y,Revision,M2 U3
NovaJet750 写真机主板电路原理图(本人原创)
RAM_D[0..31]
B
B
C
C
D
Title Size A4 Date: File: 1 2 3 2010-4-5 Sheet of F:\d dabafen\750-II\MB2008\deal.SCHDOC Drawn By: 4 Number Revision
D
PDF created with pdfFactory trial version
U26
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 VCC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 RY/BY# CE# OE# WE# RESET# VSS VSS VCC 1 CPU_D[0..31] 17 18 19 20 24 25 26 27 28 43 29 30 2 21 22 A_DQ0 A_DQ1 A_DQ2 A_DQ3 A_DQ4 A_DQ5 A_DQ6 A_DQ7 FL0 CPU_C4 CPU_A4 RESET A CPU_D[0..31]
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Title Size A4 Date: File: 1 2 3 2010-4-5 F:\d dabafen\..\M1_POWER.SCHDOC Sheet of Drawn By: 4 Number Revision
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PDF created with pdfFactory trial version
F3
Fuse 1 VCC_T
U5 3 IN 1 C62 Cap Pol3 100pF C16 Cap Pol3 100pF
* OUT
VCC3 2 4
M201_MB_V1.0(06-09)
A BB-POWER
COMPANY:
LongYu Century Technology Co.,Ltd. M201_MB_V1.0
TITLE:
DRAWN:
DATED:
RTCVDD is output
CHECKED:
Zhangzh Fenghz
QUALITY CONTROL:
2010/05/18
DATED:
C110 2.2uF
H3 J2
AGNDVB VDDAO
VDD VDD
V4 U4 T5 U5 T6
PA_AUDIO_EN
VBAT
J3 VSSAO
VDD
B
EMWAIT EMCRE FLASH_RSTN EMCLK
GPIO
GPI_0/PWM GPI_1
VMEM
VMEM VMEM J13 A4 T9 A9 C116 2.2uF C117 2.2uF TP301
X100 SSP-T7-F 3 NC 22uF XH414H IV01E 4 OUT 2 NC C124 22PF
C125
1 IN C123 22PF
EMA[13] EMA[14] SPI1_DO/U1TXD EMA[15] SPI1_DI/U1RXD EMA[16] EMA[17] SPI1_CS0/GPO_47 EMA[18] EMA[19] U0TXD EMA[20] EMA[21] EMA[22]/EMCEN4 U0RTS/U1TXD/GPIO_49 U100-A U0RXD ASIC-SC6600L1-224 M7 N7 N9 N8
SIM1
SIMCLK1
JTAG
MTDI/GPO_39 MTCK/GPO_40
cy M3 U1 Revison and consolidation of Noun Clauses导学案
Revision and consolidation of Noun Clauses◆课标要求1．To differ the Attributive Clause(AT) and the Noun Clause；2．To review different kinds of Noun Clauses；3．To consolidate the important points of Noun Clauses。
◆重点难点1．The differences between AT and Noun Clauses；2．The differences between AT and Ap。
导学第一案---独学案（课前预习，独立感悟）【自主研习】I. The differences between the attributive clause and noun clause.(定从和名从的区别）II. The development of noun clauses.（名词性从句的演变）【预习自测】I. Please find out the attributive clauses and noun clauses in the following sentences.1. That evening at 8.p.m, Justin went to play baseball with two friends, who both say Justin went home after the game.2. Witnesses also say they saw Justin walking towards his house at 10:45 p.m.3. Kelly said that the spaceship then moved aruond to the side of the house, towards her brother‟s bedroom.4. There‟s really no hard evidence that aliens took him.5. We will not give up until we find out what happend.6. It was believed that a spaceship from the Earth was taking photos of teh surface of Mars.7. We are what we eat.8. The first person who travelled in space was Yuri Gagarin from the former Soviet Union.II. Please join each pair of sentences into one, using one of them as a Noun Clause.