韩国ATO公司产品介绍

To Be a World ClassTo Be a World Class Memory Solution ProviderSolution Provider MemoryMemory Solution Provider ATO Solution Co., LtdSolution Co., Ltd ATOJan 2013Jan2013About ATO Solution¾Efficient MCP Memory Solution ProviderSince established in 2007, ATO Solution has been growing as amemory MCP solution provider focusing on Digital Still Camera(DSC) application.ATO Solution has been recognized as one of the most reliable MCP memory f tTo Be The Best Partner For Your Memory Solutionmanufacturer.The 1Fab-less in NAND Flash memory industryFor Your Memory Solution ¾The 1st Fab-less in NAND Flash memory industry In 2012, ATO Solution successfully launched and started mass production for 256Mb, 512Mb SLC NAND Flash memory products, which were developed by its own design technology.ATO Solution expands SLC NAND product line-up by launching 1Gb SLC Flash memory within the Q1’2013.Corporate Core TechnologyThe effective NAND Flash Memory DesignP id d ffi i t M S l ti f t dOptimized NAND Flash Design &SPI Provided efficient Memory Solutions for customer needs Optimized NAND Flash Design & SPITo Be the Best Partner for Memory Solution To Be the Best Partner for Memory SolutionNAND/DRAM MCPNAND SPI(patented)Low Density NANDCompany OutlineOrganizationCEO Chris Park EstablishedOctober 31, 2007CEOHeadquarter705 Loadland EZ Tower, 153 Gumi-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, Korea AdvisorV. Presidenty gg ,Product NAND FlashMCP (NAND+DRAM)13M USD R&D ProductionSupport Sales & Marketing Financial Account QualityCapital 1.3M USD Employees 41peoples Design Prod. Eng’rQuality Management Production Management PurchasingKorea Taiwan ChinaHR IRRevenue 24.3M USD (2012)Web Site2013Mass production start for own 1Gb SLC NAND Flash in Q1Mass production start for own 256Mb/512Mb SLC NAND Flash2012Started consumer MCP delivery for Altek /PentaxStarted own SLC NAND Flash delivery for Ability / Fuji-film 2009~2011Start consumer MCP delivery for SDIC (Samsung Digital Imaging Co.) Mobile MCP registered on Spreadtrum 2G/3G platforms New business started with Asia Optical Flextronics Selected as “Company with Good technology”by Korean Government New business started with Asia Optical Flextronics Development start for SLC NAND Flash (256Mb/512Mb)2008 Company EstablishedSelected as Company with Good technology by Korean Government Acquired ISO9001:2000, ISO14001:20042007Biz start with Foxconn , MCP for Digital Still CameraBusiness Milestone1.Early Positioning with Consumer MCP 2The 1Fab less for NAND Flash Memory2.The 1st Fab-less for NAND Flash Memory3.New innovative solution ; SPI NAND Flash MemoryPhase II ; Low Density NandPhase III ; Nand based SPIProvide NAND-cell based Phase I ; Market Solution Provided Memory Solution Low Density NAND Flash Memory Development & Marketing for Consumer & SPI Flash for PC, Mobile, and Consumer MarketProvided Memory Solution ; MCP for Consumer Marketg Mobile Market`2007`2008`2009`2010`2011`2012`2013`2014`2015Phase I ; MCP Solution for ConsumerPartners CustomersMARKETING /QUALITY SERVICETAM : ~150M set / yearPhase II ; Low Density NAND Flash9IDMs are focusing on