MOSFET 内部培训资料(Silikron)

Power To Future 苏州硅能半导体科技股份有限公司SuZhou Silikron Semiconductor CorporationMOSFET Datasheet Parameter&Curve PresentationPDD30th Mar 2010outline•Power electronic systems•Power devices and application requirements•Power device technologies in Si (>99 % of market)-Power diodes These materials constitute confidential information of SILIKRON. These matrials may not be copied or -Thyristor -Bipolar Junction Transistors -Power MOSFET -Insulated Gate Bipolar Transistors (IGBT)Energy efficient power electronic systems•Electric power regulated using power electronics•Significant power losses in semiconductor devices•Device power losses should be minimized •Power devices and application requirements-to improve efficiency and save energy -to reduce system size (market driver)These materials constitute confidential information of SILIKRON. These matrials may not be copied or •Power device development: minimize power losses –whilefulfilling other requirementsPower electronic systemsThese materials constitute confidential information of SILIKRON. These matrials may not be copied or•Semiconductor devices key elements in power electronics •Global device market: 12B USD, growth rate ~ 11%Power semiconductor devices Power devices are switching transistors and diodesOne device per chip or one device per waferThese materials constitute confidential information of SILIKRON. These matrials may not be copied or •Power integrated circuits (Smart Power) also available•Power devices available for ~ 1 A –5,000 A and 30 V -10,000Device type:Planar MOSFETTrench MOSFETSuper Junction MOSFETIGBT: Isolation Gate Bipolar TransistorPower device structureTechnology trends: Rdson perspectiveThese materials constitute confidential information of SILIKRON. These matrials may not be copied orSuper JunctionTechnology trends: switching lossThese materials constitute confidential information of SILIKRON. These matrials may not be copied orVertical DMOS-device feature:Planar DMOS structure introduce:These materials constitute confidential information of SILIKRON. These matrials may not be copied or Check item afterassemblyWafer level check itemVertical DMOS-device feature-RdsonRdson: Rdson= R ch+RA+ Rsource+ RJ+ RD+ Rsub +RwcmlRsource = Source diffusion resistanceRch = Channel resistanceRA = Accumulation resistanceRJ = "JFET" component-resistance of the region between the two body regions RD = Drift region resistanceRsub = Substrate resistanceThese materials constitute confidential information of SILIKRON. These matrials may not be copied orProcess descriptionField oxide Active etch GR implantGR DRV JFET implantGate oxide Poly + Dope Poly etchPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.11Process descriptionBody implantBody DRV N+ Photo N+ implant N+ anneal LPTEOS Spacer etch P+ implantPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.12Process descriptionBPGS-CVD BPSG flow Contact Contact flow Metal sputter Metal Alloy Back grind Back Si etch Back metalPower To FutureTi+Ni+Ag13These materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.Absolute Maximum RatingsPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or SILIKRON Confidential distributed without written permission from SILIKRON.14Electrical Characteristics-1Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.15Electrical Characteristics-2Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.16Rdson vs. Vdss and Vdss vs. TC1. Vdss对温度具有正的温度系数，应用时应考虑最低的应用环境温度 2. 为减少器件的损耗，需要选择合适的Vdoss（保证雪崩耐量的电压即可） 其数值高时，Rdon也大，增加器件的损耗Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.17Vdss vs. Vgs此特性曲线反映的是在规定的工作 电流Id下，外加多少伏的栅极电压，可以 达到饱和的电压Vds(on)区（通态电阻区） *Vgs具有负温度系数，一般为-5mV/CPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.18Rdson vs. Tc1. Rdson具有正温度系数，即随温度升高， Rdson变大 2. Rdson随所加的栅极驱动电压Vgs升高， 而减小3. α=Rison(150C)/Rison(25C)，对100V以下的产品， α一般为1.7-2Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.19Input curveVgs具有负温度系数，即随温度 升高而减小Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.20Qg1. Qg为Vgs=XV电压下的栅极电荷总量 2. Qg与测试条件相关，不同的Vds得到不同的Qg 3. 高频特性时（f≥100KHZ）时，Qg是重要的考虑项These materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.21Power To FutureInternal Diode Between Drain and Source1. 此寄生二极管的额定电流值Idr与正 向 漏极电流额定值Id相同 2. 当栅极电压Vgs=0或负值时，与二极管 的特性相同； 当栅极电压Vgs为正值时，可以得 到更小的Vsd电压，此时Vsd=Idr*RdsPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.22SOA1. ①区受最大电流Id、Id（Pulse） 限制区域 2. ②区是受导通电阻最大（Rdson） 理论限制区，即 Id=Vds/Rdson 3. ③区受沟道损耗限制区域4. ④在连续运行或脉宽较长时，类 似晶体管二次击穿区 5. 域 ⑤区是受最大耐压Vds限制区Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.23Rjc此特性曲线是为计算器件在运行状态时的沟道温度Tch，横轴表示 脉宽PW时间，1shot single pulse（单脉冲）和反复运行的时间These materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.24Power To FutureEASPower To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.25ESDESD保护二 极管Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.26Power To FutureThanks!Power To FutureThese materials constitute confidential information of SILIKRON. These matrials may not be copied or distributed without written permission from SILIKRON.27。