BFG540晶体管产品规格书

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晶体管参数及代换大全

各频段发射管参数大全（2）Type:P.Out:Vcc:Frq:Gain:Prices: 2SC2290100 Watt14 Volt30 MHz(=MRF454)2SC231216 Watt12 Volt30 MHz12dB2SC278280 Watt12,5 Volt175 MHz6,8 dB2SC2879100 Watt12,5 Volt28 MHz13dB2N91850mA15 Volt600 MHz2N35532,5 Watt28 Volt175 MHz10 dB2N3866 1 Watt28 Volt400 MHz10dBABH71158535 Watt13,5 Volt108 MHz10dBBF964 (n-fet)30mA20 Volt200 MHzBF966 (n-fet)30mA20 Volt800 MHzBFG90a180mW15 Volt 5 GHzBFG91300mW12 Volt 6 GHzBFQ1369 Watt14 Volt 4 GHz12,5dB25.-EU BFQ342,7 Watt15 Volt 4 GHz16,3dB17.-EU BFQ684,5 Watt14 Volt 4 GHz13dBBFR943,5 Watt25 Volt3,5 GHz10dBBFW30220mW10 Volt800 MHz 3.-EU BGY22A2,9 Watt13,8 Volt380-512 MHzBGY3322 Watt12 Volt108 MHzBGY47H 3 Watt9,6 Volt400-470 MHzBGY88724 Volt40-860 MHz21,5 dBBLF147150 Watt28 Volt108 MHz14dBBLF147Second ChoiceBLF177150 Watt50 Volt108 MHz19dB70.-EU BLF177Second ChoiceBLF24415 Watt28 Volt175 MHz>13dBBLF244Second ChoiceBLF24530 Watt28 Volt175 MHz>13dB60.-EU BLF24680 Watt28 Volt108 MHz>16dBBLF246b60 Watt28 Volt175MHz>14dBBLF248300 Watt28 Volt225 MHz>10dBBLF278300 Watt50 Volt108 MHz>20dB135.-EU BLF34630 Watt28 Volt225 MHz16,5dBBLF346Second ChoiceBLF368300 Watt32 Volt225 MHz>12dBBLF368Second ChoiceBLF378250 Watt50 Volt225 MHz16dBBLF54310 Watt28 Volt500 MHz>12dBBLF543Second ChoiceBLF54420 Watt28 Volt500 MHz>11dBBLF548150 Watt28 Volt500 MHz10dBBLF548Second ChoiceBLF861150 Watt32 Volt860 MHz>13,5dBBLF861Second ChoiceBLF861a Second ChoiceBLF104770 Watt26 Volt 1 GHz>14dBBLF1047Second ChoiceBLF182065 Watt26 Volt2,4 GHz>11dBBLF1820-7065 Watt26 Volt2000 MHz>11dBBLF204530 Watt26 Volt2,4 GHz>10dBBLF2045Second ChoiceBLF204765 Watt26 Volt2200 MHz>10dBBLF2047L65 Watt26 Volt2000 MHz>10,5dBBLF205760 Watt26 Volt2,4 GHzBLU20/1220 Watt12,5 Volt470 MHz>6,5dBBLU30/1230 Watt12,5 Volt470 MHz>6dBBLU45/1245 Watt12,5 Volt470 MHz>4,8dB(=MRF646)BLU53 (dual)100 Watt28 Volt400 MHzBLU60/1260 Watt12,5 Volt470 MHz>4,4dBBLU60/2860 Watt28 Volt460 MHz>4,5dBBLU99 5 Watt12,5 Volt470 MHz>10,5dBBLV1115 Watt13,5 Volt175 MHz>8dBBLV2115 Watt28 Volt175 MHz>10dBBLV25175 Watt28 Volt108 MHz>10dBBLV30 2 Watt28 Volt860 MHz10dB25.-EU BLV32F10 Watt25 Volt224 MHz>16dBBLV3390 Watt28 Volt224 MHz7,5dB200.-EU BLV36100 Watt28 Volt225 MHz11dB100.-EU BLV5930 Watt25 Volt860 MHz>7dBBLV62150 Watt26 Volt860 MHz11dbBLV80/2880 Watt28 Volt175 MHz>6,5dBBLV92 4 Watt12,5 Volt900 MHz>7,5dBBLV938 Watt12,5 Volt900 MHz>6,5dBBLV9730 Watt24 Volt960 MHz>7dBBLV102BLV19312 Watt12,5 Volt900 MHz>6,5dBBLV861100 Watt28 Volt860 MHz>8,5dBBLV862150 Watt28 Volt860 MHz>8dBBLV862Second ChoiceBLV91010 Watt26 Volt960 MHz>11dBBLV950150 Watt26 Volt900 MHz>8dBBLV204760 Watt26 Volt2,4 GHz>9dBBLW3030 Watt12,5 Volt175 MHz>10dBBLW3128 Watt12,5 Volt175 MHz>10dBBLW320,5 Watt25 Volt860 MHz>11dB50.-EU BLW33 1 Watt25 Volt860 MHz>10dB Ask BLW33Second ChoiceBLW34 2 Watt25 Volt860 MHz10dB80.-EU BLW5050 Watt50 Volt30 MHz>19,5dBBLW7680 Watt28 Volt108 MHz7,9dBBLW77130 Watt28 Volt87,5 MHz7,5dBBLW78100 Watt28 Volt150 MHz>6dBBLW8110 Watt12,5 Volt470 MHz>6dB25 Watt12,5 Volt470 MHz6,2dBBLW82(=MRF644)BLW82F30 Watt36 Volt470 MHzBLW8645 Watt28 Volt175 MHz7,5dBBLW89 2 Watt28 Volt470 MHz>12dBBLW90 4 Watt28 Volt470 MHz>11dBBLW95160 Watt50 Volt30 MHz>14dBBLW96200 Watt50 Volt108 MHz6,5dBBLW96Second ChoiceBLW984,4 Watt25 Volt860 MHz7dB ASK BLW98Second Choice175 Watt50 Volt108 MHz7,4dBBLX15(=ON616)BLX15Second ChoiceBLY8312 Watt175 MHzBLY878 Watt13,5 Volt175 MHz>12dBBLY8815 Watt13,5 Volt175 MHz>8dBBLY8925 Watt13,5 Volt175 MHz>6dBBLY9050 Watt13,5 Volt175 MHz>5dBBLY918 Watt28 Volt175 MHz>12dBBLY9450 Watt28 Volt175 MHz>7dBMHW720-320 Watt12,5 Volt512 MHz21dBMRF151G300 Watt50 Volt175 MHz16 dB140.-EU MRF237 4 Watt12,5 Volt175 MHz12dBMRF24580 Watt12,5 Volt175 MHz6,4dBMRF24775 Watt12,5 Volt175MHz7dBMRF450A50 Watt13,6 Volt30 MHz11dBMRF45480 Watt12,5 Volt30 MHz12dBMRF45560 Watt12,5 Volt30 MHz13dBMRF47512 Watt13,6 Volt30 MHz10dBMRF47740 Watt12,5 Volt30 MHz15dBSD1460150 Watt28 Volt108 MHz9,2dB90.-EUHF-TransistorType:P.Out:Vcc:Frq:Gain:Prices: 2SC2290100 Watt14 Volt30 MHz(=MRF454)2SC231216 Watt12 Volt30 MHz12dB2SC278280 Watt12,5 Volt175 MHz6,8 dB2SC2879100 Watt12,5 Volt28 MHz13dB2N91850mA15 Volt600 MHz2N35532,5 Watt28 Volt175 MHz10 dB2N3866 1 Watt28 Volt400 MHz10dBABH71158535 Watt13,5 Volt108 MHz10dBBF964 (n-fet)30mA20 Volt200 MHzBF966 (n-fet)30mA20 Volt800 MHzBFG90a180mW15 Volt 5 GHzBFG91300mW12 Volt 6 GHzBFQ1369 Watt14 Volt 4 GHz12,5dB25.-EU BFQ342,7 Watt15 Volt 4 GHz16,3dB17.-EU BFQ684,5 Watt14 Volt 4 GHz13dBBFR943,5 Watt25 Volt3,5 GHz10dBBFW30220mW10 Volt800 MHz 3.-EU BGY22A2,9 Watt13,8 Volt380-512 MHzBGY3322 Watt12 Volt108 MHzBGY47H 3 Watt9,6 Volt400-470 MHzBGY88724 Volt40-860 MHz21,5 dBBLF147150 Watt28 Volt108 MHz14dBBLF147Second ChoiceBLF177150 Watt50 Volt108 MHz19dB70.-EU BLF177Second ChoiceBLF24415 Watt28 Volt175 MHz>13dBBLF244Second ChoiceBLF24530 Watt28 Volt175 MHz>13dB60.-EU BLF24680 Watt28 Volt108 MHz>16dBBLF246b60 Watt28 Volt175MHz>14dBBLF248300 Watt28 Volt225 MHz>10dBBLF278300 Watt50 Volt108 MHz>20dB135.-EU BLF34630 Watt28 Volt225 MHz16,5dBBLF346Second ChoiceBLF368300 Watt32 Volt225 MHz>12dBBLF368Second ChoiceBLF378250 Watt50 Volt225 MHz16dBBLF54310 Watt28 Volt500 MHz>12dBBLF543Second ChoiceBLF54420 Watt28 Volt500 MHz>11dBBLF548150 Watt28 Volt500 MHz10dBBLF548Second ChoiceBLF861150 Watt32 Volt860 MHz>13,5dBBLF861Second ChoiceBLF861a Second ChoiceBLF104770 Watt26 Volt 1 GHz>14dBBLF1047Second ChoiceBLF182065 Watt26 Volt2,4 GHz>11dBBLF1820-7065 Watt26 Volt2000 MHz>11dBBLF204530 Watt26 Volt2,4 GHz>10dBBLF2045Second ChoiceBLF204765 Watt26 Volt2200 MHz>10dBBLF2047L65 Watt26 Volt2000 MHz>10,5dBBLF205760 Watt26 Volt2,4 GHzBLU20/1220 Watt12,5 Volt470 MHz>6,5dBBLU30/1230 Watt12,5 Volt470 MHz>6dBBLU45/1245 Watt12,5 Volt470 MHz>4,8dB(=MRF646)BLU53 (dual)100 Watt28 Volt400 MHzBLU60/1260 Watt12,5 Volt470 MHz>4,4dBBLU60/2860 Watt28 Volt460 MHz>4,5dBBLU99 5 Watt12,5 Volt470 MHz>10,5dBBLV1115 Watt13,5 Volt175 MHz>8dBBLV2115 Watt28 Volt175 MHz>10dBBLV25175 Watt28 Volt108 MHz>10dBBLV30 2 Watt28 Volt860 MHz10dB25.-EU BLV32F10 Watt25 Volt224 MHz>16dBBLV3390 Watt28 Volt224 MHz7,5dB200.-EU BLV36100 Watt28 Volt225 MHz11dB100.-EU BLV5930 Watt25 Volt860 MHz>7dBBLV62150 Watt26 Volt860 MHz11dbBLV80/2880 Watt28 Volt175 MHz>6,5dBBLV92 4 Watt12,5 Volt900 MHz>7,5dBBLV938 Watt12,5 Volt900 MHz>6,5dBBLV9730 Watt24 Volt960 MHz>7dBBLV102BLV19312 Watt12,5 Volt900 MHz>6,5dBBLV861100 Watt28 Volt860 MHz>8,5dBBLV862150 Watt28 Volt860 MHz>8dBBLV862Second ChoiceBLV91010 Watt26 Volt960 MHz>11dBBLV950150 Watt26 Volt900 MHz>8dBBLV204760 Watt26 Volt2,4 GHz>9dBBLW3030 Watt12,5 Volt175 MHz>10dBBLW3128 Watt12,5 Volt175 MHz>10dBBLW320,5 Watt25 Volt860 MHz>11dB50.-EU BLW33 1 Watt25 Volt860 MHz>10dB Ask BLW33Second ChoiceBLW34 2 Watt25 Volt860 MHz10dB80.-EU BLW5050 Watt50 Volt30 MHz>19,5dBBLW7680 Watt28 Volt108 MHz7,9dBBLW77130 Watt28 Volt87,5 MHz7,5dBBLW78100 Watt28 Volt150 MHz>6dBBLW8110 Watt12,5 Volt470 MHz>6dBBLW8225 Watt12,5 Volt470 MHz6,2dB(=MRF644)BLW82F30 Watt36 Volt470 MHzBLW8645 Watt28 Volt175 MHz7,5dBBLW89 2 Watt28 Volt470 MHz>12dBBLW90 4 Watt28 Volt470 MHz>11dBBLW95160 Watt50 Volt30 MHz>14dBBLW96200 Watt50 Volt108 MHz6,5dBBLW96Second ChoiceBLW984,4 Watt25 Volt860 MHz7dB ASK BLW98Second Choice175 Watt50 Volt108 MHz7,4dBBLX15(=ON616)BLX15Second ChoiceBLY8312 Watt175 MHzBLY878 Watt13,5 Volt175 MHz>12dBBLY8815 Watt13,5 Volt175 MHz>8dBBLY8925 Watt13,5 Volt175 MHz>6dBBLY9050 Watt13,5 Volt175 MHz>5dBBLY918 Watt28 Volt175 MHz>12dBBLY9450 Watt28 Volt175 MHz>7dBMHW720-320 Watt12,5 Volt512 MHz21dBMRF151G300 Watt50 Volt175 MHz16 dB140.-EU MRF237 4 Watt12,5 Volt175 MHz12dBMRF24580 Watt12,5 Volt175 MHz6,4dBMRF24775 Watt12,5 Volt175MHz7dBMRF450A50 Watt13,6 Volt30 MHz11dBMRF45480 Watt12,5 Volt30 MHz12dBMRF45560 Watt12,5 Volt30 MHz13dBMRF47512 Watt13,6 Volt30 MHz10dBMRF47740 Watt12,5 Volt30 MHz15dBSD1460150 Watt28 Volt108 MHz9,2dB90.-EU。