high density NAND Flash Memory-Capacity and Technology drivenMarket still needs continuous high reliable product and serviceHigh Competition ply9Market still needs continuous high reliable product and serviceamong MajorSuppliers and/SupDemUnstable supply& Continuous demandSupplyATO Solution’sTarget Marketpp yDemandSuppliers Move256Mb512Mb1Gb2Gb4Gb Density8Gb16GbEdge in design competiveness¾Die Size Comparison TableP d tCDi Si (2)W/FR ti Product Company Die Size (mm2)Tech(nm)W/F Size Ratio 256Mb H35.82908” 2.7435828”274(1.8V/3.3V)M 35.82908 2.74S(EOL)37.449012” 2.86ATO Solution13.07578”1512Mb (1.8V/3.3V)H33.11578” 1.58S 38.476312” 1.85T 29.634312” 1.42ATO Solution20.85578”11Gb (33V)H 30.994812” 1.093090109(3.3V)For 1bit ECCP 30.975012” 1.09ATO Solution28.22578”1Market Outlook _ WW SLC NAND Flash FCST (Consumer)K unit500,000 600,000 128Mb256Mb 512Mb 1Gb 2Gb 4Gb 8Gb200,000 300,000 400,000 Source : Forward Insight (2012. Sep)-100,00020112012201320142015 2016Total Consumer Demand byDensity (kUnits)2011 2012 2013 2014 2015 2016 CAGR<128Mb ------128Mb 6,119 5,074 4,089 2,144 --44145315301900152591925256Mb 44,145 31,530 19,001 5,259 1,925 -512Mb 114,519 96,382 75,177 59,212 47,661 30,157 -23.4%1Gb 147,898 154,362 161,864 167,566 179,001 187,513 4.9%2Gb 109,268 104,836 107,999 112,413 119,733 130,192 3.6%4Gb 54,644 54,906 61,917 73,858 85,309 95,797 11.9%757910037145912164430677411528Gb7,579 10,037 14,591 21,644 30,677 41,152Total (128Mb-8Gb)484,173 457,127 444,637 442,096 464,306 484,812 0.0%¾Global SLC NAND FCST in digital consumer market is estimated as a quite flat.Market Outlook _ WW Mobile Phone FCST2500Smartphone Mid-End Feature Phone Low-End Feature Phone206%1500200025.9%22.3%15.2%23.3%10.2%21.9% 6.7%20.6%358%24.7%26.1%0500100051.7%61.5%67.9%72.7%39.5%35.8%29.5%44.4%2011 2012 2013 2014 2015 2016Source : Forward Insight (2012. Sep)Mobile phone unit forecast (M Units)2,0 11 2,012 2,013 2,014 2,015 2,016 CAGRS t h 471658901112713551566272%Smartphone 471 658 901 1,127 1,355 1,566 27.2%Mid-End Feature Phone 710 596 452 278 203 144 -27.3%Low-End Feature Phone 418 411 389 427 437 444 1.2%¾Global total mobile phone unit shipments will reach to 1.7 billion units in 2013.¾Feature phone have the larger share in 2012 mobile market but its trend is expected to change after 2013Mobile Phones Units 1,599 1,665 1,742 1,832 1,995 2,154 6.1%when smart-phone will take over it.Brief Specification _ 256Mb / 512Mb / 1GbFEATURES DESCRIPTIONDensity 256Mb 512Mb 1GbArchitecture Single-Level CellPower Supply 1.8V: 1.7V ~ 1.95V / 3.3V: 2.7V ~ 3.6V 3.3V: 2.7V ~ 3.6VMemory Cell Array x8 : (32M + 1024K) x 8bits x16 : (16M + 512K) x 16bits x8 : (64M + 2M) x 8bitsX16 : (32M + 1M) x 16bits x8 : (128M + 4M) x 8bitsPage Size x8:(512 + 16)Bytes / x16:(256 + 8)Words x8:(2K + 64)BytesRandom Access 15us(1.8V) / 12us(3.3V)25usSerial Page Access 50ns(1.8V) / 30ns(3.3V)25nsProgram / Block EraseTime 200us(Typ) / 2ms(Typ)Copy Back ProgramOperation Fast Page copy without external bufferingOTP area 16Kbytes/8K words(32 pages)16Kbytes(8 pages)Hardware Data Protection Program / Erase locked during Power transitionsEndurance /Data100K P /E C l