HT4832-耳机功放-Datasheet_CN_V1.0
HT9032数据手册
HT9032C/HT9032DCalling Line Identification ReceiverBlock DiagramRev.1.411February 23,2009Features·Operating voltage:3.5V~5.5V ·Bell 202FSK and V.23demodulation ·Ring detection input and output ·Carrier detection output·Power down mode ·High input sensitivity·HT9032C:16-pin DIP/SOP packageHT9032D:8-pin DIP/SOP packageApplications·Feature phones ·Caller ID adjunct boxes ·Fax and answering machines·Computer telephony interface products ·ADSI productsGeneral DescriptionThe HT9032calling line identification receiver is a low power CMOS integrated circuit designed for receiving physical layer signals transmitted according to Bellcore TR-NWT-000030and ITU-T V.23specifications.The primary application of this device is for products used toreceive and display the calling number,or message waiting indicator sent to subscribers from the central of-fice facilities.The device also provides a carrier detec-tion circuit and a ring detection circuit for easier systemapplications.Pin AssignmentPin DescriptionPin Name I/O Description Power InputsVDD¾Power-VDD is the input power for the internal logic.VSS¾Ground-VSS is ground connection for the internal logic.PDWN I A logic²1²on this pin puts the chip in power down mode.When a logic²0²is on this pin,the chip in power up mode.This is a Schmitt trigger input.ClockX1I A crystal or ceramic resonator should be connected to this pin and X2. This pin may be driven from an external clock source.X2O A crystal or ceramic resonator should be connected to this pin and X1. Ring DetectionsRDET1I It detects ring energy on the line through an attenuating network and enables the oscillator and ring detection.This is a Schmitt trigger input.RDET2I It couples the ring signal to the precision ring detector through an attenuating network. RDET=²0²if a valid ring signal is detected.This is a Schmitt trigger input.RTIME I/O An RC network may be connected to this pin in order to hold the pin voltage below2.2V be-tween the peaks of the ringing signal.This pin controls internal power up and activates the par-tial circuitry needed to determine whether the incoming ring is valid or not.The input is a Schmitt trigger input.The output cell structure is an NMOS output.FSK Signal InputsTIP I This input pin is connected to the tip side of the twisted pair wires.It is internally biased to1/2 V DD when the device is in power up mode.This pin must be DC isolated from the line.RING I This input pin is connected to the ring side of the twisted pair wires.It is internally biased to1/2 V DD when the device is in power up mode.This pin must be DC isolated from the line.Detection ResultsRDET O This open drain output goes low when a valid ringing signal is detected.When connected to PDWN pin,this pin can be used for auto power up.CDET O This open drain output goes low indicating that a valid carrier is present on the line.A hyster-esis is built-in to allow for a momentary drop out of the carrier.When connected to PDWN pin, this pin can be used for auto power up.DOUT O This pin presents the output of the demodulator when chip in power up mode.This data stream includes the alternate²1²and²0²pattern,the marking,and the data.At all other times,this pin is held high.DOUTC O This output presents the output of the demodulator when chip in power up mode and when an internal validation sequence has been successfully passed.This data stream does not include the alternate²1²and²0²pattern.This pin is always held high.TEST O Output pin for testing purposes only.NC¾No connectionRev.1.412February23,2009Absolute Maximum RatingsVoltages are referenced to V SS,except where noted.Supply Voltage.........................................-0.5V to6.0V All Input Voltages.................................................25mW Operating Temperature Range...................0°C to70°C Storage Temperature Range................-40°C to150°CNote:These are stress ratings only.Stresses exceeding the range specified under²Absolute Maximum Ratings²may cause substantial damage to the device.Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-ity.D.C.Characteristics Crystal=3.58MHz,Ta=0~70°CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V DD ConditionsV DD Supply Voltage¾¾ 3.55 5.5V I DD1Supply Current5V PDWN=0(3.58MHz OSC on)¾ 3.25mAI DD2Supply Current5V PDWN=1and RTIME=0(3.58MHz OSC on and internalcircuits partially on)¾ 1.9 2.5mAI STBY Standby Current5V PDWN=1and RTIME=1(3.58MHz OSC off)¾¾1m A V IL Input Voltage Logic05V¾¾¾0.2V V DD V IH Input Voltage Logic15V¾0.8V¾¾V DD I OL Output Voltage Logic05V I OL=1.6mA¾¾0.1V V DD I OH Output Voltage Logic15V I OH=0.8mA0.9V¾¾V DD I IN Input Leakage Current,All Inputs5V¾-1¾1m AV T-Input Low Threshold Voltage5V RDET1,RTIME,PDWN 2.0 2.3 2.6VV T+Input High Threshold Voltage5V RDET1,RTIME,PDWN 2.5 2.75 3.0VV TRDET2Input Threshold Voltage5V RDET2 1.0 1.1 1.2VR IN Input DC Resistance5V TIP,RING¾500¾k WRev.1.413February23,2009A.C.Characteristics -FSK DetectionV SS =0V,Crystal=3.58MHz,Ta=0to 70°C,0dBm=0.7746Vrms @600W SymbolParameterTest ConditionsMin.Typ.Max.Unit V DD ConditionsInput Sensitivity:TIP,RING5V -40-45¾dBm