(that-clause, whether/if clause, wh-clause)1.I want to tell her something. I will try to keep up with her.I want to tell her that I will try to keep up with her..2.When will he come back? I wonder.I wonder when he will come back.3.Will she forget my birthday? I don‟t know.I don‟t know whether/if she will forget my birthday.4.How did he get so much money? It puzzled me a lot.How he got so much money puzzled me a lot./It puzzled me a lot how he got so much money.沅江一中“创新课堂，有效教学”XX科导学案第1页（共4页）5.Why didn‟t he come to school? I can‟t understand it.I can‟t understand why he didn‟t come to school.6.The Earth moves around the Sun. It is known to us all.That the earth moves around the sun is known to us all./It is known to us all that the earth moves around the sun.导学第二案---研学案（课中探究，互助解惑）【展示交流】考点回顾I. The order of noun clauses(语序）笔记要点：名词性从句需采用句语序。
全志H3官方参考设计 h3_prototype_ddr3_16x2_v3_0_201
A
H3-Prototype
Size A3 Date: Page Name Rev Sheet 1 of 13
REVISION HISTORY
Thursday, November 13, 2014
5
4
3
2
1
BLOCK
5
4
3
2
1
D
D
LPDDR3 32X1 eMMC/NOR/tSD HDMI OUT
POWER TΒιβλιοθήκη EEThursday, November 13, 2014
5
4
3
2
1
GPIO ASSIGNMENT
5
4
3
2
1
D
C
PIN Define CFGFunction PA0 TMS/DRVVBUS0 3/1 PA1 TCK/DRVVBUS1 3/1 JTAG PA2 TDO/WPS 3/1 /USB PA3 TDI 3 UART-TX PA4 3 UART PA5 UART-RX 3 7 PA6 NC PA7 NC 7 PA8 NC 7 PA9 NC 7 7 PA10 NC 7 PA11 NC PA12 NC 7 7 PA13 NC PA14 NC 7 LED PA15 STATUS-LED 1 1 AV PA16 MUTE SPDIF PA17 SPDIF-OUT 2 PA18 NC 7 PA19 NC 7 PA20 NC 7 PA21 NC 7
B
5V@2A
B
POWER
A
AllWinner Technology Co.,Ltd
Design Name
A
H3-Prototype
KSZ8041TL-FTL评估板原理图
3.3V
LED2 1 2 4 LEDx2 R52 R54 220 220 LED0 LED1
RXD3 RXD2 RXD1 COL CRS RXDV RXER LED0 LED1 RXD0
A
CONFIDENTIAL & PROPRIETARY
Title
KSZ8041TL-FTL Eval Board Revision 1.1
Size Date:
1 2 3 4
Document Number
Revision History
Thursday, August 09, 2007 Sheet
5
Rev 2.0 1 of 6
36 35 34 33 32 31 30 29 28 27 26 25
R39 R40 R41 R42 R43 R44 R45 R46
33 33 33 33 33 33 33 33
INTRP RXER RXC RXDV RXD0 RXD1 RXD2 RXD3 MDC MDIO C33 0.1uF
C
3.3V
J14 J15 J16 J17 J18 J19 J20 J21 J22 J23
JUMPER JUMPER JUMPER JUMPER JUMPER JUMPER JUMPER JUMPER JUMPER JUMPER
R51 R53 R55 R56 R57 R58 R59 R60 R61 R62
Input Output Output Output
NOTE: * Schematic Revision 1.x is for KSZ8041TL-FTL Eval Board Revision 1.0. Schematic Revision 2.x is for KSZ8041TL-FTL Eval Board Revision 1.1.
AX301_AX4010_SCH
U4
100uF/16V 6
100uF/16V
NC NC NC NC NC 9 RST
10k
VDD
C 23 24 26 25 CTS RTS TXD RXD GND 3
C1 1uF
C2 10uF
D1V2
U5 GND
RXD TXD
OUT =
4
1117-1.2
C
1
2
3
IN D3V3 EC5
VCC 28 12 11 2 1 27 DTR SUSPEND SUSPEND RI DCD DSR VBUS REGIN DD+ 8 7 5 4 P4 EC4 DM DP 100uF/16V* * * * *123
4
U3E IO IO IO IO IO, RUP3, (DM1R/BWS#1R)/(_) IO, RDN3, (DQ1R)/(_) IO, DIFFIO_R11n, (DQS3R/CQ3R#)/(DQS3R/CQ3R#) IO, DIFFIO_R11p, (DQ1R)/(_) IO IO, DIFFIO_R10n, (DQ1R)/(_) IO, DIFFIO_R10p, (DQ1R)/(_) IO, VREFB5N0 IO, (DQ1R)/(_) IO, DIFFIO_R9n, (DQ1R)/(_) IO, DIFFIO_R9p IO IO, DIFFIO_R8n, (DQ1R)/(_) IO, DIFFIO_R8p, (DQS1R/CQ1R#,DPCLK4)/(DQS1R/CQ1R#,DPCLK4) IO, DIFFIO_R7n, (DEV_OE) IO, DIFFIO_R7p, (DEV_CLRn) IO, DIFFIO_R6n, (DQ1R)/(_) IO, DIFFIO_R6p IO, (DQ1R)/(_) N13 M12 L12 K12 N14 P15 P16 R16 K11 N16 N15 L14 L13 L16 L15 J11 K16 K15 J16 J15 J14 J12 J13 RESET S_DB1 S_DB3 S_DB7 S_DB2 DIG4 DIG2 DIG7 S_NRAS DIG1 DIG6 S_DB5 S_DB4 S_DB14 S_DB15 S_DB9 S_DB12 S_DB13 S_DB10 S_DB11 S_DQM0 S_NCAS S_NWE
