FCA35N60参数

FCA35N60 N-Channel MOSFET
FCA35N60
600V N-Channel MOSFET
Features
• 650V @ TJ = 150°C • Typ.RDS(on) = 0.079Ω • Ultra low gate charge ( Typ. Qg = 139nC ) • Low effective output capacitance ( Typ. Coss.eff = 340pF ) • 100% avalanche tested
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics
(TC = 25oC) - Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
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VGS = 0V, ID = 16A
-
VDS = 600V, VGS = 0V
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VDS = 480V, TC = 125oC
-
VGS = ±30V, VDS = 0V
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VGS = VDS, ID = 250µA
3.0
VGS = 10V, ID = 17.5A
-
VDS = 40V, ID = 17.5A
March 2009
SuperFETTM
Description
SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
100
VDS, Drain-Source Voltage [V]
Crss 600
Capacitances [pF]
Figure 2. Transfer Characteristics
200
100
ID, Drain Current[A]
∆BVDSS / ∆TJ
BVDS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
-
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 300V, ID = 35A RG = 4.7Ω
200
VGS = 15.0 V
100
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID, Drain Current[A]
RDS(ON) [Ω], Drain-Source On-Resistance
1
0.3 0.1
*Notes: 1. 250µs Pulse Test 2. TC = 25oC
25
50
75
100
125
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
50000
10000 Ciss
1000
*Note: 1. VGS = 0V
100 2. f = 1MHz
Coss
Ciss = Cgs + Cgd (Cds = shorted)
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.24
0.20
0.16
0.12
0.08
0.04 0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
-Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
V/ns W
W/oC oC oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
1
FCA35N60 Rev. A

FCA35N60 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
-
-
VDS = 25V, VGS = 0V f = 1MHz
-
-
VDS = 480V, VGS = 0V, f = 1.0MHz
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VDS = 0V to 480V, VGS = 0V
-
-
VDS = 480V, ID = 35A VGS = 10V
-
(Note 4)
-
Drain Open, F= 1MHZ
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
S
Ratings 600 ±30 35 22.2 105 1455 35 31.25 20 312.5 2.5
-55 to +150
300
Typ. -
0.24 -
Max. 0.4
42
Units V V A A mJ A mJ
250
ns
105
220
ns
73
155
ns
-
35
A
-
105
A
-
1.4
V
614
-
ns
16.3
-
µC
FCA35N60 Rev. A
2

FCA35N60 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Qg Qgs
Qgd
ESR
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge
500
100
IS, Reverse Drain Current [A]
150oC
25oC
10
*Notes:
1. VGS = 0V
1 0.2 0.4
Typ. Max. Units