S/NSignal to Noise Ratio 5V¾20¾dBBand Pass Filter 60Hz 550Hz 2700Hz 3300Hz5VFrequency ResponseRelative to 1700Hz @0dBm¾-64-4-3-34¾dBCarrier Detect Sensitivity5V ¾-48¾dBm t DOSC Oscillator Start Up Time5V ¾¾2¾ms t SUPD Power Up to FSK Signal Set Up Time 5V ¾15¾¾ms t DAQ Carrier Detect Acquisition Time 5V ¾¾14¾ms t DCHEnd of Data to Carrier Detect High5V¾8¾¾msRev.1.414February 23,2009Functional DescriptionThe HT9032is designed to be the physical layer de-modulator for products targeted for the caller ID market. The data signaling interface should conform to Bell202, which is described as follows:·Analog,phase coherent,frequency shift keying ·Logical1(Mark)=1200+/-12Hz·Logical0(Space)=2200+/-22Hz ·Transmission rate=1200bps·Data application=serial,binary,asynchronousThe interface should be arranged to allow simple data transmission from the terminating central office,to the CPE(Customer Premises Equipment),only when the CPE is in an on-hook state.The data will be transmitted in the silent period between the first and second power ring before a voice path is established.The transmission level from the terminating C.O.will be-13.5dBm+/-1.0. The worst case attenuation through the loop is expected to be-20dB.The receiver therefore,should have a sen-sitivity of approximately-34.5dBm to handle the worst case installations.The ITU-T V.23is also using the FSK signaling scheme to transmit data in the general switched telephone network.For mode2of the V.23,the modulation rate and characteristic frequencies are listed below:·Analog,phase coherent,frequency shift keying ·Logical1(Mark)=1300Hz ·Logical0(Space)=2100Hz·Transmission rate=1200bpsSince the band pass filter of the HT9032can pass the V.23signal,hence the HT9032also can demodulate the V.23signal.Ring detectionThe data will be transmitted in the silent period between the first and second power ring before a voice path is es-tablished.The HT9032should first detect a valid ring and then perform the FSK demodulation.The typical ring detection circuit of the HT9032is depicted below. The power ring signal is first rectified through a bridge circuit and then sent to a resistor network that attenu-ates the incoming power ring.The values of resistors and capacitor given in the figure have been chosen to provide a sufficient voltage at RDET1pin to turn on the Schmitt trigger input with approximately a40Vrms or greater power ring input from tip and ring.When V T+of the Schmitt is exceeded,the NMOS on the pin RTIME will be driven to saturation discharging capacitor on RTIME.This will initialize a partial power up,with only the portions of the part involved with the ring signal anal-ysis enabled,including RDET2pin.With RDET2pin en-abled,a portion of the power ring above1.2V is fed to the ring analysis circuit.Once the ring signal is qualified, the RDET pin will be sent low.Operation modeThere are three operation modes of the HT9032.They are power down mode,partial power up mode,and power up mode.The three modes are classified by the following conditions:Modes Conditions Current ConsumptionPower down PDWN=²1²and RTIME=²1²<1m APartial power up PDWN=²1²and RTIME=²0² 1.9mA typicallyPower up PDWN=²0² 3.2mA typicallyRev.1.415February23,2009Application CircuitsApplication circuit 1Application circuit 2Rev.1.416February 23,2009Normally,the PDWN pin and the RTIME pin control the operation mode of the HT9032.When both pins are HIGH,the HT9032is set at the power down mode,con-suming less than 1m A of supply current.When a valid power ring arrives,the RTIME pin will be driven below V T-and the portions of the part involved in the ring signal analysis are enabled.This is partial power up mode,consuming approximately 1.9mA typically.Once thePDWN pin is below V T-,the part will be fully powered up,and ready to receive FSK.During this mode,the device current will increase to approximately 3.2mA (typ).The state of the RTIME pin is now a ²don ¢t care ²as far as the part is concerned.After the FSK message has been re-ceived,the PDWN pin can be allowed to return to V DD and the part will return to the power down mode.Application circuit3¾power on resetApplication circuit4¾power on resetNote:reference C1=0.1m F R1=81k WRev.1.417February23,2009Package Information8-pin DIP(300mil)Outline DimensionsSymbolDimensions in milMin.Nom.Max.A355¾375B240¾260C125¾135D125¾145E16¾20F50¾70G¾100¾H295¾315I¾¾375Rev.1.418February23,200916-pin DIP (300mil)Outline Dimensions·MS-001d (see fig1)Symbol Dimensions in milMin.Nom.Max.A 780¾880B 240¾280C 115¾195D 115¾150E 14¾22F 45¾70G ¾100¾H 300¾325I¾¾430·MS-001d (see fig2)Symbol Dimensions in milMin.Nom.Max.A 735¾775B 240¾280C 115¾195D 115¾150E 14¾22F 45¾70G ¾100¾H 300¾325I¾¾430Rev.1.419February 23,2009Fig1.Full Lead PackagesFig2.1/2Lead Packages·MO-095a(see fig2)SymbolDimensions in milMin.Nom.Max.A745¾785B275¾295C120¾150D110¾150E14¾22F45¾60G¾100¾H300¾325I¾¾430Rev.1.4110February23,2009·MS-012SymbolDimensions in milMin.Nom.Max.A228¾244B150¾157C12¾20C¢188¾197D¾¾69E¾50¾F4¾10G16¾50H7¾10a0°¾8°Rev.1.4111February23,2009·MS-013SymbolDimensions in milMin.Nom.Max.A393¾419B256¾300C12¾20C¢398¾413D¾¾104E¾50¾F4¾12G16¾50H8¾13a0°¾8°Rev.1.4112February23,2009Product