Optimal orientation of striped states in the quantum Hall system against external modulatio
Optimal Positioning in Derivative Securities

Peter Carr Morgan Stanley 1585 Broadway, 6th Floor New York, NY 10036 (212) 761-7340 carrp@ Dilip Madan College of Business & Management University of Maryland College Park, MD 20742 (301) 405-2127 dbm@
1 For example, three recent comprehensive texts on asset allocation are Gibson 17], Vince 38], or Leibowitz et. al. 27], none of which cover derivatives. 2 See Evnine and Hendriksson 15] and Tilley and Latainer 37] for discussions on the use of options in an asset allocation framework.
Abstract
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Optimal Positioning in Derivative Securities
1 Introduction
The portfolio selection problem pioneered by Merton 28] generally does not consider derivative securities as potential investment vehicles. Similarly, the asset allocation approach favored by practitioners does not1 consider derivatives as a distinct asset class. If derivatives (forwards, futures, swaps, options, and exotics) are considered at all, they are only viewed as tactical2 vehicles for e ciently re-allocating funds across broad asset classes, such as cash, xed-income, equity, and alternative investments. Thus, the question of how investors should optimally position themselves in derivatives has been largely left unanswered by both the academic and practitioner communities. The absence of a coherent framework for determining optimal derivatives positioning is likely due to the complexity of the problem and to the overwhelming success of the arbitrage-based models for pricing derivatives. Since these models are dynamically complete in the underlying assets, derivatives are redundant securities. In these models, the optimal position in derivatives is either indeterminate or in nite, depending on whether an investor agrees or disagrees with the derivative's market price. Clearly, these models are unsuited for the development of a normative theory, which is capable of providing guidance both for investors contemplating various investment alternatives, and for regulators assessing the e cacy of derivatives markets. The purpose of this paper is to delineate conditions under which investors nd it optimal to add derivatives to their portfolio mix. A second purpose is to nd the optimal position in both primary and secondary assets. We show that under reasonable market conditions, derivatives are not redundant, but instead comprise a separate asset class, imperfectly correlated with other broad asset classes. Under this view, the introduction of derivatives enhances the investment possibility frontier. In fact, this paper extends a line of investigation initiated by Ross 32] in which derivatives complete the market. Working in a single period setting, we show how investors can determine
optimal fingerprint method

optimal fingerprint methodThe Optimal Fingerprint Method (OFM) is a technique used in the field of image processing and computer vision for fingerprint recognition. The goal of OFM is to extract and represent fingerprint images in a way that allows for efficient and accurate recognition and matching.The basic idea behind OFM is to divide the fingerprint image into small regions or blocks, and then提取每个区域的特征。
These features can include things like the orientation and frequency of the指纹纹路, as well as the presence or absence of certain features such as ridges and valleys.Once the features have been extracted from each region, they are combined into a vector or matrix that represents the entire fingerprint image. This vector or matrix is then used as input to a recognition algorithm, which compares it to other fingerprints in a database to determine whether there is a match.One of the advantages of OFM is that it is relatively simple and efficient, and can be implemented using standard image processing techniques. Additionally, it is able to handle a wide variety of fingerprint images, including those that are distorted or have noise.However, OFM also has some limitations. For example, it may not be able to accurately represent fingerprints that have very complex or irregular patterns. Additionally, it may be vulnerable to attacks such as spoofing or presentation attacks.Overall, the Optimal Fingerprint Method is a useful technique for fingerprint recognition, but it is important to consider its limitations and potential vulnerabilities when using it in practical applications.。
技嘉AMD RAID 安装指南说明书

