亿光光耦EL814
09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Electro-Optical Characteristics (Ta=25
unless specified otherwise)
Input
Parameter Forward Voltage Input capacitance Symbol VF Cin Min. Typ. 1.2 50 Max. 1.4 250 Unit V pF Condition IF = ± 20mA V = 0, f = 1KHz
Output
Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Symbol ICEO BVCEO BVECO Min 80 6 Typ. Max. 100 Unit nA V V Condition VCE = 20V, IF = 0mA IC = 0.1mA IE = 0.1mA
Transfer Characteristics
Parameter Current Transfer ratio EL814 CTR EL814A 50 0.7 VCE(sat) RIO fc CIO Tr Tf 5×10 10
Symbol
Min 20
Typ. -
Max. 300
Unit
Condition
Option None M S (TA) S (TB) S1 (TA) S1 (TB) S (TU) S (TD) S1 (TU) S1 (TD) Standard DIP-4
Description
Packing quantity 100 units per tube 100 units per tube 1000 units per reel 1000 units per reel 1000 units per reel 1000 units per reel 1500 units per reel 1500 units per reel 1500 units per reel 1500 units per reel
亿光一级代理商超毅电子
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUc
Features:
•AC input response • Current transfer ratio (CTR: Min. 20% at IF =±1mA ,VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Wide Operating temperature range -55~110ºC • High collector-emitter voltage VCEO=80V • Compact dual-in-line package • Pb free and RoHS compliant. • UL and cUL approved(No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CQC approved
IF = ±1mA ,VCE = 5V V kHz pF µs VCE=2V, IC=2mA, RL=100 µs IF = ±20mA ,Ic = 1mA VIO = 500Vdc, 40~60%R.H VCE=5V, IC=2 mA, RL=100, -3dB VIO = 0, f = 1MHz
09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
VCC IF Input Pulse
IC
RL Output
Input RIN Output Pulse tr ton
Pin Configuration 1. Anode / Cathode 2. Cathode / Anode 3. Emitter 4. Collector
Description
The EL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in side-lead spacing and SMD option.
1
Symbol IF IFM PD
Rating ±60 1 100 2.9 150
Unit mA A mW mW/ºC mW mW/ºC V V mW V rms °C °C °C
PC 5.8 VCEO VECO PTOT VISO TOPR TSTG 80 6 200 5000 -55 to 110 -55 to 125 260
2010, Everlight All Rights Reserved. Release Date : June 11, 2014. Issue No: DPC-0000043 Rev.6 Release Date:2014-06-26
09:38:06.0
Expired Period: Forever
% 150 1.3 0.05 10
11
IF = ±1mA ,VCE = 5V
CTR Symmetry Collector-emitter saturation voltage Isolation resistance Cut-off frequency Floating capacitance Rise time Fall time * Typical values at Ta = 25°C
Wide lead bend (0.4 inch spacing) Surface mount lead form + TA tape & reel option Surface mount lead form + TB tape & reel option Surface mount lead form (low profile) + TA tape & reel option Surface mount lead form (low profile) + TB tape & reel option Surface mount lead form + TU tape & reel option Surface mount lead form + TD tape & reel option Surface mount lead form (low profile) + TU tape & reel option Surface mount lead form (low profile) + TD tape & reel option
2 Copyright Revision :6 © LifecyclePhase:
Release Date:2014-06-26 2010, Everlight All Rights Reserved. Release Date : June 11, 2014. Issue No: DPC-0000043 Rev.6 Expired Period: Forever
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Absolute Maximum Ratings (Ta=25
)
Parameter Forward current Peak forward current (t = 10µs) Input Power dissipation Derating factor (above 100 ºC) Power dissipation Derating factor (above 100 ºC) Output Collector-Emitter voltage Emitter-Collector voltage Total Power Dissipation Isolation Voltage*