Tape and Reel SpecificationsReel DimensionsSOP8NSymbol Description Dimensions in mmA Reel Outer Diameter330.0±1.0B Reel Inner Diameter100.0±1.5C Spindle Hole Diameter13.0+0.5/-0.2D Key Slit Width 2.0±0.5T1Space Between Flange12.8+0.3/-0.2T2Reel Thickness18.2±0.2SOP16W(300mil)Symbol Description Dimensions in mmA Reel Outer Diameter330.0±1.0B Reel Inner Diameter100.0±1.5C Spindle Hole Diameter13.0+0.5/-0.2D Key Slit Width 2.0±0.5T1Space Between Flange16.8+0.3/-0.2T2Reel Thickness22.2±0.2Rev.1.4113February23,2009Carrier Tape DimensionsSOP8NSymbol Description Dimensions in mm W Carrier Tape Width12.0+0.3/-0.1P Cavity Pitch8.0±0.1E Perforation Position 1.75±0.1F Cavity to Perforation(Width Direction) 5.5±0.1D Perforation Diameter 1.55±0.1D1Cavity Hole Diameter 1.50+0.25/-0.00P0Perforation Pitch 4.0±0.1P1Cavity to Perforation(Length Direction) 2.0±0.1A0Cavity Length 6.4±0.1B0Cavity Width 5.2±0.1K0Cavity Depth 2.1±0.1t Carrier Tape Thickness0.30±0.05C Cover Tape Width9.3±0.1SOP16W(300mil)Symbol Description Dimensions in mm W Carrier Tape Width16.0±0.2P Cavity Pitch12.0±0.1E Perforation Position 1.75±0.10F Cavity to Perforation(Width Direction)7.5±0.1D Perforation Diameter 1.50+0.10/-0.00D1Cavity Hole Diameter 1.50+0.25/-0.00P0Perforation Pitch 4.0±0.1P1Cavity to Perforation(Length Direction) 2.0±0.1A0Cavity Length10.9±0.1B0Cavity Width10.8±0.1K0Cavity Depth 3.0±0.1t Carrier Tape Thickness0.30±0.05C Cover Tape Width13.3±0.1Rev.1.4114February23,2009Holtek Semiconductor Inc.(Headquarters)No.3,Creation Rd.II,Science Park,Hsinchu,TaiwanTel:886-3-563-1999Fax:886-3-563-1189Holtek Semiconductor Inc.(Taipei Sales Office)4F-2,No.3-2,YuanQu St.,Nankang Software Park,Taipei115,TaiwanTel:886-2-2655-7070Fax:886-2-2655-7373Fax:886-2-2655-7383(International sales hotline)Holtek Semiconductor Inc.(Shanghai Sales Office)G Room,3Floor,No.1Building,No.2016Yi-Shan Road,Minhang District,Shanghai,China201103Tel:86-21-5422-4590Fax:86-21-5422-4705Holtek Semiconductor Inc.(Shenzhen Sales Office)5F,Unit A,Productivity Building,Gaoxin M2nd,Middle Zone Of High-Tech Industrial Park,ShenZhen,China518057 Tel:86-755-8616-9908,86-755-8616-9308Fax:86-755-8616-9722Holtek Semiconductor Inc.(Beijing Sales Office)Suite1721,Jinyu Tower,A129West Xuan Wu Men Street,Xicheng District,Beijing,China100031Tel:86-10-6641-0030,86-10-6641-7751,86-10-6641-7752Fax:86-10-6641-0125Holtek Semiconductor Inc.(Chengdu Sales Office)709,Building3,Champagne Plaza,No.97Dongda Street,Chengdu,Sichuan,China610016Tel:86-28-6653-6590Fax:86-28-6653-6591Holtek Semiconductor(USA),Inc.(North America Sales Office)46729Fremont Blvd.,Fremont,CA94538,USATel:1-510-252-9880Fax:1-510-252-9885CopyrightÓ2009by HOLTEK SEMICONDUCTOR INC.The information appearing in this Data Sheet is believed to be accurate at the time of publication.However,Holtek as-sumes no responsibility arising from the use of the specifications described.The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification,nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise.Holtek¢s products are not authorized for use as critical components in life support devices or systems.Holtek reserves the right to alter its products without prior notification.For the most up-to-date information, please visit our web site at .Rev.1.4115February23,2009。
ON4832晶体管产品规格书
电极耗散功率：PC=400mW，特征频率：fT=9GHz；
采用 4 引脚（宽集电极引脚与双发射极引脚）的 SOT143B 和 SOT143R 表面贴塑封。
2. 封装形式和引脚定义：
型号(Model) 封装形式(Package) 本体激光标示(Marking)
引脚(Pin)1 引脚(Pin)2 引脚(Pin)3 引脚(Pin)4
符号 ICBO hFE fT Cre CC Ce
∣S21∣2
NF
GUM
ITO
VO
PL1
d2
测试条件
VCB=6V,IE=0
VCE=6V,IC=20mA IC=40mA VCE=8V, f=1MHz, Tamb=25℃ IC=iC=0,VCB=8V,f=1MHz
IE=ie=0,VCB=8V,f=1MHz
参数名称 集电极-基极击穿电压 集电极-发射极击穿电压 发射极-基极击穿电压 集电极电流 耗散功率 最高结温 储存温度
符号 BVCBO BVCEO BVEBO
IC PT TJ Tstg
额定值 20 15 2.5 120 400 150
-65～+150
单位 V V V mA mW ℃
℃
ON4832 SOT143B
WMG collector
base emitter emitter
ON4832/X SOT143B
WMM collector emitter
base emitter
ON4832/XR SOT143R
WMR collector emitter
base emitter
3. 极限参数（Tamb=25℃）：
主要应用于超高频微波、VHF、UHF 和 CATV 高频宽带低噪声放大器中，
MIC4832 低噪声 220Vp-p EL 驱动器说明书
MIC4832 Evaluation BoardLow Noise 220Vp-p EL DriverMLF and Micro LeadFrame are a registered trademark of Amkor Technology.General DescriptionThe MIC4832 is a low audible noise 220Vp-p electroluminescent lamp (EL) driver. Using advanced Bipolar, CMOS, DMOS (BCD) technology, the MIC4832 integrates a high voltage boost converter and an H-bridge driver for driving a large EL lamp. The MIC4832 can drive large panel displays for mobile phones, remote controls, MP3 players or automotive electronics where EL panels are used for backlighting.The MIC4832 offers design flexibility with adjustable lamp and boost converter frequencies, simply by applying external set resistors.Micrel’s new H-Bridge design reduces audible noise by creating smoother AC voltage across the EL panel. The smooth AC voltage waveform eliminates sudden changes in voltage, thus reducing the common cause of audible noise in EL drivers. RequirementsThe MIC4832 evaluation board requires an input power source that is able to deliver greater than 200mA at 1.8V.PrecautionsThe evaluation board does not have