s8050 长电

合集下载

较全的小功率三极管参数+直插式半导体三极管(打印版)

管脚排列封装 Lead Package Arranging / TO-92 140 TO-92L(M) 140 TO-126F 250 TO-92 140 TO-92L(M) 140 TO-126F / TO-92 / TO-92 200 TO-92L(M) 50 TO-92 160 TO-126 200 TO-92 200 TO-92 100 TO-92 50 TO-92 100 TO-92 100 TO-92 EBC ECB ECB ECB ECB ECB ECB ECB ECB EBC ECB ECB ECB ECB EBC ECB EBC
50
30
25
4
0.1
30
0.2
15
1.5
20Biblioteka 20012.5 12.5300 TO-92
ECB
900 1000 830 830 50 -50
25 250 -250 -22 30 25 40 30 40 55 50 30 -60 -50 -30
25 250 -250 -22 30 20 30 20 30 50 45 30 -45 -45 -30
ECB ECB ECB ECB ECB ECB EBC ECB ECB ECB CBE CBE EBC CBE CBE
1000 -4000 200 100
900 1000 800 1000 100 400 400 625 625 20 100 100 100 100
KSD471A 3DG471A 2SC535 2SC536 3DG535 3DG536
3DG380TM M 2SC383T 3DG383TM M 2SC388AT 3DG388AT
300
50
35

QX5305应用指导书2105最新

典型应用电路图
Modify the text title
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第 1 页，共 7 页
01/28/2015
深圳市双宜科技有限公司
电路选型建议
LED 输出电流设定：RFB=0.25V/Io 输入限流设定：RCS=RFB*0.7*VIN/VO IC 关断时间设定：
QX5305 LED 太阳能路灯方案
VIN（V）
12 16 20 24
IIN（A）
2.34 1.68 1.33 1.10
I O （ A）
0.596 0.596 0.598 0.600
η（%）
86.0 89.7 91.0 92.0
带载测试负载调整率
除非特别说明，VIN=24V，TA=25ºC，CO=47uF，L1=66uH
VIN（V）
24 24 24 24
应用领域
多节干电池供电驱动 LED 灯串 LED 灯杯 RGB 大显示屏高亮度 LED 灯平板显示器 LED 背光灯通用恒流源恒流充电控制器
Modify the text title
技术索样请点击五角星
第 2 页，共 7 页
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深圳市双宜科技有限公司
PCB 布图参考
效率
效率 η 90 95 %
典型应用参数(接上一页)
除非特别说明，VIN=12V，TA =25ºC，CO=47uF，L1=66uH
参数振荡特性
最高振荡频率
符号
测试条件
最小值
典型值
最大值
单位
FMAX
VIN=12V,VO=40V,IO=0.6A
250
1000
KHz
EN 使能端输入

STM8S105C6T6 最小系统板 V1.0.0.0 说明书

深圳市技新电子科技有限公司www.jixin.pro
STM8S105C6T6最小系统板V1.0.0.0
模块尺寸图：
品质说明：
PCB 设计软件：LCEDA（）
元器件提供商：立创商城（）
电路板制造商：深圳嘉立创（）
STM8S105C6T6最小系统板产品手册
方法一：进入技新网（jixin.pro）->产品中心->搜索该模块名称->进入该模块页面下载
方法二：https://www.jixin.pro/product/874.html
资料获取：
模块简介：
模块采用STM8S105C6T6为核心，并将所有的
IO 口引出，电源可选择5V 或3.3V 供电并引出5V 与3.3V 的电源接口。

带有两个LED 指示灯，四个按键，引出SWIM 接口与串口接口、电流测试接口和外扩接口，集成蜂鸣器电路。

产品特点：
引出MCU 所有IO、电源、下载、测试等接口可选择5V 或3.3作为MCU 供电可选择SWIM 或串口下载程序
提示：1、想直接用我们的封装做产品，在LCEDA 直接搜索我们的封装名称即可找到并使用
2、你的产品要用到和我们一样的元器件，在立创商城搜索框输入“器件编号”即可直达
深圳市技新电子科技有限公司www.jixin.pro STM8S105C6T6最小系统板V1.0.0.0。