U3C资料
New ProductU3B, U3C & U3DVishay General Semiconductor Document Number: 89066For technical questions within your region, please contact one of the following:Surface Mount Ultrafast Plastic RectifierFEATURES•Oxide planar chip junction•Ultrafast recovery time•Low forward voltage, low power losses•High forward surge capability•Meets MSL level 1, per J-STD-020,LF maximum peak of 260 °C•Solder dip 260 °C, 40 s•Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/ECTYPICAL APPLICATIONSFor us in high frequency rectification and freewheelingapplication in switching mode converters andinverters for consumer, computer, automotive andtelecommunication.MECHANICAL DATACase: DO-214AB (SMC)Epoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable perJ-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class1A whisker testPolarity:Color band denotes cathode endPRIMARY CHARACTERISTICSIF(AV)3.0 AV RRM100 V, 150 V, 200 VI FSM100 At rr20 nsV F at I F = 3.0 A0.74 VT J max.150 °CDO-214AB (SMC)Notes:(1) Free air, mounted on recommende copper pad area(2) Units mounted on P.C.B. with 0.47 x 0.47" (12 x 12 mm) copper pad areas.MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAME ER SYMBOLU3B U3C U3D UNI Device marking code U3B U3C U3DMaximum repetitive peak reverse voltage V RRM 100150200VMaximum average forward rectified current(Fig. 1)T M = 134 °CT M = 125 °CI F(AV)2.0 (1)3.0 (2)A Peak forward surge current 8.3 ms single half sine-wavesuperimposed on rated loadI FSM 100 AOperating junction and storage temperature range T J, T STG- 55 to + 150 °C元器件交易网New ProductU3B, U3C & U3DVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89066Notes:(1)Pulse test: 300 µs pulse width, 1 % duty cycle (2)Pulse test: Pulse width ≤ 40 msNote:(1) Free air, mounted on recommended copper pad area. Thermal resistance R θJA - junction to ambient, R θJM - junction to mountRATINGS AND CHARACTERISTICS CURVES(T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAME ER T ES T CONDI T IONS SYMBOL T YP.MAX.UNI TInstantaneous forward voltage (1)I F = 3.0 A T A = 25 °C T A = 100 °C V F 0.850.740.900.83V Reverse current (2)rated V RT A = 25 °C T A = 100 °C I R -25010500µA Reverse recovery timeI F = 0.5 A, I R = 1.0 A,I rr = 0.25 AT A = 25 °C t rr -20nsI F = 3.0 A, dI/dt = 50 A/µs, V R = 30 V , I rr = 0.1 I RM T A = 25 °C T A = 100 °C t rr 25353050ns Storage chargeI F = 3.0 A, dI/dt = 50 A/µs, V R = 30 V , I rr = 0.1 I RM T A = 25 °C T A = 100 °CQ rr9221535nC Typical junction capacitance4.0 V , 1 MHzC J 25-pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAME TERSYMBOL U3B U3CU3DUNI TTypical thermal resistance (1) R θJAR θJM9210°C/WORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U3D-E3/57T 0.23957T 8507" diameter plastic tape and reel U3D-E3/9AT0.2399AT350013" diameter plastic tape and reelFigure 1. Maximum Forward Current Derating