4012 CMOS 双4输入与非门

TL F 5940CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND GateMarch 1988CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND GateGeneral DescriptionThese NOR and NAND gates are monolithic complementa-ry MOS (CMOS)integrated circuits The N-and P-channel enhancement mode transistors provide a symmetrical cir-cuit with output swings essentially equal to the supply volt-age This results in high noise immunity over a wide supply voltage range No DC power other than that caused by leak-age current is consumed during static conditions All inputs are protected against static discharge and latching condi-tionsFeaturesY Wide supply voltage range 3 0V to 15V Y Low power10nW (typ )YHigh noise immunity0 45V DD (typ )ApplicationsY Automotive Y Alarm system Y Data terminals Y Industrial controls Y Instrumentation Y Remote metering YMedical ElectronicsYComputersConnection DiagramsCD4002Dual-In-Line PackageTL F 5940–1Top ViewCD4012Dual-In-Line PackageTL F 5940–2Top ViewOrder Number CD4002or CD4012C 1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Note1)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Voltage at Any Pin V SS b0 3V to V DD a0 3V Operating Temperature RangeCD4002M CD4012M b55 C to a125 C CD4002C CD4012C b40 C to a85 C Storage Temperature Range(T S)b65 C to a150 C Power Dissipation(P D)Dual-In-Line700mW Small Outline500mW Operating Range(V DD)V SS a3 0V to V SS a15V Lead Temperature(T L)(Soldering 10seconds)260 CDC Electrical Characteristics CD4002M CD4012MLimitsSymbol Parameter Conditions b55 C a25 C a125 C UnitsMin Max Min Typ Max Min MaxI DD Quiescent V DD e5 0V0 050 0010 053 0m ADevice Current V DD e10V0 10 0010 16m A P D Quiescent Device V DD e5 0V0 250 0050 2515m W Dissipation Package V DD e10V1 00 011 060m W V OL Output Voltage V DD e5 0V V I e V DD I O e0A0 0500 050 05V Low Level V DD e10V V I e V DD I O e0A0 0500 050 05V V OH Output Voltage V DD e5 0V V I e V SS I O e0A4 954 955 04 95V High Level V DD e10V V I e V SS I O e0A9 959 95109 95V V NL Noise Immunity V DD e5 0V V O e3 6V I O e0A1 51 52 251 4V (All Inputs)V DD e10V V O e7 2V I O e0A3 03 04 52 9V V NH Noise Immunity V DD e5 0V V O e0 95V I O e0A1 41 52 251 5V (All Inputs)V DD e10V V O e2 9V I O e0A2 93 04 53 0V I D N Output Drive Current V DD e5 0V V O e0 4V V I e V DD0 50 401 00 28mAN-Channel(4002)V DD e10V V O e0 5V V I e V DD1 10 92 50 65mA (Note2)I D P Output Drive Current V DD e5 0V V O e2 5V V I e V SS b0 62b0 5b2 0b0 35mAP-Channel(4002)V DD e10V V O e9 5V V I e V SS b0 62b0 5b1 0b0 35mA (Note2)I D N Output Drive Current V DD e5 0V V O e0 4V V I e V DD0 310 250 50 175mAN-Channel(4012)V DD e10V V O e0 5V V I e V DD0 630 50 60 35mA (Note2)I D P Output Drive Current V DD e5 0V V O e2 5V V I e V SS b0 31b0 25b0 5b0 175mAP-Channel(4012)V DD e10V V O e9 5V V I e V SS b0 75b0 6b1 2b0 4mA (Note2)I I Input Current10pANote1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed Except for‘‘Operating Temperature Range’’they are not meant to imply that the devices should be operated at these limits The table of‘‘Electrical Characteristics’’provides conditions for actual device operationNote2 I D N and I D P are tested one output at a time2DC Electrical Characteristics CD4002C CD4012CLimitsSymbol Parameter Conditions b55 C a25 C a85 C UnitsMin Max Min Typ Max Min MaxI DD Quiescent V DD e5 0V0 50 0050 515m ADevice Current V DD e10V5 00 0055 030m A P D Quiescent Device V DD e5 0V2 50 0252 575m W Dissipation Package V DD e10V500 0550300m W V OL Output Voltage V DD e5 0V V I e V DD I O e0A0 0500 050 05V Low Level V DD e10V V I e V DD I O e0A0 0500 050 05V V OH Output Voltage V DD e5 0V V I e V SS I O e0A4 954 955 04 95V High Level V DD e10V V I e V SS I O e0A9 959 95109 95V V NL Noise Immunity V DD e5 0V V O t3 