FSS207中文资料

Marking : S207
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained here
10
0 --60
--40
--20
0
20
40
60
80
100
Gate-to-Source Voltage, VGS – V
IT01471
Ambient Temperature, Ta – ˚C
No.6346-2/4
元器件交易网 FSS207
Forward Transfer Admittance, | yfs | – S
元器件交易网
Ordering number:ENN6346
N-Channel Silicon MOSFET
FSS207
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · 2.5V drive.
=-Ta
25
°C
10 7 5 3 2 1.0 7 5 3 2
°C 75
Ta= 75°C
0.01 0.1
Drain Current, ID – A
1.0
10
0
0.2
0.4
0.6
--25°C
0.8 1.0
25°C
25
°C
0.1 7 5 3 2
1.2
1.4 IT01474
Diode Forward Voltage, VSD – V
Switching Time Test Circuit
VDD=10V 4V 0V VIN ID=10A RL=1Ω VIN
D
PW=10µs D.C.≤1%
VOUT
G
P.G
50Ω
S
FSS207
9 8
8.0V
2.5V 2.0 V
10
ID -- VDS
20 18 16
ID -- VGS
VDS=10V
Drain Current, ID – A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-1507 No.6346-1/4
1.0
bo
ar
d(
10
00
m
0.5
m2 ×0
.8m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C
IT01479
No.6346-3/4
元器件交易网 FSS207
Package Dimensions
unit:mm 2116
[FSS207]
8 5
0.3 4.4
5.0
1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
100 0 2 4 6 8 10 12 14 16 18 20
0 0
5
10
15
20 25 30 35 40
45 50 55 60 65 70 75 IT01476
Drain-to-Source Voltage, VDS – V
1000 7
IT01475 100 7 5 3 2
Total Gate Charge, Qg – nC
100 7 5 3 2
tr td(on)
Operation in this area is limited by RDS(on).
era
tio
n
10 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID – A
2.5
5 7 100 IT01477
0.01 0.01
Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm)
7 6 5 4 3 2 1 0 0 0.1
Drain Current, ID – A
6.0V
3.0V 4.0V VGS=1.5V
14 12 10 8
5°C Ta= 7
0.2 0.4 0.6 0.8 1.0 1.2 1.4
6 4 2
0.2
0.3
0.4
0.5 IT01469
0 0
--25
1.6 1.8
°C
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
35 30 25 20 15 10 5 0 0
20
ID=10A 2A
15
VG 2A, I D=
2.5 S=
V
10
=4.0V A, V GS 0 1 = ID
5
1
2
0.595
1.27
0.43
Conditions
0.1
1.8max
1
4
1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Ratings 20 ±10 10
6.0
SW Time -- ID
td(off) tf VDD=10V VGS=4V Drain Current, ID – A
ASO
IDP=52A ID=10A
10
DC op
100µs
10 0m s
Switching Time, SW Time – ns
5 3 2
1m s
ms
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS – V
5 7 100 IT01478
PD -- Ta
Allowable Power Dissipation, PD – W
2.0
M
ou
nt
ed
1.5
on
ac
er
am
ic
元器件交易网 FSS207
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A IS=10A, VGS=0 Ratings min typ 40 260 260 280 75 10 12 1.0 1.2 max Unit ns ns ns ns nC nC nC V