微电子专业英语翻译
Recombination phenomena can be classified as direct and indirect processes . Direct recombination , also called band-to-band recombination , usually dominates in direct-bandgap semiconductors , such as gallium arsenide ; while indirect recombination via bandgap recombination centers dominates in indirect bandgap semiconductors , such as silicon.
2.5 Generation and Recombination Processes 载流子产生与复合过程
Whenever the thermal-equilibrium condition is disturbed (i.e.,pn ≠ ni2) , processes exist to restore the syetem to equilibrium(i.e.pn=ni2).In the case of the injection of excess carriers, the mechanism that restores equilibrium is recombination of the injected minority carrier with the majority carriers. Depending on the nature of the recombination process, the released energy that results from the recombination process can be emitted as a photon or dissipated as heat to the lattice. When a photon is emitted , the process is called radiative recombination ;otherwise, it is called nonradiative recombination. 当热平衡条件受到扰乱时（即pn ≠ ni2），会出现一些使系统回复平衡的机制（即 pn=ni2 ）。在超量载流子注入的情形下，回复平衡的机制是将注入的少数载流子 与多数载流子复合。视复合过程的本征而定，复合过程所释放出的能量，一般以 光子形式辐射出或是对晶格产生热而消耗掉。一个光子被辐射出，此过程称为辐 射复合，反之则称为非辐射复合。
当电子从导带向下移到价带， 一个电子 - 空穴对消失。这 种反向过程称为复合，并以 复 合 率 Rth 表 示 ， 如 图 2.11 （ a ）所示。在热平衡状态 下，产生速率 Gth 必定等于 复合率 Rth ，所以载流子浓 度维持常数，且维持 pn=ni2 的状况。
When excess carries are introduced to a direct-bandgap semiconductor, the probability is high that electrons and holes will recombine directly ,because the bottom of the conduction band and the top of the valence band are lined up and no additional crystal momentum is required for the transition across the bandgap . The rate of the direct recombination R is expected to be proportional to the number of holes available in the valence band; that is R=βnp where β is the proportionality constant.
复合现象可分为直接和间接过程。直接复合，又称为带至带复合，通常在直 接禁带的半导体中较为显著，如砷化镓；而通过禁带复合中心的间接复合则 在间接禁带的半导体中较为显著，如硅晶。
Consider a direct-bandgap semicond uctor in thermal equilibrium . The continuous thermal vibration of lattice atoms causes some bonds between neighboring atoms to be broken . When a bond is broken ,an electron-hole pair is generated. In terms of the band diagram, the thermal energy enables a valence electron to make an upward transition to the conduction band leaving a hole in the valence band. This process is called carrier generation and is represented by the generation rate Gth(number of electron-hole pairs generated per cm3 per second) in Fig.2.11(a).
考虑一个在热平衡状态下的直接禁带半导体。 晶格原子连续的热扰动造成邻近原子间的键 断裂。当一个键断裂，一对电子空穴对就产 生了。以能带图的观点而言，热能使得一个 价电子向上移到导带，而留下一个空穴在价 带。这个过程称为载流子产生，并以产生速 率 Gth （每立方厘米每秒产生的电子 - 空穴对 数目）表示，如图2.11（a）所示。