MRF系列产品介绍

MRF 系列产品介绍（仅其中一部分）型号功能MRF581 5G 0.6WMRF181 800-1G 10WMRF182 1G 30WMRF281 800-2.6G 4WMRF282 2.6G 20WMRF284 800-2.6G 30W 带螺丝座MRF20060 1.7-2.6G 60WMRF9045 9G 45WMRF5003 520M 15WMRF5007 520M 15WMRF1517 520M 15WMRF1507 520M 15WMRF1511 175M 15WMRF1518 175M 15WMRF553 175M 1.5W33P50 520M 1W2SK2595 1G 10WMRF10005960-1215 MHz, 5.0 W, 28 V 微波功率晶体管MRF10031960-1215 MHz, 30 W (Peak), 36 V 微波功率晶体管MRF10120960-1215 MHz,W (Peak), 36 V 微波功率晶体管120MRF101501025-1150 MHz, 150 W (Peak), 50 V 微波功率晶体管MRF103501025-1150 MHz, 350 W (Peak), 50 V 微波功率晶体管MRF105021025-1150 MHz, 500 W (Peak), 50 V 微波功率晶体管MRF134达到400 MHz, 5.0 W, 28 V N 宽带射频功率MOSFETMRF136达到400 MHz, 15 W, 28 V N 宽带射频功率MOSFETMRF141175 MHz, 150 W, 28 V N 宽带射频功率 MOSFETMRF141GMRF148A30 W, 50 V N 宽带射频功率 MOSFETMRF150达到 150 MHz, 150 W, 50 V N 宽带射频功率 MOSFETMRF151175 MHz, 150 W, 50 V N 宽带射频功率 MOSFET MRF151G175 MHz, 300 W, 50 V N 宽带射频功率 MOSFET MRF15480 MHz, 600 W, 50 V N 宽带射频功率 MOSFETMRF157达到 80 MHz, 600 W, 50 V N 宽带射频功率 MOSFETMRF158达到 500 MHz, 2.0 W, 28 V TMOS N 宽带射频功率 FETMRF160500 MHz, 4.0 W, 28 V N 宽带射频功率 MOSFET MRF160061.6 GHz, 6.0 W, 28 V 射频功率晶体管 MRF160301.6 GHz, 30 W, 28 V RF 射频功率晶体管MRF166C500 MHz, 20 W, 28 V N 宽带射频功率 MOSFET MRF166W500 MHz, 40 W, 28 V TMOS N 宽带射频功率 FET MRF171A150 MHz, 45 W, 28 V N 宽带射频功率 MOSFET175 MHz, 300W, 28 V N 宽带射频功率 MOSFET达到 175 MHz,MRF173175 MHz, 80 W, 28 V N 宽带射频功率MOSFETMRF174200 MHz, 125 W, 28 V N 宽带射频功率MOSFETMRF177400 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF275G100 -500 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF275L500 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF42630 MHz, 25 W, 28 V 射频功率晶体管NPN SiMRF587500 MHz, 15 V, NF = 3.0 dB, 高频晶体管MRFIC1818 1.7-1.9G 2WMRF183 1G 45WMRF187 800-960MHz 85WMRF7042 900MHz 45WMRF175 400MHz 200WMRF581 5G 0.6W2SK2596 800-960MHz 1.5WBFG10 25G 0.6VBFG21 18G 4.5V 0.5A 0.6WBFG403 17G 4.5V 16MA 0.3WBFG410 22G 4.5V 12MA 135MWBFG425 25G 4.5V 30MA 135MWBFG450 45G 0.2WBFG540 45G 3V 30MA 35MWBFG541 9G 0.6WBLT81 800-960M 1.2WTP3022 800-960M 15WTDA1576 ICSRF7062 800-960M 150WMHL9236 800-960M 3WMHL7008 800-960M 3WMHL9128 800-960M 3WATF10136 4G 0.4WCMM2308 800-2.7G 1WCMM1330 1.7-1.9G 2WPF0030 860-915M 7W终端负载50 欧5W 3G,18G 驻波小于 1.06高频电阻50 欧100 欧30W 100W 3G型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRF281 800-2.6G 4W 4K 10 BFG10 25G 0.6W 10K 1MRF282 800-2.6G 10W 4K 15 BFG21 18G 4.5V 0.5A 0.6W 5K 1MRF284 800-2.6G 30W 带螺丝座4K 20 BFG403 17G 4.5V 16MA 0.3W 5K0.5MRF20060 1.7-2.6G 60W 6K 30 BFG410 22G 4.5V 12MA 135MW 5K 0.5MRF181 800-960M 10W 2K 10 BFG425 25G 4.5V 30MA 135MW 4K 0.5 MRF182 1G 30W 500PC 15 BFG450 45G 0.2W 1K 31.7-1.9G 2W 2K 10 BFG540 45G 3V 30MA 135MW 2K 3MRFIC1818MRF187 800-960M 85W 1K 30 BFG541 9G 0.6W 3K 0.5MRF7042 900M 45W 2K 15 BFG198 9G 1W 3K 0.5MRF9045 9G 45W 200PC 30 TP3022 800-960M 15W 4K 6MRF581 5G 0.6W 5K 0.5 TDA1576 IC 2K 2MRF5003 520M 15W 5K 3 SRF7062 800-960M 150W 2K 40MRF5007 520M 15W 5K 5 MHL9236 800-960M 3W 200PC 20MRF1517 520M 15W 2K 5 MHL7008 800-960M 3W 500PC 15MRF1507 520M 15W 2K 5 MHL9128 800-960M 3W 500PC 15MRF1511 175M 15W 2K 5 ATF10136 4G 0.4W 10K 1.5MRF1518 175M 15W 1K 5 CMM2308 800-2.7G 1W 10K 1.5MRF553 175M 1.5W 6K 0.5 CMM1330 1.7-1.9G 2W 5K 2MRF137 225MHz 30W 100PC 20 RF2125 1.5-2.2G 1W 1K 5MRF141 225MHZ 150W 100PC 40 PF0030 860-915M 7W 2K 2MRF151G 175MHz 300W 500PC 100 2SC1971 175MHz 7W 5KMRF154 150MHz 600W 500PC 200 2SC3356 6.5G 0.2W 5K 0.1MRF175G 500MHz 150W 500PC 100 2SC3357 6.5G 2W 5K 0.2MRF6404 1.8-2G 1K 10 2SC2407 500MHz 0.6W 10K 0.2BLT50 500M 1.2W 5K 0.6 2SC1906 1G 150MW 10K 0.05BLT81 400-960M 1.2W 3K 1 BLU98 5G 0.7W 5K 0.52SK2596 800-960M 1.5W 5K 0.5 33P55 800-960MHz 60W 5K 102SK2595 800-960M 10W 10K 3 E626 800-960Mhz 60W 5K 103SK228 1G 高放双栅管5K 0.15 终端负载50 欧5W 3G,18G 驻波小于 1.06 3K 10,100温补晶体12.8MHZ 贴片7x7M 5k 3 高频电阻50 欧100 欧30W 100W 3G 10kMRF9282 2A 7W 手持对讲机/ 长距离无绳电话/ 车载台/ 手机专用功率发射晶体管集成电路ICMC3361 10K 0.1 HT9200 5K 0.2MC33110 5K 0.2 HT9170 5K 0.2MC34119 5K 0.1 93C66 5K 0.1LM386 5K 0.1 24C08 5K 0.2M54958 5K 1.5 EM92547 5K 0.2M64082 5K 0.5 KA4588 5K 0.1TB31202 5K 0.4 KA567 5K 0.1手机功放及常用元件型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRFIC0913 800-1000MHZ 2W 现货面议AP109 900MHZ 2W 现货面议27E31 900MHZ 2W 现货面议AP119 1800MHZ 2W 现货面议08K38 900MHZ 2W 现货面议4370451 900MHZ 2W 现货面议08K40 900MHZ 2W 现货面议4370453 1800MHZ 2W 现货面议08K07 900MHZ 2W 现货面议TRF6053 900MHZ 2W 现货面议08K11 900MHZ 2W 现货面议TRF2253 频率合成IC 现货面议PF01420B 900MHZ 2W 现货面议13MHZ 温补晶体现货面议PF01412A 1800MHZ 2W 现货面议881-942 声表滤波器现货面议PF01411B 900MHZ 2W 现货面议PF014110B 1800MHZ 2W 现货面议常用元件MRF5711 8G 0.33W 现货面议BFQ67 8G 0.3W 现货面议MRF5811 5G 0.7W 现货面议BFG540 9G 0.4W 现货面议MMBR941 8G 0.25W 现货面议BFR182W 8G 0.3W 现货面议MMBR5031G 0.3W 现货面议BFR91 6G 0.3W 现货面议MMBR901 4G 0.3W 现货面议BU508 现货面议84UD22182EB-9C 现货面议Y759B 现货面议F741529AGHH 现货面议08122B 现货面议TWL3011GGM 现货面议089711747 现货面议LMST 现货面议LS28 现货面议。