AMD RAID Installation Guide1. AMD BIOS RAID Installation Guide (2)1.1 Introduction to RAID (2)1.2 RAID Configurations Precautions (4)1.3 UEFI RAID Configuration (6)2. AMD Windows RAID Installation Guide (19)2.1 Create a RAID volume under Windows (19)2.2 Delete a RAID array under Windows. (26)1.AMD BIOS RAID Installation GuideThe BIOS screenshots in this guide are for reference only and may differ from the exact settings for your motherboard. The actual setup options you will see shall depend on the motherboard youpurchase. Please refer to the product specification page of the model you are using for information on RAID support. Because the motherboard specifications and the BIOS software might be updated, the content of this documentation will be subject to change without notice.AMD BIOS RAID Installation Guide is an instruction for you to configure RAID functions by using the onboard FastBuild BIOS utility under BIOS environment. After you make a SATA driver diskette, press [F2] or [Del] to enter BIOS setup to set the option to RAID mode by following the detailed instruction of the “User Manual” in our support CD, then you can start to use the onboard RAID Option ROM Utility to configure RAID.1.1 Introduction to RAIDThe term “RAID” stands for “Redundant Array of Independent Disks”, which is a method combining two or more hard disk drives into one logical unit. For optimal performance, please install identical drives of the same model and capacity when creating a RAID set.RAID 0 (Data Striping)RAID 0 is called data striping that optimizes two identical hard disk drives to read and write data in parallel, interleaved stacks. It will improve data access and storage since it will double the data transfer rate of a single disk alone while the two hard disks perform the same work as a single drive but at a sustained data transfer rate.WARNING!!Although RAID 0 function can improve the access performance, it does not provide any fault tolerance. Hot-Plug any HDDs of the RAID 0 Disk will cause data damage or data loss.RAID 1 (Data Mirroring)RAID 1 is called data mirroring that copies and maintains an identical image of data from one drive to a second drive. It provides data protection and increases fault tolerance to the entire system since the disk array management software will direct all applications to the surviving drive as it contains a complete copy of the data in the other drive if one drive fails.3RAID 5 (Block Striping with Distributed Parity)RAID 5 stripes data and distributes parity information across the physical drives along with the data blocks. This organization increases performance by accessing multiple physical drives simultaneously for each operation, as well as fault tolerance by providing parity data. In the event of a physical drive failure, data can be re-calculated by the RAID system based on the remaining data and the parity information. RAID 5 makes efficient use of hard drives and is the most versatile RAID Level. It works well for file, database, application and web servers.RAID 10 (Stripe Mirroring) RAID 0 drives can be mirrored using RAID 1 techniques, resulting in a RAID 10 solution for improved performance plus resiliency. The controller combines the performance of data striping (RAID 0) and the fault tolerance of disk mirroring (RAID 1). Data is striped across multiple drives and duplicated on another set of drives.41.2 RAID Configurations Precautions1.Please use two new drives if you are creating a RAID 0 (striping) array for performance. It isrecommended to use two SATA drives of the same size. If you use two drives of different sizes, the smaller capacity hard disk will be the base storage size for each drive. For example, if one hard disk has an 80GB storage capacity and the other hard disk has 60GB, the maximum storage capacity for the 80GB-drive becomes 60GB, and the total storage capacity for this RAID 0 set is 120GB.2.You may use two new drives, or use an existing drive and a new drive to create a RAID 1 (mirroring)array for data protection (the new drive must be of the same size or larger than the existing drive). If you use two drives of different sizes, the smaller capacity hard disk will be the base storage size. For example, if one hard disk has an 80GB storage capacity and the other hard disk has 60GB, the maximum storage capacity for the RAID 1 set is 60GB.3.Please verify the status of your hard disks before you set up your new RAID array.WARNING!!Please backup your data first before you create RAID functions. In the process you create RAID, the system will ask if you want to “Clear Disk Data” or not. It is recommended to select “Yes”, and then your future data building will operate under a clean environment.1.3 UEFI RAID ConfigurationSetting up a RAID array using UEFI Setup Utility and installing WindowsSTEP 1: Set up UEFI and create a RAID array1.While the system is booting, press [F2] or [Del] key to enter UEFI setup utility.2.Go to Advanced\Storage Configuration.3.Set “SATA Controller(s)” to <RAID>.4.Go to Advanced\AMD PBS and set “NVMe RAID mode” to <Enabled >.5.Go to Boot\CSM