Applications
• AC line monitor • Programmable controllers • Telephone line interface • Unknown polarity DC sensor
1 Copyright Revision :6 © LifecyclePhase:
09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Typical Electro-Optical Characteristics Curves
09:38:06.0
亿光一级代理商超毅电子 DATASHEET
LTV-814seriesRevK光耦参数使用手册
PhotocouplerProduct Data SheetLTV-814824844 (M,S,S-TA,S-TA1,S-TP) SeriesSpec No.:DS-70-96-0013Effective Date:01/05/2019LITE-ON DCCRELEASEBNS-OD-FC001/A4PhotocouplerLTV-8X4series 1.DESCRIPTION1.1FeaturesCurrent transfer ratio(CTR:MIN.20%at I F=±1mA,V CE=5V)High input-output isolation voltage(V iso=5,000Vrms)Response time(tr:TYP.4µs at V CE=2V,I C=2mA,R L=100Ω)Dual-in-line package:LTV-814:1-channel typeLTV-824:2-channel typeLTV-844:4-channel typeWide lead spacing package:LTV-814M:1-channel typeLTV-824M:2-channel typeLTV-844M:4-channel typeSurface mounting package:LTV-814S:1-channel typeLTV-824S:2-channel typeLTV-844S:4-channel typeTape and reel packaging:LTV-814S-TA:1-channel typeLTV-814S-TA1:1-channel typeLTV-814S-TP:1-channel typeLTV-824S-TA1:2-channel typeSafety approvalUL1577VDE DIN EN60747-5-5(VDE0884-5)CSA CA5ANordic Safety(FIMKO/NEMKO/SEMKO/DEMKO)BSI RoHS ComplianceAll materials be used in device are followed EU RoHS directive(No.2002/95/EC,2011/65/EU,and2015/863).ESD pass HBM8000V/MM2000VMSL class11.2ApplicationsHybrid substrates that require high density mounting.Programmable controllersPhotocoupler LTV-8X4series2.PACKAGE DIMENSIONS2.1LTV-8142.2LTV-814M2.3LTV-814SNotes :1.2.3.Year date code.2-digit work week.Factory identification mark shall be marked(W:China-CZ,Y:Thailand)4.5.6.Rank shall be or shall not be marked.“●”for halogen free option.“4”or”V”for VDE option.Dimensions in millimeters (inches).Photocoupler LTV-8X4series2.4LTV-8242.5LTV-824M2.6LTV-824SNotes :1.2.3.Year date code.2-digit work week.Factory identification mark shall be marked (W:China-CZ,Y:Thailand)4.5.Rank shall be or shall not be marked.“●”for halogen free option.6.VDE option shall be.Dimensions in millimeters (inches).PhotocouplerLTV-8X4series 2.7LTV-8442.8LTV-844M2.9LTV-844SNotes:1.2.3.Year date code.2-digit work week.Factory identification mark shall be marked(W:China-CZ,Y:Thailand)4.5.Rank shall be or shall not be marked.“●”for halogen free option.6.VDE option shall be.Dimensions in millimeters(inches).PhotocouplerLTV-8X4series 3.TAPING DIMENSIONS3.1LTV-814S-TA 3.2LTV-814S-TA1Tape wide WP0F16±0.3(0.63)4±0.1(0.15)Pitch of sprocket holes7.5±0.1(0.295)2±0.1(0.079)Distance of compartmentP2Distance of compartment tocompartmentP112±0.1(0.472)3.3Quantities Per ReelQuantities(pcs)1000Photocoupler LTV-8X4series3.4LTV-814S-TPTape wide W P 0F 16±0.3(0.63)4±0.1(0.15)Pitch of sprocket holes 7.5±0.1(0.295)2±0.1(0.079)Distance of compartment P 2Distance of compartment tocompartmentP 18±0.1(0.315)3.5Quantities Per ReelQuantities (pcs)2000Photocoupler LTV-8X4series3.6LTV-824S-TA3.7LTV-824S-TA1Tape wide W P 0F 16±0.3(0.63)4±0.1(0.15)Pitch of sprocket holes 7.5±0.1(0.295)2±0.1(0.079)Distance of compartment P 2Distance of compartment tocompartmentP 112±0.1(0.472)3.8Quantities Per ReelQuantities (pcs)1000Photocoupler LTV-8X4series4.RATING AND CHARACTERISTICS4.1Absolute Maximum Ratings at Ta=25°CI F mA mW V Forward Current ±5070InputPower Dissipation P Collector -Emitter VoltageV CEO V ECO I C 35Emitter -Collector Voltage6V OutputCollector Current 50mA mW mW V rmsCollector Power Dissipation Total Power DissipationP C 150P tot 2001.Isolation VoltageOperating Temperature (LTV-824/844)Operating Temperature (LTV-814)Storage TemperatureV iso T opr T opr T stg T sol5000-30~+100-50~+110-55~+125260o o o oC C C C2Soldering Temperature1.AC For 1Minute,R.H.