BFG35中文资料

2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz.
CONDITIONS open emitter open base open collector
up to Ts = 135 °C (note 1)
Note 1. Ts is the temperature at the soldering point of the collector tab.
MIN.
C1 L1 input 75 Ω
R1 L2
L6 C4 R2
L3 DUT
VCC C5 L5
C6 L4
output 75 Ω
C7
C2
R3 R4
MBB284
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
VALUE 10 nF 1 pF 10 nF 75 Ω
75 Ω
75 Ω
5 µH ≈25 nH 10 kΩ 200 Ω 27 Ω
DIMENSIONS
length 7mm; width 2.5 mm length 22mm; width 2.5 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm

BFG540晶体管产品规格书

IC=40mA,VCE=8V,zs=zL=75Ω ,f=900MHz, Tamb=25℃
VO=275mV,IC=40mA,VCE=8 V,RL=50Ω,fp=250MHz, fq=560MHz,Tamb=25℃
最小值 60 15 -
-
-
-
-
典型值 -
120 9 0.5 0.9 2.0 16 1.3 1.9 2.1 18 11
BFG540 NPN 微波低噪声晶体管
北京鼎霖电子科技
BFG540 NPN TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
1. 简述：
Lead-free
Top view
4
3
本芯片采用硅外延工艺制造，具有高功率增益、低噪声系数、较宽的转换频率、低漏电流、金材质引出结构，具有较高的可靠性；
符号 ICBO hFE fT Cre CC Ce
∣S21∣2
NF
GUM
ITO
VO
PL1
d2
测试条件
VCB=6V,IE=0
VCE=6V,IC=20mA IC=40mA VCE=8V, f=1MHz, Tamb=25℃ IC=iC=0,VCB=8V,f=1MHz
IE=ie=0,VCB=8V,f=1MHz
34
500
21
-50
最大值 0.05 250
1.8 2.4 -
-
-
-
-
单位 μA
GHz pF pF pF dB dB dB dB dB dB
dBm
mV
dBm
dB

5.典型特征曲线：

IRF540中文资料_数据手册_参数

Ciss
1500
1000 500 0 1
Coss
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD - 94812
IRF540NPbF
HEXFET® Power MOSFET
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
1A)
TJ = 25°C 100

lnfineon BFP540 说明书

NPN Silicon RF Transistor• For highest gain low noise amplifier at 1.8 GHz• Outstanding G ms = 21 dBNoise Figure F = 0.9 dB• Gold metallization for high reliability • SIEGET45 - LineVPS05605 4213ESD: E lectro s tatic d ischarge sensitive device, observe handling precaution!Type Marking Pin Configuration Package BFP540ATs1=B2=E3=C4=E--SOT343 Maximum RatingsParameter Symbol Value Unit Collector-emitter voltage V CEO 4.5V Collector-emitter voltage V CES14Collector-base voltage V CBO14Emitter-base voltage V EBO1Collector current I C80mA Base current I B8Total power dissipation1)T S≤ 77°CP tot250mW Junction temperature T j150°C Ambient temperature T A-65 (150)Storage temperature T stg-65 (150)Thermal ResistanceParameter Symbol Value Unit Junction - soldering point2)R thJS≤ 290K/W1TS is measured on the collector lead at the soldering point to the pcb2For calculation of RthJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.DC CharacteristicsCollector-emitter breakdown voltageV(BR)CEO 4.55-VI C = 1 mA, I B = 0I CES--10µA Collector-emitter cutoff currentV CE = 14 V, V BE = 0Collector-base cutoff currentI CBO--100nA V CB = 5 V, I E = 0Emitter-base cutoff currentI EBO--10µA V EB = 0.5 V, I C = 0DC current gainh FE50110200-I C = 20 mA, V CE = 3.5 VElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameterSymbol Values Unitmin.typ.max.AC Characteristics (verified by random sampling)Transition frequency I C = 50 mA, V CE = 4 V, f = 1 GHz f T 2130-GHz Collector-base capacitance V CB = 2 V, f = 1 MHz C cb -0.140.24pFCollector emitter capacitance V CE = 2 V, f = 1 MHz C ce -0.33-Emitter-base capacitance V EB = 0.5 V, f = 1 MHz C eb -0.65-Noise figureI C = 5 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z Sopt I C = 5 mA, V CE = 2 V, f = 3 GHz, Z S = Z Sopt F--0.91.3 1.4-dBPower gain, maximum stable 1) I C = 20 mA, V CE = 2 V, Z S = Z Sopt , Z L = Z Lopt , f = 1.8 GHzG ms-21.5-dBPower gain, maximum available 1) I C = 20 mA, V CE = 2 V, Z S = Z Sopt , Z L = Z Lopt , f = 3 GHz G ma-16-dBTransducer gainI C = 20 mA, V CE = 2 V, Z S = Z L = 50 Ω, f = 1.8 GHzI C = 20 mA, V CE = 2 V, Z S = Z L = 50 Ω, f = 3 GHz|S 21e |216 -18.5 14.5 - -dBThird order intercept point at output 2) V CE = 2 V, I C = 20 mA, f = 1.8 GHz, Z S = Z L = 50 ΩIP 3-24.5-dBm1dB Compression point at output I C = 20 mA, V CE = 2 V, Z S = Z L = 50 Ω, f = 1.8 GHzP -1dB-11-1G ma = |S 21e / S 12e | (k-(k²-1)1/2), G ms = |S 21e / S 12e |2IP3 value depends on termination of all intermodulation frequency components.Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHzSPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data:IS =82.84aA VAF =28.383V NE = 3.19-VAR =19.705V NC = 1.172-RBM = 1.3ΩCJE = 1.8063fF TF = 6.76ps ITF =1mA VJC =0.81969V TR = 2.324ns MJS =0-XTI =3-NF =1-ISE =11.15fANR =1-ISC =19.237aAIRB =0.72983mARC =4ΩMJE =0.46576-VTF =0.23794VCJC =234fFXCJC =0.3-VJS =0.75VEG = 1.11eVTNOM300K BF =107.5-IKF =0.48731ABR = 5.5-IKR =0.02ARB = 5.4ΩRE =0.31111-VJE =0.8051VXTF =0.4219-PTF =0degMJC =0.30232-CJS =0fFXTB =0-FC =0.73234All parameters are ready to use, no scalling is necessary.L BI =0.47nHL BO =0.53nHL EI =0.23nHL EO =0.05nHL CI =0.56pHL EO =0.58nHC BE =136fFC CB = 6.9fFC CE =134fF please contact your local Infineon Technologiesdistributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet:http///silicondiscretesValid up to 6GHzFor non-linear simulation:• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.• Simulation of the package is not necessary for frequencies < 100MHz.For higher frequencies please add the wiring of the package equivalent circuitaround the non-linear transistor.Total power dissipation P tot = ƒ(T S)Permissible Pulse Load R thJS =ƒ(t p)101010K/WRthJSPermissible Pulse LoadP totmax/P totDC = ƒ(t p)1010Ptotmax/PtotDCCollector-base capacitance C cb= ƒ(V CB)f = 1MHzCcbTransition frequency f T= ƒ(I C) f = 1GHzV CE = Parameter in VGHzfTPower gain G ma, G ms = ƒ(I C)V CE = 2Vf = Parameter in GHzGPower Gain G ma, G ms = ƒ(f),|S21|² = f (f)V CE = 2V, I C = 20mAPower gain G ma, G ms = ƒ (V CE)I C = 20mAf = Parameter in GHzGNoise figure F = ƒ(I C) V CE = 2V, Z S = Z SoptFNoise figureF = ƒ(I C)VCE = 2V, f = 1.8GHzFNoise figureF = ƒ(f)V CE = 2V, Z S = Z SoptSource impedance for min.noise figure vs. frequencyV CE = 2V, I C = 5mA / 20mA+j50-j50。