and set “CSM” to <Disabled>.6.Press [F10] to save your changes and exit, and then enter the UEFI Setup again.7.After saving the previously changed settings via [F10] and rebooting the system, the “RAIDXpert2Configuration Utility” submenu becomes available.8.Go to Advanced\RAIDXpert2 Configuration Utility\Array Management, and then delete the existing diskarrays before creating a new array.Even if you have not configured any RAID array yet, you might have to use “Delete Array” first.9.Go to Advanced\RAIDXpert2 Configuration Utility\Array Management\Create Array9A. Select “RAID Level”9B. Select “Select Physical Disks”.9C. Change “Select Media Type” to “SSD” or leave at “BOTH”.9D. Select “Check All” or enable specific drives that you want to use in the array. Then select “Apply Changes”.9E. Select “Create Array”.10.Press [F10] to save to exit.*Please note that the UEFI screenshots shown in this installation guide are for reference only. Please refer to ASRock’s website for details about each model.https:///index.aspSTEP 2: Download driver from ASRock's websiteA.Please download the “SATA Floppy Image” driver from ASRock's website(https:///index.asp) and unzip the file to your USB flash drive.Normally you can also use the RAID driver offered via the AMD website.STEP 3: Windows installationInsert the USB drive with Windows 10 installation files. Then restart the system. While the system is booting, please press [F11] to open the boot menu that is shown in this picture. It should list the USB drive as a UEFI device. Please select this to boot from. If the system restarts at this point, then please open the [F11] boot menu again.1.When the disk selection page shows up during the Windows installation process, please click <LoadDriver>. Do not try to delete or create any partition at this point.2.Click <Browse> to find the driver on your USB flash drive. Three drivers must be loaded. This is the first.The folder names might look different depending on the driver package that you are using.3.Select “AMD-RAID Bottom Device” and then click <Next>.4.Load the second driver.5.Select “AMD-RAID Controller” and then click <Next>.6.After the second driver is loaded, the RAID disk will show up. Please do not forget to load the thirddriver.7.Select “AMD-RAID Config Device” and then click <Next>.8.Select unallocated space and then click <Next>.9.Please follow the Windows installation instructions to finish the process.10.After the Windows installation is finished, please install the drivers from ASRock’s website.https:///index.asp11.Go to Boot menu and set “Boot Option #1” to <Windows Boot Manager (AMD-RAID)>.2. AMD Windows RAID Installation GuideCaution:This chapter describes how to configure a RAID volume under Windows. You can use for the following scenarios:1.Windows is installed on a2.5” or3.5” SATA SSD or HDD. You want to configure a RAID volume withNVMe M.2 SSDs.2.Windows is installed on an NVMe M.2 SSD. You want to configure a RAID volume with 2.5” or3.5”SATA SSDs or HDDs.2.1 Create a RAID volume under Windows1.Enter the UEFI Setup Utility by pressing <F2> or <Del> right after you power on the computer.2.Set the “SATA Controller(s)” option to <RAID>. (If you are using NVMe SSDs for RAID configuration,please skip this step)3.Go to Advanced\AMD PBS and set “NVMe RAID mode” to <Enabled >. (If you are using 2.5” or 3.5” SATAdrives for RAID configuration, please skip this step)4.Press “F10” to save the setting and reboot to Windows.5.Install the “AMD RAID Installer” from the AMD website:https:///en/supportSelect “Chipsets”, select your socket and chipset, and click “Submit”.Please find “AMD RAID Installer”.6.After installing the “AMD RAID Installer”, please launch “RAIDXpert2” as administrator.57.Find “Array” in the menu and click on “Create”.8.Select the RAID type, the disks which would like to use for RAID, volume capacity and then create theRAID array.9.In Windows open “Disk Management”. You will be prompted to initialize the disk. Please select “GPT”and click “OK”.10.Right click at the “Unallocated” section of the disk and create a new simple volume.11.Follow the “New Simple Volume Wizard” to create a new volume.12.Wait a bit for the system to create the volume.13.After creating the volume the RAID is available to use.2.2 Delete a RAID array under Windows.1.Select the array which you would like to delete.2.Find “Array” in the menu and click on “Delete”.3.Click “Yes” to confirm.。
重掺_100_硅单晶抛光片条纹状起伏缺陷研究

重掺<100>硅单晶抛光片条纹状起伏缺陷研究王云彪,张为才,武永超,陈亚楠(中国电子科技集团公司第四十六研究所,天津 300220)摘 要:重掺<100>硅单晶片抛光后经微分干涉显微镜观测,抛光片边缘区域存在条纹状起伏缺陷。
通过分析条纹状起伏缺陷与重掺硅单晶中杂质的分布状况和<100>晶面本身腐蚀特性的关系,阐述了条纹状起伏缺陷形成的机理。
通过工艺试验,对比了不同工艺条件下抛光片表面微观形貌状况,分析了抛光过程中各工艺条件对表面条纹起伏缺陷的影响,采用3步抛光工艺,得到了表面平整和一致性好的抛光片表面,抛光片边缘无条纹起伏缺陷。
