DESIGN OF GOOD LOW-DENSITY PARITY-CHECK CODES FOR BLOCK FADING CHANNELS
伊士曼Tritan材料介绍

Eastman Chemical Company – Restricted Information
Features and benefits of Eastman Tritan™ copolyester
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Eastman Chemical Company – Restricted Information
Eastman Tritan™ copolyester value proposition
CLARITY – balancing lively aesthetics and long-lived performance
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关于下层初效压差英文缩写的文章

关于下层初效压差英文缩写的文章Title: Understanding the Initial Pressure Dropin Subfloor Air Distribution SystemsIntroduction:\nSubfloor air distribution systems (UFAD) have gained popularity in recent years due to their energy efficiency and improved indoor air quality. One crucial aspect of UFAD systems is the initial pressure drop, also known as the initial static pressure, which refers to the resistance encountered by air as it passes through the subfloor plenum and diffusers. In this article, we will explore the significance of the initial pressure drop in UFAD systems and its impact on overall system performance.The Initial Pressure Drop:\nThe initial pressure drop is a critical parameter that determines the effectiveness of a UFAD system. It is primarily influenced by factors such as subfloor plenum design, diffuser type, and airflow rate. The pressure drop occurs due to frictional losses asair flows through narrow passages, bends, and diffusers. Understanding and managing this pressure drop is essential for ensuring optimal airflow distribution throughout the occupied space.Importance of Managing Initial PressureDrop:\nEfficient management of the initial pressure drop is crucial for several reasons. Firstly, a high initial pressure drop can lead to reduced airflow rates in certain areas of the space,resulting in inadequate ventilation and discomfort for occupants. Secondly, excessive pressure drop can increase fan energy consumption, leading to higher operational costs. Lastly, an unbalanced pressure distribution can cause uneven temperature distribution within the space.Strategies for Managing Initial PressureDrop:\nSeveral strategies can be employed to manage and minimize the initial pressure drop in UFAD systems:1. Proper Subfloor Plenum Design: The design of the subfloor plenum should consider factors such as plenum height, size, and layout to minimize resistance to airflow. Smooth transitions between plenum sections should be ensured to reduce turbulence.2. Diffuser Selection: The choice of diffusers plays a significant role in managing pressure drop. Diffusers with low-pressure drops should be selected while considering factors such as diffuser type, size, and location.3. Airflow Rate Optimization: Properly sizing the airflow rate is crucial to maintain an acceptable pressure drop. Oversizing or undersizing the airflow rate can lead to increased pressure drop and inefficient system performance.4. Regular Maintenance: Regular maintenance of the UFAD system, including cleaning diffusers and filters, is essential to prevent blockages andmaintain optimal airflow rates.Conclusion:\nThe initial pressure drop in subfloor air distribution systems is a critical factor that affects the performance and efficiency of UFAD systems. By understanding and managing this pressure drop through proper design, diffuser selection, airflow rate optimization, and regular maintenance, building owners can ensure a comfortable indoor environment with improved energy efficiency.。
半导体制造技术

Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons(不带电的中子), positively charged protons(带正电的质子)in the nucleus and negatively charged electrons(带负电的核外电子) that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally(无心的) turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier(隔离阻障)is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。
土木工程常用必备英语词汇

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环境恶化environmental degradation 环境工程学environmental engineering 基础设施infrastructure基础体系foundation system基础托换、基础加固underpinning offoundation基础问题elementary problems基于based on计算机辅助设计computer-aided design剪切强度shearing strength建造、施工construction建筑工程学规划constructionengineering建筑规范building codes建筑物,构筑物structure交通工程专家transportationspecialists交通拥堵traffic congestion交通运输工程transportationengineering结构工程structural engineering结构工程专家structural specialists结构扰动structural disturbance结合、组合combination经济发展economic development精细的elaborate聚合物aggregate开挖excavate/excavation开展室内试验performing laboratorytest开展土力学实验perform soilexperiments颗粒尺寸grain size可靠的,可信懒的dependable困境dilemma扩展基础spread foundation理论的应用application of theory连续基础continuous footing联合基础combined footing灵活性、柔性flexible流速rate of flow流体静力学hydrostatic路基材料、地基材料subgrade materials毛细性capillarity密度density明显的进步considerable progress模板forms摩擦阻力frictional resistance内摩擦力internal friction泥浆slurries排水系统drainage system膨胀土expansive soil平板基础slab foundations平衡equilibrium评价、评估evaluate破坏,恶化degrade破坏、失效failure破裂rupture强度strength确保ensureplanning渗透性permeability渗透性permeability施工管理专家construction managementspecialists施工现场construction sites使排水、脱水dewater试验数据experimental data适应,容纳accommodate适用性suitability水利发电的、水电的hydroelectric水利工程学hydraulic engineering水泥;结合剂cement水气moisture素混凝土plain concrete塑性plasticity隧道tunnel土的参数、特性soil characteristic土力学soil mechanics土木工程civil engineering土木工程师civil engineer土压力理论theory of earth pressure为…细分..subdivided into卫生填埋sanitary landfills稳定(性),稳固;stability无效率的inefficient物理特性physical properties下部结构substructure箱型基础caisson消除污染eliminate pollution消遣,娱乐recreational悬臂基础cantilever footing压力pressure压缩性compressibility岩土工程学geotechnical engineering岩土工程专家geotechnical specialists研究生和本科生graduate andundergraduate students液限和塑限liquid and plastic limits易燃的、可燃的combustible有希望的,有前途的promising与….对抗versus预想,设想envision源于stems from远远,不仅仅far more than遭受(荷载、力等)subjected to粘聚力cohesion振动vibration止水帷幕cutoff wall住宅的、居住的residential专业、专长specialty砖brick桩帽,承台pile cap总体视野、全面思想comprehensive vision组成、成分composition钻孔borehole钻孔试验drilling test钻探方法drilling methodsground water地下水rock岩石sand砂子settlement沉降shale页岩clay粘土tunnel隧道sewer line下水道线路metro地铁seismic 地震boring钻孔,penetration test 贯入试验testpit试坑pressuremetertest 旁压仪试验plateloadtest平板载荷试验,cone penetration Test 圆锥贯入试验Standard penetration test标准贯入试验Weight sounding test重量探测试验geopbone地震检波器heave隆起,flow line流线equipotential line等势线settlement, 沉降failure surface破坏面fow net流网failure surface破坏面differential settlement差异沉降cracks 裂缝active earth pressure主动土压力retaining wall 挡土墙sheet pile板桩,anchor锚vertical component竖向分量anchored sheet pile walls锚碇板桩墙concrete element 混凝土构件steel strip钢条aluminium strip铝条strut支撑lateral earth pressure侧向土压力, sheet pile板桩,bottom heave底部隆起concrete pile混凝土桩steel pile 钢桩timber pile木桩point resistance桩端阻力skin resistance桩侧阻力ultimate resistance极限阻力settlement沉降soft clay软粘土void ratio孔隙比porosity 孔隙率water content 含水率unit weight 容重dry unit weight干容量unit weight f solid固体容重specific gravity 比重degree of saturation饱和度gas 气water水solid固体liquid limit液限low plasticity低液限medium plasticity高液限A-line A线clay 粘土silt粉土plasticity index塑性指数shrinkage limit收缩界限semi solid半固体plastic 塑性liquid液体coefficient of permeability渗透系数hydraulic gradient水力梯度flow流动gross area过水面积effective stress有效应力pore water pressure孔隙水压力total stress总应力stress应力 strain应变secant modulus割线模量ultimate stress极限应力stress-strain relationship应力-应变关系poisson’s ratio泊松比modulus of elasticity弹性模量shear stress剪应力shear modulus剪切模量shear deformation剪切变形coefficient of lateral earth pressureat rest侧向静止土压力系数compression modulus压缩模量shear strength抗剪强度failure surface 破坏面attraction内在压力cohesion内聚力shear strength抗剪强度normal stress法向应力shear stress剪应力failure