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Power Semiconductor Devices and Smart Power ICs

Answers of QuestionsChapter 11-1.P lease classify the power semiconductor discrete devices.A: power rectifiers and power switches.功率整流器和功率开关1-2.P lease list the name of popular power switch.A: power MOSFET, power BJT, IGBT, etc.功率MOS管，功率BJT管，IGBT等1-3.D efine the ideal power semiconductor device.A: It must be able to control the flow of power to loads with ZERO power dissipation.零功耗（包括导通损耗，关断损耗，开关损耗，均为零）1-4.D rawing out the switching waveform of ideal power switch.A:1-5.L ist the device name you known that has the normally-off performance.A: Normally-off: BJT, Enhancement MOSFET, VDMOS, Trench MOS, IGBT,Normally-on: JFET, Depletion MOSFET.1-6.W hich is preferable for normal system, normally-on device or normally-off? Give the reason.A: For normal system, normally-off device is preferable as it has the power dissipation lower than normally-on device’s.常关器件更好。

FSBB15CH60中文资料

FSBB15CH60 Smart Power Module44mm26.8mmFigure 1.FSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power Module Pin DescriptionsPin Number Pin Name Pin Description1V CC(L)Low-side Common Bias Voltage for IC and IGBTs Driving2COM Common Supply Ground3IN(UL)Signal Input for Low-side U Phase4IN(VL)Signal Input for Low-side V Phase5IN(WL)Signal Input for Low-side W Phase6V FO Fault Output7C FOD Capacitor for Fault Output Duration Time Selection8C SC Capacitor (Low-pass Filter) for Short-Current Detection Input9IN(UH)Signal Input for High-side U Phase10V CC(UH)High-side Bias Voltage for U Phase IC11V B(U)High-side Bias Voltage for U Phase IGBT Driving12V S(U)High-side Bias Voltage Ground for U Phase IGBT Driving13IN(VH)Signal Input for High-side V Phase14V CC(VH)High-side Bias Voltage for V Phase IC15V B(V)High-side Bias Voltage for V Phase IGBT Driving16V S(V)High-side Bias Voltage Ground for V Phase IGBT Driving17IN(WH)Signal Input for High-side W Phase18V CC(WH)High-side Bias Voltage for W Phase IC19V B(W)High-side Bias Voltage for W Phase IGBT Driving20V S(W)High-side Bias Voltage Ground for W Phase IGBT Driving21N U Negative DC–Link Input for U Phase22N V Negative DC–Link Input for V Phase23N W Negative DC–Link Input for W Phase24U Output for U Phase25V Output for V Phase26W Output for W Phase27P Positive DC–Link InputFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleAbsolute Maximum Ratings (T J = 25°C, Unless Otherwise Specified)Inverter Part Note:1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@T C ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to T J(ave) ≤ 125°C (@T C ≤ 100°C)Control Part Total System Thermal ResistanceNote:2. For the measurement point of case temperature(T C ), please refer to Figure 2.SymbolParameterConditionsRatingUnitsV PN Supply Voltage Applied between P- N U , N V , N W 450V V PN(Surge)Supply Voltage (Surge)Applied between P- N U , N V , N W500V V CES Collector-emitter Voltage 600V ± I C Each IGBT Collector Current T C = 25°C15A ± I CP Each IGBT Collector Current (Peak)T C = 25°C, Under 1ms Pulse Width 30A P C Collector DissipationT C = 25°C per One Chip 50W T JOperating Junction Temperature(Note 1)-20 ~ 125°CSymbolParameterConditionsRatingUnitsV CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH), V CC(L) -COM20V V BS High-side Control Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V), V B(W) -V S(W)20V V IN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL),IN (WL) - COM-0.3~17V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC +0.3V I FO Fault Output CurrentSink Current at V FO Pin5mA V SCCurrent Sensing Input Voltage Applied between C SC - COM-0.3~V CC +0.3VSymbolParameterConditionsRatingUnitsV PN(PROT)Self Protection Supply Voltage Limit (Short Circuit Protection Capability)V CC = V BS = 13.5 ~ 16.5VT J = 125°C, Non-repetitive, less than 2µs 400V T C Module Case Operation Temperature -20°C ≤ T J ≤ 125°C, See Figure 2-20 ~ 100°C T STG Storage Temperature -40 ~ 125°C V ISOIsolation Voltage60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate2500V rmsSymbolParameterConditionsMin.Typ.Max.UnitsR th(j-c)Q Junction to Case Thermal ResistanceInverter IGBT part (per 1/6 module) -- 2.02°C/W R th(j-c)FInverter FWD part (per 1/6 module)--3.15°C/WFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleElectrical Characteristics (T J = 25°C, Unless Otherwise Specified)Control Part Note:4. Short-circuit current protection is functioning only at the low-sides.5. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation : C FOD = 18.3 x 10-6 x t FOD [F]Recommended Operating ConditionsSymbolParameterConditionsMin.Typ.Max.UnitsI QCCL Quiescent V CC Supply CurrentV CC = 15VIN (UL, VL, WL) = 0V V CC(L) - COM --23mAI QCCH V CC = 15VIN (UH, VH, WH) = 0VV CC(UH), V CC(VH),V CC(WH) - COM--100µA I QBS Quiescent V BS Supply CurrentV BS = 15VIN (UH, VH, WH) = 0VV B(U) - V S(U), V B(V) -V S(V), V B(W) - V S(W)--500µAV FOH Fault Output Voltage V SC = 0V, V FO Circuit: 4.7k Ω to 5V Pull-up 4.5--V V FOL V SC = 1V, V FO Circuit: 4.7k Ω to 5V Pull-up --0.8V V SC(ref)Short Circuit Trip Level V CC = 15V (Note 4)0.450.50.55V UV CCD Supply Circuit Under-Voltage ProtectionDetection Level 10.711.913.0V UV CCR Reset Level 11.212.413.2V UV BSD Detection Level 10.111.312.5V UV BSR Reset Level10.511.712.9V t FOD Fault-out Pulse Width C FOD = 33nF (Note 5)1.0 1.8-ms V IN(ON)ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL),IN (VL), IN (WL) - COM3.0--V V IN(OFF)OFF Threshold Voltage--0.8VSymbolParameterConditionsValueUnitsMin.Typ.Max.V PN Supply Voltage Applied between P - N U , N V , N W-300400V V CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH),V CC(L) - COM13.51516.5V V BSHigh-side Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V),V B(W) - V S(W)13.01518.5V DV CC /Dt, DV BS /Dt Control supply variation -1-1V/µst dead Blanking Time for Preventing Arm-short For Each Input Signal 2.0--µsf PWM PWM Input Signal-20°C ≤ T C ≤ 100°C, -20°C ≤ T J ≤ 125°C --20kHz V SENVoltage for Current SensingApplied between N U , N V , N W - COM (Including surge voltage)-44VFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleFSBB15CH60 Smart Power ModuleTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FSBB15CH60 Smart Power ModuleDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I15。