reverse polarity protection. Applying a negative voltage to the V IN terminal may damage the device.The MIC4832 evaluation board is tailored for a Li-Ion range input supply voltage. It should not exceed 5.5V on the input. The MIC4832 is a high voltage, low current device and should be handled with care to prevent a possible electrical buzz.Getting Started1. Connect an external supply to V IN . Applydesired input voltage to the V IN (J1) and ground terminal (J2) of the evaluation board, paying careful attention to polarity and supply voltage (1.8V ≤ V IN ≤ 5.5V). An ammeter may be placed between the input supply and the V IN terminal to the evaluation board. Ensure that the supply voltage is monitored at the V IN terminal. The ammeter and/or power lead resistance can reduce the voltage supplied to the input.2. Connect an EL panel . Connect the ELpanel to the VA (J4) and VB (J5) terminals. Note that polarity of the EL panel does not matter. 3. Enable/Disable the MIC4832 BoostRegulator . JP1 is the enable/disable jumper for the Boost Regulator portion of the MIC4832. Connecting JP1 to ground disables the boost regulator and connecting JP1 to V IN enables the boost regulator. A voltage signal may be applied to the center pin of JP1 to enable or disable the boost regulator. A low voltage signal (0V) will disable the boost regulator and a high voltage equal to V IN will enable the boost regulator. The enable voltage should rise and fall between high and low monotonically without interruptions. 4. Enable/Disable the MIC4832 H -Bridge .JP2 is the enable/disable jumper for the H-Bridge portion of the MIC4832. Connecting JP2 to ground disables the H-Bridge and connecting JP2 to V IN enables the H-Bridge. Disabling the H-Bridge does not disable the boost regulator. 5. Enable/Disable the EL panel . Both theBoost Regulator and the H-Bridge of the MIC4832 must be enabled in order for the EL panel to light up. For minimum shutdown current, both the Boost Regulator and the H-Bridge should be turned off. The EN jumper (JP3) connects the V IN to the inductor. This jumper may be used to enable or disable the EL panel on the evaluation board, without having to use JP1 and JP2 for evaluation purposes.Ordering InformationPart Number DescriptionMIC4832YMM EV 220Vpp MSOP Evaluation Board MIC4832YML EV 220Vpp MLF Evaluation BoardBoost Regulator Output VoltageThe boost regulator output voltage is set to 110V. The output peak-to-peak voltage across the EL panel is about 2 times the boost regulator output voltage (220Vp-p).EL Panel Size and Equivalent CircuitUsing laboratory data, it can be shown that the EL panel has an equivalent circuit equal to a series resistance (Rs) with a series capacitance (C) and a parallel resistance (Rp). For example, if an EL panel is 4in2, then the equivalent circuit is about 20nF of capacitance in series with 450Ω of resistance and 766kΩ of parallel resistance. Figure 1 and Table 1 shows close approximations of the equivalent circuit for different EL panel sizes.Figure 1. EL Panel Equivalent CircuitTable 1. EL Panel Equivalent Circuit Components Size (in2) 0.40 1.0 2.0 3.0 4.0 6.0 C(nF) 2 5 10 15 20 30 Rs (Ω) 4600 1800 900 600 450 300 Rp (MΩ) 7.66 3.05 1.53 1.02 0.7660.511Changing the Boost Regulator Frequency (f SW)The boost regulator switching frequency may be changed depending on the value of the R SW resistor. The R SW resistor on the evaluation board is equal to 332kΩ. The switching frequency may be calculated using the Rsw resistor by the following equation.()Ω=MR36(kHz)fSWSWLowering the switching frequency will deliver more power will be delivered to the EL panel by the boost regulator; however, the switching frequency of the boost regulator should not be low enough to create over-shoot at the SW pin or at the CS pin. Refer to Table 2 for recommended values.Changing the EL Lamp Frequency, f ELThe EL lamp frequency (H-Bridge frequency) may be changed depending on the value of the R EL resistor. The R EL resistor on the evaluation board is equal to 1.78MΩ. The EL lamp frequency may be calculated using the R EL resistor by the following equation.()()Ω=MR360HzfELELThe higher the EL lamp frequency, the brighter the EL panel; however, more brightness will require more input current, thus demand more input power. More power may be delivered to the EL lamp by increasing the input voltage or by lowering the switching frequency of the boost regulator. A table of recommended components for different EL panel sizes and EL lamp frequency is shown in Figure 2 and Table 2.Typical Application CircuitFigure 2. Typical Li-Ion Powered MIC4832 Circuit Table 2. Recommended R SW & R EL values for various panel sizesLamp Frequency(Hz) 100 200 300400 500 600 700 800 900Size (inch2) Capacitance(nF)Rel (MΩ) 2.82 1.69 1.1 0.8370.665 0.562 0.4710.4090.369Rsw (kΩ)240 252 273281 257 269 2810.4 2fsw (kHz) 150 143 132128 116 105 98Rsw (kΩ)257 295 3531 5fsw (kHz) 140 122 102Rsw (kΩ)300 3332 10fsw (kHz) 120 108Rsw (kΩ)3133 15fsw (kHz) 115Note: Table 2 applies to circuit shown in Figure 2.Figure 3. Evaluation Board SchematicBill of MaterialsNumber Manufacturer Description QtyItem PartC1 C1608X7R1A103K TDK 0.01µF Ceramic Capacitor, 10V, X7R, Size 0603 1C2 C1608X5R0J225K TDK 2.2µF Ceramic Capacitor, 6.3V, X5R, Size 0603 1C3 C2012C0G2E2272J TDK 0.0027µF Ceramic Capacitor, 250V, C0G, Size 0805 1L1 LPF2810BT-221M(B) ABCO 220µH, 110mA I SAT. 1 D1 BAS20-V-GS18 Vishay 200V/200mA Hi-Voltage Switching Diode 1R1 CRCW06033323FKEYE3 Vishay 332kΩ, 1%, 1/16W, Size 0603 1R2 CRCW06031784FKEYE3 Vishay 1.78MΩ, 1%, 1/16W, Size 0603 1R3, R4 CRCW06030R00FKEYE3 Vishay 0Ω, 1%, 1/16W, Size 0603 2U1 MIC4832 Micrel Low Noise 220Vp-p EL Driver 1Notes:1. TDK:2. ABCO:3. Vishay:4. Micrel, Inc.: Printed Circuit Board Layout (MSOP)MSOP TopMSOP BottomPrinted Circuit Board Layout (MLF®)MLF® TopMLF® Bottom。