surface破坏面normal stress法向应力friction angle 摩擦角cohesion内聚力Mohr’s stress circle摩尔圆gravel砾石sand砂土silt 粉土clay粘土relative density相对密度angularity棱角度gradation级配particle size粒径direct shear test直剪试验triaxial test 三轴试验unconfined compression test无侧限压缩实验Fall cone test落锥实验Vane test十字板试验表明indicate不均质性、异质性heterogeneity测量、调查survey测量员surveyors场地调查site investigation沉淀、下沉subside沉积物deposits沉降settlement成比例的proportionately承受withstand城镇化urbanization持支撑support 支触发点,扳机trigger传播速度propagation velocity传递荷载transfer load大坝dams大量使用make extensive use of代表性土样representative samples of soils弹性elasticity挡土墙retaining wall地基梁grade beam地理勘探geophysical exploration地面the ground surface地铁线subway line地图绘制mapping地下空间开发underground space utilization地下设施underground facility地下室basement地下水位线the groundwater level地下水污染groundwater pollution地震技术seismic techniques地质构成geologic formation冻融循环freezing-thawing cycle独立基础footing浮式基础floating foundations副产品by-products改善环境improving the environment干湿循环wetting-drying cycle钢筋steel钢筋混凝土reinforced concrete各种,所有方面all aspects of工程管理engineering management公共交通mass transit公共设施utility固结consolidation管道工程学pipeline engineering管线pipeline国家高速运输体系high-speed national transportation systems海岸工程、海洋工程offshore projects 海港harbor洪水灾害floods护堤、路堤embankments滑动剪切特性shearing characteristics 环境恶化environmental degradation 环境工程学environmental engineering 基础设施infrastructure基础体系foundation system基础托换、基础加固underpinning offoundation基础问题elementary problems基于based on计算机辅助设计computer-aided design剪切强度shearing strength建造、施工construction建筑工程学规划constructionengineering建筑规范building codes建筑物,构筑物structure交通工程专家transportationspecialists交通拥堵traffic congestion交通运输工程transportationengineering结构工程structural engineering结构工程专家structural specialists结构扰动structural disturbance结合、组合combination经济发展economic development精细的elaborate聚合物aggregate开挖excavate/excavation开展室内试验performing laboratorytest开展土力学实验perform soilexperiments颗粒尺寸grain size可靠的,可信懒的dependable困境dilemma扩展基础spread foundation理论的应用application of theory连续基础continuous footing联合基础combined footing灵活性、柔性flexible流速rate of flow流体静力学hydrostatic路基材料、地基材料subgrade materials毛细性capillarity密度density明显的进步considerable progress模板forms摩擦阻力frictional resistance内摩擦力internal friction泥浆slurries排水系统drainage system膨胀土expansive soil平板基础slab foundations平衡equilibrium评价、评估evaluate破坏,恶化degrade破坏、失效failure破裂rupture强度strength确保ensureplanning渗透性permeability渗透性permeability施工管理专家construction managementspecialists施工现场construction sites使排水、脱水dewater试验数据experimental data适应,容纳accommodate适用性suitability水利发电的、水电的hydroelectric水利工程学hydraulic engineering水泥;结合剂cement水气moisture素混凝土plain concrete塑性plasticity隧道tunnel土的参数、特性soil characteristic土力学soil mechanics土木工程civil engineering土木工程师civil engineer土压力理论theory of earth pressure为…细分..subdivided into卫生填埋sanitary landfills稳定(性),稳固;stability无效率的inefficient物理特性physical properties下部结构substructure箱型基础caisson消除污染eliminate pollution消遣,娱乐recreational悬臂基础cantilever footing压力pressure压缩性compressibility岩土工程学geotechnical engineering岩土工程专家geotechnical specialists研究生和本科生graduate andundergraduate students液限和塑限liquid and plastic limits易燃的、可燃的combustible有希望的,有前途的promising与….对抗versus预想,设想envision源于stems from远远,不仅仅far more than遭受(荷载、力等)subjected to粘聚力cohesion振动vibration止水帷幕cutoff wall住宅的、居住的residential专业、专长specialty砖brick桩帽,承台pile cap总体视野、全面思想comprehensive vision组成、成分composition钻孔borehole钻孔试验drilling test钻探方法drilling methodsground water地下水rock岩石sand砂子settlement沉降shale页岩clay粘土tunnel隧道sewer line下水道线路metro地铁seismic 地震boring钻孔,penetration test 贯入试验testpit试坑pressuremetertest 旁压仪试验plateloadtest平板载荷试验,cone penetration Test 圆锥贯入试验Standard penetration test标准贯入试验Weight sounding test重量探测试验geopbone地震检波器heave隆起,flow line流线equipotential line等势线settlement, 沉降failure surface破坏面fow net流网failure surface破坏面differential settlement差异沉降cracks 裂缝active earth pressure主动土压力retaining wall 挡土墙sheet pile板桩,anchor锚vertical component竖向分量anchored sheet pile walls锚碇板桩墙concrete element 混凝土构件steel strip钢条aluminium strip铝条strut支撑lateral earth pressure侧向土压力, sheet pile板桩,bottom heave底部隆起concrete pile混凝土桩steel pile 钢桩timber pile木桩point resistance桩端阻力skin resistance桩侧阻力ultimate resistance极限阻力settlement沉降soft clay软粘土void ratio孔隙比porosity 孔隙率water content 含水率unit weight 容重dry unit weight干容量unit weight f solid固体容重specific gravity 比重degree of saturation饱和度gas 气water水solid固体liquid limit液限low plasticity低液限medium plasticity高液限A-line A线clay 粘土silt粉土plasticity index塑性指数shrinkage limit收缩界限semi solid半固体plastic 塑性liquid液体coefficient of permeability渗透系数hydraulic gradient水力梯度flow流动gross area过水面积effective stress有效应力pore water pressure孔隙水压力total stress总应力stress应力 strain应变secant modulus割线模量ultimate stress极限应力stress-strain relationship应力-应变关系poisson’s ratio泊松比modulus of elasticity弹性模量shear stress剪应力shear modulus剪切模量shear deformation剪切变形coefficient of lateral earth pressureat rest侧向静止土压力系数compression modulus压缩模量shear strength抗剪强度failure surface 破坏面attraction内在压力cohesion内聚力shear strength抗剪强度normal stress法向应力shear stress剪应力failure surface破坏面normal stress法向应力friction angle 摩擦角cohesion内聚力Mohr’s stress circle摩尔圆gravel砾石sand砂土silt 粉土clay粘土relative density相对密度angularity棱角度gradation级配particle size粒径direct shear test直剪试验triaxial test 三轴试验unconfined compression test无侧限压缩实验Fall cone test落锥实验Vane test十字板试验表明indicate不均质性、异质性heterogeneity测量、调查survey测量员surveyors场地调查site investigation沉淀、下沉subside沉积物deposits沉降settlement成比例的proportionately承受withstand城镇化urbanization持支撑support 支触发点,扳机trigger传播速度propagation velocity传递荷载transfer load大坝dams大量使用make extensive use of代表性土样representative samples of soils弹性elasticity挡土墙retaining wall地基梁grade beam地理勘探geophysical exploration地面the ground surface地铁线subway line地图绘制mapping地下空间开发underground space utilization地下设施underground facility地下室basement地下水位线the groundwater level地下水污染groundwater pollution地震技术seismic techniques地质构成geologic formation冻融循环freezing-thawing cycle独立基础footing浮式基础floating foundations副产品by-products改善环境improving the environment干湿循环wetting-drying cycle钢筋steel钢筋混凝土reinforced concrete各种,所有方面all aspects of工程管理engineering management公共交通mass transit公共设施utility固结consolidation管道工程学pipeline engineering管线pipeline国家高速运输体系high-speed national transportation systems海岸工程、海洋工程offshore projects 海港harbor洪水灾害floods护堤、路堤embankments滑动剪切特性shearing characteristics 环境恶化environmental degradation 环境工程学environmental engineering 基础设施infrastructure基础体系foundation system基础托换、基础加固underpinning offoundation基础问题elementary problems基于based on计算机辅助设计computer-aided design剪切强度shearing strength建造、施工construction建筑工程学规划constructionengineering建筑规范building codes建筑物,构筑物structure交通工程专家transportationspecialists交通拥堵traffic congestion交通运输工程transportationengineering结构工程structural engineering结构工程专家structural specialists结构扰动structural disturbance结合、组合combination经济发展economic development精细的elaborate聚合物aggregate开挖excavate/excavation开展室内试验performing laboratorytest开展土力学实验perform soilexperiments颗粒尺寸grain size可靠的,可信懒的dependable困境dilemma扩展基础spread foundation理论的应用application of theory连续基础continuous footing联合基础combined footing灵活性、柔性flexible流速rate of flow流体静力学hydrostatic路基材料、地基材料subgrade materials毛细性capillarity密度density明显的进步considerable progress模板forms摩擦阻力frictional resistance内摩擦力internal friction泥浆slurries排水系统drainage system膨胀土expansive soil平板基础slab foundations平衡equilibrium评价、评估evaluate破坏,恶化degrade破坏、失效failure破裂rupture强度strength确保ensureplanning渗透性permeability渗透性permeability施工管理专家construction managementspecialists施工现场construction sites使排水、脱水dewater试验数据experimental data适应,容纳accommodate适用性suitability水利发电的、水电的hydroelectric水利工程学hydraulic engineering水泥;结合剂cement水气moisture素混凝土plain concrete塑性plasticity隧道tunnel土的参数、特性soil characteristic土力学soil mechanics土木工程civil engineering土木工程师civil engineer土压力理论theory of earth pressure为…细分..subdivided into卫生填埋sanitary landfills稳定(性),稳固;stability无效率的inefficient物理特性physical properties下部结构substructure箱型基础caisson消除污染eliminate pollution消遣,娱乐recreational悬臂基础cantilever footing压力pressure压缩性compressibility岩土工程学geotechnical engineering岩土工程专家geotechnical specialists研究生和本科生graduate andundergraduate students液限和塑限liquid and plastic limits易燃的、可燃的combustible有希望的,有前途的promising与….