SA36-11EWA, 规格书,Datasheet 资料
雷泰红外说明书
技术参数光学参数*?? 95%能量时，CF=近焦，SF=标准焦距??? 最小焦距时的最小光点尺寸*? 最小的光点尺寸直径=最小焦距/最小的D:S 一般参数电气参数仪器特点Marathon FA?红外测温仪技术参数：1、温度测量范围: 250℃到 3000℃(482°F to 5432°F)2、光学分辨率最高可达 100:13、特别适用于现场安装空间狭小的安装条件4、精度高，测量值的± 0.3%5、更快速响应时间 10 毫秒，可选到10秒6、提供模拟量和数字量输出技术参数Marathon FA 红外测温仪介绍雷泰马拉松 FA 系列红外测温仪使用光纤技术可克服测量过程中各种极端的环境条件。
FA 系列红外测温仪由电子盒和光纤探头、光缆组成，探测器和信号处理部分集成在一电子盒中，此电子盒可远距离放置，光纤探头和光缆可安装在强电磁场中的环境中，并且可耐的最高环温达200℃。
雷泰马拉松 FA 系列光纤测温仪的测温范围为250℃到3000℃(482°F to 5432°F) ，FA 光纤探头由耐用光缆将光学探头连接到电路盒上，电路盒包括：探测器、电子线路、内置用户接口、LED 显示及连接电缆的接线端子。
FA1 和FA2 系列尤其适用于目标不能接近的、恶劣的工业环境，安装空间狭小的现场测温应用。
雷泰 FA 系列单色光纤式测温仪的固定焦距的光学探头包括一个小的不锈钢圆柱形外壳和透镜，其可承受的环境温度高达200℃，并且符合NEMA-4的标准。
雷泰 FA 系列的光纤探头可装一空气吹扫器以防止透镜被污染，光缆由金属套保护，并由VITON 保护套所密封，以防止水和油的流入，这种装配可使光缆以很小的半径弯曲以便其方便地穿过狭小的空间。
雷泰 FA 系列单色光纤式测温仪还提供可在PC 上使用的WINDOWS下的马拉松软件，以实现远程进行参数设置、数据读取、数据的图形显示及RS485的多点网络配置。
SA36CA,TVS瞬变抑制二极管中文资料
POWER: 500 Wa t VOLTAGE RANGE: 5.0- 17 0 VAXIAL LEADED TRANSIENT VOLTAGE SUPPRESSORS DIODESA5.0A(CA) - SA170A(CA)Glass Passivated Die ConstructionUni- and Bi-Directional Versions AvailableExcellentClamping Capability Fast Response TimePlastic Case Material has UL FlammabilityMechanical DataCase: JEDEC DO-15 Low Profile Molded Plastic Terminals: Axial Leads, Solderable per MIL-STD-750, Method 2026Polarity: Cathode Band or Cathode Notch Marking:Unidirectional – Device Code and Cathode Band Bidirectional – Device Code Only Weight: 0.40 grams (approx.)FeaturesMaximum Ratings and Electrical Characteristics@T A =25°C unless otherwise specifiedCharacteristicSymbol Value Unit Peak Pulse Power Dissipation at T A = 25°C (Note 1, 2, 5) Figure 3P PPM 500 MinimumW Peak Forward Surge Current (Note 3)I FSM 70A Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 1I PPM See Table 1A Steady State Power Dissipation (Note 2, 4)P M(AV) 1.0W Operating and Storage Temperature RangeT j , T STG-65 to +175°CNote: 1. Non-repetitive current pulse, per Figure 1 and derated above T A = 25°C per Figure 4.2. Mounted on 40mm 2 copper pad.3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum.4. Lead temperature at 75°C = T L .5. Peak pulse power waveform is 10/1000µS.!!!!!!!!!!29.586.073.771.266.362.758.955.350.0 52.849.144.240.636.834.431.926.925.523.321.720.519.217.916.5 15.37.786.676.40 (uA)R RMW RMW@V leakage Reverse CurrentPulse Peak (A)Vc(V)(mA)BR MAX CurrentMax.BR MIN @I Min.Volgtage Breakdown (V)(BI)(Uni)Voltage Stand-Off Reverse Maximum Clamping V T PP(V)V @I Volgtage Breakdown