KLA缺陷检查培训
12.KLA自动外观检查
12. KLA自动外观检查谭莉、田广彦、黄翔、沈洵自动外观检查是通过光学CCD Camera，对相邻象素之间感度的比较来判断缺陷的有无，从而将缺陷的个数、位置检测出来，并对缺陷进行分类和确认。
自动外观检查设备主要由两个部分组成：①自动外观检查装置②外观检查Review装置（外观检查的辅助设备）。
以下对两个装置分别加以说明（KLA为厂商名）。
一、自动外观检查装置1、目的判断缺陷的有无，检出缺陷的个数和缺陷在基板上的位置。
2、适用工程⑴产品检查①G检主要用于SFT型。
对G层光刻胶剥离后的G-Short、G-Open进行全检，对发生G-COM 短路的基板进行抽检。
②最终检查（全检）阵列基板全部完成后的全数检查，对SFT和TN都适用。
阵列基板以点缺陷发生的概率较高。
⑵工艺检查①CVD成膜后的检查（抽检）可用来确认CVD装置的发尘状况。
②Inline PR后的检查（抽检）防止Inline PR装置突发性的异常，及时对设备进行维护。
③共通缺陷检查（抽检）防止曝光时由于Mask上的异物，而引起在基板的同一处产生同一缺陷。
④刻蚀异常和剥离残余的检查量产时，先进行Array Test，当异常原因无法检测出来时，再利用KLA自动外观检查装置对每一道工序进行检查；而条件设定初期，对每一次刻蚀和剥离后都要进行KLA检查。
另外，需注意的是：如已知一个Lot中的所有基板都存在缺陷，只进行抽检；若只有一两片基板有误，则要进行全检。
因此可由不良发生率和经验来决定是抽检还是全检。
3、原理⑴装置构成自动外观检查装置主要由光学系统、XY 基台、用户界面、计算机以及基板搬送系统构成。
光学系统由反射镜、透射镜、自动对焦系统、CCD Camera 、图像传感器等组成，结构简图如图12.1，其中透射镜有8倍和4倍之分，且可自由更换。
⑵检出原理通过在图形之间来回往复扫描，对相邻像素进行比较而将缺陷检出。
如图12.2所示，①A 和B 比较→A ≠B ，②B 和C 比较→B ≠C ，③B 有缺陷。
KLA缺陷检查培训ppt
➢24.Corrosion : Caused by etch strip chamber or bad environment. This type defect is 100% killer defect.
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➢10.Residue ：Always happen after wet station clean.
➢11.Patten abnormal : Roughness,Defocus,Patten shift and so on.
Roughness
Defocus
Patten shift
Patten Abnormal
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➢8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO.
Poly
Metal
➢9.Grape like defect:Induces by PHOTO PU.
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➢20. Slurry:
➢21. PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon
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➢22.Arcing: ➢23.Line open:
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➢12.Concave: COP（ Crystal oriented pits ）, Oxide Loss，Pits. ➢13.Peeling : Pattern shift or missing（W plug is one of peeling,always appear at wafer edge.）
KLA缺陷检查培训
➢Overview
1
➢21xx Capabilities
2
3
Run Overview
4
Run one wafer
Inspection Queue
5
6
7
8
9
Stopping the Inspection
10
Deefects ?
➢ To improve production yields, defects need to be monitored and statistically analyzed at each stage of wafer production.
11
Defect Sort
➢1.False : Found nothing after review with inspection data. ➢2.Unkown : Defects were found but there is no suitable defect code to assign. ➢3.Fall on particle : Particle on surface of patten.
23
24
14
➢8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO
Poly
Metal
➢9.Grape like defect:Induces by PHOTO PU. 15
➢10.Residue ：Always happen after wet station clean.
➢11.Patten abnormal : Roughness,Defocus,Patten shift and so on.
KLA缺陷检查培训解读
19.Grain : Including poly or metal grain.
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20. Slurry:
21. PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon
4.In film particle : Particle was contained in film, such as poly, HDP, metal and so on.
HDP
Poly
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5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :
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Defect Sort
1.False : Found nothing after review with inspection data. 2.Unkown : Defects were found but there is no suitable defect code to assign. 3.Fall on particle : Particle on surface of patten.