对抗versus预想,设想envision源于stems from远远,不仅仅far more than遭受(荷载、力等)subjected to粘聚力cohesion振动vibration止水帷幕cutoff wall住宅的、居住的residential专业、专长specialty砖brick桩帽,承台pile cap总体视野、全面思想comprehensive vision组成、成分composition钻孔borehole钻孔试验drilling test钻探方法drilling methodsground water地下水rock岩石sand砂子settlement沉降shale页岩clay粘土tunnel隧道sewer line下水道线路metro地铁seismic 地震boring钻孔,penetration test 贯入试验testpit试坑pressuremetertest 旁压仪试验plateloadtest平板载荷试验,cone penetration Test 圆锥贯入试验Standard penetration test标准贯入试验Weight sounding test重量探测试验geopbone地震检波器heave隆起,flow line流线equipotential line等势线settlement, 沉降failure surface破坏面fow net流网failure surface破坏面differential settlement差异沉降cracks 裂缝active earth pressure主动土压力retaining wall 挡土墙sheet pile板桩,anchor锚vertical component竖向分量anchored sheet pile walls锚碇板桩墙concrete element 混凝土构件steel strip钢条aluminium strip铝条strut支撑lateral earth pressure侧向土压力, sheet pile板桩,bottom heave底部隆起concrete pile混凝土桩steel pile 钢桩timber pile木桩point resistance桩端阻力skin resistance桩侧阻力ultimate resistance极限阻力settlement沉降soft clay软粘土void ratio孔隙比porosity 孔隙率water content 含水率unit weight 容重dry unit weight干容量unit weight f solid固体容重specific gravity 比重degree of saturation饱和度gas 气water水solid固体liquid limit液限low plasticity低液限medium plasticity高液限A-line A线clay 粘土silt粉土plasticity index塑性指数shrinkage limit收缩界限semi solid半固体plastic 塑性liquid液体coefficient of permeability渗透系数hydraulic gradient水力梯度flow流动gross area过水面积effective stress有效应力pore water pressure孔隙水压力total stress总应力stress应力 strain应变secant modulus割线模量ultimate stress极限应力stress-strain relationship应力-应变关系poisson’s ratio泊松比modulus of elasticity弹性模量shear stress剪应力shear modulus剪切模量shear deformation剪切变形coefficient of lateral earth pressureat rest侧向静止土压力系数compression modulus压缩模量shear strength抗剪强度failure surface 破坏面attraction内在压力cohesion内聚力shear strength抗剪强度normal stress法向应力shear stress剪应力failure surface破坏面normal stress法向应力friction angle 摩擦角cohesion内聚力Mohr’s stress circle摩尔圆gravel砾石sand砂土silt 粉土clay粘土relative density相对密度angularity棱角度gradation级配particle size粒径direct shear test直剪试验triaxial test 三轴试验unconfined compression test无侧限压缩实验Fall cone test落锥实验Vane test十字板试验表明indicate不均质性、异质性heterogeneity测量、调查survey测量员surveyors场地调查site investigation沉淀、下沉subside沉积物deposits沉降settlement成比例的proportionately承受withstand城镇化urbanization持支撑support 支触发点,扳机trigger传播速度propagation velocity传递荷载transfer load大坝dams大量使用make extensive use of代表性土样representative samples of soils弹性elasticity挡土墙retaining wall地基梁grade beam地理勘探geophysical exploration地面the ground surface地铁线subway line地图绘制mapping地下空间开发underground space utilization地下设施underground facility地下室basement地下水位线the groundwater level地下水污染groundwater pollution地震技术seismic techniques地质构成geologic formation冻融循环freezing-thawing cycle独立基础footing浮式基础floating foundations副产品by-products改善环境improving the environment干湿循环wetting-drying cycle钢筋steel钢筋混凝土reinforced concrete各种,所有方面all aspects of工程管理engineering management公共交通mass transit公共设施utility固结consolidation管道工程学pipeline engineering管线pipeline国家高速运输体系high-speed national transportation systems海岸工程、海洋工程offshore projects 海港harbor洪水灾害floods护堤、路堤embankments滑动剪切特性shearing characteristics 环境恶化environmental degradation 环境工程学environmental engineering 基础设施infrastructure基础体系foundation system基础托换、基础加固underpinning offoundation基础问题elementary problems基于based on计算机辅助设计computer-aided design剪切强度shearing strength建造、施工construction建筑工程学规划constructionengineering建筑规范building codes建筑物,构筑物structure交通工程专家transportationspecialists交通拥堵traffic congestion交通运输工程transportationengineering结构工程structural engineering结构工程专家structural specialists结构扰动structural disturbance结合、组合combination经济发展economic development精细的elaborate聚合物aggregate开挖excavate/excavation开展室内试验performing laboratorytest开展土力学实验perform soilexperiments颗粒尺寸grain size可靠的,可信懒的dependable困境dilemma扩展基础spread foundation理论的应用application of theory连续基础continuous footing联合基础combined footing灵活性、柔性flexible流速rate of flow流体静力学hydrostatic路基材料、地基材料subgrade materials毛细性capillarity密度density明显的进步considerable progress模板forms摩擦阻力frictional resistance内摩擦力internal friction泥浆slurries排水系统drainage system膨胀土expansive soil平板基础slab foundations平衡equilibrium评价、评估evaluate破坏,恶化degrade破坏、失效failure破裂rupture强度strength确保ensureplanning渗透性permeability渗透性permeability施工管理专家construction managementspecialists施工现场construction sites使排水、脱水dewater试验数据experimental data适应,容纳accommodate适用性suitability水利发电的、水电的hydroelectric水利工程学hydraulic engineering水泥;结合剂cement水气moisture素混凝土plain concrete塑性plasticity隧道tunnel土的参数、特性soil characteristic土力学soil mechanics土木工程civil engineering土木工程师civil engineer土压力理论theory of earth pressure为…细分..subdivided into卫生填埋sanitary landfills稳定(性),稳固;stability无效率的inefficient物理特性physical properties下部结构substructure箱型基础caisson消除污染eliminate pollution消遣,娱乐recreational悬臂基础cantilever footing压力pressure压缩性compressibility岩土工程学geotechnical engineering岩土工程专家geotechnical specialists研究生和本科生graduate andundergraduate students液限和塑限liquid and plastic limits易燃的、可燃的combustible有希望的,有前途的promising与….对抗versus预想,设想envision源于stems from远远,不仅仅far more than遭受(荷载、力等)subjected to粘聚力cohesion振动vibration止水帷幕cutoff wall住宅的、居住的residential专业、专长specialty砖brick桩帽,承台pile cap总体视野、全面思想comprehensive vision组成、成分composition钻孔borehole钻孔试验drilling test钻探方法drilling methodsground water地下水rock岩石sand砂子settlement沉降shale页岩clay粘土tunnel隧道sewer line下水道线路metro地铁seismic 地震boring钻孔,penetration test 贯入试验testpit试坑pressuremetertest 旁压仪试验plateloadtest平板载荷试验,cone penetration Test 圆锥贯入试验Standard penetration test标准贯入试验Weight sounding test重量探测试验geopbone地震检波器heave隆起,flow line流线equipotential line等势线settlement, 沉降failure surface破坏面fow net流网failure surface破坏面differential settlement差异沉降cracks 裂缝active earth pressure主动土压力retaining wall 挡土墙sheet pile板桩,anchor锚vertical component竖向分量anchored sheet pile walls锚碇板桩墙concrete element 混凝土构件steel strip钢条aluminium strip铝条strut支撑lateral earth pressure侧向土压力, sheet pile板桩,bottom heave底部隆起concrete pile混凝土桩steel pile 钢桩timber pile木桩point resistance桩端阻力skin resistance桩侧阻力ultimate resistance极限阻力settlement沉降soft clay软粘土void ratio孔隙比porosity 孔隙率water content 含水率unit weight 容重dry unit weight干容量unit weight f solid固体容重specific gravity 比重degree of saturation饱和度gas 气water水solid固体liquid limit液限low plasticity低液限medium plasticity高液限A-line A线clay 粘土silt粉土plasticity index塑性指数shrinkage limit收缩界限semi solid半固体plastic 塑性liquid液体coefficient of permeability渗透系数hydraulic gradient水力梯度flow流动gross area过水面积effective stress有效应力pore water pressure孔隙水压力total stress总应力stress应力 strain应变secant modulus割线模量ultimate stress极限应力stress-strain relationship应力-应变关系poisson’s ratio泊松比modulus of elasticity弹性模量shear stress剪应力shear modulus剪切模量shear deformation剪切变形coefficient of lateral earth pressureat rest侧向静止土压力系数compression modulus压缩模量shear strength抗剪强度failure surface 破坏面attraction内在压力cohesion内聚力shear strength抗剪强度normal stress法向应力shear stress剪应力failure surface破坏面normal stress法向应力friction angle 摩擦角cohesion内聚力Mohr’s stress circle摩尔圆gravel砾石sand砂土silt 粉土clay粘土relative density相对密度angularity棱角度gradation级配particle size粒径direct shear test直剪试验triaxial test 三轴试验unconfined compression test无侧限压缩实验Fall cone test落锥实验Vane test十字板试验表明indicate不均质性、异质性heterogeneity测量、调查survey测量员surveyors场地调查site