=40~60%Isolation voltage shall be measured using the following method.(1)Short between anode and cathode on the primary side and between collector and emitter on thesecondary side.(2)The isolation voltage tester with zero-cross circuit shall be used.(3)The waveform of applied voltage shall be a sine wave.2.For 10SecondsPhotocoupler LTV-8X4series4.2ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25°CForward VoltageV F—1.21.4VI F =±20mAInputTerminal Capacitance C t ——3530——250100—pF nA VV=0,f=1KHz V CE =20V,I F =0I C =0.1mA,I F =0Collector Dark Current Collector-EmitterI CEOBV CEOOutputBreakdown Voltage Emitter-Collector BV ECO6——VI E =10µA,I F =0Breakdown Voltage Collector Current I C 0.220——3mA%I F =±1mA,V CE =5V 1.Current Transfer Ratio CTR300Collector-Emitter Saturation Voltage V CE(sat)—0.10.2V I F =±20mA,I C =1mA DC500V,Isolation Resistance Floating CapacitanceCut-off Frequency R iso Cff c5×10101×100.680411—1ΩpFkHz µsTRANSFER 40~60%R.H.CHARACTERISTICS—V=0,f=1MHz V CE =5V,I C =2mA ——1818R L =100Ω,-3dBResponse Time (Rise)Response Time (Fall)tr —V CE =2V,I C =2mAR L =100Ω,tf—3µsI C 1.CTR =×100%IFPhotocoupler LTV-8X4series5.RANK TABLE OF CURRENT TRANSFER RATIO CTRA5010010020150200300300300300A5BLTV-814I F =±1mA V CE =5V A or B or No markNo mark No markTa=25CoLTV-824LTV-8442020Photocoupler LTV-8X4series6.CHARACTERISTICS CURVESFig.2Collector Power Dissipation Fig.1Forword CurrentFig.2Collector Power Dissiptionvs.Ambient Temperaturevs.Ambient Temperatute601601401201008060200150100505050404030201003020100604020-30-20-3002025405060758010010012512025205040756010080125100-60-40-20-60-40120T A -Ambie A n m t T b e ie m n p t e te r m at p u e re rat -u o r C e Ta (C)T A -Ambient Ambien temperaturet Temperatur Ta e-(o C)C Fig.3Collector-emitter SaturationVoltage vs.Forward CurrentFig.4Forward Current vs.ForwardVoltage6Ta=25C20010051251015Forward voltage V F (V)Fig.5Current Transfer Ratio vs.Forward CurrentFig.6Collector Current vs.Collector-emitter Voltage100010002008030252015105T A =25o CV C 1E =850VT A =16025V CE =5VV CE =5V Ta=25I F =30mAT A =25CoTa=25CC70o C 20mA605040302010Pc(MAX.)1401201008010010010mAI =10mA F 1060V CE =0.4VP C MAX.5mAI F =5mA 4020I F =1mA1011251020501234567898246100.10.1111010110000Forward current I (mA)Collector-emitter voltage V (V)F V CE(non-sat)-Non-Saturated Collector E CE mitterVoltage -VI IF F --Fo Forward rward Cur Current rent -mA -mAPhotocoupler LTV-8X4seriesFig.7Relative Current Transfer Ratiovs.Ambient TemperatureFig.8Collector-emitter Saturation Voltagevs.Ambient Temperature0.10100Ambient temperature Ta (C)Fig.9Collector Dark Current vs.Fig.10Response Time vs.Load Resistancevs.Ambient Temperature10-6100V =2V CE 50Ic=2mA 10-7Ta=25Ctr20105tf10-8td 10-921ts10-100.510-110.20.110-12-300204060801000.10.20.512510Ambient Temperature Ta (C)Load resistance R (k )LFig.11Frequency Response