士兰微电子 SVD540T D K 说明书

SVD540T/D/K说明书SVD540 33A、100V N沟道增强型场效应管描述SVD540T/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子新型平面低压VDMOS 工艺技术制造。

先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。

该产品可广泛应用于电子镇流器，低功率开关电源。

特点♦33A，100V，R DS(on)（典型值）=34mΩ@V GS=10V♦低栅极电荷量♦低反向传输电容♦开关速度快♦提升了dv/dt 能力产品规格分类产品名称封装形式打印名称材料包装SVD540T TO-220-3L SVD540T 无铅料管SVD540D TO-252-2L SVD540D 无卤料管SVD540DTR TO-252-2L SVD540D 无卤编带SVD540K TO-262-3L SVD540K 无卤料管极限参数(除非特殊说明，TC=25°C)参数名称符号参数范围单位SVD540T SVD540D SVD540K漏源电压V DS100 V 栅源电压V GS±20 V漏极电流T C=25°CI D33A T C=100°C 23漏极脉冲电流I DM110 A耗散功率（T C=25°C）- 大于25°C每摄氏度减少P D130 98 120 W1.04 0.78 0.96 W/°C单脉冲雪崩能量（注1）E AS695.22 mJ 工作结温范围T J-55～+150 °C 贮存温度范围T stg-55～+150 °C热阻特性参数名称符号参数范围单位SVD540T SVD540D SVD540K芯片对管壳热阻RθJC0.96 1.28 1.04 °C/W 芯片对环境的热阻RθJA62.5 62.0 62.5 °C/W关键特性参数(除非特殊说明，TC=25°C)参数符号测试条件最小值典型值最大值单位漏源击穿电压B VDSS V GS=0V，I D=250µA 100 -- -- V漏源漏电流I DSS V DS=Rated BV DSS，V GS=0V -- -- 25µA V DS=0.8 x Rated BV DSS,V GS=0V，T C=125°C-- -- 250栅源漏电流I GSS V GS=±20V -- -- ±100 nA 栅极开启电压V GS(th)V GS=V DS，I D=250µA 2.0 -- 4.0 V 导通电阻R DS(on)V GS=10V，I D=16A -- 34 44 mΩ输入电容C issV DS=25V，V GS=0V，f=1.0MHz -- 1239.00 --pF输出电容C oss-- 247.30 -- 反向传输电容C rss-- 43.70 --开启延迟时间t d(on)V DD=50V，I D=16A，R GS=5.1Ω，V GS=10V -- 10.40 --ns开启上升时间t r-- 44.00 -- 关断延迟时间t d(off)-- 45.80 -- 关断下降时间t f -- 12.67 --栅极电荷量Q gV DS=80V，I D=16A，V GS=10V -- 37.01 --nC栅极-源极电荷量Q gs-- 6.00 --栅极-漏极电荷量Q gd-- 16.55 --源-漏二极管特性参数参数符号测试条件最小值典型值最大值单位源极电流I S MOS管中源极、漏极构成的反偏P-N结-- -- 33A源极脉冲电流I SM-- -- 110源-漏二极管压降V SD I S=16A，V GS=0V -- -- 1.2 V反向恢复时间T rr I S=16A，V GS=0VdI F/dt=100A/µs（注2）-- 98.2 -- ns反向恢复电荷Q rr-- 0.37 -- nC 注：1. L=1.5mH，I AS=22.5A，R G=25Ω，开始温度T J=25°C；2. 脉冲测试：脉冲宽度≤300μs，占空比≤2%；3. 基本上不受工作温度的影响。