ith 1bit ECC /10Endurance / Data Retention 100K Program / Erase Cycles with 1bit ECC / 10years Temperature Range 0℃to +70℃/ -40℃to +85℃P k I f ti 48P TSOP (1220)/48B fBGA (99)48P TSOP (12x20mm)fBGA (9x9mm)Package Information 48P TSOP (12x20mm)/ 48B fBGA (9x9mm)48B fBGA (9x9mm)48B fBGA (6.5x8mm)Phase III ; SPI NAND Flash1Gb (SPI, Quad IO), 3.3V, 104Mhz(133Mhz@15pF), 8x6 WSON -Very high reliability,competitive cost,simpler package form factorHigh VoltageHOLD#Very high reliability, competitive cost, simpler package form factorControl Logic GeneratorI/O Shift RegisterW#CS#SCLKSISOECCGeneratorSPI InterfaceAddress Registerand Counter2K Bytes Data Buffer StatusRegister7FFFFFFh7FE0000hEmbedded ECCX DecoderEmbedded ECCY Decoder0000000h001FFFFhNAND Cell ArraySLC NAND Flash Product Roadmap 20132014ES CS MP Q1Q2Q3Q4Q1Q2Q3Q41.8V/3.3V256Mb 32Mx8 / 16Mx16Small Block TSOP/BGA/MCP1.8V / 3.3V512Mb 1.8V/3.3V64Mx8 / 32Mx16Small Block TSOP/BGA/MCP1.8V / 3.3V1Gb 3.3V128Mx8Large Block 3.3VTSOP/BGA/MCPNOTE) Endurance(256Mb/512Mb/1Gb) : 100K Program/Erase Cycles (with 1bit/528byte ECC)SLC NAND Flash Product Roadmap –cont’20132014ES CS MPQ1Q2Q3Q4Q1Q2Q3Q42Gb 1.8V/3.3V 256Mx8 / 128Mx16Large Block TBDLarge Block4Gb 1.8V/3.3V 512Mx8 / 256Mx16Large Block TBDNOTE) Endurance(2Gb/4Gb) : 100K Program/Erase Cycles (with 4bit/528byte ECC)Serial NAND Flash Product Roadmap20132014 ES CS MPQ1Q2Q3Q4Q1Q2Q3Q4 33V1Gb3.3V(128M+4M)x Bytes104MHzInternal ECC codeti3.3VgenerationWSON/SOP104MHzInternal ECC code2Gb/4GbgenerationTBD NOTE) Endurance : 100K Program/Erase CyclesCertificationsISO9001 : 2008• Oct 02, 2008 Acquired ISO9001ISO14001 : 2004• Oct 02, 2008 Acquired ISO14001Eco-Partner• Feb 09, 2009 Acquired Eco-Partner Di i i C tifi t N R i t ti D t E i d D t SDivision Certificate No.Registration Date Expired Date Sponsor ISO9001: 2008QI8221/082008.102013.11ICRISO14001:2004EI3363/082008.102013.11ICREco-Partner EPC-52452009.02-SAMSUNGco a t e C55009.0S SU GSummary ; Core Competencies Leading edge NAND Memory technology •High level of NAND Flash design experience and capability for optimized architecture D i d D l t C bilit fk ith li bl lit•Design and Development Capability of new packages with reliable quality •Market leading test technology, which is core factor of MCP quality•Stable quality control through field-proven management systemS l ti h ld i t d d li d IP f d Strategic relationship with Supply-ChainStable support with Strategic relationshipATO Solution holds 6registered and 6applied IPs for NAND and NAND SPI •Stable support with Strategic relationship Optimized operation and organization focusing on customer service•Simplified and optimized operation and logistics, which are result in reasonable lead time and customer service Memory specialized human resources•Key Engineering Resources are all from Major Memory Companies with 11+ years experience-Memory : Hynix, Samsung, STMicroelectronics(Numonyx), SMIC-Packaging : Stats ChipPAC, Amkor, Winpac-Test : iTEST, HisemFlexible and dynamic customer service•Customer Specific design and technical solutionThank you for your attention. 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