Test Circuit for Response TimeInput VccV =2V Ic=2mATa=25Output R L10%90%InputR DOutputCtdts trtfR L =10k 1k 100-10-20Test Circuit for Frequency ResponseVccR LR DOutput0.20.5125101001000Frequency f (kHz)Photocoupler LTV-8X4series7.TEMPERATURE PROFILE OF SOLDERING7.1IR Reflow soldering (JEDEC-STD-020C compliant)Onetimesolderingreflowisrecommendedwithintheconditionoftemperatureandtimeprofileshownbelow.Donotsolder morethanthreetimes.Profile itemConditionsPreheat-Temperature Min (T Smin )150˚C 200˚C -Temperature Max (T Smax -Time (min to max)(ts)Soldering zone)90±30sec-Temperature (T L )-Time (t L )217˚C 60sec Peak Temperature (T P )Ramp-up rate 260˚C 3˚C /sec max.3~6˚C /secRamp-down rate20secRamp-upTP 260CTL 217CTsmax 200CRamp-downTsmin 150C60sec tL (Soldering)25CTime (sec)60~120sec ts (Preheat)35~70secPhotocoupler LTV-8X4series7.2Wave soldering (JEDEC22A111compliant)Onetimesolderingisrecommendedwithintheconditionoftemperature.Temperature:260+0/-5˚C Time:10sec.Preheat temperature:25to140˚C Preheat time:30to80sec.7.3Hand soldering by soldering ironAllowsingleleadsolderingineverysingleprocess.Onetimesolderingisrecommended.Temperature:380+0/-5˚C Time:3sec max.PhotocouplerLTV-8X4series 8.RECOMMENDED FOOT PRINT PATTERNS(MOUNT PAD)8.14PIN8.28PIN8.316PINNote:Dimensions in millimeters.PhotocouplerLTV-8X4series 9.NAMING RULELTV-8X4(1)-(2)-(3)-GDEVICE PART NUMBER(1)No suffix=Dual-in-Line packageM=Wide lead spacing packageS=Surface mounting package(2)TAPING TYPE(TA,TA1,TP or none)(3)CTR RANK(4)Halogen free optionExample:LTV-814S-TA1-A-GLTV8X4(1)(2)(3)-V-GDEVICE PART NUMBER(1)No suffix=Dual-in-Line packageM=Wide lead spacing packageS=Surface mounting package(2)TAPING TYPE(TA,TA1,TP or none)(3)CTR RANK(4)VDE order option(5)Halogen free optionExample:LTV814STA1A-V-G10.NOTESLiteOn is continually improving the quality,reliability,function or design and LiteOn reserves the right to make changes without further notices.The products shown in this publication are designed for the general use in electronic applications such as office automation equipment,communications devices,audio/visual equipment,electrical application and instrumentation.For equipment/devices where high reliability or safety is required,such as space applications,nuclear power control equipment,medical equipment,etc,please contact our sales representatives.When requiring a device for any”specific”application,please contact our sales in advice.If there are any questions about the contents of this publication,please contact us at your convenience.The contents described herein are subject to change without prior notice.Immerge unit’s body in solder paste is not recommended.。
814光耦的应用-概述说明以及解释
814光耦的应用-概述说明以及解释1.引言1.1 概述光耦（Optocoupler）是一种电子器件，它由发光二极管（LED）和光敏二极管（光电晶体管或光电二极管）组成。
光电二极管接收来自LED 发出的光信号，并将其转换为电信号，从而实现光与电的相互隔离与耦合。
通过这种方式，光耦可以在不同电路之间传递信号，同时有效地隔离它们，以防止信号干扰和电气噪声的影响。
光耦的应用范围非常广泛，可以用于电子设备和电路的各个方面。
它常常被用于电源隔离、信号传输、调节和控制等功能。
一方面，光耦可以实现输入与输出之间的电气隔离，从而保护接收电路免受输入电路可能带来的电气噪声、干扰或高电压的损害。
另一方面，光耦可以实现不同电平之间的信号转换，将一个电路的信号转换为另一个电路所需要的电平，以便实现不同功能的电路之间的协调和联动。
光耦在工业控制、通信设备、医疗仪器、电力系统等领域中有着重要的应用。
在工业控制领域，光耦常被用于隔离高电压和低电压电路，以确保工业设备的安全运行。
在通信设备中，光耦被广泛应用于光纤通信系统和光模块等设备中，以实现高速信号的传输和隔离。
在医疗仪器中，光耦可以实现对生物电信号的测量和隔离，确保医疗设备的安全可靠性。
在电力系统中，光耦可以用于电力调节、继电保护和故障检测等功能，确保电力传输过程中的安全和稳定。
未来，随着电子技术的不断发展和创新，光耦的应用前景将进一步扩大。
