全球半导体晶体生长仿真著名商业软件FEMAG之FEMAG-CZ - Czochralski Crystal Growth Simulation
晶体生长模拟软件FEMAG之晶体生长各种方法

FEMAGSoft © 2010
VB Growth Method
VB is widely used to grow Si/Ge and compound crystals: (待续)………………
t 1800 1740 1680 1620 1560 1500 1440 1380 1320 1260 1200 1140 1080 1020 960 900 840 780 720 660 600 540 480 420 360 300
2) Part of Germanium crystal grown by CZ method 3) Sappher and lots Compound crystal grown by CZ or its variants, such as Kyropoulos, LEC etc. 4) Market share of CZ wafer in solar market slightly lower than DSS mc wafer
It is assumed that for a certain region of the thermal stresses the crystal is in a metastable state, and a certain perturbation energy is necessary to leave this metastable state. By this model, it can be understood that the crystal can bear higher stresses than the critical values determined by a tensile test. Conforming to the classical idea of dislocation generation it starts somewhere near the growth interface, where the highest stresses are located and then grows deeper into the crystal. At these points of high stress level, the dislocation process may be started due to a perturbation energy resulting from:
FEMAG整体介绍

仿 真 智 领 创 新
Simulating inspires innovation
FEMAG/CZ软件的主要功能
• 与时间相关的动态模拟与缺陷和空位浓度控制
全局动态模型预测每个阶段的缺陷浓度(Ci-Cv)分布
仿 真 智 领 创 新
Simulating inspires innovation
Simulating inspires innovation
FEMAG公司简介
FEMAG公司成立于2003年,总部位于比利时
FEMAG致力于为全球用户开发专业的晶体生长多场耦合仿 真分析工具,为全球晶体设备供应商、晶体材料科研机构 提供设计、优化其生长工艺过程的帮助
• • • • • 比利时新鲁汶大学教授 Franç ois Dupret FEMAG公司创始人和首席科学家 国际晶体生长模型构建与仿真的奠基人 第二届晶体生长模型国际研讨会主席 曾任Journal of Crystal Growth主编
质量控制工程
成本控制工程
仿 真 智 领 创 新
Simulating inspires innovation
晶体生长仿真难点
晶体生长是一个复杂的过程,涉及:
多物理场耦合(传热、流体、磁场、热应力、传质) 多尺度耦合(多时间尺度、多空间尺度) 高度非线性过程
相变,材料参数高度温度依赖 熔体流动,考虑多种对流效应
FEMAG 产品线
仿 真 智 领 创 新
Simulating inspires innovation
FEMAG/CZ软件
• 模拟提拉生长工艺(直拉法, Czochralski 法, Cz 法,柴氏法)
• 适用于半导体单晶 Si 、 Ge 、太 阳能光伏单晶 Si 、 YAG 、小尺 寸蓝宝石等晶体提拉生长工艺 过程的2D/3D全局数值模拟 • FEMAG/CZ软件包括 CZ基本模 块与CZ/TMF模块
全球半导体晶体生长模拟著名商业软件FEMAG-CZ_-_Czochralski_Crystal_Growth_Simulation_by_FEMAGSoft