HT4832-耳机功放-Datasheet_CN_V1.0资料
HT4832/ HT4831耳机放大器33mW免输出电容立体声耳机放大器⏹ 特点・无需大尺寸输出隔直电容以0V电位为参考输出；出色的低频表现；・静态电流：3.6mA (PVDD=3.6V, Output=floating) ・关断电流：0.1uA・单端或差分输入内置输入电阻减少外部元器件数量系统噪声性能优良・THD+N仅为：0.014% (3.6V, 32ohm, 20mW)・功率输出：33mW (PVDD=3.6V, R L=32Ω, THD+N=1%)・单电源供电：2.5V-5.5V・增益可选：-6/0/3/6 dB・保护功能:过热/欠压异常保护功能・无铅封装，QFN16 ⏹ 概述HT4832 / HT4831是一款无需输出隔直电容的立体声耳机放大器。
HT4832 / HT4831支持差分和单端的模拟信号输入，并具备4种增益设置。
HT4832 / HT4831在3.6V供电下，THD+N = 1%，32ohm负载时能提供33mW的输出。
其具有低至0.014%的THD+N。
HT4832 / HT4831能在2.5V-5.5V电源条件下工作，具有过热保护和欠压保护等功能。
HT4832 / HT4831的关断电流低至0.1μA。
⏹ 应用・蓝牙耳机・智能手机・音响・平板/笔记本电脑・CD/MP3・便携式游戏机⏹ 典型应用图OUTR+1uFINR+OUTR- INR- OUTR1uFSourceINL+ OUTLOUTL+ 1uFOUTL- INL-1uFHT4832/ENG0 HT4831 SGNDG1 PGNDPVDDHPVDD HPVSSCAP+ CAP-2.2uF 2.2uF2.2uF版权所有©2015,嘉兴禾润电子科技有限公司-1- 9/2015 – V1.0⏹ 引脚信息⏹ 引脚定义*1引脚号引脚I/O 功能HT4832 HT4831 名称1 1 INL- I 左声道反相输入端（差分-）2 2 INL+ I 左声道同相输入端（差分+）3 3 INR+ I 右声道同相输入端（差分+）4 4 INR- I 右声道反相输入端（差分-）5 7 OUTR O 右声道输出6 5 G0 I 增益设置7 6 G1 I 增益设置8 8 HPVSS P 电荷泵负电源9 10 CAP- P 电荷泵电容负端10 9 PGND P 地11 11 CAP+ P 电荷泵电容正端12 13 HPVDD P 电荷泵正电源13 16 EN I 芯片使能，低电平时芯片关断14 12 PVDD P 电源15 15 SGND I 信号地16 14 OUTL O 左声道输出注1 I: 输入端O: 输出端P: 电源/地⏹ 订购信息H T 4 8 3 X XX封装形式产品型号封装形式顶面标记工作温度范围包装和供货形式HT483XSQ QFN16 HT483X SQ -40℃～85℃UVWXYZ *2 （扩展工业级）注2：WXYZ/UVWXYZ 为内部生产跟踪随机编码。
MIC4832YML TR;MIC4832YMM;MIC4832YMM TR;中文规格书,Datasheet资料
MIC4832Low Noise 220V PP EL DriverMLF and Micro LeadFrame is a registered trademark of Amkor Technologies, Inc.Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • General DescriptionThe MIC4832 is a low noise 220V PP electroluminescent lamp (EL) driver. Using advanced Bipolar, CMOS, DMOS (BCD) technology, the MIC4832 integrates a high voltage boost converter and an H-bridge driver for driving a large EL lamp. The MIC4832 can drive large panel displays for mobile phones, multimedia players or automotive electronics where EL panels are used for backlighting. The MIC4832 offers design flexibility with adjustable lamp and boost converter frequencies, simply by applying external resistors. A new H-Bridge design reduces audible noise by creating smoother AC voltage across the EL panel.The MIC4832 is offered in MLF ® 3mm x 3mm and MSOP-8 lead-free and RoHS-compliant packaging with a -40°C to 85°C junction temperature range.Datasheets and support documentation can be found on Micrel’s web site at: .Features• 1.8V to 5.5V DC input voltage • 220Vpp output voltage capable• Low audible noise EL drive waveform• Supports EL panel sizes up to 3in 2 (19cm 2) • Low 45µA operating supply current• Small inductor size with low profile (220uH) • Tiny 8-pin 3mm x 3mm MLF ® package • Adjustable boost converter frequency • Adjustable EL lamp frequency • 10nA shutdown currentApplications• LCD panel backlight • Mobile Phones • PDAs • Pagers • Calculators • Multimedia Players • Remote controls • GPS Receivers___________________________________________________________________________________________________________Typical ApplicationLow Noise EL DriverOrdering InformationPart Number Junction Temp. Range Package Lead FinishMIC4832YML –40° to +85°C 8-Pin 3mm × 3mm MLF®RoHS Compliant / Pb-Free / Halogen Free* MIC4832YMM –40° to +85°C 8-Pin MSOP RoHS Compliant / Pb-Free Note*MLF® is a GREEN RoHS-compliant package. Lead finish is NiPdAu. Mold compound is Halogen Free.Pin Configuration8-Pin MSOP (MM) 8-Pin 3mm × 3mm MLF® (ML)Pin DescriptionPin Number Pin Name Pin Function1 VDD Supply (Input): 1.8V to 5.5V for internal circuitry.Switch Resistor (External Component): Set switch frequency of the internal2 RSWpower MOSFET by connecting an external resistor to VDD. Connecting theexternal resistor to GND disables the switch oscillator and shuts down thedevice.EL Resistor (External Component): Set EL frequency of the internal H-bridge3 RELdriver by connecting an external resistor to VDD. Connecting the externalresistor to GND disables the EL oscillator.4 GND Ground5 SW Switch Node (Input): Internal high-voltage power MOSFET drain.Regulated Boost Output (External Component): Connect to the output capacitor6 CSof the boost regulator and connect to the cathode of the diode.7 VB EL Output: Connect to one end of the EL lamp. Polarity is not important.8 VA EL Output: Connect to one end of the EL lamp. Polarity is not important.Absolute Maximum Ratings(1)Supply Voltage (V DD)......................................–0.5V to 6.0V Output Voltage (V CS).....................................