investigation沉淀、下沉subside沉积物deposits沉降settlement成比例的proportionately承受withstand城镇化urbanization持支撑support 支触发点,扳机trigger传播速度propagation velocity传递荷载transfer load大坝dams大量使用make extensive use of代表性土样representative samples of soils弹性elasticity挡土墙retaining wall地基梁grade beam地理勘探geophysical exploration地面the ground surface地铁线subway line地图绘制mapping地下空间开发underground space utilization地下设施underground facility地下室basement地下水位线the groundwater level地下水污染groundwater pollution地震技术seismic techniques地质构成geologic formation冻融循环freezing-thawing cycle独立基础footing浮式基础floating foundations副产品by-products改善环境improving the environment干湿循环wetting-drying cycle钢筋steel钢筋混凝土reinforced concrete各种,所有方面all aspects of工程管理engineering management公共交通mass transit公共设施utility固结consolidation管道工程学pipeline engineering管线pipeline国家高速运输体系high-speed national transportation systems海岸工程、海洋工程offshore projects 海港harbor洪水灾害floods护堤、路堤embankments滑动剪切特性shearing characteristics 环境恶化environmental degradation 环境工程学environmental engineering 基础设施infrastructure基础体系foundation system基础托换、基础加固underpinning offoundation基础问题elementary problems基于based on计算机辅助设计computer-aided design剪切强度shearing strength建造、施工construction建筑工程学规划constructionengineering建筑规范building codes建筑物,构筑物structure交通工程专家transportationspecialists交通拥堵traffic congestion交通运输工程transportationengineering结构工程structural engineering结构工程专家structural specialists结构扰动structural disturbance结合、组合combination经济发展economic development精细的elaborate聚合物aggregate开挖excavate/excavation开展室内试验performing laboratorytest开展土力学实验perform soilexperiments颗粒尺寸grain size可靠的,可信懒的dependable困境dilemma扩展基础spread foundation理论的应用application of theory连续基础continuous footing联合基础combined footing灵活性、柔性flexible流速rate of flow流体静力学hydrostatic路基材料、地基材料subgrade materials毛细性capillarity密度density明显的进步considerable progress模板forms摩擦阻力frictional resistance内摩擦力internal friction泥浆slurries排水系统drainage system膨胀土expansive soil平板基础slab foundations平衡equilibrium评价、评估evaluate破坏,恶化degrade破坏、失效failure破裂rupture强度strength确保ensureplanning渗透性permeability渗透性permeability施工管理专家construction managementspecialists施工现场construction sites使排水、脱水dewater试验数据experimental data适应,容纳accommodate适用性suitability水利发电的、水电的hydroelectric水利工程学hydraulic engineering水泥;结合剂cement水气moisture素混凝土plain concrete塑性plasticity隧道tunnel土的参数、特性soil characteristic土力学soil mechanics土木工程civil engineering土木工程师civil engineer土压力理论theory of earth pressure为…细分..subdivided into卫生填埋sanitary landfills稳定(性),稳固;stability无效率的inefficient物理特性physical properties下部结构substructure箱型基础caisson消除污染eliminate pollution消遣,娱乐recreational悬臂基础cantilever footing压力pressure压缩性compressibility岩土工程学geotechnical engineering岩土工程专家geotechnical specialists研究生和本科生graduate andundergraduate students液限和塑限liquid and plastic limits易燃的、可燃的combustible有希望的,有前途的promising与….对抗versus预想,设想envision源于stems from远远,不仅仅far more than遭受(荷载、力等)subjected to粘聚力cohesion振动vibration止水帷幕cutoff wall住宅的、居住的residential专业、专长specialty砖brick桩帽,承台pile cap总体视野、全面思想comprehensive vision组成、成分composition钻孔borehole钻孔试验drilling test钻探方法drilling methodsground water地下水rock岩石sand砂子settlement沉降shale页岩clay粘土tunnel隧道sewer line下水道线路metro地铁seismic 地震boring钻孔,penetration test 贯入试验testpit试坑pressuremetertest 旁压仪试验plateloadtest平板载荷试验,cone penetration Test 圆锥贯入试验Standard penetration test标准贯入试验Weight sounding test重量探测试验geopbone地震检波器heave隆起,flow line流线equipotential line等势线settlement, 沉降failure surface破坏面fow net流网failure surface破坏面differential settlement差异沉降cracks 裂缝active earth pressure主动土压力retaining wall 挡土墙sheet pile板桩,anchor锚vertical component竖向分量anchored sheet pile walls锚碇板桩墙concrete element 混凝土构件steel strip钢条aluminium strip铝条strut支撑lateral earth pressure侧向土压力, sheet pile板桩,bottom heave底部隆起concrete pile混凝土桩steel pile 钢桩timber pile木桩point resistance桩端阻力skin resistance桩侧阻力ultimate resistance极限阻力settlement沉降soft clay软粘土void ratio孔隙比porosity 孔隙率water content 含水率unit weight 容重dry unit weight干容量unit weight f solid固体容重specific gravity 比重degree of saturation饱和度gas 气water水solid固体liquid limit液限low plasticity低液限medium plasticity高液限A-line A线clay 粘土silt粉土plasticity index塑性指数shrinkage limit收缩界限semi solid半固体plastic 塑性liquid液体coefficient of permeability渗透系数hydraulic gradient水力梯度flow流动gross area过水面积effective stress有效应力pore water pressure孔隙水压力total stress总应力stress应力 strain应变secant modulus割线模量ultimate stress极限应力stress-strain relationship应力-应变关系poisson’s ratio泊松比modulus of elasticity弹性模量shear stress剪应力shear modulus剪切模量shear deformation剪切变形coefficient of lateral earth pressureat rest侧向静止土压力系数compression modulus压缩模量shear strength抗剪强度failure surface 破坏面attraction内在压力cohesion内聚力shear strength抗剪强度normal stress法向应力shear stress剪应力failure surface破坏面normal stress法向应力friction angle 摩擦角cohesion内聚力Mohr’s stress circle摩尔圆gravel砾石sand砂土silt 粉土clay粘土relative density相对密度angularity棱角度gradation级配particle size粒径direct shear test直剪试验triaxial test 三轴试验unconfined compression test无侧限压缩实验Fall cone test落锥实验Vane test十字板试验。
材料导论中英文讲稿 (4)

6.2.2 Porosity and DensityHello, everybody, in this Section, we are going to talk about porosity and density.译文:在这一节,我们将讨论气孔率和密度。
When referring to a solid material such as a part made from copper or stainless steel, the word density takes into consideration the microstructures that contains no porosity. By which term we do not mean the voids or vacancies in the atomic structure. In speaking of a solid material we mean the material’s theoretical density or mass density, it is the mass of a material divided by its volume.我们通常说到密度,指的是理论密度,表示结构中不包含气孔。
通过质量除以体积得到。
译文:当提到一种固体材料,尤其是由铜或不锈钢制成的材料时,密度这个词通常会考虑到一个没有气孔率的微观结构,在这个词中,我们指的不是原子结构中的孔洞或空位。
我们通常说到密度,指的是理论密度,表示结构中不包含气孔。
通过质量除以体积得到。
There are two factors influence the density of material. Atomic weight is a major factor in determining the density of the materials. Low-atomic-weight elements have low densities. 影响材料密度的因素有两个。
萨密克(Samtec)连接器产品说明书

• S crew down, locking clip, friction latching and weld tab ruggedizing options • Shrouded, polarized and keyed • Surface mount or through-hole tails• High-density, four row design (FOLC/MOLC Series)• Discrete wire assemblies available in single or double row,28 and 30 AWG PVC or *Teflon ™ Fluoropolymer (See pages 238-239). Contact for custom solutions.• Cable components (ISDF/CC03) and tooling available: /tooling • Severe Environment Testing qualified (SFM/TFM); aligns with MIL-DTL-55302. Visit /setIDC cable assemblies with rugged strain relief(FFSD/FFMD, FFTP/FMTP)KEY SPECIFICATIONSFEATURES & BENEFITSLocking for increased unmating force(SFML/TFML)RUGGED TIGER EYE ™ SYSTEMS(1.27 mm) .050" PITCH*Teflon ™ is a trademark of The Chemours Company FC, LLC used under license by Samtec.G b p s83.2AmpsM A XF-224/127mm-TigerEye-1NO. PINSPER ROW-LEAD STYLE-PLATING OPTION-D-OPTIONS03, 04, 06, 08 (Lead Style –01 & –02 only) 05, 07, 10, 15, 20, 25, 30, 35, 40, 45, 50(Standard sizes)–X1= Through-hole–X2= Surface Mount–F= Gold flash onpost, Matte Tinon tail–L= 15 µ" (0.38 µm)Gold on post,–RA= Right-angle(–01 only)–A= Alignment Pin–LC= Locking Clip(Manual Placement required)(not available with –RA)–K= (6.75 mm) .266" DIAPolyimide film Pick & Place Pad(not available with –RA)–P–TR–FR= Full Reel Tape & Reel(must order max. quantity per reel;contact Samtec for quantity breaks)(-X2 only)(not available with –RA) -1----04, 05, 10, 15,20, 25, 30, 35,40, 45, 50(Standard sizes)–T1= Through-holeTiger Eye™ LITE–T2= Surface MountTiger Eye™ LITE–F= Gold flash on contact,Matte Tin on tail–L= 10 µ" (0.25 µm)Gold on contact,Matte Tin on tail–A= Alignment Pin–K= (4.00 mm) .157" DIA Polyimide filmPick & Place Pad–TR= Tape & Reel(–T2 only)–FR= Full Reel Tape & Reel(must order max. quantity per reel;contact Samtec for quantity breaks)(-T2 only)Note:Some lengths, styles andoptions are non-standard,non-returnable.8(1.27 mm) .050" PITCH • COST-EFFECTIVE HEADER/SOCKET–T23.1View complete specifications at: ?SFCView complete specifications at: ?TFCSFCBoard Mates:TFCCable Mates:TFSD, TFSDTTFCBoard Mates:SFCCable Mates:SFSD, SFSDTF-224/127mm-TigerEye。