Therefore , the net recombination rate is proportional to the excess minority carrier concentration .The proportionality constant 1/β nno is called the lifetime Tp of the excess minority carriers . The physical meaning of lifetime can best be illustrated by the transient response of a device after the sudden removal of the light source . Consider an n-type sample, as shown in Fid.2.12(a) ,that is illuminated with light and in which the electron-hole pairs are generated uniformly throughout the sample with a generation rate GL. Fig.1.12(b) shows the variation of pn with time. The minority carriers recombine with majority carriers and decay exponentially with a time constant Tp which corresponds to the lifetime. 因此，净复合率正比于超量少数载流子浓 度。比例常数1/β nno称为超量少数载流子 的寿命Tp。寿命的物理意义可通过器件在 瞬间移去光源后的暂态响应作最好的说明。 考虑一个n型样品，如图2.12（a），光照 射其上且整个样品中以一个产生速率 GL 均匀地产生电子-空穴对。图2.12（b）显 示pn随时间的变化。少数载流子与多数载 流子复合，且寿命Tp成指数衰减。
如前面所讨论的，在热平衡下 复合率必定与产生速率保持平 衡，因此，对以n型半导体而言， 我们可以得到 G th=R th=βn no p no 。nno及pno分别表示在热 平衡下，n型半导体中的电子及 空穴浓度。我们在半导体上照 光，使它以GL的速率产生电子空穴对（如图2.11（b）），载 流子浓度将大于平衡时的值。
The above case illustrates the main idea of measuring the carrier lifetime using photoconductivity method . Fig.2.12(c) shows a schematic setup .The excess carriers ,generated uniformly throughout the sample by the light pulse , cause a momentary increase in the conductivity . The increase in conductivity manifests itself by a drop in voltage across the sample when a constant current is passed through it . The decay of the conductivity can be observed on an oscilloserved on an oscilloscope and is a measure of the lifetime of the excess minority carriers. 以上情形说明使用光电导方法来测量 载流子寿命的主要概念。如图2.12（c） 显示一个图示的装置。通过光脉冲照 射，整个样品中均匀产生超量载流子， 因而造成电导率瞬间增加。而电导率 的增加，可由将一定电流通过样品使 样品两端产生一小电压而显示出来。 电导率的衰减可由示波器上观察得知， 它同时又是测量超量少数载流子寿命 的一种方法。
实验室专业术语中英文翻译对照
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专业英语 缩写翻译
ABI 应用二进制接口(Application Binary Interface)ACSI 国家信息化咨询委员会（advisory committee for state informatization）ADSL 非对称数字用户线路(Asymmetric Digital Subscriber Line)AI 人工智能（artificial intelligence）AMPS 高级移动电话系统(Advanced Mobile Phone System)API 应用程序接口(Application Programming Interface)ASIC 特定用途集成电路（Application Specific Integrated Circuit）ASTM 美国试验材料学会（American Society for Testing Material）AT&T 美国电话电报公司（American Telephone and Telegraph Company）ATM 异步传输模式(Asynchronous Transfer Mode)ATOS Origin 源讯公司Auto-ID 自动识别（Auto-ID）AWS 美国航空气象处（Air Weather Service）；BAP 基本汇编程序（Basic Assembler Program）BGA 集成电路采用有机载板的一种封装法BOINC 伯克利开放式网络计算 (Berkeley Open Infrastructure For Network Computing ) BSP 板级支持包(Board Support Package)Business Processing 业务处理流程CaaS 通信即服务(communication as a Service)CAN 控制器局域网络(Controller Area Network)CAS 中国科学院（Chinese Academy of SciencesCCTV 中国中央电视台（China Central Television）CDMA2000 电信移动通信系统CIP 预编目录（cataloging in publication）CITYNET 城市间合作网络CMU 卡内基梅隆大学（Carnegie Mellon University）CN 通信网络（Communicating Net）CPU 中央处理机（Central Processing Unit）CRA 应答验证 (challenge-response authentication)DARPA 美国国防部高级研究计划局（Defense Advanced Research Projects Agency）DARPA 研究计划署(Defense Advanced Research Projects Agency)DASH7Data mining 数据挖掘技术（即指从资料中发掘资讯或知识）DDoS 分布式拒绝服务（Distributed Denial of Service）DG INFSO 媒体总司DG INFSO/D4 欧盟委员会DGINFSO‐D4DMM 分布式内存多处理器（distributed memory multiprocessor）DNS 域名服务器（Domain Name