S-80855中文资料

Battery checker Power failure detector Power monitor for pagers, calculators,
organizers,
Constant voltage power monitor for cameras,
video equipment, communication devices
元器件交易网
Contents
Features .............................................................. 1 Applications ......................................................... 1 Pin Assignment ................................................... 1 Block Diagram ..................................................... 2 Selection Guide ................................................... 2 Output Configurations.......................................... 5 Absolute Maximum Ratings ................................. 6 Electrical Characteristics ..................................... 7 Test Circuits ........................................................ 11 Technical Terms.................................................. 12 Standard Circuit................................................... 13 Operation............................................................. 14 Dimensions.......................................................... 16 Taping ................................................................ 17 Marking ............................................................... 20 Characteristics (typical characteristics)................ 21 Application Circuit Examples ............................... 28 Remarks.............................................................. 29 Frequently Asked Questions................................ 30

S-80845中文资料

Features
Applications
1.3 µA typ. (VDD=1.5 V)
Ultra-low current consumption
Products with detection voltage of 1.4 V or less electronic 0.8µA typ. (VDD=3.5 V) Products with detection voltage of 1.5‚uor more

Pin Assignment
(1) SC-82AB Top view 4 3 1 2 3 4 1 2
1 2 3
(2)
TO-92
(3)
SOT-89-3 Top view
(4) SOT-23-5 Top view 5 4 1 2 3 OUT VDD VSS 1 2 3 4 5 OUT VDD VSS NC NC
S-808XX AX XX - XXX - T2
Directions of the IC for taping specifications Product name (abbreviation) Package name (abbreviation) NP: SC-82AB MP: SOT-23-5 UP: SOT-89-3 Y: TO-92 Output type N: Nch open-drain (active low output) L: CMOS (active low output) Detection voltage rank
2
Seiko Instruments Inc.
易网
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series

S-80840CNMC-B8C-T2中文资料

*1. Refer to the taping specifications at the end of this book. T2 is the standard. *2. Refer to the Table 1 and 3 in the “2. Product Name List” 1-2. SNT-4A packages
Features
• Ultra-low current consumption • • • • • 1.3 µA typ. (detection voltage≤1.4 V, at VDD=1.5 V) 0.8 µA typ. (detection voltage≥1.5 V, at VDD=3.5 V) High-precision detection voltage ±2.0 % Operating voltage range 0.65 V to 5.0 V (detection voltage≤1.4 V) 0.95 V to 10.0 V (detection voltage≥1.5 V) Hysteresis characteristics 5 % typ. Detection voltage 0.8 V to 6.0 V (0.1 V step) Output form Nch open-drain output (Active Low) CMOS output (Active Low)
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series
Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request. Refer to the "1. Product Name" for the construction of the product name and "2. Product Name List" for the full product names. 1. Product Name 1-1. SC-82AB, SOT-23-5, SOT-89-3 packages

8050s(贴片三极管)