关键词:条纹起伏缺陷;微观形貌;抛光片中图分类号:TN305 文献标识码:A 文章编号:1001-3474(2012)05-0312-04Research of Striped Rolling Defects on Heavily Doped <100> Polished Silicon WafersWANG Yun-biao, ZHANG Wei-cai, WU Yong-chao, CHEN Ya-nan(No.46 Research Institute of CETC, Tianjin 300220, China)Abstract: Using differential interference contrast microscope observed striped rolling defects on the edge regions of Heavily doped < 100 > polished silicon wafers. Expounded the formation mechanism of the stripe rolling defects by analyzing the relationship between stripe rolling defects and the impurities distribution in heavily doped silicon crystal and the surface corrosion characteristics of <100> crystal orientation. Compared the surface microtopography with different polishing process conditions, researched the influence of polishing process conditions on surface striped rolling defects. Got polished silicon wafers with highly smooth surface, good consistency and no edge stripe rolling defects using three steps polishing process,.Keywords: Stripe rolling defects; Microtopography; Polished wafers Document Code: A Article ID: 1001-3474(2012)05-0312-04随着半导体工艺技术的不断进步,微机械与微电子电路对硅单晶衬底片的要求越来越高[1,2]。
The Boy in the Striped Pyjamas Orientation Questions

‘The Boy in the Striped Pyjamas’: OrientationRead pages 1 – 32 and answer the following as you read:General Questions1.When and where is the novel set?1942 in Germany2.Describe the type of language used.Narrate3.Is the story told in first, second or third person? Who is the narrator?No , it isn’t.Comprehension Questions1.Explain why Bruno and his family have to move.Because of his father has a very special job that needs doing there.2.What does Bruno know about his father’s job?He wasn’t entire ly sure what job his father did, he just knows father is a veryimportant solider.3.Thinking about the context, and the narrator, who do you think ‘The Fury’ might be?The Jew4.How do you think Bruno’s mother feels about moving? What evidence is there tosupport your answer?she just simply think5.a) Describe, in your own words, the atmosphere of the new house.b) How does it compare to where the family lived in Berlin?6.What is Bruno’s attitude on the family’s arrival at the new house? Why does he feelthis way? Find evidence to support your answer.7.What are we told, on both pages 1 and 17, about Bruno’s father’s attitude towardsthe maid? What might it suggest about his character?8.How does Bruno feel about the soldier that he sees in his house? What makes himfeel this way?9.Thinking again about the context, what could ‘Out-With’ be?10.Who do you think the children might be that Bruno saw outside of his window?What evidence is there to support your answer?Vocab:Find the definition of the following terms:a)Splutteringb)Desolatec)Restrictiond)Consideration。
An efficient orientation filter for inertial and inertialmagnetic sensor arrays

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4 Experimentation 4.1 Equipment . . . . . . . . . . . . . . . . 4.2 Orientation from optical measurements 4.3 Calibration of frame alignments . . . . 4.4 Experimental proceedure . . . . . . . . 5 Results 5.1 Typical results . . . . . . . . . 5.2 Static and dynamic performance 5.3 Filter gain vs. performance . . . 5.4 Sampling rate vs. performance . 5.5 Gyroscope bias drift . . . . . . 6 Discussion 7 Conclusions
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A IMU filter implementation optimised in C B MARG filter implementation optimised in C
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溴虫氟苯双酰胺对黄曲条跳甲的生物活性及防治效果分析

农业灾害研究 2023,13(8)溴虫氟苯双酰胺对黄曲条跳甲的生物活性及防治效果分析袁家祥,张惠娇,詹仰进深圳市绿之源有害生物防治有限公司,广东深圳 518112摘要 采取药物喷雾喷洒方法开展田间药效试验,主要检测和评价溴虫氟苯双酰胺对黄曲条跳甲的生物活性,分析药效作用效果和对植株的影响。
结果表明,溴虫氟苯双酰胺安全程度高,杀虫效果明显;施药期间,未对油菜生长产生不良影响;最佳用药剂量为124 g/kg。
结果表明,溴虫氟苯双酰胺生物活性高,能够有效防治曲条跳甲,通过科学配比药物剂量,能够提高对黄曲条跳甲防治效果。
关键词 溴虫氟苯双酰胺;黄曲条跳甲;生物活性;防治效果中图分类号:S436.35 文献标识码:B 文章编号:2095–3305(2023)08–0089-03黄曲条跳甲在我国分布较为广泛,主要危害菜、豆等蔬菜类,造成的经济损失较为严重。
黄曲条跳甲属于寡食性昆虫,喜好油菜、白菜、萝卜等,侵蚀能力强,主要取食上述蔬菜的叶片,影响蔬菜茁壮成长,引发虫害,最终造成植物植株死亡。
黄曲条跳甲繁殖能力也很强,其幼虫主要集中在植物的根茎部位,损害甚至是咬断植物的根系,导致软腐病的传播速度加快,蔬菜生产产量和品质降低,难以满足消费者对绿色无公害蔬菜需求。
现阶段,主要采取化学防控方法治理黄曲条跳甲,防治效果较好,但在药效方面需要进一步测评。
研究发现,溴虫氟苯双酰胺对黄曲条跳甲有一定的防治效果,通过开展田间试验测定,可进一步明确用药剂量,最大限度上提高黄曲条跳甲防治效果,降低蔬菜损失,提高种植户经济效益[1]。
基于此,就溴虫氟苯双酰胺对黄曲条跳甲生的生物活性展开分析,重点研究溴虫氟苯双酰胺用药安全性,在提高黄曲条跳甲综合治理水平同时,保证蔬菜食品安全性。
1 材料与方法1.1 试验药剂本试验选取溴虫氟苯双酰胺杀虫剂作为试验药剂,并选用常规杀虫剂作为对照进行安全性对比。
1.2 昆虫样本研究时间为试验田黄曲条跳甲高发期,研究样本为黄曲条跳甲。
optimal和optimum英文辨析