Server）DoD 美国国防部（Department of Defense of the United States）DRAM 动态随机存取存储器（Dynamic Random Access Memory）DSL 数字用户线路(Digital Subscriber Line)DSP 数字信号处理器（Digital Signal Processor）DSS 决策支持系统（Decision Support Systems）DynDNS 动态DNSEAN 欧洲商品编码(Europ Article Number)EAS 电子防窃系统（Electronic Article Surveillance）ECMA 欧洲电脑制造商协会（European Computer Manufactures Association）EPC 电子产品代码(Electronic Product Code)EPCglobal 国际物品编码协会EAN和美国统一代码委员会（ UCC ）的一个合资公司ERP 企业资源计划（Enterprise Resource Planning）ETSI 欧洲电信标准协会（European Telecommunication Standards Institute）EU-funded CASAGRAS1 coordination 欧盟资助CASAGRAS1协调FAT 文件分配表(File Allocation Table)FP7 欧盟第七框架计划(Framework Program 7)FreeOTFE 免费实时加密FSTC 金融服务技术联盟(Financial Services Technology Consortium)FTP 文件传输协议（File Transfer Protocol）GM 通用汽车公司（General Motors）GMSA 全球移动通信系统协会(global system for mobile communications association) GPRS 通用分组无线业务（General Packet Radio Service）GPS 全球定位系统（Global Position System）GSM 全球移动通信系统（Global System for Mobile Communications）GUI-based 图形用户界面HP 惠普公司HTML5 HTML5是HTML下一个的主要修订版本，现在仍处于发展阶段HTTP 超文本传输协议（Hyper Text Transport Protocol）HTTPS 安全超文本传输协议(Hypertext Transfer Protocol Secure)I²C 两线式串行总线（Inter－Integrated Circuit）IaaS 架构即服务(Infrastructure As A Service)IATA 国际航空运输协会（International Air Transport Association）ICC 集成电路卡(integrated circuit card)ICT 集成电路计算机遥测技术（Integrated Computer Telemetry）iDA 资讯通信发展管理局(infocomm Development Authority)IEC 国际电工技术委员会（International Electrotechnical Commission）IEEE 电气与电子工程师协会（Institute of Electrical and Electronic Engineers）IETF Internet工程任务组（Internet Engineering Task Force）IMT-2000 国际移动电话系统-2000（International Mobile Telecom System-2000）IOT 物联网(Internet Of Things)IPSec 网际协议安全（Internet Protocol Security）IPSO 因特网协议安全选件（Internet protocol security option ）IPv4 IPv4，是互联网协议（Internet Protocol，IP）的第四版IR 指令寄存器（instruction register）ISA 工业标准总线(Industry Standard Architecture)ISM 美国供应管理协会（the Institute for Supply Management , ISM）ISO 国际标准化组织（International Standardization Organization）ISTAG IST咨询集团(IST advisory group)IT 信息技术(Information Technology)ITSO_LtdITU 国际电信联盟（International Telecommunication Union）KAEC 阿卜杜拉国王经济城(King Abdullah Economic City)KVM 基于内核的虚拟机（K Virtual Machine）LAN 局域网（local area network）LCD 液晶显示屏（liquid crystal display）LR-WPAN 低速率无线个人区域网络（Low Rate-Wireless Personal Area Network）LSI 大规模集成电路（Large Scale Integrated circuit）MAC 多路存取计算机（Multi-Access Computer)MAN 城域网(Metropolitan Area Network)MASDAR 马斯达尔MEMS 微电子机械系统（Micro-electromechanical Systems）METI 日本经济贸易产业省（Ministry of Economy， Trade and Industry）MIC 部门内部事务和通讯(the ministry of internal affairs and communications) MIT 麻省理工学院（Massachu-setts Institute of Technology）；MPP 大量信息并行处理机，大规模并行处理机（Massively Parallel Processor）MRI 核磁共振成像（Magnatic Resonance Imaging）；MSI 中规模集成电路（medium-scale integration）MVNO AdicaNaaS 网络即服务(Network As A Service)NASA 美国国家航空和宇宙航行局（National Aeronautics and Space Administration）NetBSD 一个免费的，具有高度移植性的UNIX-like操作系统NFC 近场通讯(Near Field Communication)NFCIPNIC 网络接口卡(Network Interface