–0.5V to 120V EL Lamp Terminals (V A, V B)...................................V CS + 3V Switch Voltage (Vsw).....................................-0.5V to 120V Frequency Control Voltage(V RSW, V REL)...................................–0.5V to (V DD+0.3V) Storage Temperature (T S).........................–65°C to +150°C ESD Rating(4)..................................................................2kV Operating Ratings(2)Supply Voltage (V DD)....................................+1.8V to +5.5V Lamp Drive Frequency (f EL).......................60Hz to 1000Hz Switching Frequency (f SW).........................65kHz to 250kHz Ambient Temperature (T A)..........................–40°C to +85°C Package Thermal Resistance(3)MSOP(θJA).....................................................206°C/W MLF®(θJA).........................................................63°C/WElectrical Characteristics(5)V IN = V DD = 3.0V, R SW = 338KΩ, R EL = 1.78MΩ. T A = 25°C unless otherwise specified. Bold values indicate –40°C ≤ T A≤ +85°CParameter Condition MinTypMaxUnits On-resistance I SW = 100mA 3.8 7 OhmCS Voltage Variation 91 105 119Enable Input Low Voltage(turn-off)V DD = 1.8V to 5.5V 0.5 VEnable Input High Voltage (turn-on) V DD = 1.8V to 5.5V VDD-0.5VShutdown current R SW Resistor = LOW; R EL Resistor = LOW; V DD = 5.5V 0.01 0.5μA Input supply current R SW Resistor = HIGH;R EL Resistor = HIGH;V CS = 110V; V A, V B OPEN45 75 μAInput current including inductor V IN = V DD = 3.2V; R SW = 338KΩ, R EL = 1.78MΩ;L=220µH; R OUT =10kΩ; Lamp = 2in224 mAV A – V B output drive frequency R EL = 1.78MΩ158 200 242 HzSwitching transistor frequency R SW = 338KΩ90 112 134 kHzSwitching transistor dutycycle90 % Notes:1. Exceeding the absolute maximum rating may damage the device.2. The device is not guaranteed to function outside its operating rating.3. The maximum allowable power dissipation of any T A (ambient temperature) is P D(max) = (T J(max) – T A) / θJA. Exceeding the maximum allowablepower dissipation will result in excessive die temperature.4. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5k in series with 100pF.5. Specification for packaged product only.Typical CharacteristicsFunctional DiagramFigure 1. MIC4832 Block DiagramFunctional DescriptionOverviewThe MIC4832 is a high-voltage EL driver with an AC output voltage of 220V peak-to-peak capable of driving EL lamps up to 3 in 2. Input supply current for the MIC4832 is typically 45µA reducing to 10nA in shutdown. The high voltage EL driver has two internal oscillators to control the switching MOSFET and the H-bridge driver. Both of the internal oscillators’ frequencies can be individually programmed through the external resistors to maximize the efficiency and the brightness of the EL lamp.RegulationReferring to Figure 1, initially power is applied to V DD . The internal feedback voltage is less than the reference voltage causing the internal comparator to go high which enables the switching MOSFET’s oscillator. When the switching MOSFET turns on, current flows through the inductor and flows into the switch. The switching MOSFET will typically turn on for 90% of the switching period. During the on-time, energy is stored in the inductor. When the switching MOSFET turns off, current flowing into the inductor forces the voltage across the inductor to reverse polarity. The voltage across the inductor rises until the external diode conducts and clamps the voltage at V OUT + V D1. The energy in the inductor is then discharged into the C OUT capacitor. The internal comparator continues to turn the switching MOSFET on and off until the internal feedback voltage is above the reference voltage. Once the internal feedback voltage is above the reference voltage, the internal comparator turns off the switching MOSFET’s oscillator.When the EL oscillator is enabled, V A and V B switch in opposite states to achieve a 220V peak-to-peak AC output signal. The external resistor that connects to the REL pin determines the EL frequency.V IN = 3.6V I IN = 17mA L = 220µH C OUT = 2.7nF LAMP = 2 in 2R SW = 300kR EL = 2.82MV A - V B (100V /d i v )V B (50V /d i v )V A (50V /d i v )Time (2ms/div)Figure 2. 100Hz Output Waveform Switching FrequencyThe switching frequency of the converter is controlled via an external resistor between R SW pin and V DD pin of the device. The switching frequency increases as the resistor value decreases. For resistor value selections, see the “Typical Characteristics: Switching Frequency vs. SW Resistor” or use the equation below. The switching frequency range is 65kHz to 250kHz, with an accuracy of ±20%. In general, the lower the switching frequency, the greater the input current is drawn to deliver more power to the output. However, the switching frequency should not be so low as to allow the voltage at the switch node or the CS pin to go beyond the absolute maximum voltage of those pins.()Ω=M R 36(kHz)f SW SWEL FrequencyThe EL lamp frequency is controlled via an external resistor connected between R EL pin and V DD pin of the device. The lamp frequency increases as the resistor value decreases. For resistor value selections, see the “Typical Characteristics: EL Frequency vs. EL Resistor” graph on page 4 or use the equation below. The EL lamp frequency range is 60Hz to 1000Hz, with an accuracy of ±20%.