KLA Basic Operation
Overview
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21xx Capabilities
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Run Overview
(优选)缺陷检查培训
➢4.In film particle : Particle was contained in film, such as poly, HDP, metal and so on.
HDP
Poly 12
➢5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :
20
➢20. Slurry:
➢21. PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon
21
➢22.Arcing: ➢23.Line open:
22
➢24.Corrosion : Caused by etch strip chamber or bad environment. This type defect is 100% killer defect.
14
➢8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO.
Poly
Metal
➢9.Grape like defect:Induces by PHOTO PU. 15
➢10.Residue ：Always happen after wet station clean.
➢11.Patten abnormal : Roughness,Defocus,Patten shift and so on.
Roughness
Defocus
Patten shift
圆片检测课KLA AIT步骤
KLA2135的标准操作规程：1、确认来片的流程单，GUI系统与片盒、圆片、圆片数量是否相符。
2、将需测量的圆片放入标准圆片架（黑色）中，进行理片，找出需检测圆片的Slot位置。
3、确认设备状态是否正常，打开防尘罩门。
4、将测量圆片及片架轻放入片架台，确认片架放在片架台的合适位置。
5、按load键，关闭防尘罩门，片架进入取片位置，机械臂自动扫描。
6、在菜单Main中用鼠标选Run。
7、在Run的菜单下选中Directory。
8、在Name>下输入所需测量的产品名*按Enter，根据层次用鼠标左键选择正确的菜单。
9、在Run的菜单下选中Name Lot，输入批号，按Enter。
10、在Run的菜单下选中Lot Plan，点Edit Plan，鼠标双击左键选择需要测量的圆片位置号，单击右键返回上级菜单。
11、将Run的菜单下Auto Transfer选中On。
12、在Run的菜单下选中Wafer ID，点Edit ID输入相应的片号，单击右键返回。
13、点Run，开始自动检测。
14、检测结束后记录在Lot Summary窗口中读取并将缺陷数目及缺陷密度的数据记录在流程单及GUI中。
15、按Unload键将片架退出，根据GUI系统判断数据是否超范围，如无将圆片送出，如有通知工艺处理，处理结束后将圆片送出。
KLA2135手动对位步骤1、在Run的菜单下选中Directory，在Name>下输入所需测量的菜单。
2、输入需测量的批号，选择需测量的Slot位，输入片号。
3、在Run的菜单下点Mor e→Manual Load→Load Wafer,选择你需要测量的Slot。
4、点Manual Align后跳出蓝色对话框点GO。
5、在低倍下粗对位，将十字导航键移至对位图形旁，点左键，设备自动跳至第二个对位点，重复粗对位步骤。
6、在高倍下精对位，将十字对位键移至对位图形旁，点左键，设备自动跳至第二个对位点，重复精对位步骤。
KLA缺陷检查培训
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➢14.Blind : CT or Via have not been opened.
➢15.Patten damage :
Metal damage
➢Poly broken is patten damage too,always happen during High Imp.
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➢24.Corrosion : Caused by etch strip chamber or bad environment. This type defect is 100% killer defect.
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KLA Basic Operation
➢Overview
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➢21xx Capabilities
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Run Overview
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Run one wafer
Inspection Queue
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Stopping the Inspection
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Defect Overview
Why monitor defects ?
➢ To improve production yields, defects need to be monitored and statistically analyzed at each stage of wafer production.