High density hydrogen storage in superactivated carbons from hydrothermally
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Cite this: Energy Environ. Sci., 2011, 4, 1400 /ees
PAPER
High density hydrogen storage in superactivated carbons from hydrothermally carbonized renewable organic materials†
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organic material such as saccharides (glucose, sucrose, starch or cellulose), simpler compounds such as furfural or more complex substances such as biomass, at temperatures in the range 150– 350 C under autogeneous pressure, has received increasing attention.1 This is due to several reasons: (i) the precursors are readily available, cheap and renewable (i.e., saccharides or biomass), (ii) it is a ‘‘green’’ and simple process as it only involves water as the solvent and consists of a simple heat-treatment in a closed autoclave and (iii) the resulting solid carbon products exhibit attractive chemical and structural properties. The solid products, which are termed hydrochar, are composed of spherical microparticles, whose size can be tuned by modifying the operating conditions (i.e., temperature, solution concentration,
robust_design
汽车玻璃专业术语_英汉对照
1.玻璃品种Glass / glazing 玻璃Raw glass 原片玻璃Float glass 浮法玻璃Sheet glass 平板玻璃Blank glass 毛坯玻璃Template glass 光坯玻璃Automotive glass 汽车玻璃Architectural glass 建筑玻璃OEM (original equipment manufacture)glass原装玻璃ARG (aftermarket replacement glass)修配玻璃Windshield/windscreen 前挡风玻璃Sidelite / body glass 侧围玻璃,车身玻璃Front door glass 前车门玻璃Rear door glass 后车门玻璃Fixed vent 后三角窗Fixed quarter 后侧窗6thlite 第6块玻璃Backlite / backscreen 后挡风玻璃Roof panel/sun roof 顶棚玻璃Safety glass 安全玻璃Laminated glass 夹层玻璃Tempered glass (美)钢化玻璃Toughened glass (英)钢化玻璃Zone-tempered glass 区域钢化玻璃Bullet-proof glass 防弹玻璃Heat absorbing glass 吸热玻璃Wire-meshed glass 夹丝玻璃Insulating glass 中空玻璃Clear glass 白片玻璃/无色玻璃Tinted glass 着色玻璃Untinted glass 无色玻璃Privacy glass 隐私玻璃Painted glass 印刷玻璃Encapsulated glass 粘贴/注塑玻璃Roller hearth glass 辊道成型单曲面钢化玻璃(Quick) sag glass 双曲面弯钢化玻璃press-form glass 压模成型弯钢化玻璃gravity sag glass 自垂成型烘弯玻璃Heatable windshield 加热前挡风玻璃Racing windshield 赛车前挡风玻璃Electric heated backlite 电加热后挡风玻璃2.工艺过程Manufacture Processes2.1Laminated Windshield/Windscreen Processes夹层前挡风玻璃工序Loading/unloading 上/下片Cutting 切割CNC Pre-processing 数控预处理Seaming 倒边/磨小边Grinding 磨边Breakouting 掰边Washing 洗玻璃Silk Screen Painting 丝网印刷Bending 烘弯PVB Stretching PVB拉伸Lamination 夹层Deairing / vacuuming 初压Rear View Mirror Button fitting后视镜底座安装Autoclaving 高压PVB Trimming 中间膜修边PASS Extrusion 预装粘贴挤边Final Inspection 终检2.2Sidelite/Backlite Processes侧围玻璃/后挡风玻璃工序Cutting 切割CNC Pre-processing 数控预处理Grinding 磨边Breakouting 掰边Washing 洗玻璃Silk Screen Painting 丝网印刷Mesh making 制网Bending 烘弯Tempering 钢化Quenching 淬冷Blow-off 脱模Soldering 焊接Priming 涂底漆Door clip installation 门夹安装Curing 固化PVC Encapsulation 聚氯乙烯注塑PU Encapsulation 聚氨脂注塑Final Inspection 终检3.质量检验及缺陷Quality inspection & defects3.1 器具 apparatusChecking gauge 检具/检验模Full-land gauge (玻璃与检具接触的检验模)Pedestal gauge (玻璃接触垫高在检具上销钉的检具) Female/male maraset gauge 凹/凸标准实样模Template 实样板Boundary sample 极限样品Feeler gauge/taper gauge 塞尺Dial indicator 百分表Micrometer 千分尺Tape 卷尺Ruler 直尺Sag Stick 球面尺Vernier 游标卡尺CMM 电脑三坐标测量仪Projector 投影机Stressometer 应力仪Folge-stress-meter 边部应力仪Penetrometer 透光仪Polariscope 偏光仪Viscosimeter 黏度计Weatherometer (WOM) 老化(耐风蚀)测试机3.2 测试项目 Test itemsOptical distortion test 光畸变测试Light transmission ~透光~Warpage ~弯曲度~Secondary (double) image 二重像/副像Abrasion ~耐磨~Fragmentation ~碎片~Head-form ~人头模型~Falling dart ~落箭~Shot-bag ~霰弹~Radiation~耐光~High temperature ~耐温~Low temperature ~耐寒~Thermal shock ~耐温度急变~Humidity ~耐潮湿~Visible ~能见度~Pummel ~帕莫~Roof crush~翻滚~Zebra~斑马线~Ball ~钢球~Peel ~剥离~Torque~扭力~Tensile~抗拉~Shear~抗剪~Compression ~抗压~Stress ~应力~Durability ~耐久~Weathering ~风化(蚀)测试Impact resistance ~抗冲击测试Boiling ~煮沸测试3.3 检验项目 Inspection itemssize 尺寸form(off-block) 吻合度rate of change (ROC) 荷叶边sag 球面cross bend 拱高radius 曲率半径draw line 波筋overlap 叠差crank effort 横向波筋tin side 锡面air side 空气面distortion 折光appearance 外观3.3 缺陷 Defects3.3.1 光学缺陷 Optical defectsOptical distortion 折光/光畸变Bull’s eye 牛眼3.3.2 外观缺陷 Appearance defectsScratch 划伤Rub 擦伤Mar 划痕Shiner 亮斑Poor edgework 不良磨边Chip 爆边Flake chip 薄爆边Shell chip 剥落爆边(同薄爆边) V-chip 三角爆边Adhesion chips/Fused chips 粘附玻璃屑Bloom 起霜Pockmark 麻点Tool / mold mark 钢化模具印Rail mark 烘弯模具印String 线道Seeds 杂晶籽Ream 波筋Cords 深波筋Crizzling 裂子Weathering 霉斑Cloth mark 模布印Roller mark 辊道印See-through terminal 铜电极透印Terminal come-off 铜电极脱落3.3.3. 夹层缺陷 lamination defectsAir penetration 角部气泡Bubble 气泡Delamination 脱胶Inside dirt 夹杂物Hair 夹杂绒毛Lint 杂毛3.3.4. 印刷缺陷 Paint defectsPin hole 针孔Missing dots 圆点漏印Paint void 漏印Dots run-together 糊印Colour spot 色斑Broken line 断线3.3.5. 注塑缺陷 Encapsulation defectsFlow line 流痕Knit line 交接痕Sink 凹坑Short shot 缺塑Scuff 划痕Flash 溢料Pit 麻点Gate blush 浇口色差Ripple 表面皱褶Burnt vinyl 焦糊料Contamination 表面污染Orange Peel 橘子皮4.设备及材料Equipment & MaterialESU (energy saving unit) 前风档烘弯炉DBO-II (deep bending option 2) 深弯炉DBO-IV (deep bending option 4)(带压模)的深弯炉HTF (horizontal tempering furnace)水平钢化炉HTFB (horizontal tempering bender system)浅弯炉Roller hearth 辊道成型单曲面钢化炉Cutter 玻璃切割机Grinder 玻璃磨边机Belt seamer 砂带磨边机Bi-direction grinder 双向磨边机PVB Stretcher 中间膜拉伸机Washer 洗玻璃机Pad printing machine 商标移印机CRB(cylindric radius bender) 单曲面钢化炉CPB(conventional press bender)传统压模深弯炉Glass straight flange edge polisher 直边磨边机Glass severing machine 玻璃掰板机Ceramic block 陶瓷吸盘Ceramic paper 陶瓷纸Load jaws 上片爪子Shuttle 深弯小车Tractor conveyor 托模小车Cold ring 落模/冷环Hot ring 热环Press-form 压模Lift jets 托模喷头Roller 辊道Upper/lower/flat/curved Quench上/下/平/弯风栅Quench nozzles 风栅喷嘴Air broom 风扫装置Grinding cam 靠模Mist collector 集雾器Bending fixture (coffin) 烘弯模Spotting model 烘弯模制作样板架Mesh / fabric 网布Mesh frame 网框Squeegee 刮刀Flood bar 挡料板Photopositive 底片Emulsion 感光乳剂Copyboard 晒板机Vacuum ring 抽真空橡胶条Edge sealer 封闭油Division bar 分割条Reinforcement bar 加强筋Snap pin 弹压齿式定位销Attachment Insert 内嵌件PU (polyurethane) 聚氨基甲酸酯PVC (polyvinyl chloride) 聚氯乙烯PVB(polyvinyl butyral) 聚乙烯醇缩丁醛TPE(thermoplastic elastomer) 热塑弹性体5.其他术语Other terms5.1 汽车 VehicleGRWS (Glass run weatherstrip) 车门槽封条Sheet Metal 车壳/扳金Body 车壳Belt line 门板线HMST(high-mounted stop light) 高位刹车灯Bonnet 引擎盖Dashboard /instruction panel 仪表板A-pillar A柱:前风档与前车门接合处B-pillar B柱:前后车门接合处C-pillar C柱:后车门与后风档的接合处5.2 丝网印刷 Silk Screen PaintingBlack band 黑边silk screen obscuration band 丝网印刷黑边dot fade-out 点与黑边过渡区域footprint 印涂到的区域Paint pattern 点状印刷样式Black paint/ceramic paint 黑胶Silver paint 银浆5.3 包装 PackagingStillage 运输铁架Pallet 托盘Tray 塑料周转箱Dunnage 包装垫料Spacer 垫片Rubber hair pin 橡皮夹Teeth rack (包装箱架底部)齿槽条strip 包装绷带Label 标签Crate 板条箱Fumigation 熏蒸5.4 其他 othersGradient bend PVB上的遮阳带Offcut 掰边下来的角料Cullet 碎玻璃Prototype 首期样品6.缩写AbbreviationANSI American National Standards Institute 美国国家标准学会APQP Advanced Product Quality Plan新产品质量计划ARG Aftermarket Replacement Glass修配玻璃BOM Bill of Materials材料清单C3P Computer-aided design / engineering/ manufacture and Product Data Management电脑辅助设计、工程、制造及产品数据管理Cp Capability of Process Index稳定过程能力指数CpK Capability of Process (Index K)(最小上下限的)稳定过程能力指数DOE Design of Experiments试验的设计DVP&R Design Verification Plan & Report设计验证计划及报告DCAR Defective Correction Action Report缺陷纠正行动报告ECE Economic Committee for Europe欧洲经济委员会EDI Electronic Data Interchanger电子数据交换器FMEA Failure Mode & Effect Analysis缺陷模式及影响分析GD & T Geometric Dimension & Tolerance几何尺寸和公差G R&R Gauge Repeatability & Reproduction检具的重复性和在现性JIT Just-in-time即时供货MMSA Materials Management System Assessment 材料管理系统评估MRD Material Requisition Date领料日(产品交至客户的日期)OEM Original Equipment Manufacture主机厂产品/原装厂产品OTS Off-tool Sample工装样品PM Preventive Maintenance防范性维修保养PPM Parts Per Million废品百万率PPAP Production Part Approval Procedure生产性零部件审批程序PpK Process Performance Index过程性能指数PRFQ Preliminary Request for Quotation初步报价请求书PSW Part Submission Warranty产品递交担保书QSA Quality System Assessment质量系统评估R@R Run at Rate节拍生产SIR Sample Inspection Report样品检验报告SPC Statistical Process Control过程的统计控制SREA Supplier Request for Engineering Change 供应商提出的工程变更申请书7.澳大利亚福特新车开发阶段Vehicle build phases of FOAAP Attribute Prototype属性样机装车CP Confirmation Prototype确认样机装车HTFB Hard Tool Functional Build实模功能性装车1PP Level 1 Production Part首件生产性零部件装车FEU Field Evaluation Unit供路试评估的装车Job 1Launch投产。