随着新型材料和制造工艺的引入，光耦的性能和可靠性将得到进一步提高。
同时，高速、高频率和大带宽的需求也将推动光耦技术的发展，使其在数据通信、光电子器件和光学传感等领域发挥更重要的作用。
此外，随着物联网、人工智能和自动驾驶等技术的普及和应用，光耦也将扮演重要角色，为这些领域的设备和系统提供可靠的隔离和传输功能。
综上所述，光耦作为一种重要的电子器件，在电子设备中具有广泛的应用。
它通过光与电的耦合，实现了不同电路之间的信号传输和隔离，保障了电路的稳定工作和可靠性。
el817工作原理
el817工作原理
EL817是一款光电耦合器，也被称为Optocoupler或光耦，常
用于电气隔离和信号传输。
EL817工作原理如下：
1. 光发射器：EL817的光发射器由发光二极管（LED）构成。
当LED接收到输入电流时，它会发出光信号。
2. 光接收器：光接收器由一个光敏三极管（Phototransistor）
组成。
当光信号照射到光敏三极管时，它的发射电流会改变。
3. 输入端和输出端电气隔离：通过内部结构设计，LED和光
敏三极管之间没有直接的电气联系。
这种隔离设计可以有效防止输入和输出之间的电流泄露，从而提高系统的安全性和可靠性。
4. 光电转换：当输入电流通过LED时，它会产生光信号。
这
个光信号以脉冲的形式传播到光敏三极管。
光敏三极管根据光信号的强弱转换为相应的电流，进而输出一个对应的电信号。
5. 信号传输：光敏三极管的电流输出端可以连接到其他电路中，用于传输光电转换后的信号。
通过光耦的工作原理，输入电路和输出电路之间实现了电气隔离，避免了潜在的干扰和噪声。
总结：EL817的工作原理基于光电耦合效应，利用LED发出
的光信号，通过光敏三极管的光电转换，实现输入和输出之间的隔离和信号传输。
这种工作原理使得EL817在电气隔离和
信号传输方面具有广泛的应用价值。
EL817(M)(Y)(TA)-FVG中文资料(everlight)中文数据手册「EasyDatasheet - 矽搜」
V CE(sat) R IO C IO fc tr tf
a
5×10 -
V
I F = 20mA时,IC = 1mA V IO = 500Vdc, 40~60% R.H. V IO = 0, f = 1MHz V CE = 5V, I C = 2mA R L = 100 , -3dB
0.6 80 6 8
a= 25°C除非另有规定）
Min. -
Typ.* 1.2 30
Max. 1.4 10 250
Unit V µA pF
条件
VF
I F = 20mA V R = 4V V = 0, f = 1kHz
IR
C in
输出
参数 集电极 - 发射极暗 当前 集电极 - 发射极 击穿电压 发射极 - 集电极 击穿电压 符号
描述
该EL817系列器件各有一个红外线 发光二极管,光学耦合到封装绿色化合物光电晶体管检 测器. 该器件采用4引脚DIP封装,并提供 宽引线间距和SMD选项. 概要
应用
• • • • •
可编程控制器 系统设备,测量仪器 电信设备 家电,如暖风机等. 不同潜力和阻抗电路之间信号传输
引脚配置 1.阳极 2.阴极 3.发射 4.收集器
W
pF kHz µs µs
V CE = 2V, I C = 2mA, R L = 100
*在T典型值
= 25°C
芯片中文手册,看全文,戳
4引脚 DIP PHOTOTRANSISTOR
光耦合器
典型性能曲线
EL817-G系列
芯片中文手册,看全文,戳
4引脚 DIP PHOTOTRANSISTOR
Min. 80 7
Typ.* -
光耦el817的工作原理
光耦el817的工作原理光耦（Optocoupler）是一种常用的光电器件，也称为光电隔离器或光电耦合器。
其中，EL817是一种常见的光耦型号，被广泛应用于电子设备中。
本文将从工作原理角度解析EL817的原理及其应用。
一、EL817的结构EL817主要由一个发光二极管（LED）和一个光敏三极管（光电晶体管）组成。
其中，LED作为输入端，当输入电流加到LED正极时，LED发出的光线会照射到光敏三极管的基极上，进而激活光敏三极管的发射结。
二、EL817的工作原理EL817的工作原理基于光电效应。
当输入电流加到LED正极时，LED发出的光线会照射到光敏三极管的基极上，光线的能量被吸收后会激活光敏三极管的发射结，形成电流的传导。
这个过程实现了输入信号的光电转换。
具体来说，当LED发出的光线照射到光敏三极管的基极上时，光敏三极管的发射结会受到光线的激发，使得发射结的电流得以流动。
这个电流被称为输出电流，它与输入电流之间存在一定的线性关系。
因此，EL817可以实现输入与输出之间的电隔离与信号转换。
三、EL817的应用由于EL817具有电隔离、信号转换等特点，因此在许多电子设备中得到广泛应用。
1. 电隔离EL817能够实现输入与输出之间的电隔离，从而保护输入与输出之间的电路不受干扰。
例如，在测量仪器中，输入端可能需要测量高压信号，而输出端则需要连接低压电路，这时就可以使用EL817实现输入与输出之间的电隔离，确保安全可靠的信号传输。
2. 信号转换EL817能够将输入信号转换为输出信号，实现不同电平之间的信号匹配。
例如，在数字电路与模拟电路之间，由于电平差异，可能需要使用EL817将数字信号转换为模拟信号，或者将模拟信号转换为数字信号，以实现两者之间的互联互通。
3. 电噪声隔离在一些噪声环境下，输入信号可能会受到电磁干扰或其他干扰源的影响，导致输出信号质量下降。
EL817能够通过电隔离的特性，将输入信号与输出信号隔离开来，从而减少噪声的传递和影响，提高信号的纯净度。
el817光耦工作原理
el817光耦工作原理EL817光耦是一种常见的光电器件，它由发光二极管（LED）和光敏三极管（光控晶体管）组成。
它的工作原理是利用光敏器件对光信号的感应和转换。
在EL817光耦中，LED作为光源，当施加正向电压时，LED会发出光线。
光线经过透明封装后，照射到光敏三极管的基区，使之光电导起来。
光敏三极管的发射极和基极之间的电流变化取决于LED发出的光强度。
EL817光耦的工作原理可以通过以下几个步骤来解释：1. 发光二极管(LED)发出光信号：EL817光耦中的LED是一个二极管，它在正向电压的作用下发出光信号。
LED的电流和光强度之间存在正比关系，当电流增加时，光强度也随之增加。
2. 光线照射到光敏三极管的基区：发出的光线经过透明封装后，照射到光敏三极管的基区。
光敏三极管的基区是一个光敏材料，当光线照射到基区时，光子能量会激发基区的电子，使之跃迁到导带中。
3. 光敏三极管的电流变化：光敏三极管的发射极和基极之间的电流会随着光敏三极管基区的光电导起变化。
当光敏三极管的基区受到光线照射时，基区的电导率增加，从而导致发射极和基极之间的电流增加。
4. 光敏三极管的输出信号：光敏三极管的输出信号可以通过检测发射极和基极之间的电流变化来获取。
这个输出信号可以用来控制其他电路或器件，实现光电隔离、信号传输等功能。
总结来说，EL817光耦的工作原理是通过LED发出光信号，光线照射到光敏三极管的基区，使之光电导起来，进而影响光敏三极管的输出信号。
这种工作原理使得EL817光耦在电气隔离和信号传输方面有广泛的应用。
它可以用于电路的隔离、电压的检测、电流的测量等领域。
EL817光耦的工作原理为我们提供了一种新的光电转换技术，使得光信号和电信号之间可以进行有效的转换和传输。
在实际应用中，我们可以根据需要选择不同的光敏三极管和LED，以满足不同的光电转换要求。
同时，我们还可以根据实际情况设计合适的电路，以实现更加精确和可靠的光电转换效果。
EL814A中文资料