全球半导体晶体生长模拟著名商业软件FEMAG FEMAG-CZ - Czochralski Crystal Growth Simulationby FEMAGSoftFEMAG-CZ is a global crystal growth simulation software taking into account the furnace geometry, the materials and the operating conditions in order to provide the user with all the information required for his process development and optimization.Global heat transfer, Thermo-elastic stresses, Defect prediction, Melt flow and Heater power.Features∙» Evolution of the solid/liquid interface shape (dynamic simulation)∙» Thermal gradients in the liquid and solid phase∙» Heat fluxes in the overall furnace∙» Thermal-stresses in the crystal and hotzone components∙» Continuous feeding∙» Species (dopants and impurities) segregation and concentration∙» Magnetic fieldsSupported Languages:EnglishSupported TechnologiesOperating Systems:LinuxProgramming Languages:C/C++Product Type(s):SoftwareAdditional Product InformationFEMAG family products provide so-called ''global calculations'' , meaning that all the constituents of the furnace are taken into account, together with all heat transfer modes within and between them (conduction, convection and radiation). The modelling of conduction includes the possibility of temperature-dependent and anisotropic conductivity. The modelling of radiative heat exchanges assumes diffuse radiation and can take into account semi-transparent materials through wavelength-dependent radiative properties.The flow in the melt phase can be modelized by a laminar and/or turbulent model. It takes into account natural convection, due to temperature-dependent density and surface tension, and forced convection due to crystal, crucible and/or polycrystal - in case of the FZ process - rotations, possibly under the influence of a magnetic field (axial, cusp, rotating or transverse). Melt flow calculation also considers the effect of gas flow and of tangential forces due to induction (if any) on melt surface.The flow in the gas phase, as a result of an imposed flow rate at gas inlet and of temperature-dependent density, can be modelized by a laminar or a turbulent model.The heating of the process is modelized: ohmic heaters (one or several, coupled or independent) or inductors. In the case of multiple heaters, the user has the possibility to control the heating powers by imposing a specific temperature at given control points.The shapes of interfaces and free-surfaces of the system are calculated. The solidification front and melting front - in case of the FZ process - shapes are calculated taking into account heat dissipation (or absorption) proportional to the growth rate. The melt/gas interface is calculated, as a result of a balance of surface tension, gravity and normal forces due to induction (for the FZ process), providing an accurate meniscus shape.The processes can be modelized by a quasi-steady or by a time-dependent model. The quasi-steady model takes into account the effect of growth rate on heat transfer while assuming a fixed position for all constituents. The time-dependent model considers a geometry that evolves due to crystal lengthening and melt shrinking. It also takes into account the transient effects due to the thermal inertia of all constituents, and due to the inertia of the solidification front shape.Global heat transfer. Temperature isolines are separated by 50 K.。
利用晶体生长计算软件FEMAG进行晶体生长计算仿真的结果图 ppt课件

利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
• FEMAG软件是世界上第一款商业的材料晶体生长数值模拟软件,由比利时 新鲁汶大学教授Dr. François Dupret于20世纪80年代中期领导开发。
• Dr. François Dupret是第二届晶体生长模型国际研讨会主席、EUROTHERM相 变热力学研讨会联合主席、机械工程学位委员会主席,曾担任国际晶体生 长(Journal of Crystal Growth)期刊主编。
• FEMAG软件拥有国际上最先进、最高效、最全面的晶体生长工艺模拟技术 和多物理场耦合仿真功能,可模拟的晶体生长工艺包括提拉法(柴氏法,Cz 法)、泡生法(Ky法)、区熔法(FZ法)、坩埚下降法(垂直布里兹曼法, VB法)、物理气相传输法(PVT法)等,广泛应用于集成电路、太阳能光伏 、半导体、蓝宝石等领域。ON Semiconductor(安森美半导体)、美国 Kayex、Siltronic(世创电子材料)、AXT(美国晶体技术集团)、韩国 Nexolon、LG、韩国汉阳大学、Norut(挪威北方研究所)、日本SUMCO集团 、Gritek(有研新材料)、天津环欧半导体材料、中环股份、北京有色金属 研究总院、清华大学等企业和科研机构,均是FEMAG软件的用户。
FEMAG定向凝固模拟软件用于设计新的热场,并研发新的 方法以满足新的商业需求点,比如: ✓晶体微结构 ✓优化 ✓扩大生产规模
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行晶体生长计 算仿真的结果图
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行 晶体生长计算仿真的结果图
全球半导体晶体生长建模著名商业软件FEMAG 横向磁场直拉硅晶体生长的全局模拟 优质课件