Test (V)V T Volgtage @I PP SA6.0A SA6.0CA 6.0 7.67 10 10.3 49.5 600.0 SA5.0A SA5.0CA 5.0 7.25 10 9.2 55.4 600.0 SA6.5A SA6.5CA 6.5 7.22 8.30 10 11.2 45.5 400.0 SA7.0A SA7.0CA 7.0 8.95 10 12.0 42.5 150.0 SA7.5A SA7.5CA 7.5 8.33 9.58 1.0 12.9 39.5 50.0 SA8.0A SA8.0CA 8.0 8.89 10.23 1.0 13.6 37.5 25.0 SA8.5A SA8.5CA 8.5 9.44 10.82 1.0 14.4 35.4 10.0 SA9.0A SA9.0CA 9.0 10.0 11.5 1.0 15.4 33.1 5.0 SA10A SA10CA 10 11.1 12.8 1.0 17.0 30.0 3.0SA11A SA11CA 11 12.2 14.0 1.0 18.2 28.0 3.0SA12A SA12CA 12 13.3 1.0 19.9 25.6 3.0SA13A SA13CA 13 14.4 1.0 21.5 23.7 3.0SA14A SA14CA 14 15.6 1.0 23.2 22.0 3.0SA15A SA15CA 15 16.7 1.0 24.4 20.9 3.0SA16A SA16CA 16 17.8 1.0 26.0 19.6 3.0SA17A SA17CA 17 18.9 1.0 27.6 18.5 3.0SA18A SA18CA 18 20.0 1.0 29.2 17.5 3.0SA20A SA20CA 20 22.2 1.0 32.4 15.7 3.0SA22A SA22CA 22 24.4 1.0 35.5 14.4 3.0 SA24A SA24CA 24 26.7 1.0 38.9 13.1 3.0 SA26A SA26CA 26 28.9 1.0 42.1 12.1 3.0 SA28A SA28CA 28 31.1 1.0 45.4 11.2 3.0SA30A SA30CA30 33.3 1.0 48.4 10.5 3.0 SA33A SA33CA 33 36.7 1.0 53.3 9.6 3.0 SA36A SA36CA 36 40.0 1.0 58.1 8.8 3.0 SA40A SA40CA 40 44.4 1.0 64.5 7.9 3.0 SA43A SA43CA 43 47.8 1.0 69.4 7.3 3.0 SA45A SA45CA 45 1.0 72.7 7.0 3.0 SA48A SA48CA 48 53.3 1.0 77.4 6.6 3.0 SA51A SA51CA 51 56.7 1.0 82.4 6.2 3.0SA54ASA54CA 54 60.0 1.0 87.1 5.9 3.0 SA58A SA58CA 58 64.4 1.0 93.6 5.4 3.0 SA60A SA60CA 60 66.7 1.0 96.8 5.3 3.0 SA64A SA64CA 64 71.1 78.6 1.0 103 5.0 3.0 SA70A SA70CA 70 77.8 1.0 113 4.5 3.0 SA75A SA75CA 75 83.0 92.1 1.0 121 4.2 3.0 SA78A SA78CA 78 86.0 95.8 1.0 126 4.0 3.0 SA85A SA85CA 85 94.0 104 1.0 137 3.7 3.0 SA100A SA100CA 100 111 123 1.0 162 3.1 3.0 SA110A SA110CA 110 122 135 1.0 177 2.9 3.0 SA120A SA120CA 120 133 147 1.0 193 2.6 3.0 SA130A SA130CA 130 144 159 1.0 209 2.4 3.0 SA150A SA150CA 150 167 185 1.0 243 2.1 3.0 SA160A SA160CA 160 178 197 1.0 259 2.0 3.0SA170A SA170CA 170 189 209 1.0 275 1.9 3.0TYPERating at = 25 °C ambient temperature unless otherwise specified255075100125150175200100755025T ,AMBIENT TEMPERATURE (°C)Fig.4Pulse Derating CurveA P K P U L S E D E R A T I N G (%P K P W R O R C U R R E N T )2550751001251501752000001.0T ,LEAD TEMPERATURE (°C)Fig.5,Steady State Power DeratingL P ,S T E A D Y S T A T E P O W E R D I S S I P A T I O N (W )d 0.11.0T ,PULSE WIDTH (µs)Fig.3Pulse Rating Curvep 0.1101001.010100100010000P ,P E A K P U L S E P O W E R (k W )P 0123I ,P E A K P U L S E C U R R E N T (%)P p pt,TIME (ms)Fig.1Pulse Waveform110100100010100100010,000V ,REVERSE STANDOFF VOLTAGE (V)Fig.2Typical Junction CapacitanceRWM C ,C A P A C I T A N C E (p F )j。