Card)NMT 北欧移动电话(Nordic Mobile Telephone)NSF （美国）国家科学基金会（National Science Foundation）NTT DoCoMo 移动通信网公司NYU 纽约大学（New York University）OLED 有机发光二极管（Organic Light Emitting Diode）ONS 国家统计局(Office For National Statistics)P2P 点对点技术（peer-to-peer）；PaaS 平台即服务(Platform As A Service)PARC 帕洛阿尔托研究中心（Palo Alto Research Center）PC 个人电脑（Personal Computer）；PCI 外部控制器接口（Peripheral Component Interconnect）PHY 物理层协议（Physical Layer）PKI 公钥基础设施（Public Key Infrastructure）POTS 普通老式电话服务(Plain Old Telephone Service)QNX 嵌入式实时操作系统（Quick Unix ）R&D 研发(Research & Development)RACO 德国雷科resPONDER 响应器RFID 无线射频识别（radio frequency identification devices）RISC 精简指令集计算机（Reduced Instruction-Set Computer）ROM 只读存储器（read only memory）RS-232 串行数据通信的接口标准RTOS 实时操作系统（Real Time Operating System）SaaS 软件即服务（Software as a Service）SAP SAP是目前全世界排名第一的ERP软件SAVVIS 维斯公司SCADA 监测控制和数据采集（supervisory control and data acquisition）SIM 用户身份识别卡（subscriber identity module）SIMD 单指令多数据(Single Instruction Multiple Data)SIMIT 中国科学院上海微系统与信息技术研究所SMP 对称多处理机（SymmetricalMulti-Processing）SOC 片上系统（System on a Chip）SPOM 自动程序单芯片微处理(Self Programmable One Chip Microprocessor)SPT 季票 (season parking ticket)SRI 斯坦福研究院(Stanford Research Institute)SSE 单指令多数据流式扩展 ( streaming SIMD extensions)SSI 小规模集成（电路）（Small Scale Integration）；SSO 单点登录（single sign-on）T2TITTACS 全接入通信系统（Total Access Communication System）TCB 可信计算基(Trusted Computing Base)TCP/IP 传输控制/网络通讯协定（Transmission Control Protocol / Internet Protocol）TD-SCDMA 即时分同步的码分多址技术（Time Division-Synchronization Code Division Multiple Access）TEDS 传感器电子数据表（Transducer Electronic Data Sheet）TLS/SSL SSL（Secure Sockets Layer，安全套接层）TPANSmitterTRON 实时操作系统核心程序（The Realtime Operating System Nucleus）U.S.Department of Defence 美国国防部UCC 统一编码委员会（uniform code council inc）UCLA 加州大学洛杉矶分校（University of California at Los Angeles）UHF 超高频（Ultra High Frequency）UML 统一建模语言（Unified Modeling Language）UNL 无处不在的网络实验室（ubiquitous networking laboratory）USAID 美国国际开发署（United States Agency for International Development）USB 通用串行总线（Universal Serial Bus）USDA 美国农业部（United States Department of Agriculture）VLSI 超大规模积体电路（Very Large Scale Integrated Circuites）VNP-VNOWAN 广域网(Wide Area Network)WCDMA 宽带码分多址移动通信系统（Wideband Code Division Multiple Access）Wi-Fi 无线上网技术WROM 一次写/读很多内存(write once/read many memory)WSN 无线传感网络(wireless sensor network)。
电子信息工程专业英语英译汉翻译
1 The transistor is what started the evolution of the modern computer industry in motion.晶体管开启了现代电脑工业的革命2 The storage cell only requires one capacitor and one transistor, whereas a flip-flop connected in an array requires 6 transistors.存储单元仅需要一个电容和晶体管，并而不像触发器整列那样需要6个晶体管3 There has been a never ending series of new op amps released each year since then, and their performance and reliability has improved to the point where present day op amps can be used for analog applications by anybody.从此以后每年都有新系列的运放发布，他们的性能和可靠性得到了提升，如今任何人都能用运放来设计模拟电路。
4 This is capable of very high speed conversion and thus can accommodate high sampling rates, but in its basic form is very power hungry.它具有高速转换能力，从而能适应高速采样速率，但它的基本形式非常耗电。