6V I O e0A1 51 52 251 4V (All Inputs)V DD e10V V O t7 2V I O e0A3 03 04 52 9V V NH Noise Immunity V DD e5 0V V O s0 95V I O e0A1 41 52 251 5V (All Inputs)V DD e10V V O s2 9V I O e0A2 93 04 53 0V I D N Output Drive Current V DD e5 0V V O e0 4V V I e V DD0 350 31 00 24mAN-Channel(4002)V DD e10V V O e0 5V V I e V DD0 720 62 50 48mA (Note2)I D N Output Drive Current V DD e5 0V V O e0 4V V I e V DD0 1450 120 50 095mAN-Channel(4012)V DD e10V V O e0 5V V I e V DD0 30 250 60 2mA (Note2)I D P Output Drive Current V DD e5 0V V O e2 5V V I e V SS b0 35b0 3b2 0b0 24mAP-Channel(4002)V DD e10V V O e9 5V V I e V SS b0 3b0 25b1 0b0 2mA (Note2)I D P Output Drive Current V DD e5 0V V O e2 5V V I e V SS b0 145b0 12b0 5b0 095mAP-Channel(4012)V DD e10V V O e9 5V V I e V SS b0 35b0 3b1 2b0 24mA (Note2)I I Input Current10pANote1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed Except for‘‘Operating Temperature Range’’they are not meant to imply that the devices should be operated at these limits The table of‘‘Electrical Characteristics’’provides conditions for actual device operationNote2 I D N and I D P are tested one output at a time3AC Electrical Characteristics T A e25 C C L e15pF and input rise and fall times e20ns Typical temperature coefficient for all values of V DD e0 3% CSymbol Parameter Conditions Min Typ Max Units CD4002Mt PHL Propagation Delay Time V DD e5 0V3550ns High to Low Level V DD e10V2540ns t PLH Propagation Delay Time V DD e5 0V3550ns Low to High Level V DD e10V2540ns t THL Transition Time High V DD e5 0V65175ns to Low Level V DD e10V3575ns t TLH Transition Time Low V DD e5 0V65125ns to High Level V DD e10V3570nsC IN Input Capacitance Any Input5 0pFCD4002Ct PHL Propagation Delay Time V DD e5 0V35120ns High to Low Level V DD e10V2565ns T PLH Propagation Delay Time V DD e5 0V3580ns Low to High Level V DD e10V2555ns t THL Transition Time High V DD e5 0V65300ns to Low Level V DD e10V35125ns t TLH Transition Time Low V DD e5 0V65200ns to High Level V DD e10V35115nsC IN Input Capacitance Any Input5 0pFAC Parameters are guaranteed by DC correlated testingAC Electrical Characteristics T A e25 C C L e15pF and input rise and fall times e20ns Typical temperature coefficient for all values of V DD e0 3% CSymbol Parameter Conditions Min Typ Max Units CD4012Mt PHL Propagation Delay Time V DD e5 0V5075ns High to Low Level V DD e10V2540ns t PLH Propagation Delay Time V DD e5 0V5075ns Low to High Level V DD e10V2540ns t THL Transition Time High V DD e5 0V75125ns to Low Level V DD e10V5075ns t TLH Transition Time Low V DD e5 0V75100ns to High Level V DD e10V4060nsC IN Input Capacitance Any Input5 0pFCD4012Ct PHL Propagation Delay Time V DD e5 0V50100ns High to Low Level V DD e10V2550ns T PLH Propagation Delay Time V DD e5 0V50100ns Low to High Level V DD e10V2550ns t THL Transition Time High V DD e5 0V75150ns to Low Level V DD e10V50100ns t TLH Transition Time Low V DD e5 0V75125ns to High Level V DD e10V4075nsC IN Input Capacitance Any Input5 0pFAC Parameters are guaranteed by DC correlated testingNote1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed Except for‘‘Operating Temperature Range’’they are not meant to imply that the devices should be operated at these limits The table of‘‘Electrical Characteristics’’provides conditions for actual device operation4Physical Dimensions inches(millimeters)Ceramic Dual-In-Line Package(J)Order Number CD4002MJ CD4002CJ CD4012MJ or CD4012CJNS Package Number J14A5C D 4002M C D 4002C D u a l 4-I n p u t N O R G a t e C D 4012M C D 4012C D u a l 4-I n p u t N A N D G a t ePhysical Dimensions inches (millimeters)(Continued)Molded Dual-In-Line Package (N)Order Number CD4002MN CD4002CN CD4012MN or CD4012CNNS Package Number N14ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。