ALD1116PAL;ALD1116SAL;中文规格书,Datasheet资料
DN4 5
10 DN3
GN4 6
9 GN3
SN4 7
8 SN3
TOP VIEW SBL, PBL, DB PACKAGES
BLOCK DIAGRAM
DN1 (1)
ALD1106
V+ (11)
DN2 (14)
~
DN3 (10)
DN4 (5)
ALD1116
V+ (5)
~ DN1 (1)
DN2 (8)
GN1 (2)
ADVANCED LINEAR DEVICES, INC.
ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits.
SA52-11SRWA, 规格书,Datasheet 资料
SPEC NO: DSAA4906 APPROVED: WYNEC
REV NO: V.12 CHECKED: Joe Lee
DATE: FEB/09/2011 DRAWN: D.M.Su
PAGE: 1 OF 6 ERP: 1301000527
芯天下--/
Selection Guide
PACKING & LABEL SPECIFICATIONS
SA52-11SRWA
SPEC NO: DSAA4906 APPROVED: WYNEC
REV NO: V.12 CHECKED: Joe Lee
DATE: FEB/09/2011 DRAWN: D.M.Su
PAGE: 4 OF 6 ERP: 13010Βιβλιοθήκη 0527Description
The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.
Package Dimensions& Internal Circuit Diagram
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating / Storage Temperature Lead Solder Temperature[2]
SA36CA中文资料
1. Suffix “A” denotes unidirectional, suffix “CA” denotes bi-directional device. 2. For bi-directional devices having VR of 10 volts and under, the IR limit is doubled.
CT, CAPACITANCE (pF)
1000 500
VR = 0
Half Value I pp/2 50
100 50 VR = Rated Stand-off Voltage
tp
0
as defined by R.E.A.
10 x 1000 Wave form
10
0
1
2
3
5
10
20
50
100
20
50
DS21501 Rev. 10 - 2
2 of 3
SA5V0A - SA170A
元器件交易网
10,000
PEAK PULSE CURRENT - % Ipp
100
t r = 10 msec
Peak Value Ipp
5,000
Unidirectional Bidirectional
DS21501 Rev. 10 - 2
1 of 3
SA5V0A - SA170A
元器件交易网
Type Number (Suffix C = Bidirectional) (Note 1) SA5V0(C)A SA6V0(C)A SA6V5(C)A SA7V0(C)A SA7V5(C)A SA8V0(C)A SA8V5(C)A SA9V0(C)A SA10(C)A SA11(C)A SA12(C)A SA13(C)A SA14(C)A SA15(C)A SA16(C)A SA17(C)A SA18(C)A SA20(C)A SA22(C)A SA24(C)A SA26(C)A SA28(C)A SA30(C)A SA33(C)A SA36(C)A SA40(C)A SA43(C)A SA45(C)A SA48(C)A SA51(C)A SA54(C)A SA58(C)A SA60(C)A SA64(C)A SA70(C)A SA75(C)A SA78(C)A SA85(C)A SA90(C)A SA100(C)A SA110(C)A SA120(C)A SA130(C)A SA150(C)A SA160(C)A SA170(C)A Notes: Reverse Standoff Voltage VR (V) 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 Breakdown Voltage VBR @ It Min (V) 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189 Max (V) 7.00 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92.1 95.8 104.0 111.0 123.0 135.0 147.0 159.0 185.0 197.0 209.0 Test Current It (mA) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max. Clamping Voltage @IPP VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 