FSBB20CH60F中文资料

FSBB20CH60F Smart Power Module44mm26.8mmFigure 1.12V S(U)High-side Bias Voltage Ground for U Phase IGBT Driving 13IN(VH)Signal Input for High-side V Phase14V CC(VH)High-side Bias Voltage for V Phase IC15V B(V)High-side Bias Voltage for V Phase IGBT Driving16V S(V)High-side Bias Voltage Ground for V Phase IGBT Driving 17IN(WH)Signal Input for High-side W Phase18V CC(WH)High-side Bias Voltage for W Phase IC19V B(W)High-side Bias Voltage for W Phase IGBT Driving20V S(W)High-side Bias Voltage Ground for W Phase IGBT Driving 21N U Negative DC–Link Input for U Phase22N V Negative DC–Link Input for V Phase23N W Negative DC–Link Input for W Phase24U Output for U Phase25V Output for V Phase26W Output for W Phase27P Positive DC–Link InputControl Part Total System Thermal Resistance Note:2. For the measurement point of case temperature(T C ), please refer to Figure 2.Package Marking and Ordering InformationSymbolParameterConditionsRatingUnitsV CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH), V CC(L) -COM20V V BS High-side Control Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V), V B(W) -V S(W)20V V IN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL),IN (WL) - COM-0.3~17V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC +0.3V I FO Fault Output CurrentSink Current at V FO Pin5mA V SCCurrent Sensing Input Voltage Applied between C SC - COM-0.3~V CC +0.3VSymbolParameterConditionsRatingUnitsV PN(PROT)Self Protection Supply Voltage Limit (Short Circuit Protection Capability)V CC = V BS = 13.5 ~ 16.5VT J = 125°C, Non-repetitive, less than 2µs 400V T C Module Case Operation Temperature -20°C ≤ T J ≤ 125°C, See Figure 2-20 ~ 100°C T STG Storage Temperature -40 ~ 125°C V ISOIsolation Voltage60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate2500V rmsSymbolParameterCondition Min.Typ.Max.UnitsR th(j-c)Q Junction to Case Thermal ResistanceInverter IGBT part (per 1/6 module) -- 1.63°C/W R th(j-c)FInverter FWD part (per 1/6 module)-- 2.55°C/WDevice MarkingDevicePackageReel SizeTape WidthQuantityFSBB20CH60FFSBB20CH60FSPM27CA--10Note:4. Short-circuit current protection is functioning only at the low-sides.5. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation : C FOD = 18.3 x 10-6 x t FOD [F]Recommended Operating Conditions∆TSDOver-temperature protec-tion hysterisis Temperature at LVIC -18-°C UV CCD Supply Circuit Under-Voltage ProtectionDetection Level 10.711.913.0V UV CCR Reset Level 11.212.413.2V UV BSD Detection Level 10.111.312.5V UV BSR Reset Level10.511.712.9V t FOD Fault-out Pulse Width C FOD = 33nF (Note 5)1.0 1.8-ms V IN(ON)ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL),IN (VL), IN (WL) - COM3.0--V V IN(OFF)OFF Threshold Voltage--0.8VSymbolParameterConditionsValueUnitsMin.Typ.Max.V PN Supply Voltage Applied between P - N U , N V , N W-300400V V CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH),V CC(L) - COM13.51516.5V V BSHigh-side Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V),V B(W) - V S(W)13.01518.5V dV CC /dt, dV BS /dt Control supply variation -1-1V/µst dead Blanking Time for Preventing Arm-short For Each Input Signal 2.5--µsf PWM PWM Input Signal-20°C ≤ T C ≤ 100°C, -20°C ≤ T J ≤ 125°C --20kHz V SENVoltage for Current SensingApplied between N U , N V , N W - COM (Including surge voltage)-44VRev. I19TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™μSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic ®TINYOPTO™TruTranslation™UHC™UniFET™UltraFET ®VCX™Wire™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。