力学术语
一般力学类:分析力学analytical mechanics拉格朗日乘子Lagrange multiplier拉格朗日[量]Lagrangian拉格朗日括号Lagrange bracket循环坐标cyclic coordinate循环积分cyclic integral哈密顿[量]Hamiltonian哈密顿函数Hamiltonian function正则方程canonical equation正则摄动canonical perturbation正则变换canonical transformation正则变量canonical variable哈密顿原理Hamilton principle作用量积分action integral哈密顿--雅可比方程Hamilton-Jacobi equation 作用--角度变量action-angle variables阿佩尔方程Appell equation劳斯方程Routh equation拉格朗日函数Lagrangian function诺特定理Noether theorem泊松括号poisson bracket边界积分法boundary integral method 并矢dyad运动稳定性stability of motion轨道稳定性orbital stability李雅普诺夫函数Lyapunov function渐近稳定性asymptotic stability结构稳定性structural stability试验机论坛 久期不稳定性secular instability 弗洛凯定理Floquet theorem倾覆力矩capsizing moment自由振动free vibration固有振动natural vibration暂态transient state环境振动ambient vibration反共振anti-resonance衰减attenuation库仑阻尼Coulomb damping同相分量in-phase component非同相分量out-of -phase component 超调量overshoot参量[激励]振动 parametric vibration 模糊振动fuzzy vibration临界转速critical speed ofrotation阻尼器damper半峰宽度half-peak width集总参量系统lumped parameter system 相平面法phase plane method相轨迹phase trajectory等倾线法isocline method跳跃现象jump phenomenon负阻尼negative damping达芬方程Duffing equation希尔方程Hill equationKBM方法KBM method, Krylov-Bogoliu- bov-Mitropol'skii method马蒂厄方程Mathieu equation平均法averaging method组合音调combination tone解谐detuning耗散函数dissipative function硬激励hard excitation硬弹簧hard spring, hardeningspring谐波平衡法harmonic balance method 久期项secular term自激振动self-excited vibration分界线separatrix亚谐波subharmonic软弹簧soft spring ,softeningspring软激励soft excitation邓克利公式Dunkerley formula瑞利定理Rayleigh theorem分布参量系统distributed parameter system优势频率dominant frequency模态分析modal analysis固有模态natural mode of vibration 同步synchronization超谐波ultraharmonic范德波尔方程van der pol equation 频谱frequency spectrum基频fundamental frequencyWKB方法WKB method, Wentzel- Kramers-Brillouin method缓冲器buffer风激振动aeolian vibration嗡鸣buzz倒谱cepstrum颤动chatter蛇行hunting阻抗匹配impedance matching机械导纳mechanical admittance 机械效率mechanical efficiency 机械阻抗mechanical impedance 随机振动stochastic vibration, random vibration隔振vibration isolation减振vibration reduction应力过冲stress overshoot喘振surge摆振shimmy起伏运动phugoid motion起伏振荡phugoid oscillation 驰振galloping陀螺动力学gyrodynamics陀螺摆gyropendulum陀螺平台gyroplatform陀螺力矩gyroscoopic torque陀螺稳定器gyrostabilizer陀螺体gyrostat惯性导航inertial guidance姿态角attitude angle方位角azimuthal angle舒勒周期Schuler period机器人动力学robot dynamics多体系统multibody system多刚体系统multi-rigid-body system机动性maneuverability凯恩方法Kane method转子[系统]动力学rotor dynamics转子[一支承一基础]系统rotor-support- foundation system静平衡static balancing动平衡dynamic balancing静不平衡static unbalance动不平衡dynamic unbalance现场平衡field balancing不平衡unbalance不平衡量unbalance互耦力cross force挠性转子flexible rotor分频进动fractional frequencyprecession半频进动half frequency precession油膜振荡oil whip转子临界转速rotor critical speed自动定心self-alignment亚临界转速subcritical speed试验机论坛 涡动whirl固体力学类:弹性力学elasticity弹性理论theory of elasticity均匀应力状态homogeneous state of stress 应力不变量stress invariant应变不变量strain invariant应变椭球strain ellipsoid均匀应变状态homogeneous state ofstrain应变协调方程equation of straincompatibility拉梅常量Lame constants各向同性弹性isotropic elasticity旋转圆盘rotating circular disk楔wedge开尔文问题Kelvin problem布西内斯克问题Boussinesq problem艾里应力函数Airy stress function克罗索夫--穆斯赫利什维利法Kolosoff- Muskhelishvili method基尔霍夫假设Kirchhoff hypothesis板Plate矩形板Rectangular plate圆板Circular plate环板Annular plate波纹板Corrugated plate加劲板Stiffened plate,reinforcedPlate中厚板Plate of moderate thickness弯[曲]应力函数Stress function of bending 壳Shell扁壳Shallow shell旋转壳Revolutionary shell球壳Spherical shell[圆]柱壳Cylindrical shell锥壳Conical shell环壳Toroidal shell封闭壳Closed shell波纹壳Corrugated shell扭[转]应力函数Stress function of torsion 翘曲函数Warping function半逆解法semi-inverse method瑞利--里茨法Rayleigh-Ritz method松弛法Relaxation method莱维法Levy method松弛Relaxation量纲分析Dimensional analysis自相似[性]self-similarity影响面Influence surface接触应力Contact stress赫兹理论Hertz theory协调接触Conforming contact滑动接触Sliding contact滚动接触Rolling contact压入Indentation各向异性弹性Anisotropic elasticity颗粒材料Granular material散体力学Mechanics of granular media热弹性Thermoelasticity超弹性Hyperelasticity粘弹性Viscoelasticity对应原理Correspondence principle褶皱Wrinkle塑性全量理论Total theory of plasticity 滑动Sliding微滑Microslip粗糙度Roughness非线性弹性Nonlinear elasticity大挠度Large deflection突弹跳变snap-through有限变形Finite deformation格林应变Green strain阿尔曼西应变Almansi strain弹性动力学Dynamic elasticity运动方程Equation of motion准静态的Quasi-static气动弹性Aeroelasticity水弹性Hydroelasticity颤振Flutter弹性波Elastic wave简单波Simple wave柱面波Cylindrical wave水平剪切波Horizontal shear wave 竖直剪切波Vertical shear wave 体波body wave无旋波Irrotational wave畸变波Distortion wave膨胀波Dilatation wave瑞利波Rayleigh wave等容波Equivoluminal wave勒夫波Love wave界面波Interfacial wave边缘效应edge effect塑性力学Plasticity可成形性Formability金属成形Metal forming耐撞性Crashworthiness结构抗撞毁性Structural crashworthiness拉拔Drawing破坏机构Collapse mechanism回弹Springback挤压Extrusion冲压Stamping穿透Perforation层裂Spalling塑性理论Theory of plasticity安定[性]理论Shake-down theory运动安定定理kinematic shake-down theorem 静力安定定理Static shake-down theorem率相关理论rate dependent theorem载荷因子load factor加载准则Loading criterion加载函数Loading function加载面Loading surface塑性加载Plastic loading塑性加载波Plastic loading wave 简单加载Simple loading比例加载Proportional loading 卸载Unloading卸载波Unloading wave冲击载荷Impulsive load阶跃载荷step load脉冲载荷pulse load极限载荷limit load中性变载nentral loading拉抻失稳instability in tension 加速度波acceleration wave本构方程constitutive equation 完全解complete solution名义应力nominal stress过应力over-stress真应力true stress等效应力equivalent stress流动应力flow stress应力间断stress discontinuity 应力空间stress space主应力空间principal stress space静水应力状态hydrostatic state of stress对数应变logarithmic strain工程应变engineering strain等效应变equivalent strain应变局部化strain localization应变率strain rate应变率敏感性strain rate sensitivity应变空间strain space有限应变finite strain塑性应变增量plastic strain increment累积塑性应变accumulated plastic strain永久变形permanent deformation内变量internal variable应变软化strain-softening理想刚塑性材料rigid-perfectly plastic Material 刚塑性材料rigid-plastic material理想塑性材料perfectl plastic material材料稳定性stability of material应变偏张量deviatoric tensor of strain应力偏张量deviatori tensor of stress应变球张量spherical tensor of strain应力球张量spherical tensor of stress路径相关性path-dependency线性强化linear strain-hardening应变强化strain-hardening随动强化kinematic hardening各向同性强化isotropic hardening强化模量strain-hardening modulus幂强化power hardening塑性极限弯矩plastic limit bending Moment塑性极限扭矩plastic limit torque弹塑性弯曲elastic-plastic bending弹塑性交界面elastic-plastic interface弹塑性扭转elastic-plastic torsion粘塑性Viscoplasticity非弹性Inelasticity理想弹塑性材料elastic-perfectly plastic Material 极限分析limit analysis极限设计limit design极限面limit surface上限定理upper bound theorem上屈服点upper yield point下限定理lower bound theorem下屈服点lower yield point界限定理bound theorem初始屈服面initial yield surface后继屈服面subsequent yield surface屈服面[的]外凸性convexity of yield surface 截面形状因子shape factor of cross-section 