5 During the “on” period , energy is being stored within the core material of the inductor in the form of flux.在”on”阶段，能量以涌浪形式存储在电感的核芯材料里面6 The design goal of frequency synthesizers is to replace multiple oscillators in a system, and hence reduce board space and cost.频率合成器的设计目标是取代系统中多个振荡器，从而减小板卡面积和成本。
电子科学与技术专业英语(微电子技术分册)第一章译文
——电材专业英语课文翻译Semiconductor Materials• 1.1 Energy Bands and Carrier Concentration• 1.1.1 Semiconductor Materials•Solid-state materials can be grouped into three classes—insulators(绝缘体）, semiconductors, and conductors. Figure 1-1 shows the electrical conductivities δ(and the corresponding resistivities ρ≡1/δ)associated with(相关）some important materials in each of three classes. Insulators such as fused（熔融）quartz and glass have very low conductivities, in the order of 1E-18 to 1E-8 S/cm;固态材料可分为三种：绝缘体、半导体和导体。
图1－1 给出了在三种材料中一些重要材料相关的电阻值（相应电导率ρ≡1/δ)。
绝缘体如熔融石英和玻璃具有很低电导率，在10-18 到10-8 S/cm;and conductors such as aluminum and silver have high conductivities, typically from 104 to 106 S/cm. Semiconductors have conductivities between those of insulators and those of conductors. The conductivity of a semiconductor is generally sensitive to temperature, illumination（照射）, magnetic field, and minute amount of impurity atoms. This sensitivity in conductivity makes the semiconductor one of the most important materials for electronic applications.导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。
电子行业微电子专业词汇
电子行业微电子专业词汇1. 微电子微电子是指电子学中研究和制造尺寸较小的电子元件和系统的学科。
其研究对象主要包括集成电路、微处理器、传感器等微小尺寸的电子设备。
微电子技术的应用领域包括计算机、通信、医疗、能源等众多领域。
以下是一些微电子领域常见的专业词汇。
2. 专业词汇2.1. 集成电路（Integrated Circuit, IC）集成电路是将数千甚至数百万个电子元件（如晶体管、电容等）集成在一个芯片上的电路。
根据使用的材料和工艺，集成电路可以分为光电子集成电路（Optoelectronic Integrated Circuit, OEIC）、模拟集成电路（Analog Integrated Circuit）和数字集成电路（Digital Integrated Circuit）等多种类型。
2.2. 硅晶圆（Silicon Wafer）硅晶圆是制造集成电路的基础材料，通常由纯度很高的单晶硅制成。
硅晶圆形状类似于圆盘，通过化学加工和光刻技术，在圆盘表面制造出大量微小电子元件。
2.3. MOSFET（金属氧化物半导体场效应晶体管）MOSFET是一种常见的场效应晶体管，也是数字集成电路的关键元件之一。
MOSFET结构由金属栅极、氧化物绝缘层和半导体材料构成，通过对栅极电压的控制，可以实现对电流的精确控制。
2.4. CMOS（互补金属氧化物半导体）CMOS是一种常用的数字集成电路技术，它通过同时使用N型金属氧化物半导体（NMOS）和P型金属氧化物半导体（PMOS）构成逻辑门电路。
CMOS技术具有低功耗、高集成度和抗干扰能力强的优势。
2.5. MEMS（微电子机械系统）MEMS是一种将微机械系统与集成电路技术相结合的技术，它利用微小尺寸的机械结构和传感器，实现对物理环境的感知和控制。
MEMS技术广泛应用于加速度计、陀螺仪、压力传感器等微小尺寸传感器的制造。
2.6. LSI（大规模集成电路）LSI是一种集成度较高的集成电路，其中包含数千至数十亿个晶体管和电子元件。
微电子专业英语翻译
当超量载流子被导入一个直接禁带半导体时，电子与空穴直接复合的几率 较高，这是因为导带的底部与价带的顶端位于同一线上，因此在禁带间跃 迁时，无需额外的动量。直接复合率R应正比于导带中含有的电子数目及 价带中含有的空穴数目。也就是 R=βnp 。其中β为比例常数。
As discussed previously, in thermal equilibrium the recombination rate must be balanced by the generation rate . Therefore , for an n-type semiconductor, we have Gth=Rth=βn no p no where nno and pno represent electron and hole densities in an n-type semiconductor at thermal equilibrium. When we shine a light on the semiconductor to produce electron-hole pairs at a rate GL(Fig.2.11(b)), the carrier concentrations are above their equilibrium values.