optimal和optimum英文辨析《Optimal vs. Optimum: A Comparative Analysis》In the English language, there are often multiple words that have similar meanings but subtle differences in usage. Two such words are “optimal” and “optimum”. While they both refer to the best or most favorable option, there are some key distinctions between the two.The word “optimal” is an adjective that means the most desirable or best possible. It implies that there is a range of options, and the one being described as optimal is the one that offers the greatest benefit or advantage. For example, “The optimal solution to this problem would be to implement a new system.” Here, “optimal” suggests that there are other potential solutions, but the one being proposed is the best among them.On the other hand, “optimum” is also an adjective, but it is often used in a more specific or technical context. It refers to the point or condition at which something is at its best or most efficient. For instance, “The optimum temperature for this chemical reaction is 50 degrees Celsius.”In this case, “optimum” indicates a specific value or range that is considered the most favorable for a particular process or outcome.One way to think about the difference between “optimal” and “optimum” is that “optimal” is more subjective and depends on the specific circumstances or goals, while “optimum” is more objective and based on specific criteria or measurements. Another difference is that “optimal” can be used to describe a wide range of situations, while “optimum” is often used in more specialized fields such as science, engineering, or economics.In some cases, the two words can be used interchangeably, but it is important to be aware of the subtle differences in meaning and usage.Using the wrong word can lead to confusion or a less precise expression of ideas. For example, saying “The optimum solution to this problem is to do nothing” might sound odd, as “optimum” typically implies a specific action or condition that is considered the best. In this case,“optimal” would be a more appropriate choice.To further illustrate the differences between “optimal” and “optimum”,let’s consider a few examples:In a business context, finding the optimal marketing strategywould involve considering various factors such as target audience,budget, and competition. The goal is to identify the approach that is most likely to lead to success. On the other hand, determining the optimum inventory level would involve analyzing data such as sales trends, lead times, and carrying costs to find the level that minimizes costs while meeting customer demand.In a medical setting, choosing the optimal treatment plan for a patient would depend on their specific condition, medical history,and personal preferences. The doctor would aim to select thetreatment that offers the best chance of recovery with the least side effects. However , when it comes to setting the optimumdosage of a medication, it would involve precise calculations based on the patient’s weight, age, and other factors to ensure the most effective and safe treatment.In a sports context, an athlete might strive for the optimalperformance by training hard, eating well, and getting enoughrest. This would involve finding the right balance between different aspects of their training and lifestyle. On the other hand, a coach might look for the optimum lineup or strategy for a particulargame based on the strengths and weaknesses of the team and the opponent.While “optimal” and “optimum” are similar in meaning, they have distinct nuances that can affect their usage. Understanding thesedifferences can help us communicate more precisely and effectively in various contexts. Whether we are discussing business, science, or any other field, choosing the right word can make a significant difference in how our ideas are understood. So, the next time you are faced with a choice between “optimal” and “optimum”, take a moment to consider • • •the specific context and intended meaning to ensure you are using the most appropriate word.。
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a r X i v :c o n d -m a t /0106484v 2 [c o n d -m a t .m e s -h a l l ] 7 M a y 2002Optimal orientation of striped states in the quantum Hall system against externalmodulationsT.Aoyama,K.Ishikawa,and N.MaedaDepartment of Physics,Hokkaido University,Sapporo 060-0810,Japan(February 1,2008)We study striped states in the quantum Hall system around half-filled high Landau levels and obtain the optimal orientation of the striped state in the presence of an external unidirectional periodic potential.It is shown that the optimal orientation is orthogonal to the external modulation in the Coulomb dominant regime (the orthogonal phase)and is parallel in the external modulation dominant regime (the parallel phase).The phase boundary of these two phases is determined numerically in the parameter space of the strength and wave number of the external modulation at the half-filled third Landau level.PACS numbers:73.40.Hm,73.20.DxThe modern semiconductor technology yields ex-tremely pure two-dimensional (2D)electron systems in heterostructures.In the presence of a strong perpendic-ular magnetic field,various kinds of new phenomena in addition to the ordinary quantum Hall