沙堆比拟sand heap analogy屈服Yield屈服条件yield condition屈服准则yield criterion屈服函数yield function屈服面yield surface塑性势plastic potential能量吸收装置energy absorbing device能量耗散率energy absorbing device塑性动力学dynamic plasticity塑性动力屈曲dynamic plastic buckling塑性动力响应dynamic plastic response塑性波plastic wave运动容许场kinematically admissible Field静力容许场statically admissible Field流动法则flow rule速度间断velocity discontinuity滑移线slip-lines滑移线场slip-lines field移行塑性铰travelling plastic hinge塑性增量理论incremental theory of Plasticity米泽斯屈服准则Mises yield criterion普朗特--罗伊斯关系prandtl- Reuss relation特雷斯卡屈服准则Tresca yield criterion洛德应力参数Lode stress parameter莱维--米泽斯关系Levy-Mises relation亨基应力方程Hencky stress equation赫艾--韦斯特加德应力空间Haigh-Westergaard stress space 洛德应变参数Lode strain parameter德鲁克公设Drucker postulate盖林格速度方程Geiringer velocity Equation结构力学structural mechanics结构分析structural analysis结构动力学structural dynamics拱Arch三铰拱three-hinged arch抛物线拱parabolic arch圆拱circular arch穹顶Dome空间结构space structure空间桁架space truss雪载[荷]snow load风载[荷]wind load土压力earth pressure地震载荷earthquake loading弹簧支座spring support支座位移support displacement支座沉降support settlement超静定次数degree of indeterminacy 机动分析kinematic analysis结点法 method of joints截面法 method of sections结点力 joint forces共轭位移 conjugate displacement影响线 influence line三弯矩方程 three-moment equation 单位虚力 unit virtual force刚度系数 stiffness coefficient柔度系数 flexibility coefficient 力矩分配 moment distribution力矩分配法 moment distribution method力矩再分配 moment redistribution分配系数 distribution factor矩阵位移法 matri displacement method单元刚度矩阵 element stiffness matrix单元应变矩阵 element strain matrix总体坐标 global coordinates贝蒂定理 Betti theorem高斯--若尔当消去法 Gauss-Jordan elimination Method 屈曲模态 buckling mode复合材料力学 mechanics of composites复合材料 composite material纤维复合材料 fibrous composite单向复合材料 unidirectional composite泡沫复合材料 foamed composite颗粒复合材料 particulate composite层板 Laminate夹层板 sandwich panel正交层板 cross-ply laminate斜交层板 angle-ply laminate层片 Ply多胞固体 cellular solid膨胀 Expansion压实 Debulk劣化 Degradation脱层 Delamination脱粘 Debond纤维应力 fiber stress层应力 ply stress层应变 ply strain层间应力 interlaminar stress比强度 specific strength强度折减系数 strength reduction factor 强度应力比 strength -stress ratio横向剪切模量 transverse shear modulus 横观各向同性 transverse isotropy正交各向异 Orthotropy剪滞分析 shear lag analysis短纤维 chopped fiber长纤维 continuous fiber纤维方向 fiber direction纤维断裂 fiber break纤维拔脱 fiber pull-out纤维增强 fiber reinforcement致密化 Densification最小重量设计 optimum weight design网格分析法 netting analysis混合律 rule of mixture失效准则 failure criterion蔡--吴失效准则 Tsai-W u failure criterion 达格代尔模型 Dugdale model断裂力学 fracture mechanics概率断裂力学 probabilistic fractureMechanics格里菲思理论 Griffith theory线弹性断裂力学 linear elastic fracturemechanics, LEFM弹塑性断裂力学 elastic-plastic fracture mecha-nics, EPFM断裂 Fracture脆性断裂 brittle fracture解理断裂 cleavage fracture蠕变断裂 creep fracture延性断裂 ductile fracture晶间断裂 inter-granular fracture准解理断裂 quasi-cleavage fracture穿晶断裂 trans-granular fracture裂纹 Crack裂缝 Flaw缺陷 Defect割缝 Slit微裂纹 Microcrack折裂 Kink椭圆裂纹 elliptical crack深埋裂纹 embedded crack[钱]币状裂纹 penny-shape crack预制裂纹 Precrack短裂纹 short crack表面裂纹 surface crack裂纹钝化 crack blunting裂纹分* crack branching裂纹闭合 crack closure裂纹前缘 crack front裂纹嘴 crack mouth裂纹张开角 crack opening angle,COA裂纹张开位移 crack opening displacement,COD 裂纹阻力 crack resistance裂纹面 crack surface裂纹尖端 crack tip裂尖张角 crack tip opening angle,CTOA裂尖张开位移 crack tip opening displacement, CTOD 裂尖奇异场 crack tip singularity Field裂纹扩展速率 crack growth rate稳定裂纹扩展 stable crack growth定常裂纹扩展 steady crack growth亚临界裂纹扩展 subcritical crack growth裂纹[扩展]减速 crack retardation止裂 crack arrest止裂韧度 arrest toughness断裂类型 fracture mode滑开型 sliding mode张开型 opening mode撕开型 tearing mode复合型 mixed mode撕裂 Tearing撕裂模量 tearing modulus断裂准则 fracture criterionJ积分 J-integralJ阻力曲线 J-resistance curve断裂韧度 fracture toughness应力强度因子 stress intensity factorHRR场 Hutchinson-Rice-Rosengren Field守恒积分 conservation integral有效应力张量 effective stress tensor应变能密度 strain energy density能量释放率 energy release rate内聚区 cohesive zone塑性区 plastic zone张拉区 stretched zone热影响区 heat affected zone, HAZ延脆转变温度 brittle-ductile transition tempe- rature剪切带 shear band剪切唇 shear lip无损检测 non-destructive inspection双边缺口试件 double edge notched specimen, DEN specimen单边缺口试件 single edge notched specimen, SEN specimen三点弯曲试件 three point bending specimen, TPB specimen中心裂纹拉伸试件 center cracked tension specimen, CCT specime n中心裂纹板试件 center cracked panel specimen, CCP specimen紧凑拉伸试件 compact tension specimen, CT specimen大范围屈服 large scale yielding小范围攻屈服 small scale yielding韦布尔分布 Weibull distribution帕里斯公式 paris formula空穴化 Cavitation应力腐蚀 stress corrosion概率风险判定 probabilistic risk assessment, PRA 损伤力学 damage mechanics损伤 Damage连续介质损伤力学 continuum damage mechanics细观损伤力学 microscopic damage mechanics累积损伤 accumulated damage脆性损伤 brittle damage延性损伤 ductile damage宏观损伤 macroscopic damage细观损伤 microscopic damage微观损伤 microscopic damage损伤准则 damage criterion损伤演化方程 damage evolution equation损伤软化 damage softening损伤强化 damage strengthening损伤张量 damage tensor损伤阈值 damage threshold损伤变量 damage variable损伤矢量 damage vector损伤区 damage zone疲劳 Fatigue低周疲劳 low cycle fatigue应力疲劳 stress fatigue随机疲劳 random fatigue蠕变疲劳 creep fatigue腐蚀疲劳 corrosion fatigue疲劳损伤 fatigue damage疲劳失效 fatigue failure疲劳断裂 fatigue fracture疲劳裂纹 fatigue crack疲劳寿命 fatigue life疲劳破坏 fatigue rupture疲劳强度 fatigue strength疲劳辉纹 fatigue striations 疲劳阈值 fatigue threshold交变载荷 alternating load交变应力 alternating stress 应力幅值 stress amplitude应变疲劳 strain fatigue应力循环 stress cycle应力比 stress ratio安全寿命 safe life过载效应 overloading effect循环硬化 cyclic hardening循环软化 cyclic softening环境效应 environmental effect裂纹片 crack gage试验机论坛 裂纹扩展 crack growth, crack Propagation 裂纹萌生 crack initiation循环比 cycle ratio实验应力分析 experimental stress Analysis 工作[应变]片 active[strain] gage基底材料 backing material应力计 stress gage零[点]飘移 zero shift, zero drift应变测量 strain measurement应变计 strain gage应变指示器 strain indicator应变花 strain rosette应变灵敏度 strain sensitivity机械式应变仪 mechanical strain gage直角应变花 rectangular rosette引伸仪 Extensometer应变遥测 telemetering of strain横向灵敏系数 transverse gage factor横向灵敏度 transverse sensitivity焊接式应变计 weldable strain gage平衡电桥 balanced bridge粘贴式应变计 bonded strain gage粘贴箔式应变计 bonded foiled gage粘贴丝式应变计 bonded wire gage桥路平衡 bridge balancing电容应变计 capacitance strain gage补偿片 compensation technique补偿技术 compensation technique基准电桥 reference bridge电阻应变计 resistance strain gage温度自补偿应变计 self-temperature compensating gage 试验机论坛 半导体应变计 semiconductor strain Gage集流器 slip ring应变放大镜 strain amplifier疲劳寿命计 fatigue life gage电感应变计 inductance [strain] gage光[测]力学 Photomechanics光弹性 Photoelasticity光塑性 Photoplasticity杨氏条纹 Young fringe双折射效应 birefrigent effect等位移线 contour of equal Displacement 暗条纹 dark fringe条纹倍增 fringe multiplication干涉条纹 interference fringe等差线 Isochromatic等倾线 Isoclinic等和线 isopachic应力光学定律 stress- optic law主应力迹线 Isostatic亮条纹 light fringe光程差 optical path difference热光弹性 photo-thermo -elasticity光弹性贴片法 photoelastic coating Method 光弹性夹片法 photoelastic sandwich Method动态光弹性 dynamic photo-elasticity空间滤波 spatial filtering空间频率 spatial frequency起偏镜 Polarizer反射式光弹性仪 reflection polariscope残余双折射效应 residual birefringent Effect应变条纹值 strain fringe value应变光学灵敏度 strain-optic sensitivity应力冻结效应 stress freezing effect应力条纹值 stress fringe value应力光图 stress-optic pattern暂时双折射效应 temporary birefringent Effect脉冲全息法 pulsed holography透射式光弹性仪 transmission polariscope实时全息干涉法 real-time holographic interfero - metry 网格法 grid method全息光弹性法 holo-photoelasticity试验机论坛 全息图 Hologram全息照相 Holograph全息干涉法 holographic interferometry全息云纹法 holographic moire technique全息术 Holography全场分析法 whole-field analysis散斑干涉法 speckle interferometry散斑 Speckle错位散斑干涉法 speckle-shearing interferometry, shearograph y散斑图 Specklegram白光散斑法 white-light speckle method云纹干涉法 