FSBS10CH60中文资料

FSBS10CH60 Smart Power Module44mm26.8mmFigure 1.FSBS10CH60 Smart Power ModuleFSBS10CH60 Smart Power Module Pin DescriptionsPin Number Pin Name Pin Description1V CC(L)Low-side Common Bias Voltage for IC and IGBTs Driving2COM Common Supply Ground3IN(UL)Signal Input for Low-side U Phase4IN(VL)Signal Input for Low-side V Phase5IN(WL)Signal Input for Low-side W Phase6V FO Fault Output7C FOD Capacitor for Fault Output Duration Time Selection8C SC Capacitor (Low-pass Filter) for Short-Current Detection Input9IN(UH)Signal Input for High-side U Phase10V CC(UH)High-side Bias Voltage for U Phase IC11V B(U)High-side Bias Voltage for U Phase IGBT Driving12V S(U)High-side Bias Voltage Ground for U Phase IGBT Driving13IN(VH)Signal Input for High-side V Phase14V CC(VH)High-side Bias Voltage for V Phase IC15V B(V)High-side Bias Voltage for V Phase IGBT Driving16V S(V)High-side Bias Voltage Ground for V Phase IGBT Driving17IN(WH)Signal Input for High-side W Phase18V CC(WH)High-side Bias Voltage for W Phase IC19V B(W)High-side Bias Voltage for W Phase IGBT Driving20V S(W)High-side Bias Voltage Ground for W Phase IGBT Driving21N U Negative DC–Link Input for U Phase22N V Negative DC–Link Input for V Phase23N W Negative DC–Link Input for W Phase24U Output for U Phase25V Output for V Phase26W Output for W Phase27P Positive DC–Link InputFSBS10CH60 Smart Power ModuleControl Part Total System Thermal ResistanceNote:2. For the measurement point of case temperature(T C ), please refer to Figure 2.SymbolParameterConditionsRatingUnitsV CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH), V CC(L) -COM20V V BS High-side Control Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V), V B(W) -V S(W)20V V IN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL),IN (WL) - COM-0.3~17V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC +0.3V I FO Fault Output CurrentSink Current at V FO Pin5mA V SCCurrent Sensing Input Voltage Applied between C SC - COM-0.3~V CC +0.3VSymbolParameterConditionsRatingUnitsV PN(PROT)Self Protection Supply Voltage Limit (Short Circuit Protection Capability)V CC = V BS = 13.5 ~ 16.5VT J = 125°C, Non-repetitive, less than 2µs 400V T C Module Case Operation Temperature -20°C ≤ T J ≤ 125°C, See Figure 2-20 ~ 100°C T STG Storage Temperature -40 ~ 125°C V ISOIsolation Voltage60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate2500V rmsSymbolParameterConditionsMin.Typ.Max.UnitsR th(j-c)Q Junction to Case Thermal ResistanceInverter IGBT part (per 1/6 module) -- 3.7°C/W R th(j-c)FInverter FWD part (per 1/6 module)-- 4.7°C/WNote:4. Short-circuit current protection is functioning only at the low-sides.5. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation : C FOD = 18.3 x 10-6 x t FOD [F]Recommended Operating ConditionsUV CCR Reset Level 11.212.413.2V UV BSD Detection Level 10.111.312.5V UV BSR Reset Level10.511.712.9V t FOD Fault-out Pulse Width C FOD = 33nF (Note 5)1.0 1.8-ms V IN(ON)ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL),IN (VL), IN (WL) - COM3.0--V V IN(OFF)OFF Threshold Voltage--0.8VSymbolParameterConditionsValueUnitsMin.Typ.Max.V PN Supply Voltage Applied between P - N U , N V , N W-300400V V CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH),V CC(L) - COM13.51516.5V V BSHigh-side Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V),V B(W) - V S(W)13.01518.5V DV CC /Dt, DV BS /Dt Control supply variation -1-1V/µst dead Blanking Time for Preventing Arm-short For Each Input Signal 2.0--µsf PWM PWM Input Signal-20°C ≤ T C ≤ 100°C, -20°C ≤ T J ≤ 125°C --20kHz V SENVoltage for Current SensingApplied between N U , N V , N W - COM (Including surge voltage)-44VFSBS10CH60 Smart Power ModuleFSBS10CH60 Smart Power ModuleFSBS10CH60 Smart Power ModuleTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FSBS10CH60 Smart Power ModuleDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I15。