effect are found in the systems.The effect of a crystal structure has been believed to be ignored,because the magnetic length is much larger than the lattice constant of the host crystal.Hence,the system is supposed to have an orientational symmetry,that is,physics in the x direction and y direc-tion is equivalent.In the end of the last century,how-ever,highly anisotropic states,which have an enormous anisotropy in magnetoresistances,were observed around the half-filled high Landau level (LL)[1–4].This obser-vation agrees with the striped state which was predicted in a mean field theory [5,6].The charge density of the striped state is uniform in the one direction and peri-odic in the orthogonal direction.The Hartree-Fock (HF)theory and numerical calculations in a small system for striped states were studied recently at the filling factor where the anisotropy is observed and the results seem to support the striped state [7–10].The experiments show that the stripe direction is parallel to the specific crystal-lographic direction.The origin of the orientation of the striped state is still puzzling [11,12].It is naturally considered that the origin of the orien-tation is related to yet unknown and very weak periodic structure in the sample.Therefore,we suppose that the origin to determine the orientation can be modeled by an external modulation in the 2D electron system [13].We compute the energy of striped states in the quan-tum Hall system with an external modulation and find the optimal orientation.It is naively expected that the external modulation breaks the orientational symmetry and makes the orientation of the striped state parallel to the modulation.Unexpectedly,we find the counter-intuitive phase in which the optimal orientation of the striped state becomes orthogonal to the external modu-lation,and the other phase in which the optimal orienta-tion is parallel to the external modulation depending on the strength and wave number of the modulation.Our results are consistent with the recent experiments [11,14].Let us consider a 2D electron system in a perpendic-ular uniform magnetic field B and a unidirectional peri-odic potential.The total Hamiltonian H of the system is written as H =H 0+H 1+H 2,H 0=ψ†(r )(ˆp +e A )22ρ(r )V (r −r ′)ρ(r ′)d 2rd 2r ′,(1)H 2=gρ(r )cos(K ·r )d 2r,where ˆp α=−i ¯h ∂α,∂x A y −∂y A x =B ,V =q 2/r ,q 2=e 2/4πǫ(ǫis a dielectric constant).ψ(r )is the elec-tron field,and ρ(r )=ψ†(r )ψ(r ).H 0is the free Hamil-tonian,which is quenched in the LL.H 1is the Coulomb interaction term and H 2is the external modulation term.We ignore the spin degree of freedom.The electron field is expanded by the momentum state |f l ⊗βp in von Neumann lattice (vNL)formalism [15]asψ(r )=∞ l =0BZd 2p2π¯h /eB and r s is an asymmetric parameter.Weconsider only the l th LL state and ignore the LL mixing.Hence,H 0turns out to be constant and we omit the free Hamiltonian.Fourier transformed density operator ˜ρin the l th LL is written in vNL formalism as1˜ρ(k)= BZ d2p4πˆkx(2p y−aˆk y)],whereˆk=(r s k x,k y/r s)and f l(k)=L l(a2k28π, here L l is the Laguerre polynomial.We substitute Eq.(3) into H1and H2andfind the ground state in two pertur-bative approaches.In thefirst approach,perturbative expansions with respect to g in H2,which describe the Coulomb dominant regime,are applied.In the second approach,perturbative expansions with respect to q2/a in H1,which describe the external modulation dominant regime,are applied.Thefilling factor isfixed at l+1/2in the following calculation and numerical calculations are performed at l=2.(I)H2as a perturbation:We obtain the ground state of H1in the HF approximationfiing the HF ground state,we treat H2as a perturbation.This ap-proximation is relevant in the Coulomb dominant regime, g≪q2/a.We use the striped state|Ψ1 which is uniform in the y direction as the unperturbed ground state of the H1.In the HF approximation,this is given as[16,9]|Ψ1 =N1|p x|≤π,|p y|≤π/2b†l(p)|0 ,(4)where|0 is the vacuum state for b l and N1is a normal-ization factor.The Fermi surface is parallel to the p x axis.The density of this state Ψ1|ρ(r)|Ψ1 is uniform in y direction and periodic in x direction with a period ar s[9,16].The orthogonality of the Fermi surface in the momentum space and the density in the coordinate space plays important roles and is reminiscent of the Hall effect. The one-particle spectrum is given byǫHF=ǫH+ǫF,ǫH=2r s q2n2,(5)ǫF=−r s q22+p y+2πn−π2πh l(k),(6)where h l(k)=f l( k2x+(k y r s/a)2.ǫHF depends on only p y,and the self-consistency condi-tion for|Ψ1 is satisfied.The Fermi velocity is in the y direction.The HF energy per particle is calculated as E HF(r s)= Ψ1|H1|Ψ1 /N where N is a number of electrons.E HF is a function of r s and calculated as E HF= π/2−π/2dp y2N Ψ1|(˜ρ(K)+˜ρ(−K))|Ψ1 .