by the spectral irradiance distribution. Furthermore, the frequency of outdoor conditions and the reliability of the contour plots of the PV performance were discussed for the evaluation of PV modules by means of energy production.最新应用物理学学报Solar photovoltaic charging of lithium-ion batteries太阳能——锂电池充电器Power SourcesSolar photovoltaic (PV) charging of batteries was tested by using high efficiency crystalline and amorphous silicon PV modules to recharge lithium-ion battery modules. This testing was performed as a proof of concept for solar PV charging of batteries for electrically powered vehicles. The iron phosphate type lithium-ion batteries were safely charged to their maximum capacity and the thermal hazards associated with overcharging were avoided by the self-regulating design of the solar charging system. The solar energy to battery charge conversion efficiency reached 14.5%, including a PV systemefficiency of nearly 15%, and a battery charging efficiency of approximately 100%. This high system efficiency was achieved by directly charging the battery from the PV system with no intervening electronics, and matching the PV maximum power point voltage to the battery charging voltage at the desired maximum state of charge for the battery. It is envisioned that individual homeowners could charge electric and extended-range electric vehicles from residential, roof-mounted solar arrays, and thus power their daily commuting with clean, renewable solar energy.Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration材料配比方案与实验选择配置方法Applied Surface Science 应用表面材料科学学报Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configuration of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355 nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (Energy Dispersive Using X-Ray) analysis, electrical measurements and confocal profiles. In order to evaluate the damage in the silicon layer, Raman spectroscopy has been used for the last laser process step. Raman spectra gives information about the heat affected zone in the amorphous silicon structure through the crystalline fraction calculation. The use of ultrafast sources, such as picoseconds lasers, coupled with UV wavelength gives the possibility to consider materials and substrates different than currently used, making the process more efficient and easy to implement in production lines. This approach with UV laser sources working from the film side offers no restriction in the choice of materials which make up the devices and the possibility to opt for opaque substrates. Keywords: laser scribing; selective ablation; a-Si:H.Use of digital image correlation technique to determine thermomechanical deformations in photovoltaic laminates: Measurements and accuracy数字化图像匹配技术在太阳能材料评估实验中的应用：决策准确性的提高Solar Energy Materials and Solar Cells 太阳能材料与电磁学报An experimental technique to measure the deformation of solar cells in transparent PV modules is presented. This method uses the digital image correlation technique with a stereo camera system. Deformations resulting from thermal loading, where rather small deformations occur compared to tensile or bending experiments, are measured by viewing through the window of a climate chamber. We applythis method to measure the thermomechanical