“smartpower”的由来,内涵与译法_汉译

“smartpower”的由来，内涵与译法_汉译论文导读:：继而产生了“smartpower”这一概念。

的内涵。

其汉译可谓五花八门。

论文关键词：smartpower，起源，内涵，汉译一．引言2009年1月13日，在美国参议院外交关系委员会（the Senate ForeignRelations Committee) 举行的国务卿提名（Secretaryof State-nominee）审议听证会上，希拉里.克林顿指出：我们的目标必须要实现。

即便处于最佳状况，我们也无法解决所有问题，或者说满足全球的所有需求。

我们的时间有限，资金有限，人力有限，何况现在我们的经济下滑，赤子不断增加，因而状况并非最好。

同时，希拉里认为：布什政府过去过分依赖军事力量，而对意识形态（ideology）和实用主义（pragmatism）战略重视不足。

她称：单靠美国无法解决中东这样热点（hot spot）地区存在的问题，单靠美国也无法解决反恐，气候变暖和全球性金融危机等问题，主张美国今后在外交中应当使用“smart power”并系统阐述了“smart power”战略。

如今，“smart power”这一词眼已经一跃成为世界关注的焦点词汇之一，我国对“smart power”这一外交术语也格外关注，其汉译可谓五花八门。

在网上搜寻一下会发现有多种翻译：巧实力，精明实力，智慧力量，灵巧力，灵巧实力，智慧实力，睿智力量，巧劲。

二汉译，“smart power”概念的来龙去脉是谁最先提出这一概念的？根据2009年2月14日美国《外交政策》刊登的文章The Origins of “Smart Power”一文，此概念并非希拉里首创，而是华盛顿智库（D.C. think tank）的国际战略研究中心于两年前提出来的。

然而，曾担任美国国防部国际安全事务助理副部长，美国国家情报委员会主任，美国国务院负责安全，援助，科学和技术事务的副国务卿帮办，哈佛大学肯尼迪政府学院院长以及“soft power”概念的首创者小约瑟夫.S.奈伊（JosephS.Nye.Jr）宣称此概念应归功于自己，因此此概念是由其提出的“soft power”概念发展起来的。

FSBS15CH60中文资料

FSBS15CH60 Smart Power Module44mm26.8mmFigure 1.FSBS15CH60 Smart Power ModuleFSBS15CH60 Smart Power Module Pin DescriptionsPin Number Pin Name Pin Description1V CC(L)Low-side Common Bias Voltage for IC and IGBTs Driving2COM Common Supply Ground3IN(UL)Signal Input for Low-side U Phase4IN(VL)Signal Input for Low-side V Phase5IN(WL)Signal Input for Low-side W Phase6V FO Fault Output7C FOD Capacitor for Fault Output Duration Time Selection8C SC Capacitor (Low-pass Filter) for Short-Current Detection Input9IN(UH)Signal Input for High-side U Phase10V CC(UH)High-side Bias Voltage for U Phase IC11V B(U)High-side Bias Voltage for U Phase IGBT Driving12V S(U)High-side Bias Voltage Ground for U Phase IGBT Driving13IN(VH)Signal Input for High-side V Phase14V CC(VH)High-side Bias Voltage for V Phase IC15V B(V)High-side Bias Voltage for V Phase IGBT Driving16V S(V)High-side Bias Voltage Ground for V Phase IGBT Driving17IN(WH)Signal Input for High-side W Phase18V CC(WH)High-side Bias Voltage for W Phase IC19V B(W)High-side Bias Voltage for W Phase IGBT Driving20V S(W)High-side Bias Voltage Ground for W Phase IGBT Driving21N U Negative DC–Link Input for U Phase22N V Negative DC–Link Input for V Phase23N W Negative DC–Link Input for W Phase24U Output for U Phase25V Output for V Phase26W Output for W Phase27P Positive DC–Link InputFSBS15CH60 Smart Power ModuleControl Part Total System Thermal ResistanceNote:2. For the measurement point of case temperature(T C ), please refer to Figure 2.SymbolParameterConditionsRatingUnitsV CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH), V CC(L) -COM20V V BS High-side Control Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V), V B(W) -V S(W)20V V IN Input Signal Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL), IN (VL),IN (WL) - COM-0.3~17V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3~V CC +0.3V I FO Fault Output CurrentSink Current at V FO Pin5mA V SCCurrent Sensing Input Voltage Applied between C SC - COM-0.3~V CC +0.3VSymbolParameterConditionsRatingUnitsV PN(PROT)Self Protection Supply Voltage Limit (Short Circuit Protection Capability)V CC = V BS = 13.5 ~ 16.5VT J = 125°C, Non-repetitive, less than 2µs 400V T C Module Case Operation Temperature -20°C ≤ T J ≤ 125°C, See Figure 2-20 ~ 100°C T STG Storage Temperature -40 ~ 125°C V ISOIsolation Voltage60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate2500V rmsSymbolParameterConditiosMin.Typ.Max.UnitsR th(j-c)Q Junction to Case Thermal ResistanceInverter IGBT part (per 1/6 module) -- 3.1°C/W R th(j-c)FInverter FWD part (per 1/6 module)--3.6°C/WNote:4. Short-circuit current protection is functioning only at the low-sides.5. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation : C FOD = 18.3 x 10-6 x t FOD [F]Recommended Operating ConditionsUV CCR Reset Level 11.212.413.2V UV BSD Detection Level 10.111.312.5V UV BSR Reset Level10.511.712.9V t FOD Fault-out Pulse Width C FOD = 33nF (Note 5)1.0 1.8-ms V IN(ON)ON Threshold Voltage Applied between IN (UH), IN (VH), IN (WH), IN (UL),IN (VL), IN (WL) - COM3.0--V V IN(OFF)OFF Threshold Voltage--0.8VSymbolParameterConditionsValueUnitsMin.Typ.Max.V PN Supply Voltage Applied between P - N U , N V , N W-300400V V CC Control Supply Voltage Applied between V CC(UH), V CC(VH), V CC(WH),V CC(L) - COM13.51516.5V V BSHigh-side Bias VoltageApplied between V B(U) - V S(U), V B(V) - V S(V),V B(W) - V S(W)13.01518.5V DV CC /Dt, DV BS /Dt Control supply variation -1-1V/us t dead Blanking Time for Preventing Arm-short For Each Input Signal 2.0--us f PWM PWM Input Signal-20°C ≤ T C ≤ 100°C, -20°C ≤ T J ≤ 125°C --20kHz V SENVoltage for Current SensingApplied between N U , N V , N W - COM (Including surge voltage)-44VFSBS15CH60 Smart Power ModuleFSBS15CH60 Smart Power ModuleFSBS15CH60 Smart Power ModuleTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FSBS15CH60 Smart Power ModuleDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I15。