(7)The operator˜ρ(K)moves an electron in the Fermi seaby aˆK in the momentum space.Therefore,except forthe case that aˆK y coincides with a multiple of2π,∆E(1)vanishes.We consider only the range|aˆK y|<πwhich issufficient to compare our results with experiments.The perturbation energy per particle in the second or-der∆E(2)is written as∆E(2)(g,θ,K)= π2−aˆK y dp yǫHF(p y+aˆK y)−ǫHF(p y),(8)whereˆK y=K sinθ/r mins,θis an angle between the stripedirection and external modulation.We obtain the totalenergy per particle in the Coulomb dominant regime asE Coul(g,K,θ)=E HF(r mins)+∆E(2)(g,K,θ).(9)Theθdependence of∆E(2)is shown in Fig.1at the half-filled third LL.As seen in Fig.1,the energy is alwaysminimum atθ=π/2,that is,the optimal orientationof the striped state is orthogonal to the external modu-lation.We call this phase the orthogonal phase.Notethat∆E(2)vanishes andθdependence disappears whenK equals the zeros of f l(K).In this case,the externalmodulation loses control of the stripe direction.(II)H1as a perturbation:We diagonalize H2first bychoosing the y axis of vNL to be parallel to the externalmodulation and r s=2π/aK,that is,the period of thestriped states ar s equals the wave length2π/K of theexternal ing this vNL basis,we treat H1as a perturbation.This approximation is relevant in theexternal modulation dominant regime,g≫q2/a.Thenthe state|Ψ1 is the ground state of H2.The externalmodulation term readsH2=−|gf l(K)| BZ d2pπ|gf l(K)|.The perturbation energy perparticle is calculated as E HF(r s)= Ψ1|H1|Ψ1 /N withr s=2π/aK.Hence,the total energy per particle in theexternal modulation dominant regime is given byE ext(g,K)=E HF(2π/aK)−2parallel phase has lower energy and is realized at large g. The phase boundary is calculated by solving the equation in g,E ext(g,K)=E Coul(g,K,π/2)for various value of aK.The phase diagram in g-K plane is shown in Fig.3, where orthogonal and parallel phases are indicated by I and II respectively.The dashed lines correspond to the zeros of f2(K),aK=2.714and6.550,at which the stripe direction is undetermined.At aK=2π/r min=2.544, where the period of the external modulation coincides with the optimal period of the stripe,the phase bound-ary touches the K axis.The direct verification of our results is made by ob-serving a transition between the two phases by tuning the extenal modulation.The necessary wave length of the modulation for the verification is on the order of2a, which is about100nm at B=2T.Recently,the unidirec-tional lateral superlattice with a period92nm is achieved on top of the2D electron system[14].The experiment shows that the magnetoresistance orthogonal to the ex-ternal modulation has a shallow and broad dent between two peaks aroundν=9/2.The magnetoresistance par-allel to the external modulation does not have the same structure aroundν=9/2.Anisotropy observed in this experiment is small due to the low mobility compared with experiments of striped states[1–4].The strength of the modulation is estimated as g=0.015meV.The parameters(g,K)=(0.006q2/a,3.097/a)correspond to this experimental setting,and are shown as X in Fig.4. X belongs to the orthogonal phase.In this phase,the one-particle dispersion has no energy gap in the orthogo-nal direction and has an energy gap in the parallel di-rection to the external modulation.Hence,the mag-netoresistance orthogonal to the external modulation is strongly modified by the injected electric current com-pared with the parallel magnetoresistance.This is con-sistent with the experiment.With a slightly larger period 115nm,orthogonal magnetoresistance aroundν=9/2is structureless.In this case,the corresponding parameters (g,K)=(0.014q2/a,2.478/a)are shown as Y in Fig.4 [20].Y belongs to the parallel phase.Hence,there is an energy gap in orthogonal direction to the external modu-lation and the magnetoresistance in this direction is not modified strongly by the injected electric current.This is also consistent with the experiment.We hope that a similar experiment with a higher mobility sample will give more clear evidence for our results.In the half-filled lowest LL,the anisotropic effect is ob-served under the external modulation[21].The semiclas-sical composite fermion theory is proposed for this exper-iment[22].In this theory,it is assumed that anisotropic transport is caused by the density modulation.On the other hand,we study the striped state under the external modulation in the half-filled higher LL.Note that the ori-gin of the anisotropy in the present case is spontaneous stripe formation rather than the external modulation. It seems difficult to understand how the orthogonal phase is realized contrary to the naive expectation that two striped structures tend to be parallel.To understand the reason,it is convenient to consider the striped state in the momentum space.Since the Fermi surface of the striped state isflat as seen in Eq.