FEMAGSoft © 2013
Cz Si growth under a TMF (cont’d)
Flow and global heat transfer in a silicon Cz puller
under the effect of a TMF (quasi-steady simulation)
Main modeling hypothesis:
- the viewed and hidden parts are calculated as axisymmetric
- or, equivalently, each surface of the enclosure is viewed as axisymmetric from the other surfaces
dH = L Ha-1 (L = Rs or Rc). Typically dH = 0.05 - 0.08 mm in industrial furnaces.
FEMAGSoft © 2013
Cz Si growth under a TMF (cont’d)
Transverse magnetic fields: FLET method
Bottom: velocity field magnitude and crosssection showing a sharp Hartmann layer along the melt-crucible interface.
FEMAGSoft © 2013
Cz Si growth under a TMF (cont’d)
Hypothesis:
Objective: global, quasi-steady or time-dependent calculations at a reasonable cost
全球半导体晶体生长仿真著名商业软件FEMAG--Numerical Simulation of Bulk Crystal Growth

Introduction (cont’d)
General objective of FEMAGSoft
• FEMAG-2 → FEMAG-3 software generation transition taking place from 2008-2009
→ strongly improved platform in terms of computation time, memory, etc.
FEMAGSoft © 2013
Introduction (cont’d)
Solving these problems requires …
• To develop a sound physical model for each separate effect
→ global and time-dependent modeling of heat transfer, turbulence modeling, defect modeling, …
Analysis of conical growth and shouldering stages m = 8.225 10-4 kg/m.s Wc= 3.82 rpm (0.4 s-1) Ws= -3.82 rpm (-0.4 s-1) Vpul = 1.8 cm/h (5. 10-6 m/s)
FEMAGSoft © 2013
1. Numerical strategy (cont’d)
FEMAG-1 timedependent simulation of Czochralski Ge growth
Direct dynamic simulation (imposed stepwise decrease of heater power, calculated crystal shape): evolution of the temperature field
晶体生长建模软件FEMAG介绍(八)--FEMAGPVT(物理气相传输法)

晶体⽣长建模软件FEMAG介绍(⼋)--FEMAGPVT(物理
⽓相传输法)
FEMAG/PVT软件的主要功能
FEMAG/PVT软件⽤于模拟物理⽓相传输法(Physical Vapor Transport process,PVT)晶体⽣长⼯艺,可以⽤于碳化硅单晶体、氮化铝、氧化锌多晶体等的PVT法⽣长⼯艺过程的模拟。
FEMAG/PVT软件的典型应⽤
FEMAG/PVT软件的典型应⽤是模拟碳化硅单晶的PVT法⽣长过程。
图1是碳化硅晶⽚。
碳化硅(SiC)是⼀种优质的宽带隙半导体材料,具有宽禁带、⾼击穿电场、⾼热导率、⾼饱和电⼦漂移速率等优点,可以满⾜⾼温、⼤功率、低损耗⼤直径器件的需求。
SiC单晶⽆法经过熔融法形成,⽽基于改进型Lely法的升华⽣长技术——物理⽓相传输法是获得SiC单晶的常⽤⽅法。
PVT法制备SiC单晶的⽣长原理是:⾼纯SiC粉源在⾼温下分解形成⽓态物质(主要为Si、SiC2、Si2C),这些⽓态物质在过饱和度的驱动下,升华⾄冷端的籽晶处进⾏⽣长。
过饱和度是由籽晶与粉源之间的温度梯度引起的。
图2是利⽤FEMAG/PVT软件计算碳化硅沉积腔内的温度梯度的结果。
晶体生长计算软件FEMAG系列之晶体生长方法介绍 ppt课件