光刻缺陷检查培训英文版
光刻缺陷检查培训英文版IntroductionPhotomask defect inspection is an essential step in the semiconductor manufacturing process. The accuracy and precision of defect inspection directly impact the quality and reliability of the final semiconductor products. This training program is designed to provide comprehensive knowledge and skills for professionals involved in photomask defect inspection.Training Objectives1. Understand the importance of photomask defect inspection in semiconductor manufacturing.2. Gain knowledge about different types of defects and their impact on semiconductor fabrication.3. Learn the principles and techniques of photomask defect inspection.4. Understand the use of advanced inspection tools and equipment.5. Develop practical skills for identifying and analyzing photomask defects.Training Content1. Overview of Photomask Defect Inspection- Importance of defect inspection in semiconductor manufacturing- Types of defects and their impact on semiconductor fabrication- Challenges and requirements for defect inspection2. Principles and Techniques of Photomask Defect Inspection- Principles of optical and electron beam inspection- Basic imaging and analysis techniques- Defect detection algorithms and software tools3. Advanced Inspection Tools and Equipment- Introduction to advanced inspection tools- Use of high-resolution imaging systems- Application of nanotechnology in defect inspection4. Practical Skills for Photomask Defect Identification- Hands-on exercises for defect identification- Analysis of real-world photomask defects- Troubleshooting common inspection issuesTraining MethodologyThe training program will consist of a combination of lectures, hands-on exercises, and case studies. The training will be conducted by industry experts with extensive experience in photomask defect inspection. Participants will have access to state-of-the-art inspection tools and equipment for practical training. The training will also include on-site visits to semiconductor manufacturing facilities to provide real-world exposure.Who Should AttendThis training program is suitable for professionals involved in semiconductor manufacturing, photomask fabrication, quality control, and defect inspection. It is also beneficial for engineers, technicians, and researchers working in the field of microelectronics and nanotechnology.Training DurationThe training program will be conducted over a period of five days, with each day consisting of eight hours of instruction and practical exercises. Participants will receive a certificate of completion at the end of the training.ConclusionPhotomask defect inspection is a critical aspect of semiconductor manufacturing, and the demand for skilled professionals in this field is increasing. By attending this training program, participants will gain comprehensive knowledge and practical skills that will enhance their capabilities in photomask defect inspection. This training will also provide valuable networking opportunities with industry experts and peers, further enhancing the professional growth and career prospects of the participants.Overview of Photomask Defect InspectionPhotomask defect inspection plays a pivotal role in the semiconductor manufacturing process. The precision and accuracy of defect inspection are crucial as they directly impact the quality and reliability of the final semiconductor products. In the competitive semiconductor industry, any defects in the photomask can lead to significant yield losses and affect the performance and reliability of integrated circuits. Therefore, having a comprehensive understanding of photomask defect inspection is essential for professionals in the field.Importance of defect inspection in semiconductor manufacturingThe photomask, a master template for transferring circuit patterns onto wafers, is a critical component in semiconductor fabrication. The presence of defects on the photomask can lead to faulty patterns being transferred onto the wafer, resulting in defective chips. As the complexity and miniaturization of semiconductor devices continue to advance, the demand for defect-free photomasks becomes increasingly critical. This underscores the importance of thorough defect inspection to ensure the quality and reliability of semiconductor products.Types of defects and their impact on semiconductor fabricationPhotomask defects can manifest in various forms, including particles, pinholes, pattern deviations, and others. These defects can arise during the fabrication process, handling, or usage of photomasks. Their impact on semiconductor fabrication can range from disrupting the formation of circuit patterns on the wafer to causing electrical failures in the final semiconductor devices. Therefore, a comprehensive understanding of the different types of defects and their potential ramifications is indispensable for professionals involved in photomask defect inspection.Challenges and requirements for defect inspectionPhotomask defect inspection presents several challenges due to the decreasing size of semiconductor features and the increasing complexity of circuit designs. As feature sizes shrink, the detection and characterization of defects become more challenging, requiring advanced inspection techniques and tools. Additionally, the demand for higher throughput and accuracy in defect inspection necessitates continuous advancements in inspection methodologies and equipment. Understanding these challenges and the evolving requirements for defect inspection is essential for professionals to stay abreast of industry standards and best practices.Principles and Techniques of Photomask Defect InspectionTo achieve robust defect inspection, professionals need to grasp the underlying principles and techniques of photomask defect inspection. This