UNISONIC TECHNOLOGIES CO., LTD8050SNPN SILICON TRANSISTORLOW VOLTAGE HIGHCURRENT SMALL SIGNAL NPN TRANSISTORDESCRIPTIONThe UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.FEATURES *Collector current up to 700mA*Collector-Emitter voltage up to 20V *Complementary to UTC 8550SORDERING INFORMATIONOrdering Number Pin AssignmentNormal Lead Free Plating Halogen-Free Package 1 2 3 Packing8050S-x-AE3-R 8050SL-x-AE3-R 8050SG-x-AE3-R SOT-23 E B C Tape Reel 8050S-x-T92-B 8050SL-x-T92-B 8050SG-x-T92-B TO-92 E C B Tape Box 8050S-x-T92-K 8050SL-x-T92-K 8050SG-x-T92-K TO-92 EC BBulkMARKING (For SOT-23 Package)ABSOLUTE MAXIMUM RATING ( Ta=25°C, unless otherwise specified )PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Collector Current I C 700 mASOT-23 350 mWCollector Dissipation(Ta=25°C) TO-92 P C1 WJunction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °CNote: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BV CBO I C = 100μA, I E = 0 30 V Collector-Emitter Breakdown Voltage BV CEO I C = 1mA, I B = 0 20 V Emitter-Base Breakdown Voltage BV EBO I E = 100μA, I C =0 5 V Collector Cut-Off Current I CBO V CB = 30V,I E = 0 1 uA Emitter Cut-Off Current I EBOV EB = 5V, I C = 0 100nA h FE1V CE = 1V, I C = 1mA 100 400 h FE2V CE = 1V, I C = 150 mA 120 DC Current Gain(note) h FE3V CE = 1V, I C = 500mA 40 Collector-Emitter Saturation Voltage V CEO(SAT)I C = 500mA, I B = 50mA 0.5V Base-Emitter Saturation Voltage V BEO(SAT)I C = 500mA, I B = 50mA 1.2V Base-Emitter Saturation Voltage V BEO(SAT)V CE = 1V, I C = 10mA 1.0V Current Gain Bandwidth Product f T V CE = 10V, I C = 50mA 100 MHz Output Capacitance CobV CB = 10V, I E = 0, f = 1MHz 9.0 pFCLASSIFICATION OF h FE2RANK C D ERANGE 120-200 160-300 280-400TYPICAL CHARACTERISTICSC o l l e c t o r C u r r e n t , I c (m A )D C C u r r e n t G a i n , h F ES a t u r a t i o n V o l t a g e (m V )C o l l e c t o r C u r r e n t , I c (m A )C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f (M H z )C a p a c i t a n c e , C o b (p F )。

8050S中文资料(Unisonic Technologies)中文数据手册「EasyDatasheet - 矽搜」

3 C 带盘 B 磁带盒 B Bulk
打标
（对于SOT-23封装）
1 of 4 QW-R206-001,E
芯片中文手册,看全文,戳
8050S
绝对最大额定值
NPN硅晶体管
（TA = 25°C,除非另有规定）
参数
符号
集电极基极电压
VCBO
集电极 - 发射极电压
VCEO
发射极基极电压
VEBO
电气特性ta25c除非另有规定参数集电极基击穿电压集电极发射极击穿电压发射基地击穿电压集电极截止电流发射极截止电流dc电流增益注集电极发射极饱和电压基地发射极饱和电压基地发射极饱和电压当前增益带宽产品输出电容符号bvcbobvceobvebocob测试条件1mhzmin3020typ最大单位ua100na4001001204005121010090mhzpfh分类fe2qwr206001e芯片中文手册看全文戳easydscn8050s电流增益带宽产品f兆赫集电极电流ic毫安集电极电流ic毫安典型特征饱和电压mvdc电流增益h电容cobpfnpn硅晶体管硅晶体管qwr206001e芯片中文手册看全文戳easydscn8050snpn硅晶体管硅晶体管设备故障不承担任何责任额定数值例如最大额定值工作环境范围或其他参数任何产品规格和描述或此处包含所有utc产品上市
订购号无铅电镀
8050SL-x-AE3-R 8050SL-x-T92-B 8050SL-x-T92-K
无卤
8050SG-x-AE3-R 8050SG-x-T92-B 8050SG-x-T92-K
3
1 2
SOT-23
1 TO-92
包
SOT-23 TO-92 TO-92
引脚分配
12 EB EC EC

bq8050资料

bq8050资料篇一：8050三极管参数8050三极管参数类型:开关型;极性:NPN;材料:硅;最大集存器电流(A):0.5A;直流电增益:10to60;功耗:625mW;最大集存器发射电(VCEO):25;频率:150MHzPE8050硅NPN30V1.5A1.1W3DG8050硅NPN25V1.5AFT=190某K2SC8050硅NPN25V1.5AFT=190某KMC8050硅NPN25V700mA200mW150MHzCS8050硅NPN25V1.5AFT=190某K8050和8550三极管在电路应用中经常作为对管来使用，当然很多时候也作为单管应用。