deformation of the gap between two crystalline silicon solar cells by viewing through the transparent back sheet of the laminate. Two PV laminates are prepared, each with three crystalline silicon solar cells that are embedded in transparent polymer sheets on a glass substrate. The first laminate (A) contains non-interconnected cells while the second laminate consists of a standard-interconnected cell string (B). We find the gap between two solar cells to deform 66.3±2 μm between 79.6 and −17.3 °C (laminate A) and 66.4±2 μm (laminate B) between 84.4 and −39.1 °C. We determine an accuracy of 1 μm in displacement for the gap experiment by measuring free expansion of a copper strip and averaging displacement values over regions with homogeneous deformation. Furthermore, the relative error contribution in strain due to the optical influence of the layers on top of the object surface is less than 1×10−6 for one camera. This is proven by a geometrical consideration.Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films太阳能发电产氢系统应用中，硅薄膜/贴膜的特性、形态及其性能优化VacuumIn this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B2H6) was a doping agent, and the flow ratio ηof B2H6component to silane (SiH4) was varied in the experimental. Films’ surface morphology was investigated with atomic force microscopy (AFM); Raman spectroscopy, X-ray diffraction (XRD) was performed to study the crystalline volume fraction Xc and crystalline size d in films. The electrical and optical properties were gained by Keithly 617 programmable electrometer and ultraviolet-visible (UV-VIS) transmission spectra, respectively. It was found that: there are on the film surface many faulty grains, which formed spike-like clusters; increasing the flow ratio η, crystalline volume fraction Xc decreased from 40.4 % to 32.0 % and crystalline size d decreased from 4.7 to 2.7nm; the optical band gap E g opt increased from 2.16 to 2.4eV. The electrical properties of p-type nc-Si:H films are affected by annealing treatment and the reaction pressure.。
晶体硅太阳电池的缺陷检测
图2-2 Semilab WT-2000 测试仪
光源波长：407，662，852， 973 nm
Light Beam Induced Current，LBIC
图 1-1 红外成像检测示意图
测试室采用气动门，一键式操作
1 红外成像检测技术简介
图 1-1 红外成像检测示意图
建成多功能测试系统
1 3
红红外外成热像成L检像ig测测h技试t术实B简例e介分a析m
图2-4 电池样品的LBIC扫面图象
2.1 测试原理及设备
LBIC与红外成像的区别
光诱导电流LBIC
红外成像
激励源
多波长激光
激光、电源
检测对象
电流、反射光
红外辐射
测量方式
逐点扫描
整体成像
检测结果 精确度
光诱导电流、反射率、 IQE、少子扩散长度
精确的电池性能数值
红外图像 红外辐射的数值
时间
时间长
快速
+ 电源
-
图 1-1 红外成像检测示意图
图1-2 市场上的EL设备
1.1 红外成像检测技术简介
系统构成及差别
激励源
测试 对象
红外 相机
处理 系统
恒压/恒流 电源、 周期性电源 激光源
硅片 电池 组件
工作波段； 制冷方式； 工作像素； 成像方式
直接图象； 锁相处理； 标示异常区； 诊断软件
1.1 红外成像检测技术简介 应用市场—硅片、电池、组件生产全过程检测
2.1 测试原理及设备
Semilab WT -2000 LBIC 测试性能
➢扫描区域：最大 210×210 mm ➢测试电流范围：1 uA – 1 mA ➢光源波长：407，662，852， 973 nm ➢光斑直径： 100μm ➢扫描步长: 0.25，0.5，1，2，4，8，16mm ➢扫描速度: 50 points/s ➢可进行单点或连续扫描(mapping)测试 ➢测试结果包括：光诱导电流、反射率、量子 效率、少子扩散长度
硅基光伏电池缺陷电脉冲红外热成像检测技术研究
硅基光伏电池缺陷电脉冲红外热成像检测技术研究硅基光伏电池缺陷电脉冲红外热成像检测技术研究摘要：在太阳能电力发电领域，硅基光伏电池是最为成熟的太阳能电池。
然而，在大规模应用中，硅基光伏电池存在多种缺陷，如晶界、晶粒边界、金属污染、表面缺陷和生长缺陷等问题。
这些缺陷直接影响光伏电池的转换效率和寿命，因此对于硅基光伏电池的缺陷检测和诊断技术的研究具有重要的意义。
本文针对硅基光伏电池晶界和晶粒边界缺陷的检测，提出了一种基于电脉冲红外热成像技术的新型检测方法。
该方法可实现对硅基光伏电池缺陷的高精度、高分辨率的检测，检测出的缺陷信息直观明了，并且具有高度的可重复性和稳定性。
首先，本文阐述了硅基光伏电池的主要结构和性能参数，总结了硅基光伏电池的常见缺陷类型，阐述了传统的检测方法的优缺点。
其次，通过实验对比，详细分析了电脉冲红外热成像技术检测硅基光伏电池晶界和晶粒边界缺陷的试验结果，证明了该方法的有效性和可靠性。