常用场效应管和晶体管全参数大全

常用场效应管和晶体管参数大全2010年03月04日 10:13 .elecfans.co 作者：佚名用户评论（1）关键字：晶体管参数(6)场效应管(6)常用场效应管和晶体管参数大全IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应IRF440 500V 8A 125W * * NMOS场效应IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BUZ11A 50V 25A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应常用场效应管及晶体管参数(2)晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN2SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN常用场效应管及晶体管参数(3)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿）2SB669 70V 4A 40W * * PNP(达林顿）2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP--------------------------------------------------------------------------------常用场效应管及晶体管参数(4)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N6277 180V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPNTIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ11032 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(5)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUS13A 1000V 15A 175W * * NPNBUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPNBU2506 1500V 7A 50W * * NPNBU932R 500V 15A 150W * * NPNBU806 400V 8A 60W * * NPNBU406 400V 7A 60W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BF458 250V 0.1A 10W * * NPNBD682 100V 4A 40W * * PNPMJ10015 400V 50A 200W * * NPNMJ10012 400V 10A 175W * * NPN(达林顿)MJ4502 90V 30A 200W * * PNPMJ3055 60V 15A 115W * * NPNMJ2955 60V 15A 115W * * PNPMN650 1500V 6A 80W * * NPNBUX98A 400V 30A 210W * * NPNBUX84 800V 2A 40W * * NPNBUW13A 1000V 15A 150W * * NPNBUV48A 450V 15A 150W * * NPNBUV28A 225V 10A 65W * * NPNBUV26 90V 14A 65W * * NPNBUT12A 450V 10A 125W * * NPNBUT11A 1000V 5A 100W * * NPNBUS14A 1000V 30A 250W * * NPNBD681 100V 4A 40W * * NPNBD244 45V 6A 65W * * PNPBD243 45V 6A 65W * * NPNBD238 100V 2A 25W * * PNPBD237 100V 2A 25W * * NPNBD138 60V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD135 45V 1.5A 12.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPNBC546 80V 0.2A 0.5W * * NPNBC338 50V 0.8A 0.6W * * NPNBC337 50V 0.8A 0.6W * * NPNBC327 50V 0.8 0.6W * * PNPBC307 50V 0.2AA 0.3W * * PNP--------------------------------------------------------------------------------常用场效应管及晶体管参数(6)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SDK55 400V 4A 60W * * NPN2SD2445 1500V 12.5A 120W * * NPN2SD2388 90V 3A 1.2W * * NPN(达林顿)2SD2335 1500V 7A 100W * * NPN2SD2334 1500V 5A 80W * * NPN2SD2156 120V 25A 125W 2000-20000 * NPN(达林顿)2SD2155 180V 15A 150W * * NPN2SD2036 60V 1A 1.2W * * NPN2SD2012 60V 3A 2W * * NPN2SD2008 80V 1A 1.5W * * NPN2SD1997 40V 3A 1.5W * 100MHZ NPN2SD1994 60V 1A 1W * * NPN2SD1993 50V 0.1A 0.4W * * NPN2SD1980 100V 2A 10W 1000-10000 * NPN(达林顿)2SD1978 120V 1.5A 1W 30000 * NPN(达林顿)2SD1975 180V 15A 150W * * NPN2SD1930 100V 2A 1.2W 1000 * NPN(达林顿)2SD1847 50V 1A 1W * * NPN(低噪)2SD1762 60V 3A 25W * 90MHZ NPN2SD1718 180V 15A 3.2W * 20MHZ NPN2SD1640 120V 2A 1.2W 4000-40000 * NPN(达林顿)2SD1590 150V 8A 25W 15000 * NPN(达林顿)2SD1559 100V 20A 20W 5000 * NPN(达林顿)2SD1415 80V 7A 40W 6000 * NPN(达林顿)2SD1416 80V 7A 40W 6000 * NPN(达林顿)2SD1302 25V 0.5A 0.5W * 200MHZ NPN2SD1273 80V 3A 40W * 50MHZ NPN2SD1163A 350V 7A 40W * 60MHZ NPN2SD1047 160V 12A 100W * * NPN2SD1037 150V 30A 180W * * NPN2SD1025 200V 8A 50W * * NPN(达林顿)2SD789 100V 1A 0.9W * * NPN2SD774 100V 1A 1W * * NPN2SD669 180V 1.5A 1W * 140MHZ NPN2SD667 120V 1A 0.9W * 140MHZ NPN( 达林顿 )2SD560 150V 5A 30W * * NPN( 达林顿 )2SD547 600V 50A 400W * * NPN2SD438 500V 1A 0.75W * 100MHZ NPN2SD415 120V 0.8A 5W * * NPN2SD385 100V 7A 30W * * NPN( 达林顿 )2SD325 50V 3A 25W * * NPN2SD40C 40V 0.5A 40W * * NPN( 达林顿 )2SC5252 1500V 15A 100W * * NPN2SC5251 1500V 12A 50W * * NPN2SC5250 1000V 7A 100W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(7)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC5244 1500V 15A 200W * * NPN2SC5243 1500V 15A 200W * * NPN2SC5207 1500V 10A 50W * * NPN2sc5200 230V 15A 150W * * NPN2sc5132 1500V 16A 50W * * NPN2sc5088 1500V 10A 50W * * NPN2sc5086 1500V 10A 50W * * NPN2sc5068 1500V 10A 50W * * NPN2sc5020 1000V 7A 100W * * NPN2sc4953 500V 2A 25W * * NPN2sc4941 1500V 6A 65W * * NPN2sc4927 1500V 8A 50W * * NPN2sc4924 800V 10A 70W * * NPN2sc4913 2000V 0.2A 35W * * NPN2sc4769 1500V 7A 60W * * NPN( 带阻尼 )2sc4747 1500V 10A 50W * * NPN2sc4745 1500V 6A 50W * * NPN2sc4742 1500V 6A 50W * * NPN( 带阻尼 )2sc4706 900V 14A 130W * 6MH NPN2SD1887 1500V 10A 70W * * NPN2SD1886 1500V 8A 70W * * NPN2SD1885 1500V 6A 60W * * NPN2SD1884 1500V 5A 60W * * NPN2SD1883 1500V 4A 50W * * NPN2SD1882 1500V 3A 50W * * NPN2SD1881 1500V 10A 70W * * NPN2SD1880 1500V 8A 70W * * NPN2SD1879 1500V 6A 60W * * NPN2SD1878 1500V 5A 60W * * NPN2SD1876 1500V 3A 50W * * NPN2SD1739 1500V 6A 100W * * NPN2SD1738 1500V 5A 100W * * NPN2SD1737 1500V 3.5A 60W * * NPN2SD1732 1500V 7A 120W * * NPN2SD1731 1500V 6A 100W * * NPN2SD1730 1500V 5A 100W * * NPN2SD1729 1500V 3.5A 60W * * NPN2SD1711 1500V 7A 100W * * NPN2SD1710 1500V 6A 100W * * NPN2SD1656 1500V 6A 60W * * NPN2SD1655 1500V 5A 60W * * NPN2SD1654 1500V 3.5A 50W * * NPN2SD1653 1500V 2.5A 50W * * NPN2SD1652 1500V 6A 60W * * NPN2SD1651 1500V 5A 60W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(8)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1650 1500V 3.5A 50W * * NPN2SD1632 1500V 4A 70W * * NPN 2SD1577 1500V 5A 80W * * NPN 2SD1554 1500V 3.5A 40W * * NPN 2SD1548 1500V 10A 50W * * NPN 2SD1547 1500V 7A 50W * * NPN 2SD1546 1500V 6A 50W * * NPN 2SD1545 1500V 5A 50W * * NPN 2SD1456 1500V 6A 50W * * NPN 2SD1455 1500V 5A 50W * * NPN 2SD1454 1700V 4A 50W * * NPN 2SD1434 1700V 5A 80W * * NPN 2SD1431 1500V 5A 80W * * NPN 2SD1426 1500V 3.5A 80W * * NPN 2SD1402 1500V 5A 120W * * NPN 2SD1399 1500V 6A 60W * * NPN 2SD1344 1500V 6A 50W * * NPN 2SD1343 1500V 6A 50W * * NPN 2SD1342 1500V 5A 50W * * NPN 2SD1941 1500V 6A 50W * * NPN 2SD1911 1500V 5A 50W * * NPN 2SD1341 1500V 5A 50W * * NPN 2SD1219 1500V 3A 65W * * NPN 2SD1290 1500V 3A 50W * * NPN 2SD1175 1500V 5A 100W * * NPN 2SD1174 1500V 5A 85W * * NPN 2SD1173 1500V 5A 70W * * NPN 2SD1172 1500V 5A 65W * * NPN 2SD1143 1500V 5A 65W * * NPN 2SD1142 1500V 3.5A 50W * * NPN 2SD1016 1500V 7A 50W * * NPN 2SD995 2500V 3A 50W * * NPN2SD994 1500V 8A 50W * * NPN2SD957A 1500V 6A 50W * * NPN 2SD954 1500V 5A 95W * * NPN2SD952 1500V 3A 70W * * NPN2SD904 1500V 7A 60W * * NPN2SD903 1500V 7A 50W * * NPN2SD870 1500V 5A 50W * * NPN2SD869 1500V 3.5A 50W * * NPN2SD838 2500V 3A 50W * * NPN2SD822 1500V 7A 50W * * NPN2SD821 1500V 6A 50W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(9)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W * * NPN2SC4303A 1500V 6A 80W * * NPN2SC4292 1500V 6A 100W * * NPN2SC4291 1500V 5A 100W * * NPN2SC4199A 1500V 10A 100W * * NPN2SC3883 1500V 5A 50W * * NPN2SC3729 1500V 5A 50W * * NPN2SC3688 1500V 10A 150W * * NPN2SC3687 1500V 8A 150W * * NPN2SC3686 1500V 7A 120W * * NPN2SC3685 1500V 6A 120W * * NPN2SC3486 1500V 6A 120W * * NPN2SC3485 1500V 5A 120W * * NPN2SC3484 1500V 3.5A 80W * * NPN2SC3482 1500V 6A 120W * * NPN2SC3481 1500V 5A 120W * * NPN2SC3480 1500V 3.5A 80W * * NPN2SC2125 2200V 5A 50W * * NPN2SC2027 1500V 5A 50W * * NPNBUY71 2200V 2A 40W * * NPNBU508A 1500V 7.5A 75W * * NPNBU500 1500V 6A 75W * * NPNBU209A 1700V 5A 12.5W * * NPNBU208D 1500V 5A 12.5W * * NPNBU208A 1500V 5A 12.5W * * NPNBU108 1500V 5A 12.5W * * NPN2SD1585 60V 3A 15W * * NPN2SD773 20V 2A 1W * * NPN2SC2785 60V 0.1A 0.3W * * NPN2SC403 50V 0.1A 0.1W * * NPN2SD1246 30V 2A 0.75W * * NPN2SC2570A 25V 0.07A 0.6W * * NPN2SC1047 30V 0.015A 0.15W * * NPN2SC3114 60V 0.15A 0.2W * * NPN2SD400 25V 1A 0.75W * * NPN2SC1923 40V 0.02A 0.1W * * NPN2SC2621 300V 0.2A 10W * * NPN2SC2568 300V 0.2A 10W * * NPN2SC2216 50V 0.05A 0.3W * * NPN2SC1674 30V 0.02A 0.1W * * NPN2SC536F 40V 0.1A 0.25W * * NPN2SA608F 30V 0.1A 0.25W * * PNP2SD1271A 130V 7A 40W * * NPN2SD1133 70V 4A 40W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(10)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1890A 120V 0.05A 0.3W * * NPN2SC1360 50V 0.05A 0.5W * * NPN2SA1304 150V 1.5A 25W * * PNP2SD1274A 150V 5A 40W * * NPN2SC2371 300V 0.1A 10W * * NPN2SD1378 80V 0.7A 10W * * NPN2SD553Y 70V 7A 40W * * NPNRN1204 50V 0.1A 0.3W * * NPN2SD1405Y 50V 3A 30W * * NPN2SC2878 50V 0.3A 0.4W * * NPN2SC1959 30V 0.4A 0.5W * * NPN2SC1569 300V 0.15A 1.5W * * NPN 2SC2383Y 160V 1A 0.9W * * NPN2SA1299 50V 0.5A 0.3W * * PNP2SB564A 45V 0.05 0.25W * * PNP 2SD1877 800V 4A 50W * * NPNBU508A 1500V 8A 125W * * NPN BUT11 1500V 5A 80W * * NPN2SD3505 900V 6A 50W * * NPN2SD906 1400V 8A 50W * * NPN2SD905 1400V 8A 50W * * NPN2SC1942 1500V 3A 100W * * NPN2SD1397 1500V 3.5A 50W * * NPN 2SD1396 1500V 2.5A 50W * * NPN 2SC3153 900V 6A 100W * * NPN2SD1403 1500V 6A 50W * * NPN2SD1410 1500V 3.5A 80W * * NPN 2SD2057 1500V 5A 100W * * NPN2SD2027 1500V 5A 50W * * NPN2SD953 1500V 7A 95W * * NPN2SD951 1500V 3A 65W * * NPN2SD950 1500V 3.5A 80W * * NPN2SD852 1500V 5A 70W * * NPN2SD850 1500V 3A 25W * * NPN2SD900B 1500V 5A 50W * * NPN2SD899A 1500V 4A 50W * * NPN2SD898B 1500V 3A 50W * * NPN2SD871 1500V 6A 50W * * NPN2SD870 1500V 5A 50W * * NPN2SD869 1500V 3.5A 50W * * NPN2SD1433 1500V 7A 80W * * NPN2SD1432 1500V 6A 80W * * NPN2SD820 1500V 5A 50W * * NPN常用场效应管及晶体管参数(11)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD819 1500V 3.5A 50W * * NPN2SD1497 1500V 6A 50W * * NPN2SD1398 1500V 5A 50W * * NPN2SD1427 1500V 5A 80W * * NPN2SD1428 1500V 6A 80W * * NPN2SD1426 1500V 3.5A 80W * * NPN2SC2068 70V 0.2A 0.62W * * NPN2SC1627Y 80V 0.3A 0.6W * * NPN2SC495Y 70V 0.8A 5W * * NPN2SC388A 20V 0.02A 0.2W * * NPN2SB686 100V 6A 60W * * PNP2SA940 150V 1.5A 1.5W * * PNP2SC2120Y 30V 0.8A 0.6W * * NPN2SD1555 1500V 5A 50W * * NPN2SD8806 60V 3A 30W * * NPN2SC2456 300V 0.1A 10W * * NPN2SA1300 20V 2A 0.7W * * PNP2SC304CD 60V 0.5A 0.8W * * NPN2SC2238 160V 1.5A 25W * * NPN2SC3328 80V 2A 0.9W * * NPN2SC2190 450V 5A 100W * * NPN2SA968Y 160V 1.5A 25W * * PNP2SC3402 50V 0.1A 0.3W * * NPN2SC2168 200V 2A 30W * * NPN2SC3198G 60V 0.15A 0.4W * * NPN2SC2655Y 60V 2A 0.9W * * NPN2SC1827 80V 4A 30W * * NPN2SA1266Y 50V 0.15A 0.4W * * PNP2SD880 60V 3A 30W * * NPN2SC945 50V 0.1A 0.25W * * NPN2SC3279 30V 2A 0.75W * * NPN2SC2229 200V 0.05A 0.8W * * NPN2SC2236 30V 1.5A 0.9W * * NPN2SC383 20V 0.05A 0.2W * * NPN2SA950Y 150V 0.8A 0.6W * * PNPBC548B 30V 0.2A 0.5W * * NPN2SC3399 50V 0.1A 0.3W * * NPN2SD1455 1500V 5A 50W * * NPN2SC1983R 80V 3A 30W * * NPN2SC227 300V 0.1A 0.75W * * NPN2SC1213D 50V 0.5A 0.4W * * NPN2SA778AK 180V 0.05A 0.2W * * PNPDTC114ES 50V 0.1A 0.25W * * NPN2SC3413C 40V 0.1A 0.5W * * NPN常用场效应管及晶体管参数(12)---------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC2611 300V 0.1A 1.25W * * NPN2SC1514 300V 0.1A 1.25W * * NPNDTC124ES 50V 0.1A 0.25W * * PNP2SD1078 50V 2A 20W * * NPN2SA1390 35V 0.5A 0.3W * * PNP2SD788 20V 2A 0.9W * * NPN2SD882 40V 3A 10W * * NPN2SD787 20V 2A 0.9W * * NPN2SD401AK 200V 2A 25W * * NPN2SC2610 300V 0.1A 0.8W * * NPN2SC2271N 300V 0.1A 0.75W * * NPN2SC1740 50V 0.3A 0.3W * * NPN2SC1214C 50V 0.5A 0.6W * * NPN2SC458D 30V 0.1A 0.2W * * NPN2SA673 50V 0.5A 0.4W * * PNP2SD1556 1500V 6A 50W * * NPN2SD1499 100V 5A 40W * * NPN2SD1264A 200V 2A 30W * * NPN2SD1010 50V 0.05A 0.3W * * NPN2SD966 60V 5A 1W * * NPN2SD601AR 60V 0.1A 0.2W * * NPN2SC3265Y 30V 0.8A 0.2W * * NPN2SC3063 300V 0.1A 1.2W * * NPN2SC2594 40V 5A 10W * * NPN2SC1317-R 30V 0.5A 0.4W * * NPN2SB1013A 30V 0.5A 0.3W * * PNP2SD1226 60V 3A 35W * * NPN2SC2636Y 30V 0.05A 0.4W * * NPN2SB940 200V 2A 30W * * PNP2SA720-Q 50V 0.5A 0.4W * * PNP2SD1391 1500V 5A 80W * * NPN2SC2188 45V 0.05A 0.6W * * NPN2SK301-R * 0.14A 0.25W * * N沟场效应管2SD1266 60V 3A 35W * * NPN2SD1175 1500V 5A 100W * * NPN2SD973 30V 1A 1W * * NPN2SC2923 300V 0.2A 15W * * NPN2SC2653H 250V 0.2A 15W * * NPN2SC2377C 30V 0.15A 0.2W * * NPN2SC1685Q 30V 0.1A 0.25W * * NPN2SC1573A 250V 0.07A 0.6W * * NPN2SB642-R 60V 0.2A 0.4W * * PNP2SA1309A 25V 0.1A 0.3W * * PNP2SA1018 150V 0.07A 0.75W * * PNP2SA564A 25V 0.1A 0.25W * * PNP--------------------------------------------------------------------------------常用场效应管及晶体管参数(13)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SK301-Q * 0.14A 0.25W * * N沟场效应管2SD1541 1500V 3A 50W * * NPN2SC1685 30V 0.1A 0.25W * * NPN2SC1573A 250V 0.07A 0.6W * * NPN2SA1309A 25V 0.1A 0.3W * * PNPUN4213 50V 0.1A 0.25W * * NPNUN4211 50V 0.1A 0.25W * * NPNUN4212 50V 0.1A 0.25W * * NPNUN4111 50V 0.1A 0.25W * * PNP2SD1541 1500V 3A 50W * * NPN2SD965 40V 5A 0.75W * * NPN2SC2839 30V 0.1A 0.1W * * NPN2SC2258 250V 0.1A 1W * * NPN2SC1846 45V 1A 1.2W * * NPN2SC1573A 250V 0.07A 0.6W * * NPN2SA1309A 25V 0.1A 0.3W * * PNP2SD1544 1500V 3.5A 40W * * NPN2SD802 900V 6A 50W * * NPN2SC2717 35V 0.8A 7.5W * * NPN2SC2482 150V 0.1A 0.9W * * NPN2SC2073 150V 1.5A 25W * * NPN2SC1815Y 60V 0.15A 0.4W * * NPN2SB774T 30V 0.01A 0.25W * * PNP2SA1015R 50V 0.15A 0.4W * * PNP2SA904 90V 0.05A 0.2W * * PNP2SA562T 30V 0.4A 0.3W * * PNP。