(4),a perturbation with a wave number vector perpendicular to the Fermi surface affects the total energy most strongly.Therefore the or-thogonal phase could be realized in a small external mod-ulation.The point of our theory is that the meanfield theory has theflat Fermi surface.Thefluctuation around the meanfield has been studied but discussions seem un-settled yet[17–19].Comparisons between experiments with an in-plane magneticfield[3,4,23]and HF calcula-tions indicate that the meanfield energy is good approx-imation for the striped state[7,8].Higher order correc-tions are expected to be small because the Fermi velocity diverges due to the Coulomb interaction[16].We esti-mate∆E(2)in the RPA approximation to the density cor-relation function asπRPA00(k)=π00(k)/(1−˜V(k)π00(k)). The results are shown in Fig.1by dashed lines.As seen in thisfigure the correction is small actually.In summary it is shown that a weak external modula-tion determines the orientation of the striped state and there are two phases in the2D parameter space of the strength and wave number of the external modulation, that is,the orthogonal phase and parallel phase.In the former phase,the optimal orientation of the striped state is orthogonal to the external modulation.In the latter phase,the optimal orientation is parallel to the external modulation.The phase diagram is obtained numerically at the half-filled third LL.We believe that ourfindings shed a new light on the origin of an orientation of striped states in quantum Hall systems.We thank A.Endo and Y.Iye for useful discus-sions.This work was partially supported by the special Grant-in-Aid for Promotion of Education and Science in Hokkaido University provided by the Ministry of Educa-tion,Science,Sports,and Culture,and by the Grant-in-Aid for Scientific Research on Priority area(Physics of CP violation)(Grant No.12014201).Rev.Lett.76,499(1996);M.M.Fogler,A.A.Koulakov,and B.I.Shklovskii,Phys.Rev.B 54,1853(1996).[6]R.Moessner and J.T.Chalker,Phys.Rev.B 54,5006(1996).[7]T.Jungwirth,A.H.MacDonald,L.Smrˇc ka,and S.M.Girvin,Phys.Rev.B 60,15574(1999).[8]T.Stanescu,I.Martin,and P.Phillips,Phys.Rev.Lett.84,1288(2000).[9]N.Maeda,Phys.Rev.B 61,4766(2000).[10]E.H.Rezayi,F.D.M.Haldane and K.Yang,Phys.Rev.Lett.83,1219(1999).[11]R.L.Willett,J.W.P.Hsu,D.Natelson,K.W.West,and L.N.Pfeiffer,Phys.Rev.Lett.87,126803(2001).[12]K.B.Cooper,M.P.Lilly,J.P.Eisenstein,T.Jungwirth,L.N.Pfeiffer,and K.W.West,Solid State Commun.119,89(2001).[13]The stripe or strings formation due to crystal strucure is studied in different systems.See for example,F.V.Kus-marutsev,Phys.Rev.Lett.84,530(2000);D.I.Khom-skii and K.I.Kugel,Europhys.Lett.55,208(2001)[14]A.Endo and Y.Iye,Solid State Commun.117,249(2001);other interpretation of this experiment is the re-entrant integer quantum Hall effect;see K.B.Cooper,M.P.Lilly,J.P.Eisenstein,L.N.Pfeiffer,and K.W.West,Phys.Rev.B 60,R11285(1999).[15]K.Ishikawa,N.Maeda,T.Ochiai,and H.Suzuki,Phys-ica E 4,37(1999);N.Imai,K.Ishikawa,T.Matsuyama,and I.Tanaka,Phys.Rev.B 42,10610(1990).[16]K.Ishikawa,N.Maeda,and T.Ochiai,Phys.Rev.Lett.82,4292(1999);K.Ishikawa and N.Maeda,Physica B 298,159(2001);cond-mat/0102347.[17]E.Fradkin and S.A.Kivelson,Phys.Rev.B 59,8065(1999).[18]A.H.MacDonald and M.P.A.Fisher,Phys.Rev.B 61,5724(2000).[19]R.Cˆo t´e and H.A.Fertig,Phys.Rev.B 62,1993(2000).[20]A.Endo (private communication).[21]R.L.Willett,K.W.West,and L.N.Pfeiffer,Phys.Rev.Lett.78,4478(1997).[22]F.von Oppen,A.Stern,and B.I.Halperin,Phys.Rev.Lett.80,4494(1998).[23]W.Pan,T.Jungwirth,H.L.Stormer,D.C.Tsui,A.H.MacDonald,S.M.Girvin,L.Smrˇc ka,L.N.Pfeiffer,K.W.Baldwin,and K.W.West,Phys.Rev.Lett.85,3257(2000).0.20.40.60.811.21.41.6θ-0.04-0.03-0.02-0.01E (θ)K =2K =5K =7Fig. 1.The θ-dependence of ∆E (2)(g,K,θ)for aK =2,5,7.The solid lines and dashed lines stand for the HF calculation and RPA approximation,respectively.The unit of energy is g 2a/q 2-1.5-1-0.500.51 1.52g-0.875-0.85-0.825-0.8-0.775-0.75-0.725E n e r g yK =2Fig. 2.The total energy of the striped state obtained in (I)and (II)for aK =2.The unit of energy and g is q 2/a .The straight line stands for E ext (g,2/a )and the parabolic line stands for E Coul (g,2/a,π/2).The lower energy state is represented by the bold line.0.250.50.751 1.25 1.5 1.752g1234567K I IIIIIIIFig. 3.The phase diagram of the striped state at the half-filled third LL.The unit of g is q 2/a and the unit of K is 1/a .The regions denoted by I and II correspond to the orthogonal phase and parallel phase,respectively.The dashed lines represent the zeros of f 2(K ),at which the stripe direction is undetermined.0.0050.010.0150.02g2.42.62.833.2KXYIIIFig. 4.The two points X and Y in the phase diagram stand for the experimantal data [14].4。