involves understanding the principles of optical and electron beam inspection, mastering basic imaging and analysis techniques, and familiarizing oneself with defect detection algorithms and software tools.Principles of optical and electron beam inspectionOptical inspection techniques utilize light to visualize and analyze defects on the photomask. Understanding the interaction of light with the photomask surface and the principles of imaging and contrast enhancement in optical inspection is fundamental. On the other hand, electron beam inspection leverages the high resolution and small wavelength of electrons to detect nanoscale defects on the photomask. Familiarity with the principles underlying electron beam inspection, including electron-matter interactions and signal detection, is integral for professionals engaged in this field.Basic imaging and analysis techniquesProfessionals need to be proficient in basic imaging and analysis techniques to effectively visualize, capture, and analyze defects on photomasks. This includes understanding contrast enhancement, image processing, and feature extraction methods to accurately identify and characterize defects. Moreover, mastering the use of microscopy and imaging software is essential to facilitate precise defect analysis and classification.Defect detection algorithms and software toolsThe application of advanced defect detection algorithms and software tools is critical for automating and optimizing the defect inspection process. Professionals should be well-versed in the use of image processing algorithms, machine learning techniques, and specialized defect detection software to enhance the efficiency and accuracy of defect identification. Knowledge of these tools enables professionals to streamline defect inspection workflows and improve overall inspection outcomes.Advanced Inspection Tools and EquipmentAs semiconductor technology continues to advance, the use of advanced inspection tools and equipment becomes indispensable for comprehensive defect inspection. Professionals need to be familiar with the latest inspection tools, such as high-resolution imaging systems and the application of nanotechnology in defect inspection.Introduction to advanced inspection toolsAdvanced inspection tools encompass a wide array of cutting-edge equipment designed to address the evolving demands of photomask defect inspection. These tools include advanced optical and electron beam inspection systems, scanning electron microscopes (SEM), and atomic force microscopes (AFM). Proficiently using and interpreting data from these advanced tools is crucial for professionals to conduct thorough defect analysis and characterization.Use of high-resolution imaging systemsHigh-resolution imaging systems play a vital role in capturing detailed images of photomask defects, especially as feature sizes continue to decrease. Professionals should be adept at operating high-resolution imaging systems, understanding the intricacies of image acquisition and interpretation, and utilizing advanced imaging techniques to uncover defects that may be imperceptible with traditional inspection methods.Application of nanotechnology in defect inspectionNanotechnology has significantly influenced defect inspection by providing the capability to detect and analyze nanoscale defects on photomasks. Professionals need to comprehend the principles of nanotechnology-based inspection techniques, such as electron beam microscopy and AFM, and their application in identifying and characterizing defects at thenanoscale. This knowledge is invaluable for addressing the challenges posed by shrinking feature sizes in semiconductor fabrication.Practical Skills for Photomask Defect IdentificationAcquiring practical skills for photomask defect identification is imperative for professionals engaged in defect inspection. Hands-on exercises, analysis of real-world photomask defects, and troubleshooting common inspection issues are essential components of developing these practical skills.Hands-on exercises for defect identificationPractical training involving hands-on exercises is essential for professionals to gain proficiency in defect identification. These exercises may involve using actual photomasks with intentionally introduced defects, allowing participants to apply inspection techniques and tools to identify and analyze defects. Additionally, hands-on training provides an opportunity for professionals to familiarize themselves with the operational aspects of inspection equipment.Analysis of real-world photomask defectsStudying real-world photomask defects enables professionals to encounter a diverse range of defects that occur in actual fabrication processes. By analyzing and classifying these defects, professionals can refine their skills in defect identification and gain insights into the types of defects commonly encountered in semiconductor manufacturing. This exposure is instrumental in preparing professionals to tackle the practical challenges of defect inspection in real-world settings.Troubleshooting common inspection issuesAs professionals engage in defect inspection, they may encounter various technical challenges and issues. Delving into troubleshooting common inspection issues equips professionals with the ability to address and circumvent potential obstacles in the defect inspection process. This practical skill is essential for maintaining inspection efficiency and ensuring accurate defect detection.Training MethodologyThe training program will adopt a comprehensive approach, encompassing a combination of lectures, hands-on exercises, and case studies to impart in-depth knowledge and practical skills in photomask defect inspection.LecturesIndustry experts with extensive experience in photomask defect inspection will deliver