巧实力

“巧实力”战略与奥巴马新外交作者：钟龙彪文章来源：《现代国际关系》2009年第5期内容提要：“巧实力”战略是关于力量和如何运用力量的战略。

“巧实力”战略的涵义，简单地说，就是为了实现美国领导世界的目标，美国政府必须软硬兼施，文武并用，硬实力和软实力，两手都要用，两手都要硬，不能顾此失彼，只偏重硬实力，忽视软实力。

具体内容包括四个方面：第一，提供全球福利是关键；第二，美国应输出希望而不是恐惧；第三，巩固传统盟友，赢得新伙伴；第四，从国内改革做起。

“巧实力”战略是针对美国在世界上的影响正在下降、新国际挑战、美国力量的优势和不足、一些新兴国家正在崛起的现实，在总结冷战经验基础上提出的。

从奥巴马正式就职以来的美国外交政策宣示和已经采取的各种外交措施看，“巧实力”战略对奥巴马政府的外交政策的影响是非常显著的。

不过，奥巴马的“巧实力”外交目前只能说初露端倪，尚未定型。

今后如何发展，仍然有待观察。

关键词：巧实力战略奥巴马外交“巧实力”（smart power）最初是由美国学者提出的概念。

由于切中布什政府时期的外交政策时弊，逐渐为美国学界、智库和政府认可。

2009年1月13日，获奥巴马提名出任国务卿的希拉里·克林顿(Hillary Clinton)在国会参院外交委员会就其提名举行的听证会上说，美国面临的现有安全威胁要求新一届政府必须诉诸巧实力，动用一切可以动用的手段，包括外交、经济、军事、政治、法律和文化等领域的可行手段，团结一切可-以团结的力量，巩固原有联盟，形成新的联盟，以便打开美国外交的新局面。

[1]希拉里有关巧实力的表态在美国国内和国际社会迅速引起关注。

有人认为，这一表态显示出奥巴马政府受当前国内、国际形势影响，吸取布什政府信奉硬实力外交的教训，将巧实力列为指导外交实践的重要理念，意在为重振美国经济创造良好的国际环境，并修复大国形象，捍卫全球霸权。

也有人认为，巧实力并非奥巴马政府的专利，如同新孤立主义、新干涉主义、新保守主义等一样，它不过是美国政府实用主义外交的一张新标签而已。

Emerson

Product Data SheetDecember 201800813-0100-4701 Rev CA Emerson™ Wireless SmartPower™ Solutions⏹Predictable life specified under installed conditions⏹Robust design for use in harsh environments⏹Low Level alerts for easy maintenance⏹Keyed connection for easy and fail-safe replacementSmartPower Solutions December 2018IEC 62591 (Wireless HART)... the Industry StandardSelf-organizing, adaptive mesh routing⏹Know you are backed by Emerson’s proven experience inWireless field instrumentation and expert technical support⏹The self-organizing, self-healing network manages multiplecommunication paths for any given device. If an obstruction isintroduced into the network, data will continue to flowbecause the device already has other established paths.Reliable wireless architecture⏹Standard IEEE 802.15.4 radios⏹2.4 GHz ISM band⏹Time synchronized channel hopping⏹Wireless HART® technology delivers high reliability inchallenging radio environmentLayered security keeps your network safe⏹Ensures data transmissions are received only by the wirelessGateway⏹Network devices implement industry standard encryption,authentication, verification, anti-jamming, and keymanagement.⏹Third party security verification including Achilles andFIPS197- user based login and enforced password strength.Password strength monitoring, user based log in, passwordreset requirements, automatic lockout, password expirationrequirements. Based on guidelines from ISA99.03.03standard approved level two.Seamless integration to existing hosts⏹Native integration into DeltaV™ and Ovation™ is transparentand seamless⏹Gateways interface with existing host systems using industrystandard protocols including OPC, Modbus® TCP/IP, ModbusRTU, and EtherNet/IP™SmartPower solutions⏹Optimized Emerson instrumentation, both hardware andsoftware, to extend power module life⏹SmartPower technologies enable predictable power lifeContentsIEC 62591 (WirelessHART)... the Industry Standard . . . 2 SmartPower Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Product Certifications – 701P SmartPower Solutions . . . 6 Dimensional Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8SmartPower Solutions December 2018SmartPower SolutionsBlack power module⏹Hazardous Area Certifications: FM, CSA, ATEX, IECEx, EAC ⏹Designed for use with:Rosemount™ 3051S Wireless Pressure TransmitterRosemount 3051SMV Wireless Pressure TransmitterRosemount 648 Wireless Temperature TransmitterRosemount 848T Wireless Temperature TransmitterRosemount 3308A Wireless Guided Wave RadarRosemount 2160 Wireless Level SwitchRosemount 928 Wireless Gas MonitorRosemount 702 Wireless Discrete TransmitterRosemount 702 Wireless Plunger Arrival TransmitterRosemount 705 Wireless Totalizing TransmitterRoxar CorrLog Wireless Corrosion TransmitterRoxar SandLog Wireless Sand/Erosion Transmitter Green power module⏹Hazardous Area Certifications: FM, CSA, ATEX, IECEx, EAC ⏹Designed for use with:Rosemount 708 Wireless Acoustic TransmitterRosemount 3051 Wireless Pressure TransmitterRosemount 2051 Wireless Pressure TransmitterRosemount 248 Wireless Temperature Transmitter(Polymer)Alternate power optionsSmartPower Solutions Blue Power Module⏹Recommended for energy intensive applications⏹Double the lifetime, up to 10 years⏹Compatible with most products using the Black Power Module⏹Extended cover required⏹Reference Blue Power Module datasheet for approved devices Energy harvesting options⏹Perpetuum Intelligent Power Module (IPM) accepts harvested energy and delivers to transmitter⏹Perpetua® Power Pucks convert heat into thermoelectric energy and send to IPM⏹Compatible with most products using the Black Power Module⏹Contact Emerson representative for approved devicesSmartPower Solutions December 2018 Ordering InformationEmerson SmartPower Solutions FeaturesIntrinsically safe power solution⏹SmartPower Modules can be changed in hazardous areas⏹No need to remove transmitter from process to change power modulePredictable life⏹Life expectancies specified under installed conditions⏹Up to 10-year life depending on update rate Easy maintenance⏹Low level alerts for easy planning of replacements⏹Keyed connections for easy replacement and fail-safe connectionSafe robust design⏹Short circuit protection⏹No special training required⏹Designed for harsh environmentsSpecification and selection of product materials, options, or components must be made by the purchaser of the equipment.See page5 for more information on material selection.Table 1. SmartPower Solutions Ordering InformationThe starred offerings (★) represent the most common options and should be selected for best delivery. The non-starred offerings are subject to additional delivery lead time.Model Product description701P SmartPower OptionsSmartPower typeBK Black Power Module★GN Green Power Module★CertificationKF FM, CSA, ATEX, IECEx, and EAC Intrinsically Safe★Typical model number: 701PBKKFSmartPower Solutions December 2018SpecificationsFunctional specificationsLife expectancyUp to 10-year life at one minute update rate. See Table 2 on page 5 for more information.Humidity limits0–100 percent relative humidityPhysical specificationsMaterial selectionEmerson provides a variety of Rosemount product with various product options and configurations including materials of construction that can be expected to perform well in a wide range of applications. The Rosemount product information presented is intended as a guide for the purchaser to make an appropriate selection for the application. It is the purchaser’s sole responsibility to make a careful analysis of all process parameters (such as all chemical components, temperature, pressure, flow rate, abrasives, contaminants, etc.), when specifying product, materials, options, and components for the particular application. Emerson is not in a position to evaluate or guarantee the compatibility of the process fluid or other process parameters with the product, options, configuration or materials of construction selected.Electrical connectionsEmerson SmartPower solutions were designed for use with various Emerson Wireless devices, listed on page3.Rated voltageBlack Power Module: 7.2 VGreen Power Module: 3.6 VMaterials of constructionPrimary Lithium-thionyl chloride with a polybutylene terephthalate (PBT) enclosure.WeightBlack Power Module -0.50 lb (230 g)Green Power Module - 0.34 lb (155 g)Performance specifications Electromagnetic compatibility (EMC)All models:Meets all relevant requirements of EN 61326-1; 2006; EN 61326-2-3; 2006.Vibration effectNo effect when tested per the requirements of IEC60770-1: High Vibration Level - field or pipeline (10–60 Hz 0.21 mm displacement peak amplitude/60–2000 Hz 3g).Temperature limitsPower module lifePower module life in a given wireless transmitter is mainly a function of the wireless update rate. Faster wireless updates lead to lower power module life. Power module life is also impacted by extreme temperature service and wireless network conditions. Power module storage conditions should be temperature controlled.Table 2. Power Module Life EstimatesAssumptions⏹Three network descendants⏹70 °F ambient temperature⏹10 years is shelf life of lithium cell⏹±10% capacity for temperature and network variationNoteNR: this update rate not recommended for this productTo better estimate power module life for a wireless transmitter in your network, visit the on-line power module life estimator. Operating limit Storage limit–40 to 185 °F–40 to 85 °C–40 to 185 °F–40 to 85 °CPower module life estimates in yearsUpdate1sec2sec4sec16sec60sec300sec20min40min60min Black Power Module3051S0.6 1.3 2.2 5.810.010.010.010.010.0 3051SMV0.40.7 1.3 3.5 6.89.410.010.010.0 6480.90.7 2.8 6.910.010.010.010.010.0 848T NR NR0.7 2.4 6.310.010.010.010.0 3308A NR NR 1.5 4.710.010.010.010.010.0 2160 1.2 2.1 3.2 6.910.010.010.010.010.0 928 1.5 2.1 2.9 3.0 3.2 3.2 3.2 3.2 3.2 702 Discrete 1.5 2.7 4.18.810.010.010.010.010.0 702 Plunger0.70.9 1.1 1.2 1.2 1.2 1.2 1.2 1.2 705 1.5 2.7 4.18.810.010.010.010.010.0 CorrLog NR NR NR NR NR NR 1.6 2.6 3.7 SandLog NR NR NR NR NR NR 1.6 2.6 3.7 CSI 9420Not recommended for Black Power Module. See productdocumentation for Blue Power Module.Green Power Module708 1.2 2.3 3.88.410.010.010.010.010.0 30510.6 1.3 2.2 5.810.010.010.010.010.0 20510.6 1.3 2.2 5.810.010.010.010.010.0 2480.9 1.7 2.8 6.910.010.010.010.010.0SmartPower Solutions December 2018 Product Certifications – 701P SmartPower SolutionsRev 2.1European Directive InformationA copy of the EC Declaration of Conformity can be found at the end of the Quick Start Guide. The most recent revision of the EC Declaration of Conformity can be found at/Rosemount.Ordinary Location Certification for FM ApprovalsAs standard, the transmitter has been examined and tested to determine that the design meets the basic electrical, mechanical, and fire protection requirements by FM Approvals, a nationally recognized test laboratory (NRTL) as accredited by the Federal Occupational Safety and Health Administration (OSHA).Installing in North AmericaThe US National Electrical Code® (NEC) and the Canadian Electrical Code (CEC) permit the use of Division marked equipment in Zones and Zone marked equipment in Divisions. The markings must be suitable for the area classification, gas, and temperature class. This information is clearly defined in the respective codes.USAKF FM Intrinsic Safety (IS)Certificate: 3042016Standards: FM Class 3600 – 1998, FM Class 3610 – 2010,FM Class 3810 – 2005Markings: IS CL I, DIV 1, GP A, B, C, D; CL II, DIV 1, GP E, F,G; Class III; Class 1, Zone 0 AEx ia IIC T4; (–40 °C≤ T a≤ +70 °C)(See Table 3 or Table 4 for parameters) Special Condition for Safe Use (X):1.Replacement of power module, see instructions for finalproduct.CanadaKF CSA Intrinsically SafeCertificate: 2430393Standards: CAN/CSA C22.2 No. 0-M91,CSA Std C22.2 No.157-92Markings: Intrinsically Safe Class I, Division 1, Groups A, B,C, and D T3C (Ta ≤ +70 °C) Warning – refer to|QSG 825-0100-4701 for Safe I.S. Use(See Table 3 or Table 4 for parameters)Specific Condition for Safe Use (X):1.The power modules are certified as components for use inintrinsically safe products where the suitability/combination of use in the final assembly shall be subjected to CSA acceptance. The final assembly must incorporate all protection features necessary for batteries in accordancewith applicable standards of the final intrinsically safeapplication.EuropeKF ATEX Intrinsic SafetyCertificate: Baseefa11ATEX0042XStandards: EN 60079-0: 2012+A11:2013,Markings: II 1G Ex ia IIC T4 Ga, T4(–55 °C ≤ T a≤+70 °C)II 1G Ex ia IIC T5 Ga, T5(–55 °C ≤ T a≤ +40 °C)Table 3 or Table 4 for parameters) Special Condition for Safe Use (X):1.The plastic enclosure of the Model 701P SmartPowerPower Modules may constitute a potential electrostaticignition risk and caution should be used when beinghandled.NoteThis condition of use does not apply after a Power Module is installed within a wireless transmitter enclosure.InternationalKF IECEx Intrinsic SafetyCertificate: IECEx BAS 11.0026XStandards: IEC 60079-0: 2011, IEC 60079-11: 2011Markings: Ex ia IIC T4/T5 Ga T4(–55 °C ≤ T a ≤ +70 °C),T5(–55 °C ≤ T a≤ +40 °C)Special Condition for Safe Use (X):1.The plastic enclosure of the Model 701P SmartPowerPower Modules may constitute a potential electrostaticignition risk and caution should be used when beinghandled.NoteThis condition of use does not apply after a Power Module is installed within a wireless transmitter enclosure.EAC - Belarus, Kazakhstan, RussiaKF Technical Regulation Customs Union (EAC) Intrinsic Safety Certificate: TC RU C-US.MIO62.B.04747Markings: 0Ex ia IIC T4/T5 Ga X T4 (-55 °C ≤ T a ≤ +70 °C)T5 (–55 °C ≤ T a ≤ +40 °C)SmartPower SolutionsDecember 2018Safety parametersTable 3. 701PBKKFTable 4. 701PGNKFU o 7.8 V I o 2.16 A P o 0.83 W C o 3.0 μF L o7.6 μHU o 3.9 V I o 2.78 A P o 2.71 W C o 100 μF L o4.6 μHSmartPower Solutions December 2018 Dimensional DrawingsFigure 1. 701PGN Green Power Module3.17(80.38)Dimensions are in inches (millimeters).Figure 2. 701PBK Black Power ModuleSmartPower Solutions December 2018Product Data SheetDecember 2018SmartPower Solutions00813-0100-4701 Rev CAGlobal HeadquartersEmerson Automation Solutions 6021 Innovation Blvd.Shakopee, MN 55379, USA+1 800 999 9307 or +1 952 906 8888+1 952 949 7001***********************North America Regional OfficeEmerson Automation Solutions8200 Market Blvd.Chanhassen, MN 55317, USA+1 800 999 9307 or +1 952 906 8888+1 952 949 7001 *************************Latin America Regional OfficeEmerson Automation Solutions1300 Concord Terrace, Suite 400Sunrise, FL 33323, USA+1 954 846 5030+1 954 846 5121***********************Europe Regional OfficeEmerson Automation Solutions Europe GmbHNeuhofstrasse 19a P.O. Box 1046CH 6340 BaarSwitzerland+41 (0) 41 768 6111+41 (0) 41 768 6300***********************Asia Pacific Regional OfficeEmerson Automation Solutions 1 Pandan CrescentSingapore 128461+65 6777 8211+65 6777 0947********************.comMiddle East and Africa Regional OfficeEmerson Automation Solutions Emerson FZE P.O. Box 17033Jebel Ali Free Zone - South 2Dubai, United Arab Emirates+971 4 8118100+971 4 8865465**********************/company/Emerson-Automation-Solutions/Rosemount_News/Rosemount/user/RosemountMeasurement/+RosemountMeasurementEmerson Terms and Conditions of Sale are available upon request.The Emerson logo is a trademark and service mark of Emerson Electric Co. Rosemount is a mark of one of the Emerson family of companies. All other marks are the property of their respective owners.©2018 Emerson. All rights reserved.。

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collection system , smart metering and
collection terminal equipment.

Company Logo
1
Main Introduction

the development goals of the smart
electricity services specific introduction

Company Logo
1
Main Introduction

Company Logo
2 Power Information Acquisition

Data collection layer is connected to the
different sorts of terminal via different
Company Logo
2 Power Information Acquisition

This consists of the communication
connecting equipment, preceding
communication server, supporting software, communication protocol encryption software .
data storage and back up equipment.

Company Logo
4 Smart System Architecture

The application software should cover
the functions as structured electric power
information sharing platform,
Company Logo
1
Main Introduction

external association, building a support
system, the specific composition of the
various functional and smart power technology for future.
In the layer, the integrated data platform for electric power information will be managed, and connected with external business. It consists of data base server,

Company Logo
3
Communication Network

Company Logo
4 Smart System Architecture

The collected data will be stored
separately in the data management layer.
LOGO
Smart Power
www.
Contents
1
2 3
Main Introduction
Power Information Acquisition Communication Network Smart System Architecture
4
Company Logo
1
Main Introduction
Company Logo
2 Power Information Acquisition

Company Logo
3
Communication Network

communication means the data
communication between the collection
terminal and the system master station. Through the communication, the system master station can establish the relation with the terminals at the customer side,

Company Logo
3
Communica if the electric power customer wants to
use public communication channel for
electric power utilization data collection he has to consider the security, reliability, real time, expendability, and economical situation.
Company Logo
3
Communication Network
and give orders and exchange information,
also collect the customer's electric power
utilization information. Public wireless data transmission network Since the public network was built for the public people to provide communication resource,

Company Logo
4 Smart System Architecture

Company Logo
LOGO

communication channels, and analyze the data according to the regulated communication protocol, monitor the communication quality, manage the
communication recourses.
utilization management, abnormal power utilization analysis, electric quality data statistics, reporting management, failure analysis, value adding services etc.
and analysis of smart electricity services,the system architecture of the smart electricity services, interactive platform for smart electricity services,

We first analysis of the status and role of
the smart electricity in the field of smart
grid; and describes the status and results of the intelligent use of electricity at home. Secondly , the thesis focuses on research smart electricity energy information