4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Features:• AC input response • Current transfer ratio(CTR: Min. 20% at IF =±1mA ,V CE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • WideOperating temperature range-55~110ºC• High collector-emitter voltage V CEO =80V • Compact dual-in-line package • Pb free and RoHS compliant.• UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved (No. 716108) • NEMKO approved (No. P0*******) • DEMKO approved (No. 313924) • FIMKO approved (No. FI 22807) • CSA approved (No. 1143601)DescriptionTheEL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector.They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. SchematicApplications• AC line monitor• Programmable controllers • Telephone line interface• Unknown polarity DC sensorPin Configuration 1. Anode / Cathode 2. Cathode / Anode 3. Emitter 4. Collector4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Absolute Maximum Ratings (T a =25°C)Parameter Symbol Rating Unit Forward currentI F ±50 mA Peak forward current (t = 10µs) I FM 1 A 70 mW InputPower dissipationDerating factor (above 100 ºC) P D2.9 mW/ºC 150mW Power dissipationDerating factor (above 100 ºC)P C5.8 mW/ºC Collector-Emitter voltage V CEO 80 V OutputEmitter-Collector voltageV ECO 6VTotal power dissipation P tot 200 mW Isolation voltage *1 V iso 5000 V rms Operating temperature T opr -55~+110 °C Storage temperature T stg -55~+125 °C Soldering temperature *2 T sol 260 °CNotes*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together. *2 For 10 seconds.4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Electrical Characteristics (T a =25°C unless specified otherwise)InputParameter Symbol Min. Typ.* Max. Unit ConditionForward voltage V F - 1.2 1.4 V I F = ± 20mA Input capacitanceC in-50250pFV = 0, f = 1KHzOutputParameter Symbol Min. Typ.* Max. Unit ConditionCollector-Emitter darkcurrentI CEO - - 100 nA V CE = 20V, I F = 0mA Collector-Emitter breakdown voltage BV CEO 80 - - VI C = 0.1mAEmitter-Collector breakdown voltage BV ECO6 - - V I E = 0.1mATransfer Characteristics (T a =25°C unless specified otherwise)Parameter Symbol Min. Typ.* Max. Unit ConditionEL81420 - 300Current Transfer ratioEL814ACTR50 - 150 % I F = ±1mA ,V CE = 5VCollector-emitter saturationvoltageV CE(sat) - 0.05 0.2 V I F = ±20mA ,I c = 1mA Isolation resistance R IO 5×10101011 - ΩV IO = 500Vdc, 40~60%R.HCut-off frequency f c - 80 - kHzV CE =5V, I C =2 mA,R L =100Ω, -3dB Floating capacitance C IO - 0.6 1.0 pF V IO = 0, f = 1MHz Rise time T r - 7 18 µs Fall timeT f- 11 18 µsV CE =2V, I C =2mA,R L =100Ω* Typical values at T a = 25°C4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Typical Performance Curves4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 SeriesFigure 9. Switching Time Test Circuit & WaveformsOutput4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLER EL814 SeriesOrder InformationPart NumberEL814X(Y)(Z)NoteX = Lead form option (S, S1, M or none)Y = CTR Rank option (A or none)Z = Tape and reel option (TA, TB, TU, TD or none).quantity Option Description PackingNone Standard DIP-4 100 units per tubeM Wide lead bend (0.4 inch spacing) 100 units per tubeS (TA) Surface mount lead form + TA tape & reel option 1000 units per reelS (TB) Surface mount lead form + TB tape & reel option 1000 units per