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FEMAGSoft © 2010
定向凝固法(DSS)
在过去几年半导体晶体生长制造商都因采用直拉
法/垂直梯度凝晶体固生长法计(算软件CFZE/MVAGG系F列)之 而获益
晶体生长方法介绍
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FEMAGSoft © 2010
定向凝固法(DSS)
定向凝固法工艺的主要问题:
增加产出 晶粒尺寸的控制和增大 掺杂/杂质( C/N )分布 位错
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
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FEMAGSoft © 2010
晶体生长计算软件FEMAG系列之晶 体生长方法介绍
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晶体生长计算软件FEMAG 之
晶体生长方法介绍
晶体生长计算软件FEMAG系列之
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晶体生长方法介绍
精品资料
• 你怎么称呼老师? • 如果老师最后没有总结一节课的重点的难点,你
是否会认为老师的教学方法需要改进? • 你所经历的课堂,是讲座式还是讨论式? • 教师的教鞭 • “不怕太阳晒,也不怕那风雨狂,只怕先生骂我
6
FEMAGSoft © 2010
ห้องสมุดไป่ตู้
String Ribbon法 (Evergreen Solar Inc.专利设计)
硅晶体生长方法
导模法(EFG)
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
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FEMAGSoft © 2010
热场设计的重要性
晶体生长的首要问题是设计适合的热场和 相应的操作条件,这不仅决定了晶体的主 要特性,对于每个集成电路晶片制造商而 言,也是最主要的核心技术所在。
FEMAGSoft © 2010
定向凝固法的热点问题
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
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全球半导体晶体生长仿真著名商业软件FEMAG FEMAG-CZ - Czochralski Crystal Growth Simulation
by FEMAGSoft
FEMAG-CZ is a global crystal growth simulation software taking into account the furnace geometry, the materials and the operating conditions in order to provide the user with all the information required for his process development and optimization.
Global heat transfer, Thermo-elastic stresses, Defect prediction, Melt flow and Heater power.
Features
∙» Evolution of the solid/liquid interface shape (dynamic simulation)
∙» Thermal gradients in the liquid and solid phase
∙» Heat fluxes in the overall furnace
∙» Thermal-stresses in the crystal and hotzone components
∙» Continuous feeding
∙» Species (dopants and impurities) segregation and concentration
∙» Magnetic fields
Supported Languages:English
Supported Technologies
Operating Systems:Linux
Programming Languages:C/C++
Product Type(s):Software
Additional Product Information
FEMAG family products provide so-called ''global calculations'' , meaning that all the constituents of the furnace are taken into account, together with all heat transfer modes within and between them (conduction, convection and radiation). The modelling of conduction includes the possibility of temperature-dependent and anisotropic conductivity. The modelling of radiative heat exchanges assumes diffuse radiation and can take into account semi-transparent materials through wavelength-dependent radiative properties.
The flow in the melt phase can be modelized by a laminar and/or turbulent model. It takes into account natural convection, due to temperature-dependent density and surface tension, and forced convection due to crystal, crucible and/or polycrystal - in case of the FZ process - rotations, possibly under the influence of a magnetic field (axial, cusp, rotating or transverse). Melt flow calculation also considers the effect of gas flow and of tangential forces due to induction (if any) on melt surface.
The flow in the gas phase, as a result of an imposed flow rate at gas inlet and of temperature-dependent density, can be modelized by a laminar or a turbulent model.
The heating of the process is modelized: ohmic heaters (one or several, coupled or independent) or inductors. In the case of multiple heaters, the user has the possibility to control the heating powers by imposing a specific temperature at given control points.
The shapes of interfaces and free-surfaces of the system are calculated. The solidification front and melting front - in case of the FZ process - shapes are calculated taking into account heat dissipation (or absorption) proportional to the growth rate. The melt/gas interface is calculated, as a result of a balance of surface tension, gravity and normal forces due to induction (for the FZ process), providing an accurate meniscus shape.
The processes can be modelized by a quasi-steady or by a time-dependent model. The quasi-steady model takes into account the effect of growth rate on heat transfer while assuming a fixed position for all constituents. The time-dependent model considers a geometry that evolves due to crystal lengthening and melt shrinking. It also takes into account the transient effects due to the thermal inertia of all constituents, and due to the inertia of the solidification front shape.
Global heat transfer. Temperature isolines are separated by 50 K.。