()()Ω=M R 360Hz f EL ELV IN = 3.6V I IN = 27mA L = 220µH C OUT = 2.7nF LAMP = 2 in 2R SW = 332kR EL = 1.78MV A - V B (100V /d i v )V B (50V /d i v )V A (50V /d i v )Time (2ms/div)Figure 3. 200Hz Output WaveformIn general, as the EL lamp frequency increases, the amount of current drawn from the battery will increase. The color of the EL lamp and the intensity are dependent upon its frequency.V IN = 3.6V I IN = 21mA L = 220µH C OUT = 2.7nF LAMP = 1 in 2R SW = 353kR EL = 1.1MV A - V B (100V /d i v )V B (50V /d i v )V A (50V /d i v )Time (2ms/div)Figure 4. 300Hz Output WaveformEnable FunctionThe MIC4832 is disabled by connecting the external resistor (Rsw) to GND. This turns off the switch oscillator of the boost converter. Connecting the external resistor (Rsw) to V DD enables the oscillator and turns on the device. The enable voltage should rise or fall monotonically without interruption.Application InformationInductorA 220µH Murata (LQH4C221K04) inductor is recommended for most applications. Generally, inductors with smaller values can handle more current. Lowering the inductance allows the boost regulator to draw more input current to deliver more energy every cycle. As a result, a lower value inductor may be used to drive larger panels or make the current panel brighter. However, caution is required as using a low value inductor with a low switching frequency may result in voltages exceeding the absolute maximum rating of the switch node and/or the CS pin. If the application uses a low input voltage (1.8 to 3V), a lower value inductor, such as 100µH, may be used in order to drive the EL lamp at max brightness without issue. DiodeThe diode must have a high reverse voltage (150V), since the output voltage at the CS pin can reach up to 130V. A fast switching diode with lower forward voltage and higher reverse voltage (150V), such as BAV20WS/BAS20W, can be used to enhance efficiency.Output CapacitorLow ESR capacitors should be used at the regulated boost output (CS pin) of the MIC4832 to minimize the switching output ripple voltage. The larger the output capacitance, the lower the output ripple at the CS pin. The reduced output ripple at the CS pin along with a low ESR capacitor improves the efficiency of the MIC4832 circuit. Selection of the capacitor value will depend upon the peak inductor current, inductor size, and the load. The MIC4832 is designed for use with an output capacitance as lowas 2.2nF. For minimum audible noise, the use of aC0G/NPO dielectric output capacitor is recommended. TDK and AVX offer C0G/NPO dielectric capacitors in capacitances up to 2.7nF at 200V to 250V rating in 0805 size. If output ripple is a concern a 0.01µF/200V X7R output capacitor is recommended.EL Lamp Terminals (VA, VB)An EL lamp is connected from VA to VB as the load. The high voltage alternated across VA and VB by the H-Bridge cycles generate luminance. The voltage at VA and VB should not exceed the voltageat V CS by more than 3V. This situation may become present when noisy enable signals such as those often generated by mechanical switches are appliedto the driver’s inputs. To prevent over voltage at VA and VB, 10kΩ resistors may be placed in series from VA to the EL panel and from VB to the EL panel. An alternative to the use of 10kΩ resistors is to apply a diode from the CS pin to VA and VB, where the cathode of the diode is on the CS side and the anode is on the VA and VB side, respectively.Application CircuitFigure 5: Typical Li-Ion Powered MIC4832 CircuitLamp Frequency(Hz) 100 200 300 400 500 600 700 800 900Size (inch2) Capacitance(nF)R EL (MΩ) 2.82 1.69 1.1 0.837 0.665 0.562 0.471 0.409 0.369R SW (kΩ)240 252 273 281 257 269 2810.4 2f SW (kHz) 150 143 132 128 116 105 98R SW (kΩ)257 295 3531 5f SW (kHz) 140 122 102R SW (kΩ)300 3332 10f SW (kHz) 120 108R SW (kΩ)3133 15f SW (kHz) 115Note: Table 1 applies to circuit shown in Figure 5.Table 1: Recommended R SW & R EL values for various panel sizesLayout RecommendationTopBottomPackage Information8-Pin MSOP (MM)8-Pin 3mm x 3mm MLF® (ML)分销商库存信息:MICRELMIC4832YML TR MIC4832YMM MIC4832YMM TR。
HT6872_功放IC资料规格书
・低静态电流 Input AC Grounded, Without Load 2.65mA (VDD=3.6V) 3.25mA (VDD=5.0V) 4.00mA (VDD=6.5V)
・低关断电流：＜1µA (Input AC Grounded, Without Load)
-1-
01/2015 – V1.02
HT6872
4.7W 防削顶 D 类音频功率放大器
引脚信息
1
CTRL
2
BYPASS
3
IN-
4
IN+
8
OUT-
7
GND
6
VDD
5
OUT+
IN+
AGND
IN-
1
VDD
BYPASS
CTRL
2
OUT+
PGND
OUT-
3
引脚定义*1
8引脚SOP 顶视图
A
B
C
9焊球WLCSP 底视图
版权所有©2015, 嘉兴禾润电子科技有限公司
-7-
01/2015 – V1.02
HT6872
4.7W 防削顶 D 类音频功率放大器
功能描述及应用信息
输入配置
HT6872 接受模拟差分或单端音频信号输入，产生 PWM 脉冲输出信号驱动扬声器。 对差分输入，通过隔直电容 CIN 和输入电阻 RIN 分别输入到 IN+和 IN-端。系统增益 Av=200 RIN ，输入 RC 高通滤波器的截止频率 fc 1 (2πRINCIN ) 。 对单端输入，则通过 CIN 耦合到 IN+端。IN-端必须通过输入电阻和电容（与 CIN、RIN 值相同）接地。增 益 Av 和截止频率 fc 与差分输入时相同。 注意系统前级电路的输出阻抗 ZOUT 应不超过 600Ω。
HT4863MTE
Jun. 2009 HT4863 Product Brief V2.0 2.2W 带立体声耳机输出模式的双声道音频功率放大器♦ 概述带立体声耳机输出模式的双声道音频功率放大器，用于多媒体监听器、电脑、便携式电视机、GPS、DPF(数码相框)、MP3/MP4/PMP、音响、DVD等通信和消费类电子产品；驱动4Ω～32Ω扬声器/耳机,系统简单、外围器件少，音质逼真，可媲美“国半”同类AB类音频功放产品，具有桥式和单端两种输出模式。