137.0 146.0 162.0 177.0 193.0 209.0 243.0 259.0 275.0 Max. Reverse Max. Leakage Peak @VR Pulse Current (Note 2) IPP (A) 54.3 48.5 44.7 41.7 38.8 36.7 34.7 32.5 29.4 27.4 25.1 23.2 21.5 20.6 19.2 18.1 17.2 15.4 14.1 12.8 11.9 11.0 10.3 9.4 8.6 7.8 7.2 6.9 6.5 6.1 5.7 5.3 5.2 4.9 4.4 4.1 4.0 3.6 3.4 3.1 2.8 2.6 2.4 2.1 1.9 1.8 IR (mA) 600 600 400 150 50 25 10 5.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 Max. Voltage Temp. Variation of VBR mV/°C 5.0 5.0 5.0 6.0 7.0 7.0 8.0 9.0 10 11 12 13 14 16 17 19 20 23 25 28 30 31 36 39 41 46 50 52 56 61 65 70 71 76 85 91 95 103 110 123 133 146 158 184 196 208
SC36-11EWA, 规格书,Datasheet 资料
Description
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
Package Dimensions& Internal Circuit Diagram
Note: 1. Luminous intensity/ luminous Flux: +/-15%.
Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red Typ. 627 625 45 15 2.0 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR=5V
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
EE-SX911-R 1M;中文规格书,Datasheet资料
Sensing distance Sensing object Differential distance Light source Indicator Supply voltage Current consumption
Control output
Protection circuits Response frequency Ambient illumination Ambient temperature range Ambient humidity range Vibration resistance (Destruction) Shock resistance (Destruction) Degree of protection Connecting method
Байду номын сангаас
Indicator Visible from Many Directions for Installation in Any Location Compact NPN and PNP Output Models
Both NPN and PNP output models are available for use according to system requirements. The light indicator can be checked from up to four directions.
Compact Pre-wired Photomicrosensor with Built-in Amplifier (Non-modulated)
EE-SX91
CSM_EE-SX91_DS_E_3_1
Meeting Customer Needs with Compact Sensors that Mount with M3 Screws
E3643A中文资料(Agilent(Hewlett-Packard))中文数据手册「EasyDatasheet - 矽搜」
防护
一年E364xA系列电源
三个月标准运附件
产品监管
设计符合UL3111-1;认证,CSA 22.2 1010.1号; 符合IEC 1010-1;符合EMC指令89/336/EEC（第1组,A类）
订购信息
安捷伦E364xA系列电源 E3640A 30瓦单电源 E3641A 30瓦单电源 E3642A 50瓦单电源 E3643A 50瓦单电源 E3644A 80瓦单电源 E3645A 80瓦单电源 E3646A 60瓦双电源 E3647A 60瓦双电源 E3648A 100瓦双电源 E3649A 100瓦双电源
E3640A
E3641A
E3642A
E3643A
E3644A
E3645A
30 W
50 W
80 W
1
0至8 V / 3 A或 0 to 20 V/1.5 A
5.3千克
1
0〜35 V / 0.8 A或 0 to 60 V/0.5 A
5.2千克
1
0至8 V / 5 A或 0 to 20 V/2.5 A
6.3千克
*与1CM或锁定链接机架安装/ FL法兰套件需要
安捷伦或客户支持轨
安捷伦支持RailsE3663AC
5
（标准命令 可编程仪器）允许快速和简单编程程
序. 此外,用户手册,为所有最终用户 编程足够信息,从初学者到退伍军人 .