当超量载流子被导入一个直接禁带半导体时电子与空穴直接复合的几率较高这是因为导带的底部与价带的顶端位于同一线上因此在禁带间跃迁时无需额外的动量
2.5 Generation and Recombination Processes 载流子产生与复合过程
3. Characteristics of Diodes二极管特性 3.1 Introduction介绍
当电子从导带向下移到价带， 一个电子 - 空穴对消失。这 种反向过程称为复合，并以 复 合 率 Rth 表 示 ， 如 图 2.11 （ a ）所示。在热平衡状态 下，产生速率 Gth 必定等于 复合率 Rth ，所以载流子浓 度维持常数，且维持 pn=ni2 的状况。
合肥工业大学各学院、专业名称及其英文翻译
47、信息管理与信息系统 Information Management & System
48、旅游管理 Tourism Management
49、市场营销 Marketing
人文经济学院 School of Humanities and Economics
55、英语 English
56、法学 Law
57、社会工作 Social Work
生物与食品工程学院 School of Biotechnology and Food Engineering
58、生物工程 Bioengineering
16、自动化 Automation
计算机与信息学院 School of Computer and Information
17、计算机科学与技术 Computer Science & Technology
18、电子信息工程 Electronic Information Engineering
4、工业工程 Industrial Engineering
5、工业设计 Industry Design
6、过程装备与控制工程 Process Equipment & Control Engineering
7、机械设计制造及其自动化 Machine Design & Manufacture & Its Automation
50、财政学 Finance
51、广告学 Advertisement
52、国际经济与贸易 International Economy & Trade
微电子专业英语部分翻译第四章
第四章199页4.1 It was...有人建议在这一章介绍设计自动化在处理复杂性急剧增加的现代集成电路上起了重大的作用。
设计一个数百万晶体管电路，并确保其正常运行时的第一个硅片回报是一项艰巨的，如果没有电脑辅助设备和完善的设计方法的帮助，几乎是不可能的任务。
在一般情况下，提供给设计者的广泛的工具可以被细分成若干全球类。
●分析和验证的工具检查电路的行为，并帮助确定该响应是规范范围内。
●实施和综合的方法帮助设计人员产生和优化电路原理图和布局。
●可测试性技术提供的设计方法和CAD工具的组合来验证制造的设计的功能。
200页4.2 The primary...相对于设计自动化设计师的主要预期是准确、快速的分析工具的可用性。
第一计算机辅助设计（CAD）工具得到广泛认可是SPICE电路仿真器，这无疑是目前最利用计算机辅助数字电路[Nagel75]。
不幸的是，电路仿真考虑到所有的特殊性设计和半导体器件的二阶效应，往往是设计复杂的电路，而且往往是耗时的。
当设计复杂的电路时，它正迅速成为不实用的，除非有人愿意花数天电脑的时间。
设计者可以通过放弃建模精度和求助于更高代表性水平来处理复杂性问题。
提供给设计师不同的抽象层次的讨论及其对仿真精度的影响是本节的话题。
202页4.2.1 In the course....在本章的过程中，我们使用的电路仿真广泛地说明了数字电路的基本概念，并以此验证我们的手动挡车型。
在每章末尾的作业也严重依赖于电路模拟。
因此，你应该对这种详细程度的模拟、分析的功能和特点很熟悉了。
电路仿真的一些重要属性值得总结。
●当分析使用电路模拟器的数字网络，所得到的电压和电流信号被表示为连续的波形。
●在瞬态分析中，时间似乎是连续可变的，并且对于所有的实际目的，可以被认为是这样的。
在现实中，在数字计算机上执行的仿真计算结果仅有限数量的时间点和通过内插获得的中间数据点。
203页4.2.1 Substantial effort...随着时间的推移大量的努力已投入到用一般性的费用来减少计算时间。
微电子专业英文翻译
Embedded Processor Based Automatic TemperatureControl of VLSI ChipsAbstractThis paper presents embedded processor based automatic temperature control of VLSI chips, using temperature sensor LM35 and ARM processor LPC2378. Due to the very high packing density, VLSI chips get heated very soon and if not cooled properly, the performance is very much affected. In the present work, the sensor which is kept very near proximity to the IC will sense the temperature and the speed of the fan arranged near to the IC is controlled based on the PWM signal generated by the ARM processor. A buzzer is also provided with the hardware, to indicate either the failure of the fan or overheating of the IC. The entire process is achieved by developing a suitable embedded C program.Keywords: Temperature sensor, ARM processor, VLSI chips, Brushless DC motor1.IntroductionWith the phenomenal developments in VLSI technology, the ambitious IC designers are trying to put more transistors in to smaller packages. So, the ICs run at higher speeds and produce large amount of heat which creates the problem of thermal management. For example, nowadays the CPU chips are becoming smaller and smaller with almost no room for the heat to escape. The total power dissipation levels now reside on the order of 100 W with a peak power density of 400-500 W/Cm2, and are still steadily climbing.As the chip temperature increases its performance is very much degraded by parameters shift, decrease in operating frequencies and out-of specification of timings. So the high speed chips must be cooled to maintain good performance for the longest possible operating time and over the widest possible range of environmental conditions. The maximum allowable temperature for a high speed chip to meet its parametric specifications depends on the process and how the chip is designed.Among the various cooling techniques, heat sinks, heat pipes, fans and clock throttling are usually employed. Among these techniques, fans can dramatically reduce the temperature of a high speed chip,but they also generate a great deal of acoustic noise. This noise can be reduced significantly by varying ,the fans speed based on temperature i.e. the fan can turn slowly when the temperature is low and canspeed up as the temperature increases.The other prominent method is clock throttling i.e. reducing the clock speed to reduce power dissipation. But it also reduces the system performance and the systems functionality is lost.So, the objective of the present work is, to design a hardware system consisting of a brushless DC motor fan whose speed is controlled based on the temperature of the chip, sensed by the sensor LM35.The LM35 series are precision integrated-circuit temperature sensors, whose output voltage