MRF系列产品介绍

MRF系列产品介绍(仅其中一部分)型号功能MRF581 5G 0.6WMRF181 800-1G 10WMRF182 1G 30WMRF281 800-2.6G 4WMRF282 2.6G 20WMRF284 800-2.6G 30W 带螺丝座MRF20060 1.7-2.6G 60WMRF9045 9G 45WMRF5003 520M 15WMRF5007 520M 15WMRF1517 520M 15WMRF1507 520M 15WMRF1511 175M 15WMRF1518 175M 15WMRF553 175M 1.5W33P50 520M 1W2SK2595 1G 10WMRF10005960-1215 MHz, 5.0 W, 28 V 微波功率晶体管MRF10031960-1215 MHz, 30 W (Peak), 36 V 微波功率晶体管MRF10120960-1215 MHz, 120 W (Peak), 36 V 微波功率晶体管MRF101501025-1150 MHz, 150 W (Peak), 50 V 微波功率晶体管MRF103501025-1150 MHz, 350 W (Peak), 50 V 微波功率晶体管MRF105021025-1150 MHz, 500 W (Peak), 50 V 微波功率晶体管MRF134达到400 MHz, 5.0 W, 28 V N 宽带射频功率MOSFETMRF136达到400 MHz, 15 W, 28 V N 宽带射频功率MOSFET MRF141175 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF141G175 MHz, 300 W, 28 V N 宽带射频功率MOSFETMRF148A达到175 MHz, 30 W, 50 V N 宽带射频功率MOSFETMRF150达到150 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151175 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151G175 MHz, 300 W, 50 V N 宽带射频功率MOSFETMRF15480 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF157达到80 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF158达到500 MHz, 2.0 W, 28 V TMOS N 宽带射频功率FETMRF160500 MHz, 4.0 W, 28 V N 宽带射频功率MOSFETMRF160061.6 GHz, 6.0 W, 28 V 射频功率晶体管MRF160301.6 GHz, 30 W, 28 V RF 射频功率晶体管MRF166C500 MHz, 20 W, 28 V N 宽带射频功率MOSFETMRF166W500 MHz, 40 W, 28 V TMOS N宽带射频功率FETMRF171A150 MHz, 45 W, 28 V N 宽带射频功率MOSFETMRF173175 MHz, 80 W, 28 V N 宽带射频功率MOSFETMRF174200 MHz, 125 W, 28 V N 宽带射频功率MOSFETMRF177400 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF275G100–500 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF275L500 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF42630 MHz, 25 W, 28 V 射频功率晶体管NPN SiMRF587500 MHz, 15 V, NF = 3.0 dB, 高频晶体管MRFIC1818 1.7-1.9G 2WMRF183 1G 45WMRF187 800-960MHz 85WMRF7042 900MHz 45WMRF175 400MHz 200WMRF581 5G 0.6W2SK2596 800-960MHz 1.5WBFG10 25G 0.6VBFG21 18G 4.5V 0.5A 0.6WBFG403 17G 4.5V 16MA 0.3WBFG410 22G 4.5V 12MA 135MWBFG425 25G 4.5V 30MA 135MWBFG450 45G 0.2WBFG540 45G 3V 30MA 135MWBFG541 9G 0.6WBLT81 800-960M 1.2WTP3022 800-960M 15WTDA1576 ICSRF7062 800-960M 150WMHL9236 800-960M 3WMHL7008 800-960M 3WMHL9128 800-960M 3WATF10136 4G 0.4WCMM2308 800-2.7G 1WCMM1330 1.7-1.9G 2WPF0030 860-915M 7W终端负载50欧5W 3G,18G 驻波小于1.06高频电阻50欧100欧30W 100W 3G型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRF281 800-2.6G 4W 4K 10 BFG10 25G 0.6W 10K 1MRF282 800-2.6G 10W 4K 15 BFG21 18G 4.5V 0.5A 0.6W 5K 1MRF284 800-2.6G 30W 带螺丝座4K 20 BFG403 17G 4.5V 16MA 0.3W 5K 0.5 MRF20060 1.7-2.6G 60W 6K 30 BFG410 22G 4.5V 12MA 135MW 5K 0.5 MRF181 800-960M 10W 2K 10 BFG425 25G 4.5V 30MA 135MW 4K 0.5 MRF182 1G 30W 500PC 15 BFG450 45G 0.2W 1K 3MRFIC1818 1.7-1.9G 2W 2K 10 BFG540 45G 3V 30MA 135MW 2K 3MRF187 800-960M 85W 1K 30 BFG541 9G 0.6W 3K 0.5MRF7042 900M 45W 2K 15 BFG198 9G 1W 3K 0.5MRF9045 9G 45W 200PC 30 TP3022 800-960M 15W 4K 6MRF581 5G 0.6W 5K 0.5 TDA1576 IC 2K 2MRF5003 520M 15W 5K 3 SRF7062 800-960M 150W 2K 40MRF5007 520M 15W 5K 5 MHL9236 800-960M 3W 200PC 20MRF1517 520M 15W 2K 5 MHL7008 800-960M 3W 500PC 15MRF1507 520M 15W 2K 5 MHL9128 800-960M 3W 500PC 15MRF1511 175M 15W 2K 5 ATF10136 4G 0.4W 10K 1.5MRF1518 175M 15W 1K 5 CMM2308 800-2.7G 1W 10K 1.5MRF553 175M 1.5W 6K 0.5 CMM1330 1.7-1.9G 2W 5K 2MRF137 225MHz 30W 100PC 20 RF2125 1.5-2.2G 1W 1K 5MRF141 225MHZ 150W 100PC 40 PF0030 860-915M 7W 2K 2MRF151G 175MHz 300W 500PC 100 2SC1971 175MHz 7W 5K 1MRF154 150MHz 600W 500PC 200 2SC3356 6.5G 0.2W 5K 0.1MRF175G 500MHz 150W 500PC 100 2SC3357 6.5G 2W 5K 0.2MRF6404 1.8-2G 1K 10 2SC2407 500MHz 0.6W 10K 0.2BLT50 500M 1.2W 5K 0.6 2SC1906 1G 150MW 10K 0.05BLT81 400-960M 1.2W 3K 1 BLU98 5G 0.7W 5K 0.52SK2596 800-960M 1.5W 5K 0.5 33P55 800-960MHz 60W 5K 102SK2595 800-960M 10W 10K 3 E626 800-960Mhz 60W 5K 103SK228 1G 高放双栅管5K 0.15 终端负载50欧5W 3G,18G 驻波小于1.06 3K 10,100温补晶体12.8MHZ 贴片7x7M 5k 3 高频电阻50欧100欧30W 100W 3G 10k 2 MRF92822A 7W 手持对讲机/长距离无绳电话/车载台/手机专用功率发射晶体管集成电路ICMC3361 10K 0.1 HT9200 5K 0.2MC33110 5K 0.2 HT9170 5K 0.2MC34119 5K 0.1 93C66 5K 0.1LM386 5K 0.1 24C08 5K 0.2M54958 5K 1.5 EM92547 5K 0.2M64082 5K 0.5 KA4588 5K 0.1TB31202 5K 0.4 KA567 5K 0.1手机功放及常用元件型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRFIC0913 800-1000MHZ 2W 现货面议AP109 900MHZ 2W 现货面议27E31 900MHZ 2W 现货面议AP119 1800MHZ 2W 现货面议08K38 900MHZ 2W 现货面议4370451 900MHZ 2W 现货面议08K40 900MHZ 2W 现货面议4370453 1800MHZ 2W 现货面议08K07 900MHZ 2W 现货面议TRF6053 900MHZ 2W 现货面议08K11 900MHZ 2W 现货面议TRF2253 频率合成IC 现货面议PF01420B 900MHZ 2W 现货面议13MHZ 温补晶体现货面议PF01412A 1800MHZ 2W 现货面议881-942 声表滤波器现货面议PF01411B 900MHZ 2W 现货面议PF014110B 1800MHZ 2W 现货面议常用元件MRF5711 8G 0.33W 现货面议BFQ67 8G 0.3W 现货面议MRF5811 5G 0.7W 现货面议BFG540 9G 0.4W 现货面议MMBR941 8G 0.25W 现货面议BFR182W 8G 0.3W 现货面议MMBR503 1G 0.3W 现货面议BFR91 6G 0.3W 现货面议MMBR901 4G 0.3W 现货面议BU508 现货面议84UD22182EB-9C 现货面议Y759B 现货面议F741529AGHH 现货面议08122B 现货面议TWL3011GGM 现货面议089711747 现货面议LMST 现货面议LS28 现货面议。

飞利浦 BFG540 BFG540 X BFG540 XR 数据手册

DATA SHEETProduct speciﬁcation Supersedes data of 1997Dec032000May23BFG540; BFG540/X; BFG540/XR NPN 9GHz wideband transistor 查询BFG540供应商NPN 9GHz wideband transistorBFG540/XRFEATURES•High power gain•Low noise figure•High transition frequency•Gold metallization ensures excellent reliability. DESCRIPTIONNPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors,satellite TV tuners(SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages.PINNINGPIN DESCRIPTIONBFG540 (Fig.1) Code: N371collector2base3emitter4emitterBFG540/X (Fig.1) Code: N431collector2emitter3base4emitterBFG540/XR (Fig.2) Code: N491collector2emitter3base4emitterFig.1 SOT143B.handbook, 2 columnsTop view MSB0141234Fig.2 SOT143R.handbook, 2 columnsTop view MSB0351243NPN 9GHz wideband transistorBFG540/XRQUICK REFERENCE DATA LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).Note1.T s is the temperature at the soldering point of the collector pin.THERMAL CHARACTERISTICS Note1.T s is the temperature at the soldering point of the collector pin.SYMBOL PARAMETERCONDITIONSMIN.TYP .MAX.UNIT V CBO collector-base voltage open emitter −−20V V CES collector-emitter voltage R BE =0−−15V I C DC collector current −−120mA P tot total power dissipation T s ≤60°C; note 1−−400mW h FE DC current gain I C =40mA; V CE =8V; T j =25°C 100120250C re feedback capacitance I C =0; V CE =8V; f =1MHz −0.5−pF f T transition frequencyI C =40mA; V CE =8V; f =1GHz;T amb =25°C−9−GHz G UMmaximum unilateral power gainI C =40mA; V CE =8V; f =900MHz;T amb =25°C−18−dB I C =40mA; V CE =8V; f =2GHz;T amb =25°C−11−dB insertion power gain I C =40mA; V CE =8V; f =900MHz;T amb =25°C1516−dB Fnoise ﬁgureΓs =Γopt ; I C =10mA; V CE =8V;f =900MHz; T amb =25°C − 1.3 1.8dB Γs =Γopt ; I C =40mA; V CE =8V;f =900MHz; T amb =25°C − 1.9 2.4dB Γs =Γopt ; I C =10mA; V CE =8V;f =2GHz; T amb =25°C−2.1−dBSYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT V CBO collector-base voltage open emitter −20V V CES collector-emitter voltage R BE =0−15V V EBO emitter-base voltage open collector− 2.5V I C DC collector current −120mA P tot total power dissipation T s ≤60°C; note 1−400mW T stg storage temperature −65+150°C T j junction temperature−150°CSYMBOL PARAMETERCONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering pointT s ≤60°C; note 1290K/Ws 212NPN 9GHz wideband transistorBFG540/XRCHARACTERISTICST j =25°C unless otherwise speciﬁed.Notes1.G UM is the maximum unilateral power gain, assuming s 12 is zero and2.V CE =8V; I C =40mA; R L =50Ω; T amb =25°C;f p =900MHz; f q =902MHz;measured at f (2p −q)=898MHz and f (2q −p)=904MHz.3.d im =−60dB (DIN 45004B); I C =40mA; V CE =8V; Z L =Z S =75Ω; T amb =25°C;V p =V O ; V q =V O −6dB; V r =V O −6dB;f p =795.25MHz; f q =803.25MHz; f r =805.25MHz;measured at f (p +q −r)=793.25MHz.4.I C =40mA; V CE =8V; V O =275mV; T amb =25°C;f p =250MHz; f q =560MHz; measured at f (p +q)=810MHz.SYMBOL PARAMETERCONDITIONSMIN.TYP .MAX.UNIT I CBO collector cut-off current I E =0; V CB =8V −−50nA h FE DC current gain I C =40mA; V CE =8V60120250C e emitter capacitance I C =i c =0; V EB =0.5V; f =1MHz −2−pF C c collector capacitance I E =i e =0; V CB =8V; f =1MHz −0.9−pF C re feedback capacitance I C =0; V CB =8V; f =1MHz −0.5−pF f T transition frequencyI C =40mA; V CE =8V; f =1GHz;T amb =25°C−9−GHz G UMmaximum unilateral power gain (note 1)I C =40mA; V CE =8V; f =900MHz;T amb =25°C−18−dB I C =40mA; V CE =8V;f = 2GHz;T amb =25°C−11−dB insertion power gain I C =40mA; V CE =8V; f =900MHz;T amb =25°C1516−dB Fnoise ﬁgureΓs =Γopt ; I C =10mA; V CE =8V;f =900MHz; T amb =25°C − 1.3 1.8dB Γs =Γopt ; I C =40mA; V CE =8V;f =900MHz; T amb =25°C − 1.9 2.4dB Γs =Γopt ; I C =10mA; V CE =8V;f =2GHz; T amb =25°C− 2.1−dB P L1output power at 1dB gain compressionI C =40mA; V CE =8V; R L =50Ω;f =900MHz; T amb =25°C −21−dBm ITO third order intercept point note 2−34−dBm V O output voltagenote 3−500−mV d 2second order intermodulation distortionnote 4−−50−dBs 212G UM 10s 2121s 112–()1s 222–()--------------------------------------------------------dB.log =NPN 9GHz wideband transistorBFG540/XRFig.3 Power derating curve.handbook, halfpage050100200600200400MBG249150P tot (mW)T s(o C)V CE ≤10V.Fig.4DC current gain as a function of collector current.V CE =8V; T j = 25°C.handbook, halfpage025050100150200MRA74910−210−1110102h FE I C (mA)Fig.5Feedback capacitance as a function of collector-base voltage.I C =0; f =1MHz.handbook, halfpage04C re(pF)V CB (V)81210.80.60.40.2MRA750Fig.6Transition frequency as a function of collector current.f =1GHz; T amb =25°C.handbook, halfpage12048f T (GHz)I C (mA)MRA75110−1110102V CE = 8 V V CE = 4 VNPN 9GHz wideband transistorBFG540/XRFig.7 Gain as a function of collector current.V CE =8V; f =900MHz.MSG =maximum stable gain; G max =maximum available gain;G UM =maximum unilateral power gain.handbook, halfpage020I C (mA)4060252015gain (dB)105MRA752G UMG max MSGFig.8 Gain as a function of collector current.V CE =8V; f =2GHz.G max =maximum available gain;G UM =maximum unilateral power gain.handbook, halfpage020I C (mA)4060252015gain (dB)105MRA753G UMG maxFig.9 Gain as a function of frequency.I C =10mA; V CE =8V.G UM =maximum unilateral power gain;MSG =maximum stable gain; G max =maximum available gain.handbook, halfpage50gain (dB)010MRA754102103104102030f (MHz)40MSGG UMG maxFig.10 Gain as a function of frequency.handbook, halfpage50gain (dB)010MRA755102103104102030f (MHz)40MSGG UM G maxI C =40mA; V CE =8V.G UM =maximum unilateral power gain;MSG =maximum stable gain; G max =maximum available gain.NPN 9GHz wideband transistorBFG540/XRFig.11Intermodulation distortion as a function ofcollector current.handbook, halfpage1060−20−70−60−50−40−30203040d im(dB)I C (mA)50MEA973Fig.12Second order intermodulation distortion asa function of collector current.handbook, halfpage1060−20−70−60−50−40−30203040d 2(dB)I C (mA)50MEA972Fig.13Minimum noise figure and associatedavailable gain as functions of collector current.V CE =8V.handbook, halfpage501250−510G ass (dB)15203F min(dB)I C (mA)4MRA7601102102000 MHz1000 MHz 2000 MHz1000 MHz f = 900 MHz G assF min900 MHz 500 MHzFig.14Minimum noise figure and associatedavailable gain as functions of frequency.V CE =8V.handbook, halfpage50125−510G ass (dB)15203F min(dB)f (MHz)4MRA761102104103G ass10 mAF min40 mA 40 mAI C = 10 mANPN 9GHz wideband transistorBFG540/XRFig.15 Noise circle figure.I C =10mA; V CE =8V; Z o =50Ω; f =900MHz.handbook, full pagewidthMRA7620.20.60.40.81.01.05210.50.20.20.51250.20.5F = 1.5 dB125180°−135°−90°−45°0°45°90°135°F = 2 dBF = 3 dBF min = 1.3 dBOPT I C =10mA; V CE =8V; Z o =50Ω; f =2GHz.Fig.16 Noise circle figure.handbook, full pagewidthMRA7630.20.60.40.81.01.05210.50.20.51250.20.5125180°−135°−90°−45°0°45°90°135°OPT MSF = 2.5 dB F = 3 dBF = 4 dBG= 10 dBG = 9 dBG = 8 dB G max = 11.4 dB F min = 2.1 dBNPN 9GHz wideband transistorBFG540/XRI C =40mA; V CE =8V; Z o =50Ω.Fig.17 Common emitter input reflection coefficient (s 11).handbook, full pagewidthMRA7560.20.60.40.81.01.05210.50.200.20.51250.20.53 GHz125180°−135°−90°−45°0°45°90°135°40 MHzFig.18 Common emitter forward transmission coefficient (s 21).I C =40mA; V CE =8V.handbook, full pagewidthMRA7575040302010180°−135°−90°−45°0°45°90°135°40 MHz3 GHzNPN 9GHz wideband transistorBFG540/XRFig.19 Common emitter reverse transmission coefficient (s 12).I C =40mA; V CE =8V.handbook, full pagewidthMRA7580.250.200.150.10 3 GHz0.05180°−90°−135°−45°0°45°90°135°40 MHz Fig.20 Common emitter output reflection coefficient (s 22).handbook, full pagewidthMRA7590.20.60.40.81.01.05210.50.200.20.51250.20.5125180°−135°−90°−45°0°45°90°135°40 MHz3 GHzI C =40mA; V CE =8V; Z o =50Ω.NPN 9GHz wideband transistorBFG540/XRPACKAGE OUTLINESUNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECEIAJmm1.10.9A 1max 0.1b 10.880.78c 0.150.09D 3.02.8E 1.41.2H E y w v Q 2.52.10.450.150.550.45e 1.9e 11.7L p 0.10.10.2b p 0.480.38DIMENSIONS (mm are the original dimensions)SOT143B97-02-2801 2 mmscalePlastic surface mounted package; 4 leadsSOT143BD H EE A B v M AXAA 1L pQdetail Xcyw M e 1eB2134b 1b pNPN 9GHz wideband transistorBFG540/XRUNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECEIAJ mm1.10.9A 1max 0.1b 10.880.78c 0.150.09D 3.02.8E 1.41.2H E y w v Q 2.52.10.550.250.450.25e 1.9e 11.7L p 0.10.10.2b p 0.480.38DIMENSIONS (mm are the original dimensions)SOT143RSC-61B97-03-1099-09-1301 2 mmscalePlastic surface mounted package; reverse pinning; 4 leads SOT143RD H EE A B v M AXAA 1L pQdetail Xcyw M e 1eB1243b 1b pNPN 9GHz wideband transistorBFG540/XRDATA SHEET STATUS Note1.Please consult the most recently issued data sheet before initiating or completing a design.DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1)Objective speciﬁcationDevelopmentThis data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may change in any manner without notice.Preliminary speciﬁcation QualiﬁcationThis data sheet contains preliminary data,and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.Product speciﬁcation ProductionThis data sheet contains ﬁnal speciﬁcations. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.DEFINITIONSShort-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.Exposure to limiting values for extended periods may affect device reliability.Application information Applications that are described herein for any of these products are forillustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.DISCLAIMERSLife support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products canreasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes Philips Semiconductorsreserves the right to make changes,without notice,in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. PhilipsSemiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.NPN 9GHz wideband transistorBFG540/XRNOTESNPN 9GHz wideband transistorBFG540/XRNOTES© Philips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Internet: 200069Philips Semiconductors – a worldwide companyFor all other countries apply to: Philips Semiconductors,International Marketing &Sales Communications, Building BE-p, P.O.Box 218,5600MD EINDHOVEN, The Netherlands,Fax.+31402724825Argentina: see South AmericaAustralia: 3 Figtree Drive, HOMEBUSH, NSW 2140,Tel.+61297048141,Fax.+61297048139Austria:Computerstr. 6, A-1101 WIEN, P.O. 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主要应用于超高频微波、VHF、UHF 和 CATV 高频宽带低噪声放大器中，
1
2
SOT143B
3
4
如卫星电视调谐器、CATV 放大器、模拟数字无绳电话、雷达探测器、射频模块和
光纤传输中的中继放大器等产品；集电极-发射极击穿电压：BVCEO=15V，最大集电极电流：IC=120mA,集
2
1
SOT143R
BFG540 NPN 微波低噪声晶体管
北京鼎霖电子科技
4. 电参数及规格（除非标注，否则都是在 TJ=25℃条件下）：
参数名称集电极截止电流直流电流放大系数特征频率反馈电容集电极电容发射极电容插入功率增益
噪声系数
最大单边功率增益
第三阶截取点
输出电压
输出功率在 1dB 的增益压缩
二阶互调失真
符号 ICBO hFE fT Cre CC Ce
∣S21∣2
NF
GUM
ITO
VO
PL1
d2
测试条件
VCB=6V,IE=0
VCE=6V,IC=20mA IC=40mA VCE=8V, f=1MHz, Tamb=25℃ IC=iC=0,VCB=8V,f=1MHz
IE=ie=0,VCB=8V,f=1MHz
34
500
21
-50
最大值 0.05 250
1.8 GHz pF pF pF dB dB dB dB dB dB
dBm
mV
dBm
dB