8050为硅材料NPN型三极管;8550为硅材料PNP型三极管。

8050S8550SS8050S8550参数：耗散功率0.625W(贴片：0.3W)集电极电流0.5A集电极--基极电压40V集电极--发射极击穿电压25V特征频率fT最小150MHZ典型值产家的目录没给出按三极管后缀号分为BCD档贴片为LH档放大倍数B85-160C120-200D160-300L100-200H200-350 C8050C8550参数：耗散功率1W集电极电流1.5A集电极--基极电压40V集电极--发射极击穿电压25V特征频率fT最小100MHZ典型190MHZ放大倍数：按三极管后缀号分为BCD档放大倍数B：85-160C：120-200D：160-3008050SS8550SS参数：耗散功率:1W(TA=25℃)2W(TC=25℃)集电极电流1.5A集电极--基极电压40V集电极--发射极击穿电压25V特征频率fT最小100MHZ放大倍数：按三极管后缀号分为BCDD3共4档放大倍数B：85-160C：120-200D：160-300D3:300-400引脚排列有EBCECB两种SS8050SS8550参数：耗散功率:1W(TA=25℃)2W(TC=25℃)集电极电流1.5A集电极--基极电压40V集电极--发射极击穿电压25V特征频率fT最小100MHZ放大倍数：按三极管后缀号分为BCD共3档放大倍数B：85-160C：120-200D：160-300引脚排列多为EBCUTC的S8050S8550引脚排列有EBC8050S8550S引脚排列有ECB这种管子很少见参数：耗散功率1W集电极电流0.7A集电极--基极电压30V集电极--发射极击穿电压20V特征频率fT最小100MHZ典型产家的目录没给出放大倍数：按三极管后缀号分为CDE档C：120-200D：160-300E：280-400NEC的8050最大集电极电流(A):0.5A;直流电增益:10to60;功耗:625mW;最大集电极-发射极电压(VCEO):25;频率:150MHz.其它的8050PE8050硅NPN30V1.5A1.1WMC8050硅NPN25V700mA200mW150MHzCS8050硅NPN25V1.5AFT=190某K3DG8050硅NPN25V1.5AFT=190某K2SC8050硅NPN25V1.5AFT=190某K值得注意的是，在代换相应的8050或8550三极管时，除了型号匹配，放大倍数也是很重要的参数篇二：几种常见8050的区别几种常见8050的区别80508550三极管有时在电路里做为对管来使用，也有的做单管应用。