最后，本文分析了电脉冲红外热成像技术在实际应用中存在的问题，并提出未来的研究方向和改进措施。
关键词：硅基光伏电池；缺陷检测；电脉冲；红外热成像；晶界；晶粒边界Abstract：In the field of solar power generation, silicon-based photovoltaic cells are the most mature solar cells. However, in large-scale applications, silicon-based photovoltaic cells have various defects such as grain boundaries, metal contamination, surface defects, and growth defects. These defects directly affect the conversion efficiency and life of photovoltaic cells. Therefore, research on defect detection and diagnostic technology of silicon-based photovoltaic cells is of great significance.In this paper, a new detection method based onelectric pulse infrared thermal imaging technology is proposed for the defect detection of silicon-based photovoltaic cell grain boundaries and boundaries. The method can realize high-precision and high-resolution detection of silicon-based photovoltaic cell defects, and the detected defect information is intuitive and clear, and has high repeatability and stability.Firstly, this paper elaborates on the main structure and performance parameters of silicon-basedphotovoltaic cells, summarizes the common types of defects of silicon-based photovoltaic cells, and expounds the advantages and disadvantages oftraditional detection methods. Secondly, through experimental comparison, the experimental results of using electric pulse infrared thermal imaging technology to detect silicon-based photovoltaic cell grain boundaries and boundaries defects are analyzedin detail to prove the effectiveness and reliability of the method. Finally, this paper analyzes the problems of electric pulse infrared thermal imaging technology in practical applications, and proposes future research directions and improvement measures.Keywords: silicon-based photovoltaic cells; defect detection; electric pulse; infrared thermal imaging; grain boundaries; boundarie。
晶硅太阳能单晶电池EL缺陷分析研究
晶硅太阳能单晶电池EL缺陷分析研究【摘要】重点分析研究晶硅太阳能单晶太阳电池EL常见缺陷原因，电池片EL常见缺陷主要分为原材料类导致的缺陷及过程引入缺陷类。
通过对常见的EL缺陷分析研究及有利于改善电池片的产品质量，提升电池片成品的良率，还可进一步降低生产成本。
1.引言随着晶硅太阳能单晶电池EL质量要求越来越高，提升晶硅太阳能单晶电池EL质量变得尤为重要。
通过对单晶电池EL缺陷成因分析研究，可进一步改善电池片EL缺陷现象，实现晶硅电池质量提升和成本降低的目的。
2.EL技术介绍EL的测试原理主要是晶体硅太阳电池外加正向偏置电压，电源向晶硅电池注入大量非平衡载流子，电致发光依靠从扩散区注入的大量非平衡载流子不断地复合发光，放出光子；再利用CCD相机捕捉这些光子，通过计算机处理后显示出来，整个的测试过程是在暗室中进行。
有缺陷的地方，少子扩散长度较低，所以显示出来的图像亮度较暗。
3.常见晶硅太阳能电池EL缺陷常见晶硅太阳能电池EL缺陷主要分为原材料类导致的EL缺陷及生产过程引入缺陷类。
3.1面状EL发暗缺陷图1为面状EL发暗缺陷，通过测试分析与正常片相比色度较暗，通过WT1200面少子寿命测试仪器测试，图2显示整体面少子发暗片相比正常片偏低，利用酸溶液抛光电极重新制绒测碘钝化少子寿命，表1显示面状发暗少子寿命明显低于正常片。
原料面少子主要与材料存在关联。
此种材料缺陷势必导致硅的非平衡少数载流子浓度降低，降低该区域的EL发光强度。
此类原材来异常初步认为因拉晶过程引入杂质含量过高引起硅片材料本身缺陷，导致电池片EL测试面状发暗。
测试发暗片量子响应，与正常片对比，发暗片长波段量子响应明显偏低，趋势与原材料黑芯片类似长波段明显偏低。
测试图片如下所示。
3.2生产过程常见的EL缺陷3.2.1 EL云雾片缺陷类型1图3中分别为晶硅太阳能电池正常片EL、边角、面状云雾状EL发黑缺陷片。
通过TLM测试仪器分别测试正常片、边角,面状云雾状EL 发黑缺陷片面接触电阻。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
矿产资源开发利用方案编写内容要求及审查大纲
矿产资源开发利用方案编写内容要求及《矿产资源开发利用方案》审查大纲一、概述
㈠矿区位置、隶属关系和企业性质。
如为改扩建矿山, 应说明矿山现状、
特点及存在的主要问题。
㈡编制依据
(1简述项目前期工作进展情况及与有关方面对项目的意向性协议情况。
(2 列出开发利用方案编制所依据的主要基础性资料的名称。
如经储量管理部门认定的矿区地质勘探报告、选矿试验报告、加工利用试验报告、工程地质初评资料、矿区水文资料和供水资料等。
对改、扩建矿山应有生产实际资料, 如矿山总平面现状图、矿床开拓系统图、采场现状图和主要采选设备清单等。
二、矿产品需求现状和预测
㈠该矿产在国内需求情况和市场供应情况
1、矿产品现状及加工利用趋向。
2、国内近、远期的需求量及主要销向预测。
㈡产品价格分析
1、国内矿产品价格现状。
2、矿产品价格稳定性及变化趋势。
三、矿产资源概况
㈠矿区总体概况
1、矿区总体规划情况。
2、矿区矿产资源概况。
3、该设计与矿区总体开发的关系。
㈡该设计项目的资源概况
1、矿床地质及构造特征。
2、矿床开采技术条件及水文地质条件。