is linearly proportional to the Celsius (Centigrade) temperature. The LM35 thus has an advantage over linear temperature sensors calibrated in Kelvin, as the user is not required to subtract a large constant voltage from its output to obtainconvenient Centigrade scaling. The LM35 does not require anyexternal calibration or trimming to provide typical accuracies of ±1⁄4°C at room temperature and ±3⁄4°C over a full −55 to +150°C temperature range. Low cost is assured by trimming and calibration at the wafer level. The LM35’s low output impedance, linear output, and precise inherent calibration make interfacing to readout or control circuitry especially easy. It can be used with single power supplies, or with plus and minus supplies. As it draws only 60 μA from its supply, it h as very low selfheating, less than 0.1°C in still air. The LM35 is rated to operate over a −55° to +150°C temperature range, while the LM35C is rated for a −40° to +110°C range (−10° with improved accuracy). The LM35 series is available packaged in hermetic TO-46 transistor packages, while the LM35C, LM35CA, and LM35D are also available in the plastic TO-92 transistor package. The LM35D is also available in an 8-lead surface mount small outline package and a plastic TO-220 package. To monitor the voltage at the terminals of the DC motor fan, the PWM signal is generated by the ARM7TDMI processor. This PWM signal is changed in accordance to the output of the LM35temperature sensor. So the important component of this entire project is the temperature sensor.2. DescriptionIn ARM processor based automatic temperature control system, the output of the temperature sensor is fed to the on chip ADC and the output of the ADC is given to the L293D driver IC which in turn is fed to DC motor fan as shown in the block diagram in Fig. 1. A graphic LCD (128x64 pixels) is interfacedto the ARM LPC 2378 processor to display the temperature of the IC and the speed of the fan. A buzzer is also connected to the processor which gives an indication, in case of the failure of the fan or overheating of the chip beyond some level. The entire circuit diagram is shown in Fig. 2.Fig. 1.Block diagram.Fig. 2. Circuit Diagram.3. Software DescriptionThe present work is implemented using ARM IAR Workbench IDE and the necessary embedded C program is developed and dumped into the embedded processor using Flash magic ISP Utility. The ARM IAR Workbench IDE is a very powerful Integrated Development Environment (IDE) that allows you to develop and manage complete embedded application projects. In-System Programming is programming or reprogramming the on-chip flash memory, using the boot-loader software and a serial port. The LPC2387 microcontroller is based on a 16-bit/32-bit ARM7TDMI-S CPU with real-time emulation that combines the microcontroller with 512 kB of embedded high-speed flash memory.A 128-bit wide memory interface and unique accelerator architecture enable 32-bit code execution at the maximum clock rate. For critical performance in interrupt service routines and DSP algorithms, this increases performance up to 30 % over Thumb mode. For critical code size applications, the alternative 16-bit Thumb mode reduces code by more than 30 % with minimal performance penalty.The LPC2387 is ideal for multi-purpose serial communication applications. It incorporates a 10/100 Ethernet Media Access Controller (MAC), USB full speed device with 4 kB of endpoint RAM,four UARTs, two CAN channels, an SPI interface, two Synchronous Serial Ports (SSP), threeI2C interfaces, and an I2S interface. This blend of serial communications interfaces combined with an on-chip 4 MHz internal oscillator, 64 kB SRAM, 16 kB SRAM for Ethernet, 16 kB SRAM for USB and general purpose use, together with 2 kB battery powered SRAM makes this device very well suited for communication gateways and protocol converters. Various 32-bit timers, an improved 10-bit ADC, 10-bit DAC, one PWM unit, a CAN control unit, and up to 70 fast GPIO lines with up to 12 edge or level sensitive external interrupt pins make this microcontroller particularly suitable for industrial control and medical systems.The LPC2378 Microcontroller provides on-chip boot-loader software that allows programming of the internal flash memory over the serial channel. Philips provides a utility program for In-System programming called Flash magic Software.4. Results and ConclusionsEmbedded ARM processor based automatic speed control DC motor fan is designed and implemented.To test the validity of the design, the temperature sensor is kept inside a small oven and its temperature is increased beyond the