reelS1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reelS1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reelS (TU) Surface mount lead form + TU tape & reel option 1500 units per reelS (TD) Surface mount lead form + TD tape & reel option 1500 units per reelS1 (TU) Surface mount lead form (low profile) + TU tape & reel option 1500 units per reelS1 (TD) Surface mount lead form (low profile) + TD tape & reel option 1500 units per reel4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Package Drawings(Dimensions in mm)Standard DIP TypeOption M Type4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 SeriesOption S TypeOption S1 Type4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLEREL814 Series Recommended pad layout for surface mount leadformDevice MarkingEL 814 R F YWW EVERLIGHTNotesEL814 denotes Device NumberF denotes Factory Code (C: China, T: Taiwan) R denotes CTR Rank (A or none) Y denotes 1 digit Year code WW denotes 2 digit Week code4 PIN DIP PHOTOTRANSISTOR4 PIN DIP PHOTOTRANSISTOR AC INPUT PHOTOCOUPLEREL814 SeriesTape dimensionsDimension No. A B C D E FDimension(mm) 16.00±0.3 7.5±0.11.75±0.1 8.0±0.12.0±0.1 4.0±0.1 Dimension No. G H I J KDimension(mm) 1.5+0.1/-0 10.4±0.10.4±0.05 4.55±0.1 5.1±0.14 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLER EL814 Series Solder Reflow Temperature ProfileTIME (S)4 PIN DIP PHOTOTRANSISTORAC INPUT PHOTOCOUPLER EL814 SeriesDISCLAIMER1. The specifications in this datasheet may be changed without notice. EVERLIGHT reserves the authorityon material change for above specification.2. When using this product, please observe the absolute maximum ratings and the instructions for use asoutlined in this datasheet. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in this datasheet.3. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction inany form is prohibited without the specific consent of EVERLIGHT.。
亿光光耦EL3043,温度控制专用光耦
6PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER EL303X, EL304X, EL306X, EL308X SeriesFeatures:• Peak breakdown voltage -250V: EL303X -400V: EL304X -600V: EL306X -800V: EL308X• High isolation voltage between input and output (Viso=5000 V rms )•Zero voltage crossing• Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL303X, EL304X, EL306X and EL308X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac.They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 110 to 380 VAC lines,such as solid-state relays, industrial controls, motors, solenoids and consumer appliances.Applications●Solenoid/valve controls ●Light controls●Static power switch ●AC motor drivers ●E.M. contactors●Temperature controls ●AC Motor starters亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL303XV DRM250V EL304X400EL306X600EL308X800Peak Repetitive Surge Current(pw=1ms,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.6mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F-- 1.5V I F=30mA Reverse Leakage current I R--10µA V R=6V OutputParameter SymbolMin.Typ.