BT169B-D-G-1可控硅

30
4
60
2.8
90
2.2
120
1.9
180
1.57
0.4
0.5
α IT(AV) (A)
101
113
125 0.6
a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values.
ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs
over any 20 ms period
Min
[1] [1] [1] -
-
-
-
−40 -
Max
Unit
200
V
400
V
600
V
0.5
A
0.8
A
8 9 0.32 50
1 5 5 2 0.1 +150 125
A A A2s A/µs
mounted; lead length = 4 mm
BT169 series
Thyristors logic level
Min
Typ
Max Unit
-
-
60
K/W
-
150
-
K/W
102 Zth(j-lead)
(K/W)
10
001aab451
1
10−1
10−2 10−5
10−4
10−3
10−2
10−1
A V V W W °C °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID, IR
off-state leakage current
Dynamic characteristics
dVD/dt
critical rate of rise of off-state voltage
s General purpose switching and phase control applications.
1.4 Quick reference data
s VDRM, VRRM ≤ 200 V (BT169B) s VDRM, VRRM ≤ 400 V (BT169D) s VDRM, VRRM ≤ 600 V (BT169G)
Name
Description
BT169B
-
plastic single-ended leaded (through hole) package; 3 leadsBT169DB Nhomakorabea169G
4. Limiting values
Version SOT54
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4 and 5
ITSM
non-repetitive peak on-state current half sine wave;
Tj = 25 °C prior to
surge;
see Figure 2 and 3
1.2 Features
s Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.3 Applications
BT169 series
Thyristors logic level
0.8
Ptot (W)
0.6
1.9 2.2
a= 1.57
001aab446 77
Tc(max) (°C)
89
0.4
0.2
0 0
2.8 4
0.1
0.2
0.3
conduction form angle factor
(degrees) a
VD = 12 V VD = VDRM(max); Tj = 125 °C VD = VDRM(max); VR = VRRM(max); Tj = 125 °C; RGK = 1 kΩ
VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12
0
−50
0
50
100
150
Tlead (°C)
(1) Tlead = 83 °C.
Fig 5. RMS on-state current as a function of lead temperature; maximum values.
9397 750 13512
Product data sheet
Symbol
Parameter
Conditions
VDRM, VRRM
repetitive peak off-state voltages BT169B
BT169D
BT169G
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; see Figure 1
Fig 6. Transient thermal impedance as a function of pulse width.
P
tp δ=
T
tp
t
T
1
10
tp (s)
9397 750 13512
Product data sheet
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13512
Product data sheet
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
5 of 12
Philips Semiconductors
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT
gate trigger current
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 12
Philips Semiconductors
5. Thermal characteristics
Table 4: Symbol Rth(j-lead)
103 ITSM (A)
102
10
BT169 series
Thyristors logic level
001aab497
IT
ITSM
tp
t
Tj initial = 25 °C max
1 10−5
10−4
10−3
tp (s)
10−2
tp ≤ 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values.
RGK = 1 kΩ gate open circuit
ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67 % VDRM(max); Tj = 125 °C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ
9397 750 13512
Product data sheet