room temperature. Now the fan is operated to run with full speed and the temperature is found to comeback to normal temperature. This is repeated with various VLSI chips like Pentium processor, FPGA chips etc. Now the temperature sensor is kept very near to the Pentium processor of the computer and it is observed that, as the time lapses the speed of the fan is automatically increased and the temperature of the chip is found to be controlled. These results are displayed on LCD panel. Though the present system is working well in the given environment, still it is worthwhile to highlight the following conclusions.Normally, controlling fan speed or clock throttling based on temperature requires that the temperature of the high speed chip should be first measured. This is done by placing a temperature sensor close to the target chip either directly next to it or in some cases, under it or on the heat sink. The temperature measured in this way corresponds to that of the high speed chip, but can be significantly lower and the difference between measured temperature and the actual die temperature increases as the power dissipation increases. So, the temperature of the circuit board or heat sink must be correlated to the die temperature of the high speed chip. Of course a better alternative is possible with a number of high speed chips. Many CPUs, FPGAs and other high speed ICs include a thermal diode which is actually a diode connected bipolar transistor, on the die. Using a remote diode temperature sensor connected to this thermal diode, the temperature of the high speed IC’s die can be measured directly with an excellent accuracy. This not only eliminates the large temperature gradients involved in measuring temperature outside the target IC’s package, but it also eliminates the long thermal time constants,from several seconds to minutes, that cause delays in responding to die temperature changes.There is also a drawback in fan speed control. Normally the fan speed iscontrolled by adjusting the power supply voltage of the fan. This is done by a low-frequency PWM signal, usually in the range of about 50 Hz, whose duty cycle is varied to adjust the fan’s speed. This is inexpensive and also efficient. But the disadvantage of this method is that it makes the fan somewhat nosier because of the pulsed nature of the power supply. The PWM waveforms fast edges cause the fans mechanical structure to move, which is easily audible.In some systems, it is also important to limit the rate of change of the fan speed. This is critical when the system is in close proximity to users. Simply switching a fan on and off or changing speed immediately as temperature changes is acceptable in some environments. But when users are in nearby, the sudden changes in fans noise are highly annoying. So to avoid these effects the fan’s drive signal must be limited to an acceptable level.5. Future Scope of the WorkIn the present work temperature is sensed using the temperature sensor LM35 and the speed of the motor is controlled by varying the width of PWM generated by the processor. But the temperature sensed by the IC LM35 is not very accurate even though we keep the IC very near to the processor orVLSI chip. So, we can use a remote diode temperature sensor connected to the thermal diode which measures the temperature of the high speed ICs directly with excellent accuracy.Another important aspect is a variety of remote temperature sensors with up to five sensing channels is available that can detect the die temperature of the high speed chip and transmit temperature data to a microcontroller.Fan speed regulators with multiple channels of fan tachometer monitoring can provide reliable control of fan RPM or supply voltage based on commands from an external microcontroller.For this simple ICs are provided by MAXIM MAX6660 and MAX6653. The first IC can sense the remote temperature and controls the fan speed based on that temperature. It produces a DC supply voltage for the fan through an internal power transistor. The second IC also performs a similar function but drives the fan with a PWM waveform through an external pass transistor. Both include complete thermalfault monitoring with over temperature outputs, which can be used to shut down the system if the high speed chips get too hot. So, the present work can be improved further by using the above mentioned techniques.基于嵌入式处理器的VLSI芯片的温度自动控制摘要本文介绍了基于嵌入式处理器的VLSI芯片的温度自动控制，同时利用温度传感器LM35和ARM处理器LPC2378来完成设计。
《微电子专业外语》课件
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《微电子专业外语》PPT课件
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Photolithography