*Max.Unit ConditionPeak Blocking Current EL303XEL304XI DRM1--100nAV DRM = Rated V DRMI F=0mAEL306XEL308X500Peak On-state Voltage V TM--3V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL303XEL304XEL306X dv/dt1000--V/µsV PEAK=Rated V DRM, I F=0(Fig. 10)EL308X600--Inhibit Voltage (MT1-MT2voltage above which devicewill not trigger)V INH--20V I F= Rated I FTLeakage in lnhibited State I DRM2--500µA I F= Rated I FT,V DRM=Rated V DRM, off stateTransfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3031EL3041EL3061EL3081I FT--15mA Main terminal Voltage=3V EL3032EL3042EL3062EL3082--10EL3033EL3043EL3063EL3083--5Holding Current I H-280-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 600V for EL306X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK0.63 x 600τRCdv/dt = = 378τRC0.632 x V PEAK τRCdv/dt =50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV TA KT1T2Zero Crossing CircuitOrder InformationPart NumberEL303XY(Z)-Vor EL304XY(Z)-Vor EL306XY(Z)-Vor EL308XY(Z)-VNoteX = Part No. (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V=VDE safety approved optionOption Description Packing quantity None Standard DIP-665units per tube M Wide lead bend(0.4 inch spacing)65units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes Everlight3083denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE optionEL3083YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.11.5±0.11.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
el817用法
el817用法EL817是一种光电耦合器，也被称为光耦，是一种将输入电信号转换为光信号，再将光信号转换回电信号的器件。
它由一个发射机和一个接收机组成，通过光传输实现输入和输出的电隔离。
EL817具有广泛的应用领域，包括工控、通信、电力电子、汽车等多个领域。
EL817的基本结构由一颗发光二极管和一颗光探测器组成。
发光二极管通常使用红外LED作为发射源，而光探测器常用的是光敏三极管、光电二极管或光敏晶体管。
发射机和接收机之间通过一个透明的隔离壳相互隔离，使输入和输出之间不会相互影响。
EL817的工作原理基于光的传导。
当输入信号施加在发光二极管上时，发光二极管会产生相应的光信号，光信号经过隔离壳传输到光探测器上。
光探测器接收到光信号后，会产生相应的电信号输出，完成信号的光电转换。
EL817的优点之一是具有电隔离功能。
电隔离是指将高电压电路与低电压电路有效地隔离开，以防止高电压干扰低电压电路，提高整体系统的安全性和稳定性。
EL817通过光信号进行电隔离，使输入和输出之间不存在直接电流或电压连接，从而实现了电隔离的效果。
EL817的另一个优点是具有高速度和快速响应的特点。
它能够在微秒级的时间内完成发射和接收的过程，适用于需要高速信号传输的场合。
并且EL817还具有低功耗、小尺寸、抗干扰等特点，使其成为一种理想的电隔离解决方案。
在工业自动化领域，EL817常用于数字输入输出模块、变频器和PLC等设备中。
它能够将电机驱动回路与PLC控制回路进行电隔离，确保高压电源不会对PLC 控制回路产生干扰，提高设备的稳定性和可靠性。
此外，EL817还可以用于高压开关电源、电液伺服系统、通信设备等。
在电力电子领域，EL817可以用于电力开关设备中的电隔离过程。
在大功率电网中，为了保护低压控制回路和高压电路之间的可靠隔离，常使用EL817光耦来实现电隔离的效果。
光耦能够将高压电路信号转换为光信号，再将光信号转换为低压电路信号，从而避免高压电路对低压电路的干扰。
光耦的应用
功能渠道8-pin DIP8-pin DIP宽体5-pin MFP（SO-5）8-pin SOP（SO-8）高速光耦每秒钟传输1M比特单通道6N1356N136EL4502ELW135ELW136ELM0452ELM0453EL0500EL0501 双通道EL2530EL2531————EL0530EL0531每秒钟传输10M比特单通道6N137EL2601EL2611ELW137ELW2601ELW2611ELM600ELM601ELM611EL0600EL0601EL0611 双通道EL2630EL2631 ————EL0630EL0631EL0661 达林顿输出300K单通道6N1386N139————亿光的高速光耦一般应用在电源上，具体应用在放点等离子，固态继电器，工业测量机，调制器，电话，空调控制板，可编程逻辑控制器等等。
电源工作渠道固态继电器（SSR）Photo TriacEL302X，EL305X，EL304X，EL306X,EL308XELM302X,ELM305X，ELM304X，ELM306X,ELM308X高速光耦应用在空调标准EL817，EL357N-G 空调机应用到的光耦驱动EL3120高速光耦应用在驱动电源标准EL357N-G，EL3H7-G 驱动器应用到的光耦高速6N136，EL0500高速光耦的应用末端设备电话交换系统so8封装晶体管末端设备电机驱动逆变器/伺服系统栅极驱动器末端设备仪表控制/工业网络缝纫机串行总线接口隔离建议的使用设备：8-Pin DIP：6N135,6N136,,EL2503 8-Pin SOP:EL0500,EL0501总线网络描述·总线接口隔离·隔离控制器和分析设备（I/O,，伺服电机，控制板，流出物处理元件）应用·工厂自动化网络（总线接口，总线，CC-LINK）建议的使用设备：5-pin SOP:ELMO452,ELMO4538-pin DIP:EL2502,EL25038-pin SOP:EL0500,EL0501数据传输框图应用：·RS485和RS-422 的隔离接口·I²C的隔离接口建议的使用设备：5-pin SOP:ELM600,ELMO601，ELM06118-pin DIP:EL2601，EL26118-pin SOP:EL0500,EL0501，EL0601,EL0611PLC输入/输出（可编程逻辑控制器）通讯（面板与面板之间）建议的使用设备：5-pin SOP:ELM601,ELM6118-pin SOP:EL0601，EL0611，EL0630，EL0631电机控制描述·电流隔离电机线和控制集成电路·电机驱动控制的高速开关应用·IPM驱动/变频驱动建议的使用设备：5-pin SOP:ELM452，ELM453 8-pin DIP:EL0452，EL0453 8-pin SOP:EL0452,EL0453筑控设备描述：·通信线路之间的隔离室控制器·电机驱动控制的高速开关应用：·数据通信·IPM驱动/变频驱动建议的使用设备：5-pin SOP:ELM452，ELM4538-pin SOP:EL0630，EL0631，EL0611。