广泛支持
VXI 即插即用 软件驱动程序 适用于VEE,国家 仪器公司LabVIEW and LabWin dows .有这些驱动程序, 整合E364xA到您 系统不能有任何容易.该
驱动程序在微软支持
准确度 编程 电压
12个 月
（@ 25ºC±5°C）,±（％输出+偏移）
DSEI60-06A;中文规格书,Datasheet资料
166 W
0.8...1.2 Nm
6
g
Symbol
IR
VF
VT0 rT RthJC RthCH trr IRM
Conditions
Characteristic Values typ. max.
VR = VRRM VR = 0.8·VRRM VR = 0.8·VRRM
TVJ = 25°C TVJ = 25°C TVJ = 125°C
IXYS reserves the right to change limits, test conditions and dimensions
© 2007 IXYS All rights reserved
/
0549
2-2
Dimensions TO-247 AD
C
D
t = 8.3 ms (60 Hz), sine
TC = 25°C mounting torque typical
Maximum Ratings
100 A 60 A
550 A 600
480 A 520Biblioteka 1510 A2s 1490
1150 A2s 1120
-55...+150 °C 150 °C
-55...+150 °C
Fast Recovery Epitaxial Diode (FRED)
DSEI60-06A DSEI60-06AT
IFAV = 60 A VRRM = 600 V trr = 35 ms
VRSM V
600 600
VRRM V
600 600
Type
DSEI 60-06A DSEI 60-06AT
A
BL-S36A-11S-01中文资料
Iv TYP.(mcd
)
17
13
13
13
BL-S36A-11UG-XX BL-S36B-11UG-XX Ultra Green
AlGaInP
574 2.20 2.50
15
BL-S36A-11PG-XX
BL-S36B-11PG-XX
Ultra Pure Green InGaN
525 3.80 4.50
元器件交易网
LED NUMERIC DISPLAY, 1 DIGIT BL-S36X-11
Package configuration & Internal circuit diagram
Notes: 1. All dimensions are in millimeters (inches)
BL-S36B-11Y-XX
Yellow
GaAsP/GaP
585 2.10 2.50
10
BL-S36A-11G-XX
BL-S36B-11G-XX
Green
GaP/GaP
570 2.20 2.50
10
Ultra Bright
Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA)
Ref Surface Color White
Epoxy Color
Water
clear
1
2
3
4
5
Black White diffused
Gray Red Diffused
Red Green Diffused
Green Yellow Diffused
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Notes: 1. All dimensions are in millimeters (inches), Tolerance is ±0.25(0.01")unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 2 OF 6 ERP: 1301000316
芯天下--/
High Efficiency Red
PACKING & LABEL SPECIFICATIONS
SA36-11EWA
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 4 OF 6 ERP: 1301000316
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 1 OF 6 ERP: 1301000316
芯天下--/
Selection Guide
9.14mm (0.36INCH) SINGLE DIGIT NUMERIC DISPLAY
Part Number: SA36-11EWA High Efficiency Red
Features
0.36 inch digit height. Low current operation. Excellent character appearance. Easy mounting on P.C. boards or sockets. Categorized for luminous intensity. Mechanically rugged. Standard : gray face, white segment. RoHS compliant.
芯天下--/
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 5 OF 6 ERP: 1301000316
芯天下--/
Part No. Dice Lens Type Iv (ucd) [1] @ 10mA Min. SA36-11EWA High Efficiency Red (GaAsP/GaP) White Diffused 900 Typ. 2100 Common Anode, Rt. Hand Decimal. Description
SA36-11EWA
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1301000316
芯天下--/
Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base.
High Efficiency Red 75 30 160 5 -40°C To +85°C 260°C For 3-5 Seconds
Units mW mA mA V
Note: 1. Luminous intensity/ luminous Flux: +/-15%.
Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red Typ. 627 625 45 15 2.0 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR=5V
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating / Storage Temperature Lead Solder Temperature[2]
Description
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
Package Dimensions& Internal Circuit Diagram
SPEC NO: DSAC3234 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: MAR/29/2011 DRAWN: J.Yu
PAGE: 6 OF 6 ERP: 1301