lectures covering fundamental principles, advanced techniques, and best practices in defectinspection. The lectures will provide participants with a solid theoretical foundation and insights into the latest developments in the field.Hands-on ExercisesPractical training sessions will offer participants the opportunity to engage in hands-on exercises for defect identification, utilizing advanced inspection tools and equipment. These exercises will reinforce theoretical knowledge and allow participants to hone their practical skills in defect inspection.Case StudiesAnalysis of real-world case studies will be incorporated into the training program, enabling participants to apply their knowledge and skills to analyze and address photomask defects encountered in actual semiconductor fabrication processes. This will enhance their problem-solving capabilities and prepare them for real-world defect inspection challenges.On-site VisitsThe training will include on-site visits to semiconductor manufacturing facilities, providing participants with firsthand exposure to the practical aspects of photomask defect inspection in an industrial setting. This exposure will facilitate a deeper understanding of the complexities and nuances of defect inspection in semiconductor fabrication.Who Should AttendThis training program is targeted towards professionals involved in semiconductor manufacturing, photomask fabrication, quality control, and defect inspection. It is also beneficial for engineers, technicians, and researchers working in the fields of microelectronics and nanotechnology. The program is suitable for individuals seeking to enhance their expertise in photomask defect inspection and stay updated with industry advancements.Training DurationThe training program will be conducted over a five-day period, with each day consisting of eight hours of instruction and practical exercises. The comprehensive duration of the program ensures that participants receive extensive theoretical knowledge, practical training, and exposure to real-world applications of photomask defect inspection. ConclusionIn conclusion, the training program on photomask defect inspection is designed to equip professionals with the requisite knowledge and practical skills that are essential for excelling in the field of semiconductor manufacturing. By delving into the principles, techniques, and application of advanced tools in defect inspection, participants will be well-prepared to address the challenges posed by shrinking semiconductor features andevolving industry requirements. Additionally, the hands-on training, case studies, and on-site visits included in the program will provide participants with a holistic understanding of defect inspection, enhancing their capabilities and career prospects in the semiconductor industry. This comprehensive training program offers a valuable opportunity for professionals to enhance their expertise and network with industry peers, further augmenting their professional growth and proficiency in photomask defect inspection.。
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➢Overview
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➢21xx Capabilities
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Page: 2
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Run Overview
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Page: 4
Run one wafer
Inspection Queue
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Page: 5
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➢14.Blind : CT or Via have not been opened.
➢15.Patten damage :
Metal damage
➢Poly broken is patten damage too,always happen during High Imp.
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➢16.W Residue : 1). Caused by Oxide Loss;
2). Caused by CMP.
➢17.Under_Pat ：Under layer pattern fail issue.
NORMAL
ABNORMAL
>Байду номын сангаас
Page: 19
➢18. Salicide_abnormal:Salicide poor formation. ➢19.Grain : Including poly or metal grain.
➢24.Corrosion : Caused by etch strip chamber or bad environment. This type defect is 100% killer defect.
>
Page: 23
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➢10.Residue ：Always happen after wet station clean.
➢11.Patten abnormal : Roughness,Defocus,Patten shift and so on.
Roughness
Defocus
Patten shift
Patten Abnormal
>
Page: 14
➢8.Ring like defect: Such as defects caused by ARC splash, usually related to PHOTO.
Poly
Metal
➢9.Grape like defect:Induces by PHOTO PU.
>
Page: 15
>
Page: 20
➢20. Slurry:
➢21. PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon
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➢22.Arcing: ➢23.Line open:
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Defect iamge: Micro
Macro
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➢6.Discolor : Color difference
➢7.Masking ：Should be etched but still remian(poly,SiN,spacer,metal and so on). Some connect more than two lines,it’s bridge(killer).
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➢12.Concave: COP（ Crystal oriented pits ）, Oxide Loss，Pits. ➢13.Peeling : Pattern shift or missing（W plug is one of peeling,always appear at wafer edge.）
>
Page: 11
Defect Sort
➢1.False : Found nothing after review with inspection data. ➢2.Unkown : Defects were found but there is no suitable defect code to assign. ➢3.Fall on particle : Particle on surface of patten.
Page: 8
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Stopping the Inspection
>
Page: 10
Defect Overview
Why monitor defects ?
➢ To improve production yields, defects need to be monitored and statistically analyzed at each stage of wafer production.
➢4.In film particle : Particle was contained in film, such as poly, HDP, metal and so on.
HDP
Poly
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Page: 12
➢5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :