亿光光耦EL208
亿光EL30系列光耦及过零检测
亿光亿光过零检测过零检测过零检测光耦光耦
驱动大功率交流器件时常用双向可控硅进行功率控制，根据控制方式的不同有过零控制和移相控制。
不管哪种控制都要对零点进行检测，因为双向过控硅的特性是到了交流的零点，可控硅会自动关闭输出。
我们检测零点目的就是可控硅在零点关闭输出后，我们可以根据功率的需求选择时间来重新触发可控硅。
但对于单片机弱电直接控制交流肯定是不现实的，用继电器控制只能实现简单的慢速的开关量控制，而如果要实现功率调节，我们就需要用光特性的固态继电器，这种器件比较贵。
而假如用光耦肯定也是不行的，因为普通的光耦是单向器件，对于交流的网电它是不能实现控制的。
在这种情况下，我们最好的选择就是用EL30XX 系列的光控
可控硅，用得最多的EL3053和EL3083，它们的前端触发电流都是5mA ，隔离电压达到5000Vrms ，适合于对电绝缘特性要求高的工控或医疗电子行业。
EL3053和EL3083的主要区别就是EL3083有过零检测，MOC3053没有过零检测，对于有过零检测功能的EL3083，它每次在过零点的时候会判断有没有光输入，即有没有前置电流If ，如果有If ，那么在这个周期之内，它是导通的，所以它只能决定一个网电源周期内它是不是导通的，而不能决定在一个周期的某一个时刻
开始导通。
基于这种特性我们可以用它来实现过零控制，过零控制的缺点是控制精度低，优点是对电网没有污染。
对于没有过零检测的EL3053来说，它在有光输入的时刻开始到这个周期的结束它都是导通的。
基于这种特性，如果我们已经检测到了零点，我们就可以在零点的时刻开始延时一段时间来输入前置电流If，用它来实现移相检测。
QQ:312066116。
亿光光耦EL3043,温度控制专用光耦
6PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER EL303X, EL304X, EL306X, EL308X SeriesFeatures:• Peak breakdown voltage -250V: EL303X -400V: EL304X -600V: EL306X -800V: EL308X• High isolation voltage between input and output (Viso=5000 V rms )•Zero voltage crossing• Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL303X, EL304X, EL306X and EL308X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac.They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 110 to 380 VAC lines,such as solid-state relays, industrial controls, motors, solenoids and consumer appliances.Applications●Solenoid/valve controls ●Light controls●Static power switch ●AC motor drivers ●E.M. contactors●Temperature controls ●AC Motor starters亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL303XV DRM250V EL304X400EL306X600EL308X800Peak Repetitive Surge Current(pw=1ms,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.6mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F-- 1.5V I F=30mA Reverse Leakage current I R--10µA V R=6V OutputParameter SymbolMin.Typ.*Max.Unit ConditionPeak Blocking Current EL303XEL304XI DRM1--100nAV DRM = Rated V DRMI F=0mAEL306XEL308X500Peak On-state Voltage V TM--3V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL303XEL304XEL306X dv/dt1000--V/µsV PEAK=Rated V DRM, I F=0(Fig. 10)EL308X600--Inhibit Voltage (MT1-MT2voltage above which devicewill not trigger)V INH--20V I F= Rated I FTLeakage in lnhibited State I DRM2--500µA I F= Rated I FT,V DRM=Rated V DRM, off stateTransfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3031EL3041EL3061EL3081I FT--15mA Main terminal Voltage=3V EL3032EL3042EL3062EL3082--10EL3033EL3043EL3063EL3083--5Holding Current I H-280-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 600V for EL306X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK0.63 x 600τRCdv/dt = = 378τRC0.632 x V PEAK τRCdv/dt =50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV TA KT1T2Zero Crossing CircuitOrder InformationPart NumberEL303XY(Z)-Vor EL304XY(Z)-Vor EL306XY(Z)-Vor EL308XY(Z)-VNoteX = Part No. (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V=VDE safety approved optionOption Description Packing quantity None Standard DIP-665units per tube M Wide lead bend(0.4 inch spacing)65units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes Everlight3083denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE optionEL3083YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.11.5±0.11.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光光耦EL3023
6PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER EL301X, EL302X, EL305X SeriesFeatures:• Peak breakdown voltage -250V: EL301X -400V: EL302X -600V: EL305X• High isolation voltage between input and output (Viso=5000 V rms )• Compact dual-in-line package • Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL301X, EL302X and EL305X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac.They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations.Applications●Solenoid/valve controls ●Lamp ballasts●Static AC power switch●Interfacing microprocessors to 115 to 240Vac peripherals ●Incandescent lamp dimmers ●Temperature controls ●Motor controlsSchematic126543Pin Configuration 1. Anode 2. Cathode3. No Connection4. Terminal5. Substrate(do not connect)6. Terminal亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL301XV DRM250V EL302X400EL305X600Peak Repetitive Surge Current(pw=100μs,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.4mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F- 1.18 1.5V I F=10mA Reverse Leakage current I R--10µA V R=6V OutputParameter Symbol Min.Typ.*Max.Unit ConditionPeak Blocking Current I DRM--100nA V DRM = Rated V DRM I F=0mAPeak On-state Voltage V TM-- 2.5V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL301XEL302X dv/dt-100-V/µsV PEAK=Rated V DRM,I F=0 (Fig. 8)EL305X1000--V PEAK=400V,I F=0 (Fig. 8)Transfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3020I FT30mA Main terminal Voltage=3V EL3010EL3021EL3051--15EL3011EL3022EL3052--10EL3012EL3023EL3053--5Holding Current I H-250-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 8. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 400V for EL302X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV T A KT1T20.63 x 400τRCdv/dt = = 252τRC0.632 x V PEAK τRCdv/dt =Order InformationPart NumberEL301XY(Z)-Vor EL302XY(Z)-Vor EL305XY(Z)-VNoteX = Part No. for EL301x (0, 1 or 2)X = Part No. for EL302x, EL305x (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V = VDE safety approved (optional)Option Description Packing quantity None Standard DIP-665 units per tube M Wide lead bend (0.4 inch spacing)65 units per tube S Surface mount lead form65 units per tube S(TA)Surface mount lead form + TA tape & reel option1000 units per reel S (TB)Surface mount lead form + TB tape & reel option1000 units per reel S1 (TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1 (TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes EVERLIGHT3053 denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE (optional)EL3053YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.1 1.5±0.1 1.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Revision : 7Release Date:2014-09-24 17:43:02.011Copyright © 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.7Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin ) 150 °C Temperature max (T smax )200°CTime (T smin to T smax ) (t s )60-120 seconds Average ramp-up rate (T smax to T p ) 3 °C/second maxOtherLiquidus Temperature (T L )217 °C Time above Liquidus Temperature (t L )60-100 sec Peak Temperature (T P )260°C Time within 5 °C of Actual Peak Temperature: T P -5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature 8 minutes max.Reflow times 3 times .Revision : 7Release Date:2014-09-24 17:43:02.012 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.70 DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光红外线接收头电路工作原理.
亿光红外线接收头电路工作原理文章出处:广州市超毅电子有限公司亿光红外线接收头主要应用在机顶盒,红外遥控系统上,亿光代理商超毅电子讲解一下关于接收头的工作原理,从电路,PD晶片以及放大电路中分析亿光红外线接收头的工作原理。
首先大家来看一下亿光红外线接收头的系统框架:从PD(光电二极管及其偏置电路上分析亿光红外线接收头的工作原理:PD晶片感应信号红外光,将接收到的光信号转换成电流信号。
红外线接收头的偏置电路向提供PD提供合理的方向偏置条件;对信号起可变阻抗的功效,消除干扰信号;将有大部分用信号传送到后级放大器。
TA(阻抗变换放大电路在PD和后级放大器之间起阻抗转换作用,将电流信号变换成电压信号;分离感应电流的交流和直流分量。
红外线接收头CGA(可控增益放大电路提供整个模块的主要增益(50-80dB;可以接受指令改变增益;受控于AGC(自动增益控制。
BF(带通滤波器根据信号的频域特征来消除干扰的手段,能消除来自于各种干扰源的干扰信号;通频带宽度为4KHz;优值为7-10以上;中心频率在IC出厂时调好,有多种中心频率供选用。
AGC(自动增益控制电路根据信号的时域特征来消除干扰的手段,能消除各种不同时间特征参数的干扰信号;基于脉冲簇时长和脉冲簇之间的间隙时间等参数,判别有用信号或干扰信号;不同型号的IC,对时间参数的判别依据不同;遇到干扰时,将CGA的增益调到最小,不让干扰信号通过;不会影响有用信号的接收;在黑暗的环境下,AGC将CGA的增益控制到很大的数值,但要保证没有自发的输出。
以上就是亿光红外线接收头的工作原理,根据各电路分析的红外线接收头接收头,亿光代理商超毅电子主推红外线接收头IRM3638系列,如果对于红外线接收头的技术咨询,可直接咨询客服,我们会为您提供技术支持以及应用资料。
免费咨询热线4008-800-932.。
亿佰特E28-2G4M27S 产品规格书说明书
E28-2G4M27S产品规格书SX1280 2.4GHz 500mW SPI 高速LoRa模块目录第一章产品概述 (2)1.1 产品简介 (2)1.2 特点功能 (2)1.3 应用场景 (2)第二章规格参数 (3)2.1 极限参数 (3)2.2 工作参数 (3)第三章机械尺寸与引脚定义 (4)第四章基本操作 (5)4.1硬件设计 (5)4.2软件编写 (5)第五章基本应用 (6)5.1 基本电路 (6)第六章常见问题 (7)6.1 传输距离不理想 (7)6.2 模块易损坏 (7)6.3 误码率太高 (7)第七章焊接作业指导 (8)7.1 回流焊温度 (8)7.2 回流焊曲线图 (8)第八章相关型号 (9)第九章天线指南 (9)9.1 天线推荐 (9)9.2天线选择 (9)修订历史 (10)关于我们 (11)第一章产品概述1.1 产品简介E28-2G4M27S是亿佰特公司设计生产的2.4GHz射频收发模块，发射功率500mW，SPI接口，具有极低的低功耗模式流耗；该模块为小体积贴片型(引脚间距1.27mm)，自带高性能PCB板载天线，采用52MHz工业级高精度低温漂晶振，保证其工业特性和其稳定性能。
采用Semtech公司的SX1280射频芯片，此芯片包含多样的物理层以及多种调制方式，如LoRa、FLRC、GFSK，并可兼容蓝牙协议；特殊的调制和处理方式使得LoRa和FLRC调制的传输距离有显著提升，在原有基础上内置了功率放大器（PA）与低噪声放大器（LNA），使得最大发射功率达到500mW的同时接收灵敏度也获得进一步的提升，在整体的通信稳定性上较没有功率放大器与低噪声放大器的产品大幅度提升；出色的低功耗性能、片上DC-DC和Time-of-flight使得此芯片功功能强大，可用于智能家居、安全系统、定位追踪、无线测距、穿戴设备、智能手环与健康管理等等。
SX1280支持RSSI，用户可以根据需要实现深度的二次开发，亦集成飞行时间(Time of flight)，适用于测距功能。
ELM-2082EWA中文资料
EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:1/5█ Features :█ Applications:● Large emitting dot 0.2" diameter.● Instrument panels● Low power/high brightness.● Digital read out display█ Description :● The ELM-2081 series are alarge emitting area(5.0mmdiameter)LED sources configuredin a 40 dots 5*8 matrix array.● These device is made with whitedots and gray surface.PART NO CHIP C.C. or C.A.Material Emitted ColorELM-2082EWA GaAsP/GaP Orange C.A.OFFICE : NO. 25,Lane 76,Sec.3, Chung Yang Rd., Tucheng 236, Taipei, Taiwan, R.O.C.TEL : 886-2-2267-2000,2267-9936FAX : 886-2-2267-6244,22676189,22676306EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:2/5█ NOTES:1.All dimensions are millimeters ,tolerance is 0.25mm unless otherwise noted.2.Above specification may be changed without notice.Supplier will reserve authority on material change for above specification.EVERLIGHT ELECTRONICS CO.,LTD.Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:3/5█Absolute maximum ratings at Ta = 25℃：Parameter Symbol Rating UnitReverse Voltage Vr5VForward Current If30mAOperating Temperature Topr-40 to +85℃Storage Temperature Tstg-40 to +100℃Soldering Temperature Tsol260 ± 5℃Power Dissipation Pd100mWPeak ForwardCurrent(Duty 1/10 @1KHZ)If(Peak)160mA█Electronic optical characteristics :Parameter Symbol MIN.TYP.MAX.Unit Condition Luminous Intensity Iv 2.8 5.3----mcd If=10mAPeak Wavelengthλp----635----nm If=20mADominant Wavelengthλd----625----nm If=20mASpectrum RediationBandwidth△λ----45----nm If=20mAForward Voltage Vf 1.7 2.0 2.6V If=20mA Reverse Current Ir--------10µA Vr=5VDevice Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO :ELM-2082EWA ECN :Page:4/5█ Reliability test item and condition:NO Item Test ConditionsTestHours/CycleSample Size Ac/Re1Solder Heat TEMP : 260℃ ± 5 ℃ 5 SEC76 PCS0/1H : +85℃ 30min2Temperature Cycle∫ 5 min50 CYCLE76 PCS0/1L : -55℃ 30minH : +100℃ 5min3Thermal Shock∫ 10 sec50 CYCLE76 PCS0/1L : -10℃ 5min4High TemperatureStorageTEMP : 100℃1000 HRS76 PCS0/15Low TemperatureStorageTEMP : -55℃1000 HRS76 PCS0/16DC Operating Life If = 10 mA1000 HRS76 PCS0/17High Temperature / HighHumidity85℃/85% RH1000 HRS76 PCS0/1Device Number :DDM-202-003REV: 1.1 2.3" 5*8 Dot Matrix DisplaysMODEL NO:ELM-2082EWA ECN :Page:5/5。
亿光光耦EL814
09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Electro-Optical Characteristics (Ta=25
unless specified otherwise)
Input
Parameter Forward Voltage Input capacitance Symbol VF Cin Min. Typ. 1.2 50 Max. 1.4 250 Unit V pF Condition IF = ± 20mA V = 0, f = 1KHz
Output
Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Symbol ICEO BVCEO BVECO Min 80 6 Typ. Max. 100 Unit nA V V Condition VCE = 20V, IF = 0mA IC = 0.1mA IE = 0.1mA
Transfer Characteristics
Parameter Current Transfer ratio EL814 CTR EL814A 50 0.7 VCE(sat) RIO fc CIO Tr Tf 5×10 10
Symbol
Min 20
Typ. -
Max. 300
Unit
Condition
Option None M S (TA) S (TB) S1 (TA) S1 (TB) S (TU) S (TD) S1 (TU) S1 (TD) Standard DIP-4
8路光耦光电隔离模块
8路光耦光电隔离模块是一种广泛应用的电子元件，主要用于隔离和传输信号，提高系统的稳定性和可靠性。
这种模块具有8个独立的通道，每个通道都包含一个光耦器件，能够实现光电转换和信号隔离。
在模块中，光耦器件是核心部分，它利用光电效应实现电信号和光信号之间的转换。
当电信号输入时，光耦器件将电信号转换为光信号，通过光导纤维传输到接收端。
在接收端，另一个光耦器件将光信号转换回电信号，完成信号的传输和隔离。
与传统的直接连接方式相比，8路光耦光电隔离模块具有很多优点。
首先，它可以有效地隔离输入和输出信号，避免地线环路和公共阻抗等问题，提高系统的抗干扰能力。
其次，它能够避免高低电平之间的直接耦合，保护电路免受电压冲击和电火花的影响。
此外，它还可以减少电路板空间占用，简化电路设计和安装过程。
在实际应用中，8路光耦光电隔离模块被广泛应用于各种需要隔离和传输信号的场合，如通信、电力、工业控制等领域。
它可以替代传统的继电器、变压器等元件，提高系统的性能和稳定性。
同时，由于其体积小、重量轻、易于集成等特点，它也成为了现代电子设备中不可或缺的一部分。
总之，8路光耦光电隔离模块是一种高效、可靠的电子元件，具有广泛的应用前景。
随着电子技术的不断发展，它将继续发挥重要作用，推动电子设备的小型化、智能化和高效化发展。