CurveFigure 2. Forward Power Loss Characteristics元器件交易网New ProductU3B, U3C & U3DVishay General Semiconductor Document Number: 89066For technical questions within your region, please contact one of the following: PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Figure3. Typical Instantaneous Forward CharacteristicsFigure4. Typical Reverse Leakage CharacteristicsFigure5. Typical Junction CapacitanceFigure6. Typical Transient Thermal Impedance元器件交易网Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。
人教pep版英语U3 Where did you go(全单元)教案
Unit 3 Where did you goPart A教学内容Let’s learn, Listen, answer and write, Let’s try, Let’s talk教学目标【知识目标】1.四会词汇：went, camp, went camping, fish, went fishing, rode, hurt2.三会词汇：fell, off, Labour Day, mule, Turpan, could, till3.重点句型：(1)—Where did you go —I went to a forest park. (2)—Did you go to Turpan —Yes,we did.【能力目标】1.能够听、说、读、写四会词汇，能够听、说、认读三会词汇。
2.能够对某人去过的地方和所做的事情进行问答。
如:Where did you go I went to…What did you do yesterday I visited my grandparents.3.能够用一般过去时的一般疑问句形式询问别人过去某个时间所做的事情并作答。
如：Did you go fishing last weekend Yes,I did./No,I didn’t.【情感目标】自由地谈论去过的地方和做过的事情，激发学生对过去经历的美好回忆。
热爱生活，学会分享，增进友谊。
教学重点1.能听、说、读、写过去式单词went，rode，hurt和词组went camping，went fishing等;能正确使用动词过去式。
2.能利用“Where did you go？What did you do？〞互相询问去过的地方和做过的事情，并能根据实际情况灵活作答。
教学难点1.掌握本局部的新单词并利用过去式的变化进行描述。
2.灵活运用“Where did you go？〞“What did you do？〞谈论去过的地方和做过的事情。
M3U3复习材料.doc
英译汉1 .civilization n.2.erupt vi. __________3 . unfortunate adj.mercial adj.5.gradually adv.6.document n.7.ceremony n.8.aircraft n.9.memorial n. /adj.10.corrupt vt./adj.汉译英重点短语1 _________________ .take over2. turn out ___________3.take...as an example4.make one's way5.in memory of6.rise up against 11.兴建，创造vt.12.装饰，装潢vt.13.灾难n.14.毁坏，摧毁vt.15.遗物，遗迹n.16.表达；神色n.17.宣布；宣称vt.18.教育vt.19.意识到的，知道的adj 法官，审判员n.12.13.14.15.16.17.18.19.9.as a result of 20.10.start from分解，故障，毁掉削导执厌认意把阻注倒施砍实威致彷把事某死做咂-—•核心语句1.Many people were buried alive, .(Page 42)许多人被活生生地掩埋了，城市也被掩埋。
2.Today I saw the ancient Roman city of Pompeii .(Page 42)今天我看见古罗马城庞贝跟两千年前一模一样。
3.…，their bodies nearly completely broke down and disappeared, .(Page 43)……他们的尸体儿乎全部分解，只留下火山灰里的人形空间。
4.___________________________by sandstorms from AD 200 to AD 4OO.(Page 43)据认为公元200至400年，它已经被沙尘暴逐渐掩埋。
revit管理许可不可用及注册表删除
revit管理许可不可用-注册表删除许可管理器不起作用等问题如图：问题通过网上各种方法尝试，软件重装了n次，最后就差没有重装系统了。
多次安装和激活不成功，其原因在于注册表文件未彻底删除。
如何彻底删除注册文件呢？第一步：通过控制面板,卸载revit软件；第二步：卸载revit相关软件；第三步：根据需要找到并删除以下文件：C:\ProgramData\FLEXnet文件内的文件删除C:\ProgramData\Autodesk\RVT 2022文件夹及内容删除C:\Users\Administrator\AppData\Local\Autodesk\Revit\Autodesk Revit 2022文件夹及内容删除C:\Users\Administrator\AppData\Roaming\Autodesk\Revit\Autodesk Revit 2022文件夹及内容删除C:\Program Files (x86)\Common Files\AutodeskShared\AdskLicensing\11.0.0.4854文件夹及内容删除第4步：打开系统注册表快捷键“windows+R”，运行—“regedit”进入注册表编辑器第5步：找到并删除以下注册表项计算机\HKEY_CURRENT_USER\SOFTWARE\Autodesk\Revit\Autodesk Revit 2022计算机\HKEY_LOCAL_MACHINE\SOFTWARE\Autodesk\Revit\Autodesk Revit 2022计算机\HKEY_LOCAL_MACHINE\SOFTWARE\Autodesk\ RVT 2022第6步：重启电脑第7步：断网关闭杀毒软件，按安装说明进行安装并破解；。