5.典型特征曲线：
BFG540 NPN 微波低噪声晶体管
北京鼎霖电子科技

IC=iC=0,VEB=0.5V,f=1MHz IC=40mA,VCE=8V,f=900MHz, Tamb=25℃ VCE=8V,IC=10mA,f=900MHz, Tamb=25℃ VCE=8V,IC=40mA,f=900MHz, Tamb=25℃ VCE=8V,IC=10mA,f=2GHz, Tamb=25℃ IC=40mA,VCE=8V,f=900MHz, Tamb=25℃ IC=40mA,VCE=8V,f=2GHz ， Tamb=25℃ VO=275mV,IC=40mA,VCE=8 V,RL=50Ω,fp=900MHz, fq=902MHz,Tamb=25℃ VO=275mV,IC=40mA,VCE=8 V,RL=50Ω,fp=795.25MHz, fq=803.25MHz,fr=803.25MHz ,Tamb=25℃
IC=40mA,VCE=8V,zs=zL=75Ω ,f=900MHz, Tamb=25℃
VO=275mV,IC=40mA,VCE=8 V,RL=50Ω,fp=250MHz, fq=560MHz,Tamb=25℃
最小值 60 15 -
-
-
-
-
典型值 -
120 9 0.5 0.9 2.0 16 1.3 1.9 2.1 18 11
电极耗散功率：PC=400mW，特征频率：fT=9GHz；
采用 4 引脚（宽集电极引脚与双发射极引脚）的 SOT143B 和 SOT143R 表面贴塑封。
2. 封装形式和引脚定义：
型号(Model) 封装形式(Package) 本体激光标示(Marking)
引脚(Pin)1 引脚(Pin)2 引脚(Pin)3 引脚(Pin)4
1.3±0.1
北京鼎霖电子科技
0.1 TYP.
0.1±0.04
1.0 TYP.
2.4±0.1
0.83±0.05
1.9±0.05
3
4
Marking
2
1
0.4±0.1
1.7±0.05
2.9±0.05
0.42±0.06
PIN CONNECTIONS 1.Collector 3.Base 2&4. Emitter
4 Inner Box 4 Inner Box

7.包装信息：
封装形式 Package
SOT143B SOT143R
PACKAGE INFORMATION
数量/盘 Shipping 盘/中盒 Inner Box
3000pcs/Tape&Reel 3000pcs/Tape&Reel
15Tape&Reel 15Tape&Reel
中盒/箱 Carton
参数名称集电极-基极击穿电压集电极-发射极击穿电压发射极-基极击穿电压集电极电流耗散功率最高结温储存温度
符号 BVCBO BVCEO BVEBO
IC PT TJ Tstg
额定值 20 15 2.5 120 400 150
-65～+150
单位 V V V mA mW ℃
℃

BFG540 SOT143B
WMG collector
base emitter emitter
BFG540/X SOT143B
WMM collector emitter
base emitter
BFG540/XR SOT143R
WMR collector emitter
base emitter
3. 极限参数（Tamb=25℃）：
BFG540 NPN 微波低噪声晶体管
北京鼎霖电子科技
BFG540 NPN TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
1. 简述：
Lead-free
Top view
4
3
本芯片采用硅外延工艺制造，具有高功率增益、低噪声系数、较宽的转换频率、低漏电流、金材质引出结构，具有较高的可靠性；
BFG540 NPN 微波低噪声晶体管
北京鼎霖电子科技
0.1 TYP.
0.1±0.04
1.0 TYP.
6.封装尺寸示意图：

2.4±0.1
0.42±0.06
BFG540 NPN 微波低噪声晶体管
SOT143R PACKAGE DIMENSIONS ( Units:mm)