ss8050引脚图_数据手册_三极管开关参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92Plastic-Encapsulate TransistorsTO-92SS8050TRANSISTOR (NPN )1. EMITTERFEATURESPower DissipationP CM : 1 W (T A =25.): 2 W (T C =25.)2. BASE3. COLLECTORMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T =25℃ unless otherwise specified)CLASSIFICATION OF h FE(1)B,Feb,2012Parameter Symbol Test conditions Min TypMaxUnit Collector-base breakdown voltageV (BR)CBO I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V Emitter-base breakdown voltageV (BR)EBO I E =100μA, I C =0 5VCollector cut-off current I CBO V CB =40V, I E =0 0.1 μA Emitter cut-off currentI CEO V CE =20V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μADC current gain h FE(1) V CE =1V, I C =100mA85 400h FE(2) V CE =1V, I C =800mA 40Collector-emitter saturation voltage V CE(sat) I C =800mA, I B =80mA 0.5 V Base-emitter saturation voltageV BE(sat) I C =800mA, I B =80mA 1.2 V Base-emitter voltage V BE V CE =1V, I C =10mA 1V Transition frequencyf T V CE =10V, I C =50mA,f=30MH Z 100MHzSymbolParameter Value Unit V CBO Collector-Base Voltage 40 V V CEOCollector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I CCollector Current -Continuous 1.5 A T j Junction Temperature 150 ℃T stg Storage Temperature -55-150 ℃Rank B C D D3Range85-160 120-200 160-300 300-400(m A )h F EC O L L E C T O R C U R R E N TD C C U R RE N T G A I NC O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t(m V )B A S E -E M I T T E R S A T U R A T I O NV O L T A G E V B E s a t(V )(m A )C O L L C E T O R C U R R E N TC A P A C I T A N C EC(p F )(M H z )C O L L E C T O R P O W E RD I S S I P A T I O N P C(m W )T R A N S I T I O N F R E Q U E N C Y10100Typical CharacterisiticsSS8050140120100Static Characteristic500uA450uA400uACOMMON EMITTERT a =25℃1000300h FE ——T a =100℃I CCOMMON EMITTERV CE =1V350uA T a =25℃80604020300uA 250uA200uA150uA100uAI =50uA100300 100.00.51.01.52.02.51310301003001000 1500COLLECTOR-EMITTER VOLTAGE V CE(V)COLLECTOR CURRENT I C(mA)1000V CEsat —— I C1.2V BEsat ——I C3001001.0T a =100℃0.8T a =25℃30T a =25℃0.6T a =100℃100.43β=10β=1011310301003001000 15000.21 330300 1000 1500COLLECTOR CURRENT I C(mA)COLLECTOR CURRENT I C(mA)15001000V BE —— I C1000C ob / C ib —— V CB / V EBf=1MHzI E =0/I C =0 T a =25℃10010T a =100℃T a =25℃10010CCCOMMON EMITTERV CE =1V10.20.40.60.81.01.210.10.3131020BASE-EMMITER VOLTAGE V BE (V)REVERSE VOLTAGE V (V)1000f T —— I C1200P C —— T a300100301010008006004003V CE =10V T a =25℃20012101000 25 50 75 100 125 150COLLECTOR CURRENT I C(mA)AMBIENT TEMPERATURE T a (℃)B,Feb,2012万联芯城-电子元器件采购网是长电科技，顺络，厚声等多家知名元件品牌的原厂授权代理商，所售电子元器件产品均为原装现货库存，专为终端客户提供一站式电子元器件配单服务，万联芯城成立于2014年，拥有丰富的行业经验以及优质的货源渠道，拥有大型现代化仓储系统，只需提交BOM表，即可为您报价。

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors

S9018
TRANSISTOR (NPN)

FEATURES
z
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner

z
High Current Gain Bandwidth Product

MARKING：J8
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)

Symbol ParameterValueUnit
VCBO
Collector-Base Voltage 30 V
VCEO
Collector-Emitter Voltage 15 V
VEBO
Emitter-Base Voltage 5 V
IC
Collector Current -Continuous 50 mA
PC
Collector Power Dissipation 200 mW

Tj
Junction Temperature 150
℃

Tstg
Storage Temperature -55-150
℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I

C= 100μA, IE
=0

30 V

Collector-emitter breakdown voltage
V
(BR)CEO IC= 1mA, IB

=
0 15 V
Emitter-base breakdown voltage
V
(BR)EBO
I

E=100μA, IC
=0

5 V

Collector cut-off current
I
CBO VCB=12V, IE

=
0 0.05
μ
A

Collector cut-off current
I
CEO VCE=12V, IB

=
0 0.1
μ
A

Emitter cut-off current
I
EBO VEB= 3V, IC

=
0 0.1
μ
A

DC current gain
h
FE(1) VCE=5V, IC
= 1mA 70 190

Collector-emitter saturation voltage
V
CE(sat) IC=10mA, IB
= 1mA 0.5 V

Base-emitter saturation voltage
V
BE(sat) IC=10mA, IB
= 1mA 1.4 V

Transition frequency
f
T

V
CE=5V, IC
= 5mA

f=400MHz
800 MHz

CLASSIFICATION OF h
FE

Rank
L H

Range
70-105 105-190

SOT-23
1. BASE
2. EMITTER
3. COLLECTOR

5ș-$󰀃
Thermal Resistance from Junction to Ambient
625
℃/W

A,May,2011
元器件代理销售商丗www.tan-e.cn