采用外部控制的低功耗关断模式，立体耳机放大模式，以及内部热敏关断保护机制，并利用电路的特性减小噪声（滴答声及爆裂声）和失真度，总谐波失真（THD+N）< 1.0%，封装形式有TSSOP-20/SOP-16/DIP-16。
HT4863MTE，接3Ω/4Ω负载2.5W （典型）/2.2W （典型）；HT4863M/HT4863N,接8Ω负载1.2W（典型）。
♦ 电特性指标（ 交流特性条件： 桥式输出模式、V DD = 5V， TA = 25℃，BTL mode：桥式模式、SE mode：单端模式 ）HT4863Symbol Parameter ConditionsMin Typical Max Units (Limits)T A 工作温度范围﹣40+ 85 ℃V DD 电源电压范围 2.0 5.5 V V IN 输入电压范围－0.3 V DD +0.3 V I DD 静态工作电流VIN=0V, Io=0A ，HP-IN=0VIN=0V, Io=0A ，HP-IN=47 510mAI SD 静态关断电流 SHUTDOWN 接 GND 0.7 2 uA V IHV IL 耳机使能输入高电平 耳机使能输入低电平40.8 VV IH V IL 关断输入高电平 关断输入低电平1.4 0.4 V TWU启动时间1uF bypass cap(C6) 170 ms THD+N=1%, f=1kHz HT4863MTE,R L = 4Ω HT4863MTE,R L = 8Ω2.2 1.5W W Po 输出功率THD ≦10 %，f = 1kHz HT4863MTE,R L = 3Ω HT4863MTE,R L = 4Ω HT4863MTE,R L = 8Ω3.2 2.7 2W W W THD+N 总谐波失真+噪声 20Hz<f<1kHz R L = 4Ω，Po = 2 W R L = 8Ω，Po =1W 0.3 0.1% %PSRR 电源抑制比 VDD＝5V，VRIPPLE＝200mVRMS， RL＝8Ω，CB＝1.0uF67 dBX TALK 通道隔离度 f =1kHz ，CB ＝1.0uF ， RL=8Ω 90 dB SNR信噪比 RL =8Ω，Po=1.1W98 dB♦典型应用图1 音频系统电路图♦管脚排布图2 、SOP16 和DIP 封装 图3 、TSSOP20 封装说明：HT4863M（SOP16 封装）， HT4863N（DIP 封装），HT4863MT（TSSOP20 封装）, HT4863MTE（TSSOP20 带散热片封装）♦封装外形信息图4 宽体TSSOP20 封装结构尺寸图图5 宽体SOP16 封装结构尺寸图图6 DIP16 封装结构尺寸图。
BK4832规格书V0.2
BK4832 对讲机射频功率放大器 1 概述BK4832 是一款单片集成的高增益、高效率 的射频功率放大器芯片。
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HT4832/ HT4831耳机放大器33mW免输出电容立体声耳机放大器⏹ 特点・无需大尺寸输出隔直电容以0V电位为参考输出；出色的低频表现；・静态电流：3.6mA (PVDD=3.6V, Output=floating) ・关断电流：0.1uA・单端或差分输入内置输入电阻减少外部元器件数量系统噪声性能优良・THD+N仅为：0.014% (3.6V, 32ohm, 20mW)・功率输出：33mW (PVDD=3.6V, R L=32Ω, THD+N=1%)・单电源供电：2.5V-5.5V・增益可选：-6/0/3/6 dB・保护功能:过热/欠压异常保护功能・无铅封装，QFN16 ⏹ 概述HT4832 / HT4831是一款无需输出隔直电容的立体声耳机放大器。
HT4832 / HT4831支持差分和单端的模拟信号输入，并具备4种增益设置。
HT4832 / HT4831在3.6V供电下，THD+N = 1%，32ohm负载时能提供33mW的输出。
其具有低至0.014%的THD+N。
HT4832 / HT4831能在2.5V-5.5V电源条件下工作，具有过热保护和欠压保护等功能。
HT4832 / HT4831的关断电流低至0.1μA。
⏹ 应用・蓝牙耳机・智能手机・音响・平板/笔记本电脑・CD/MP3・便携式游戏机⏹ 典型应用图OUTR+1uFINR+OUTR- INR- OUTR1uFSourceINL+ OUTLOUTL+ 1uFOUTL- INL-1uFHT4832/ENG0 HT4831 SGNDG1 PGNDPVDDHPVDD HPVSSCAP+ CAP-2.2uF 2.2uF2.2uF版权所有©2015,嘉兴禾润电子科技有限公司-1- 9/2015 – V1.0⏹ 引脚信息⏹ 引脚定义*1引脚号引脚I/O 功能HT4832 HT4831 名称1 1 INL- I 左声道反相输入端（差分-）2 2 INL+ I 左声道同相输入端（差分+）3 3 INR+ I 右声道同相输入端（差分+）4 4 INR- I 右声道反相输入端（差分-）5 7 OUTR O 右声道输出6 5 G0 I 增益设置7 6 G1 I 增益设置8 8 HPVSS P 电荷泵负电源9 10 CAP- P 电荷泵电容负端10 9 PGND P 地11 11 CAP+ P 电荷泵电容正端12 13 HPVDD P 电荷泵正电源13 16 EN I 芯片使能，低电平时芯片关断14 12 PVDD P 电源15 15 SGND I 信号地16 14 OUTL O 左声道输出注1 I: 输入端⏹ 订购信息H T 4 8 3 X XX封装形式产品型号封装形式顶面标记工作温度范围包装和供货形式HT483XSQ QFN16 HT483X SQ -40℃～85℃UVWXYZ *2 （扩展工业级）为内部生产跟踪随机编码。
⏹ 电气特性● 极限工作条件*3参数符号最小值最大值单位电源电压范围PVDD -0.3 6.0 V 耳机功放工作电压范围HPVDD -0.3 2.9 V 输入信号电压范围(IN+, IN-) V IN HPVSS－0.3 HPVDD＋0.3 V 输入信号电压范围(G0, G1, EN) V IN －0.3 HPVDD＋0.3 V 工作环境温度范围T A -40 85 ℃工作结温范围T J -40 150 ℃储存温度T STG -65 85 ℃压在可能超过PVDD的应用环境中使用，推荐使用一个外部二极管来保证该电压不会超过绝对最大额定值。
● 推荐工作条件参数符号条件最小值典型值最大值单位电源电压PVDD 2.5 3.6 5.5 V EN，G0，G1端高电平电压V IH 1.3EN，G0，G1端低电平电压V IL 0.6工作环境温度T a -40 85 ℃电气特性*4PVDD=3.6V, R L=16ohm, Av=0dB, C HPVDD=2.2μf, C HPVSS=2.2μf, C FLYING=2.2μF, C IN=1uF, Ta=25ºC, 除非特殊说明参数符号条件最小值典型值最大值单位R L=16Ω, PVDD =3.6V46输出功率Po R L=16Ω, PVDD =5.0V f=1kHz, 99mW R L=32Ω, PVDD =3.6V THD+N=1% 33R L=32Ω, PVDD =5.0V68P O=20mW R L=16Ω,0.02总谐波失真加噪声THD+N P O=10mW f=1kHz 0.02% P O=20mW R L=32Ω,0.014P O=10mW f=1kHz 0.02输出噪声V N f=20Hz~20kHz, A加权, Av=0dB 9 µV rms 信噪比SNR A加权, Av=0dB, Po=20mW 96 dB 通道隔离度CS f=1KHZ，Po=15mW 91.5 dB 电源抑制比PSRR f=2kHz,V PP=200mV -80.5 dB 失调电压V OS -0.5 0.5 mVPVDD =3.0V，No Load，EN= PVDD 2.8 mA 静态电流I DD PVDD =3.6V，No Load，EN= PVDD 3.6 mAPVDD =5.0V，No Load，EN= PVDD 4.8 mA 关断电流I EN EN=PGND 0.1 µAG0= 0V , G1=0V （-6dB）-6.26增益Av G0≤ 0.6V,G1=0V（0dB）-0.26dB G0=0V,G1≤ 0.6V（3dB） 2.59G0≥ 1.3V,G1≥ 1.3V（6dB） 5.56电荷泵频率f osc 1.2 MHz上电开启时间t ON 使能端上电开启时间 1.2 ms 电源端上电开启时间33 msPVDD电源的启动V UVLH 2.3 V 阈值PVDD电源的关断V UVLL 2 V 阈值典型特性曲线Condition: PVDD = 3.6V, f IN = 1kHz, Gain = 0dB, Load = 16ohm, C HPVDD=2.2μf, C HPVSS=2.2μf, C FLYING=2.2μF, C IN=1uF, Ta=25ºC, unless otherwise specified.⏹ 功能描述及应用信息● 增益控制HT4832 / HT4831具有四种增益选择，可通过G0、G1配置，具体如下表：表格1增益配置表G0 G1 系统增益L (≤0.6V) L (≤0.6V) -6dBH (≥1.3V) L (≤0.6V) 0dBL (≤0.9V) H (≥1.3V) 3dBH (≥1.3V) H (≥1.3V) 6dB● 输入配置HT4832 / HT4831 支持模拟差分或单端音频信号输入，进入芯片前需加入输入隔直电容。
输入隔直电容与芯片内部的输入电阻组成RC高通滤波器，其截止频率f c 1(2πR IN C IN ) 。
表格 2 输入电阻情况表G0 G1 R INL (≤0.6V) L (≤0.6V) 26.4kohmH (≥1.3V) L (≤0.6V) 19.8kohmL (≤0.6V) H (≥1.3V) 16.5kohmH (≥1.3V) H (≥1.3V) 13.2kohm前级电路Z OUT C IN1uFHT4832(31) 前级电路IN+C INZ OUTR ININ-1uFHT4832(31)IN-IN+ R IN图1(1) 差分输入;(2) 单端输入● 电荷泵HT4832 / HT4831 具有低噪声电荷泵，产生负电源提供给耳机功放。
HPVDD 和 HPVSS 的电容值应大于或等于CP+和CP-间的电容（C FLYING）。
这些电容应选取ESR尽量小的型号。
2.2uF为建议参数。
版权所有©2015,嘉兴禾润电子科技有限公司-7- 9/2015 – V1.0HT4832/ HT4831耳机放大器 封装外形尺寸(mm)符号最小最大A 0.700 0.900A1 0.000 0.050A3 0.203(REF)D 2.900 3.100E 2.900 3.100D1 1.600 1.800E1 1.600 1.800k 0.200MINb 0.180 0.300e 0.500TYPL 0.300 0.500HT4832/ HT4831耳机放大器IMPORTANT NOTICE注意Jiaxing Heroic Electronic Technology Co., Ltd (HT) reserves the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any products or services without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.嘉兴禾润电子科技有限公司（以下简称HT）保留对产品、服务、文档的任何修改、更正、提高、改善和其他改变，或停止提供任何产品和服务，并不提供任何通知的权利。
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