moire interferometry[叠栅]云纹 moire fringe[叠栅]云纹法 moire method云纹图 moire pattern离面云纹法 off-plane moire method参考栅 reference grating试件栅 specimen grating分析栅 analyzer grating面内云纹法 in-plane moire method脆性涂层法 brittle-coating method条带法 strip coating method坐标变换 transformation of Coordinates计算结构力学 computational structural mecha-nics加权残量法 weighted residual method有限差分法 finite difference method有限[单]元法 finite element method配点法 point collocation里茨法 Ritz method广义变分原理 generalized variational Principle 试验机论坛 最小二乘法 least square method胡[海昌]一鹫津原理 Hu-Washizu principle赫林格-赖斯纳原理 Hellinger-Reissner Principle 修正变分原理 modified variational Principle约束变分原理 constrained variational Principle 混合法 mixed method杂交法 hybrid method边界解法 boundary solution method有限条法 finite strip method半解析法 semi-analytical method协调元 conforming element非协调元 non-conforming element混合元 mixed element杂交元 hybrid element边界元 boundary element强迫边界条件 forced boundary condition自然边界条件 natural boundary condition 离散化 Discretization离散系统 discrete system连续问题 continuous problem广义位移 generalized displacement广义载荷 generalized load广义应变 generalized strain广义应力 generalized stress界面变量 interface variable节点 node, nodal point[单]元 Element角节点 corner node边节点 mid-side node内节点 internal node无节点变量 nodeless variable杆元 bar element桁架杆元 truss element梁元 beam element二维元 two-dimensional element一维元 one-dimensional element三维元 three-dimensional element轴对称元 axisymmetric element板元 plate element壳元 shell element厚板元 thick plate element三角形元 triangular element四边形元 quadrilateral element四面体元 tetrahedral element曲线元 curved element二次元 quadratic element线性元 linear element三次元 cubic element四次元 quartic element等参[数]元 isoparametric element超参数元 super-parametric element亚参数元 sub-parametric element节点数可变元 variable-number-node element 拉格朗日元 Lagrange element拉格朗日族 Lagrange family巧凑边点元 serendipity element巧凑边点族 serendipity family无限元 infinite element单元分析 element analysis单元特性 element characteristics刚度矩阵 stiffness matrix几何矩阵 geometric matrix等效节点力 equivalent nodal force试验机论坛 节点位移 nodal displacement节点载荷 nodal load位移矢量 displacement vector载荷矢量 load vector质量矩阵 mass matrix集总质量矩阵 lumped mass matrix相容质量矩阵 consistent mass matrix阻尼矩阵 damping matrix瑞利阻尼 Rayleigh damping刚度矩阵的组集 assembly of stiffness Matrices 载荷矢量的组集 consistent mass matrix质量矩阵的组集 assembly of mass matrices单元的组集 assembly of elements局部坐标系 local coordinate system局部坐标 local coordinate面积坐标 area coordinates体积坐标 volume coordinates曲线坐标 curvilinear coordinates静凝聚 static condensation合同变换 contragradient transformation 形状函数 shape function试探函数 trial function检验函数 test function权函数 weight function样条函数 spline function代用函数 substitute function降阶积分 reduced integration零能模式 zero-energy modeP收敛 p-convergenceH收敛 h-convergence掺混插值 blended interpolation等参数映射 isoparametric mapping双线性插值 bilinear interpolation小块检验 patch test非协调模式 incompatible mode节点号 node number单元号 element number带宽 band width带状矩阵 banded matrix变带状矩阵 profile matrix带宽最小化 minimization of band width波前法 frontal method子空间迭代法 subspace iteration method 行列式搜索法 determinant search method 逐步法 step-by-step method纽马克法 Newmark威尔逊法 Wilson拟牛顿法 quasi-Newton method牛顿-拉弗森法 Newton-Raphson method增量法 incremental method初应变 initial strain初应力 initial stress切线刚度矩阵 tangent stiffness matrix割线刚度矩阵 secant stiffness matrix模态叠加法 mode superposition method平衡迭代 equilibrium iteration子结构 Substructure子结构法 substructure technique超单元 super-element网格生成 mesh generation结构分析程序 structural analysis program 前处理 pre-processing后处理 post-processing网格细化 mesh refinement应力光顺 stress smoothing组合结构 composite structure。
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Recently, LDPC codes have been successfully applied to wireless communication channels and other channels with memory. Worthen et al. first applied LDPC codes to a simplified two-state block fading channel with memory and developed a joint channel estimation and decoding algorithm [10]. Eckford et al. [14], [15] analyzed LDPC performance over a class of Markov-modulated channels and designed good irregular LDPC codes for those channels. Jin et al. [16] considered finite-state block fading channels with an iterative channel estimation and LDPC decoding algorithm, and analyzed the performance of the iterative algorithm on both correlated and independent block fading channels using density evolution. Hou et al. [12] used density evolution and differential evolution to design good irregular LDPC codes for Rayleigh fading channels with perfect channel state information (CSI).
Regular LDPC codes were first introduced by Gallager [2]. These were extended to the construction and analysis of random irregular LDPC codes over erasure
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Si−1
Si Ti1 Vi1
LDPC edge permutation
Ck
Sபைடு நூலகம்+1
Fig. 1. A fraction of factor graph for a block fading channel with LDPC code, where channel states are fading amplitudes and independent with each other. In the graph, Tij is the channel characteristic function and Vij is the variable node, both are for the jth symbol of the ith frame, and Ck is the kth parity check node.
Graphical models, such as factor graphs [7], [8], [9], provide a unified approach for designing iterative receivers [11]. Given a factor graph representation of the receiver, the iterative sum-product algorithm can be derived on the graph. Performance analysis of the resulting receiver with LDPC codes is also possible by means of density evolution; this leads to the design of good codes matched to the receiver.
The block fading channel is a widely used model for dispersive wireless channels [1]. In this model, the channel state remains fixed over a block (or frame) of a given size; the channel states may be independent or correlated between successive blocks. This model is a reasonable approximation to a wide variety of practical communication systems, such as orthogonal frequency division multiplexing (OFDM), time-division multiple access (TDMA), frequency-hopped spread-spectrum (FHSS) systems and slow fading channels.
I. INTRODUCTION
Joint channel estimation and decoding is the optimal way to achieve reliable communication over time-varying wireless channels. A good approximation to this optimal scheme with reasonable complexity is the so called iterative receiver, which combines the channel with iteratively decodable codes and carries out channel estimation and decoding iteratively. Many such receivers have been proposed recently. However, little work has been done on designing good codes that are well-matched to the structure of iterative receivers. This paper deals with LDPC code design for coherent block fading channels under joint channel estimation and decoding.
DESIGN OF GOOD LOW-DENSITY PARITY-CHECK CODES FOR BLOCK FADING CHANNELS
Xiaowei Jin, Andrew W. Eckford, and Thomas E. Fuja Department of Electrical Engineering, University of Notre Dame
Notre Dame, Indiana, USA 46556
ABSTRACT
The focus of this paper is the design of good irregular low density parity check (LDPC) codes for Rayleigh block fading channels using a strategy of joint channel estimation and LDPC decoding. It is assumed that the amplitude of the fading coefficient is unknown. A density evolution technique employing a semi-Gaussian approximation is used to find good degree sequences for irregular LDPC codes for channels with different block memory sizes. The capacity of the BPSK-modulated Rayleigh block fading channel with unknown fading amplitude is used as a benchmark. For a block fading channel with a memory size of 20 bits, the best irregular LDPC code found in this paper has a threshold that is 0.47dB away from the channel capacity.